平成23年度修士学位論文 Si 基板上金属薄膜の光学定数と
Contents
1. 55 7 7 1 2 1 a b Fig 7 12. Zn Zn nm SE 10 nm Zn Cu Zn Cu Zn Cu Zn Zn 2320 Cu Zn Zn 420 Cu 1083 Zn Cu Zn 10 nm Zn Zn
3. photoelectron spectrum AES 3 5 2 XPS XPS Table3 5 X
4. Fig 3 6 1 9 1 ELLS X 2 2
5. 2eV 36 1 CRTM 6000 2 3 S Adachi Optical Constants of Crystalline and Amorphous Semiconductors Numerical Data and Graphical Information Kluwer Academic Boston 1999 4 D E Aspnes in Optical Properties of Solids New Developments edited by B O Seraphine North Holland Amsterdam 1976 p 799 5 R M A Azzam and N M Bashara Ellipsometry and polarized Light North Holland Amsterdam 1977 6 M Erman J B Theeten P Chambon S M Kelso and D E Aspnes J Appl Phys 56 26
6. Bu h 1 A Z W pi AH xk e cs X P
7. a Q9 9 9 9 90 9 L or2 Lior 2 Photon Q Photoelectron Fig 3 5 a b 15 3 6 Photoluminescence PL 3 6 1 Luminescence Photoluminescence
8. SE 1 2 Zn 1 1 SEX LTOS y ZnO 7 Zn Bi 2 i i
9. 3 1 2 SE tan P A 5 ei zss 1 2 Snell p 1 2 n oni n sing 2n sin Snell 3 1 T E _ 2 COSQ M COSp 3 2 s E m coso n cosp S E ULOS
10. Bi Fig 5 10 S Si Bi Bi Bi Da Bi 7 SEM 5 10 Fig 5 11
11. E E TE Ro JI Si Cu Zn 4 5 1 Bu e 1 6 7 Cu Zn Cu Zn EPMA MA L4 CRTM 6000 Zn Cu Zn z 4 XPS HEZITO WRIA LTO ODER 24 i Zn 1 Ci T L D SE
12. Zn kg g Zn 10 nm 1 6 2 Bi eT 1 25 eV Si Bi Bi SE AFM EMA
13. x Bi 1 Bi 2 2
14. Zn Cu Zn EPMA XPS 26 4 4 EPMA Intensity counts Wavelength A Fig 4 1 EPMA Fig 4 1 EPMA 9nm 0 6 nm min 40 min Fig 4 1 Si Cu Zn Zn Cu 9 nm
15. UINE U r afr bjr 3 32 NanoScopelll AFM NM _ Fig 3 3 AFM
16. 1 Si Zn Alpe WW V kY SE EMA 2 Sid Bi dir EUR SR EIC Bi SE Zn EMA HF H202 1 H S Jang D H Choi Y S Kum J H Lee and D Kim Opt Commun 278 99 2007 2 J G Lu T Kawaharamura H Nishinaka Y Kamada T Ohshima and S Fujita
17. E Fig 3 6 1 a amp T 1 b FE ree exciton FX c BE bound exciton BE d e
18. 1 2 nm min AFM 4 Rig 4 3 E 10 nm 20 nm 30 nm Fig 5 1 SE Fig 5 2 AFM rms Fig 5 3 20 nm AFM 7 AFM 40 To T T T T 20L O 10 nm o O 20nm 10L 30nm B o O 40 nm E 5 Oo OF 10 l 1 l 1 E eV Fig 5
19. j gt 1172 1 2 b E ts ELI ES 1 2 1 2 e eerie m 4 4 4r f go ONG 4 5 nao 1P e KE m Ina ce 4 6 4 E eV Fig 4 10 Zn 35 0 2 o cm a Fig 4 10 4 4 4 5 4 6 E eV Fig 4 11 Zn D a b Zn E MERT Hig 4 11 a amp Zn 4 83 SE H
20. E FEL 16 0 DAP Fig 3 6 1 a 0D a E2 E Si 1 5 meV
21. IEMA 3 2 2 FE Lorentz sin Fig 3 2 El Ld E 2zrsin 7 Pcos cos N 4xP 3 3 22 Pcos0
22. PVD MS S FHig 2 1 Fig 2 1 1 Company profile 3 4 Zn SE X XPS EPMA AFM 5 Bi SE WE AFM PL
