Method of determining FET source/drain wire, contact, and diffusion
Contents
1. TYLOL IHL ANY SLOVLNOO dO LVYdmd JHL JO HOV 25 S30NVLSIS3y 3 1103443 IHL JO 1 AT3ALLO3dS3M NOIO3H JHL ONY NOIO3 3204005 3HL 30 NI Q3NIVLNOO 512 1 00 S3ONVISIS3H 34193333 JHL 30 HOV3 31435 NI ONINWNS NOIO3M V ANY NOIO33 324005 V JO NOS SONVLSISSY NIVdd 3odnoS 79101 V 32130 ONILAdWOD JHL A9 SNININNSLSG 3ONVLSIS3H NOIS d4Iq 3HL LH9I3M SONVLSISAY NOISNSSIG LOVLNOOD FHL 5 SONVLSISSY LOVINOOD JHL ANY 1 3ONVLSIS33 NOISNSSIG LOVLNOOD JHL Z U JONVLSISSY HIM JHL ONY LH9I3M 3ONVLSIS3S SHIM FHL 40 SLONGOYd FHL LOVINOD YVINOILYVd HOV 303 3143 NI SLOVLNOO dO ALWYN JHL 40 N04 73 SONVLSISSY 3193343 3139 1H9I3M 39NVISIS3S NOISNAsIG LOVLNOO ONININYSLAG 1H9I3M SONVLSISAY V 3139 512 1 02 30 JHL HO Y SONVLSISSY NOISNadid v 99 323151533 LOVLNOD V 0 3ONVLSIS3H HIM V 30 SAONVLSISSY 1V2ISAHd 30IA3Q SNILTOdWOO V A8 Z big US 8 479 131 2 Sheet 8 0112 Jul 2 2013 U S Patent ia 65 ualdvav ualdvav YANNVOS AV 1dSId prs 30V4 H31NI Ja3Sn ____________ 92 224 vel 98 ualdvav ualdvav 002 YEA BLL 914 pL 9014 20 4 XHOML3N y 0 22 8 14 s jqe no x UIEJUOS IM JEU 1x32. 110 includes a source contact width w being defined between the midpoint 304 between a first adjacent contact i e source contact CA 108 and the midpoint 306 between a second adjacent contact i e source contact CA 112 Source contact CA 112 includes a source contact width w being defined between the first edge 300 of the diffusion region RX 106 and the midpoint 306 between an adjacent contact i e source contact 110 Similarly forthe illustrated drain contacts 114 118 drain contact CA 114 includes a drain contact width being defined between the first edge 300 of the diffusion region RX 106 and a midpoint 308 between an adjacent contact i e drain contact CA 116 Drain contact 116 includes a drain contact width w being defined between the midpoint 308 between a first adjacent contact i e drain contact 114 and the midpoint 310 between a second adjacent contact i e drain contact 118 Drain contact CA 118 includes a drain contact width being defined between the second edge 302 ofthe diffusion region RX 106 and the midpoint 310 between an adjacent contact i e drain contact 116 A cumulative width dimension W used for modeling an effective wire resistance parameter is determined by a dimen sion measured from an opposite edge of the diffusion region RX 106 with respectto an edge ofthe diffusion region RX 106 that is intersected by the wire M1 or For example th
3. is determined 606 for each of the plurality of contacts by summing in series for 3s each particular contact the products of the wire resistance weight and the wire resistance r the contact diffusion resistance weight and the contact resistance Re and the contact diffusion resistance weight and the diffusion 40 resistance R A FET total source drain resistance R is determined 608 for the source region or the drain region by summing in series each of the effective resistances for contacts contained in one of the source region and the drain region 45 respectively Finally the effective resistances Rz is output 610 for each of the plurality of contacts and the FET total source drain resistance R for the source region or the drain region A set ofthe plurality of contacts may include source region 50 contacts or drain region contacts The wire resistance weight comprises a square of a ratio of a cumulative width W over the total diffusion region width W py The cumulative width W is defined for each contact of the plurality of contacts by a dimension from the second edge of the diffusion region to a 55 distal edge of a contact region for a particular contact The distal edge of the contact region being defined by a midpoint between two adjacent contacts or the first edge of the diffu sion region The contact diffusion resistance weight comprises a square the physical contact resista
4. AND DIFFUSION RESISTANCES IN THE PRESENCE OF MULTIPLE CONTACTS BACKGROUND The present invention relates to a method of calculating the total source drain resistance for a field effect transistor FET device with multiple contacts in a single source drain region and more specifically it relates to a method of extracting and netlisting multiple diffusion resistance elements multiple contact resistance elements and multiple segments of wire resistance elements for a FET device with multiple contacts in a single source drain region When a source drain region of a FET device or a bi polar device or a metal oxide semiconductor varactor is contacted by multiple contacts there exists a need to calculate or extract total source drain resistance of the FET device In this patent when we say total source resistance it includes diffusion resistances contact resistances and wire resistances at a FET s source side Similarly in this patent when we say total drain resistance it includes diffusion resistance contact resistance and wire resistance at a FET s drain side Using conventional calculation or extraction methods however it is difficult to correctly calculate or correctly extract and netlist the total source drain resistance coming from multiple diffu sion resistance elements multiple contact resistance ele ments and multiple segments of wire resistance elements SUMMARY An exemplary aspect of an embodiment herein include
5. FIG 2 schematically show physical wire contact and diffusion resistive elements in source and drain regions for the FET layout in FIG 1 In the source region there are a physical wire resistance a physical diffusion resistance R and a physical contact CA resistance in the proximity of the contact CA 108 Their contribution to total source resistances may be modeled as an effective resistance Also in the source region there are a physical wire resis tance a physical diffusion resistance gt and a physical contact CA resistance c42 in the proximity ofthe contact CA 110 Their contribution to total source resistances may be modeled as an effective resistance R zg Still in the source region there are a physical wire resis tance r a physical diffusion resistance R and a physical contact CA resistance in the proximity of the contact CA 112 Their contribution to total source resistances may be modeled as an effective resistance In the drain region there are a physical wire resistance rg a physical diffusion resistance R and a physical contact resistance in the proximity of the contact 114 Their contribution to total drain may be modeled as an effective resistance R for the contact 114 In the proximity ofthe contact CA 116 located in the drain region there a physical wire resistance a physical diffus
6. R and the square of a 20 25 30 40 45 50 65 US 8 479 131 2 9 ratio of the contact region width w of contact CA to the overall diffusion region width Way i e 1 1 Wax and 3 a contact resistance component equal to the product of the physical contact resistance and the square of the ratio of the contact region width w of contact CA to the overall diffusion region width Way 1 Each of the source contact 108 112 effective resistances Regio and zg are added in series to determine the overall effective resistance of the multiple contacts in the source region With respect to the drain contacts 114 118 to determine the effective resistance of contact CA the following three components are computed in series 1 a wire resistance component equal to the product of the resistance and the square of a ratio of the cumulative width measurement w of contact to the overall diffusion region width i e r 2 a diffusion resistance component equal to the product of the physical diffusion resistance R and the square ofa ratio of the contact region width wm of contact to the overall diffusion region width Way 1 Ra Wa Way and 3 a contact resistance component equal to the product of the physical contact resistance and the square of the ratio ofthe contact region width of contact CA to the ov
7. is to send the process software directly to a directory on the client computer hard drive When there are proxy servers the pro cess will select the proxy server code determine on which computers to place the proxy servers code transmit the proxy server code then install the proxy server code on the proxy computer The process software will be transmitted to the proxy server then stored on the proxy server As shown in FIG 9 Step 800 begins the deployment ofthe process software The first thing is to determine if there are 0 5 30 40 45 55 60 65 14 any programs that will reside a server or servers when the process software is executed 801 If this is the case then the servers that will contain the executables are identified 909 process software for the server or servers is transferred directly to the servers storage via FTP or someother protocol or by copying though the use of a shared file system 910 The process software is then installed on the servers 911 Next a determination is made on whether the process software is be deployed by having users access the process software on a server or servers 802 If the users are to access the process software on servers then the server addresses that will store the process software are identified 803 A determination is made if a proxy server is to be built 900 to store the process software proxy server is a server that sits between a cli
8. or servers with the correct versions 925 Additionally if there is missing required software then it is updated on the server or servers 925 The server integration is completed by installing the process software 926 Step 927 which follows either step 921 924 or 926 deter mines if there are any programs of the process software that will execute on the clients If no process software programs execute on the clients the integration proceeds to 930 and exits If this not the case then the client addresses are iden tified 928 The clients are checked to see if they contain software that includes the operating system OS applications and net work operating systems NOS together with their version numbers which have been tested with the process software 929 The clients are also checked to determine if there is any missing software that is required by the process software 929 A determination is made as to whether the version numbers match the version numbers of OS applications and NOS that have been tested with the process software 931 If all of the 20 25 30 35 40 45 50 55 60 65 16 versions match and there is no missing required software then the integration proceeds to 930 and exits If one or more of the version numbers do not match then the unmatched versions are updated on the clients with the correct versions 932 In addition if there is missing required software then it is updated on the c
