160‐W, Wide Mains, PFC Stage Driven by the NCP1602 Evaluation
Contents
1. 0 5 0 20 40 60 80 100 Percent Of Max Output Power Figure 9 Evaluation Board PF vs Output Power 100 Output Power Corresponds to 160 W NCP1602 Total Harmonic Distortion vs Vyans amp Output Power Line Current THD 96 25 00 20 00 15 00 10 00 THDI 265 V rms gt THDi 230 V rms 5 00 ee THDi 110 V rms e THDi 90 V rms 0 00 0 10 20 30 40 50 60 70 80 90 100 Percent Of Max Output Power Figure 10 Evaluation Board THD vs Output Power 10096 Output Power Corresponds to 160 W www onsemi com 9 NCP1602GEVB PROTECTION OF THE STAGES The NCP1602 protection features allow for the design of very rugged PFC stages Brown Out Brown out detection is disabled in product option AEA which is used in this Evaluation Board If brown is needed check which option is needed using the product data sheet 2 and use the application note 1 for operating details Over Current Protection OCP The NCP1602 is designed to monitor the current flowing through the power switch A current sense resistor R3 of Figure 2 is inserted between the MOSFET source and ground to generate a positive voltage proportional to the Measure P2fall8020 C1 MOSFET current Vcszcp When Vcszcp exceeds a 500 mV internal reference the circuit forces the driver low A 400 ns blanking time prevents the OCP comparator from tripping because of2. Table 4 NCP1602GEVB BILL OF MATERIALS FOR ZCD DETECTION USING AUXILIARY WINDING Vaux Reference Qty Description Value Constraints Number C3B C3C C13 1 Capacitor 100 nF 50 V SMD 1206 Various Various C10 1 Capacitor 220 nF 50 V SMD 1206 Various Various 1 Capacitor 2 2 uF 50 V SMD 1206 Various Various C9 Capacitor NC Common Mode Filter 2 x 3 3 mH Through Hole Wurth Elektronik 750341632 CM1 1 Boost Inductor 200 uH Boost Diode MUR550 Bypass Diode 1N5406 Through Hole 5 A 520 V 3 A 600 V Wurth Elektronik 750370081 EFD30 Through Hole ON Semiconductor MUR550APFG Through Hole ON Semiconductor 1N5406G Switching Diode 1N4148 SOD123 ON Semiconductor MMSD4148T1G 33 V Zener Diode MMSZ33T1 33 V 0 5 W SOD123 ON Semiconductor MMSZ33T1G Diodes Bridge GBU406 4 600 V Through Hole LITE ON GBU406 Power MOSFET IPASOR250CP 550 V Ja Resistor 680 kQ 196 1 4 W Resis 1800 kQ Resisto 02 Resistor 27 kQ Capacitor 1 nF ol A 6 A pk 50V 5 TO220 C SMD 1206 SMD 1206 SMD 1206 SMD 1206 SMD 1206 1 1 4 W 1 1 4W 1 1 4 W 10 25 V IPASOR250CP Various Various Various Various Various z gt R22 1 NC Switch MOSFET NA NA N E NA NA NA E gt E gt Resistor A NA NA NA NA Q2 1 R30 1 R21 1 Resistor PIT AW 1 1 1 Resistor Resistor NC Resis 02 100 2 47 nF Resisto
3. BOM for modifying the evaluation board in order to use the auxiliary winding voltage instead of the power MOSFET drain voltage for CS ZCD pin While this evaluation board uses the power MOSFET drain voltage for ZCD detection using the CS ZCD pin it is possible to configure this same evaluation board for using the auxiliary winding voltage to feed the CS ZCD pin for ZCD detection The power section of the schematic does not change it is only the control schematic which changes The components on the path between the power MOSFET drain and CS ZCD pin must be removed and new components placed between the auxiliary winding voltage Vaux and CS ZCD pin must be added The details of this modification are entirely described by the schematic of Figure 14 and the bill of materials of Table 4 Application note AND9218 D 1 gives the design procedure and equations Using the schematic using Aux Winding Voltage has pros and cons Pros e R3g and R39 Value can be Small and Sensitivity to Noise and Parasitic Capacitance is Reduced Consumes No Power during Standby even if R3g and R39 Value are Small Cons Brown Out Detection is Not Possible when Using Brown Out Activated Product Option The Simple Inductor Becomes a Transformer to which an Auxiliary Winding is Added o s 3 o a gt Figure 14 Application Schematic Control Section for ZCD Detection using Auxiliary Winding Vaux www onsemi com 15 NCP1602GEVB
