External Flash Definition Editor （EFE） User`s Manual
Contents
1. m memory fill command Command format MF start end data lt mode gt start start address Can t be omitted end end address Can t be omitted data fill data Can t be omitted mode BYTE WORD LONG if omitted BYTE is assumed Follow the rules below when writing 1 Only use a single white space or a single tab to separate parameters 2 Start address must not be higher than the end address Note Only part of the options of the memory fill command usable in the command line window of HEW are supported If other options than those given above are specified device operation cannot be guaranteed R20UT1966EJ0101 Rev 1 01 Page 34 of 37 Mar 01 2012 RENESAS External Flash Definition Editor EFE User s Manual Dec 12 2009 Rev 1 00 Publication Date Mar3 2012 Rev 1 01 Published by Renesas Electronics Corporation Edited by Renesas Solutions Corp 44 NE SAS SALES OFFICES Renesas Electronics Corporation http www renesas com Refer to http www renesas com for the latest and detailed information Renesas Hectronics America Inc 2880 Scott Boulevard Santa Clara CA 95050 2554 U SA Tel 1 408 588 6000 Fax 1 408 588 6130 Renesas Hectronics Canada Limited 1101 Nicholson Road Newmarket Ontario L3Y 9C3 Canada Tel 1 905 898 5441 Fax 1 905 898 3220 Renesas Hectronics Europe Limited Dukes Meadow Millboard Road Bourne End Buckinghamshire SL8 5FH U K Tel 442. 1628 585 100 Fax 44 1628 585 900 Renesas Hectronics Europe GmbH Arcadiastrasse 10 40472 D sseldorf Germany Tel 49 211 65030 Fax 49 211 6503 1327 Renesas Hectronics China Co Ltd 7th Hoor Quantum Plaza No 27 ZhiChunLu Haidian District Beijing 100083 PRChina Tel 86 10 8235 1155 Fax 86 10 8235 7679 Renesas Hectronics Shanghai Co Ltd Unit 204 205 AZIA Center No 1233 Lujiazui Ring Fd Pudong District Shanghai 200120 China Tel 86 21 5877 1818 Fax 86 21 6887 7858 7898 Renesas Hectronics Hong Kong Limited Unit 1601 1613 16 F Tower 2 Grand Century Place 193 Prince Edward Road West Mongkok Kowloon Hong Kong Tel 852 2886 9318 Fax 852 2886 9022 9044 Renesas Hectronics Taiwan Co Ltd 7 No 363 Fu Shing North Road Taipei Taiwan Tel 886 2 81 75 9600 Fax 886 2 8175 9670 Renesas Hectronics Singapore Pte Ltd 1 harbourFront Avenue 06 10 keppel Bay Tower Singapore 098632 Tel 65 6213 0200 Fax 65 6278 8001 Renesas Hectronics Malaysia Sdn Bhd Unit 906 Block B Menara Amcorp Amcorp Trade Centre No 18 Jn Persiaran Barat 46050 Petaling Jaya Selangor Darul Ensan Malaysia Tel 60 3 7955 9390 Fax 60 3 7955 9510 Renesas Hectronics Korea Co Ltd 11F Samik Lavied or Bldg 720 2 Yeoksam Dong Kangnam Ku Seoul 135 080 Korea Tel 82 2 558 3737 Fax 82 2 558 5141 O 2012 Renesas Electronics Corporation and Renesas Solutions Corp All rights reserved Colophon 1
3. 2 End ARI EET 28 3 3 3 Memory Obelisco 29 3 3 4 Mapping Information Window coocnccnoncnonononononnnononnnnncnnnononononn cone n nn nnne ne enne nre ennt enne teen entren nre trenetenn nete 30 3 3 5 Pre Download Execution S ript mese O 30 3 3 6 Post Download Execution Sc Plica rene ebat ree ttes ee conse boe Lp ve bn IO E UAE PE ERE toc EDO d duas dar 30 IN OUS ENTRE 31 3 4 1 Base Address HM 31 3 4 2 Nj e M r 31 3 4 3 External RAM uni ia p ES 31 3 4 4 Width Of ACC CSS iii ana a abatir dpto 31 3 4 5 External RAM Pre Use Execution Script essere nre teen enne rre enne tnnn nenne 31 3 4 6 External RAM Post Use Execution Script ceecessssssscssesecesesecsseeecsseceeesccseesecsaeeeeaecaeesesaeeaeesecseseeeeeeaeeaeeaeens 31 39 9 coComment COMM secs NR 31 3 6 Referring to the USD AAA 32 E MEME T CAUSE AE 32 A Precision 33 4 1 About the Generation Of USD Files ij ale ao caeso baec Iria esca 33 4 2 When Using the USD File in Another PC ceceececcessseeseesesecscsceseecenceseceesecceneeseseeneeseseeneeaceeenevsececneeseeecneeaeeeenenaeees 33 4 3 Aboutthe Script Command sssssesseseseeeeeneeeneneeenn enne EA NEEE EEE EEEE ER E RR RR RR anar EErEE enne 34 R20UT1966EJ0101 Rev 1 01 Page 6 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manu
4. GUI Strings enclosed in double quotes represent the values set for each EFE GUI item R20UT1966EJ0101 Rev 1 01 Page 4 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Contents Contents Lo SUMMA Ya scada E 7 1 1 Basics Gre atio SEC 7 1 2 Position of the Product ooccnniciccnonocicnnonoconnnonononncnnononnonno none cnn none ona no trennt trente trente tren RR eret tr RR Ona etri tee tr tnnt enne 8 1 3 Setup Procedute ula pelo hd ale cubs andado HER eR tree das 9 Ie IG E M 9 1 5 Definition File Creation APP O 10 2 RED File Creation Tab RR 12 2 1 Manufacturer s Name 5 oni ertet Gti li bees tenis 13 22 Manufacturer IDs ecimiento encensenvoes 13 2 9 Device Name URREENEREERH SHEEP eRES E ERES EUR ELE EN ERU wavncapeocnn ERREUR OR EAS EEA VUE VE LU ee CE ER ERU EUR UR OURG 13 ZA DO 3 NN 14 MEME A E 14 2 6 Number of Sectors RAS 15 Ze T re de CE HEISE MR T NE E T ex buenss A E A E E T N E E 15 2 8 Chip Erase UU RR 15 2 9 Siero uedan Dlana Ae A E E A E S 16 2 9 1 Edit Areasa castitatis A On Ad e EH e E Ue eati es 16 2 9 2 List Manipulation Buttons ERE 16 2 9 3 BEANS 17 2 9 4 Size Display Area euenire te Rr Ot vie E REDDE rrr eb HP lalola erbe ty ate ERR RS 18 2 10 Program Methods A ine ee epe ine ocean e Ene eee ete E e s eU bd eee e ee e ee EP ee 18 2 11 Supported Bus Widih a esee et oer
