0. Table of contents
Contents
1. 451 sccm Argon Ar M T sccm _ SFE ME BEN seem Platen generator 13 56Mhz Zz 21 aumen omv EENEN GEE BD 2m ZENEN Eo oT CET mT 7min Process __ Process status er ee I ee Wafer lock control T User requests Machine actions Sequencer status Fig 1 Full screen with Mimic and Control windows Philips Research MiPlaza TL Company Restricted Operation manual El 1 Document nr EriHeu 20110114 1V1 Page nr 5 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 If the Cluster Operator Station is not visible on the desktop move down to the pop up task bar Fig 2 and click on Cluster Operator Station or its icon left On the task bar NEVER close Data Exchange Pstart E eje c2 Se dll 2bdata Exchange S gt cluster Operator Stati Fig 2 Task bar With the Mimic windows Plan view and Side view the user can trace down the position of waters follow the actions of the robot that transfers wafers between load lock and process chambers The user may also check pressure readings The Control window Wafer lock control allows manual control over the load lock and the window Transfer over the transfer robot The Sequencer is for automated operation Process controle is enabled by the Control windows Process control RIEI and Process control RIE2 for the process chambers called RIE1 primarily chlorine b2. be sure that the location of interest on the wafer is close to the centre of the carrier plate and in this way accessible for the laser beam Philips Research MiPlaza TL Company Restricted Operation manual El 1 MiPlaza oe a lt gt Document nr EriHeu 20110114 1V1 Pagenr 12 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 5 2 5 Press the Run button in the sequencer to run the selected sequence It is this com mand that takes in the place of the Load command when loading the tool via the Wafer lock control window Sequencer Description Opan pme o E Batch Started Complete er an Naming mode Next wafer Expect E se St Status Wafer ID TE ASi m Fig 9 Sequencer window One by one the sequencer will guide wafers through the etch tool and bring them back to the load lock after processing It is an automated command by command sequence Manual intervention is still possible at every moment The button Hold in the Sequencer control window will interrupt a sequence in the sense that a running action transfer or process will be finished before the actual inter ruption is to take place The user is then asked what to do afterwards Stop take over com mand by manual control or Continue sequence proceeds Likewise all control buttons in the Process control window are available for use
3. Data transfer and printing Data can be exported or printed in an indirect way only as the system intentionally is not connected to a network For obvious reasosn the data format has to be different from dat A fresh run or a reopened old one can be saved again via File Save CSV Process run on a clean virus free 1 4MB floppy disk that has to be inserted into the Intellemetrics PC CSV files Comma Separated Values can easily be read and edited by Microsoft Excel on an other PC In this way graphs can also be printed or imported into reports 6 8c Simulation of the etch process Within certain limits the etch process for a stack of thin films can be simulated by the EPD software For all materials including the substrate material the n and k of the complex index of refraction have to be known at the laser wavelength 670nm as well as all thick nesses of the films in the stack Then a software programme calculates the intensity of the reflected laser beam as the stack is etched down The result is a plot of intensity versus etch depth not versus time Consult the machine owner if you like to go into more detail 6 9 Principle of operation The laser EndPoint Detector EPD system is based on measurement of the intensity of light reflected by the substrate A laser beam is focussed to a spot on the substrate and reflected back to a photosensitive detector Both the spot red 670nm and its surroundings green f
4. EE E E A E E E 17 7 1 Substrates and handling cn ccncccsassesantncnsesesovseaadendtscstsasseuastncnepseseuseaasendsscsesocsesaseecescees 17 Ta i MCCAINS and CONG 1 NOTING sorier neei eS 17 Po E aT E a E Serer 18 8 VS CCTs AU US saeco a secret tone con eens gays cee ea sec ot ctusetonsceeten EA 18 Philips Research MiPlaza TL Company Restricted Operation manual Ell Document nr EriHeu 20110114 1V1 Page nr 1 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 1 Changes compared to previous versions Date Page New ver Description number sion num 22 12 2010 O1 English version of Dutch documents RWV 011 040 011 02 2007 and RWV 010 23 99003 01 2003 Philips Research MiPlaza TL Company Restricted Operation manual Ell Document nr EriHeu 20110114 1V1 Page nr 2 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 2 Safety 2 1 General Emergency off breakers On several locations the tool is equipped with ER elow coloured emergency breakers that can be pressed in case of dangerous situations with the tool The tool is separated from the main electrical supply then except for the rough vacuum pumps on the first floor and process gas supply to the tool is blocked Pressing the switches werkschakelaars located near the tool has the same effect but th