9. said plurality of contacts in said FET device determining a wire resistance weight determining a contact diffusion resistance weight determining an effective resistance for each of said plurality of contacts by summing for each particular contact products of said wire resistance weight and said wire resistance r said contact diffusion resistance weight and said contact resistance Re and US 8 479 131 2 23 said contact diffusion resistance weight and said diffu sion resistance R determining a total resistance R for one of said source region and said drain region by summing in series each of said effective resistances R4 for contacts contained in said source region and said drain region respectively and outputting one of said effective resistances for each of said plurality of contacts and said total resistance for one of said source region and said drain region 13 The non transitory computer storage medium accord ing to claim 12 a set of said plurality of contacts comprising source region contacts 14 The non transitory computer storage medium accord ing to claim 12 a set of said plurality of contacts comprising drain region contacts 15 The non transitory computer storage medium accord ing to claim 12 said wire resistance weight comprising a square of a ratio of a cumulative width w over said total diffusion region width Way 16 The non transitory computer stora
10. source drain resistance is determined for the source region or the drain region by summing in series each of the effective resistances R4 for contacts contained in the source region or the drain region respectively Let the contact number for a source drain region be N let j be the electric current going into or coming out of the n contact n 1 2 The total electric current passing through that segment of M1 wire which connects the n and n 1 con tacts is defined as 1 In gt je k 1 An iteration relationship exists between the effective resis tance to the end of the n wire segment R Eg and the effec tive resistance to the end of the n 1 wire segment Regenesis 2 2 2 Reg nei 2 Ty Ia 1 ntl where r is the wire resistance of the n partition region of a diffusion region and R is the sum of diffusion and contact CA resistance in the n partition of the diffusion region Rag Ras 1 2 NO 3 US 8 479 131 2 5 Using the iteration relation 2 the effective resistance is obtained up to the end of the n wire segment 1 4 Rag z JR Hrs N nel If the metal wire resistance is ignored then the sum of the diffusion and contact resistances R is connected in parallel in the layout If both diffusion and contact resistances are ignored then the metal wire resistance elements r are con nec
11. that was processed anywhere in the network of servers that provide the shared execution of the process software The summed mea surements of use units are periodically multiplied by unit costs and the resulting total process software application ser vice costs are alternatively sent to the customer and or indi cated on a web site accessed by the customer which then remits payment to the service provider In another embodiment the service provider requests pay ment directly from a customer account at a banking or finan cial institution In another embodiment if the service provider is also a customer ofthe customer that uses the process software appli cation the payment owed to the service provider is reconciled to the payment owed by the service provider to minimize the transfer of payments As shown in FIG 11 Step 940 begins the On Demand process transaction is created than contains the unique customer identification the requested service type and any service parameters that further specify the type of service 941 The transaction is then sent to the main server 942 In an On Demand environment the main server can initially be the only server then as capacity is consumed other servers are added to the On Demand environment The server central processing unit CPU capacities in the On Demand environment are queried 943 The CPU require ment ofthe transaction is estimated then the servers available CPU capacity in the On Dema
12. the addresses of theuser client computers 805 The process software is sent via e mail to each of the users client computers The users then receive the e mail 905 and then detach the process software from the e mail to a directory on their client computers 906 The user executes the program that installs the process soft ware on his client computer 912 then exits the process 808 Lastly a determination is made on whether to the process software will be sent directly to user directories on their client computers 806 If so the user directories are identified 807 The process software is transferred directly to the user s client computer directory 907 This can be done in several ways such as but not limited to sharing ofthe file system directories and then copying from the sender s file system to the recipient user s file system or alternatively using a transfer protocol such as File Transfer Protocol FTP The users access the directories on their client file systems in preparation for installing the process software 908 The user executes the program that installs the process software on his client com puter 912 then exits the process 808 The process software which consists of is integrated into a client server and network environment by providing for the process software to coexist with applications operating sys tems and network operating systems software and then installing the process software on the clients and servers in the env
13. up a network access server NAS 978 that allows the remote users to dial a toll free number or attach directly via a cable or DSL modem to access download and install the desktop client software for the remote access VPN 979 After the remote access VPN has been built or if it been previously installed the remote users can then access the process software by dialing into the NAS orattaching directly via a cable or DSL modem into the NAS 965 This allows entry into the corporate network where process software 18 accessed 966 The process software is transported to the remote user s desktop over the network via tunneling That is the process software is divided into packets and each packet including the data and protocol is placed within another US 8 479 131 2 19 packet 967 When the process software arrives at the remote user s desktop it is removed from the packets reconstituted and then is executed on the remote users desktop 968 A determination is made to see if a VPN for site to site access is required 962 111 is not required then proceed to exit the process 963 Otherwise determine if the site to site VPN exists 969 If it does exist then proceed to 972 Otherwise install the dedicated equipment required to establish a site to site VPN 970 Then build the large scale encryption into the VPN 971 After the site to site VPN has been built or if it had been previously established the users access the process software v
14. EE Wong Waisum Shao Fang Huang Andy Ko Tienchi Lee Scott Qian Weihong Liao Chinchang Gao Xiaofang Tazlauana Mihai Liu Weidong Scalable Modeling of MOSFET Source and Drain Resistances for MS RF Circuit Simulation 2006 IEEE BSIM4 5 MOSFET Model User s Manual UC Berkeley Chapter 11 Layout Dependent Parasitics Model 2003 9 pages BSIM4 5 MOSFET Model User s Manual UC Berkeley Appendix A 11 Layout Dependent Parasitics Model 2003 42 pages Lu et al Characterization Simulation and Modeling of FET Source Drain Diffusion Resistance IEEE 2008 Custom Integrated Circuits Conference 2008 pp 281 284 cited by examiner Primary Examiner Vuthe Siek Assistant Examiner Eric Lee 74 Attorney Agent or Firm Gibb amp Riley LLC Richard M Kotulak Esq 57 ABSTRACT A method calculates a total source drain resistance for a field effect transistor FET device The method counts the number N ofcontacts in each source drain region ofthe FET device partitions each source drain region into N contact regions and calculates a set of resistances of elements and connections to the FET device The measured dimensions of widths lengths and distances of layout shapes forming the FET and the connections to the FET are determined and a set of weights based on relative widths of the contact regions are computed The total source drain resistance of the FET device is deter mined by summing p
15. LURALITY OF CONTACTS AND THE TOTAL SOURCE DRAIN RESISTANCE Rg FOR ONE OF THE SOURCE REGION AND THE DRAIN REGION U S Patent 2 2013 Sheet 1 0412 US 8 479 131 2 CN e Fig 1 US 8 479 131 2 Sheet 2 0112 Jul 2 2013 U S Patent 0 3ounos M Py LOS 15 TOM US 8 479 131 2 Sheet 3 0112 Jul 2 2013 U S Patent P By 994105 28 O13 U S Patent Jul 2 2013 Sheet 4 of 12 US 8 479 131 B2 102 302 gt Fig 4 US 8 479 131 2 Sheet 5 of 12 Jul 2 2013 U S Patent 7 x e en 1 yp ay ohh Le yy Pm ey gl vo LA LEMOM Py 89417 Lm PMY Py EZ UI rw oP Ey PY MI Pm WI i 201 3lvo 0pm Sy 801 2 m Sy mi HER 000 WO FEM a vo 00 n KT TE EUN NE SASI 5 Yam mm big US 8 479 131 2 Sheet 6 0112 Jul 2 2013 U S Patent X MM PIU Py VPE XA z a fy etta e E cM _ I 224008410 UIDAP 10 el 4 9 DIJ 0 8 479 131 2 Sheet 7 0112 Jul 2 2013 U S Patent 019 809 909 709 09 009 NOIO3M 3HL ANY NOI938 324005 JHL dO 3NO 404 JONVLSISSY
16. S Jan as 0 US 8 479 131 B2 Se 1 102286 2010228 Jeuolsno Jeuolsno 195 59 6 976 ON iAyoedeo 24 156 966 ON Janes yoedeo samas m juaroyyns juao yyns jJawoysno Jeuolsno 2191 S 0 pues SA 0 pues O 01 r6 86 72 996 peuenb qom ay seijoede 011504 Se uo ejdsiq N 696 296 Tem 18 188 0 UX pues sjueweunseaw D 196 uns gt uo E sjuawaunseaw sl 81220 1 99 3 H6 5 LL O14 was lt 096 0 6 1 0 5592010 9 n29X3 3 ux 5990 9jnoex3 9 6 896 US 8 479 131 2 1 0 592010 J0dSsueJ1 1 0 5592010 y 941909 s nb pue 659028 98 0 915 yomu 9109 55902 JO NdA SI e Bui ouun JE JPWJOS SSe00Jd jlodsueJl Jeas SU 5999 em YOMJOU U oJewjos com 55920010 SSeooV s 5929 JOLU I 569208 JOLU9I i seoq 10 NdA SI 215 0 ajeos ping 8154 alls eu 5900 Ee die as E ZL 6 U S Patent US 8 479 131 2 1 METHOD DETERMINING FET SOURCE DRAIN WIRE CONTACT
17. SjeAJes 909 519 195 5 0 Sse qejnoexe pues ON 016 606 US 8 479 131 2 eDeJojs suala S II01091ID UO 215 559000 195 0 pues Jesn 0 puas 16 uo uoejeq 7 e sual jue AJuep Q Q un aU ewe 3 19091 495 BIA PUSS S9SSeJppe 665191496 J AJ18S Auepl 0 pues N 5592014 59096 sJ sn Axoud IIelsul SelqBlnoexe 206 108 8 JeWJJOS eq o UONUSAUI pues Janes xoJd 009 was e S90 u 2 E 6 614 006 U S Patent US 8 479 131 2 Sheet 10 of 12 Jul 2 2013 U S Patent e eu 3 duuoo 966 ualp 1919409 sua uo 1X3 Q UOISJOA PUB eJenyos jnuap 056 8 UO 556 lepdn ON 966 626 49090 Sjugi uo n lepdn 5 4 SOA sse901d 59001 amp e S sJequinu UOISJOA OG 976 456 ON auemyos ue i LSJSAJ3S s UO UOISJ8A 01 19 9 s ss ppe 2 uo 1 jnu pi WJ Se 5592010 5800 UOISJBA pue ajBMjOs AHuepl 666 1 9 cjusloyns puewaq uo 2
