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Contents
1.2. hi EA
3. 92 6 1 3 6 2
4. 4 AFM
5. 30 wt SEM 6 8 SEM
6. 0 8000 rpm
7. FE 1500 8000 rpm C Liquid Glass G type
8. A B B A B MN DE A A
9. Si 100 um a Ree we Si uc Si H Si a Si H Si 1 100 Si Ne NN ON Si
10. TCO 7Max 7uw 4 8n 64n2 0 7Avg 1 7 2 7Avg 1 7 6 Z4vg 7MAx Tum
11. 1 ON Ea E 2 Be 1 3 1 Si
12. X Qour in RA 4 25 55 pyi
13. 4 1 1 a Il
14. 18 1 nm NP TiO gt b NP TiO gt RMS 10 Inm NP ZnO E NP TiO NP TCO SEM NP TiO gt 2400 nm f j 5 22 2400 nm NP TiO gt 33 nml
15. up 4 10 2 Si 2 1 pn a b c 9 2 1 2 2 2 2 2 2
16. X X H ay X XRD X X X 4 15
17. 8
18. _ Ma nNg ka kp na np ka kp 2 0 AB 0 1 5 1 0 4 7 1 2 Anti Reflection AR AR
19. TCO 2000 700 nm sc 15 TCO 7 152 1 20 nm 44 900 nm 82 TCO
20. 4 3 a Qsonica Q500 4 3b
21. H2 Os SiH4 sis 0 _SiH3 4 A A or wm ON NN mm Zn 2 4 7 Si 39 4 7 4 3 3 Hot Wire CVD Hot Wire CVD 3 1 4 Catalytic CVD Cat CVD ECVD P Hot Wire CVD
22. TCO SRM 006 pnd 1 pp 241 278 1992 2 QA 2012 3 pp 63 109 2001 4 Y Mishima Jpn J Appl Phys 22 L46 1983 5 T Saito Appl Phys Lett 42 678 1983 6 H Matsumura J Non Cryst Solids 97 98 1379 1987 7 8 9 7 W E Spear P G LeComber Solid State Commun 17 1193 1975 8 S Y Myong
23. 4000 AZO SSP uc SiH LG 6 12 LG AZO AZO LG
24. LG AZO 95 6 6 4 f H j
25. 1 2 2 A
26. 44 34 Ei 3 CDM 70 C NO 200 650 C 4 2 2 TCO
27. van der Waals van der Waals DLVO van der Waals 4 1
28. Il 18 AM 1 5 spectrum mW cm pm 2 Si 180 1x i 9 13 11 mAlcm 140 120 100 80 60 40 20 700 800 Wavelength nm 400 500 600 900 TT 10 x 19 87 mA cm 52 1100 1000 1200 b 180 T T T T T T T T T T T T T T T 160 z E 14 87 mAlcm 140 amp 120 E 100 E 80 o 8 60 40 lt 20 0 400 500 600 700 800 900 1000 1100 1200 Wavelength nm 2 7 a a Si H 300 nm b unc Si H 1 0 pm Si i 10 nN
29. E 76birr 7Arr 4 9 a b 32 TCO
30. i TT Voc FF TCO gc Ss WWM ML cs lt We ma Lao TCO
31. NP TCO 93 Asahi VU NP ZnO NP ZnO NP TiO gt NP TCO Ss S 1
32. V 0 1 2 4 2 3 32 van der Waals
33. 8000 rpm 1 LG GLG 330 800 nm 70 300 C GLG 300 CC GLG 5 4 400 nm GLG
34. b NP ZnO 5 5 a NP ZnO SEM AFM RMS SEM 30k k NP ZnO i 2 NP ZnO A EO ul 5 5s a SEM 5 5 b NP ZnO
35. 4 1 2 1 4 4
36. d 70 C 2 e RF 4 1 1 93 2 450 C LG AZO TCO AZO 6
37. E X X X m F A 0 1 nml XRD X
38. AZO SSP 105 6 gt 8 10 8 5 19 5 0 20 15 5 2 10 5 E el 10 0 E G amp G 103 gt 8 10 20 25 30 35 40 45 50 Cover ratio 6 12 AZO SSP AZO
39. 100 80 60 40 Transmittance 20 500 1000 1500 2000 2500 Wavelength nm 5 6 1100 nm NP ZnO 62 5 100 Thickness 80 3760 nm 2930 nm S 2080 nm 60 1570 nm 1330 nm gt 1030 nm 8 40 G 20 i 6 A A AAAAnA 400 500 600 700 800 900 1000 1100 1200 Wavelength nm gt oO N 0 1000 2000 3000 4000 Thickness nm s 7 a NP ZnO 550 Inm NP ZnO 5 3 2 5 3 1 NP ZnO NP ZnO
40. SEM E f 47 AFM j 4 H 4 12 AFM 4 4 12
41. E 7ArL 7prrr 0 ul 44 Haze value A Z4rr 7prrr NH _ 7p7pr H i HH Tarz 4 x100 4 10
42. 2013 74 2013 9 16 20 18p A4 2 5 2013 11 14 15 P2 7 TH mm mm Y cp
43. Si 5 1 TEM 1 4 Si Si Si uc SiH Si 120 9 V i 2 Si Voc FF 2 1 5
44. 10 Qcm2 14 2 Si TT 2 2 Si 2 2 1 pin Si Si pn a SiiH uc Si H pn p n Gntrinsic i pin 2 5 n p
45. 6 22 6 23 LG 623 b LG NR i LG I pc Si H Si SE 500 700 nm Le 2 NE ER uc Si H 500 700 nm
46. 7 3 a LG 7 3 b 6 LG 132 7 LG
47. 7 3 a b LG 131 7 3 Reflectance Reflectance 7 ds 400 500 600 700 800 Wavelength nm k ratio 6 Ww lt Void ratio 400 500 600 700 800 Wavelength nm LG a b 2
48. 6 0 Osc 16 2 mA cm2 4000 rpm oc 0 50 V FF 0 74 H LG CY es 2 AZO Si 119 6 8000 rpm w 4000 rpm 2000 rpm Flat AZO Reflectance 400 600 800 1000 1200
49. 2 4a 1 Qcm2 2 Si TT 0 0 2 0 4 0 6 0 8 1 1 2 2 4 a b 2 4b
50. nc SiH 1 um a 14 21 H 12 17 18 20 or A TCO 3
51. 9 x107 GW 106 GW 1 CS H EN 1884 Se B 1
52. LG 1 a AZO LG AZO LG L AZO AZO G E LG AZO AZO SSP
53. Xe YSS S0A LabVIEW 54 ADVANTEST DC Voltage Current Source Monitor R6243 4 mm AM 1 5 100 mW cm 25 gt C 4 9 2 19
54. lt lt lt lt gt UHF XXX et Cc gt lt PR OO gt 61 TCO 6 3 AZO LG AZO LG AZO LG 8000 rpm Eagle XG Corning AZO 1200 nm 6 2 LG AZO 6 1 Nt
55. 100 nm 5 2 5 3 TCO 30 nm ZnO NP ZnO 2
56. GLG LG Reflectance 500 C 400 C 350 C 300 C Eagle XG 400 500 600 700 800 Wavelength nm 7 12 LG GLG 8000 rpm 141 7 LG 7 3
57. ye 2 Si 3 Si Si 4 Si i
58. ml NN 5
59. NP ZnO NP TiO gt 2 stacked F NP TiO gt stacked NP RMS 32 nm TCO 18 nm stacked NP TCO NP TiO gt a EF TCO AZO stacked NP TCO a Si H AZO Asahi VU
60. 45 RF 36 Ei 4 1 7 ED RR wt Pal W C nm min AZO ZnO AbOs 10 0 5 100 400 20 0 ITO In203 SnO gt 10 0 0 5 100 150 10 0 3 ITO In203 SnO gt 10 0 0 7 100 RT 7 0 Ag Ag 1 0 50 RT 16 0 4 3 Si 3 a SiiH pe Si H a Si H Si pc Si H
61. 3 1 Van der Pauw 51 4 8 X 4 8 1 X XRD 1 x diffraction XRD Rg 4 20 kn p TCO
62. NP NP ZnO ZnO 30 nm 180 nm F 67 3 nm 31 9 nm 30 nm NP ZnO 60 8 1 RMS 5 Thickness u
63. Si 3 pin i 10 cm i p n p n dead layer Si
64. 1000 nm 1000 nm AZO E uc Si H LG ii uc Si H 77 0 08 3 109
65. 2 5 Si pin 15 2 2 2 2 Si Un a SiH pc Si H Si a SiiH uc Si H a Si H a Si H 10 at 4
66. AZO SSP AZO LG 400 1200 nm 50 1000 nm 70 AZO SSP 6 6 6 5 AZO SSP AZO LG LG
67. 2 1 2 1 1 pn 1 pn pn negative n positive p Si n p B n p 2 1 a d pn
68. ZnO 002 AZO ei 62 LG AZO 80 AZO LG AZO 6 28 x 10 Qcm 3 59 x 1020 cm3 27 7 cm2Vs AZO 6 47 x 10 Qcm 3 36 x 10 cm3 28 7 cm2Vs LG AZO
69. J XX 2 5 X 27sin0 mA 27sin 52 4 21 X X 4 1 4 8 2 mm 171 4 X
70. 30 41 647 7 e 2kd 4 1 eY 2 1 zeW Y 1 kT mo x
71. 10 MesF 87 mg L 18 C CAS 7783 40 6 MgF gt SiO MgF SiO SiO
72. Eagle XG 7 5 3 7 5 2 LG 7 19 a VULG 1 Asahi VU LG 300 C 4000 rpm LG 350 nm GLG LG Asahi VU
73. 7 Staebler Wronski 4 a SiH 5 c Si 1 8 eV c Si 1 1
74. SmartLab 4 16 H X 18 X X X X 53 4 2 2 x RS2 4 16 X SmartLab
75. 500 nm AZO SSP 500 nm 50 22 90 44 TCO 1 5 50 100 900 nm AZO SSP 20 40 39 90 39 900 nm
76. 8000 pm 2000 rpm AZO SSP sc AZO AZO SSP sc 14 9 mA cm2 2000 rpm sc 17 2 mA cm2 sc LG AZO SSP LG LG 5 sc 14 9 mA cm7 1 ye
77. E 2100 E 1950 2014 1950 20 2 40 E 50 2020 Bi 120 100 ll 80 60 ll 20 0 1950 2000 2050 2100 1 2 2
78. TCO 5 2 TCO TCO TCO 0 5 um 5 1 uc SiH 1 57 5
79. LE 70 300 C LG 250 PC LG 2000 8000 rpm LG LG 600 nm 6000 rpm
80. LG 7 4 4 7 4 3 LG TCO VULG Si LG VULG 4 2 a Si H LG a Si H es 180 C ul
81. 7 4 7 4 1 LG LG 8000 rpm 250 PC 7 4 300 nm 800 nm 8 BK7 LG