5. lt clean 1 gt Imin step 10min step2 in RIE 1 or and lt clean 2 gt at least 10m in RIE 2 Again using the empty carrier plate proceed with a conditioning run for a certain period of time using the recipe you are going to use for etching your substrate Philips Research MiPlaza TL Company Restricted Operation manual El 1 Document nr EriHeu 20110114 1V1 Pagenr 18 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 Note that in general the amount of material exposed to the plasma influences etch rates Etch rates tend to be go down as open surface area increases Therefore it is recom mended to do a calibration run in advance with a dummy wafer identical to the real wa fers Consult the machine owner about the most suitable recipe for your application and the details 7 3 Excluded processes Pure sputter etching e g in an argon plasma is not allowed in the etch tool as it leads to chamber contamination with all negative consequences for you and all other users of the system Ion Beam Etching Veeco system E17 is an excellent alternative way of processing As soon as the to be etched material has opened the underlaying material is exposed to the plasma during the usual overetch period That material may be gold platinum copper or alike materials that are not supposed to be exposed to plasmas especially in case of high bias
6. preparation Process control RIE2 Platen generator 13 56Mhz v Gi OEE GENEA lt 0 ORE On REEE mE Fig 5 Process Control window RIE 2 4 3 3 Press Recipe to enter the Recipe Editor Fig 6 to check or change the process time RIEZ SI ISO SET Recipe ae Tools Help SEERE Boo TEE General Pressure Siets 100m _ _ 1 Descripti Si ets 100mT Pump Down Time mm ss Gas Stabilisation 00 15 mm s 00 10 00 fhh mm ss Fig 6 Recipe Editor RIE 2 4 3 4 In the recipe ignore Gas line Purge and or Standby Step Select the process step and the tab General ignore all other tabs The user is limited to change the process time only and even then with an exception never change the etch times in multiple step recipes designed for interrupted etching They contain sets of alternating etching and cooling steps and the wafer heat balance changes 1f the process times are changed Philips Research MiPlaza TL Company Restricted Operation manual Ell MiPlaza oS a x lt gt n 2 Document nr EriHeu 20110114 1V1 Pagenr 8 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 If endpoint detection is used choose a process time in the recipe that is for sure much longer than the estimated etch time 4 3 5 Save the recipe before closing the editor either by Recipe save and Recipe close or by the usin
7. the process chambers is carried out by a vacuum robot there is virtually no risk at all for exposure to dangerous chemicals or gasses Philips Research MiPlaza TL Company Restricted Operation manual Ell MiPlaza Document nr EriHeu 20110114 1V1 Pagenr 4 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 4 User Manual Part 1 manual control mode 4 1 Mimic and control windows The Cluster Operator Station is displayed on the monitor as a composition of sub windows There are two kinds of windows Mimic windows containing information only and Control windows allowing user interaction with the tool by means of command buttons Cluster Operator Station C036 Philips Administrat Cluster Operator Station C036 Philips Adn Exit Edit Log Mimic Control Window Help Exit Edit Log Mimic Window Help Plan view Sequencer Side view Pomme Transfer Pumpin Shift F4 R RE Wafer lock 4 Wafer lock Shift F11 JS Se eee aan BRIE1 process F5 B RIEL process Shift F5 oe CRIEZ process F C RIE2 process Shift F6 1RIE1 endpoint Shift Control F5 2RIEZ end point Shift Control F6 Cluster Operator Station C036 Philips Administration mode Exit Edit L d Control window He z Zt Ede 109 feme conoi Window He Process control RIEZ Pi Ep Sequencer Gas Flows Nitrogen N2 a50