18. a2 United States Patent Dewey III et al US008479131B2 10 Patent No US 8 479 131 B2 45 Date of Patent Jul 2 2013 54 METHOD OF DETERMINING FET SOURCE DRAIN WIRE CONTACT AND DIFFUSION RESISTANCES IN THE PRESENCE OF MULTIPLE CONTACTS 75 Inventors Lewis W Dewey III Wappingers Falls NY US Ning Lu Essex Junction VT US Judith McCullen Essex Junction VT US Cole E Zemke Essex Junction VT US 73 Assignee International Business Machines Corporation Armonk NY US Notice Subject to any disclaimer the term of this patent is extended or adjusted under 35 U S C 154 b by 155 days 21 Appl No 13 038 468 22 Filed Mar 2 2011 65 Prior Publication Data US 2012 0227020 Al Sep 6 2012 51 Int Cl G06F 17 50 2006 01 52 U S USPC 716 110 716 115 58 Field of Classification Search USPE cesi prp tero tr ree tede 716 110 See application file for complete search history 56 References Cited U S PATENT DOCUMENTS 5 461 579 10 1995 Misheloff et al 5 896 300 A 4 1999 Raghavan et al 6 438 729 8 2002 Ho 6 665 845 B1 12 2003 Aingaran et al 6 854 103 B2 2 2005 Teene 7 114 137 B2 9 2006 Hayashi 7 320 116 B2 1 2008 Mukaihira FOREIGN PATENT DOCUMENTS JP 2003 223478 8 2003 JP 2006 260200 9 2006 OTHER PUBLICATIONS Lu Ning Dewey Bill Characterization Simulation and Modeling of FET Source Drain Diffusion Resistance 2008 IE
19. ch contact of said plurality of contacts by a dimension from said sec ond edge of said diffusion region to a distal edge of a contact region for a particular contact and a contact region width w being defined for each contact of said plurality of contacts by one of a dimension between a pair of adjacent midpoints between three adjacent contacts a dimension between a first midpoint between two adja cent contacts and said first edge of said diffusion region and a dimension between a second midpoint between two adjacent contacts and said second edge of said diffu sion region opposite said first edge 3 The computer implemented method according to claim 2 said set of weights further comprising a wire resistance weight comprising a square of a ratio of said cumulative width over said total diffusion region width W gy and a contact diffusion resistance weight comprising a square ofa ratio of said contact region width w over said total diffusion region width Way 4 A computer implemented method of determining a total resistance for a field effect transistor FET device said FET device including a plurality of contacts on a wire M1 having an intersection with a diffusion region RX at a first edge of said diffusion region said diffusion region RX having a total diffusion region width Way being defined as a dimen sion between said first edge and a second edge of said diffu sion region opposite said intersect
20. dable medium s having computer read able program code embodied thereon Any combination of one or more computer readable medi um s may be utilized The computer readable medium may be a computer readable signal medium or a computer read able storage medium computer readable storage medium may be for example but not limited to an electronic mag netic optical electromagnetic infrared or semiconductor system apparatus or device or any suitable combination of the foregoing More specific examples a non exhaustive list ofthe computer readable storage medium would include the following an electrical connection having one or more wires a portable computer diskette a hard disk a random access memory read only memory an erasable programmable read only memory EPROM or Flash memory an optical fiber a portable compact disc read only memory CD ROM an optical storage device a magnetic storage device or any suitable combination ofthe foregoing In the context of this document a computer readable storage medium may be any tangible medium that can contain or store a program foruse by or in connection with an instruction execution system apparatus or device A computer readable signal medium may include a propa gated data signal with computer readable program code embodied therein for example in baseband or as part of a carrier wave Such a propagated signal may take any of a variety of forms includi
21. ded onto a computer other programmable data processing appa ratus or other devices to cause a series of operational steps to be performed on the computer other programmable appara tus or other devices to produce a computer implemented process such that the instructions which execute on the com puter or other programmable apparatus provide processes for implementing the functions acts specified in the flowchart and or block diagram block or blocks Referring now to FIG 8 system 700 illustrates a typical hardware configuration which may be used for implementing the inventive method for calculating a total source drain resis tance of the FET device The configuration has preferably at least one processor or central processing unit CPU 710a 7105 The CPUs 710a 7105 are interconnected via a system bus 712 to a random access memory RAM 714 read only memory ROM 716 input output I O adapter 718 for con necting peripheral devices such as disk units 721 and tape drives 740 to the bus 712 user interface adapter 722 for connecting a keyboard 724 mouse 726 speaker 727 micro phone 732 and or other user interface device to the bus 712 a communication adapter 734 for connecting an information handling system to a data processing network the Internet and Intranet a personal area network PAN etc and a dis play adapter 736 for connecting the bus 712 to a display device 738 and or printer 739 Further an automated reader scan
22. e R4 W Way and 3 a contact resistance component equal to the product of 25 10 FIG 6 summarizes the schematic circuit diagram of FIG 5 by simplifying each of the components of FIG 5 for the effective resistance of the source contacts source and the effective resistance of the drain contacts R being tot drain 5 Ns 1 x a Wn Rss 92 Wx 10 1 Riot drain vr Racan W 1 5 where N is the number of contacts in a source region and is the number of contacts in a drain region FIG 7 illustrates a logic flowchart diagram of a method of an embodiment that includes a computer implemented 20 method for determining a total source drain resistance for a FET The FET has a plurality of contacts on a wire M1 having an intersection with a diffusion region RX at a first edge of the diffusion region The diffusion region RX has a total diffusion region width defined as a dimension between the first edge and a second edge of the diffusion region opposite the intersection at the diffusion region RX first edge The method determines 600 resistances of a wire resistance a contact resistance and a diffusion resistance R for each of the plurality of contacts A wire resistance weight is determined 602 and a contact diffusion resistance weight is determined 604 Next an effective resistance Rzj
23. e source region determines the cumulative width w from dif fusion region edge 302 oppositethe diffusion region edge 300 where wire M1 100 intersects the diffusion region RX 106 Likewise the drain region determines the cumulative width W from diffusion region edge 300 opposite the diffusion region edge 302 where wire M1 104 intersects the diffusion region RX 106 For the source region the cumulative width w for the contact CA 108 closest to the opposite edge 302 of the diffusion region is defined as a distance from the opposite edge 302 of the diffusion region RX 106 to a midpoint 304 of an adjacent contact CA 110 The cumulative width for contact CA is defined as a distance from the opposite edge 302 of the diffusion region RX 106 to a midpoint 306 ofa next adjacent contact 112 Finally the cumulative width w for contact CA is defined as a distance from the opposite edge 302 of the diffusion region RX 106 to the first edge 300 ofthe diffusion region RX 106 Note that the first edge 8 is merely being characterized by the edge where the wire M1 100 intersects the diffusion region RX 106 Note also that cumulative width W is equal to the total width of the diffu sion region Wry For the drain region the cumulative width for the contact 114 closest to the opposite edge 300 as defined by the intersection of wire 1 104 intersection diffusion region RX 106 ofthe diffusion region is defined as a d
24. ent application such as a Web browser and a real server It intercepts all requests to the real server to see if it can fulfill the requests itself If not it forwards the request to the real server The two primary benefits of a proxy server are to improve performance and to filter requests If a proxy server is required then the proxy server is installed 901 The process software is sent to the servers either via a protocol such as FTP or it is copied directly from the source files to the server files via file sharing 902 Another embodiment would be to send a transaction to the servers that contained the process software and have the server process the transaction then receive and copy the process software to the server s file system Once the process software is stored at the servers the users via their client computers then access the process soft ware on the servers and copy to their client computers file systems 903 Another embodiment is to have the servers automatically copy the process software to each client and then run the installation program for the process software at each client computer The user executes the program that installs the process software on his client computer 912 then exits the process 808 In step 804 a determination is made whether the process software is to be deployed by sending the process software to users via e mail The set of users where the process software will be deployed are identified together with
25. ents with its own weight to obtain its effective resistance and v fifthly netlists all effec tive resistance elements in series in spite of a fact that the physical connection among multiple contacts and multiple wire segments are not all connected in series The sum of all effective resistances on the FET source drain side is the total source drain resistance of the FET Optionally the method 5 25 30 40 45 55 65 20 puts a single resistance element for the source node of the FET with its value being total source resistance and also put out another single resistance element for the drain node ofthe FET with its value being total drain resistance The terminology used herein is for the purpose of describ ing particular embodiments only and is not intended to be limiting of the invention As used herein the singular forms and the are intended to include the plural forms as well unless the context clearly indicates otherwise It will be further understood that the terms comprises and or com prising when used in this specification specify the presence of stated features integers steps operations elements and or components but do not preclude the presence or addition of one or more other features integers steps operations elements components and or groups thereof The corresponding structures materials acts and equiva lents ofall means or step plus fu
