修士論文 半導体光検出器PPDの基本特性の解明と
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39. 12 2 PPD ELE
40. 4 PPD Ry O AVT R Ry T Vop 0 lt 2 lt 2 0 n 2 ps z 2 2
41. 3 7 45 TN 100 ns A T5 0 ns T5 AN TN Ay Ti TN Ai Ti Ti
42. q 1 4 Von Va 4 28 4 1 Ca Vop Va 1 4 29 z d 4 29 d q C
43. 21 3 23 8 JUDI DU U D EU 7B U D D U D LI NIM CAMAC Clock 1kHz is Scaler gt 5594 Discr Lai Discr een x63 x7 wid
44. os E E Shockley 1961 30 Qe h E exp 12 1 105 V cm APD Qe 20 6 1 APD G 1 4 1 f Qe
45. 14 2 PPD gt 105 ook 2225 25 02 54 e oaf 00 01 02 03 04 05 06 07 08 09 10 2 10 PP
46. n pn n n p n p n p p n p n depletion layer 2 pla A 1 elx E x A 2 p x 0 E x W gt
47. PPD AV 2 AV 3 10 5 2 PPD PPD gt 8 8 o oo L lt H 0 05 0 10 E 0 15 0 20 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 650 700 750 800 850 900 Time nse
48. 3 30 1 p e 2 gt jp e dj 3 48 j 2 p e 4 2 p e 3 p e z1 qi 3 p e 3 30 AV p e p e 3 31 3 31 a H b V 76 00 V 78 00 4 10 10 102 102 E TE 10 E 15 L LU 108 0
49. 42 3 PPD 1 gt accidental pulsing gt 2 gt accidental pulsing gt accidental pulsing Ti 4 1 2 DN 1 3 39 1 2 1 1 t Ti t TN 1 t Ti t TN P t Ti TN i 1 Ub Eu pine Un 3 40 TiTN Ti qul TN Ti Ti Ti TN Py t py
50. 84 6 PPD 62 Photon Detection Efficiency PDE x x MPPC PDE 21 250 nm 1 1 eV PDE 0 5 um 470 nm LED LED PDE AV 3 NIM 6 3 Vop 75 0V AV 1 55V Dark DISCR LED Driver AMP x63 LED BW 1 5GHz MPPC AND 10kHZ FAN OUT DISCR DELAY 83ns 100MHz SCALER 6 3 PDE PDE 6 4 0
51. 2 5 PPD 13 25 PPD PPD b 2 251 0 0 PPD PPD PPD 1 hermeticity 2 3 4 2 4 PPD 3 5 2 1 2 2 1 1 GeV 1 PPD occupancy N N 1 5 2 3 L Ny N ln sa 2 4 Ny N 0 5 3 596 N Nmax 10
52. 13 600 D 0 PPD to Q ImaxT CAV
53. TCAD PPD PPD TCAD ENEXSS 22 23 TCAD 51 ENEXSS PPD 1 ENEXSS e e e e ENEXSS PDE 2 ENEXSS e e e ENEXSS
54. p on n PPD Vop 2 k 1 2 PDE an kexp kz dz 4 a kexp kz dz d Z exp kZ an exp kd ap exp kD 6 3 0 45 E eV 1 1 1 1 lt E lt 1 76 eV k E um 6 4 0 4 x 10 8kVI 20 09 E 1 76 eV an 0 9 ap 0 25 D 5 3 um d 2x107 Z 01D 0 3D 0 5D 0 7D 0 9D 66 PDE D PDE d PDE
55. PPD PPD 67 1600 13 230 AV 3 291 3 321 e 3 330 6 7 e PDE e p on n 68 PPD PPD PPD PPD 1 2 3
56. 2 2 4 APD APD APD 2 2 2 2 APD 58664 55 5 5 mm x 5 mm C 20 60 nm 320 1000 nm 600 70 420 nm 400 pF 80 50 2 7 58664 55 23 PPD APD APD PPD APD APD 231 00000000000006060 APD e passive quench PPD active quench
57. 23 33 parenthesis s t bracket sU 33 4 2 1 3 6 1 3 7 MPPC f t MPPC s t s t ai f t ti a2f t t2 tm 3 1 s t s t ao to a1 t e 3 2 3 2 MPPC deconvolution 3 2 33 2 x t X w 3 3 gt dw X w 3 4 21 1 x t oft at maalt 0 z2 3 5 21 0 0 22 convolution 3 5 Xi w x Xa w 3 6 29 N 1 4 3 7 0 7
58. 38 3 PPD 3 4 1 ps VETO 1 VETO 3 23 AV 4 5 V AV AV VETO 1400 _ 1200 o amp gt 1000 8 m c 8 800 2 600 2 400 200 0 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 5 5 6 0 Over voltage V 3 23 35 00000 VETO 13 5 ns 3 26 3 9 13 24
59. Si 420 nm 0 5 um 700 nm 5 pm 700 nm 10 100 um Photon ap NP D 2 6 APD T 2 2 2 O00000 Si APD APD p n p pn n pn 2 2 3
60. 4 2 PPD 1 PPD 105 106 11 50 1000 106 107 2 PPD 30 100 V 1 5 4 1000 2000 APD Vl HPD kV HV HV 3 Si pm PPD APD PMT 4 nsec nsec PPD nsec O 100 psec 5 3 x 3 mm 30 80 APD 10 x 10 mm2 PPD 1 10 1 20 PPD 6 T PPD PMT 8 PPD 10 9 211 1600 516352 1x1mm 40 1600 1 25 x 25 um 12 21 MPPC 2 8 2 4 2 1 PPD 25 C 70 60 S10362 11 100U gt 50 D 10362 11 0500 5 3 E S10362 11 025U c 20
61. 3 3 31 3 3 4 D LI U D LI U 3 25 3 26 7 y U 200 ns 600 ns 3 16 TBW TBW TBW S N GND 0 3 16 GND 50 1 p e 1 p e S N 50 1 p e 25 1 p e 5 c S N gt 20 1600px 0 4 ns 1 p e tdead tdead gt T log 1 3 32 50 0 25 x 1 p e ta 1 2 ns FWHM 0 4 TBW TBW 0 FWHM 3 190 FWHM TBW 1 S N gt 20 2 gt 0 4TBW 1 3 18 3 19 TBW S N taeaaL FWHM S N 20 gt 1 4 ns TBW 1 1 4 ns FWHM S N TBW 2 0 ns FWHM S N 27 TBW S N TBW S N
