sheet E 110A
Contents
1. a value which is kept constant during one minute Alcatel Vacuum Technology France AMS 200 User s manual 5 52. ams01447 doc Edition 03 May 06 E 110A Dry plasma chamber cleaning Preliminary condition e Once a cleaning procedure has been requested and the machine has completed all the etching processes you can start a dry plasma cleaning procedure Tools required e Oxygen gas supplied to the O2 gas line of the machine e Optional an optical emission spectroscopic system e Dummy Si water Select a plasma cleaning process in the process library Inthe System screen click on the Edition icon Check if a plasma cleaning process is already existing in the process library a If yes go directly to 4 m f no you must create a plasma cleaning process Go to 2 Alcatel Vacuum Technology France AMS 200 User s manual 1 5 ams01447 doc Edition 03 May 06 E 110A Dry plasma chamber cleaning Create the cleaning steps If the plasma cleaning process is not already existing you must create it The cleaning process includes a heating step m a process step To create the heating step proceed as follows Select the Process library tab in the Process Edition screen Click on the New button in the step library area Enter a name possibly together with a comment for the heating step Select the Chuck temp control option Click OK Inthe Step edition screen specify the following parameters wafer temperature 20 C duration unlimite
3. d He pressure 1 0 E1 mbar Alcatel Vacuum Technology France AMS 200 User s manual 2 5 ams01447 doc Edition 03 May 06 E 110A Dry plasma chamber cleaning To create the process step proceed as follows Select the Process library tab in the Process Edition screen Click on the New button in the step library area Enter a name possibly together with a comment for the process step Select the Process option Click OK Inthe Step edition screen specify the following parameters 2 mode ramp O2 flow 200 sccm A B 200 C De Regulation mode position Pressure 100 Source 2000 W Chuck P option selected Chuck depending on the machine configuration He pressure 1 0 E1 mbar Process duration this time depends on the degree of deposit to be cleaned This time is unknown before processing so set this time to 30 min Machine configuration Chuck RF generator LF generator XMB ESC Pulsed Not pulsed 100 W SOW 50 W 8 W Alcatel Vacuum Technology France AMS 200 User s manual 3 5 ams01447 doc Edition 03 May 06 E 110A Dry plasma chamber cleaning Create the plasma cleaning process Create the plasma cleaning process Click on the New button in the process library area Enter a name possibly together with a comment for your cleaning process Add both steps
4. previously created 4 Place a dummy wafer in the cassette Place the dummy wafer in the slot 1 of the cassette Start the plasma cleaning process Go back to the System screen Inthe System screen click on the Process icon In the Run process screen select Multiple process mode in the wafer 1 line select the plasma cleaning process previously created click GO Alcatel Vacuum Technology France AMS 200 User s manual 4 5 ams01447 doc Edition 03 May 06 E 110A Dry plasma chamber cleaning Check the end of the plasma cleaning process The criteria to end the plasma cleaning process are based on the fact that during the process the oxygen will react with the CF containing polymer to produce CO and F species While the polymers are removed the pressure decreases until all polymers are removed Then the process pressure will reach a minimum value One consider that the process chamber is clean when the process pressure has decreased to a value which is kept constant during one minute If after 30 minutes the cleaning criteria has not been completed repeat the whole cleaning procedure Optical emission spectroscopy optimal Select an OES positioned on 298 8 mm CO line EPD with the cleaning step edition and track the intensity during the cleaning process One consider that the process chamber is clean when the CO line intensity has decreased to
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