5. beforehand you can save the time that might otherwise be taken for various settings after executing a download For details about the commands usable in a script file see Section 4 3 About the Script Command 35 Comment Column You can enter any character string as a comment here The comment you enter is recorded in the USD file R20UT1966EJ0101 Rev 1 01 Page 31 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 6 Referring to the USD File To re edit the USD file you ve created or create a new USD file based on the USD file you ve created specify the source USD file here that you want to edit or from which to create 3 7 Save USD File This button saves the USD file Tf the input content of the file is incomplete or erroneous an error message is output and the save operation is canceled In that case correct the content according to the instructions of the error message R20UT1966EJ0101 Rev 1 01 Page 32 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Precautions 4 Precautions 4 1 About the Generation of USD Files The USD files should be created following the rules described below 1 Basically create one USD file per flash memory device However flash memory devices are used in parallel connected form as in an 8 bit x 2 8 bit x 4 or 16 bit x 2 form handle the whole as one flash memory device and create one USD file for tho
6. manufacturer ID or manufacturer code for example Table 2 1 Examples of Manufacturer ID Device manufacturer Note The above examples are shown for reference only Please be sure to consult the data sheet of your device manufacturer 2 3 Device Name Fill in the product type name of your flash memory device The product type name you enter here is displayed on screen when RFD files are loaded on the USD file creation tab R20UT1966EJ0101 Rev 1 01 Page 13 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab 2 4 Device ID Fill in the device ID of your flash memory device The device ID in the data sheet of each device manufacturer may be stated as device ID device code signature ID or signature code for example Depending on the type of flash memory device concerned the device ID may consist of multiple words In such a case enter only the first word of a device ID For example if the ID of your flash memory device is stated as follows in its data sheet then enter 227E Table 2 2 Example of Entering a Device ID 1 DEVICE CODE 227Eh 2220h 2200h Also for flash memory devices whose data bus width is switchable the device ID may be stated separately by bus width In that case enter the value given for the larger bus width than the other For example if the ID of your flash memory device is stated as follow
7. pin of the external flash and output a 0 to the most significant address A24 when CS2 low or a 1 when CS1 low Figure 3 5 Example of Using a Memory Offset In the above example CS2 and CS1 need to be set as follows m CS2 area Base Address 06000000 h End Address 06FFFFFF h Memory Offset 00000000 h m CSI areas Base Address 07000000 h End Address O7FFFFFF h Memory Offset 0O1000000 h To the CS2 area map the first half of the flash memory Change the initial value of the end address from 07FF FFFFh to the end address of the CS2 area OGFF FFFFh To the CS1 area map the latter half of the flash memory For the memory offset set 0100 0000h an amount equal to the size of the CS2 area The end address is automatically changed from 08FF_FFFFh to 07FF FFFFh simultaneously as the memory offset changes R20UT1966EJ0101 Rev 1 01 Page 29 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 3 4 Mapping Information Window This window shows the mapping start address and size per sector The content of this window is updated in real time according to the input values of Base Address End Address and Memory Offset No Start Address SizelkB 0 0700000 8 1 07002000 8 2 07004000 8 3 07006000 8 4 07008000 8 Y Figure 3 6 Mapping Information Window 3 35 Pre Download Execution Script Immediately before a downlo
8. 0 External Flash Definition Editor User s Manual 434 NE SAS Renesas Electronics Corporation R20UT1966EJ0101
9. 424 NESAS C CD D m o lt Y v External Flash Definition Editor EFE Users Manual All information contained in these materials including products and product specifications represents information on the product at the time of publication and is subject to change by Renesas Electronics Corporation without notice Please review the latest information published by Renesas Electronics Corporation through various means including the Renesas Electronics Corporation website http www renesas com Renesas Electronics WWW renesas com Rev 1 01 Mar 2012 10 11 12 Notice All information included in this document is current as of the date this document is issued Such information however is subject to change without any prior notice Before purchasing or using any Renesas Electronics products listed herein please confirm the latest product information with a Renesas Electronics sales office Also please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website Renesas Electronics does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document No license express implied or otherwise is granted hereby under any patents copyrights o
10. Rev 1 01 Page 27 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 3 2 End Address Set the mapping end address of the flash memory Normally set base address flash memory size 1 0700_0000h CS1 area 16 MB 077F FFFFh 8 MB O7FF_FFFFh O7FF FFFFh A B Microprocessor address space External flash memory Example for the case where 8 MB flash memory devices are mapped to the CS1 area by the RX610 Figure 3 4 Example of Setting the End Address If the end address exceeds the CS boundary see Section 3 3 3 for details on how to set R20UT1966EJ0101 Rev 1 01 Page 28 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 3 3 Memory Offset When using large capacity flash memory that may take up two or more of consecutive external CS areas of the microprocessor you need to prepare separate USD files one for each CS area In such a case it is necessary to set a memory offset Memoryaddress 32 MB device 0600 0000h 0000 0000h Base address CS2 area Memory offset 0700 0000h 0100 0000h 16MB O7FF_FFFFh O1FF_FFFFh End address Microprocessor address space External flash memory Example for the case where the first half of 32 MB flash memory is mapped to the CS2 area and the latter half is mapped to the CS1 area by the RX610 An external circuit is required that will input CS2 amp CS1 to the CE