26. erall diffusion region width Way i e Rca ra IW determine the effective resistance of contact Razg 2 the following three components are computed in series 1 a wire resistance component equal to the product of the resistance and the square of a ratio of the cumulative width measurement of contact CA to the overall diffusion region width Wry i e 2 a diffusion resistance component equal to the product of the physical diffusion resistance gt and the square ofa ratio of the contact region width of contact CA to the overall diffusion region width Way i e RS w gt W and 3 a contact resistance component equal to the product of the physical contact resistance R gt and the square of the ratio ofthe contact region width w of contact to the overall diffusion region width Way 1 was Wax To determine the effective resistance of contact CA3 Razg the following three components are computed in series 1 a wire resistance component equal to the product of the resistance r and the square of a ratio of the cumulative width measurement W of contact CA to the overall diffusion region width Way i e Wa 2 a diffusion resistance component equal to the product of the physical diffusion resistance and the square of a ratio of the contact region width W_ of contact CA to the overall diffusion region width Way i
27. ess server NAS and provides the remote users with desktop client software for their computers The telecommuters can then dial a toll free number or attach directly via a cable or DSL modem to reach the NAS and use their VPN client software to access the corporate network and to access download and execute the process software When using the site to site VPN the process software is deployed accessed and executed through the use of dedicated equipment and large scale encryption that are used to connect a company s multiple fixed sites over a public network such as the Internet The process software is transported over the VPN via tun neling which is the process of placing an entire packet within another packet and sending it over a network The protocol of the outer packet is understood by the network and both points called tunnel interfaces where the packet enters and exits the network As shown in FIG 12 Step 960 begins the Virtual Private Network VPN process A determination is made to see if a VPN for remote access is required 961 If it is not required then proceed to 962 If it is required then determine if the remote access VPN exists 264 If it does exist then proceed to 965 Otherwise identify the third party provider that will provide the secure encrypted connections between the company s private network and the company s remote users 976 The company s remote users are identified 977 The third party provider then sets
28. f the customer has requested that the On Demand costs be posted to a web site 952 then they are posted 953 Ifthe customer has requested that the On Demand costs be sent via e mail to a customer address 954 then they are sent 955 If the customer has requested that the On Demand costs be paid directly from a customer account 956 then payment is received directly from the customer account 957 last step is exit the On Demand process The process software may be deployed accessed and executed through the use of a virtual private network VPN which is any combination of technologies that can be used to secure a connection through an otherwise unsecured or untrusted network The use of VPNs is to improve security and for reduced operational costs The VPN makes use of a public network usually the Internet to connect remote sites or users together Instead of using a dedicated real world connection such as leased line the VPN uses virtual con nections routed through the Internet from the company s private network to the remote site or employee process software may be deployed accessed and executed through either a remote access or a site to site VPN When using the remote access VPNs the process software is deployed accessed and executed via the secure encrypted connections between a company s private network and remote users through a third party service provider The enterprise service provider ESP sets a network acc
29. fect performance additional network bandwidth memory usage storage etc are added to share the workload The measurements of use used for each service and customer are sent to a collecting server that sums the mea surements of use for each customer for each service that was processed anywhere in the network of servers that provide the shared execution of the process software The summed mea surements of use units are periodically multiplied by unit costs and the resulting total process software application ser vice costs are alternatively sent to the customer and or indi cated on a web site accessed by the customer which then remits payment to the service provider In another embodi ment the service provider requests payment directly from a customer account at a banking or financial institution In another embodiment if the service provider is also a cus tomer of the customer that uses the process software applica tion the payment owed to the service provider is reconciled to the payment owed by the service provider to minimize the transfer of payments The process software is shared simultaneously serving multiple customers in a flexible automated fashion It is standardized requiring little customization and it is scalable providing capacity on demand in a pay as you go model The process software can be stored on a shared file system accessible from one or more servers The process software is executed via transactions that conta
30. ffusion region RX at a first edge of the diffusion region The FET has a width W defined as a dimension between a first edge ofthe diffusion region and a second edge of the diffusion region The first edge of the diffusion region is defined as a diffusion edge for electric current flow over it in an M1 wire In FET layout the first edge of the diffusion region typically is that diffusion edge which intersects the wire M1 The second edge of the diffusion region is the other edge which is opposite the first diffusion edge The method further includes determining resistances of a wire resistance lower case a contact resistance and a diffusion resistance upper case R for each of the plurality of contacts For each contact resistance and associated diffusion resistance a weight for its contribution to a total resistance is determined For the resistance of each wire segment connect ing two contacts a weight for its contribution to the total resistance is also determined Weighted resistances arc assigned to each diffusion resistance element each contact resistance element and each wire segment resistance ele ment A total source drain resistance R is determined by summing namely resistive elements being connected in series in a netlist the products of 1 the wire resistance weight and the wire resistance r 2 the contact diffusion resistance weight and the contact resistance R and 3 the contact diffusion re
31. ftware that do not match the list of tested operating systems and version numbers will be upgraded on the clients and servers to the required level After ensuring that the software where the process soft ware is to be deployed is at the correct version level that has been tested to work with the process software the integration is completed by installing the process software on the clients and servers Referring now to FIG 10 Step 920 begins the integration of the process software The first thing is to determine if there are any process software programs that will execute on a server or servers 921 If this is not the case then integration proceeds to 927 If this is the case then the server addresses are identified 922 The servers are checked to see if they contain software that includes the operating system OS applications and network operating systems NOS together with their version numbers which have been tested with the process software 923 The servers are also checked to deter mine if there is any missing software that is required by the process software 923 A determination is made if the version numbers match the version numbers of OS applications and NOS that have been tested with the process software 924 If all of the versions match and there is no missing required software the integra tion continues in 927 If one or more of the version numbers do not match then the unmatched versions are updated on the server
32. ge medium accord ing to claim 15 said cumulative width being defined for each contact of said plurality of contacts by a dimension from 24 said second edge of said diffusion region to a distal edge ofa contact region for a particular contact 17 The non transitory computer storage medium accord ing to claim 16 said distal edge of said contact region being defined by one of a midpoint between two adjacent contacts and said first edge of said diffusion region 18 The non transitory computer storage medium accord ing to claim 12 said contact diffusion resistance weight com prising a square of a ratio of a contact region width w over said total diffusion region width Way 19 The non transitory computer storage medium accord ing to claim 18 said contact region width w being defined for each contact of said plurality of contacts by one of a dimension between a pair of adjacent midpoints between three adjacent contacts a dimension between a first midpoint between two adjacent contacts and said first edge of said diffusion region and a dimension between a second midpoint between two adja cent contacts and said second edge of said diffusion region opposite said first edge