4. Buyer shall indemnify and hold SCILLC and its officers employees subsidiaries affiliates and distributors harmless against all claims costs damages and expenses and reasonable attorney fees arising out of directly or indirectly any claim of personal injury or death associated with such unintended or unauthorized use even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part SCILLC is an Equal Opportunity Affirmative Action Employer This literature is subject to all applicable copyright laws and is not for resale in any manner PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT N American Technical Support 800 282 9855 Toll Free ON Semiconductor Website www onsemi com Literature Distribution Center for ON Semiconductor USA Canada P O Box 5163 Denver Colorado 80217 USA Europe Middle East and Africa Technical Support Order Literature http www onsemi com orderlit Phone 303 675 2175 or 800 344 3860 Toll Free USA Canada Phone 421 33 790 2910 TS Fax 303 675 2176 or 800 344 3867 Toll Free USA Canada Japan Customer Focus Center For additional information please contact your local Email orderlit onsemi com Phone 81 3 5817 1050 Sales Representative EVBUM2302 D
5. the switching spikes that occur when the MOSFET turns on In our application the theoretical maximal inductor current is 500 mV lindimax 6 25 A ea 1 80 MQ eq 1 Figure 11 shows the inductor current when clamped The over current situation was obtained 9 Vuarns 90 V rms with a 427 mA load A 20 V Vcc power source was applied to the board Tbase 5 52 ms Declench Ge 2 00 ms div Arr ter 2 00 MS 100 MS s Edge TV Positive Figure 11 Inductor Current Showing OCP Limitation Vmains 90 V rms Fars 60 Hz lj oAp 427 mA www onsemi com 10 NCP1602GEVB DYNAMIC PERFORMANCE The NCP1602 features the dynamic response enhancer DRE that increases the loop gain by an order of magnitude when the output voltage goes below 95 5 of its nominal level This function dramatically reduces undershoots in case of an abrupt increase of the load demand As an example Figure 12 illustrates a load step from 400 mA to 20 0 Vidiv 1 00 Vidiv 78 80 V ofst 3 0000 v 117 2 Y 0 mA and 0 mA to 400 mA 2 A ms slope 110 V rms input voltage One can note that as a result of the DRE function the control signal VCcTRL steeply rises multiple times when the FB voltage goes below 0 955 2 5 V 2 487 V Tbase 620 ms Declench 100ms div Arr ter 2 574 V 250M8 2 5MS s Edge Positive Figure 12 Load Current Transient Featuring Soft OVP and DRE A lj oAp 400 mA 0 mA Vmains 110 V rms Vcc 20 V www on
6. 0 psidiv Arr ter 5 0 GS s Edge 62 mv 100 ks Positive Figure 4 Typical Waveform in CrM Vans 110 V rms Fans 60 Hz lj oAp 400 mA www onsemi com 5 NCP1602GEVB DRAIN 1 j A A 1 B00 C3 MB Ci GG 20 0 Vidiv 100 Vidiv 100 Vidiv 100 mVidiv 2 00 usidiv Arr ter 62 mv 71 800 V 197 00 V 197 0 V ofst 101 0 mV 10045 5 0G8 s Edge Positive 7 955 V 141 31 V 1 115 4 VI L 2 5 mV 363 mV f 138 50 V f 155 8V f 13 7 mv Figure 5 Typical Waveform in DCM Vans 110 V rms Fuains 60 Hz ILoap 50 mA Thase 310 msi D clench gun 50 0 mVidiv 100 Vidiv 50 0 msidiv Arr ter 1 08V 2 500000 392 00 mv 411 00 V 2 50MS 5 0MS s Edge Positive 499 5 mV 526 V 521 5 mV Figure 6 No Load Waveforms for Option AEA Skip Mode Disabled Featuring Static OVP 2 Vans 230 V rms www onsemi com 6 NCP1602GEVB Measure 5 00 vidi 1 00 Vidiv 1 00 Vidiv 19 700 4 3 0000 V 0 0 mV ofst ST 2 52 Y 480 mv 9 20 V Figure 7 Start Up and Stop Sequence Vuans 90 V rms lj oAp 400 mA Voc OFF ON OFF Table 2 Verri VOLTAGE VS lLoap amp VMAINS VMAINS V rms ILOAD 400 mA ILOAD 300 mA ILOAD 100 mA ILOAD 50 mA ILOAD 0 mA 90 3 77 3 01 1 38 0 96 0 490 110 2 55 2 13 1 02 0 75 0 490 www onsemi com 7 NCP1602GEVB POWER FACTOR AND EFFICIENCY The NCP1602 evaluation board embeds a NTC to limit the in rush current that takes place w
