チョクラルスキー法によるすずの結晶成長実験
Contents
1. 7 0 1K 102. 12 0mm h a be Pulling up Speed 10 20 30 140 Crystal length mm Molten tin temp K Time h Fig 4 Experimental run A 4 mm 1 5 5 518 6K 13 5K
3. A NN gt QOElectric furnace Seed Crucible Thermocouple oPulling rod Crystal glass cylinder Thermocouple Fig 2 Schematics of the apparatus Table 1 Properties of tin Item Phy properties Melting point K 505 1 Density g cu 8 682K 6 Theraal conductivity W mk 3 3 513K Expansion coefficient 1 K Viscosity Pa 1 9X 10 513K Specific heat kg 2 4 3 523K 152 7 2 1993 Table 2 Composition of tin employed 4 4 1
4. Cz 5 12 15 2 EP 5R K1 1 1
5. 160mm 3 4 2 lt 20K 2 mm 513 2K 8 1K 7 mm
6. 4 40 80 120 160 Crystal length mm Pulling up Speed mm h Molten tin temp K 0 1 2 3 4 Time h 8 9 10 1 12 Fig 8 Experimental run E 4 3 15 4 7 A D Table 3 Detailed results of each run Molten tin teamp control Tin rod weight Min tin rod diameter aun Growing time h 0 8 L sk xs x lt PB 5 YE 6 1 57 ie retatime rate to re 1 sp io io ie GO PO Ph CRT TT ceo 428 ie 1 so ie is Molten tin temp erature range 507 6 506 6 505 8 507 1 507 5 durin amp pulling up eXP K 509 4 507 6 511 0 507 3 507 7 156
7. 4 0h 10mm 4 0 5 3K 4 Cz
8. 503 2K 0 5mm K 3 Cz Location of cructble center mm 310 320 330 340 550 360 Temperature K fig 3 Measured temperature profile in a vertical direction
9. 516 8K 0 43h 2 mm 0 58h 3 mm 3 1 15h 20r pm 10rpm 1 57h 5r p m 7K 12mm
10. _ 7 D 8 E 7 D 7 8 E D E 0 7 E 3 0mm D 4 3mm 3
11. 10mm h 1 85h 7 mm 2 82h 4K 2 99h 5 mm 3 18h 16 14 12 10 8 on m 0 10 20 30 40 50 Crystal length mm Pulling up speed mm h Molten tin temp K Time h Fig 5 Experimental run B 6 488 2K 4 mm 518 7K 1 02h 12 0mm h 10mm 512 2K 507 8K 15
12. 7 2 993 10mm h 1 39h 13 5mm h 8 02h 1 2K N 20 on wn 40 80 120 160 Crystal length mm Pulling up speed mnyh 520 510 Moiten tin temp K 500 0 1 2 3 4 5 6 7 8 Time h Fig 6 Experimental run O
13. 4 mm 516 K 10 9K 507K NM on Pulling up Speed mmh 40 60 80 100 120 Crystal length mm CO1 9 510 Molten tin temp K 500 9 1 2 3 4 5 6 7 Time h Fig 7 Experimental run D 8 507 6K 155 8 51 7 9mm 12 6mm
14. 7 2 pp 151 157 1993 lt Crystallhization Experiment of Molten Tin by a Czochralski Method Mitsuo IWAMOTO Keiji TOH Katsuhide AIKAWA and Hiroyuki OZOE The semiconducting materials such as silicon and gallium arsenide have been widely employed for manufacturing integrated circuits The crystallization process has been established as a CZzochralski process but its operating procedure and a crystal rod pulling process have not been totally clarified Herein we report the solidification results of tin from molten metal in a miniature Czochralski crystallization apparatus The most important factor to get a crystal rod was found to control the molten temperature at an appropriate value As a result we got a tin rod of 19mm diameter 109mm 1ong and 121g weight 1 Cz
15. 7 2 1993 Table 4 Dimensionless values of molten tin for each run 8 E XX 5 1 0
16. Pt PtRd Fig 1 Pulling apparatus 3 1685K 1 99 85 2 Cz
17. PID 2 70mm 210mm 35mm 47 5mm 2 5mm 0 50r p m 0 14mm h 50mm 151 55mm
18. 1K 2 3 B NO 000 enelh 0 0 1 5x 10 4 7x105 2 9x105 1 4x 105 5 0x 105 2 1x 103 6 7X 103 4 1x 103 2 0x 103 1 0x 103 i te GA al 5 9x 10 1 4x 102 3 1X 10 5 9x 10 1 01850050 a g acceleration due to gravity 9 81 m s2 Gr Grashof number gg Ty Te h wv h height of liquid level in a crucible ml R radius of a crystal rod m Pr Prandtl number of fluid v a Re Reynolds number RQ
19. v T melting temperature of tin K T temperature of molten tin K ge thermal diffusivity of fluid Lm2 s volumetric coefficient of expansion 1 K kinematic viscosity of fluid mz2 s Q rotational rate of a crystal rod rad s 1 1989 2 1961 3 1990 4 5 Ct oo
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