11. a download is executed and automatically restored from the stack after the download is completed 3 41 Base Address Set the mapping start address of the work RAM Specify the internal RAM or one of RAMs connected to the external bus hereafter called an external RAM 3 42 Size Displayed here is the necessary size of the work RAM that is automatically calculated 3 4 3 External RAM When you use an external RAM as the work RAM check this checkbox 3 4 4 Width of Access Specify the width of access of the external RAM 3 45 External RAM Pre Use Execution Script If you ve chosen to use an external RAM it is possible to automatically execute a command script of HEW immediately before use of the work RAM begins Here specify the script file to be executed on that occasion By writing the external bus controller settings etc needed for accessing the external RAM in a script beforehand you can save the time that might otherwise be taken for various settings before executing a download For details about the commands usable in a script file see Section 4 3 About the Script Command 3 46 External RAM Post Use Execution Script If you ve chosen to use an external RAM it is possible to automatically execute a command script of HEW immediately after use of the work RAM is finished Here specify the script file to be executed on that occasion By writing the external bus controller setting write back processes etc in a script
12. ad process it is possible to execute a command script of HEW Here specify the script file to be executed on that occasion By writing the external bus controller settings etc needed for accessing the external flash in a script beforehand you can save the time that might otherwise be taken for various settings before executing a download If a download is executed while the CPU clock remains set to a low speed it is possible that processing will take an extremely long time or will not terminate normally We recommend that a setting to speed up the CPU clock be written in this script For details about the commands usable in a script file see Section 4 3 About the Script Command 3 3 6 Post Download Execution Script Immediately after a download process it is possible to execute a command script of HEW Here specify the script file to be executed on that occasion By writing the external bus controller setting write back processes etc in a script beforehand you can save the time that might otherwise be taken for various settings after executing a download For details about the commands usable in a script file see Section 4 3 About the Script Command R20UT1966EJ0101 Rev 1 01 Page 30 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 34 Work RAM Set up the work RAM as needed for program to flash memory The work RAM data is automatically saved to the stack before
13. al Summary 1 Summary The flash memory devices connected externally to the external buses of a microprocessor are referred to as external flash memory Also the function of an emulator system to download into or rewrite data in external flash memory is referred to as the external flash download function The External Flash Definition Editor hereafter referred to as the EFE is the utility software to create the definition files that are needed to use the external flash download function When you ve created an external flash memory definition file with the EFE register it in the emulator software that supports this function That way it becomes possible to use the external flash download function 1 1 Basic Composition The EFE consists of the editor body and standard program The editor body generates the following definition files in GUI based software 1 Flash memory device definition file RFD file Defines the specification of a flash memory device 2 User system definition file USD file Defines how external flash memory will be used in a user system environment and includes a write program It is this file that is registered in the emulator software The standard program preinstalled in this product is a program for writing to flash memory The standard program is implemented by using the standard flash memory commands generally accepted for flash devices and can therefore be used for most fl
14. ash memory The standard program supports the following functions 1 JEDEC method 2 CUI method 3 Fast programming mode write buffer programming and successive programming by UnlockBypass 4 Parallel connection of flash memory devices 5 Program to flash after the lock bit is cleared R20UT1966EJ0101 Rev 1 01 Page 7 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Summary 1 2 Position of the Product The EFE is a common utility software independent of any specific emulator system Figure 1 1 schematically shows the position of the product in user systems RFD file C l External Flash Definition Editor 1 J USD file B USD file C USD file A Usage pattern in Usage pattern in Usage pattern in user system A ig user system B i user system C External flash memory External flash memory External flash memory registration dialog registration dialog registration dialog Emulator software C Microprocessor C Emulator software A Emulator software B I I I I I I I I l I ll i I I I I Emulator A Emulator B A I I I I I I I I TI Microprocessor A Microprocessor B Flash memory A Flash memory B Flash memory C User system A User system B User system C Figure 1 1 Position of the Product R20UT1966EJ0101 Rev 1 01 Page 8 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Summary 13 S