82. 300 C NP ZnO NP ZnO NP ZnO 5 9 NP ZnO NP ZnO NP ZnO NP ZnO
83. 6 7 a SiH uc Si H c Si 1 1 eV SR I 10 um a Si H 9 uc SirH a SiH nc SiiH 2 2 3 Si
84. TCO S 1 TCO 100 nm 3 4 2 ossy ga 6 7 Kb 8 2TN nea tL mz N ay ba Ci 4 nmea Np 7zned mp nmea 5 1
85. NN Bi 1 2014 23 http www enecho meti go jp abou whitepaper 2014html 2 2 1 html 2 United Nation World Population Prospects The 2072 Revision http esa un org unpd wpp unpp panel population htm 3 pp 6 9 BP 2008 4 A I Khan Pre 1900 Semiconductor Research and Semiconductor Device Applications IEEE Conference on the History of Electronics 2004 http solarsystem history com index html 6 IEA PVPS Report 4 Snapshot of Global PV 1992 2012 pp 6 http iea pvps org fileadmin dam public report 7 Renewable Energy Policy Network for the 21th Century Renewables 2014 Global Status Report pp 25 27 2014 8 H Keppner J Meier P Torres D Fischer A Shah Appl Phys 4 69 169 177 1999 9 NREL Best
86. 100 Ma 4 6 Atomic Force Microscopy AFM SPA400 1 60 F Zan AFM
87. LG c LG AZO SEM qd AZO SSP SEM RMS AZO 6 6 AZO SSP SEM LG AZO 3 0 x 102 cm3 9 13 cm27Vs AZO SSP AZO 3 4 x 102 cm3
88. i uc Si H 7 uc SiH 500 700 AZO SSP pc Si H TCO AZO SSP E
89. ml 1 5 Si II III Si
90. 3 3 3 TCO 3 2 Wi os i ZnO AZO Al Al 1 wt AZO 5 A TCO
91. 6 Si 7 8
92. TCO RMS 10 nm 16 4 600 nm SnO gt F Asahi VU RMS 27 nm 10 F I 26 mV Voc gc 20 6 Si TCO
93. 4000 rpm 34 104 nm LG 600 nm 1 34 MgF 1 38 LG MsgF gt 7 18 4000 rpm LG MgF MgF gt 600 nm 109 nm 600 Inm 1 23 122 nm LG
94. 7 600 nm 1 40 2 4 a Si H 300 gt C 600 nm 1 34 Asahi VU HH 1 38 MgF gt Si Si EE 153
95. 4 4 7 1 7 2 LG 2 LG NAir NLG LG z Gu LG Rars nGuass z BK7
96. A A Rt Te SR 7sc P 0 h 0 x SR DX100 4 24 c g 1 4 23
97. 6 6 2 AZO 6 6 3 uc Si H 6 7 6 7 1 6 7 2 uc SiiH 7 7 1 7 1 1 7 1 2 7 2 7 3 7 4 7 4 1 7 4 2 7 4 3 7 4 4 111 79 85 87 89 92 92 93 94 96 98 102 104 109 113 117 122 125 126 126 130
98. 100 a Ga 80 450C o 60 500C 3 lt 550C gt 600 C 6 40 650C 8 6 60 400 500 600 700 800 900 1000 1100 1200 Wavelength nm 50 40 o 30 gt 9 20 G 10 0 20 40 60 80 100 120 Particle diameter nm S 11 a 450 650 CC NP ZnO 5s0 nam NP ZnO 2000 nm 66 5 NP ZnO NP ZnO 5 11 b 5s0 nm NP ZnO
99. H z stacked NP TCO 5 3 2 NP ZnO NP ZnO NP ZnO NP ZnO NP TiO gt 3 3 3 AZO
100. TCO Si LG TCO TCO LG 8000 rpm TCO 6 23 a LG AZO SSP nuc SiH AZO AZO SSP LG 700 nm
101. a 350 W b 1 H 10 6 1
102. NP TiO gt stacked NP TCO NP ZnO nml 2400 nm 10 nml r 3 3 2 NP ZnO 30 40 nm RMS AZO ITO NP ZnO AZO 1000 nm NP TiO gt 5 10
103. Voc 5 45 TCO sc 2 3 mAcm2 ml AZO SSP EE FF 6 20 J Voc FF et AZO SSP 17 21 0 51 0 67 5 86 FlatAZO 14 91 0 49 0 75 5 45 Current density mA cm7 a s 0 0 1 0 2 0 3 0 4 Voltage V 0 5 6 15 AZO SSP uc Si H i
104. 110 6 Reflectance 400 600 800 1000 1200 Wavelength nm 6 16 AZO SSP AZO uc Si H 500 600 nm AZO SSP 0 NN CoRR ON pc Si H AZO SSP NC NURI UN A NE CN MN RR AN RN pc Si H
105. 30 meV ITO TCO TCO Sn Tmdium tin Oxide ITO O2 g 3 2 1 Vo Wf 2e 3 3 F
106. 6 7 2 nc Si H LG 1 E AZO SSP nc Si H pc Si H 6 4 1 6 21 a LG AZO LG rpm 2000 rpm AZO SSP LG 6 21 b 2000 4000 8000 rpm AZO SSP uc SiH uc SiH 6 15
107. lt Qt 4 14 E y 7 7 emvbd B Rg 4 19 7 pj SEM p A n A B
108. 6 4 b LG LG 8000 rpm LG LG LG LG T T T a 2000 nm Unified haze value ma 500 1000 1500 2000 2500 Wavelength nm 64
109. 3 0 x 100 cm3 AZO SSP 35 44 22 8000 rpm 9 cm2Vs 44 16 cm27Vs AZO SSP AZO SSP 6 10 AZO AZO SSP
110. a Si a Si H Eg a SiiH 380 760 nm c Si 200 um a Si H leV a SiiH a SiH 0 3 0 6 um c Si a Si H
111. 2000 nm 420 CC NP ZnO NP TiO gt 400 nm 90 NP TiO gt E NP ZnO 5 21 RMS 10 nm a NP TiO gt b NP ZnO 430 C 78 SEM RMS 5 ug 100 80 60 40 Transmittance 20 500 1000 1500 2000 2500 Wavelength nm 5 22 NP TiO gt NE ZnO
112. SEM SEM SEM X 46
113. 0 nm AZO 60 80 AZO SSP 40 en AZO SSP BB 6 17 a EQE EQE AZO SSP pc Si H 700 nm
114. 6 6 b LG RMS 713 nm AZO RMS 6 2 LG AZO AZO SSP 2000 nm 30 wt 4 2 8000 rpm LG Liquid glass G type 8000 rpm 70 C 2 450 C 2 AZO 1000 nm 4 1 1 99 6 SDkV 35 3mm 5iDOk SE 66 AZO SSP a
115. ITO AZO NP ZnO 5 12 ITO NP TCO 5 4 3 ITO TCO 4 2 ITO NP ZnO AZO ITO NP TCO a NP ZnO AZO 0 X XRD 13 1 NP ZnO h 10 50 100 150 200 nm NP TCO f j
116. LG 300 1000 2000 3000 nm 2 5 wt 9 6 3 SEM 2000 rpm
117. 3 4 1 4 3 3 oT 8 11 3 4 2 a
118. NPE ZnO stacked NP TCO NP ZnO NP ZnO 88 5 NN Ni 100 Haze value 0 400 500 600 700 800 900 1000 1100 1200 Wavelength nm 30 stackedNP TCO NP ZnO NP ZnO NP ZnO stacked NP TCO NP ZnO 450 PC 650 C 350 nm
119. 3 DC RF 35 1H 4 4 2 2 4 5 RF AV293 000 71 mm 75 A NN
120. 700 nm Si 11 221 20 2 Si 1 pp 64 83 2001 2 1 pp 26 33 1 pp 46 48 4 D L Stabler C R Wronski Appl Phys Lett 31 292 1977 Plasma Fusion Res 86 33 36 2010 6 S Veprek Z Iqbal and F A Sarott Phil Mag B 45 1982 7 A Matsuda Thin Solid Films 337 1 1999 8 N Beck J meier J Fric Z Remes A Poruba R Flickiger J Pohl A Shah M Vanecek Non Cryst Solids 198 200 903 906 1996 9 R Braunstein A R Moore F Herman Phys Rev 109 695 1958 10 M Zeeman O Isabella S Solntsev K Jager Sol Energy Mater
121. 4 2 1 RF 1 E Direct Current DC DC 13 56 MHz 1 REF Ar Ar
122. E uc Si H 4 E E 44 AZO SSP p nc SiO H i uc SirH n nc Si H AZO Ag AZO pin i SSP AZO 6 15 Lr AZO SSP AZO 1 5 86 20 mV AZO SSP 4ZO
123. HH LG a b LG 8000 rpm 142 7 600 nm LG 7 13 b 600 nm LG LG 0 0 PC LG 70 300 PC LG
124. 156 5 2013 11 14 15 P2 8 6 2014 61 2014 3 17 20 17a PA4 14 7 2014 61 2014 3 17 20 18p E12 3 8 Si 2014 75
125. 2014 9 17 20 17a PB4 14 RI 2011 NiO 157 1986 12 22 1123813005 2002 4 2005 3 2006 4 2010 3
126. 1 2 H Sakai T Yoshida T Hama Y Ichikawa Jpn J Appl Phys 29 630 633 1990 H B T Li R H Franken J K Rath R E I Schropp Sol Energy Mater Sol Cells 93 338 349 2009 M Python E V Sauvain J Bailat D Domine L Fesquet A Shah C Vallif J Non Cryst Solids 354 2258 2262 2008 M Python O Madani D Domine F Meillaud E V Sauvain C Ballif Sol Energy Mater Sol Cells 93 1714 1720 2009 T Matsui M Tsukiji H Saika T Toyama H Okamoto J Non Cryst Solids 299 302 1152 1156 2002 J Cox A J DeWeerd J Linden 47 J Phys 70 620 625 2002 F Bohren D R Huffman Absorption and Scattering of Light by Small Particles pp 132 134 Wiley New York 1983 M Hu K Giapis D Poulikakos Appl Phys Lett 98 211904 2011 O Berger D Inns A Aberle Sol Energy Mater Sol Cells 91 1215 1221 2007 Q Huang Y Liu S Yang Y Zhao X Zhao Sol Energy Mater Sol Cells 103 134 139 2012 E Ando M Miyazaki Thin Solid Films 392 289 293 2001 S Takayama T Sugawara A Tanaka T Himuro J Vac Schi Technol A 21 1351 1354 2003 H Karzel U Potzel W Potzel J Moser C Schafer M Steiner M Peter A Kratzer G Kalvius Mater Sci Forum 79 82 419 426 1991 91 6
