Philips BGD904L User's Manual
Contents
1. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT power gain f 50 MHz f 900 MHz slope straight line f 40 to 900 MHz flatness straight line f 40 to 900 MHz input return losses f 40 to 80 MHz f 80 to 160 MHz f 160 to 320 MHz f 320 to 550 MHz f 550 to 650 MHz f 650 to 900 MHz output return losses f 40 to 80 MHz f 80 to 160 MHz f 160 to 320 MHz f 320 to 750 MHz f 750 to 900 MHz phase response f 50 MHz composite triple beat 49 channels flat Vo 47 dBmV fm 859 25 MHz 77 channels flat Vo 44 dBmV fm 547 25 MHz 110 channels flat Vo 44 dBmV fm 745 25 MHz 129 channels flat Vo 44 dBmV fm 859 25 MHz 110 channels fm 397 25 MHz Vo 49 dBmV at 550 MHz note 1 129 channels fm 649 25 MHz Vo 49 5 dBmV at 860 MHz note 2 cross modulation 49 channels flat Vo 47 dBmV fm 55 25 MHz 77 channels flat Vo 44 dBmV fm 55 25 MHz 110 channels flat Vo 44 dBmV fm 55 25 MHz 129 channels flat Vo 44 dBmV fm 55 25 MHz 110 channels fm 397 25 MHz Vo 49 dBmV at 550 MHz note 1 129 channels fm 859 25 MHz Vo 49 5 dBmV at 860 MHz note 2 2001 Nov 01 3 Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L SYMBOL PARAMETER CONDITIONS CSO composite second order 49 channels flat Vo 47 dBmV distortion fm 860 5 MHz 77 channels flat2. DISCRETE SEMICONDUCTORS DATA SHEET BGD904L 860 MHz 20 dB gain power doubler amplifier Product specification 2001 Nov 01 Supersedes data of 1999 Aug 17 Philips PHILIPS Semiconductors DH l LI E Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L FEATURES PINNING SOT115J e Excellent linearity DESCRIPTION e Extremely low noise input e Excellent return loss properties common e Silicon nitride passivation common e Rugged construction V e Gold metallization ensures excellent reliability common e Low DC current consumption common output APPLICATIONS e CATV systems operating in the 40 to 900 MHz frequency range DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V Side view MSA319 Fig 1 Simplified outline QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS Gp power gain f 50 MHz f 900 MHz liot total current consumption DC Vg 24V LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER Ve supply voltage Vi RF input voltage MIN Tsig storage temperature 40 Tmb operating mounting base temperature 20 2001 Nov 01 2 Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L CHARACTERISTICS Bandwidth 40 to 900 MHz Vg 24 V Tmo 35 C Zs ZL 75 2
3. Vo 44 dBmV fm 548 5 MHz 110 channels flat Vo 44 dBmV fm 746 5 MHz 129 channels flat Vo 44 dBmV fm 860 5 MHz 110 channels fm 150 MHz Vo 49 dBmV at 550 MHz note 1 129 channels fm 150 MHz Vo 49 5 dBmV at 860 MHz note 2 second order distortion note 3 output voltage dim 60 dB note 6 dim 60 dB note 7 dim 60 dB note 8 CTB compression 1 dB 129 channels flat f 859 25 MHz CSO compression 1 dB 129 channels flat f 860 5 MHz noise figure f 50 MHz f 550 MHz f 750 MHz f 900 MHz liot total current consumption DC note 9 350 365 380 mA Notes 1 Tilt 9 dB 50 to 550 MHz tilt 3 5 dB at 6 dB offset 550 to 750 MHz 2 Tilt 12 5 dB 50 to 860 MHz 3 fp 55 25 MHz Vp 44 dBmV fy 805 25 MHz Vq 44 dBmV measured at fp fy 860 5 MHz 4 fp 55 25 MHz Vp 44 dBmV fy 691 25 MHz Vq 44 dBmV measured at fp fy 746 5 MHz 5 fp 55 25 MHz Vp 44 dBmV fg 493 25 MHz Vq 44 dBmV measured at fp fy 548 5 MHz 6 Measured according to DIN45004B fp 851 25 MHZ Vp Vo fa 858 25 MHz Vg Vo 6 dB fr 860 25 MHz V Vo 6 dB measured at fp fq f 849 25 MHz 7 Measured according to DIN45004B fp 740 25 MHZ Vp Vo fa 747 25 MHz Va Vo 6 dB fr 749 25 MHz V Vo 6 dB measured at fp fq fr 738 25 MHz 8 Measured according to DIN45004B fp 54
4. is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2001 Nov 01 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes without no