15. ate Edit A List manipulation buttons List window v 16384 16384 Mr 270 270 Size display area Figure 2 2 Sector Structure Group 2 9 1 Edit Area Enter the sector structure of your flash memory device in the form size of one sector x number of consecutive sectors When you click the Add or the Update button the contents you ve entered are reflected in the list window Until you finish defining the entire sector structure of your flash memory device in the list window add list lines from here 2 9 2 List Manipulation Buttons These buttons permit you to manipulate the list Add button Adds the content of the edit area to the list window If any line in the list window is selected the content is inserted into a place above the selected line If no lines are selected the content is inserted into the bottom line of the list Update button Replaces the content of a selected line with that of the edit area Edit button Shows the content of a selected line of the list window in the edit area A button Moves a selected line one line up in the list to change places V button Moves a selected line one line down in the list to change places Remove button Removes a selected line from the list window R20UT1966EJ0101 Rev 1 01 Page 16 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab 2 9 3 List Window Shows the sector structure yo
16. e 8 Open the external flash memory registration screen of the emulator software x Cu System Intermed faih memory ovemte Ertaina faih memory Flash memory 9 Register the USD file Mapping of external flash memory oK Cancel Do noi show thes dalog box agan Figure 1 3 Definition File Creation Flow R20UT1966EJ0101 Rev 1 01 Page 11 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab 2 RFD File Creation Tab On the RFD file creation tab fill in the specification of a flash memory device to generate an RFD file Before proceeding please prepare a data sheet for the flash memory device you use R20UT1966EJ0101 Rev 1 01 Mar 01 2012 External Flash Definition Editor V 1 00 Release 01 A i Mewu TE Cc Na Ex mu JEDEC standard command zi Kee Ad Edi 555 ESA mW pss ese Figure 2 1 RFD File Creation Tab Page 12 of 37 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab 24 Manufacturer s Name Fill in the manufacturer s name of your flash memory device The manufacturer s name you enter here is displayed on screen when RFD files are loaded on the USD file creation tab 2 2 Manufacturer ID Fill in the manufacturer ID of your flash memory device The manufacturer ID in the data sheet of each device manufacturer may be stated as maker ID maker code
17. ect and Block Unprotect depending on device manufacturers R20UT1966EJ0101 Rev 1 01 Page 23 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 2 6 Connection Form Standard Program Specify the form of connection between the microprocessor and flash memory From the pulldown menu list select the connection form that suits your working environment The list shows only the usable connection forms as determined from the flash memory used and the currently selected CPU The meaning of each displayed form of connection is as follows 1 8bit x 1 One flash memory device in data bus width of 8 bits is connected Therefore the data bus is 8 bits wide 2 8bit x 2 Two flash memory devices in data bus width of 8 bits are connected in parallel Therefore the data bus is 16 bits wide 3 8bit x 4 Four flash memory devices in data bus width of 8 bits are connected in parallel Therefore the data bus is 32 bits wide 4 16bit x 1 One flash memory device in data bus width of 16 bits is connected Therefore the data bus is 16 bits wide 5 16bit x 2 Two flash memory devices in data bus width of 16 bits are connected in parallel Therefore the data bus is 32 bits wide 6 32bit x 1 One flash memory device in data bus width of 32 bits is connected Therefore the data bus is 32 bits wide Figure 3 2 shows the relationships between the connection forms and aggregate memor
18. electing a Write Program Select the type of write program you want to use for program to flash memory m Standard Program Selecting this radio button uses the standard program preinstalled in this product The standard program is written using the standard flash memory commands supported by every device manufacturer and can therefore be used for the majority of flash memory devices For the options available when Standard Program is selected see Sections 3 2 2 through 3 2 6 m Custom Program For flash memory devices for which the standard program is not usable select this radio button In this case you specify a write program you ve prepared yourself For the options available when Custom Program is selected see Sections 3 2 7 through 3 2 8 3 22 CPU Choose the CPU type of your microprocessor from the pulldown menu 3 23 Endian For bi endian microprocessors specify the appropriate endian that suits the working environment For endian fixed microprocessors Endian is automatically displayed 3 24 Fast Programming To execute programs to flash memory in fast programming mode check this checkbox You can select this checkbox when your flash memory device supports one or both of the following programming modes If you cannot program normally in fast programming mode deselect this checkbox m Write Buffer Programming This programming mode is provided for flash memory devices that have write buffer memory Data is transferred o