62. 3 9 49 39 1 p e 2p e 3p e gt 1 1 1 3 50 Xk k 1 p e 7 j AV p j 1 2 4 3 51 24 1 4 3 52 2 1 1 1 9 3 53 5 iA 1 Xoo 1 Gp ap 4 SE 3 54 qp Nyand 1 2 2 1 3 55 qp AV gt 4 5V 3 55 0 qp 1 Ta 13 5 ns 1 dt a 72 y AV2e t T2 Bom om dt a 72 72 0 Ta TA JL Ta T3 3 56 oa T3 S
63. 96 E lt 2 kV cm Ue E E A 5 e h mobility 200 K 28 10 V cm 107 cm s 29 APD 107 cm s 10 um 0 1 ns Si A4 Si SRH n ni p pi ni A 6 On exp T Op exp t m Te Ni kr 3 5 2 4 _ 9 2 58 mem exp 28 3 7 8 w jg exp 4 9 A t exp 5 10 10
64. 10 2 PPD 105 106 PPD APD 50 100 PMT PPD 1 PPD G Vop Vo C Vor Vo 2 1 C C C 25 x 25 um 20 fF PPD AV Vo 2 3 2 D000 1 PPD 1 2 1 N Pixelated 600 D 500 gt 4 400 300 5 gt 200 5 c 2 LL 100 0 0 5 10 15 20 Number of photons 2 8 PPD MPPC l PPD PPD n 1 T n n p e PPD 2 8 21000000000000000000000000000000000000000000000 2 4 PPD 11
65. rol 1 4 1 1 Ll 1 1 Ll 1 4 ol 1 1 L 4 Si 300 K 77K 21 000000 1 60 100 PPD Electron Energy Level Conduction band 1 Valence band 1 Electric Potential Dep 1 1 1 1 12 ho 1 1 1 1 1 electron photon 1 1 etion layer n layer 000000000
66. 5 5 ENEXSS ENEXSS pn 3 ENEXSS PPD ENEXSS ENEXSS ENEXSS 81 161 PPD
67. LL 1 Oo c 4 6 ooo ooo G 5 3 d ooo ooo ooo 19 ooo Ono Ooo L3 r3 Ooo Ooo Ooo L3 c3 c ooo Oooo Ooo L3 r3 Ooo L3 r3 L3 r3 C3 Ooo
68. PPD TCAD TCAD PPD PPD PPD PPD PPD PPD 4 PPD PPD TCAD PPD 020
69. 6 000000000000 impact ionization
70. Pixelated Photon Detector PPD APD PPD APD APD APD PPD APD APD PPD PPD A 21 1600px MPPC S10362 11 025 PPD MPPC 2 1 PPD MPPC 510362 11 510362 33 025 050 100 025 050 100 mm 1 5 x 1 5 N A mm 1 0 x 1 0 3 0 x 3 0 1600 400 100 14400 3600 900 um2 25 x 25 50 50 100 100 25 25 50 50 100 100 96 30 8 61 5 18 5 30 8 61 5 18 5 nm 270 900 320 900 nm 400 440 Min 70 25 50 65 V 70 TO Hz 1 0 10 2 7 105 4 0 105 4 106 105 8 x 10 pF 35 320 PPD PPD 20090 0000000000000000000000000000000000000000000 T ua Silicon Photomultiplier MPPC Multi pixel Photon Counter SPAD Single Photon Avalanche Diode SSPM Solid State Photo Multiplier gt gt 00000000000000000600000000000000000 000000000 000000000000000000000000000 2 0000000 20070000000000000 207000 000000000000000000
71. 2 3 3 00000000 MPPC PPD MPPC poly Si 1600px 200 24 PPD PPD 241 kr 2 58 memp 4 exp 25 2 2 Me Mh 2 2 02 50 2 4 2 LT 12
72. 3 3 35 3 3 5 10100000 0 0 ROOT TSpectrum TSpectrum Search aj tj yli am tm yli 09690 50 aP GP 3 3 33 3 3 6 10101000 0 0 000 0000 0000000 3 20 1 m aU 1 m a 3 34 1 yi 1 p e G 1 213 22 3 85 5594 2 Bp 3 36 Go Jtrg 5 ns 200 ns 1 jtrg 195 ns Cm MZ 3 37 j jtrg 5 ns dec Gint ADC Gint aec Gint 2 3 21 Gint 2p e 3http root cern ch 4100000000000000000000000000000000000000000000000000000000 00000000000000000000000000000000000000000000000000000000000 000000000000000000000000000000000 36 p e Deconvoluted 4 3 2 Projection 1 0 4 4 1 1 4 1 4 1 1 1 L 4 0 1 2 3 4 p e Integrated Projection m bete 1801 4 dem EE bees bees eee bee 5 22 0 107
73. 300 K 200 K 77 K 69 050
74. 16 PPD TCAD PPD PPD TCAD PPD PPD TCAD Production of PPD Materials Yield Cost Marketing 2 11 PPD Process Physics of Processes Physics of Devices Performance of PPD Temp Dep PPD 17 030 31
75. 6 8 89 4 Ca 2 1 PPD HfO2 PPD PPD Co C PPD 16 9 PPD Substrate pn ENEXSS 90 6 PPD 6 8 PPD Wire p layer n layer Guard Ring Quenching Resistor n Substrate Buffer Capacitance 6 9 PPD 070 UL 91 PPD
76. Surface rate Depth Multipl Layer 6 1 Qe 1 cm E 6 1 a E exp 4 6 1 Bh an E exp 4 2 6 2 1 35 x 10 An 1 44 10 B 1 17 x 106 V cm 1 95 x 106 V cm cm 104 6 1
77. PPD p on n Si 0 5 nm 470 nm 4 4 3 231 470 nm PPD p on n MPPC photon Guard Multiplication Layer E Depletion Layer Substrate 6 5 p on n PPD 6 4 JU DH BU B UL U DI D LI U AV AV 86 PPD 65