8. 0 6 2 Select the right camera each process chamber has its own EPD camera Make the same selection on TWO boxes below the monitors the Video Switcher top and the Camera Input bottom 1 EPD camera on chamber RIE 1 2 EPD camera on chamber RIE 3 not in use spare 6 3 On the Intellemetric PC on top of power rack open the small door with the key and a Switch on the field illumination green switch b Switch on the laser beam red switch Please do not touch the gain and offset knobs When a substrate is in the process chamber its image can now be seen on the screen on the wall The field of view on the monitor measures 2 2x1 6mm If necessary adjust focus and intensity big and small adjustment ring on the camera 6 4 Move the laser spot to the location of interest using the X Y micrometer screws The entire camera system can be moved around by 7 to 8mm in all directions around the cen ter position at the edges at the expense of light intensity and spot quality The micrometer reading 10 10 is close to the camera s central position It is important that the laser spot has sufficient access to the film to be etched and has no overlap with the mask material for example resist The laser spot size dictates a clear open area of at least 100 150um diameter 6 5 Adjust the laser beam intensity using the small diafragm ring on the camera The intensity is displayed on the control screen and indicated as Sig
9. Ad Exit Edit Log Mimic Control Window Help Preferences Alt R cluster Sequence Editor Administration mode Operator mode Alt oO Change password Alt P a Access Alt Load from Load recipe Hold station Wafer lock None Unload to Unload recipe Batch Wafer lock None ke Wafer editor Sequence editor Lock recipe editor Alt K 1 RIEL recipe editor Alt F5 2 RIEZ recipe editor Alt F6 Step 1 recipe Edit step 1 Recipe l 2 Clean recipe Interval es Ge Seer Fig 8 Sequence Editor window Philips Research MiPlaza TL Company Restricted Operation manual Ell Document nr EriHeu 20110114 1V1 Page nr 11 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 5 1 2 Press the Edit button to edit the first sequence line A new selection window called Edit step 1 will show up 5 1 3a In the left hand corner select the process chamber by clicking on RIETI or RIE2 5 1 3b In the right hand corner press Select a Step 1 recipe window will appear with a listing of all recipes available in the selected chamber 5 1 4 Select your recipe with a mouse click on the recipe for example kwarts and then press the Select button The Step 1 recipe window disappears and the name of the selected recipe shows up in the Edit step 1 window 5 1 5 Now the option Insert transfers the information from the Edit step
10. Document nr EriHeu 20110114 1V1 Pagenr 0 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 Author Eric van den Heuvel 0 Table of contents 0 MEANING SOT TONO ere carson necota ce iets sian ls ar oe iain la ase E is seine gs aceealec eee 0 l Changes compared to previous Versions sssssssseeerssssssseeteressssssseeerrssssssseerrsssssseeeereo l 2A EE i A icc paca EA ye eae om occa bas tee ae E A EA A E 2 2 1 T eee A E E E mag sneteasecaeexeueinaseaneceaen bia suareentees 2 Zk a E a a E E E E AE E A EEE 2 3 Ee IET TE i A A E T E A E E T 3 4 User Manual Part 1 manual control mode n enneesseeeeenssssssssseerrsssssssseerrsssssssserrrssssss 4 4 1 Mimic and control WING OW GS sesescenencnncdascnsecendvindsiovassnssscacnvensbessaue cemdwnddauendnsedsauneenckessnenss 4 4 2 Wafer unloading loading and transfer cc cecccccccccccceesesseseecceeecesaeeeeeeeeeeeeeseeeeeenes 5 4 3 Select recipe and check change process time cccccssssssseecceeeeeeeeeseseceeeeeeeaeeeeeees 6 Pe RUT IU O SS as aco teats E E 8 gt User Manual Part 2 automated control MOdEe cc eeeeeeeeececeeeeeeeeeeeeeceeeeeeaaeeeeees 10 5 1 SCE UD G8 COU CIC C ereer EE E E E 10 I lt 118 rs E pe ew Toe Te we nee re ee eee Tee 11 6 User Manual Part 3 endpoint detection etch monitor ssseeeesssssssseeeessssssssseeeees 13 7 FORTIS SG O e
11. I to the Cluster Sequence Editor window In principle the sequence list can be as long as you like A new line can be added right above an existing one by clicking that particular line and following the steps 5 2 to 5 4 again An existing line can be removed directly with Delete or replaced by a new one with Change after editing 5 1 6 Save the new sequence via File Save as the system will ask you for a name 8 char acters maximum 5 1 7 Exit the sequence editor via File Exit confirm Exit 5 2 Runa sequence 5 2 1 In the Sequencer control window press the Open button and select your sequence from the pop up list This sequence will then appear in the text box in the upper left hand cor ner of the sequencer control window If you don t have a sequence set up yet go to Section 4 6 to make a new sequence 5 2 2 If you like to check the sequence open the sequence editor by pressing View Alternatively you may press Edit Sequence editor on the main menu bar press File Open and select the right sequence 5 2 3 Set the right process time s in the recipe s invoked by the selected sequence The simplest way is to open the recipe editor by pressing Edit Recipe editor in the main menu bar open the recipe s set and save the recipe s following the steps 4 3 3 4 3 5 described earlier 5 2 4 Puta wafer on the carrier plate in the load lock don t close the lid at this moment If the etch monitor Sect 6 is to be used