7. ILLC owns the rights to a number of patents trademarks copyrights trade secrets and other intellectual property A listing of SCILLC s product patent coverage may be accessed at www onsemi com site pdf Patent Marking pdf SCILLC reserves the right to make changes without further notice to any products herein SCILLC makes no warranty representation or guarantee regarding the suitability of its products for any particular purpose nor does SCILLC assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability including without limitation special consequential or incidental damages Typical parameters which may be provided in SCILLC data sheets and or specifications can and do vary in different applications and actual performance may vary over time All operating parameters including Typicals must be validated for each customer application by customer s technical experts SCILLC does not convey any license under its patent rights nor the rights of others SCILLC products are not designed intended or authorized for use as components in systems intended for surgical implant into the body or other applications intended to support or sustain life or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application
8. NCP1602GEVB 160 W Wide Mains PFC Stage Driven by the NCP1602 Evaluation Board User s Manual Introduction Housed in a TSOP6 package the NCP1602 is designed to drive PFC boost stages in so called Valley Synchronized Frequency Fold back VSFF In this mode the circuit classically operates in Critical conduction Mode CrM when VCTRL pin voltage exceeds a product version programmable voltage level When VCTRL pin voltage is below this programmable level the NCP1602 linearly decays the frequency down to about 20 kHz when the load current is nearly zero VSFF maximizes the efficiency throughout the load range Incorporating protection features for rugged operation it is furthermore ideal in systems where cost effectiveness reliability low stand by power Table 1 ELECTRICAL SPECIFICATIONS Description Input Voltage Range ON Semiconductor www onsemi com EVAL BOARD USER S MANUAL and high efficiency are the key requirements Extremely slim the NCP1602 evaluation board is designed to be less than 13 mm high This low profile PFC Stage is intended to deliver 160 W under a 390 V output voltage from a wide mains input This is a PFC boost converter as used in flat TVs high power LED street light power supplies and all in one computer supplies The evaluation board embeds the NCP1602 AEA version which is powered by an external Vcc With the help of an external dc source apply a Vcc voltage that exceeds the NCP1602 AEA
9. arious Various istor 1800 kQ 196 1 4 W SMD 1206 Various Various R39 1 Resistor R37 1 Resistor Resistor 80 mQ Through Hole LVRO3RO800FE12 R1 R2 2 X2 Capacitor 1000 kQ 1 500 V SMD 1206 Various Various Discharge Resistors www onsemi com 13 A A A A A A A A A A A A A A A N N N N N N N N N N N N N N N N N N N R40 1 Resistor N A C30 1 Capacitor N A D6 1 Diode N A N A A A A A A A A A A A A A A A A 3W NCP1602GEVB Table 3 NCP1602GEVB BILL OF MATERIALS continued ras om zem voue L eps Sne um NI Reference Qty Description Value Constraints Number me 3 mew ma RE sume mees Leer PFC Controller NCP1602 AEA TSOP6 ON Semiconductor NCP1602 AEA RTH1 1 Inrush Current Limiter B57153S150M 1 8 A max Through Hole EPCOS B57153S0150M000 1 4 A Fuse 4A 250V 250 V Through Hole Multicomp MCPEP 4 A 250 V Heatsink KL 195 0 COLUMBIA STAVER TP207ST 120 12 5 NA SP 03 REFERENCES 1 5 Key Steps to Designing a Compact 3 NCP1602 Evaluation Board User s Manual High Efficiency PFC Stage Using The NCP1602 https cma onsemi com pub link Collateral EVBU Application note AND9218 D M2302 D PDF http www onsemi com pub link Collateral AND9218 D PDF 2 Data Sheet NCP1602 D http www onsemi com pub link Collateral NCP1602 D PDF www onsemi com 14 NCP1602GEVB ANNEX Schematic amp