127. Qsq oO H square Si 4 7 2 p Rispeet z 16 z 4 14 4 16 x EE p 7 n A x A Q 1
128. Reactive Ion Etching RIE nm 200 500 nm TCO 2 3 um 200 500 nm TCO TCO Mie oi 26 27
129. 1 NP ZnO AZO 2 AZO NP ZnO 2 AZO 11 NP ZnO TCO NP ZnO AZO RF ITO AZO 5 4 2 ITO ITO 12 ITO NP ZnO AZO
130. 8 a b E I 1 sl EE 4 3 a b 33
131. LG 70 500 C LG 7 13 a LG LG LG 70 FC 78 nm 200 C 93 nm 200 C LG 500 CC 51 nm 70 C LG 100 E 90 oO gs 80 oO 70 E sg 60 50 0 100 200 300 400 500 Temperature C 1 55 1 50 Void ratio x 1 45 15 20 23 23 1 40 Pi 30 1 35 Glass 100 200 300 400 500 Temperature C 7 13
132. 0 Si Si Be Si
133. 3 mm TCO i H ml Scanning Electron Microscopy SEBM S 4800 10 Pa
134. Si MgF gt MgF gt 4 2 1 4 1 MgF gt
135. mwp zmea Ak x 10 11 wp 1 Xrea 4 9 nmp 4 8 su 121 13 ZznO TO zxx 1 0 3 Si
136. 1 1 ml RF 107 TCO lt RF Ar Ar
137. Si 6 4 Si a 1839 1 E Si 1954 1 F 12 3 E
138. 6 3 SEM a 500 nm b 1000 nm c 2000 nm d 3000 nm 5 wt 2000 pm 96 6 6 4 a 1 LG
139. Si a Si H upc Si H 4 3 1 Si Si CVD a Si H SiH4 Hs Si CVD CVD 4 CVD 1 Enhanced CVD PECVD 7 a Si H CVD SiH4 H gt
140. Bi 120 Share of PV Installations per Region from 1992 to 2012 GW m Middle East and Africa Other Major Countries 80 wm Middle East and Africa IEA PVPS America Other Major Countries mw America IEA PVPS 60 Asia Pacific Other Major Countries W Asia Pacific IEA PVPS 40 Europe Other Major Countries mw Europe IEA PVPS 20 0 w 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 1 3 6 ul
141. 4 11 4 11 Eg E SEM SEM 6
142. 4 9 i J
143. LG 400 nm LG Asahi VU 7 8 b LG Eagle XG LG LG Asahi VU 15 lt Reflectance 400 500 600 Wavelength nm wl Asahi VU Difference in reflectance 400 500 600 Wavelength nm wlo LG layer 700 700 800 800 7 8 a LG Asahi VU b LG
144. NP TiO NP ZnO 5 1 NE TiO 4 8 4 9 NP TiO gt 1 70 600 nm 0 5 NP TiO NP ZnO AZO NP ZnO AZO NP TiO S 5 3 TCO 5 5 2 NP TiO gt
145. Va 4 3 4 2 dq 1 2 1
146. 3 7 5 23 LG BK7 600 nm 1 51 LG 600 nm 1 40 BK7 0 1 MgF gt n 1 38 600 nm LG MgF 1 60 m a Refractive index 3 1 35 1 30 400 500 600 700 Wavelength nm 7 5 23 LG MgF gt 134 800 B
147. 350 650 Inml 7 9 LG LG Si 7 5 7 4 LG a Si H
148. AZO SSP 44 AZO SSP 1 7 x 103 Qcm LG AZO LG RMS AZO c AZO SSP 6 13 AZO SSP AZO SSP 400 1200 nm 80
149. AZO AZO ZnO AZO ITO NP ZnO 4 12 4 1 1 AZO 400 gt C ITO 5 13 NP ZnO ITO 100 nm 5 13 ITO 100 nm NPE TCO a SEM 68 H 5 13 2 5 E 1 SEM ITO 5 12 AZO
150. h 2 2 AE E Eo SR 27 3 3 5 E EEZo BM ne m 6 102 cm3
151. AR 7 10 7 12 500 nm nz V1 52 1 23 Es 23 129 ara 7 AR 1 23 122 nm 600 nm 0 AR 1 23 1 23 MgF gt n 1 38 600 nm 1 Qc 7 2 3 4 4 E
152. 600 nm oo 7 1 V LG LG LG sc 13 7 mA cm2 15 1 mA cm oc FF LG 0 94 V 0 64 LG I Current density mArcm7 s 0 0 0 2 0 4 0 6
153. AZO SSP LG AZO 115 2 6 AZO c LG AZO SSP I OO AZO SSP LG AZO SSP
154. 58 5 5 3 TCO NP ZnO 2 33 65 2 350 W 1 NP ZnO NP ZnO NP ZnO NP ZnO NP ZnO 70 PC 10 450
155. AZO 1 6 6 1 6 8 1500 2000 3000 4000 6000 8000 rpm
156. i a SiiH pe Si H 8 c Si 2 Si TT uc Si H A CPM hc SiH PDS TR l cem Apparent Absorption 0 6 1 1 4 1 8 2 2 Energy eV 2 6 a SiiH uc Si H 8 9 9 uc Si H a Si H 1 niants ni 2 7 a b a Si H pc Si H
157. stacked NP TCO 5 27 b stacked NP TCO NP TiOzNP ZnO NP ZnO Asahi VU stacked NP TCO NP TiO 600 nm 12 4 16 2 4 NP TiO NP ZnO NP TiO 4ZO stacked NP TCO NP TiOzNP ZnO
158. 1960 50 3 2014 E 120 toe 3 1 2 1950 2012 2 f 2050 14 000 _ 10o toe 12 000 10 000 8000 5 000 i 4000 2 000 0 1965 1970 1975 1980 1985 FEF 1990 1 1 1995 2000 2005 EF 2010 1
159. 4 2 5 28 stacked NP TCO a Si H NP ZnO NP TiO gt 450 PC 3 2 Asahi VU AZO Flat AZO stacked 85 5 oo Asahi VU gt Current density mA cm CO 0 0 2 0 4 0 6 0 8 1 Voltage V 5 28 stacked NP TCO AZO Asahi VU a Si H S 2 528 Jsc mA cm2
160. AZO SSP Voc 0 31 V 0 49 V LG sc RN I RMS uc Si H LG LG AZO SSP 15 0 mA cm Voc LG LG Voc AZO SSP
161. AZO SSP 6 19 AZO SSP AZO SSP LG 2 5 x 1020 cm3 AZO SSP LG 114 6 421 10 si L 5 _ a E 120 10 8 2 10 0 5 8 103 gt 6 4 10 2000 4000 6000 8000 Rotating speed rpm 6 19 LG 2000 8000 rpm
162. LG 600 nm 1 46 70 C 1 36 300 gt C 250 CC LG 1 40 600 nm LG 300 C LG 500 C LG 70 CC LG LG LG 7 14 a d LG 70 C LG 7 14 200 C
163. stacked NP TCO Asahi VU A stacked NP TCO Si i stacked NP TCO AZO uh a unl 5 5 4 Si stacked NP TCO a Si H
164. 0 Si i F 1 4 National Renewable Energy Laboratory NREL 1976 2014 9 EN ON OR OA Si 25 6
165. 10 a Si H uc Si H 300 nm 1 0 um 1 10 50 pc SiH 140 a SiH 80
166. HH H 330 EE or tt 4 8 i PbS PC 4 4 1
167. 108 6 6 10 Ee 6 6 2 AZO SSP AZO SSP uc Si H E
168. 4000 8000 rpm LG 4000 rpm 600 nm LG 1 34 34 LG 7 14 cC LG 145 7 300 250 200 250 PC 150 100 300 FC Calculated thickness nm a 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 Rotating speed rpm 1 45 1 35 Refractive index
169. 5 27 a stacked NP TCO NP ZnO NP TCO stacked NP TCO NP ZnO Transmittance NP TiO NP ZnO m AZO on NP ZnO stacked NP TCO 400 500 600 700 800 900 1000 1100 1200 Wavelength nm NP ZnO NP TiO NP ZnO staked NP TCO Haze value 3 op Asahi VU 400 500 600 700 800 900 1000 1100 1200 Wavelength nm 5 27 stacked NP TCO a stacked NP TCO NP ZnO NP TCO NP ZnO NP
170. LG E LG 7 4 3 7 4 1 7 4 2 250 CC LG LG TCO LG 115 nm 7 10 Si Asahi VU LG 250 CC LG hs 1 40
171. 5 10 NP ZnO RMS RMS 5 um x 3 um 256ptx256 pt NP ZnO RMS 5 nm 520 gt C 35 nm RMS 10 5 10 RMS 5 9 50 40 30 20 RMS nm 10 0 400 450 500 550 600 650 700 Temperature C
172. 500 CC 2000 nm NP Zn AZO AZO 4 1 a 1100 nm 5 12 a AZO 5 12 a b 5 12 NP ZnO AZO a b SEM 500 C 2000 nm NP ZnO AZO 1000 nm 67 5 SEM AZO AZO AZO AZO
173. LG LG LG 140 7 7 5 1 LG GLG LG 7 3 7 12 LG 70 200 250 300 400 300 C GLG
174. Si 77 4 x 7 8 EF I x A loexp a x 2 7 g 2 6
175. X D teX X Cu Kal 0 1541 nm 43 kV 200 mA 20 80 9 X 4 9 4 9 1 2