12. Run No 1 Reference None Finish eeeecenue Next Endpoint undefined Time s Signal v Signal Level nm 2nd deriv Fig 12 Process window 6 7 Closing down Switch off the field illumination green switch Switch off the laser beam red switch the laser diode has limited lifetime Switch off the LCD monitor 6 8 Options 6 8a Save data A process run can be saved via File Save ProcessRun under a name and folder to be cho sen by the user The file extension automatically is dat then a format readable by the EPD program only Laser End Point JES Window DAO Configuration Help Laser End Point JES Window DAO Configuration Help Save Recent Models Recent Structures Recent Reference Recent Process Exit Structure Modelled data Reference data Process run CS Process Run CS Modelled data Save Recent Models Recent Structures Recent Reference Recent Process Exit v w E ETS Structure New gt New b Load Load Modelled data Reference data Process run Library Such files can be reopened at any time via File Load Process run and displayed on the monitor Philips Research MiPlaza TL Company Restricted Operation manual Ell Document nr EriHeu 20110114 1V1 Pagenr 16 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 6 8b
13. Wafer flat orien tation is not an issue any orientation will do Substrates always have to be supported by the carrier plate the only exception being full sized 200mm wafers Never start a process without a carrier plate in the etch chamber it will attack and damage the platen Substrate height and weight are limited Heavy substrates should always be loaded with their center of gravity close to the hart of the carrier plate prevent tumbling of the carrier plate the central lift mechanisms have small base dimensions The user is responsible for damage free handling of substrates In case of doubt consult the machine owner 7 1 2 Relatively large substrates tend to drift away from their original positions during pumpdown of the loadlock air cushion effect This can be prevented by putting small pieces of silicon few millimeters in size around such substrates in contact with their edges 7 1 3 Optical endpoint detection is successful only when the location of interest on the wafer is positioned at or nearby the hart of the carrier plate If possible substates have to be placed on the carrier plate accordingly 7 2 Cleaning and conditioning Because many different materials are etched in the same chamber with different recipes best and most reproducible results are obtained only after proper cleaning and conditioning of that etch chamber using an empty carrier plate First give the chamber a plasma clean using the recipe s
14. ased gasses and RIE2 primarily fluorine based gasses respectively Finally running processes may be viewed by the Mimic windows RIEI process view and RIE2 process view although this option has little extra value all information is already dis played in the Process control windows albeit in a less graphical way Usually these mimic windows are switched off 4 2 Wafer unloading loading and transfer The etch tool is blind there is no substrate sensing present The system relies on the actions of the user and takes for granted that a substrate has physically been loaded into the load lock after the Load command even if that action has been omitted Take notice of the wafer constraints Sect 7 1 of this manual The user is responsible for damage free handling of substrates Wafer lock control i xj Transfer Process Naming mode Next wafer DUCE Pressure MELTS mT ETT wr Lock status Off OFF Fig 3 Wafer lock control window Fig 4 Transfer control window Philips Research MiPlaza TL Company Restricted Operation manual El 1 Document nr EriHeu 20110114 1V1 Pagenr 6 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 Common practice in stand by status is to leave the Load lock under vacuum with the empty carrier plate inside Consider the empty carrier plate as a dummy substrate 4 2 1 In the Wafer lock control wi
15. at action also includes power down of the electrical wall sockets near the tool Electricity radiation The tool meets international safety regulations such that dangerous situations can virtually be excluded However such situations are present if metal covers have deliberately been re moved or cables disconnected then there is danger for high power electrical shock 220 380V or high power RF radiation 13 56MHz Gasses and vacuum Some process gasses are toxic corrosive or even explosive when present outside the tool but internal tool safety measures are such that this situation can virtually be excluded Explosive combinations of process gasses cannot be used What s more a gas detection system monitors the area around the tool and blocks process gas supply if the slightest concentration of dan gerous gas 1s detected Maintenance by qualified personel only Scheduled preventive maintenance includes cleaning of the process chambers Chambers are opened for cleaning then but not before the chambers have been subjected to a 30 minutes oxygen plasma clean and the installation of an exhaust hood to remove dirty gasses It is ad vised to wear a gas mask with appropriate filters for harmful gasses and small particles 2 2 Chemicals Dangerous process gasses used inside the tool are Chlorine Cl2 boron trichloride BCl hydrogen bromine HBr methane CH4 hydrogen H2 and oxygen Oz Far less dangerous gasses include