10. e is called discontinuous conduction mode DCM or Frequency Foldback and the main waveforms are depicted in Figure 5 This delay is maximum when Verri reached is 0 5 V minimum value When the 0 5 V Verri minimum value is Measure 20 0 Vidiv 71 800 V 100 V i 197 00 V 100 Vidiv 197 0 V ofst 100 mv div 101 0 mv reached the circuit works in a so called Static OVP mode for no SKIP mode options like AEA option used on this board by skipping cycles based on the difference voltage between Verri and 0 5 V This static OVP mode offers a very low output ripple voltage unlike the classical SKIP mode of other options The added dead time starts at the end of the boost inductor demagnetization cycle and ends at the on time start which is synchronized with the boost inductor Zero crossing valley turn on event In all cases the circuit turns on in a drain source voltage valley e Classical Valley Turn On in CrM Operation e At the First Valley Following the Completion of the Dead Time Generated by the VSFF Function to Reduce the Frequency One can also note that the switching frequency being less when the load current is low the frequency is particularly low at light load high line On the other hand CrM operation being more likely to occur at heavy load low line Refer to the data sheet for a detailed explanation of the VSFF operation and of its implementation in the NCP1602 2 Tbase 5 52 US Declench Os 2 0
11. hen the PFC stage is plugged in The NTC is placed in series with the boost diode This location is rather optimum in term of efficiency since it is in the in rush current path at a place where the rms current is less compared to the input side However this component still consumes some power That is why the efficiency is given with a shorted NTC to approximately improve the power efficiency value by 1 percent NCP1602 Power Efficiency vs VyAiNs 8 Output Power 99 00 98 00 97 00 96 00 95 00 94 00 93 00 Power Efficiency 96 92 00 91 00 Pow Eff 265 V rms Pow Eff 230 V rms Pow Eff 110 V rms Pow EI 90 V rms 90 00 0 10 20 30 40 50 60 70 80 290 100 Percent Of Max Output Power Figure 8 Evaluation Board Power Efficiency vs Output Power NTC is Shorted 100 Output Power Corresponds to 160 W Figure 8 displays the efficiency versus load at different line levels When considering efficiency versus load we generally think of the traditional bell shaped curves Atlow line the efficiency peaks somewhere at a medium load and declines at full load as a result of the conduction losses and at light load due to the switching losses Athigh line the conduction losses being less critical efficiency is maximal at or near the maximum load point and decays when the power demand diminishe
12. ng this long demagnetization Measure P2 duty C1 100v 100 L 4024V fT 37889V f 1 00 V 1 87 V 2 571 ATI 2 663V f 200 mv 606 mv 100V 345us 4024V 379 9V f 20 0 V 79 24 73mV 1019411 127 mV ip 408 mV if 1 00 V 345 us 2 571 V 1 2 663 V if period continuous conduction mode CCM can occur for a few cycles The NCP1602 incorporates a second over current comparator that trips whenever the MOSFET current happens to exceed 150 of its maximum level Such an event can happen when a the watchdog restarts a cycle as explained before b if the current slope is so sharp that the main over current comparator cannot prevent the current from exceeding this second level as the result of the inductor saturation for instance In this case the circuit detects an overstress situation and disables the driver for an 800 us delay This long delay leads to a very low duty ratio operation to dramatically limit the risk of overheating Figure 13 illustrates the operation while the bypass diode and the NTC are both shorted Vmarms 110 V with a 400 mA load current the NCP1602 being supplied by a 20 V external power source When the bypass diode is shorted the demagnetization of the inductor takes too much time and the 200 us Watchdog timer helps to start a new on time during which the OCP limit is reached Because the previous demag was not reached and OCP is triggered a 800 us timer is used before allowing to sta