19. endian CPUs it is necessary that the program be compiled using little endian format irrespective of its run time CPU endian Endian conversions executed in the emulator software Write buffer programming Write to buffer 256 bytes or less When you create a custom program see the separately supplied sample program for reference 3 28 Connection Form Custom Program Specify the form of connection between the microprocessor and flash memory From the pulldown menu list select the connection form that suits your usage conditions The meaning of each displayed form of connection is the same as in Section 3 2 6 Page 26 of 37 R20UT1966EJ0101 Rev 1 01 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 3 Flash ROM Specify the address mapping of flash memory and the command script automatically issued before and after a download 3 3 1 Base Address Set the mapping start address of the flash memory Specify the address boundary that matches the flash memory size However if you specify Memory Offset here there is no need to specify it OK 8 MB boundary 0700_0000h 5 Not 8 MB boundary 0740 0000h 0780 0000h 8 MB boundary OK A B 07FF_FFFFh Microprocessor address space External flash memory Example for the case where 8 MB flash memory devices are mapped to the CS1 area by the RX610 Figure 3 3 Example of Setting the Base Address R20UT1966EJ0101
20. eter pes fees to ic ba toe Pe A B Eea db bu voe vo etes ys cn Cu REB VER de coca 18 2 12 JEDEC Commands esee RR RRA tette treten ennt tete innert tn eren 19 2 13 Fast Programming Support ennt ennn etre RR RR NEENA enne nne rennen rennen nnns 19 2 14 Load RED Files acies ern e ER DA Ra a RR eer e e eer e 20 ALME A E 20 3 USD File Creation Tab nete trennt treni KANOE ENEKEN SEENEN NEOSEEKER SVEO EEEE EEEE ENESES 2 3 1 Refern g tothe RED File ore hob s ea o e i be t ER ELE Eo Rer EROR E Des EUER ERR eo eie Ue CEDE BA MER dees 22 3 2 Flash Write Program RNA 22 3 2 1 Selecting a Wrte PEIOBEAIIL sienne reete epe ti ebbe EUR 22 3 2 2 e ron 22 3 2 3 liu E 22 3 2 4 Fast Programming Em 22 3 2 5 AA pL ea eek eta 23 3 2 6 Connection Form Standard Program eene entree tren nennen nennen ener ne 24 3 2 7 Specifying a Custom Program Path sees nennen nennen innen etre nne trennen nee nennen nens 26 R20UT1966EJ0101 Rev 1 01 Page 5 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Contents 3 2 8 Connection Form Custom Program oooooccnnncnncnnncnnnnnonenonoconoconcnnncon ccoo nono nono enne nent nne ttes etr nn nr ee trennen innen nennen 26 39 Flas hROM ioter A EUR IS 27 3 3 1 Base Address e en Ut ED ei dete E E e Heel dave e ga o del tage i ee bap e E edad 27 3 3
21. etup Procedure Download the External Flash Definition Editor from the EFE product site Extract the downloaded file in any folder you want 3 Launch EFE exe in the extracted folder 1 4 Folder Structure Figure 1 2 shows the folder structure of this product Top folder EFE exe Editor body EFE j CHM Japanese help EFE e CHM English help EFE Release txt Release version file Program Standard program Microprocessor family jedec normal rx mot jedec buffer rx mot jedec bypass rx mot Write programs cui normal rx mot Folders classified by microprocessor family cui buffer rx mot jedec normal r32c mot jedec buffer r32c mot jedec bypass r32c mot cui normal r32c mot cui bufffer r32c mot Figure 1 2 Folder Structure R20UT1966EJ0101 Rev 1 01 Page 9 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Summary 1 5 Definition File Creation Flow There are following two types of definition files that can be created with the EFE m RFD File Renesas Flash Definition file m USD File User System Definition file The RFD file is the one that defines the specification of the flash memory device used These files serve as input files for a USD file when it is created The USD file is the one that defines the manner of how flash memory will be used in a user system and the additional processing to be performed when programming to flash memory The program used for writing to flash memory is
22. fying Fast Programming Support m Successive Programming JEDEC method Table 2 5 Successive Programming JEDEC method mode 3rd addr Unlock Bypass Entry 555h 2AAh 555h 8bit AAAh Unlock Bypass Program__ X aoh PA PD NN Unlock Bypass Reset____ X 90h X 00h E PA Program Address PD Program Data R20UT1966EJ0101 Rev 1 01 Page 19 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab m Write Buffer Programming JEDEC method 2 6 Write Buffer Programming JEDEC method Command mode pes meto em sss aan ann ssh Ba 25h BA m PA Po BA 20h BA Block Address sector address N Number of Words to be programmed 1 PA Program Address PD Program Data m Write Buffer Programming CUI method Table 2 7 Write Buffer Programming CUI method Command Write to Buffer and BA E8h BA PA DOh Program BA Block Address sector address N Number of Words to be programmed 1 PA Program Address PD Program Data 2 14 Load RFD File To edit the RFD file you ve created or create a new RFD file based on the RFD file you ve created specify the source RFD file here that you want to edit or from which to create 2 15 Save RFD File This button saves the RFD file If the input content of the file is incomplete or erroneous an error message is output and the save operation is canceled I