176. 10 Si 2014 1976 0 Si 13 4 Si Si FR nl Best Research Cell Efficiencies INREL Multijunction Cells 2 terminal monolithic Thin Film Technologies ched CIGS concentrator 48 M oe ei MM metamorphic CIGS Spectrolab 0 a IMIM inverted metamorphic Cds LM 364x Y Threejunction concantrator Amorphous SH stabilized Spectrolab Fr a wa 2 rr 44 Three junction non concentrator Nano micro poly MM 44 449 Twojunclion concentrator Emerging PV A Twojiunclion non concentrator 0 Dye sensiized cells
177. 11 6 10 f AZO SSP uc Si H Si Si AZO SSP uc Si H Si
178. 1990 7 2012 US E EN 6 FTT 2013 100 GW 3 7 0 7 A
179. 35 um E gt NP TiO gt 0 PC 10 20 77 1 NP TiO gt 5 5 5 2 NP TiO gt a NE TiO gt 5 21 NP TiO gt SEM 450 C SEM RMS SEM NP TiO gt NP ZnO NP ZnO
180. NP TiO gt 18 nm NP TO PST_18NR PST 18NR 5 20 450 C 7
181. AR 0 7 1 exp 2Z 128 7 exp i28 1 28 TF2ndcos0 2m Dr md 2m 12 7 10 m 1 mid 44 AR 7 9 AR Rak 0
182. EN E E E E ya a JH 2 14 TCO r 1 TCO a TCO
183. NP ZnO NP ZnO SEM NP ZnO 1 55 hm POP Tt FT 89 5 H AZO AZO AZO z
184. 126 7 AR 7 1 2 1 HI 7 1 0 2 gpj ke
185. 44 82 100 _ 80 S 8 60 c 8 Cover ratio E40 44 2 39 1 34 6 20 31 4 22 0 400 500 600 700 800 900 1000 1100 1200 Wavelength nm 6 13 AZO SSP 107 6 100 80 SS o 60 gt Cover ratio 8 40 44 2 39 1 34 6 20 31 4 22 0 400 500 600 700 800 900 1000 1100 1200 Wavelength nm 100 90 80 70 Haze value 60 50 40 20 25 30 35 40 45 50 Cover ratio 6 14 AZO SSP 4 500 nm 900 nm
186. ITO 100 nm 47 5 nm AZO TTO E AZO 69 nm ITO ZnO 4 AZO ITO AZO ITO NP ZnO ITO E AZO 5 100 80 E AZO ITO glass ou 60 E G 40 EE 5 20 1 AZO ITO NP ZnO 0 1 1 1 0 50 100 150 200
187. N 4 7 1 Van der Pauw 15 Van der Pauw 4 4 4 13 Van der Pauw A B C D AB As CD cp BC 7pc DA 5 Agcp Ascp Vep Rag cp 4 12 Vpa Rsc pa gt 4 13 BC 2 Van der Pauw nt _ 2In2 Agcp Rgcpa Xx f Rag cp Rscpa 4 14 p AAscp Ascp AAscp Rgcpa lt 10
188. ub c d n p p n n P p B n p
189. AZO 30 cm2Vs AZO ITO AZO AZO 72 5 6 5 x 10 Ocm AZO 8 13 Q sq NP TCO 5 17 Cc 2000 nm 500 C NP ZnO ITO gt z
190. LG 6 22 AZO SSP II LG AZO Voc 0 49 Vv 7 0 75 10 E 4 LG AZO
191. NP TiOzNP ZnO AZO 64 nm NP TiO NP ZnO 5 24 b d SEM NP TiO 63 8 nm AZO NP TiO NP ZnO 66 6 nm AZO NP Tio 63 7 nm AZO NP ZnO Reference 10 20 30 40 50 60 70 80 26 6 deg Intensity a u 5 26 NP ZnO NP TiO gt NP TiOz NP ZnO AZO XRD NP ZnO ZnO XRD 450 2C
192. a 2 gt _Ne e em 3 6 gs 9904 05200 OA RN RD ee 10 cm 7 uc Si H 1200 nm TCO 2x101 cm3 25 3 4 2 2 3 Si
193. 6 Si NE TCO TCO 0 1 5 5 10
194. CHsb 4 10 f 74 410 8 CH n T b CH L E b 45 1 74 CO 4 4 2 f j Ei 10
195. Haze value S 18 ITO ug 4 0 400 500 600 700 800 900 1000 1100 1200 Wavelength nm NP TCO 2000 nml 500 gt C NP ZnO AZO 800 nm NP ZnO NP TCO ITO ITO 10 nm NP TCO 25 550 nm TCO
196. LG AZO 002 83 7 nm 82 1 nm 94 6 100 80 60 40 Transmittance 20 500 1000 1500 2000 2500 Wavelength nm 6 2 LG AZO 6 1 LG AZO 002 AZO 1200 nm LG Qcm cm 3 cm2Vs nm 6 28 x 10 3 59 x 10 0 27 7 82 1 RL 6 47 x 10 3 36 x 10 0 28 7 83 7 AZO LG AZO LG AZO
197. O oO B D 4 13 van der Pauw be 49 f 1 03466 Van der Pauw E Si Rag cp Rsc pa Rag cp Rsc pa we 4 13 10 mm TCO 2 Rag cp Rsc pa Rag cp gcp4 Al E 2 4 15 TCO 4 15
198. 5 1 NP ZnO NP TCO NP ZnO 30 AZO CI AZO Si n 3 0 0 NP TCO 5 18 ITO NP TCO 74 5
199. ITO 10 150 nm 1 1 x 103 Qcm 200 nm 3 0 x 1 ug ran NP TCO ITO NP TCO 2 0 Qcm ITO NP TCO NP TCO 5 17 ITO 1000 nm 100 80 60 40 Transmittance 20 400 600
200. RF Rp te Cnn i RP TMP 8 0 x 10 Pa Ar 99 99 1 MEO 20 sccm TMP TMP 1 0 Pal 50 W 10 4 1
201. NP ZnO NP TiO gt 87 2 O HH NP ZnO 5 29 450 500 550 600 650 C NP ZnO stacked NP TCO RMS NP TiO gt stacked NP TCO 2000 450 PC 430 C RMS 10 nm RMS AZO NP ZnO lt RMS stacked NP TCO RMS N NP TiO gt RMS 10 nm NP TiO gt P ZnO NP TiO gt NN 5
202. 4 8 600 nm 1 55 4 9 NP ZnO 0 55 61 5 9 NP ZnO 5 7 a NP ZnO 1500 rpm 8000 rpm NP ZnO NP ZnO
203. E 0 36 Si Si buffer a SiC H PECVD a Si H Si H CO 2000 C p a SiC H i H E a
204. NP ZnO 5 24 c NP ZnO 4 NP TiO gt NP ZnO NP ZnO AFM RMS RMS NP TCO RMS AZO RMS NP ZnO LL 1 5 24 d 5 25 5 19 a
205. b TCO AZO NP ZnO NP TiO gt NP TiO NP ZnO AZO XRD 5 26 NP ZnO ZnO XRD 450 PC 10 nm ITO XRD NP TiO AZO XRD XRD 34 4 ZnO 002 4 22 002 NP TiO gt AZO 67 Inm NP ZnO 64 nm
206. 20 40 stacked NP TCO NP ZnO stacked NP TCO NP ZnO Si TCO TCO TCO TCO NP ZnO
207. 2010 4 2015 3 2012 2015 2009 4 2010 4 2011 4 2012 4 2012 4 2013 4 2014 4 2014 4 2010 3 2011 3 2012 3 2013 3 2015 3 2013 3 2013 3 2013 3 2011 10 2014 3 2012 4 2013 3 AsS Ag p NiO ZnO Si TCO
208. LG e 8000 rpm 9 4000 rpm 2000 rpm Flat AZO EQE 400 600 800 1000 1200 Wavelength nm e 8000 rpm w 4000 rpm 2000 rpm Flat AZO IQE 400 600 800 1000 1200 Wavelength nm 623 LG AZO SSP pc SirH a b AZO 121 AZO SSP nm pc Si H LG AZO SSP Ue ka 6
209. LG 146 7 7 17 LG 7 17 LG LG LG LG LG 7 16 a LG I es 7 14
210. 6 un eeW 8 H Si i RP 40 90 mm 0 1 mm TCO p a SiC H buffer i a Si H n uc CH4 Si MM TMP SR p 4 4 2 a SiH SiH4 CH4 Hs Bs H PH Pa nm 5 50 p a SiC H 5 53 17 TMP
211. 7 19 b LG Asahi VU 300 C LG 1 Asahi VU 300 800 Inm 550 nm 3 E 570 nm 3 2 Asahi VU LG 650 nm 2 9
212. SnO 11 19 2 Si 10 0kV 33 0namx50 0k SE M _ 2 8 SnOz F Asahi type VU SEM 2 8 SnO gt F Asahi type VU Asahi VU 200 500 nm SR i oo
213. 136 Asahi VU 6000 rpm HH Si 7 LG 87 nm 8000 mm LG NN LG 600 nm LG 1 LG 107 nm 600 nm 7 7 8 a Asahi VU LG
214. LG 2000 rpm AZO SSP 6 200b 120 6 700 nm 2 6 21 uc SiH NRG NN 6 20 b 6 22
215. TCO pc Si H 5K GR TT E Asahi VU 1 5 mA cm c 230 C
216. 10 nm ITO AZO XRD ZnO 82 5 NP TiO gt NP TiO gt 3 1 4 Rl NP ZnO E AZO NP ZnO
217. 148 7 250 C LG 2 4 GLG 3 2 LG 7 8 b Asahi VU LG Eagle XG wlo LG layer Reflectance 400 500 600 700 800 Wavelength nm b 0 G 1 y 2 wl Asahi VU 8 3 8 4 a 5 400 500 600 700 800 Wavelength nm 7 19 a LG Asahi VU b LG Asahi VU Eagle XG LG 4000 rpm
218. SEM RMS NP TCO NP ZnO 2000 75 5 10 0kV 33 0mm5iX50 0k SE M _ S 19 60 a NP TCO b Asahi VU SEM NP TCO 2000 nm 500 C NP ZnO ITO AZO 10 nm 800 nm RMS nm 500 PC AZO 800 nm Asahi VU SEM 200 400 nm Asahi VU RMS 24 nm
219. je 2n D a le lb 3 7 a Ee dgPTID 3 27 3 3 kmeq 2znmea 4 nmea 4 gam pj mn jn mx jn C2 uijn 2X mjn mr G3 8 um jn ms xh GO wah CO mxjn Gna ham jn Gm xjn OY jn mn iamjaGnx xhD GD unD Glmxja Gn Bessel Hankel x 2znmeaa 4 a Mie s1 Mie