16. e run the sequencer will go in hold and wait for a user command 4 4 3 The process will automatically end with the Standby step preparing the process cham ber purge pumpdown for wafer transfer and a next wafer run Philips Research MiPlaza TL Company Restricted Operation manual Ell M Plaza lt a o lt gt x lt Document nr EriHeu 20110114 1V1 Page nr 10 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 5 User Manual Part 2 automated control mode The Sequencer is for automated process runs The sequencer takes over from the user almost all of the manual actions described in the previous sections The user puts all information required by the etch tool into a procedure called Sequence saves the sequence under some name for later use and sets the process times in the recipes that are involved in the that specific sequence The sequence will take care of wafer transfer and selection plus run of the programmed etch recipe s 5 1 Set up a sequence A sequence is nothing more than a list of lines each line representing the etch chamber RIE1 or RIE2 and the etch recipe to be used for wafer processing 5 1 1 To open the Cluster Sequence Editor window press Edit Sequence editor in the main menu bar a blank sequence called not named is shown then Cluster Operator Station C036 Philips
17. g the corresponding icons Always consult the machine owner if you like to make parameter changes in available recipes or if you like to make a new recipe Like you all other users rely on fixed and unchanged recipes 4 4 Run an etch process After loading a wafer Sect 4 2 and selection of the right recipe and adjustment of the proc ess time Sect 4 3 an etch run can be carried out from the Process Control window 4 4 1 Start the selected process by pressing Process Each process run starts with a Standby step in which the process chamber is prepared for processing chamber purge and pumpdown An extra pump purge delay 30s may start if the chamber has not been in use recently After process gas stabilization typically 15s a plasma will be ignited the colour of the chamber mimic will change to purple The Process Control window Fig 7 shows all details about the process parameters set value actual value Process control RIE2 Gas Flows Nitrogen N2 BEEN MEE sccm Oxygen 02 ET BET sccm Argon Ar ao cs sccm CF4 OO I sccm SFe BE ET sccm CHF3 SE EE sccm Platen generator 13 56Mhz s m T REDEK QENE a On DEEN wv omw E o an REN amm 2E JEENA T mT min Process Process status T Process Resume EZEN Se ey fee Fig 7 Process Control window RIE 2 Philips Research MiPlaza TL Company Restricted Operation manual Ell Document nr EriHeu 20110114 1V1 Page nr 9 Doc
18. ield illumination are observed by a camera the view on a monitor is black amp white only Etching an opaque film for example a thick metal film will result in a more or less constant reflected signal until the film becomes very thin Then the reflected intensity will drop or rise depending on the reflectivity of the underlaying material until the film interface is reached Etching a more or less transparant film for example a poly silicon silicon oxide or nitride layer will result in a reflected intensity that oscillates with time Because the original beam reflects back and forth between the top and bottom interface of the transparant film interfer ence between the multiple reflected beams causes the oscillations Constructive interference results in maximum intensity destructive interference in minimum intensity Philips Research MiPlaza TL Company Restricted Operation manual Ell Document nr EriHeu 20110114 1V1 Pagenr 17 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 7 Rules amp Regulations Please take notice of the following remarks about 7 1 substrates handling 7 2 cleaning and conditioning and 7 3 excluded processes 7 1 Substrates and handling 7 1 1 Substrates wafers rectangular plates pieces of any size can be handled as long as the substrates fits within the outline of the 200mm fused quartz carrier plate