23. 3l a 10 b 10 c 10 4 2 i Zn 1 a c 2 Rig 2 1 3 Cu Zn EXSg Fig 2 1 JR Eo e e
24. rms 9 856 nm 20 nm Bi EMA Bi 42 5 4 Ambient air Roughened Bi 9 856 nm f 67 10 144 nm Si substrate Fig 5 4 4 Fig 5 4 4 Bi Bi Si RE pud did M aoi ek 4 EBMA EMA void Zn 2 Ea AA Bruggem
25. 3 AFM rms root mean square 4 SE AFM EMA rms 5 SE EMA Zn Table4 1 Table4 1 P Si 100 1x1 cm Cu Zn W 5X 10 torr 19cm Zn 10 nm Density Zn 7 14 g cm Z RATIO Zn 0 514 1 2 25 4 3 Cu Zn Zn Cu Zn Zn Zn 99 9 90
26. LET Qc IW lt 68
27. STM STM 3 3 2 AFM 2
28. Bi 50 nm HF 30 N Si 100 1x1 cm 10 min 20 ml H202 3590 2 5 ml Bi 50 nm HF 30 N Si 100 2x2 cm 1 min 20ml H202 35 2 5 ml 35 mA Fig 9 a b 48 a Xe lamp Coldmirror Optical Filter b i Xe lamp Platinum electrode HF Solution O ring In Ga alloy Si Substrate back contact Fig 5 9 g 49 JN o 5 9 PL 2 PL Bi Si N Si
29. 4 4 45 3 11 E cosM sin M exp in V exp cosM expo sinM cos 3 12 sin o 45 1 0 ali 2 I IE Io D 4 sin 29 sin Asin cos2 sin 2M sin 2 cosAcos2M cos 3 13 Ig 1 S sin C5 sin 2M S cos2M cos Me45 b 4 505 585 5 Fig 3 1 2 M 45 mig 3 1 2 PSMA PMSA I t Ig t ta sin a cos 3 14 P M M 4 go Qt 1 cos2Y cos2A cos2 P M cos2M cos2A cos2VY m 3 15
30. 100 Fig 5 11 Si do Si Bi Bi 51 a Si photo etching b Bi photo etching c Bi stain etching Fig 5 12 Fig 5 12 Si Si b Bi c gt b a Fig 5 11 AKU Rig 5 11
31. 5 Fig 3 6 2 PL Table 3 6 He Cd Laser Fig 3 6 2 PL 17 Table 3 6 PL He Cd LASER IK3302R E 825 nm 3 81 eV 30 mW UTVAE 84U UTE 84U Gt 15 cm SP 2156 2 input 1 mm output 2 mm CCD PIXIS 100B 2 id Lr EL Ha mu W 18 3 7 EPMA 3 7 1 Electron Probe X ray Micro Analyzer Ws LC EPMA X GBe ez
32. 60 7 5 SEM 5 Si Bi SEM SEM a Si photo etching b Bi photo etching c Bi stain etching Fig 7 6 SEM a Si photo etching b Bi photo etching c Bi stain etching Fig 7 7 SEM Fig 7 6 Fig 7 7 SEM 10000 Fig 7 6 amp 8i Bi E Si 3
33. Si E Si Table 5 3 _ Si photo etching Si stain etching Bi photo etching Bi stain etching photo etching Si photo etching Bi stain etching Bi 800 900 1000 Wavelength nm Fig 5 10 50 Table5 3 Fig 5 10 Table5 3 Bi Bi Si
34. ig 8 7 2 X 1 50kV 40 1u m 100 m 10 10 Pa SE E 19 Fig 3 7 2 EPMA 20 3 8 Scanning Electron Microscope SEM Zt 3 8 1 Gcanning Electron Spectroscopy SEM
35. D 4 FRE X Gil X X b X 6 7 E
36. lt Bi Si cC Bi Bi Si Fig 7 7 a e 61 K
37. Table3 5 XPS UPS PIES XPS UPS PIES MgK 1253 6 eV He II 40 80 eV He2 S 20 62eV AIK 1486 6 eV HeI 21 22 eV 23S 19 82 eV Nel 16 85 eV Ne 3P 16 72 eV 16 67 eV Pa 16 62 eV X E hv E 9 3 34 CREND LIC edifET rcv 088OHIGEBEECC 5 Er 14 0 XPS EO 2