33. ia the VPN 972 The process software is transported to the site users over the network via tunneling That is the process software is divided into packets and each packet including the data and protocol is placed within another packet 974 When the process software arrives at the remote user s desktop it is removed from the packets reconstituted and is executed on the site users desktop 975 Proceed to exit the process 963 The terminology used herein is for the purpose of describ ing particular embodiments only and is not intended to be limiting of the invention As used herein the singular forms and the are intended to include the plural forms as well unless the context clearly indicates otherwise It will be further understood that the terms comprises and or com prising when used in this specification specify the presence of stated features integers steps operations elements and or components but do not preclude the presence or addition of one or more other features integers steps operations elements components and or groups thereof The corresponding structures materials acts and equiva lents ofall means or step plus function elements in the claims below are intended to include any structure material or act for performing the function in combination with other claimed elements as specifically claimed The description of the present invention has been presented for purposes of illustratio
34. ice a set of resistances comprising a wire resistance r a contact resistance Rca and a diffusion resistance R for each of said contacts in said FET device determining by said computing device measured dimen sions of widths lengths and distances of layout shapes forming said FET device and connections to said FET device computing by said computing device a set of weights based on relative widths of said contact regions determining by said computing device said total resis tance of said FET device by summing products of said set of resistances and said set of weights for each of a plurality of contacts in series said summing being per formed for all of said plurality of contacts in one of said source region and said drain region of said FET device and forming by said computing device a netlist based on said total resistance of said FET device 2 The computer implemented method according to claim 1 said measured dimensions of widths lengths and distances of layout shapes forming said FET device and connections to said device further comprising US 8 479 131 2 21 total diffusion region width being defined as a dimension between a first edge of a diffusion region RX and a second edge of said diffusion region opposite said first edge said first edge of said diffusion region intersecting a wire which connects to contacts in said diffusion region a cumulative width w being defined for ea
35. icular contact the products of 1 the wire resistance weight and the wire resistance r 2 the contact diffusion resistance weight and the contact resistance Rej and 3 the contact diffusion resistance weight and the diffusion resistance R The program code is further config ured to determine a total source drain resistance for the source region or the drain region by summing in series each of the effective resistances Rzj for contacts contained in the source region or the drain region respectively and finally output to the effective resistances Rg for each of the con tacts and the total source drain resistance for the source region or the drain region A first embodiment comprises a method of calculating the total resistance of FET parasitic elements such as source drain regions and associated contacts taking into account multiple diffusion resistance elements R multiple contact resistance elements and multiple segments of wire M1 resistance elements r An additional embodiment includes a method of extracting and netlisting multiple diffu sion resistance elements multiple contact resistance ele ments and multiple segments of wire resistance elements in the output of a parasitic resistance extraction tool In the first embodiment multiple diffusion resistance ele ments multiple contact resistance elements and the resis tance elements of multiple wire segments are included Here FET total
36. in data and server pro cessing requests that use CPU units on the accessed server CPU units are units of time such as minutes seconds hours on the central processor of the server Additionally the assessed server may make requests of other servers that require CPU units CPU units are an example that represents but one measurement of use Other measurements of use include but are not limited to network bandwidth memory usage storage usage packet transfers complete transactions etc When multiple customers use the same process software application their transactions are differentiated by the param US 8 479 131 2 17 eters included the transactions that identify the unique customer and the type of service for that customer All of the CPU units and other measurements ofuse that are used for the services for each customer are recorded When the number of transactions to any one server reaches a number that begins to affect the performance of that server other servers are accessed to increase the capacity and to share the workload Likewise when other measurements of use such as network bandwidth memory usage storage usage etc approach a capacity so as to affect performance additional network bandwidth memory usage storage etc are added to share the workload The measurements of use used for each service and cus tomer are sent to a collecting server that sums the measure ments of use for each customer for each service
37. ion at said diffusion region RX first edge said method comprising counting by a computing device a number N of contacts in each source region and drain region of said FET device partitioning by said computing device each source region and drain region into a plurality of contact regions a number of contact regions being equal to said number of contacts determining by said computing device resistances of a wire resistance a contact resistance and diffusion resistance R for each of said plurality of contacts in said FET device determining by said computing device a wire resistance weight determining by said computing device a contact diffusion resistance weight determining by said computing device an effective resis tance for each of said plurality of contacts by summing for each particular contact products of said wire resistance weight and said wire resistance r said contact diffusion resistance weight and said contact resistance and said contact diffusion resistance weight and said diffu sion resistance R determining by said computing device a total resistance for one of said source region and said drain region by summing in series each of said effective resistances Rgp for contacts contained in one of said source region and said drain region respectively and outputting from said computing device one of said effec tive resistances Rz for each of said plu
38. ion resistance gt and a physical contact resis tance Their contribution to total drain resistances may be modeled as an effective resistance Inthe proximity ofthe contact CA 118 located in the drain region there a physical wire resistance a physical diffusion resistance and a physical contact resis US 8 479 131 2 7 tance Rgc43 Their contribution to total drain resistances may be modeled as an effective resistance FIG 3 is a prior art netlist on wire contact and diffusion resistive elements in source and drain regions for the FET layout in FIG 1 FIG 4 is a schematic diagram that measures dimension parameters of the diffusion region RX 106 the dimension parameters of the wires 1 100 and 104 and position parameters of each of the contacts CA 108 118 in each source or drain region A total overall width W of the diffusion region RX 106 is measured from a first edge 300 where a wire for example M1 100 intersects the diffusion region RX 106 to a second edge 302 of the diffusion region RX 106 opposite the first edge 300 Each of the contacts CA defines a contact region having a contact region width w For example source contact CA 108 includes a source contact width w being defined between the second edge 302 of the diffusion region RX 106 and a midpoint 304 between an adjacent contact i e source contact 110 Source contact
39. ironment where the process software will function The first step 15 to identify any software on the clients and servers including the network operating system where the process software will be deployed that are required by the US 8 479 131 2 15 process software or that work in conjunction with the process software This includes the network operating system that is software that enhances a basic operating system by adding networking features Next the software applications and version numbers will be identified and compared to the list of software applications and version numbers that have been tested to work with the process software Those software applications that are miss ing or that do not match the correct version will be upgraded with the correct version numbers Program instructions that pass parameters from the process software to the software applications will be checked to ensure the parameter lists matches the parameter lists required by the process software Conversely parameters passed by the software applications to the process software will be checked to ensure the parameters match the parameters required by the process software The client and server operating systems including the network operating systems will be identified and compared to the list of operating systems version numbers and network software that have been tested to work with the process software Those operating systems version numbers and network so
40. istance from the opposite edge 300 ofthe diffusion region RX 106 to a midpoint 308 of an adjacent contact CA 116 The cumu lative width W for contact CA is defined as a distance from the opposite edge 300 of the diffusion region RX 106 to a midpoint 310 ofa next adjacent contact CA 118 Finally the cumulative width W for contact CA is defined as a distance from the opposite edge 300 of the diffusion region RX 106 to the edge 302 of the diffusion region RX 106 Note also that cumulative width is equal to the total width of the diffu sion region W FIG 5 illustrates a schematic circuit diagram used to deter mine the effective resistance of the multiple contacts in each ofthe source and drain regions corresponding to FIGS 1 2 and 4 For example on the source side region on the M1 wire 100 contact CA 112 has three components that are com puted in series to determine the effective resistance of contact Rags 1 a wire resistance component equal to the product of the resistance and the square of a ratio of the cumulative width measurement W of contact CA to the overall diffusion region width W gy i e r W 4 W Rd 2 a diffusion resistance component equal to the product of the physical diffusion resistance R and the square of a ratio of the contact region width w of contact CA to the overall diffusion region width Way 1 R 3 w 3 Wa and 3 a contact resistance component equal to the