19. just in case When the Sequencer is used automated wafer naming produces s numbers This unique wafer number can be useful if later on you are interested in the process details all run data are automatically stored into a data base 5 2 6 At the very end leave the load lock under vacuum after pressing Load in Wafer lock control window 5 2 7 Please don t forget to fill in the log book including the substrate run numbers Philips Research MiPlaza TL Company Restricted Operation manual Ell gt aan za 2 Document nr EriHeu 20110114 1V1 Pagenr 13 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 6 User Manual Part 3 endpoint detection etch monitor Both chambers of the STS etch tool are equiped with an optical endpoint detector A laser beam is pointed at a selected spot on the wafer camera observation and the intensity of the reflected beam is monitored more details can be found in Sect 6 9 The laser spot size dictates a clear open area of at least 100 150um diameter There is NO interaction between the etch tool and the detector there is no automated communication about start process or stop process between them The detector itself is operated in a passive mode the judgement about endpoint and overetch time is up to the user while viewing on screen the evolution of beam intensity If the La
20. nal v SECS Status lsecsRemote state FALSE Its value is limited to the range O 5 0V and it is wise to adjust the camera diafragm small adjustment ring such that the start value is somewhere between 1 0 3 0V if possible 6 6 Open a Process window via File New Process Fig 12 In this mode of operation only three knobs are active Process to start data collection Press this button shortly before plasma ignition during gas flow count down stabilization on the STS tool Signal to re activate automatic plot scaling during data collection Stop to stop data collection Press this button after the etch process has been stopped by the command Skip on the STS tool For each process run you have to open a new process window via File New Process Philips Research MiPlaza TL Company Restricted Operation manual Ell Plaza Document nr EriHeu 20110114 1V1 Page nr 15 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 File Window DAO Configuration Help WES Window DAO Configuration Help New D He e gt Rate Model Trace _ Phase _ Sal gt 1 00 Remote Recent Models gt 0 75 Waiting Recent Structures b gt Induction Recent Reference gt 3 0 50 Main Etch Recent Process gt Exit 0 25 Cutpoint 0 00 Overetch 25 50 Thickness nm 2 D2 A Error Batch Process_run
21. ndow Fig 3 press the Unload command to vent the Load lock Wait for the load lock to come at atmospheric pressure observe the decreasing pressure on the O ring seal through the transparant load lock lid 4 2 2 Gently open the lid it has a stable almost upright open position The substrate mimic on screen will disappear even with the carrier plate still in place 4 2 3 Place your substrate on the carrier plate mind the constraints About wafers don t close the lid at this moment If the etch monitor Sect 6 is to be used be sure that the location of interest on the wafer is close to the centre of the carrier plate and in this way accessible for the laser beam 4 2 4 Press the Load command and after that close the lid substrate mimic will appear on screen Pressure will go down and in the end will automatically be fixed in a window be tween 80 and 160mTorr 4 2 5 In the Transfer window inspect the Source and Destination lines The source line should read Wafer lock the destination line RIE or RIE2 whatever you intend to do Adjust the lines if necessary with a mouse click on the lines By the way Arm is the position on the robot in the transfer chamber a popular position for first wafer inspection through the glass window after etching 4 2 6 If the start and end location are alright press the Transfer button The substrate will go from the wafer lock to its destination After processing it takes simila
22. r actions to get the substrate back into the load lock For the next substrate the procedure starts from step 4 2 1 again Common practice in stand by status is to leave the Load lock under vacuum with the empty carrier plate inside Before closing the lid the last command thus will be Load Automated wafer naming is active when manually loaded via the Wafer lock control window wafers and etch runs will get an m number e g m074 This unique wafer number can be useful if later on you are interested in the process details all run data are automatically stored into a data base Please don t forget to fill in the log book including the substrate run numbers 4 3 Select recipe and check change process time 4 3 1 Press the Select button in the Process Control window of RIE1 or RIE2 Fig 5 If you accidentally press Process a process will start immediately press Abort in the process control window then and the process will stop Philips Research MiPlaza TL Company Restricted Operation manual Ell M Plaza gt _ w1 x lt Document nr EriHeu 20110114 1V1 Page nr 7 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 4 3 2 Select the right recipe from the pop up menu confirm with Select the system will prepare the chamber for processing purge and pump The chamber mimic will be coloured in blue during this