78. 1 0 PDE Fill Factor 400 500 600 700 800 900 1000 Wave ength nm 6 6 PDE 6 6 66
79. MPPC 300 K Kikusui PAN110 1 5A PC Pt100 PAN110 1 5A 0 04 V 3 3 MPPC PAN110 1 5A 0 HV e HV 10 0 047 pF e MPPC GND C5594 16 C5594 AC 50 kHz 1 5 GHz 36 dB 63 12 16 V 15 5594 500 C5594 DC e HV MPPC C5594 C5594 QLA Z 50 bandwidth 1 4 GHz 20 Voltage Amp 3 PPD 2720 415 0 0471 50k 1 5GHz 36dB x63 C5594 Kikusui 110 1 5 HV 70V x MU 3 3 HV 3 1
80. 75 0 JUN 2 V 77 5 Vo Vo 73 46 4 0 09 V Gain 1000 600 400 200 800 ee nds i i ENT QU 75 0 75 5 76 0 76 5 77 0 77 5 78 0 78 5 Bias Voltage V 3 7
81. PPD 1 50 2 50 3 50 4 90 6 7 3 10000 9 9000 8000 7000 3 6000 2 8 5000 2 5 4000 2 3000 2000 1000 0 1 2 3 4 5 6 7 9 10 1 12 Over voltage V Present EI Crosstalk 5096 suppressed Afterpulsing 50 suppressed Afterpulsing 50 Crosstalk 50 suppressed Afterpulsing 90 suppressed Expected Random Noise 6 7 50 90
82. PPD PPD PPD PPD TCAD PPD TCAD TCAD
83. T L AV I t 76 to val 4 1 41 2 1600 1 200 77 K 2 200 77 K 4 21 3 4 300 K 200 K 77 K 5 Vol 1K 50 mV 77K 6 300 K 200 200 K 400 77 1600 T Tiong 2 300 K 200 77 K PPD AV R 4 2 AV R 4 2 421 PPD 4 2 300K gt of M 5 501 I 0 02 a 0 03 0 04 V expected 0 45 o
84. T2 TBW 500 ns efficiency PPD 100 efficiency 10 ns
85. 3 4 6 2 m m At v d gt 1 4 100 d 1 0 um v 1 0 107 cm s At 10 13 sec 4 41 ad 23 peli vAt an Van prli 1 tn 4 16 je 2 E a 109 vAt a peli 4 17 1 1 2 1 m 2 Ne Ne 4 18 Naltn 419 4 Ys I t Va t 4 20 PPD 4 2 59 Electric Field Cathode 0 2 1 j D 1 n 1 Anode Electron tn 4 1 These holes do NOT contribute to mult Holes accumula ea ce Avalanche M Drift I 0 while elect ultiplication iplication rons accumulate at cell m 1 4 6 60 4 PPD
86. 4 2 55 g YE o Gain Curve 300 Temp E 200 K Dry Ice n 77K Lig N E i 4 35 12 abp tee a baca Lot Oe 66 68 Bias Voltage V 4 4 2 200K 77 K 300 K 300 K 4 ns 422 AV R AV R AV G CqAV e 423 10100000 1 100 gt 0 Ro Ry T Va AV Va Vop T 2100 00000000000000000000000
87. 50 3 PPD 3 5000 lt 19 Total Noise Measurement 4500 Reconstruction 4000 4 777 Si ii nem isi 3500 a PE amp 3000 9 8 2500 2 2 2000 1500 1000 500 0 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 5 5 6 0 Over voltage V 3 33 Nm NO 3 57 1 1 2 1 13 33 gt 4 5V 2 AV 51 041
88. gt 45 1 10
89. 1 18 1 1 06 16 18 1 06 800000 800000 9 1e 171 8 9 1e 171 8 600000 2 600000 Z lt lt n 5 2 a 400000 lt 5 400000 lt 1 161 9 16 164 9 8 2 8 5 5 200000 o 200000 lt 16 154 0 1 15 r 0 0 0 5 1 1 5 2 0 0 5 1 1 5 2 Depth um Depth um Test 3 Distribution 15V Test 4 Distribution 15V 1 18 1 1 06 1 18 1 06 23 800000 800000 1 17 8 5 1 17 2 600000 2 600000 Z lt m lt m 5 2 a 400000 lt 400000 lt 1 161 9 16 164 e 8 8 5 5 200000 200000 S 1e4 1577 0 1e 1577 2 0 0 0 5 1 1 5 2 0 0 5 1 1 5 2 Depth um Depth um Test 5 Distribution 15V Test 6 Distribution 15V 1 18 5 1 06 1 18 5 1 06 800000 800000 9 16 17 8 9 1 171 8 5 600000 600000 lt m lt m e a 2 a 5 400000 lt 400000 lt 16416 E 164164 8 8 5 5 F200000 o 200000 Pad 1 15 0 1 157 0 0 0 5 1 1 5 2 0 0 5 1 1 5 2 Depth um Depth um Test 7 Distribution 15 Test 8 Distribution 15V 1 184 1
90. _ Va tn4i Valta _ 1 Aq 1 1 Aq 4 21 4 At At At At R 2 42 tn At Ean 44 22 peli tn svat LE tn 4 23 B At A Rae d 1 vAt an vAt 4 23 j 0 7 m 1 4 22 4 21 4 23 Va 1 Va Pel0 1 4 424
91. 4 Si electrons E nm cm Si holes 111 A 6 90000 111 98 5 00000000000 2 2 02 0 1 Nme 4 2 dz ER 93 2 A 11 0