41. ith multiple contacts in a source drain region This portion of the disclosure 1 pre sents a method to extract and netlist multiple diffusion resis tance elements multiple contact resistance elements and multiple segments of wire resistance elements using a para sitic extraction tool ii a method of extracting and calculat ing total FET source drain resistance and iii a method of generating a much simplified netlist These methods also apply to a diffusion region of a MOS varactor Another embodiment of the present invention calculates a total source drain resistance of a FET device This embodi ment calculates a set of physical resistances of the FET and determines measured dimensions of widths lengths and dis tances of layout shapes forming the FET and connections to the FET This embodiment computes a set of weights based on the relative sizes of the measured dimensions and deter mines the total source drain resistance of the FET device by summing the products of the set of physical resistances and the set of weights for each ofthe contacts in series and does so for all ofthe plurality ofcontacts in the source region or the drain region From this the embodiment forms a netlist based on the determined total source drain resistance of the FET device Another embodiment of the present invention deter mines a FET source drain resistance for a FET that has a plurality of contacts on a wire M1 having an intersection with a di
42. lients 932 The client integration is completed by installing the process software on the clients 933 The integration proceeds to 930 and exits The process software can be stored on a shared file system accessible from one or more servers The process software is executed via transactions that contain data and server pro cessing requests that use CPU units on the accessed server CPU units are units of time such as minutes seconds hours on the central processor of the server Additionally the assessed server may make requests of other servers that require CPU units CPU units are an example that represents but one measurement of use Other measurements of use include but are not limited to network bandwidth memory usage storage usage packet transfers complete transactions etc When multiple customers use the same process software application their transactions are differentiated by the param eters included in the transactions that identify the unique customer and the type of service for that customer All of the CPU units and other measurements of use that are used for the services for each customer are recorded When the number of transactions to any one server reaches a number that begins to affect the performance of that server other servers are accessed to increase the capacity and to share the workload Likewise when other measurements of use such as network bandwidth memory usage storage usage etc approach a capacity so as to af
43. mputer to perform a method that determines a total source drain resis tance for a field effect transistor FET The FET includes a plurality of contacts on a wire M1 having an intersection with a diffusion region RX at a first edge of the diffusion region The diffusion region RX has a total diffusion region width Wax defined as a dimension between the first edge and a second edge of the diffusion region opposite the inter section at the diffusion region RX first edge The method counts the number N ofcontacts in each source drain region ofthe FET device partitions each source drain region into N contact region and determining resistances of a wire resis tance a contact resistance R anda diffusion resistance R for each of the plurality of contacts to the FET A wire resistance weight and a contact diffusion resistance weight are determined An effective resistance Ry for each of the plurality of contacts is determined by summing in series for each particular contact the products of the wire resistance weight and the wire resistance r the contact diffusion resis tance weight and the contact resistance and the con tact diffusion resistance weight and the diffusion resistance A total source drain resistance R for one of a source region and a drain region is determined by summing in series each of the effective resistances for contacts contained in one of the source region and the drain region re
44. n Internet Service Provider Aspects of the present invention are described below with reference to flowchart illustrations and or block diagrams of methods apparatus systems and computer program prod ucts according to embodiments of the invention It will be 0 5 35 40 45 50 55 60 65 12 understood that each block ofthe flowchart illustrations and or block diagrams and combinations of blocks in the flow chart illustrations and or block diagrams can be imple mented by computer program instructions These computer program instructions may be provided to a processor of a general purpose computer special purpose computer or other programmable data processing apparatus to produce a machine such that the instructions which execute via the processor of the computer or other programmable data pro cessing apparatus create means for implementing the func tions acts specified in the flowchart and or block diagram block or blocks These computer program instructions may also be stored in acomputer readable medium that can direct a computer other programmable data processing apparatus or other devices to function in a particular manner such that the instructions stored in the computer readable medium produce an article of manufacture including instructions which implement the function act specified in the flowchart and or block diagram block or blocks The computer program instructions may also be loa
45. n and description but is not intended to be exhaus tive or limited to the invention in the form disclosed Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention The embodiment was chosen and described in order to best explain the principles of the inven tion and the practical application and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated The method as described above is used in the fabrication of integrated circuit chips In summary the embodiments presented herein include a computer implemented method for extracting netlisting and calculating source drain resistance of a FET device that 1 firstly counts the number of contacts in each source drain region ofthe FET device and divides each source drain region into multiple contact regions 11 secondly extracts and calculates a set of source drain diffusion resistances ele ments a set of contact resistance elements and a set of wire segment resistance elements iii thirdly computes a weight for each of diffusion resistance elements contact resistance elements and wire segment resistance elements using the widths of contact regions iv fourthly multiplies each of diffusion resistance elements contact resistance elements and wire segment resistance elem
46. nce and the square of 60 ofa ratio of a contact region width w over the total diffu the ratio of the contact region width w 44 of contact CA to the overall diffusion region width W py 1 R casa Waal Wax Each of the drain contact 114 116 effective resistances Razga and Raggs are added in series to determine overall effective resistance of the multiple contacts in the drain region sion region width Way The contact region width w is defined for each contact of the plurality of contacts by a pair of midpoints between three adjacent contacts a first midpoint between two adjacent contacts and the first edge of the diffu 65 sionregion or a second midpoint between two adjacent con tacts and the second edge of the diffusion region opposite the first edge US 8 479 131 2 11 As will be appreciated by one skilled in the art aspects of the present invention may be embodied as a system method or computer program product Accordingly aspects of the present invention may take the form of an entirely hardware embodiment an entirely software embodiment including firmware resident software micro code etc or an embodi ment combining software and hardware aspects that may all generally be referred to herein as a circuit module or system Furthermore aspects of the present invention may take the form ofa computer program product embodied in one or more computer rea
47. nction elements in the claims below are intended to include any structure material or act for performing the function in combination with other claimed elements as specifically claimed The description of the present invention has been presented for purposes of illustration and description but is not intended to be exhaus tive or limited to the invention in the form disclosed Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention The embodiment was chosen and described in order to best explain the principles of the inven tion and the practical application and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated What is claimed is 1 A computer implemented method of calculating total resistance of a field effect transistor FET device said method comprising counting by a computing device a number N of contacts in each source region and drain region of said FET device partitioning by said computing device each said source region and each said drain region into a plurality of contact regions a number of contact regions in each said source region and each said drain region being equal to said number of contacts in each said source region and each said drain region respectively calculating by said computing dev
48. nd environment are compared to the transaction CPU requirement to see if there is sufficient CPU available capacity in any server to process the transac tion 944 If there is not sufficient server CPU available capac ity then additional server CPU capacity is allocated to pro cess the transaction 948 If there was already sufficient Available CPU capacity then the transaction is sent to a selected server 945 Before executing the transaction a check is made of the remaining On Demand environment to determine if the envi ronment has sufficient available capacity for processing the transaction This environment capacity consists of such things as but not limited to network bandwidth processor memory storage etc 946 If there is not sufficient available capacity then capacity will be added to the On Demand environment 947 Next the required software to process the transaction is accessed loaded into memory then the trans action is executed 949 The usage measurements are recorded 950 The usage measurement consists ofthe portions ofthose functions in the On Demand environment that is used to process the transac tion The usage of such functions as but not limited to net work bandwidth processor memory storage and CPU cycles are what is recorded The usage measurements are summed multiplied by unit costs and then recorded as a charge to the 20 25 30 35 40 45 50 55 60 65 18 requesting customer 951 I
