CDE ResMap Four Point Probe
Contents
1. sample may be misaligned or wrong recipe selected Solution Re align sample select correct recipe 11 0 Figures And Schematics 11 1 Project and Recipe selection screen Project and Recipe File Project NanoLab Jimmy 11 2 Run Parameter screen CDE Resmap Chapter 8 8 RUN PARAMETER CDE_Demo 6in49pt gt Wafers in Slot Wafer ID POE Reader 160 Cassette B W26 Run Tiles CDE ResMap m wras a wH24 M wH23 Operator Operator P w822 Engineer Engineer D w21 J E w 20 Equipment ResMap T w9 i 18150170 eie File Name TH wi 7 l WHG Directory C 4p_NT CDE_D emo prj 6in49pt rcp 7 wi 5 Keep This Directory i wH M wH SHEET Rs s ooo fim w2 Twit Temperature 23 m wmo M wos Auto Print T N lt fwitos M w07 T w06 m w o5 See Recipe iaa T A w04 Eee 03 at ID M wso2 otlD J wHo Condition Probe 1st WaferlD for manual load WaterlD Cancel Note All entries are for record keeping no effect on measurements 11 3 Sample Recipe screen Engineer Menu CDE Resmap Chapter 8 8 RECIPE Jimmy 4inTest_49pt gt Diameter 100 C Notch Flat Size 33 C Rectangular xSize YSize 12 Conductor SHEET thik For ee 550 fum r Measurement iquration 4 Dual Probe ThOtfset Probe Configuration Probe 1 1 Single Select V Randomize Circular Area Rectangular Area C Diameter Sites 49 XII Il Sites2. the thickness 5 CDE Resmap Chapter 8 8 of the film If we assume that p decreases as a function of thickness buildup typical within the first few hundred A then one can express the thickness A as t oR FILM p B Al 337 17 0 92041 These values have been determined by SemiTech after much characterization
3. Band2 e xur vane a Template File Name MV StraddleNotch Flat MV Follow Flat Edge Excl 6 Data i 14 fo zji Sa Rs x f1 Ret Ohms sq Temperature Compensatons e Menua gt IER o wc SPC Target ReprobeAllReiects a DataReject 6 Sigma Merit lt oo OC T ConditionProbeBeforeReprobe fo LCL jo UCL 10 Motor 4pMtot orm MotionCoord 4phtCrdl orm Probe 4pProbe prm PostProcess 4p_PostP prm Run Title CDE ResMap Manual Load Only Skip NotchiFlat Find Cancel Save Recipe 1 Conductor Thk for BULK field is used for BULK resistance measurement It is not used for SHEET resistance measurement ThOffset field is the angle in degrees that the entire measurement map to be rotated If the Randomize field is selected the map will be rotated by a random amount less than ThOffset 12 0 Appendices 12 1 Measuring the Film Thickness of a Metal Film The thickness of a metal film cannot usually be measured optically like a dielectric film because it is in general not transparent to light The sheet resistance measurement can be used to calculate film thickness If one assumes the film behaves like a bulk material or the electrical and mechanical properties do not change in the film within the thickness range then one can express the thickness as t p Rs where t is the thickness p is the bulk resistivity and R is the sheet resistance Many films however do not behave nicely and p is not uniform within
4. Marvell Nanofabrication Laboratory University of California Berkeley Berkeley Microfabrication Laboratory ay Lab Manual HE Marvell NanoLab Member login Lab Manual Contents MercuryWeb Berkeley Microlab Chapter 8 8 CDE ResMap Four Point Probe cde resmap 380 1 0 Title CDE ResMap Four Point Probe Operation 2 0 Purpose ResMap Four point Probe made by Creative Design Engineering CDE is a semiautomatic tool to measure the sheet resistance of a thin film or the bulk resistance of a wafer sample The wafer sample needs to get manually loaded onto the probe platform Then the measurements are automatically controlled according to the selected recipe that is pre programmed It is capable of accommodating a wafer up to 12 inches in diameter The maximum number of measurement sites available is 99 and the measurement pattern can be circular rectangular linear along the diameter of the wafer or in a customized geometry The measurement range is from 2 mQ o to 5MQ with 0 5 accuracy 3 0 Scope This document covers the procedures of sheet resistance measurement and the explanations of the recipes 4 0 Applicable Documents ResMap Four Point Probe User Manual Hard copy at the tool and soft copy stored in the PC 5 0 Definitions amp Process Terminology 5 1 Four Point Probe A precision tool to measure the sheet resistance in a conductive media The probe has 4 pins in contact with the conductive sam
5. nt Probe comprises of a probe station and a PC Under the cover of the probe station there is a wafer stage with concentric circular grooves for aligning wafers from 2 to 12 inches The maximum measurement diameter is 8 On the out edge of the wafer stage there is a rectangular ceramic for probe pin conditioning Do not touch the ceramic to avoid contamination 9 2 Measurement procedures 9 2 1 Enable the CDE ResMap Four Point Probe cde resmap 9 2 2 Open the cover Load and align your wafer sample on the stage 9 2 3 On the PC screen click Operator drop down menu then select Run Recipe Select the Recipe you plan to use from the appropriate project Section 11 1 Click ok button Or click Previous button to repeat the previous recipe 9 2 4 The PC displays the Run Parameter screen Enter the information on the left side of the screen for record keeping purpose Ignore the Wafer ID field on right side of the screen because the tool does not have a cassette loader 9 2 5 Click the Run button and the tool run the selected recipe When it finishes the PC displays the raw data of all the measurements 9 2 6 once the measurements are completed you can use the graphic utilities to analyzie organize your data 9 2 7 remove your wafer and log out of the machine with the cover closed Trouble Shooting Guidelines 10 1 Problem Pins not touching sample CDE Resmap Chapter 8 8 Cause Measuring site is outside the sample The
6. ple Two pins apply a current and the voltage is measured across the other two pins The sheet resistance can be calculated with the current voltage and the geometry of the sample 5 2 Probe Configuration A Current flows through two outer pins 1 4 and voltage measured across two inner pins 2 3 This configuration has better signal to noise ratio 5 3 Probe Configuration B Current flows through pins 1 3 and voltage measured across pins 2 4 This configuration corrects for pin wobbling and can measure closer to sample edge 6 0 Safety Follow the general safety guidelines in the lab as well as the specific safety rules as per follows 6 1 Electric Shock To prevent electric shock do not change any switch settings and plug connections CDE Resmap Chapter 8 8 7 0 8 0 9 0 10 0 Statistical Process Data N A Available Processes Process Notes 8 1 Available Programs 8 1 1 4 Wafers 49 25 9 5 1 point and 17 point diameter measurements 8 1 2 6 wafers 49 25 9 5 1 point and 25 point diameter measurements 8 2 Process Notes 8 2 1 The probe installed is type A Tip radius 40 um Force 100grams Tip spacing 1 0 mm 8 2 2 To copy the measurement results use Windows Screen Shot Alt PrintScreen First copy the screen display to the clipboard and paste it to WordPad Then you can use USB flash memory drive to transfer the file to your PC Equipment Operation 9 1 Equipment Description The Resmap Four Poi
Download Pdf Manuals
Related Search