220. Si H f Ta 1 0 mm 1 n uc Si H 4 3 4 a Si H B H ITO 4 2 a Si p buffer n RNC a SiH Si H TTO Ag pin p n BsH PH a SiC H p Nt Bs 3 E
221. SiHa Si H SiH4 Si SiH Si Si SiHs SiHs 300 C i 200 C PECVD RF VHF 60 MHz VHF RF
222. 11 2 Si Qc 7 T a i uh n l exp 2 1 2 1 7 7 Voc fsc pi x 7op pp op V x 1 100 2 2 mn FF oc x sc op x op H V x1 FF 2 2 3 Voc X lsc
223. LG GLG 1 LG 7 GLG LG BK7 LG 87 nm 23 BK7 MgF
224. NP TCO 100 200 nm AZO RMS 7 nm ZnO NP ZnO RMS Asahi VU 32 nm 76 5 z 5 5 a 5 4 5 RMS Si i
225. 2 2 2 7 75 27o1fn 2 01 2 0 7 11 1 012 27orf 2 1 7172 2 7 11 0 ro 1 0 2 AR 0 7 gt 7 o 1 7 72 N 7 77 7 12 0 25 on2 1 AR 7 12 m m 2 2 0 AR Si 600 nm
226. Qc 900 nm 44 AZO SSP E AZO SSP LG AZO AZO SSP LT
227. 3 3 NO 1 3 2 gt c enu 3 1 e x e it g
228. 80 1200 nm ITO ITO 5 16 ITO ITO ITO 200 nm NP TCO 800 nm ITO 10 nm
229. 9 12 z van der Waals van der Waals van der Waals 31 a Va 4 Hamaker van der Waals 4 2 van der Waals
230. SiO gt SiO gt 6 LG LG 125 7 7 1 7 1 1
231. pp 287 292 1983 19 L Y Tsou 7 Electrochem Soc 140 10 2965 2969 1993 20 Z Calahorra E Minami R M White R S Muller J Electrochem Soc 136 6 1839 1840 1989 21 H Sai K Saito N Hozuki M Kondo Appl Phys Lett 102 053509 2013 22 M Kambe N Taneda A Takahashi T Oyama Rep Res Lab Asahi Glass Co Ltd 60 7 2010 23 A Hongsingthong T Krajangsang 1 A Yunaz S Miyajima M Konagai Appl Phys Express 3 051102 051104 2010 24 B Janthong Y Moriya A Hongsingthong P Sichanugrist M Konagai Sol Energy Mater Sol Cells 119 209 213 2013 25 A Bessonov Y Chao S J Jung E A Park E S Hwang J W Lee M Shin S Lee Sol Energy Mater Sol Cells 95 2886 2892 2011 26 C F Bohren D R Huffman 4bsorption and Scattering of Light by Small Particles pp 83 104 Wiley New York 1983 27 A J Cox A J DeWeerd J Linden A4m J Phys 70 620 625 2002 28 C F Bohren D R Huffiman 4bsorption and Scattering of Light by Small Particles pp 477 482 Wiley New York 1983 29 C F Bohren D R Huffiman 4bsorption and Scattering of Light by Small Particles pp 132 134 Wiley New York 1983 29 4 4 1
232. NP ZnO NP ZnO 450 650 C NP ZnO 35 3 1 2080 nm 63 5 a NP ZnO 5 8 450 500 550 600 630 C 1 NP ZnO SEM 70 C 1 NP ZnO SEM 70 CC 4350 C 1
233. Si pyi DOO LE 1 3 6 7 2 4 1 2 5 6 11 14 Si
234. ITO NP TCO 600 nm ITO AZO A4ZO Azo 2 0 mz 1 0 AZO AZO 9 AZO 4 sin er sin 1 6 30 5 2 AZO NP ZnO
235. 7 T 154 1 S Miura K Suzuki S Noda M Inoue K Murakami S Nonomura Structural and Optical Properties of Smooth Surface TCO Thin Films Deposited on Different Sized Stacked Nanoparticle Layers for Window Blectrode of Thin Film Si Solar Cells Materials Transactions SS 2014 pp 1765 1769 S Miura M Tashiro K Suzuki S Noda S Hori S Nonomura Stacked nanoparticle transparent conductive oxide substrate combining high haze with low surface roughness for improvement of thin film Si solar cell performance Thin Solid Films 574 2015 pp 78 83 S Miura S Noda K Suzuki M Inoue K Murakami F Ohashi S Nonomura Eormation of high light scattering texture on glass s
236. 7 3 ab 7 6 LG 250 CC LG LG 7 7 A gt Oe lt Ts OO a 0 a Reflectance
237. Reflectance 6000 rpm 250 C Asahi VU 1 7 9 LG 0 300 400 500 600 700 800 7 9 LG Wavelength nm a Si H 138 7 LG 350 650 nm 3s0 650 nm 1 5 2 5 LG 7 10
238. 250 PC LG 230 C LG 300 PC LG LG LG 8000 rpm 2000 mpm 73 nm 161 nm 7 13 A 300 C LG 250 PC 7 16 b 600 nm LG LG LG
239. BHMIE Mie 28 x 1 3 7 27 29 6 x 1 1 166 2 pp 49 56 2008 2 166 5 pp 11 19 1997 3 G Frank E Kauer H Kostlin Thin Solid Films 77 107 118 1981 4 I Hamberg and C G Granqvist 7 Appl Phys 60 R123 1986 5 T S Moss Proc Phys Soc London Sect B 6
240. Si 2000 3000 GLG LG 2000 pm LG GLG LG LG 300 C LG 4000 rpm
241. a Si c S E H 2 Si uc Si H 200 C Si 100 nm Si uc Si pc Si a Si 10 nc Si H PECVD SiH4 SiH4 10 200 C Si Si
242. z NT 50 40 NP ZnO 1 E 30 20 stacked NP TCO 10 NP TiO 0 400 450 500 550 600 650 700 Temperature C 5 29 NP ZnO RMS ZnO RMS 450 gt C NP ZnO stacked NP TCO NP NP TiO gt RMS RMS RMS 20 30 stacked NP TCO RMS 1 NP TiO gt NP ZnO
243. 3 1 MO 2p 22 ra 3 3 3 1 MO ma n n
244. 9 V 670 ea 1 0 9 1 187 350 nm 4 mm 0 1 mm 4 1 4 8 FA j 41 HH 1 H
245. 570 nm 4 9 250 CC GLG 1 144 3 7 Reflectance 8000rpm 3000rpm 6000rpm 2000rpm 5000rpm Eagle XG 4000rpm 400 500 600 700 800 Wavelength nm 7 15 2000 8000 rpm GLG LG 300 C LG 7 16 a LG
246. AZO 4 ITO TCO 5 5 5 5 1 5912 TT 40 40 42 45 45 46 47 49 50 52 53 53 54 55 57 58 58 60 63 67 68 69 75 77 78 5 5 3 TCO 5 4 Si 5 6 TCO 6 6 1 6 2 6 3 AZO 6 4 6 5 AZO 6 6 6 6 1
247. 400 1200 nm 80 620 SSP b 100 _ 80 8 60 5 40 8000 rpm 5 4000 rpm 3000 rpm 20 2000 rpm 400 500 600 700 800 900 1000 1100 1200 Wavelength nm Haze value 8000rpm 4000 rpm 3000 rpm 2000 rpm 400 500 600 700 800 900 1000 1100 1200 Wavelength nm LG AZO a 116 6 1 AZO SSP j AZO SSP 1 LG 6 20 b LG LG A
248. 8000 rpm 2000 rpm sR AZO 117 FF 0 69 0 75 FF 77 0 76 6 Current density mA cm7 8000 rpm 4000 rpm 2000 rpm Flat AZO 0 0 1 0 2 0 3 0 4 0 5 Voltage V 18 0 b a 9 17 0 E lt 16 0 15 0 9 0 55 14 0 2 9 50 SS gt 0 45 0 80 0 75 LL 0 70 0 65 7 0 0 60 6 5 gt 6 0 5 5 Flat AZO 2000 4000 6000 8000 Rotating speed rpm 621 LG AZO SSP nc Si H a b A4ZO 118 6
249. RMS LG AZO SSP AZO SSP nc SiH LG FF 0 69 0 75 uc Si H A Si a re PR 123 6
250. TCO i ii Gi up Gii TCO TCO 6 1
251. 5 1 3 1992 20 1 8 x 108 GW 1 50 1 3 ce E E
252. Intensity a u 5 14 ITO gt z 2079 deg 0 10 50 100 150 200 nm NP TCO XRD ZnO XRD NP ZnO XRD 002 3 13 TTO L i 70 NP TCO ZnO 002 NP TCO E ITO NP ZnO 39 nm
253. LG Y 1 1 pp 140 150 2013 2 1 pp 80 110 3 Filmetrics Inc Refractive index data base http www filmetrics comrefractive index database MgF2 Magnesium Fluoride 4 M Dodge et al Appled Optics 23 1984 5 3 http www filmetrics com refractive index database BK7 Float Glass 151 8 Si NN oe 5 TCO
254. LG LG 2000 nm 6 2 AZO LG AZO AZO SSP 98 6 2 30 wt 8000 rpm 8000 rpm LG LG 1000 nm AZO
255. NP TiO gt 5 24 AEM NP ZnO NP TiO gt NP TiO NP ZnO stacked NP TCO nm RMS 5 25 NP TCO RMS nm 40 35 30 25 20 15 10 5 0 A EN NP TCO NP Zn0 MP ZnO with AZO NP TiO MP ZnO with AZO NP TiO NP ZnO NP TiO j 450 C 81 RMS NP TCO NP ZnO 5
256. SiO LG 7 14 d LG 7 5 2 300 CI 7 5 1 300 C LG LG 300 PC LG 7 15 4000 5000 6000 8000 rpm 300 JC NN