92. 46 78 00 4 54 V 47 47 48 50 52 53 54 4 4 2 cece ey Roce te ce asun ca suu 55 y ET 56 ke 000000000000 ee ete a EE e AE Eee 59 47 R 100 9 401 61 48 100 MQ 4 900000 61 4 9 200 TO z st ss s sas a ss 62 62 63 64 65 65 65 66 70 74 75 77 78 79 5 7 1 x 1012 cm p B L 79 iilo dvd 82 EE 83 6 3 PDE Jp p p 114 est 4 srad deme BS ees oe Ea Rs 84 6 4 mI uem 84 6 5 ETPD ss ss 85 6 6 Re wwe 86 ks a bn IUE aw 87 6 8 11111111 1014 Rt ro LR 90 6 9 PPDUCI I kee x Bead be E dee ion ee 90 1 Si ETT 94 22124 94
93. 4 PPD Vo 1K 50 mV Qe Ah gt g 5 gt t o 5 9 m 100 150 200 250 300 Temperature K 4 3
94. Electric Field Impact lonization Primary Electron RENE Pas APD 101 d 0 34m d 1 5 1032 o L i 4 F d 1 0um L i i L d 0 5 i mes 102 i i i i i i 3pm LA LLLI 0 0 5 1 1 5 2 2 5 3 3 5 4 Electric Field x10 V cm 0 0 0 5 10 15 20 25 3 0 3 5 40 45 50 Electric Field x10 V cm A 9 Sil APD
95. 28 3 PPD N k m S k 1 p e 1 p e tj Vj 3 8 1 p e 2 2p e 3 6 3 10 S k 3 30 3 12 Amplitude V 0 02 0 1 roa aa nra L L1 La 200 205 210 215 220 225 230 235 Time nsec 3 8 2 Power 10 10 10 10 zi 102 102 10 1 Frequency GHz 3 9 3 3 10 107 102 10 29 103 3 10 1p e 102 10 107 10 10 1 Frequency GHz TENET 3 11
96. Si 300 K 2 Si 1 Si ABSORPTION COEFFICIENT CM7 71 4 411 SILICON 300 K
97. 4 2 57 efa 08 2 08 12 4 7 0 t I t q t t d Qo 49 48 4 6 4 8 CaVa t 4 t 9 4 9 E z t E t for 0 lt z lt d 4 10 E t d 4 11 4 11 Va E t 4 6 4 9 4 11 2 q d dq ef dz pe z t 2 1 t dt 2 t an E z 0 vn z t dt d dt ef dz 2 2 2 t pn z t o Ez t 4 12 ae E z t Aeexp 4 18 an E z t 4 14 2 2 Ve Un v 107 cm s 4 12 dt 4 12 4 11 d 222122 EC 4 15 d depest f dz py z t Nelt NA t N t 58 4 PPD
98. DAQ NIM CAMAC 3 2 3 2 2 DUBD UD D
99. 3 3 27 Wiener filter S k S N Fw k __ P SiM SHR pup SEP _ sti 20 sli 3 24 Fw k Fp k Fwlk x Folk x Y k 3 25 i 1 Fp k FH 3 26 Lz Wi st 3 27 50 NIK 3 27 2 L N2 Y k S k 2 2 2 2 1 S k Fw AINE Folk 1 ISH Let LAP 3 28 k L OL 9 3 29 188 wik ITEP 830 S N 23 3 31
100. 4 PPD 4 3 PPD 1 AV 2 AV 1 20 C 0 32 R 200 Vos 4 12 56 V 4 1 CQ C 221 5 fF Ca E 2000 10 1500 1000 500 0 4 12 2 Vop 58 0 62 0 V 4 13 I t 4 29 C C c 1 1 4 4 30 Q Ga 4 30 5594 414 0 15 nsec 58 0 62 0 V 4 3 Waveform 0 0000 0 0002 0 0004 0 0006 0 0008 0 0010 0 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6 1 8 2 0 4 13 V5 58 0 Voy 62 0 V mm Transmission 4 14
101. Noise Rate cps 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 x10 C 13 5ns gate 1000ns gate 0 05 1 15 2 25 3 35 4 45 5 55 6 Over voltage V 3 24 39 13 5 ns 3 23 1000 ns 40 3 6 00000000 3 PPD 78 5 3 25
102. 00 13 17 17 18 23 38 38 40 PPD 2 1 PPD 2 3 PPD 2 4 PPD 2 5 PPD 41 47 49 51 51 52 64 67 69 PPD 69 70 76 78 80 81 81 84 85 85 86 87 88 88 PPD PDE 91 TCAD PDE 5 5 1 5 2 5 4 5 5 e 6 5 7 93 93 94 95 96 98 98 104 105 UU 21 MPPC 1 2 2 1600 2 3 1600 2 4 1600 2 5 1600 2 6 APD 2 7 58664 55 D L1 L1 LI PPD 2 8 2 10 PPD
103. 3 3 25 211 221 1 z 3 9 l lt j 3 6 Clk Xi k x 3 10 MPPC MPPC s t 6 a t F t s t y am J t tm gt am J t 6 EE tm z f a t 9 8 z8 f t 3 11 3 12 817 81 F t S k X k x F k 3 13 X k S k si S k Fk F X k S k kernel X k x t X w Sik 3 13 S k X k x F k 3 14 D S k S k Sk sta x F k _ wu SE 3 15 3 15 F k Blackman window function 0 42 0 5 2 0 08 4 0 lt 1 lt Yun 0 otherwise TBW S N TBW PPD 26 nj
104. 33 3 DDUBDUDD 3 17 0 7 0 li ion N a M E s rt S N De O gt x 2 uc Tm 2 D I
105. PPD CERN Summer Student Programme CERN Thea ROOT MEG MEG PPD 2009 1
106. 3 22 1 1 S N
107. L3 r3 c3 G PPD 61 2 107 cm s ooo ooo ooo oo oo 82 V cm 4 3x10 6 PPD Direction of Field
108. 10 1 12 13 14 15 16 17 18 19 20 103 Hamamatsu Photonics MPPC Catalog Jun 2007 Feb 2008 F Herman The Electronic Energy Band Structure of Silicon and Germanium Jan 1955 WC Dash and R Newman Intrinsic Optical Absorption in Single Crystal Germanium and Silicon at 77 Degrees K and 300 Degrees K Phys Rev Vol 99 No 4 pp 1151 1155 Jan 1955 Hamamatsu Photonics K K 8664 Series Product Datasheet Aug 2005 Kikusui PAN A 2005 LeCroy WaveMaster Series WavePro 7000 Series DDA 5005 Serial Data Analyzer Operator s Man ual 2003 MPPC Feb 2008 Isamu Nakamura Radiation Damage of Pixelated Photon Detector by Neutron Irradiation 5th International Conference on New Developments in Photodetection Aiz les Bains France 15 20 Jun 2008 2008 Marius Grundmann