13. r Capacitor 02 47 kQ Resis Resis Resis 2 2 kQ Resis 00 Resis 80 MQ 1 1 4 VV SMD 1206 A A A N N N NA EN 96 1 4 VV 1 10 1 4 VV 196 25 V SMD 1206 SMD 1206 SMD 1206 SOD123 SMD 1206 SMD 1206 SMD 1206 SMD 1206 SMD 1206 SMD 1206 N N N N 96 1 4 VV 96 1 4 VV 190 1 4 VV 190 1 4 VV 1 3 W Through Hole NA NA NA Various Vishay Various E gt z ziz gt gt gt Various Various Various MMSD4148T1G Various Various Various Various Various Various LVRO3RO800FE12 9 R3 1 R1 R2 2 X2 Capacitor 1000 kQ Discharge Resistors 196 500 V SMD 1206 1 1 4 VV 10 1 4 VV SMD 1206 SMD 1206 www onsemi com 16 Various Various Various Various Various Various NCP1602GEVB Table 4 NCP1602GEVB BILL OF MATERIALS FOR ZCD DETECTION USING AUXILIARY WINDING Vaux continued Tolerance Part Reference Qty Description Value Constraints Number U2 PFC Controller NCP1602 AEA TSOP6 ON Semiconductor NCP1602 AEA RTH1 EM Inrush Current Limiter B571538150M Through Hole EPCOS B57153S0150M000 F1 4 A Fuse 4A 250V 250 V Through Hole Multicomp MCPEP 4 A 250 V HS1 Heatsink KL 195 RES zl t l COLUMBIA STAVER TP207ST 120 12 5 NA SP 03 ON Semiconductor and the W are registered trademarks of Semiconductor Components Industries LLC SCILLC or its subsidiaries in the United States and or other countries SC
14. rt a new on time This helps limit the current resulting from the shorting of the bypass diode and the very low duty ratio prevents the application from heating up 800 us OVS Timer i I i i Thase 60 4 maD clench FEB 20 0 V 20 0 ms div Arr ter 566 mi 345 ys 10 0 MS MS s Edge Positive 10 19 V 2 54 y 9 E 408 mv 97 70 200 mv 345 us 73mV 127 mif Figure 13 From Steady Stage the Bypass Diode is Shorted A Vmains 110 V rms Fans 60 Hz lj oAp 400 mA NTC Shorted CAUTION Please note that we do not guarantee that the a NCP1602 driven PFC stage necessarily passes all the safety tests and in particular the boost diode short one since the performance can vary with respect to the application or conditions The reported tests are intended to illustrate the typical behavior of the part in one particular application highlighting the protections helping pass the safety tests The reported tests were made at 25 C ambient temperature www onsemi com 12 NCP1602GEVB BILL OF MATERIALS Table 3 NCP1602GEVB BILL OF MATERIALS Tolerance Part Reference Description Constraints Footprint Manufacturer Number C1 C2 Y Capacitors 400 V Through Ho CD70ZU2GA102MYNKA TDK X2 Capacitors 305 V ac Through H EPCOS B32922C3224K Filtering Capacitors Through Hol B32592N6474K Hole i z z Power MOSFET IPA50R250CP 550 V TO220_C Infineon IPASOR250CP Resistor 680 kQ 196 1 4 W SMD 1206 V
15. s because the increasing impact of the switching losses Curves of Figure 8 meet this behavior in the right hand side where our demo board resembles a traditional CrM PFC stage In the left hand side the efficiency normally drops because of the switching losses until an inflection point where it rises up again as a result of the VSFF operation As previously stated VSFF makes the switching frequency decay linearly as a function of Verri voltage load current when it goes below a preset level PF and THD Performance Were Measured by Means of a CHROMA 66202 Digital Power Meter Figure 9 and Figure 10 show that VSFF exhibits very similar PF ratios compared to those obtained with CrM traditional operation VSFF improves the THD performance at light load We can see on Figure 10 a 596 decrease of THD value when switching from CrM mode to DCM mode This behavior is due to the fact that in CrM close to mains voltage Zero crossing there is a zone of zero mains current which leads to a slight mains current distortion higher THD When entering DCM as a dead time is added the inductor peak current gets higher and the zero mains current region becomes narrower leading to a 5 decrease of the THD value www onsemi com 8 NCP1602GEVB NCP1602 PF W VA vs Vmains amp Output Power 0 9 0 8 PF no unit 0 7 PF 265 Vrms PF 230 Vrms ee PF 110 Vrms lt PF 90 V rms 0 6