257. 3 3 1 3 2 3 3 3 4 3 4 1 3 4 2 4 4 1 4 1 1 4 12 4 2 4 2 1 RF 4 2 2 4 3 Si 4 3 1 Si 4 3 2 PECVD 3 22 22 22 24 26 26 30 30 34 35 36 37 39 4 3 3 Hot Wire CVD 4 3 4 a Si H 4 4 4 4 1 4 4 2 4 4 3 4 5
258. AZO c TCO AZO 1 TiO gt NP TiOyNP ZnO AZO ES 5 AZO 5 26 NP TiO gt NP ZnO 1 21 x 103 3 5 3 b ITO NP TCO 10 Qsq NP TiO gt AZO S 1 NP ZnO NP TiO gt NP TiO gt NP ZnO 5 1 AZO AZO
259. NP TCO NP TCO NP TCO f ITO ITO 10 nm AZO 800 0 800 1000 1200 1400 Wavelength nm NP ZnO NP TCO 2000 nm 3500 CC 73 ITO 1 AZO 800 nm 5 NP TCO 600 nm 1200 nm
260. a NP TCO 24 a b staked NP TCO SEM NP TCO NP ZnO NP TiOzNP ZnO SEM SEM 60 9 5 24 ab 5 24 NP TiO stacked NP TCO a SEM b SEM C d NP ZnO NP TiOz NP ZnO SEM SEM 60 80 5 stacked NP TCO ZnO 100 200 nm E stacked NP TCO
261. 300 gt C 149 LG 104 nm Asahi VU LG 7 f 2 7 16 b 300 C LG LG H
262. NP ZnO NP TCO ZnO 002 XRD ITO gt TCO ZnO 002 ITO ITO ITO NP ZnO 69 ITO 3 NP 100 nm ZnO AZO AZO 5
263. 1 A Hongsingthong 1 Yunaz S Miyajima M Konagai Sol Energy Mater Sol Cells 95 171 174 2011 2 W W Wenas A Yamada M Konagai K Takahashi Jpn 7 Appl Phys 30 L441 L443 1991 W W Wenas A Yamada M Konagai K Takahashi Jpn 7 Appl Phys 33 L283 L285 1994 4 S Nicolay M Benkhaira L Ding J Escarre G Bugnon F Meillaud C Ballif Sol Energy Mater Sol Cells 105 46 52 2012 5 T Nakada Y Ohkubo A Kunioka Jpn 7 Appl Phys 30 3344 3348 1991 6 A Hongsingthong T Krajangsang I Yunaz S Miyajima M Konagai Appl Phys Express 3 051102 2010 7 O Kluth B Reck L Houden S Wieder G Schope C Beneking H Wagner A Loffl H Schock Thin Solid Films 351 247 253 1999 8 W Lu K Huang P Huang M Houng J Phys Chem Solids 73 52 56 2012 9 H Zu J Hupkes E Bunte J Owen S Huang Sol Energy Mater Sol Cells 95 964 968 2011 10 B janthong Y Moriya A Hongsingthong P Sichanugrist M Konagai Sol Energy Mater Sol Cells 119 209 213 2013 11 W Bottler V Sminov J Hupkes F Finger J Non Cryst Solids 358 2474 2477 2012 124 7 7
264. NP TCO NP TiO gt 5 23 NP TiO NP TCO stacked NP TCO NP TCO 450 C 2000 nm NP ZnO 10 Inm 1000 nm ITO AZO NP TiO NP TCO 79 5 AZO buffer ITO NP TiO NP ZnO 5 23 NP TiO NP TCO
265. LG 122 6 AZO SSP 2000 nm 44 LG 8000 rpm 900 Inm 82 TCO TCO pc Si H 700 nm sc 15 LG AZO SSP
266. OS GE ees
267. 9 1 4 8 3 X X H XX X K 0 9 4 21 XRD X 4 20 rad KA Bcos 02220 gt K
268. AZO NP ZnO 1 550 nm stacked NP TCO a 90 RMS 20 40 Si up E stacked NP TCO stacked NP TCO 5 1
269. SS 6 6
270. 28 7 cm2Vs AZO 6 5 x 10 Qcm AZO SSP 2 3 x 103 Qcm AZO SSP AZO 6 AZO SSP AZO SSP RI AZO AZO Transmittance 6 7 a i Qc AZO SSP 4
271. NIR IRIS RR AZO i EE NP ZnO NP ZnO NP NP TiO AZO NP ZnO 1 24 x 103 Qcm 1 03 x 103 Ocm ml AZO cm3 cm2Vs Qcm NP ZnO 3 24 x 1020 15 5 1 24 x 103 NP TiO gt 3 44 x 1020 17 6 1 03 x 103 NP TiOz NP ZnO 3 06 x 1020 16 9 1 21 x 103 83 5 ug d TCO NP TiO gt NP TCO
272. 100 Co a 1x10 cm Transmittance 4 x 10 cm 500 1000 1500 2000 2500 Wavelength nm 3 2 Al ZnO 24 a5 3 4 Burstein Moss BM 5 BM 10 cm BM AE
273. SEM NP ZnO 520 nm 5s0 Inm NP ZnO 550 C 450 C 20 630 C 40 5 4 Si NP ZnO AZO TCO NP TCO NP ZnO AZO ITO 5 4 1 AZO
274. stacked NP TCO 5 1 stacked N AZO stacked NP TCO 3 P TCO NP ZnO 5 30 stacked NP TCO NP ZnO stacked NP TCO
275. 1 2 Liquid glass G type Bagle XG Coming 2 5 1 2000 8000 rpm mini ASONE Co Ltd 70 S00 PC LG 7 3 200 nm 100 nm
276. 14 ITO XRD ITO AZO g XRD ZnO XRD XRD NP ZnO XRD NP ZnO XRD ZnO XRD 36 2 ZnO 100 002 101 0 nm AZO ITO NP ZnO f XRD 31 7 EE 34 4 XRD NP ZnO AZO
277. LG 1 40 Asahi VU LG 600 nm 2 4 i 450 nm a SiH LG 1 5 mA cm2 sc 70 500 C 150 00 8 0 8 9 LG
278. 0 9 3 7 1 A NC SO nm E 6 5 AZO 4 LG TCO
279. 1500 rpm 104 6 700 600 500 400 RMS nm 300 200 100 0 20 25 30 35 40 45 Cover ratio 6 11 AZO SSP RMS 612 nm 22 8000 rpm 333 nm 44 1300 rpm RMS AZO SSP b AZO SSP 6 12 AZO SSP
280. 8000rpm 3000rpm 6000 rpm _ 2000rpm 4000rpm Eagle XG 400 500 600 700 800 Wavelength nm 776 2000 8000 rpm GLG 250 PC 135 300 250 200 150 100 50 Calculated thickness nm 7 100 80 60 g 40 O gt 20 0 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 Rotating speed rpm 7 7 1 230 C LG LG 237 nm 2000 rpm 3 22 23
281. Asahi VU Eagle XG LG 6000 rpm 230 PC 137 7 400 nm 300 nm 500 nm 800 nm Eagle XG TCO LG 600 nm LG Asahi VU VULG GLG 2 4 300 nm VULG GLG Asahi VU Bagle XG LG
282. C LG 300 JC MgF 1 38 1 36 LG 300 C LG LG 150 7 LG 104 nm 600 nm 1 34 LG 3 2 Asahi VU LG 2 9
283. LG LG 7 14 b 200 250 CC LG 70 gt C LG 200 C LG O O O a 7 14 LG a 70 SC b 70 200 C c 200 300 PC d 300 C 143 Cc LG LG LG LG 7 LG
284. MgE 147 7 Reflectance Eagle XG n 1 51 Ideal AR layer n 1 23 122 nm 400 500 600 Wavelength nm 7 18 300 C 4000 rpm GLG 700 800 MgF
285. 500 1000 2000 3000 nm a b LG 97 Ri 3000 2500 2000 w o LG layer 1500 1000 500 Maximum scattering wavelength nm Particle diameter nm 6 5 LG 0 9 5 0 wl LG layer 0 0 500 1000 1500 2000 2500 3000 3500
286. 71 5 ug 10 E 5 s 107 5 5 lm OO 1020 1 2 10 10 Y wlo NP ZnO a 1 gt 10 wl NP ZnO 9 3 E 10 10 5 G SS 103 0 n amp 10 ITO thickness nm 5 16 ITO NP TCO AZO ITO ITO NP TCO ITO 10 Inm 12 cm2Vs 200 nm 5 cm7Vs TCO
287. AZO SSP 8000 rpm 16 cm27Vs 3000 rpm 26 cm Vs AZO SSP 8000 rpm o 1 7x 10 QOcm 3000 pm 1 0 x 10 Qcm AZO SSP LG AZO 6 18 8000 rpm LG AZO SSP AZO AZO
288. AZO SSP 6 6 a c AZO SSP SEM a b LG o AZO 6 6 a 6 6 b LG AZO 6 6 c AFM RMS 6 6 c 612 nm AZO RMS 7 nm LG
289. lt B Hs PHs Hot Wire CVD 6 Si 4 6 2 PECVD Hot Wire CVD Chemical Vapor Deposition 1 BB H CVD Plasma Hot Wire CVD PECVD TMP p i n 37
290. 111 6 EQE 400 600 800 1000 1200 Wavelength nm Flat AZO IQE 400 600 800 1000 1200 Wavelength nm 6 17 AZO SSP AZO uc Si H a EQOE b IQE RR 6 7 6 6 LG AZO SSP oo nc Si H FF
291. Mean SD 450 C 32 7 10 2 nm 650 gt C 96 1 42 5 nm NP ZnO SowW10 3mm 250 Ok SE W es el 5 8 a 70 b 450 c 500 d SS0 e 600 630 2C 1 NP ZnO SEM 64 ug 5 Particle diameter nm 400 450 500 550 600 650 700 Temperature C 5 9 NP ZnO
292. RMS NP ZnO NP ZnO 350 nm 5 7 b NP ZnO NP ZnO 550 nm 10 35 NP ZnO NP ZnO NP ZnO TCO TCO
293. Glass substrate with LG layer GLG LG GLG 500 nm 5 8 Reflectance 400 500 600 700 800 Wavelength nm 74 LG LG 8000 rpm 250 C 133 7 8 3 2 5
294. Si Transparent Conductive Oxide TCO TCO Si TCO 3 1 380 760 nm NSR
295. SiO LG 1 LG 7 14 c LG 200 300 LG LG 3 LG LG LG 200 C 300 C