109. IV 5 2 WAND gt 19 8 17 5 22 1 21 2 19 4 16 1 22 9 22 4 21 9 22 3 24 0 35 9 24 7 23 4
110. 60 0 V d 2 0x 10 4 cm At 1 0 x 10713 sec C4 20 0 fF R 100 Q q t 7 4 g t 0 09 0 09 x 100 9 V 9 4 2 dg dt A 0 6 0 8 1 Time nsec 4 7 100 Q 61 R 100 q t Ra MPPC
111. PPD 93 HUA 000000000000 0000000000
112. A A Si 300 K Q Q 6 Si 111 00000000000000000000001 9 Si APD 900000000000000000000000 oen 21 PPD MPPC 22 APD S8664 55 ci ee 3 1 PAN110 1 5A 3 2 LeCroy WavePro 7300A 51 ENEXSS BJ SiPM 52 p 4 2 1 ERI ees ee eed 2222222 I vii 010
113. 2100 400 00000000000 0000000000000 32 Amplitude V 0 00 0 05 0 10 0 15 0 20 0 25 0 30 0 35 0 40 Normalized Amplitude 4 1 0 3 PPD 29 Tom 100 200 300 400 500 600 700 800 900 11 1 linearen EE E aa ra aa ra aa ra Eaa ba 100 200 300 400 500 600 700 800 900 Time nsec 3 3 33 Const 386 8 4 9 Mean 2 635 05 3 067e 04 400 Sig
114. 76 PPD 5 3 ITC irst BJ SiPM 20 V ENEXSS 1 Shockley Read Hall SRH Si SRH ENEXSS n pn U 1 5 1 ni Py qp Tn An TE BEEN 5 2 D D 1 N N P Bnp N 2 ENEXSS On p Eno 1 T An Qno T Bo Tr Tro exp o gt 2 5 3 Epo l Tr T Apo 1 Tro exp pot 2 5 4 p J D Jn E 5 6 4 Jn Jp IV 5 19 4 16 26 V 5 20 V ENEXSS lt Cuurent 1 05 Effect of Impact lonization 1e 06 1e 07 18 08 b 1e 09 p deside 16 12 esee 16 13 Lees 1e 15 1 15 1e 14 0 wl Impact lonization w o Impact lonization 715 10 15 Bias Voltage 20 25 TT 5 4
115. Normalized Waveform 0 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6 1 8 2 0 Time nsec 4 15 66 431 00000000000 4 PPD d 1078 cm At 1 0 x 10 1 sec 60 0 V 0 3 ns C 1 1 fF
116. Avalanche Probability Electron Seed Hole Seed 0 9 N e N e 74 76 78 80 82 Bias Voltage V 83 6 2 AV
117. 107 102 107 104 10 10 107 10 10 1070 107 1 Frequency GHz 10 107 1 Fregnency GHz 3 12 3 11 30 10 E 10 107 107 1 Frequency GHz PPD 3 13 3 10 3 14 Amplitude V 0 01 0 00 0 01 0 02 0 03 0 04 0 05 0 06 Amplitude V a 0 02 0 03 0 04 0 05 0 06 195 200 205 210 215 220 225 230 235 Time Tog rer 200 205 210 215 220 225 230 235 Time nsec
118. 37 200 200 Count 0 100 200 300 400 Time nsec 500 600 700 800 3 26 3 7 2
119. 4 2 5 R 200 R 200 0 009 dq dt 0 008 0 007 0 006 0 005 0 004 0 003 0 002 0 001 sr 4 8 R 100 0 4 0 6 0 8 1 Time nsec q t Vop Va I2 CaVa htl HR OVa 1 4 62 4 PPD 20 Waveform u A a TTT 25 r 0 5 10 15 20 25 30 35 40 Time nsec 4 9 R 200 I t
120. int Gc IG 37 3 22 1 2 3 R Gaec 1 Gin
121. 78 5 PPD 54 541 PPD p on n p edge breakdown 25 2011 0 2 0 55 Cathode n Anode Anode 5 5 2 pn BJ SIPM pn 1 25 5 5 18 5 uum 1 5 um p 700 keV e 40 V 1 1012 cm 1 1012 5 4 1 54 A 5 3 OOOO 0000000000 0 1 1072 2 1012 3 1012 5 1012 oF WwW Concentration Distribution Electrid Field Distribution 5 006404 9 65 0000000000000000000000000000000000000000000 00000000000 20000000000 000000000000000000000000 ED 1 Concentration Distribution Electric Field Distribution 5 002405 4 506405 4 006405 3 500405 3 006405 i 2 500408 2 006408 1 500408 1 000408 5 002404 5 7 0000000 1 102 0 00000000000000000000000 000000000 80 PPD
122. T 9 000000 oideQ icepp s u tokyo ac jp 210 10 80 Pixelated Photon Detector PPD 10 10 1 PPD 2 PPD 3 TCAD 4 PPD 1 AV TCAD PPD 4
123. T1 T2 000000000 S N 3 7 10 44 Count 3 28 1600px MPPC Pulse Magnitude 200 Analysis Region 180 160 140 120 100 80 60 40 20 40 60 3 PPD 80 100 Time nsec 3 27 a 0 0 1 1 a qo 1 1 1 50 60 Time nsec 1 p e
