ECN33101 SP/SPV/SPR (PDF形式、326kバイト)
Contents
1. 7 9 260 10 IC 7 10 I C 8 12. 2 1 1 3 1 4
3. 1 2 3 4
4. 7 7 HITACHI PDJ 33101 0 1C SP 09014 R1 lt 2 gt ECN33101SP SPV SPR 7 8 P 11715
5. P 2 15 1 3 1 3 1 ECN33101 15VVec Dp Yp 5 7 Gi ls 2 c VCC Vs Wp 5V CK l GOCK 6 Pa 8 0 np Hf 15V_VCC Vref GHW 3 Rs 1 3 1 1 4 ECN33101SP ECN33101SPV ECN33101SPR SP 23TA SP 23TB SP 23TR 1 4 1 ECN33101 HITACHI PDJ 33101 0 1C SP 09014 R1 lt gt i P 3 15 ECN33101SP SPV SPR 2 2 1 2 1 1 Ta 25 C 15V_VCC VCPM 15V_VCC IVC VCPM VIN UL VI WI i 6 1 T 25C IC 2 1 Rjc 4C W 2
6. 7 3 No 1 2 2 3 3 4 4 5 6 7 8 9 9 10 18 20 20 21 21 22 7 4 IC C 7 5 7 6
7. Web http www hitachi power semiconductor device co jp
8. 5 6 o 7
9. 1 5 6 7 8 a b
10. iGL 5 6kQ 5 UI VI WI CK 470pF 20 VOFF 0 01gF 20 HITACHI PDJ 33101 0 1C SP 09014 R1 lt 2 gt P 9 15 ECN33101SP SPV SPR 4 23 GHV 22 GHU 21 VS1 20 MU 19 NC 18 WI 17 VI 16 UI 14F 13 VOFF 12 CK 11 RS 10 CB 9 CL 7 C 6 GL 5 VCC 4 MW 3 6GHM 2 VS2 1 MV 4 1 5 5 1 V V W IGBT 3 GHW W IGBT FWD 4 MW W 5 VCC 6 GL 8 CGC 9 cL
11. HITACHI PDJ 33101 0 1C SP 09014 R1 lt 2 gt ECN33101SP SPV SPR P 12 15 1 1 1 Tj 135 C lt 0 185 V 1 1 2 a T 110 b VS 185V 3 VCC VS CK VOFF H VOFF L CK VS VCC 4 1 50ms VOF
12. ULVLWI L OFF ON P 6 15 ER OR ALL OFF H WVILW 2 4 2 1IC 3 UI VI WI 6 IGBT 50 50 UI VI WI 80 20 MU CNV MW NN 20 80 8 1 1 T t lt gt lt UM iTdOFFT TdONT i TdONB 0 a3 TDT 1 TDB 2 4 2 1 2 4 3 VOFF L IGBT VOFF H UI VI WI RS 6 seem ef 0 IGBT itaoff 2 4 3 1 taoff HITACHI PDJ 33101 0 1C SP 09014 R1 ECN33101SP SPV SPR 2 4 4 IC RS Vref typ 0 5V IGBT L VOFF
13. SH SO A 2 3
14. 0 39 0 78N m 7 2 a IC 1IC b 1C c 1IC 100kQ 1M 9d e 1C f 45 75
15. Rja 40 C W HITACHI PDJ 33101 0 IC SP 09014 R1 lt 2 gt P 4 15 ECN33101SP SPV SPR 2 2 B 2 2 1 Ta 25 C VOFF 0OV CK OV VS 141V VCC 15V IB 0A 0 3 0 V VS 141V VCC 15V I 0 7A 1 w SN ke lt lt ISH ONT ONB TdONT dONB TdOFFT dOFFB DD DD EE gg mg oo oo U MV MW U MV MW 0 0 TOT VS 141V VCC 15V I 0 7A s 1 DB FDT 1 0 7A 0 5 0 Tref RS 40 60 wsNCCi5V VCC 15V VIL VOFF GK IIL UI VI W gA 0V lee 1 100 Al 4 5V ee 3 IB 45 IVCCG15W 0 WW 1 1 1 1 F Fault