5. 0 25 MHZ Vp Vo fa 547 25 MHz Va Vo 6 dB fr 549 25 MHz V Vo 6 dB measured at fp fy fr 538 25 MHz 9 The module normally operates at Vg 24 V but is able to withstand supply transients up to 35 V 2001 Nov 01 4 Philips Semiconductors 860 MHz 20 dB gain power doubler amplifier MGS452 50 52 CTB Vo dB 1 2 dBmV 60 NIE 48 2 4 3 4 70 44 1 80 40 90 36 0 200 400 600 800 f MHz Zs Zi 75 Q Vg 24 V 110 chs tilt 9 dB 50 to 550 MHz tilt 3 5 dB at 6 dB offset 550 to 750 MHz 1 Vo 3 Typ 2 Typ 3 0 4 Typ 3 o Fig 2 Composite triple beat as a function of frequency under tilted conditions MGS454 50 52 CSO Vo dB dBmV 1 60 48 80 40 90 36 0 200 400 600 800 f MHz Zs Z 75 Q Vg 24 V 110 chs tilt 9 dB 50 to 550 MHz tilt 3 5 dB at 6 dB offset 550 to 750 MHz 1 Vo 3 Typ 2 Typ 3 0 4 Typ 3 o Fig 4 Composite second order distortion as a function of frequency under tilted conditions 2001 Nov 01 Product specification MGS453 50 52 Xmod Vo dB 1 a dBmV 60 4 48 70 44 1 80 40 90 36 0 200 400 600 800 f MHz Zs Zi 75 Q Vg 24 V 110 chs tilt 9 dB 50 to 550 MHz tilt 3
6. 0 dB gain power doubler amplifier MGS458 20 4 40 5 50 Vo BmV 55 Zs Z 75 Q Vg 24 V 129 chs fm 859 25 MHz 1 Typ 3 0 2 Typ 3 Typ 3 o Fig 8 Composite triple beat as a function of output voltage 2001 Nov 01 Product specification BGD904L MGS459 4 40 5 50 Vo dBmV 55 Zs Z 75 Q Vg 24 V 129 chs fm 860 5 MHz 1 Typ 3 o 2 Typ 3 Typ 3 o Fig 9 Composite second order distortion as a function of output voltage Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L PACKAGE OUTLINE Rectangular single ended package aluminium flange 2 vertical mounting holes 2 x 6 32 UNC and 2 extra horizontal mounting holes 7 gold plated in line leads SOT115J DIMENSIONS mm are the original dimensions A Al D d E max max C max max max UNIT mm 20 8 9 1 0 25 27 2 2 54 13 75 2 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT115J ET 99 02 06 2001 Nov 01 8 Phil
7. 5 dB at 6 dB offset 550 to 750 MHz 1 Vo 3 Typ 2 Typ 3 o 4 Typ 3 o Fig 3 Cross modulation as a function of frequency under tilted conditions Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L MGS455 MGS456 50 52 50 I 2 GTS 2 Vo Xmod Vo dB ER dBmV dB BmV 3 i 60 48 60 4 48 4 70 44 70 44 80 40 80 40 90 36 90 36 0 200 400 600 800 1000 0 200 400 600 800 1000 f MHz f MHz Zs Zi 75 Q Vg 24 V 129 chs Zs Zi 75 Q Vg 24 V 129 chs tilt 12 5 dB 50 to 860 MHz tilt 12 5 dB 50 to 860 MHz 1 Vo 3 Typ 1 Vo 3 Typ 2 Typ 3 6 4 Typ 3 6 2 Typ 3 6 4 Typ 3 6 Fig 5 Composite triple beat as a function of Fig 6 Cross modulation as a function of frequency frequency under tilted conditions under tilted conditions MGS457 50 52 CSO Vo dB 1 dBmV 60 48 2 70 44 3 80 ad 40 90 36 0 200 400 600 800 1000 f MHz Zs Z 75 Q Vg 24 V 129 chs tilt 12 5 dB 50 to 860 MHz 1 Vo 3 Typ 2 Typ 3 0 4 Typ 3 o Fig 7 Composite second order distortion as a function of frequency under tilted conditions 2001 Nov 01 6 Philips Semiconductors 860 MHz 2
8. does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 613518 03 pp12 Date of release 2001 Nov 01 Document order number 9397 750 08859 lets make things better i eee amp PHILIPS
9. ips Semiconductors 860 MHz 20 dB gain power doubler amplifier DATA SHEET STATUS PRODUCT STATUS Development DATA SHEET STATUS Objective data Product specification BGD904L DEFINITIONS This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification product This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible Product data Production Notes This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http www semiconductors philips com DEFINITIONS Short form specification The data in a short form specification
10. tice in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L NOTES 2001 Nov 01 10 Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L NOTES 2001 Nov 01 11 Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2001 SCA73 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof
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