124. 90 88 PPD
125. 70 5 PPD PPD ENEXSS ENEXSS 6 ENEXSS 3 ENEXSS ENEXSS 1 52 000000000000 ENEXSS IT C irst SiPM BJ SiPM BJ SiPM ITC irst Silvaco TCAD ATHENA ATLAS 0E 00 _ 1E 05 5 2 05 E S9 8 05 2 9 5 4E405 a 5 5E 05 Electric Field 15 6 05 0 0 2 04 0 6 0 8 1 1 2 1 4 1 6 1 8 depth um 5 1 IT C irst BJ SiPM BJ SiPM ENEXSS ENEXSS ENEXSS 14 lInstututo Trentino d i Cultura Il Centro per la Ricerca Scientifica e Technologica 71 5 2 2 2 T H0 9 079 ZI AE 1 H0
126. 2 11 PPD PPD 3 2 a 0000000 3 17 3 18 TBW 3 19 TBW 3 20 ELO EET 335 0000000000
127. PPD PPD 41 411 PPD G C Vop Vo e CAV e 4 1 PB to
128. 10 pn APD 2 3 PPD
129. Super KamiokaNDE 50cm 1 APD 106 APD HPD Pixelated Photon Detector PPD SIPM MPPC i 2 105 106 PPD PPD PPD MPPC T2K PPD PPD PPD S N PPD Aerogel RICH PPD PPD PPD APD PPD PPD PPD PPD PPD PPD PPD PPD
130. PPD PPD 61 611 0000000000
131. MPPC 30 00000000 Aided
132. 3 28 1600 iii
133. 25 30 35 40 45 50 5 5
134. SSH Remote Control 3 5 3 3
135. amp 10 0 200 300 400 500 600 700 800 900 1000 Wavelength nm Photon detection efficiency includes effects of crosstalk and afterpulses 2 1 MPPC I 2 2 1600 510361 510362 11 25 020 2 3 1600 2 4 1600px 000000000000000000000000000 21 PPD 25um Aluminium Wire Photosensitive Area 2um 25um Quenching Resistor poly Si 2 5 1600px MPPC Connection
136. 3 athode ple 20 94 2 00000 Si 77 1 7 4 5 x 10 4 eV K 0 10 eV 300 K 2 5 eV
137. 1 0 1000 2000 3000 4000 5000 6000 17000 ntegrated Gain 1000 3 PPD 800 600 400 200 0 1000 2000 3000 4000 5000 6000 17000 Deconvoluted Gain 3 21 200 ns p e p e 2p e 1 p e 200 ADC 10 ns 3 3
138. ae log lt 0 17 lt Ge Or lt 1 gt 1 breakdown Sif APD d 17 0 10 PPD APD G iger mode 100 APD A 8 PPD Electric Field Impact lonization Generation of e h pair Primary Electron Phonon T m4 lt dd
139. e 3 41 1 1 pie py e TN 3 42 Ti TN i 1 2 P t 0 1 N t Aie 3 43 i 1 2 Ai 7 3 44 e gt ANTN l TN 3 38 43 500 ns TN 3 26
140. 100 ELE 100 1077 O 0 01 0 1 2 4 8 10000 optical crosstalk 1000 ELE 100 1 nsec 2 3 Amplitude V 0 02 0 04 0 06 0 08 0 10 0 12 0 14 0 16 Top 200 202 204 206 208 210 212 214 216 218 PPD PPD I OO
141. 3 20 f t Aexp t T 8 t to 3 21 1 GHz Y k N n j S
142. pn z 9 e ps z e es z 2 0 0 Va 4 3 E z dz E z Va 4 4 Qa Qu ce a T Qa Va Qa 4 6 4 6 2 2 0 Qo Induced Current Anode n layer Space Charge Electric Field Drifting 7 Carri rs 98 9900080800600009 Depletion Layer Free Carrier Electric Field p layer Cathode 4 5
143. 1 S XIN 2rijk N 3 8 2 24 Amplitude 0 00 V 0 01 0 02 0 03 0 04 0 05 0 06 0 07 2 Normalized Amplitude 225 230 Time nsec 1 0 0 1 230 235 Time nsec PPD
144. 2 2 Si PPD Sil APD 221 0000000
145. 300K 0 0 0 2 0 4 0 6 0 8 200 10 Time nsec Normalized Amplitude 77K 10 Time nsec Normalized Amplitude 10 Time nsec 4 16 300 K 200 K 77K 67 4 4 44 PPD 0 1 ns
146. PAN110 1 5A 6 10 0 110 20 5 Hz 1 MHz x RMS 0 5 mV 10 0 005 1 mV 0 100 0 005 1 mV 50 us typ 100 ppm C 3 2
147. 0 V PDE 0 3 0 2 5 2 0 Relative PDE in pn a 2 41411411 454 05 1 0 15 20 25 Over voltage V 6 4 PDE Vop 75 0 V AV 1 55 V 30 35 40 45 5 0 5 5 6 3 85 63 00000000000000
148. 06 16 18 1 06 800000 800000 m 9 1e 171 o 9 16 174 600000 2 600000 Z lt lt m 2 a 5 400000 lt 5 400000 lt 1 164 9 1 16 8 8 5 5 200000 o 200000 1 15 0 16 15 7 2 xal 0 0 5 1 1 5 2 0 0 5 1 1 5 2 Depth um Depth um 5 2 15 V 1 5 2 75 Test 9 Distribution 15 Test 10 Distribution 15V 1 181 1 06 16 18 1 06 1800000 800000 5 1 417 5 1 175 2 600000 2 600000 lt lt m 5 9 29 s 400000 5 400000 2 1 164 E 1 164 5 5 3 8 3 5 5 200000 5 200000 ut 16 154 0 16 15 p 0 0 5 1 1 5 2 0 0 5 1 1 5 2 Depth um Depth um Test 11 Distribution 15V Test 12 Distribution 15V 1 181 1 06 16 18 1 06 800000 800000 m 5 1 417 E 9 164174 2 600000 2 5 600000 lt lt m 5 9 5 s 400000 400000 2 1 164 E 1 164 S 5 8 3 5 5 r200000 7200000 16 154 r s 0 16 15 0 0 0 5 1 1 5 2 0 0 5 1 1 5 2 Depth um Depth um Test 13 Distribution 15V Test 14 Distribution 15V 1 18 1 1 06 16 18 16 06 1800000 800000 1