38. LED ITOmdium Tin Oxide ZnO SnO 1 4 o LSI Spectroscopic Ellipsometry SE Photoluminescence PL
39. Si 2 PL 54 WE AFRA SEM Bi Bi Bi 2 8i Si Bi Bi 2 2 1 25 eV
40. 6 AARTE ok D 4 X 7 O Fig 3 8 1 SEM 21 3 8 2 SEM CRT Fig 3 8 2 SEM Fig 3 8 2 SEM 50 umo 3 100 A 2 2 C CRT CRT 2 CRT
41. 1 Company profile Hig 7 6 62 LET LET
42. cos0 3 22 L 3 22 CGS Nig 8 2 MKS 4n l eo E zPI 3z9 72 5 P E qp 3 23 350 EXu5 8 WUAO4NXSKE amp SRAE E DUESRALC2SDT LLIG S 4445 PEN Ep N a P Ep 3 23 Pa NR 3 24 Beg 3 24 1 Clausius Mossott E amp E e l E Na 3 25 E 2 3e 10 2 2 e l 1 2 3 amp
43. 3 6 tant A 12 Fiz 23 a b Fig3 1 1 7 3 1 3 SE KIZ SE SE Fig 3 1 2 Lou AK A RC MMMR OM SRC P PE 3 9 1 0 M 3 10 0 3 9 Hi jl cos A M Ss 0 cosM ele G 11 0 0 O sin A M cos A M O exp6O sinM cosM cos
44. fe lf 0 3 30 g 2e5 82 1 ANI ea g 3 2 3 Linear Regression Analysis LRA EMA o N E Yon tane osae cosAw 3 31 tanW cosd b tanp costi EMA M P 11 3 3 Atomic Force Microscopy AFM 3 3 1 Binning AFM STM
45. Ambient air Roughened Zn 10 nm 4 6 nm f 6796 5 4 nm Fig 4 7 Fig 4 7 4 Zn ZnSi LRA 4 EMA EMA void Zn 2 Bruggeman EMA 2 9 LH z Em 0 G 1 e 25 Em 25 f Pd 1 4 2 TIT fQp ctdvero3i3z v voids Zn bulk Zn gs 4 Zn AFM rms Zn AFM
46. 1 3 25 Lorentz Lorentz LL GE x Ea 1 y 1 1 b 2 2 2 g gz 5 LL g 3 27 N a N a 3 26 3 27 E E En y En I 3 28 26 fa 26 l fis eae Maxwell Garnett MG eme e E E E E a 1 b a 3 29 26 A 2g MG ep e MG g e g Brugsgeman 3 28 ee a EMA
47. XRD Fig 7 4 Si 100 Si 100 Bi 006 Intensity arb units 20 30 40 50 60 2 0 deg Fig 7 4 XRD Bi XRD Bi 60 nm 20 69 5 Si 1000 Bi Bi 006 2 9 71 9 Bi 009 i 20 22 5 Bi 008 2 9 46 1 Bi c Rhombohedra Bi 50 nm XRD Hig 7 4 Si E Bi c
48. 12 3 4 X X Ray Diffraction XRD X XX X Bragg AJAN K X LUC oxf Vg Ze BUR L TORE Z H fig 3 4 2d sinO n 3 33 d 9 Fig 3 4 Bragg Bragg
49. Zn 10 nm rms 4 6 nm EMA void 67 Hig 4 7 HL SITED void 32 4 7 EMA 20 T 40 E2 Fig 4 8 SE 10 10 Zn SB A O Zn EMA 20 30 20 10 Zn SE SS rs 7 O Zn EMA 1 2 3 4 3 E eV Fig 4 8 EMA E EMA EMA 10 nm rms 4 6 nm void 67 Sh E Di SE EMA 33 4 1 4 2 Zn 4 8 Zn 80 4 40 80 120 160 L qe ii 0 05 10 15 20 25 30 E eV 0
50. SEM EY SUI 8 1 Spectroscopic Ellipsometry SE 9 1 Spectroscopic Ellipsometry SE SE 1H SE SE 3 1 2 SE 3 1 3 SE
51. I hv E E Maxwell Boltzman I hv hv req a ES Eo 3 37 e um T REPE REN c DAP