296. 1000 nm AZO 1 0 AZO SSP v NN 6 16 AZO SSP AZO uc SirH ee AZO SSP 70
297. 5 10 NP ZnO RMS 65 5 ug NP ZnO NP ZnO NP ZnO RMS RMS b NE ZnO 5 11 a NP ZnO
298. ITO AZO ITO NP TCO TITO ITO 10 nm a 400 1200 nm 80 NP ZnO 25 ig NP ZnO 300 C X 550 Nt nm NP TiO NP ZnO NP TiO gt NP ZnO NP TCO 1 70 RMS 10 nm 1
299. rnp k k 1 gd g 1 T 7 coOS6r 1 7 2 uz oi gt 6o612 0 ll 7 7 2Xp C2 6 7 exp 4 tio 7 XP 6 3 0 amp 0 lt 41 4o tg to N IN 1 4 740 4 70 4 WV4o J 1 72 4 2 4 2 bt2 4z 42 7 4 XP 18 776XpCS 4 to XP 5 i 2 ll 2 12 7 1 127 7 to12 6o1 2 gt 6 75 Texp i 2k 1 8 7 3 k 1 To12 7o 701 o
300. sq Van der Pauw 1 TCO 10 Q sq f B Rsheet x evB 4 E x em eFy evB 0 50 4 17 v
301. 0 6 18 7 2 buffer a SiC H 2 50 53 10 TMP 0 6 10 1 a Si H 30 40 450 TMP 10 n ue Si H 2 5 1 3 3 2 50 RP TCO ITO 150 TMP Metal Ag 500 TMP buffer i MFC SiH4 B H NT H 210 CC ccm Si E E ITO Ag RF 1 Si 4 4
302. 6 4 sc stacked NP TCO Qc sins 86 5 Voc FF TCO S 6 TCO stacked NP TCO c FF 5 5
303. 7Max Tum 2m mn 4 4 1 Ps 2zg 2m 4 5 2nd 2m 1 m1 4 6 2 m 43 A2am xX A2mri 4 45 Ei A2mri 4 7 4 7 nd 4 7 1 d 4 8 4m A2myrt A2m 5 4 8 2 5
304. Si RP Si 4 CVD Hot WireCVD b 46 a Si b PECVD c Hot Wire CVD 38 4 3 2 4 3 3 Si PECVD Hot Wire CVD 4 3 2 PECVD
305. 1 10 LG void space x 7LG 1 X Nclass Xnair 7 13 130 7 LG me Air A 4 a Ms 1 a LG Y Re Void space 77Gjass x ue ZAir 7 2 7Ar Tarc 1 rarel 1 Rarc 7 14 Raa L
306. 1 30 1000 2000 3000 4000 5000 6000 7000 8000 9000 Rotating speed rpm 7 16 a 250 PC 300 CC LG b 600 nm LG b LG LG LG LG LG 4000 2000 rpm LG 2000 rpm LG 600 nm 23 1 40 LG
307. 130 133 135 136 138 7 5 7 5 1 300 CC 7 5 3 _ 7 5 2 8 141 144 148 150 152 154 155 1 1 1 4 o E 4 1960 2014 EH E 1 toe ton ofoil equivalent 1 toe 42 GWs
308. 4 6 4 7 4 7 1 4 7 2 4 8 X 4 8 1 4 8 2 4 8 3 Van der Pauw X X 4 9 4 9 1 4 9 2 s 1 1 f 5 2 5 3 3 1 3 2 5 4 1 5 4 1 5 4 2 5 4 3 5 4 5 ITO ITO TCO
309. AFM Root Mean Square RMS RMS AFM 1 7 RMS i dsr 4 11 J 0 4 7 TCO 1 H Resitest8300 Van der Pauw DC 7 48 Van der Pauw
310. Fourjunction or more concentrator Pontiscs a 40 Four juncton or more non concentrator Organccell various types Spectolas 5J cle Single Junction GaAs amp Organic tandem cells snap MM i Inorganic cells CZTSSe nye eyeial Quantum dotcel A Concentrator V Thin film crystal NREL Spectola LM RGJSE Crystalline Si Cells japan Spectrolab ea 32 Single cystal concentrator NR SUPM WE su os OA OR OR MG V NRE a 6 pm icrystall dboud U gt 28 ThickSifim 2059AA P Amonk Wao Silicon heterostructures HIT NREI V Thin iim crystal ntc ae WW h Radboud 24 Shar Stuttgart ages United Solar aSiincSiincSi 6 RCA PbS O 1975 1980 1985 1990 1995 2000 2005 2010 2015 1 4 Si Si o 9 Bi 1 2 1 5 pin Si Si
311. S S Kim K S Lim J Appl Phys 95 1525 1530 2004 9 V 670 2010 10 K C Krogman T Druffel and M K Sunkara Nanotechnology 16 2005 S338 S343 11 P Tao Y Li A Rungta A Viswanath J Gao B C Benicewicz R W Siegel and L S Schadler J Mater Chem 21 2011 18623 18629 12 M Bass Handbook of Optics Vol 2 McGraw Hill 1994 13 S Tanemura L Miao P Jin K Kaneko A Terai and N N Gabain Appl Surf Sci 212 213 2003 654 660 14 M Mizuhashi Y Gotho K Adachi Jpn J Appl Phys 27 2053 2061 4 15 166 pp 320 321 2008 16 pp 240 246 1999 17 V D Cullity Elements of X ray Diffraction Addison Wesley Reading MA 1978 18 PC SmartLab axis motion 19 pp 43 46 2001 56 5
312. Wavelength nm 6 22 NE GR AZO SSP c Si H AZO i ER Cs TCO Si TCO TCO TCO Si 7 TCO TCO TCO Si Si TCO Si Si TCO i 6 22
313. rpm AZO SSP SEM RMS AZO SSP SEM AFM RMS AZO SSP AZO SSP RMS 335 nm 8000 rpm 163 nm 2000 rpm LG 2000 rpm AZO SSP LG AZO b LG
314. 2 1 4 2 2 Voc XIsc Xx FF yx100 2 4 Pin 2 Si 2 1 3 3 2 3 A NO ni Z Rm Si p n SE EE pn a ferp 2 1 2 5 ql V RA 7 RA 7 7 Q 6 PA to_o 2 4 ab
315. PECVD Si SiH4 SiH4 SiH4 SiHz SiHa SiH4 SiHs a Si H Si Si SiH 4 7 Si SiH SiH4 Si SiH4 SiH4 Ss
316. TCO ITO 2 Fk NP TCO NP TCO ITO NP ZnO ITO 10 nm 5 4 5 ITO TCO NP TCO 5 19 ITO 10 nm Asahi VU NP TCO SEM SnOz EF
317. TiOz NP ZnO stacked NP TCO Asahi VU 84 5 1 stacked NP TCO 500 1200 nm 80 NP TiO gt 400 700 nm NP ZnO nw 1 55 600 nm AZO 7 1 9 600 nm NP TiO z 1 7 600 nm NP TiO NP TCO
318. gt lt Gifu University Institutional Repositry Tite H H H H H H HH Fu HHHHHSIHHHHHH Author S SS a HH H HH 479H lssue Date 2015 0 25 Type OO Version ETD URL http repository lib gifu u ac jp handl e123456789 51037 Si Improvement of photovoltac performance of thin film Si solar cells by forming optical structures on glass substrate 27 3 March 2015 Shuhei Miura 1 1 1 1 2 1 3 2 Si 2 1 2 1 1 pn 2 1 2 2 1 3 2 2 Si 2 2 1 pin 2 2 2 2 2 3
319. 0 8 1 Voltage V 7 10 LG Asahi VU a Si H LG 250 gt C 6000 rpm 7 1 LG Asahi VU a Si H LG Jsc mA cm2 Voc V FF 7 Aeoo 15 13 0 94 0 63 8 93 6 0 13 66 0 94 0 62 7 93 8 4 139 7 100 80 60 EQE 40 20 0 300 400 500 600 700 800 Wavelength nm 7 11 LG 100 A 7 11 LG 7 9 100 R LG
320. 00 1200 nm 80 300 1000 nm 1 3 AZO SSP AZO 6 7 b 0 400 500 600 700 800 900 1000 1100 1200 100 80 60 40 Haze value 20 Wavelength nm w o AZO film _w AZO film 0 400 500 600 700 800 900 1000 1100 1200 Wavelength nm 6 7 8000 rpm AZO SSP a AZO SSP TLG b AZO 101 AZO 6
321. 000 nm 30 wt 2 1500 rpm LG Liquid glass G type 2000 8000 rpm 70 C 2 450 C 2 AZO 1000 nm 4 1 1 AZO SSP a AZO SSP AZO SSP 6 18 LG 113 6 RMS 264 nm gOS 5n 10 EN 6 18 LG 4 8000 4000 c 3000 d 2000
322. 100 4 4 3 gt 0 4 mm 4 5 5 a Si 1 H
323. 106 6 AZO SSP 6 14 a AZO SSP 22 44 A AZO SSP i AZO SSP 22 35 35 6 14 b 500 nm 900 nm
324. 2000 3000 nm AZO SSP AZO SSP AZO SSP AFM AZO SSP RMS 6 11 AZO SSP RMS AZO SSP RMS LG 6 10 AZO SSP SEM a 8000 rpm b 6000 rpm c 4000 rpm d 3000 rpm e 2000 rpm
325. 3 26 b _ or TcO a b 3 3 4 TCO a b TCO SEM a Si H 2 8 200 00 nm 22 23 3 4 TCO Hongsingthong TCO SEM 23
326. 6 9 SEM SEM 102 E 6 8000 rpm 1300 rpm 22 44 6 8 SEM a 8000 rpm b 6000 rpm c 4000 rpm d 3000 rpm e 2000 rpm 1300 rpm 30 wt Cover ratio 2000 4000 6000