16. 1 IO C8 11 RS Fault 15 ER ECN39100 16 UI U V 18 WI W 19 NC U U 1 GBT U IGBT FWD V IGBT FWD 1 1 2 1 1 2 1 1 1 2 2 co 1 2 VS1 VS2 C 1C VS1 VS2 3 HITACHI PDJ 33101 0 1C SP 09014 R1 lt 2 gt ECN33101SP SPV SPR 6 Ta 25 5C P 10 15 7 7 1
17. L F Faul t tflrs H VOFF L Fault VOFF H 15V_VCC NM UI VI WI N VOFF NN P 7 15 1 ref EEIEsS 2 4 4 1 Tref tflrs 2 4 5 15V_VCC 15V_VCC LVSD LVSDON IGBT VCC LVSD LVSDOFF 2 4 6 VOFF CK L 2 4 7 CK H VB L OV Duty 50 HITACHI PDJ 33101 0 1C SP 09014 R1 lt
18. tflrs 2 typ 200kQ 2 2 1 3 typ 200kQ 2 2 2 4 LVSD 15V_VCC 5 2 2 3 on rT J ET ae olo LVSDON 11 1 7 12 5 4 I 1 us VCC 15V hoOIhOIhOTI OSI hhOTIFTOT TO1 2 3 2 3 1 3 Fck CK 4 PWM Fpwm UI VI WI 5 GH Vgh GHU GHV GHW GL HITACHI PDJ 33101 0 1C SP 09014 R1 P 5715 ECN33101SP SPV SPR 2 2 1 UI VI WI CK VOFF VB typ 200k RS WW typ 300 2 2 2 RS VB F 2 2 3 F HITACHI PDJ 33101 0 1C SP 09014 R1 lt 2 gt ECN33101SP SPV SPR 2 4 2 4 1 2 4 1 1
19. gt ECN33101SP SPV SPR P 14 15 SPR 30 0 31 0 MAX 28 00 3 SP 23TR 5 4 1 0 3 3 6 0 2 11 2 0 3 12 33 0 45 10 25 R 0 40 1 __ 1 80 0 25 1 23 0 25 1 27 6 0 amp 23 97 0 30 2 20 0 35 4 2 SPR HITACHI PDJ 33101 0 1C SP 09014 R1 P 15 15 I C
20. lt gt 1 C ECN33101SP SPV SPR 1 1 1 1 IC U V W 3 2 IC 3 6 3 IGBT Insulated Gate Bipolar Transistor U V WI 3 4 AC100 115V IC 250V 1 4A 5 P 1715 2 1 3 2 3 3 4 5 Fault 6 7 5V 8 9 15_VCC HITACHI PDJ 33101 0 1C SP 09014 R1
21. P 8 15 ECN33101SP SPV SPR 3 3 1 1 A 20 VB VB 5 5V 1 0uF 20 15V_VCC 400V 1 0A trr 100ns 1 1 I10 Vref Rs A 15V_Vec _ ZZ VCC Vs typ 5V CK I CLOCK 6 7 0 Dn NT NT A ALL OFF 15V VCC hd Vref GHW 3 1 1 ECN33101 3 2 UI VI WI VOFF CK
22. VOFF 3 1 3 2 HITACHI PDJ 33101 0 1C SP 09014 R1 lt 2 gt ECN33101SP SPV SPR 4 P 13715 30 0 31 0 MAX SP 28 0 0 3 20 0 0 2 SP 23TA 4 1 0 3 3 6 0 2 11 2 0 3 12 33 0 45 1 23 0 25 3 1 80 0 25 2 2 0 5 23 97 0 30 SPV 30 0 31 0 MAX SP 23TB 28 0 9 3 20 0 0 2 1 0 3 ha02 17 3 MAX 13 5 0 5 0 25 9 8 0 6 0 1 1 1 230 25 23 97 0 30 0 925 0 250 _1 275 0 250 4 1 SP SPV HITACHI PDJ 33101 0 1C SP 09014 R1 lt 2
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