52. O i Q Bi HF H202 2 3 PL 4 SEM Table5 1 i P Si 100 1x1 cm Bi 99 99 W 5x10 torr 19 cm Bi 20 nm Density 9 78 g cm Z RATIO 0 79 Table5 2 i N Si 100 2x2 cm Bi 99 99 W 5x10 torr 19 cm Bi 50 n
53. n E k THig 5 8 a Zn 5 3 5 4 5 5 5 6 n E KE a E R E 2 eV g 2 I 2 47 5 8
54. 59 7 4 AFM 5 10 nm 20 nm 30 nm 40 nm 50 nm Bi rms 20 nm 20 nm a 10 nm b 30 nm c 40 nm On Fig 7 5 Fig 7 5 rms 10 nm rms 2 958 nm Bi 50 nm rms 25 788 nm SE m
55. Table 7 1 min torr 1 1 30E 04 2 9 50E 05 5 5 40E 05 10 2 70E 05 15 2 10E 05 20 1 70E 05 25 1 40E 05 30 1 20E 05 40 9 80E 06 50 8 20E 06 60 7 50E 06 70 6 30E 06 80 5 80E 06 90 5 50E 06 100 5 00E 06 57 7 2 XPS 4 Cu Zn Zn EPMA EPMA XPS x105 g Cis 31 09 gf Zn2p3 10 8896 f Zn3p 27 06 74 Cu2p 0 0096 2 Ols 30 97 i 1000 80 600 40 20 0 Binding Energy eV Fig 7 3 XPS Fig 7 3 Cu Zn Zn XPS Cu EPMA Cu Zn Zn Cu 58 T3 XRD Bi
56. Bi si ar Wr 2 Rig2 1 3 Bi Fig2 1 4 5 CRTM 6000 Bi D yu o C SE MA S 8 AFM 9 SE MOT EMA gui 10 SE EMA 6 Bi rms root mean square AFM rms Bi 38 i
57. Fig 7 1 100 Pa 0 1 10 5 Pa Fig 7 2 Table 7 1 Pa torr torr zx 56 X m torr gt ce 20 40 60 80 100 min Fig 7 2
58. EMA EMA 20 nm rms 9 856 nm void 67 SE EMA 1 2 Bi Sh 44 gt 20 Bi 10r 1 T 10 Bi SE O Bi EMA Bulk Bi 20 2 3 E eV 50 40 a 30 tQ 20 Bi SE o Bi EMA Bulk Bi Fig 5 6 Bi Fig 5 6 ii g1 1 5 eV g 2 SE fH TN Bi
59. 1992 3 X 1979 4 XPS 5 2 2004 6 ddkHIB oEMZS Z7WWAEROd C 1992 mr om 7 1976 23 4 Zn 4 1 Si 100 SE
60. b c b PL b c Bi D RELE Bi oc 52 1 CRTM 6000 2 3 S Adachi Optical Constants of Crystalline and Amorphous Semiconductors Numerical Data and Graphical Information Kluwer Academic Boston 1999 4 J A Woollam Japan Ellipsometry Solutions 5 J Phys Soc Jpn 77 No 1 2008 014701 6 J Phys D Appl Phys 39 2006 4572 4577
61. 1 XPS 7 XPS 4 MM aA I loi NK 3 35 N LojAK 3 36 N I jo AK 7 XPS shake up shake off
62. Bi Bi HF H202 2 10 nm 20 nm 30 nm 40 nm 50 nm Bi 3 SE AFM 20 nm Bi EMA Bi Bi E IRE 50 nm Bi 2
63. IN 1
64. 10 nm CRT 10 cm 1 10 10 SEM uu 1 TE 22 1 2003 2
65. ge 2 e2 E 45 5 7 n E k E E RE Bi n KA lt AE e ei ez 5 n E le Ey t Ey 172 1 2 E KC le E e E 2 4 aE k E A 2 2 RG nCE zii i EE nCE P k ERTO 1 E eV Fig 5 7 Bi 46 Dh 5 3 5 4 5 5 5 6 2t J V A l Z amp a Q cm 2 3 4 5 E eV 30r b 20 10 1 1 1 1 g 2 3 4 5 E eV Fig 5 8 Bi b Fig 5 7 Bi