327. 7 775 782 1954 6 P Grosse F J Schmitte G Frank and H K6stlin Thin Solid Films 90 309 315 1982 7 J R Bellingham W A Phillips and C J Adkins J Mater Sci Lett 11 263 265 1992 8 H lida N Shiba T Mishuku H Karasawa A Ito M Yamanaka and Y Hayashi IEEE Electron Device Letters EDL 4 157 159 1983 9 T Nakada Y Ohkubo A Kunioka Jpn J Appl Phys 30 3344 3348 1991 28 3 3 10 W W Wenas A Yamada M konagai K Takahashi Jpn J Appl Phys 30 L441 L443 1991 11 Q Huang Y Liu S Yang Y Zhao X Zhao Sol Energy Mater Sol Cells 103 134 139 2012 12 H Zhu J Hupkes E Bunte J Owen S M Huang Sol Energy Mater Sol Cells 95 964 968 2011 13 W Bottler V Smirnov J Hupkes F Finger Non Cryst Solids 358 2474 2477 2012 14 H Sai M Kondo Appl Phys 105 094511 2009 15 J Muller B Rech J Springer M Vanecek Solar Energy 77 917 930 2004 16 O Kluth G Schope J Hupkes C Agashe J Muller B Rech Thin Solid Films 442 80 85 2003 17 S J Tark M G Kang S Park J H Jang J C Lee W M Kim J S Lee D Kim Current Applied Physics 9 1318 1322 2009 18 131
328. 742 76 rsexp i2kB 7 4 k 1 x lt 1 lTx x2Tx3 1 1 x 7 3 7 4 fo1 26XP 1 7o7n26Xp 72 3 to12 toitior126exp i2p 1 Tor12exp i28 9 7012 701 Y Y 3 iao 1 ro rzoi rio tort12exp ip 7 7 1 7617726X 72 to12 7o 26 72 7 8 1 7617726X 72 7012 jz gt 0 p s 1 12 ER EA a Ry 1 442 2ro1r412 cos 28 AR 7 9 0
329. 8000 Rotating speed rpm 6 9 6 8 SEM 103 6 6 6 2 AZO LG AZO AZO SSP AZO SSP a 6 10 AZO SSP SEM 6 8 SEM LG AZO
330. C 1 NP ZnO 8 9 NEP ZnO RF AZO AZO 4 1 1 5 3 TCO NP ZnO 59 5 5 3 1 NP ZnO 8000 r
331. E Vo In3 Sn Sn 23 3 3 Sn Sn e 3 4 3 4 Sn Sn Zinc Oxide ZnO 1 2
332. G LG Raga LG LG A 4 Raic 4 1 Rars D R a 4 7 15 7 15 7 15 LG 7 void ratio x
333. ITO 4 5 x 100 cm3 GTO 10 nam 1 8 x 101 cm3 ITO 200 Inm AZO ITO ITO AZO 2 0x 1020 cm3 ITO ITO ITO n ITO NP TCO
334. ITO thickness nm 5 15 ITO NP TCO ZnO 002 AZO ITO b ITO NP TCO 5 16 ITO NP TCO ITO AZO ITO AZO 800 nm ITO NP TCO ITO NP TCO
335. K7 7 7 4 2 LG 7 6 2000 3000 4000 6000 58000 rpm GLG LG 250 C LG LG 3000 rpm 2000 rpm GLG 8000 pm GLG 6
336. Poc V FF 7 4 Stacked NP TCO 12 0 0 963 0 56 6 41 Asahi VU 13 7 0 937 0 56 7 16 Flat AZO 10 2 0 975 0 56 5 56 NP TCO 0 963 V Voc Asahi VU Voc 0 937 V 30 mV E Voc Flat AZO stacked NP TCO Voc NO Si sc 0 sc stacked NP TCO Asahi VU 13 7 mA cmz Flat AZO 2 sc 10 2 mA cm2 1 8 mA cm2 mm FF 0 56 stacked NP TCO Flat AZO 15
337. Research Cell Efficiencies http www nrel gov ncpv images efficiency chart jpg 10 2014 04 10 http panasonic co jp corp news official data data dir 2014 04 jn140410 3 jn140410 3 html 11 1 pp 140 150 2013 12 pp 46 48 2001 13 H B T Li R H Franken J K Rath R E 1 Schropp Sol Energy Mater Sol Cells 93 338 349 2009 14 J Muller B Rech J Springer M Vanecek Solar Energy 77 917 930 2004 2 Si 2 Si Si pn Si a Si H nc SiH
338. Sol Cells 119 94 111 2013 11 H lida N Shiba T Mishuku H Karasawa A Ito M Yamanaka and Y Hayashi IEEE Electron Device Letters EDL 4 157 159 1983 12 K Sato Y Gotoh Y Wakayama Y Hayashi K Adachi H Nishimura Rep Res Lab Asahi Glass Co Ltd 42 129 1992 13 T Minami H Sato S Takata N Ogawa T Mouri Jpn J Appl Phys 31 L1106 L1109 1992 14 T Nakada Y Ohkubo A Kunioka Jpn 7 Appl Phys 30 3344 3348 1991 15 W W Wenas A Yamada M Konagai K Takahashi Jpn 7 Appl Phys 30 L441 L443 1991 1 2 3 4 5 16 Q Huang Y Liu S Yang Y Zhao X Zhao Sol Energy Mater Sol Cells 103 134 139 2012 17 H Zhu J Hupkes E Bunte J Owen S M Huang Sol Energy Mater Sol Cells 95 964 968 2011 18 W Bottler V Smirnov J Hupkes F Finger Non Cryst Solids 358 2474 2477 2012 19 H Sai M Kondo 7 Appl Phys 105 094511 2009 20 J Muller B Rech J Springer M Vanecek Solar Energy 77 917 930 2004 21 O Kluth G Schope J Hupkes C Agashe J Muller B Rech Thin Solid Films 442 80 85 2003 22 S J Tark M G Kang S Park J H Jang J C Lee W M Kim J S Lee D Kim Current Applied Physics 9 1318 1322 2009 21 3 3 3
339. ZO SSP a 700 nm AZO SSP 900 nm LG 8000 rpm 2000 rpm 82 66 AZO SSP LG 90 LG RMS bz 3 700 nm AZO SSP
340. m 0 0 2000 4000 6000 8000 10000 Roatating speed rpm 5 4 NP ZnO Ga Cb 67 3 nm 31 9 nm Count Dao 3 S50 oksEW UN 0 50 100 150 200 Partcle diam eter nm 5 a 550 C NP ZnO SEM RMS b NP ZnO c NP ZnO 5 6 1100 nm 8000 rpm NP ZnO NP ZnO 80 2000 nm
341. pm 1 1500 2000 3000 4000 6000 330 C E 1 a SEM NP ZnO 5 4 NP ZnO E NP ZnO RO EE 1500 rpm 3800 nm NP ZnO 8000 rpm 1100 nm
342. termnational Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials Nagoya Japan March 2 6 2014 05pP31 Poster S Miura K Suzuki S Noda S Nonomura Smooth surface stacked metal oxide nanoparticle TCO substrate with strong hght scattering European Materials Research Society 2014 Sprmg Meetng Lille France May 26 30 2014 YP2 21 Poster S Miura K Suzuki S Noda S Nonomura hmprovement in the light scattering property of TCO substrates by metal oxide nanoparticle layer Grand Renewable Energy 2014 Tokyo Japan July 27 August 1 2014 P Pv 3 9 Poster 1 ZnO Al 2012 73 2012 9 11 14 12p C11 7 RF ZnO Al 2013 60 2014 3 27 30 28p A4 2
343. ubstrates using spherical silica particles and sin on glass for thin film Si solar cells Materials Transactions accepted for publication 1 S Hori T Suzuki T Suzuki S Miura S Nonomura Effects of Deposition Temperature on the Electrochemical Deposition of Znc Oxide Thin Films from a Chloride Solution Materials Transactions 55 724 734 2014 1 2 3 H Natsuhara S Miura K Hori T Kumazawa Y Noda Z Xiang Qu F Ohashi N Yoshida and S Nonomura Preparation of p type NiO film for a Si solar cells The 25th Intermational Conference on Amorphous and Nano crstalline Semiconductors Nara Japan August 21 26 2011 4C1 1 Oral S Miura M Tashiro K Suzuki and S Nonomura Study on textured ZnO Al thin films prepared by RF magnetron sputtering with water steam The 25th Tnternational Conference on Amorphous and Nano crstalline Semiconductors Tront Canada August 18 23 2013 Tu C2 3 Oral S Miura S Hori M Tashiro K Suzuki and S Nonomura Smooth light scattering TCO substrates for thin film Si solar cells by using Nanocrystalhne 155 oxide particles 23 d International Photovoltaic Science and Engineering Conference Taipei Taiwan October 28 November 1 2013 2 P 28 Poster S Miura M Tashiro K Suzuki S Noda S Hori and S Nonomura Optical and electrical property of AZO film prepared on ZnO nanoparticle layer 6 In
344. ul 1 112 AZO SSP AZO SSP 6 LG AZO SSP uc Si H 6 3 AZO SSP AZO SSP 1300 rpm LG 2000 100 6 7 1 LG 3000 4000 8000 rpm AZO 0 nm 6 3 LG AZO SSP 2
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