49. ner 741 may be included Such readers scanners are com mercially available from many sources In addition to the system described above a different aspect of the invention includes a computer implemented method for performing the above method As an example this method may be implemented in the particular environment discussed above Such a method may be implemented for example by oper ating a computer as embodied by a digital data processing apparatus to execute a sequence of machine readable instructions These instructions may reside in various types of signal bearing media Thus this aspect of the present invention is directed to a programmed product including signal bearing media tangi bly embodying a program of machine readable instructions executable by a digital data processor to perform the above method Such a method may be implemented for example by oper ating the CPU 710 to execute a sequence of machine readable instructions These instructions may reside in various types of signal bearing media US 8 479 131 2 13 Thus this aspect of present invention is directed to programmed product comprising signal bearing media tan gibly embodying a program of machine readable instructions executable by a digital data processor incorporating the CPU 710 and hardware above to perform the method ofthe inven tion The flowchart and block diagrams in the Figures illustrate the architecture functionality and o
50. ng but not limited to electro mag netic optical or any suitable combination thereof A com puter readable signal medium may be any computer readable medium that is not a computer readable storage medium and that can communicate propagate or transport a program for use by or in connection with an instruction execution system apparatus or device Program code embodied on a computer readable medium may be transmitted using any appropriate medium including but not limited to wireless wireline optical fiber cable RF etc or any suitable combination of the foregoing Computer program code for carrying out operations for aspects of the present invention may be written in any com bination of one or more programming languages including an object oriented programming language such as Java Smalltalk or the like and conventional procedural pro gramming languages such as the C programming language or similar programming languages The program code may execute entirely on the user s computer partly on the user s computer as a stand alone software package partly on the user s computer and partly on a remote computer or entirely on the remote computer or server In the latter scenario the remote computer may be connected to the user s computer through any type of network including a local area network LAN ora wide area network WAN or the connection may be made to an external computer for example through the Internet using a
51. odel and c a wireresistance model instead of passing its true length L the distance from the center of the n contact to the center of the n 1 contact a modified length L W W may be passed to a wire resistance model Optionally a post processor can combine 3N resistance elements N diffusion Resistance elements N contact resis tance elements and N metal wire resistance elements into a Single total resistance element for each of the source and drain regions Another application of the method in this disclosure is in schematic FET models where all diffusion resistance contact resistance and M1 wire resistance in the FET s source end can be combined into a single source side resistor element and all diffusion resistance contact resistance and M1 wire resistance in the FET s drain end can be combined into a single drain side resistor element FIG 1 shows atypical FET layout with multiple contacts in its source region and multiple contacts in its drain region In FIG 1 a polysilicon PC gate 102 intersecting diffusion region RX 106 defines a FET One side of diffusion region RX 106 outside PC gate 102 defines a source region and the other side of diffusion region RX 106 outside PC gate 102 defines a drain region A wire M1 100 connects multiple contacts CA CA 108 CA 110 CA 112 located in the source region A second wire MI 104 connects multiple contacts CA 114 116 and CA 118 in the drain region
52. on between a pair of adjacent midpoints between three adjacent contacts a dimension between a first midpoint between two adjacent contacts and said first edge of said diffusion region and a dimension between a second midpoint between two adja cent contacts and said second edge of said diffusion region opposite said first edge 12 A non transitory computer storage medium storing computer readable instruction executable by a computer to perform a method that determines a total resistance for a field effect transistor FET device said FET device including a plurality of contacts on a wire M1 having an intersection with a diffusion region RX at a first edge of said diffusion region said diffusion region RX having a total diffusion region width W gy defined as a dimension between said first edge and a second edge of said diffusion region opposite said intersection at said diffusion region RX first edge said method comprising counting a number N of contacts in each source region and drain region of said FET device partitioning each said source region and each said drain region into a plurality of contact regions a number of contact regions in each said source region and each said drain region being equal to said number of contacts in each said source region and each said drain region respectively determining resistances of a wire resistance r a contact resistance R lt and a diffusion resistance R for each of
53. peration of possible implementations of systems methods and computer program products according to various embodiments of the present invention In this regard each block in the flowchart or block diagrams may represent a module segment or portion of code which comprises one or more executable instructions for implementing the specified logical function s It should also be noted that in some alternative implementations the functions noted in the block may occur out ofthe order noted in the figures For example two blocks shown in succession may in fact be executed substantially concurrently or the blocks may sometimes be executed in the reverse order depending upon the functionality involved It will also be noted that each block of the block diagrams and or flowchart illustration and combinations ofblocks in the block diagrams and or flowchart illustration can be implemented by special purpose hardware based systems that perform the specified functions or acts or combinations of special purpose hard ware and computer instructions Deployment Types include loading directly in the client server and proxy computers via loading a storage medium such as a CD DVD etc The process software may also be automatically or semi automatically deployed into a com puter system by sending the process software to a central server or a group of central servers The process software is then downloaded into the client computers that will execute
54. product of the physical contact resistance and the square of the ratio of the contact region width w of contact CA to the overall diffusion region width i e Ws3 Wr To determine the effective resistance of contact 2 the following three components are computed in series 1 a wire resistance component equal to the product of the resistance r and the square ofa ratio ofthe cumulative width measurement W of contact CA to the overall diffusion region width W gy i e r W 4 W 22 2 a diffusion resistance component equal to the product of the physical diffusion resistance R and the square of a ratio of the contact region width w of contact CA to the overall diffusion region width Way 1 R W gt Way and 3 a contact resistance component equal to the product of the physical contact resistance and the square of the ratio of the contact region width w of contact CA to the overall diffusion region width Ways 1 determine the effective resistance of contact R z 1 the following three components are computed in series 1 a wire resistance component equal to the product of the resistance r and the square of a ratio of the cumulative width measurement W of contact CA to the overall diffusion region width W py i e 67 2 adiffusion resistance component equal to the product of the physical diffusion resistance
55. rality of con 20 25 30 35 40 45 55 60 22 tacts and said total resistance R for one of said source region and said drain region 5 The computer implemented method according to claim 4 aset of said plurality of contacts comprising source region contacts 6 The computer implemented method according to claim 4 a set of said plurality of contacts comprising drain region contacts 7 The computer implemented method according to claim 4 said wire resistance weight comprising a square ofa ratio of a cumulative width W over said total diffusion region width Wax 8 The computer implemented method according to claim 7 said cumulative width W being defined for each contact of said plurality of contacts by a dimension from said second edge of said diffusion region to a distal edge of a contact region for a particular contact 9 The computer implemented method according to claim 8 said distal edge of said contact region being defined by one of a midpoint between two adjacent contacts and said first edge of said diffusion region 10 The computer implemented method according to claim 4 said contact diffusion resistance weight comprising a square of ratio of a contact region width w over said total diffusion region width Wy 11 The computer implemented method according to claim 10 said contact region width w being defined for each contact of said plurality of contacts by one of a dimensi