23. included in this file By registering this file in the emulator software it becomes possible to use the external flash download function Figure 1 3 shows a flow of operations according to which definition files are generated R20UT1966EJ0101 Rev 1 01 Page 10 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Summary 1 Open the RFD file creation Tab of the EFE I sternal Flash Definuton F chtor V 1 00 Release 0 FFD Fie Creation USD Fie Creaton Creation flow SA E Editing flow Mandschaer s Name Mandachaei O imc 0020 M Device Name Device I0 e WIF RE M Number of Sector Sector Erase Tne Chip Erare Time Capacty Sector Hinchas 2 Fill in the specification of a flash memory device RFD file editing TS Tea 4 Open the USD file creation tab of the EFE Extemal Flash Delinitson Editor Y 1 00 Release 07 A BFD Fis Colon USO Fi es 5 Load the RFD files AFD Fie DEF MED WAN Bene Morntocturer s Name Simro Device Name MESOWIZS Casoy T6304 Ke Flash Wite Progam Sundwd Progon F farPogaweo Cow Lock Da Bane Ades End adm Bano Actress xou O fend FAM cu Erdan T Correci n Fom C Gunton Progam ar i p Ress fec 6 Fill in the manner of use in a user system Flash ROM Wod RAM Pm tm r3 USD file editing oe BEB BBB RBBB RBBB RRR Ree eee ee eee eee I gea ome H d 7 Save USD files LosiUSDfe Gave USD fie pa Heb
24. n that case correct the content according to the instructions of the error message R20UT1966EJ0101 Rev 1 01 Page 20 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 USD File Creation Tab On the USD file creation tab you create a USD file that defines the manner of how your flash memory will be used By registering a USD file in the emulator software you ll have your flash memory device recognized as external flash memory External Flash Definition Editor V 1 00 Release 01 PEER AA 3596 ol Iv dv m mw x Peatones zl EN GRECIA DIOSES zi s ND Ma z Width of Focess wm weg Mena TA Sea SEEREGUIUGTTUS GTI 07000000 07002000 07004000 07006000 07008000 D EFE rx600_bus_before hde D AEFE r BOD bus after hdc Load USD fie Save USD fi Figure 3 1 USD File Creation Tab R20UT1966EJ0101 Rev 1 01 Page 21 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 1 Referring to the RFD File Specify the RFD file to be referred to To create a new USD file you first need to specify the appropriate RFD file here Of the loaded information three items of information Manufacturer Name Device Name and Capacity are displayed in the area below this box 32 Flash Write Program This group of the dialog is used to set a program for writing to flash memory 3 21 S
25. nal Flash Definition Editor user s Manual RFD File Creation Tab 242 JEDEC Commands Set the command address pattern used in the JEDEC method When you put a check mark in the supported bus width checkbox the default command address pattern is displayed For almost all flash memory devices these default settings do not need to be altered without causing any problem However products from some device manufacturers require different settings In that case alter the values of the default command address pattern according to the contents stipulated in the product data sheet 2 13 Fast Programming Support If your flash memory device supports the fast programming mode put a check mart in the appropriate checkbox For the JEDEC method you can check the Successive Programming and Write Buffer Programming checkboxes If both of these methods are supported put a check mark in both checkboxes For the CUI method you can check only the Write Buffer Programming checkbox If you ve checked Write Buffer Programming enter the write buffer size in byte units which is internally available in your flash memory device Figure 2 5 shows when the JEDEC method selected an example of how to specify for a flash memory device that supports both Successive Programming and Write Buffer Programming m Fast Programming Support IV Successive Programing IV write Buffer Programing Size of buffer 64 Bytes Figure 2 5 Example of Speci
26. ne word in one bus cycle m Successive Programming This mode can be specified for only the JEDEC method With part of program commands omitted data is transferred one word in two bus cycles R20UT1966EJ0101 Rev 1 01 Page 22 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 2 5 Clear Lock Bit If you want to program to flash memory after clearing the lock protect bits set for its sectors check this checkbox Note that the editor does not perform a relock process after completion of the program operation m JEDEC method The commands listed in Table 3 1 are used to clear the lock bits Table 3 1 Lock Set Clear Commands when JEDEC Method is selected ta as xxr pons s p xem sur oen BA Block Address sector address These locks are effective only during the 16 bit mode Therefore these locks are effective only when the flash memory is connected in the 16 bit x 1 or 16 bit x 2 form The command names may not always be expressed as Set Lock bit and Clear Lock bit depending on device manufacturers m CUI method The commands listed in Table 3 2 are used to clear the lock bits Table 3 2 Lock Set Clear Commands when CUI Method is selected Block Protect Block Unprotect BA Block Address sector address When Block Unprotect is executed the lock of the entire chip is unlocked The command names may not always be expressed as Block Prot
27. nt equipment audio and visual equipment home electronic appliances machine tools personal electronic equipment and industrial robots High Quality Transportation equipment automobiles trains ships etc traffic control systems anti disaster systems anti crime systems safety equipment and medical equipment not specifically designed for life support Specific Aircraft aerospace equipment submersible repeaters nuclear reactor control systems medical equipment or systems for life support e g artificial life support devices or systems surgical implantations or healthcare intervention e g excision etc and any other applications or purposes that pose a direct threat to human life You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics especially with respect to the maximum rating operating supply voltage range movement power voltage range heat radiation characteristics installation and other product characteristics Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges Although Renesas Electronics endeavors to improve the quality and reliability of its products semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions Further Renesas Electronics prod