66. 2 3 Si Si SEHR LM qe Co E RS EST CR 1 1E US EE 1 I ULP H Roes aset ied E Oh den nue eaque etd aolet E Ve qe 2 c Ds aicut ete pU t Dash Meca E 3 LR E fr 4 DON KI Cc MMT 4 Ex 9 cp 5 3 Bu eO Ser SEN ME auct D Seide a Pe pl Ep etre 6 9 6 3 1 1 SE O EFRI E 6 ZAE SB OREI oa E A E A e OE odd iia E G 8 3 2 Bruggeman Effective Medium Approximation EMA sese 10 3 2 Vd UD E A atte T E T 10 ROREM Lp pr M 10 3 2 3 Linear Regression Analysis LRA ki 11 3 3 Atomic Force Microscopy AFM 12 923 12 3 3 2 AFM 3 4 X X Ray Diffraction XRD kk 13 3 5 X X ray Photoelectron Spectroscopy XPS 14 SERIE OO ER 14 3 7 2 EPMA 3
67. A H d I FH HH Zn pl RIVE CIR Bi Zn 6
68. Zn 3 EPMA XPS 4 5 SE AFM Spectroscopic Ellipsometry SE 1 25 5 4 eV es gi jgz SE KK LT AFM rms root mean square EMA Zn nE
69. Zn Si EPMA H Fig 4 2 10 nm 0 3 nm min 60 min BA 1 i 27 c c Intensity counts Fig 4 2 4 Wavelength A Fig 4 2 EPMA Si Zn Cu Zn Cu Zn Qd SE zp 7 HH Cu AY 3E jvvcfES 3 TWX Cu Zn Fig 4 2 ig 4 1
70. sin2AcosAcos2 P M sin 2 sin 2M a sin 2 P M sin2Asin2V sinA 3 16 sin2 P M cos2 cos24 sin 2M sin 2ZAcos2M sin 2 cosA 3 17 3 14 sind cos sin o sin 2J F sinot m 0 3 18 3 19 cos Jy F 2J F cos2ot m 1 7 138 7g 0 27 F 21 04 27 F 0 86 A A e E e E i gz tan cos 2V sin 2 sin A 2 2 2 5 2 E n k zn sin l pum 1 sin2YcosA 3 20 2n sing tan d sin 2 cos2V sin A 3 21 2nk 3 1 sin 2 cosA QWD Fig 3 1 2 SE 3 2 Bruggeman Effective Medium Approximation EMA 3 2 1
71. O SE E 1 5 eV Fig 4 5 2nm 10nm 2 SE 30 ERER T g 1 g2 E eV Fig 4 5 SE Fig 4 6 Zn AFM Fig 4 6 Zn 10 nm 1X 1 um AFM Zn rms root mean square 4 6 nm AFM rms EMA LRA H 31 4 6
72. Zn 99 999 2 Zn Zn 420 Zn Zn mig 2 1 Fig 2 1 2 3 nm SE 10 nm nm
73. 1 SE 30 40 50 nm Fig 5 2 rms 41 Fig 5 8 AFM R 20 nm Fig 5 1 a5 L KE 10 nm g 2 Fig 5 2 rms Fig 5 3 Bi
74. 7 M Yamamoto and J Watanabe Sci Rep Res Insts Tohoku Univ 3A 165 1951 58 6 6 1 Zn Si Zn Zn SE AFM Zn h EMA Zn Cu Zn Zn 10 nm Zn 10 nm Zn SE EMA Zn
75. HE cosp 3 3 12 E n coso n cosp mi Ez amp 2n cosg 3 4 re E njcosQ n cosQ E 2n cos 3 5 E n cos n cos s Ep Ey Eo Es En En p s 2 Fresnel Fresnel p n5 n ths tiz Cb 5 p gt IR RI A A A R n p expi A 4A tanY expiA 3 6 RS A SE 3 tan p RIOR A Fig 3 1 1 b 2 3 Fresnel 3 2 3 9 AZ nb rff expC RPO 1 nb rA expCi 3 7 m n COS 378 8
76. J Crystal Growth 299 1 2007 3 X Zhi G Zhao T Zhu and Y Li Surf Interface Anal 40 67 2008 4 D Ganz G Gasparro and M A Aegerter J Sol Gel Sci Technol 13 961 1998 5 2003 6 J Phys Soc Jpn 77 No 1 2008 014701 2 4 Zn 2 1 Ern Z A s NN PVD CVD 1 on E Jule 2 1H uv KE T TERES C SER OT 5 Bi
77. X ray Photoelectron Spectroscopy XPS 3 5 1 Hel 38 4 nm 21 2 eV ulraviolet photoelectron spectroscopy UPS AlKa MgKa X XPS electron spectroscopy for chemical analysis ESCA auger electron spectroscopy ABS UPS meV Zzero kinetic energy ZEKE threshold photo electron spectroscopy 1 meV XPS 0 5 1 eV