149. 174 E 9 1 174 8 600000 2 600000 lt T lt m 2 a S a s 400000 5 400000 1 16 S 1 164 E 8 3 5 5 200000 200000 1 15 0 16 15 gt 0 0 0 5 1 1 5 2 0 0 5 1 1 5 2 Depth Depth um 5 3 15 V 2
150. 2 2 2 E z 2e 14 1 exp d ae 6 99 gt G exp dae A 15 APD 6 2 13 lt 1 16 Qh
151. 200 400 600 800 1000 1200 1400 1600 1800 2000 0 1000 2000 3000 4000 5000 6000 7000 Gain Gain 3 30 V 76 00 V AV 22 54 O 78 00 V AV 4 54 V b Log Count Log Count 4 4 Fit Histogram Fit pue N 2p e Fit 2p e Fit 1 1 Lower Boundary Boundary Lower Boundary Boundary 3 31 2 48 PPD C2 3p e AV C3 Crosstalk Probability 0 50 0 45 0 40 0 35 0 30 0 25 0 20 0 15 0 10 0 05 0 00 over 2p e prob 15 2 0 Over voltage V C2 C3
152. AV R 4 8 T 2 4 C 0 32 fF 4 11 V C 4 10 63 4 2 XI 0 00 0 05 0 10 0 15 0 20 0 25 0 30 v uuoje eM 14 16 18 20 Time nsec 12 10 4 11 64
153. F T H0 8 II 1 H0 T 0T 1 0 6 8 1 1 6 9 q eT Z I 1 2 OT 002 q 006 Ae 0001 00 4 6 1 Dol 898 u 55 2126 72 5 PPD ENEXSS BJ SiPM HySyProS Variables x width 2 00 y_width 2 00 z width 3 00 z_ini 0 8000 imp_energy1 300 imp_energy2 1000 imp energy3 500 imp dozei 3 e13 imp doze2 5 e12 imp doze3 1 2e13 diffuse tempi 700 diffuse temp2 700 diffuse timei 10 diffuse time2 10 substrate conc 1 e15 grid x add loc 0 0000 spac 0 300 tag center grid x add lo
154. Iafrate Impact Ionization in Semiconductors Effects of High Electric Fields and High Scattering Rates Phys Rev D Vol 45 No 19 pp 10958 10964 Jan 1992 29 Ottaviani C Canali and Alberigiquiaranta Charge Carrier Transport Properties of Semiconductor materials Suitable for Nuclear Radiation Detectors IEEE Nucl Sci Vol 22 No 1 pp 192 204 Jan 1975 30 W Shockley Problems Related to p n Junction in Silicon Solid State Electron Vol 2 No 1 pp 35 amp Jan 1961 105
155. Ti 8 6 2 0 ns 3 45 74 20 ns Ti To TN A A AN Ti 3 45 Ti 3 7 3 3 29 AV pi P2 pi p2 Ti 5 2 P2 3 26 Ti A Ti AV 3 40 Pi t AV oAV e t h 3 46 P t AV 3 47 Q1 02 Afterpulsing Probability 3 PPD a E Time constant 1 8 6ns 0 45 pe Time constant 2 74ns 0 40 Total Over voltage V 3 8 38 000000000 47
156. file 14 1 1 sg3 save deleos file itcl 1 860 min ENEXSS BJ SiPM HyDeLEOS Variables bias start 0 0 bias_end 40 0 bias_step 0 01 HySyPros load dst itci 1 dst set output cur filename itci 1 cur set output dis filename 1 dis dis vars Psi E IEI Net 915 voltage 15 0 dis out FIXED initial guess style linear set grrate ii srh OFF sur OFF aug OFF set bias vO bias start vl bias end dv bias step name cathode set bias vO 0 0 name anode run dc 74 Test 1 Distribution 15V PPD Test 2 Distribution 15V
157. 21MO 63x 50 0 pui vesc 0 10 20 30 40 50 Tin nsec 200K gt of E F 2 0 03 0 04 Spike Component l Ld 1 L ag R 0 10 20 30 40 50 Tin Insect 77 gt or E bf aN owe Sie eo a E oe eee EE 2 0 056 o 63 50101 8 02 5 A Spike Component 0 04 0 10 20 30 40 50 imf nsec 4 2 MPPC AV R AV R 53
158. D PPD granularity dead time 2 PPD PMT APD 50 mV K C AV 2 1 PPD APD PMT calibration PPD PPD PPD PMT 106 PPD 1 2 106 3 2 5 PPD PPD AV MPPC AV