28. on 2 5 Capacity and Section 2 6 Number of Sectors respectively The total memory capacity of list lines and the total number of sectors of list lines are automatically recalculated and redisplayed each time the list is updated When the left and right values of either item match the color of the item name changes to green showing an agreement with the expected value Conversely if the left side value of either item exceeds its right side value the color of the item name changes to red showing that the input value does not agree When the entire sector structure is entered correctly Capacity Kbytes and Number of Sectors both are displayed in green 2 10 Program Method For the program method select either JEDEC standard command method or CUI command method 2 11 Supported Bus Width Put a check mark in the appropriate checkbox for the data bus width supported by your flash memory device If your flash memory device is a type that permits the bus width to be switched by pin control put a check mark in all of the supported bus width checkboxes For example if the data sheet of your flash memory device stipulates its bus width as follows 128 Mbit 16 Mb x 8 or 8 Mb x 16 then check the bus width checkboxes as shown below r Bus width V 8bit JV 16bit 32bit Figure 2 4 Example of Setting Up the Supported Bus Width R20UT1966EJ0101 Rev 1 01 Page 18 of 37 Mar 01 2012 RENESAS Exter
29. r other intellectual property rights of Renesas Electronics or others You should not alter modify copy or otherwise misappropriate any Renesas Electronics product whether in whole or in part Descriptions of circuits software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples You are fully responsible for the incorporation of these circuits software and information in the design of your equipment Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits software or information When exporting the products or technology described in this document you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military including but not limited to the development of weapons of mass destruction Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture use or sale is prohibited under any applicable domestic or foreign laws or regulations Renesas Electronics has used reasonable care in preparing the information included in this document but Renesas Electronics does not warrant tha
30. s in its data sheet then enter 1234 Table 2 3 Example of Entering a Device ID 2 A A 16 bit mode DQ15 DQ8 DQ7 DQO DQ15 DQ8 DQ7 DQO DEVICE CODE 25 Capacity Enter the memory capacity in Kbyte or Mbyte units For memory capacities the following applies 1 Kbyte 1 024 bytes 1 Mbyte 1 024 Kbytes For example if the capacity of your flash memory device is stated as 128 Mbits 16 Mb x 8 or 8 Mb x 16 then enter 16 Mbyte or 16384 Kbyte R20UT1966EJ0101 Rev 1 01 Page 14 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab 2 6 Number of Sectors Enter the aggregate number of sectors in your flash memory device For even flash memory devices whose sector sizes are irregular enter simply the number of sectors irrespective of the difference in sizes of individual sectors 2 7 Sector Erase Time Enter the maximum sector erase time in seconds Fractional digits after the decimal point can also be entered However do not enter a value more than 32 seconds 28 Chip Erase Time Enter the maximum erase time of the entire chip in seconds R20UT1966EJ0101 Rev 1 01 Page 15 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab 2 9 Sector Structure Figure 2 2 shows the composition of the sector structure group of the editor screen m Sector Structure Size Number Edit area KByte NEN Add Upd
31. se devices 2 For a type of flash memory device that takes up two or more external CS areas create USD files separately one for each CS area For details see your emulator software manual In that case use a memory offset as you create a USD file for each CS area 42 When Using the USD File in Another PC The script file you specify on the USD file creation tab is saved in the USD file in the form absolute file path file name Therefore if you want to use an existing USD file that has had a script file specified in another PC you need to edit the path to the script file to make it suitable for the PC environment you use Here is the edit process 1 Install EFE in the PC you use 2 Launch EFE and open the USD file creating tab 3 Use the Load USD File button to load the USD file you ve obtained 4 In the script specification menu edit the destination into which the script file is to be loaded 5 Click the Save USD File button and a new USD file is created R20UT1966EJ0101 Rev 1 01 Page 33 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Precautions 43 About the Script Command On the USD file creation tab you can specify one of the following script files Pre download execution script Post download execution script External RAM pre use execution script External RAM post use execution script In the above script files the following command format is supported