16. semi com 11 NCP1602GEVB BEHAVIOR UNDER FAILURE SITUATIONS Elements of the PFC stage can be accidently shorted badly soldered or damaged as a result of manufacturing incidents of an excessive operating stress or of other troubles In particular adjacent pins of controllers can be shorted a pin grounded or badly connected It is often required that such open short situations do not cause fire smoke nor loud noise The NCP1602 integrates functions that help meet this requirement for instance in case of an improper pin connection including GND or of a short of the boost or bypass diode As an example we will illustrate here the circuit operation when the PFC bypass diode is shorted When the PFC stage is plugged in a large in rush current takes place that charges the bulk capacitor to the line peak voltage Traditionally a bypass diode D in the application schematic of Figure 2 is placed between the input and output high voltage rails to divert this inrush current from the inductor and boost diode When it is shorted the bulk voltage being equal to the input voltage the inductor slightly demagnetizes owing to the boost diode voltage drop As this voltage is small the demagnetization can be extremely long This is generally far insufficient to prevent a cycle by cycle cumulative rise of the inductor current and an unsafe heating of the inductor the MOSFET and the boost diode As the internal 1602 watchdog may kick in duri
17. start up level 18 2 V max to ensure the circuit starts operating The Vcc operating range is from 9 5 V up to 30 V Value 90 265 Line Frequency Range Maximum Output Power Minimum Output Load Current s Number of Outputs Nominal Output Voltage Maximum Start Up Time No Load Power 115 V rms Target Efficiency at Full Load 115 V rms Load Conditions for Efficiency Measurements 10 2095 Minimum Efficiency at 2096 Load 115 V rms Minimum PF over the Line Range at Full Load Hold Up Time the Output Voltage Remaining above 300 V Peak to Peak Low Frequency Output Ripple 45 to 66 160 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions unless otherwise noted Product performance may not be indicated by the Electrical Characteristics if operated under different conditions Semiconductor Components Industries LLC 2015 June 2015 Rev 0 Publication Order Number EVBUM2302 D NCP1602GEVB THE BOARD IN Semi onductT Figure 1 A Slim Board Height lt 13 mm www onsemi com 2 NCP1602GEVB MOSA ANA A Uep xne A M NOGISESI254 Hg OGCHOSYdI L OGGHNN La lt 90YSN I ca e91n0S J MOd DDA leux 10 8490S 8PLYNIL d A 004 du Occ ago O NIA edAL 4u 022 CX A dAL Ju 19 S
18. uu A 992 98 LA DI 9 9 geo BE des Ecs D HNO O A 00 au Occ 90vng9 ego In OW cd lon Power Sect 2 Application Schematic Figure www onsemi com NCP1602GEVB THL2A ICH 6 0081 org OM Ove 60 ved OA 0081 6H O Le LUH Figure 3 Application Schematic Control Section www onsemi com NCP1602GEVB VSFF OPERATION The NCP1602 operates in so called Valley Synchronized Frequency Fold back VSFF where the circuit works in Critical conduction Mode CrM when the load current is medium to high Verri pin voltage medium or high The load current is correlated with the Verri pin voltage see Table 2 Verri 4 5 V corresponds to the maximum current capability which in our case is not reached because we limit the application to 160 W and 0 5 V corresponds to zero load current When VCTRL pin voltage is lower than a preset level the switching frequency linearly decays to about 20 kHz VSFF maximizes the efficiency at both nominal and light loads In particular stand by losses are minimized When VCTRL pin voltage Verri exceeds VCTRL DT voltage VCTRLDT 1 553 V for the AEA option the circuit operates in CrM typical CrM waveforms are depicted in Figure 4 If Verri is below VcrRI pr the circuit forces a delay or dead time before re starting a DRV cycle which is proportional to the difference between VCTRL DT reference and Verri voltage This mod
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