159. The Physics of Semiconductors An Introduction Including Devices and Nanophysics Springer 2006 Sergio Cova A Lacaita and G Ripamonti Trapping phenomena in avalanche photodiodes on nanosecond scale IEEE Electr Device Vol 12 No 12 pp 685 687 Jan 1991 Adam Nepomuk Otte Observation of VHE gamma Rays from the Vicinity of magnetized Neutron Stars and Development of new Photon Detectors for Future Ground based gamma Ray Detectors PhD Thesis p 243 Oct 2007 Richard Wigmans Calorimetry Energy Measurement in Particle Physics Oxford 2000 H Otono Study of MPPC at Liquid Nitrogen Temperature 07 Aug 2007 2005 0 Feb 2006 Hamamatsu Photonics K K C5594 Product Datasheet 1998 Steven W Smith The Scientist amp Engineer s Guide to Digital Signal Processing Second Edition California Technical Publishing 1999 Akito Kusaka Research and Development of a Hybrid Photo Sensor for a Water Cerenkov Detector Master Thesis 2004 MPPC 2008 W Maes De Meyer R Vanoverstraeten Imapct Ionization in Silico
160. c 3 1 18 PPD 3 2 3 2 1 1600px MPPC MPPC
161. c x width spac 0 300 tag right grid y add 1 0 0000 tag front grid y add loc y width tag back grid z add loc z 111 0 40 spac 0 05 grid z add loc z ini spac 0 005 tag surface grid z add loc z ini 0 10 spac 0 100 grid z add loc z width spac 0 100 tag bottom region substrate substrate imp P orient 100 xmax right xmin center back ymin front zmax surface zmin bottom init sypros diff model select model name mulvaney full oxi ctrl native oxide create true thick 0 0003 n implant dose imp_dozel energy imp_energyl ion P deposit mat Si thick p implant dose imp_doze2 energy imp_energy2 ion B p implant dose 1 0 z_ini imp_doze3 energy imp_energy3 ion B diffuse amb nitrogen temp diffuse_temp2 time diffuse_time2 5 2 73 etch mat Si thick 1 0 save sgraph
162. ma 0 03006 0 00023 350 300 250 200 150 100 50 0 ppl 0 1 0 05 0 0 05 0 1 Deconvoluted amplitude 3 16 Amplitude 1 Ld 7 7 2 2 5 Pd 4 Pd H50 7 7 4 time TBW Dead time 3 17 TBW c 60r L o 50 20 00 05 10 15 20 25 30 35 40 45 50 55 60 nsec 3 18 TBW S N 34 3 PPD Dead Time time nsec FWHM FTTTTTTTTTTTTTTTTTTTTTTTTTTTT m A 3 19 Taw FWHM BIT 1 1 1 1 1 1 196 198 200 202 204 206 1 208 Time nsec 3 20 Taw 2 0 ns
163. n Review and Update Solid State Electron Vol 33 No 6 pp 705 718 Jan 1990 21 Kato T Ono and Amemiya Physical mechanism of Current induced Resistance Decrease 22 23 24 25 26 27 in Heavily Doped Polysilicon Resistors IEEE Electron Dev Vol 29 No 8 pp 1156 1161 Jan 1982 HySyProS 2005 HyDeLEOS 2006 Claudio Piemonte A New Silicon Photomultiplier Structure for Blue Light Detection NIMA Vol 568 No 1 pp 224 232 Nov 2006 Taguchi T Y Sugimoto Makita and H Ishihara Planar structure InP InGaAsP InGaAs Avalanche Photodiodes with Preferential Lateral Extended Guard Ring for 1 0 1 6 mu m Wavelength Optical Communication Use J Lightwave Technol Vol 6 No 11 pp 1643 1655 Jan 1988 T Kagawa Design of Deep Guard Ring for Geiger Mode Operation Avalanche Photodiode Electron Vol E88C No 11 2136 2140 Jan 2005 5 Gomi Hano T 5 Itoh Kawagoe 5 Kim T Kubota T Maeda T Matsumura and Y Mazuka Development and Study of the Multi Pixel Photon Counter NIMA Vol 581 No 1 2 pp 427 432 Oct 2007 28 J Bude Hess and GJ
164. th 15nsec width 15nsec gt Kikusui 100MHz p 110 1 5 GG 3 4 3 2 4 LeCroy WavePro 73004 7 WavePro 8 21 WavePro Ethernet TCP IP GPIB Ethernet WavePro SMB Server Message Block PC PC WavePro 1 10 000 10 WavePro 200 ns 800 ns 1000 ns 10 GSamples s 0 1 ns 10 000 2byte 10 000 20kB 1000 Vop 75 0 V Vo 78 5 V 0 25 V 15 100 000 22 3 PPD 3 2 LeCroy WavePro 73004 3 GHz 50 Q 150 ps 8 bit 2 mV div 1 V div DC full scale 1 5 20 ps div 10 s div lt 5 ppm 0 40 1 2 ps Max 20 GSamples s Normal Auto Single Stop DC 500 DC 1 2 5 ps rms SMB File Sharing V AMP Oscilloscope HPK C5594 LeCroy WavePro7300A Ethernet Commands Queries Control Storage Configuration PC Trigger Temporary data storaging Frontend Kikusui HV PC 110 1 5 Measurement Header File
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