56. roducts of the set of resistances and the set of weights for each of a plurality of contacts in series the summing being performed for all of the plurality of contacts in one of a source region and a drain region of the FET A netlist is formed based on the total source resistance and total drain resistance of the FET device 19 Claims 12 Drawing Sheets eee E AE ARATI EPUM Ve DETERMINING A COMPUTING DEVICE PHYSICAL RESISTANCES OF A WIRE 600 RESISTANCE r A CONTACT RESISTANCE Rea AND DIFFUSION RESISTANCE R FOR EACH OF THE PLURALITY OF CONTACTS DETERMINING A WIRE RESISTANCE WEIGHT ar DETERMINING CONTACT DIFFUSION RESISTANCE WEIGHT 604 PRODUCTS RESISTANCE Rea AND RESISTANCE 8 1 THE WIRE RESISTANCE WEIGHT AND THE WIRE RESISTANCE A 2 THE CONTACT DIFFUSION RESISTANCE WEIGHT AND THE CONTACT 3 THE CONTACT DIFFUSION RESISTANCE WEIGHT AND THE DIFFUSION DETERMINING AN EFFECTIVE RESISTANCE FOR EACH OF THE PLURALITY Teo OF CONTACTS BY SUMMING IN SERIES FOR EACH PARTICULAR CONTACT THE I REGION RESPECTIVELY DETERMINING BY THE COMPUTING DEVICE TOTAL SOURCE DRAIN 608 RESISTANCE FOR ONE OF A SOURCE REGION AND DRAIN REGION BY SUMMING IN SERIES EACH OF THE EFFECTIVE RESISTANCES Rz FOR CONTACTS CONTAINED IN ONE OF THE SOURCE REGION AND THE DRAIN I OUTPUTTING ONE OF THE EFFECTIVE RESISTANCES Rej FOR EACH OF THE P
57. s a computer implemented method that calculates a total source drain resistance of a field effect transistor FET device The method counts the number N of contacts in each source drain region of the FET device partitions each source drain region into N contact regions and calculates a set of resis tances of elements and connections to the FET device The measured dimensions of widths lengths and distances of layout shapes forming the FET and the connections to the FET are determined and a set of weights based on relative widths ofthe contact regions are computed The total source drain resistance of the FET device is determined by summing products of the set of resistances and the set of weights for each of a plurality of contacts in series the summing being performed for all ofthe plurality of contacts in one ofa source region and a drain region ofthe FET A netlistis formed based on the total source resistance and total drain resistance of the FET device Another exemplary aspect of an embodiment herein includes a computer implemented method that determines a total source drain resistance for a field effect transistor FET The FET includes a plurality of contacts on a wire M1 having an intersection with a diffusion region RX at a first edge ofthe diffusion region The diffusion region RX has a total diffusion region width W gy being defined as a dimen sion between the first edge and a second edge of the diffusion region oppo
58. sistance weight and the diffusion resis tance R Another embodiment of the present invention includes a computer program product for determining a FET source drain resistance for a FET that has a plurality of contacts between a diffusion region RX and a wire M1 The FET has a width W py defined as a dimension between a first edge of the diffusion region and a second edge of the diffusion region The first edge of the diffusion region is defined as a diffusion edge which intersects the wire The second edge of the diffusion region is the other edge which is opposite the 0 5 20 35 40 45 55 60 65 4 first diffusion edge method further includes determining resistances of a wire resistance lower case a contact resis tance and a diffusion resistance upper case R for each of the plurality of contacts The computer program product includes a non transitory computer readable storage medium having computer readable program code embodied therewith the computer readable program code causes a computer to determine resistances of a wire resistance r a contact resis tance and a diffusion resistance R for each of the plurality of contacts and to determine a wire resistance weight and a contact diffusion resistance weight The pro gram code is further configured to determine an effective resistance Rg for each of the plurality of contacts by sum ming in series for each part
59. site the intersection at the diffusion region RX first edge The method counts the number N of contacts in each source drain region of the FET device partitions each source drain region into N contact regions and determines resistances of a wire resistance a contact resistance R and a diffusion resistance R for each of the plurality of contacts to the FET wire resistance weight and a contact diffusion resistance weight are determined effective resistance for each of the plurality of contacts is deter 0 30 40 45 50 60 2 mined summing in series each particular contact the products of the wire resistance weight and the wire resistance r the contact diffusion resistance weight and the contact resistance R lt and the contact diffusion resistance weight and the diffusion resistance R total source drain resis tance R for one of a source region and a drain region is determined by summing in series each of the effective resis tances for contacts contained in one ofthe source region and the drain region respectively One of the effective resis tances is output for each of the plurality of contacts and the total source drain resistance R for one of the source region and the drain region A further exemplary aspect of an embodiment herein includes a non transitory computer storage medium storing computer readable instruction executable by a co
60. spectively One of the effective resistances Rz is output for each ofthe plurality of contacts and the total source drain resistance for one of the source region and the drain region BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS FIG 1 is a typical FET layout with multiple contacts in its source region and multiple contacts in its drain region FIG 2 schematically shows physical wire contact and diffusion resistive elements in source and drain regions for the FET layout in FIG 1 FIG 3 is a conventional netlist on wire contact and diffu sionresistive elements in source and drain regions forthe FET layout in FIG 1 FIG 4 is a schematic diagram of an embodiment herein FIG 5 is a netlist diagram of an embodiment herein FIG 6 is an alternative netlist diagram of an embodiment herein FIG 7 is a logic flowchart diagram of a method of an embodiment herein FIG 8 is a schematic diagram of a computer system for execution of a transitory computer program thereupon FIG 9 is a schematic diagram of a deployment system according to embodiments herein FIG 10 is a schematic diagram of an integration system according to embodiments herein US 8 479 131 2 3 FIG 11 is a schematic diagram of on demand system according to embodiments herein and FIG 12 is a schematic diagram of a virtual private network system according to embodiments herein DETAILED DESCRIPTION One embodiment includes a FET w
61. stance parameter A model module function returns contact resis tance with an instance parameter to indicate the number of contacts connected in parallel and a model module function to calculate wire resistance with one of the instance param eters being the wire length For each contact of multiple contacts in a single source drain region the corresponding netlist includes 1 wire resis tance element 1 diffusion resistance element and 1 contact resistance element or 1 wire resistance element and 1 com bined diffusion contact resistance element Instead of a parallel connection or a more complex con nection when M1 wire resistance is included one embodi ment connects the resistance elements for all wire segments all contacts and all source drain partitions in series and uses weights for those component elements 10 20 25 gt 35 40 45 50 55 60 65 6 embodiments herein extract and pass more geometric parameters to parasitic resistance models or to other func tions inside an extraction tool with respect to a a contact resistance that passes either a ratio w W py to a contact resistance model or change the via number connected in parallel from a true value of 1 to an equivalent value of W w a real value in general b a diffusion resistance that passes either a multiplier w W or the FET total width parameter Wg to a diffusion resistance m
62. ted in series in the layout When all three types of resis tance diffusion contact and wire resistances are included then their connection is a combination of having both parallel connection and serial connection Nevertheless in a netlist or in an extraction deck they may be connected in series and are also associated with weights The n weight for diffusion and contact resistance is j I but the n weight for the metal say MI wire resistance is I 1 22 For the metal wire resistance the numbering of 1 vs 2 vs 3 is not arbitrary The 1 gt segment of wire carries the smallest current and the last segment carries all current passing through the FET When all partition widths w are much smaller than a characteristic width value wo which depends on FET maxi mum effective current and Vdd etc the current is propor tional to the width w of the n partition region jn 2596 wa lt lt wo n 1 2 N 5 Total resistance 4 simplifies to 1 lt 6 X n l where n 7 S wo n 1 2 vus s IN is the total width from the beginning of the 1 partition region to the end of the n partition region and Wax Wy 8 is the FET width One embodiment presented herein includes a model mod ule function to calculate estimate the diffusion resistance single diffusion region s partition with the capability to mul the resistance by another real value 1 an in
63. the process software The process software is sent directly to the client system via e mail The process software is then either detached to a directory or loaded into a directory by a button on the e mail that executes a program that detaches the process software into a directory Send the process software directly to a directory on the client computer hard drive When there are proxy servers the process will select the proxy server code determine on which computers to place the proxy servers code transmit the proxy server code then install the proxy server code on the proxy computer The process software will be transmitted to the proxy server then stored on the proxy server While it is understood that the process software may be deployed by manually loading directly in the client server and proxy computers via loading a storage medium such as a CD DVD etc the process software may also be automati cally or semi automatically deployed into a computer system by sending the process software to a central server or a group of central servers The process software is then downloaded into the client computers that will execute the process soft ware Alternatively the process software is sent directly to the client system via e mail The process software is then either detached to a directory or loaded into a directory by a button on the e mail that executes a program that detaches the pro cess software into a directory Another alternative
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