32. t such information is error free Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein Renesas Electronics products are classified according to the following three quality grades Standard High Quality and Specific The recommended applications for each Renesas Electronics product depends on the product s quality grade as indicated below You must check the quality grade of each Renesas Electronics product before using it in a particular application You may not use any Renesas Electronics product for any application categorized as Specific without the prior written consent of Renesas Electronics Further you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as Specific or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics The quality grade of each Renesas Electronics product is Standard unless otherwise expressly specified in a Renesas Electronics data sheets or data books etc Standard Computers office equipment communications equipment test and measureme
33. te 1 Renesas Electronics as used in this document means Renesas Electronics Corporation and also includes its majority owned subsidiaries Note 2 Renesas Electronics product s means any product developed or manufactured by or for Renesas Electronics External Flash Definition Editor user s Manual Introduction Introduction The External Flash Definition Editor hereafter referred to as the EFE is the utility software to create the definition files that are needed to use the external flash download function When you ve created an external flash memory definition file with the EFE register it in the emulator software that supports this function That way it becomes possible to use the external flash download function R20UT1966EJ0101 Rev 1 01 Page 3 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual Abbreviations and Manual Notation Abbreviations Following abbreviations and abbreviated words are used in this manual EFE O ExtemalFlash Definition Editor this product External flash memory Flash memory devices connecting to a microprocessor s external bus HEW High performance Embedded Workshop or the integrated development environment from Renesas Manual Notation Following notations are used in this manual Strings enclosed in represent the EFE GUI item names parameter Strings enclosed in single quotes represent the parameters selected in the EFE
34. u ve entered in list form Each line in the list is selected when you click on it allowing you to perform any operation on it using the list manipulation button Be sure the list is aligned in order of ascending memory addresses from top to bottom of the list window For flash memory devices that have a sector structure like the one in Table 2 4 for example set up the list as in Figure 2 9 Table 2 4 Example of a Sector Structure KByte x8 KWord x16 0 64 1F_0000h 1F_FFFFh o 32 OF 8000n 0F FFFFh 32KBx1 32 8 00 6000h 00 7FFFh see f 38 8 00 4000h 00 5FFFh 16KBx1 34 8 00 0000h 00 IFFFh Capacity Number of Sectors 2 MByte y 35 Sector Structure Size Number 64 KByte 31 Add 2048 2048 Mm 5 5 Figure 2 3 Example of Setting Up the List Window R20UT1966EJ0101 Rev 1 01 Page 17 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual RFD File Creation Tab 2 9 4 Size Display Area After calculating the entire memory capacity of the list and the number of sectors in the list window it shows the result in the form shown below Capacity Kbytes Total memory capacity of list lines aggregate memory capacity Number of sectors Total number of sectors of list lines aggregate number of sectors The aggregate memory capacity and the aggregate number of sectors here show the values you ve set in Secti
35. ucts are not subject to radiation resistance design Please be sure to implement safety measures to guard them against the possibility of physical injury and injury or damage caused by fire in the event of the failure of a Renesas Electronics product such as safety design for hardware and software including but not limited to redundancy fire control and malfunction prevention appropriate treatment for aging degradation or any other appropriate measures Because the evaluation of microcomputer software alone is very difficult please evaluate the safety of the final products or system manufactured by you Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances including without limitation the EU RoHS Directive Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations This document may not be reproduced or duplicated in any form in whole or in part without prior written consent of Renesas Electronics Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products or if you have any other inquiries No
36. y capacities in respective cases where 1 MB data 8 bits wide 1 MB data 16 bits wide and 1 MB data 32 bits wide flash memory devices are connected R20UT1966EJ0101 Rev 1 01 Page 24 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 1 8bitx1 2 8bitx2 3 8bitx4 D7 DO D15 D8 D7 DO D31 D24 D23 D16 D15 D8 D7 DO 0 0000h 00 0001h 00 0000h 00 0003n 000002h 00 0001h 00 0000h h O0 0001h 00 0003 00 0002h 00 0007h 000006h 00 0005h 00 0004h F FFFEh 1F FFFDh 1F FFFCh 3F FFFBh 3F FFFAh 3F FFF9h 3F FFF8h F FFFFh 1F FFFFh 1F_FFFEh 3F_FFFFh 3F_FFFEh 3F_FFFDh 3F FFFCh Total 1MB Total 2MB Total 4MB 4 16bitx1 5 16bitx2 F FFFDh F FFFCh 1F FFFBh 1F FFFAh 1F FFF9h 1F FFF8h F FFFFh F FFFERh 1F FFFFh 1F FFFEh 1F FFFDh 1F FFFCh Total 1MB Total 2MB 6 32bitx1 D31 D24 D23 D16 D15 D8 D7 DO 0 0003h 0 0002h 0 0001h O0 0000h oo pp F FFFFh F FFFEh F FFFDh F FFFCh Total 1MB Figure 3 2 Relationships between the Connection Forms and Aggregate Memory Capacities R20UT1966EJ0101 Rev 1 01 Page 25 of 37 Mar 01 2012 RENESAS External Flash Definition Editor user s Manual USD File Creation Tab 3 27 Specifying a Custom Program Path Specify a file path to the custom program The custom program must meet the following requirements File format Motorola S format Code size 8 192 bytes or less Endian For bi
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