78. 05 10 15 20 25 30 E eV Fig 4 9 Zn Fig 4 9 SE EMA Zn Graves Zn 7 g1 e2 Zn Zn 34 4 9 n B KA z RE Zn D WARK KAD WUR e RE e gi ie 5
79. 64 1984 7 J Opt Soc Am Graves 58 128 1968 37 5 Bi 5 1 Bi 4 4 1 Bi 3 a 10 b 10 c 10 d 1 Bi 5 2 Bi HF H T ROBUIRDGUR 1T 2 i Bi 1
80. 8 1 SE SAEN A ONE EE 16 CER 7ouyT4VYEPMA YB E ueste erret een herren ensi 19 ER 19 Scanning Electron Microscope SEM 21 3 892 SBM 22 Eu RENE RE D T TM 23 m4 ncs S E A dee EN EE E NEFAS ER EUR 24 qq E E ATEA cA E MH A M eU EEEE died 24 EEUU UU STEUERN 24 CO Ch SE 26 4A EPMA E 27 4 5 SE AFM 29 4 6 7 Jv ARV O3 e FT ER OO EB essem Hm 32 457 EM E AE T dues MU MM E M EM PE I EU P Su 33 4 8 Zn 34 4 9 n E k E a E 35 to pa jM MO EET 37 Wm BEP PESE eset enia riae treo rh ANE Fee Ee EUNYTRTPVSEENUN EUR eu ETI EVER ATE A VERAS 38 5 1 Bi O 38 cl m EI 38 5 3 SE AFM 40 5 4 43 DOMINE RR 44 5 6 Bi 45 5 7 n E KE E Z XZ 46 Sd Ae IIBER ARNQWEREUFAUTa BESITZE gemere 48 SOC PES elu ta cussu
81. U rm 0 001 w 100 EPMA 4 Q 3 4 3 7 2 EPMA Fig 3 7 1 EPMA EPMA Fig 3 7 1 X YOK ER Z T X
82. Xx X 2 X X E EE X Table3 4 X Cu K4 1 542 kV 40 mA 20 deg min mm 10 mm 13 20 3 5 X
83. an EMA 2 ios E EZB S p f eB f fy 71 g v voids Bi bulk Bi s 4 Bi G 1 5 2 AFM rms Zn AFM Bi 20 nm rms 9 856 nm EMA void 67 Hig 5 4 void 43 5 5 EMA 10 Bi SE O Bi EMA 0 w amp 10 20 1 1 l 0 1 2 3 4 5 E eV 50 i T T T T T T T T ddl Bi SE O Bi EMA 30 M En E eV Fig 5 5 EMA Fig 5 5 SE
84. etexe ae tke a ma dit auri nass Sire sere Le Rcs uda Cro Reo taa 50 S 10 E T os i pcr E 51 tora TE 53 LOIRE EE 54 Gc Yu OU UPPER ERE EI bold 54 G2 Bi OS FEE PERHI eso Eo SOR RDASI OR ORA ED EE ORE OEC EN ER ONE ER DR vu MU 54 Love dor we RUPEE E 56 EU dro pus cr TEE 58 59 7 4 AFM TERR Lieutenant nena nane 60 ye SEM Mp pm pP ET 61 4 62 W Erra FE 63 FEE ZA I AAMEPPEE 1 1 1 LSI Si Si 14 Si LSI Si Zn Bi Au Al
85. kE wE SE 4 7 1 25 3 4 eV fai AFM 1x1 nnm Rig 2 1 Fig 4 3 AFM Fig 4 3 Zn Si Zn 10 nm SE AFM Fig 4 3 10 nm 29 10 40 E2 30 20 10 E eV Fig 4 4 Zn SE 10 nm Fig 4 4 Zn 10 nm
86. m Density 9 78 g cm Z RATIO 0 79 39 5 3 SE AFM 4 Spectroscopic Ellipsometry SB 1 25 5 4 eV s ei jez 5 AFM rms root mean square EMA Bi nE kE wE SE 4 45 70 1 25 5 4 eV y gt Bi cuzRHC EO E 10 nm 20 nm 30 nm 40 nm 50 nm SE AFM ll Tv iR LE X LTRHEZO RORIZ
Download Pdf Manuals
Related Search