23. recipes no matter what chemistry is used a sputter component will always be present and responsible for material removal This will contaminate the etch chamber In all cases contact the machine owner about options 8 Instruction and test An introduction to the tool is given by the machine owner Normally the instruction will take about one hour First the major parts and possibilities of the machine will be explained After this the operating instructions will be explained following the User Manual as described in Chapt 4 6 Subsequently the potential user will operate the system independently as a test If successful the user is authorized to use the tool and his her name will be added to the users list in the equipment reservation tool If it turns out that some users operate the etch tool with very large time intervals it becomes questionable whether those users still know how to operate the system properly In that case the tool owner may consider to contact those persons and withdraw their authorizations Philips Research MiPlaza TL Company Restricted Operation manual Ell
24. ser End Point window is not present on the left hand monitor start with step 6 1 otherwise skip that step and go to step 6 2 6 1 Intellimetrics EPD program runs on a computer on top of a big electronic power rack The PC s password in administration mode is adm Laser End Point Interferometric File Window Endpoint USEI Change User Cancel DAG Address amp Limits Device no Upper Limit v 1 a 1000 Channel String Lower Limit V 1 3 on Model step size nM i 5 0 Automatic Process Save Off E On pee graph scaling Copyright orgem Limited 1997 1998 World Patents Pending Fig 10 Sign on window l Fig l 1 Default settings On desktop start the EPD program using the EPD icon a Sign on window will appear Fig 10 Press Sign On the EPD control window Laser End Point will appear Maximize that window In the Laser End Point window change two default settings Fig 11 Press DAQ a DAQ configuration window will appear Switch the Type A filter from En abled to Disabled confirm with OK Press Configuration Settings In the Settings window switch Automatic Process Save from On to Off and press Hide Philips Research MiPlaza TL Company Restricted Operation manual El 1 Plaza Document nr EriHeu 20110114 1V1 Pagenr 14 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 201
25. sulfur hexafluoride SF tetrafluormethane freon 14 CF and trifluormethane freon 23 CHF3 However when inside the process chambers and decomposed in a plasma these gasses generate dangerous components Detailed information about these chemicals can be found in the corresponding Material Safety Data Sheets MSDS Philips Research MiPlaza TL Company Restricted Operation manual Ell Document nr EriHeu 20110114 1V1 Pagenr 3 Document Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 3 General information The lt STS RIE Cluster gt tool is a vacuum system for dry Reactive Ion Etching RIE of mate rials in a constant flow of plasma activated process gasses at low pressure typically 10 100mTorr One chamber RIE 1 mainly applies chlorine oxygen or hydrogen based che mistry whereas a second chamber RIE 2 mainly applies fluorine based chemistry Process chamber RIE 1 Process chamber RIE 2 Recipes are available for etching Si Al Cr Mo Ta Ti TiN W ITO polymers resist etc in RIEI Si 102 Si3N4 Mo Ta W polymers resist etc in RIE2 Consult the machine owner about the most suitable recipe for your application Reaction products are removed from the system by vacuum pumps The RIE technique is mainly limited to the etching of those materials that produce volatile reaction products Substrate transfer to and from
26. ument Operation Manual lt STS RIE Cluster gt Epcode Ell Administrator Documents Administrator TFF Date 22 12 2010 4 4 2 If really necessary the process may be interrupted by pressing Hold plasma off and later on continued by pressing Resume plasma on again but that procedure is exceptional and it is not recommendable to do so Hold can be pressed whenever the timer in the right hand corner is counting down for exam ple during the purge or pumpdown of standby steps gas stabilization before plasma ignition or during processing Skip A single process step can be ended by pressing Skip That specific process step will be stopped and the recipe will continue with the next process step or return to Standby step if there is no next step in the recipe This is the most common way to stop processing for ex ample when the etch monitor system shows the user that an endpoint and some overetch time have passed Skip can be pressed whenever the timer in the right hand corner is counting down for exam ple during gas stabilization before plasma ignition or during processing Please don t skip the standby steps before and after processing these steps are there for good reasons and should not be omitted In a multiple step recipe the etch run may be terminated by Abort all steps will then be skipped at once Note that such an abort action is not appreciated by the sequencer 1f the etch run is part of an automated sequenc
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