薄膜多結晶酸化亜鉛のガラス基板上における成長初期
Contents
1. Q Nl 2 12 MN lt NL 1 2 13 22. Magnetic Coil Ur Gun Discharge power supply Substrate To N Magnetic Flux Anode hearth Beam Controller 3 7 28 LC ULO amp s hm lt Ar 3 8 3 4 2 5 250 A
3. 7 T AFM JROL AFM 2 a
4. X XX X 3 28 Out of plane 3 8 2 4 2 1n plane In plene 3 29 1 e 1 X 1 2 X f 2
5. 1 ZnO LiNbO LiTaO F oC Zn0O c WM NN CVD SAW ZnO
6. 300E e lt RS es 8S 100F Ssccm 7E 30 sccm 0 20 40 60 80 100 Thickness nml 4 18 In plane 10 30 60 4 4 4 XRD c c a c a
7. 3 20 20 41 3 7 2 3 AFM 3 7 2 3 1 1 8 7 2 8 2 1 EE E TF A
8. 1 22 1 28 0 899 1 74 2 17 2 06 5 20 16 2 A AFM 4 4 XRD XRD 4 4 1 58
9. 3 4 dc 2002 p38 2 5 2 2 rf 10 1 3 5 rf rf dc dc rf dc dc dc rf
10. 15 TFT 5 LCD LCD 1 82 2006 02 13 LCD ITO 2 5
11. 3 9 29 Ta LaB ES DA 7 9 7 1996 p106 1 3 4 3 9
12. 3 30 AFM 51 Ra 0 957 nm RMS 1 22 nm 4 4 1 i 25 50 100 200 300 nm 5 0 5 10 20 30 40 50 sccm 7 Hall
13. EL 2 7 EL EL 10 um 100 300 mm TITO 2 7 EL 166 2 4 3 3 p27 3
14. 3 2 200 200 C SiO 1000 Corning 7059 593 BLC 527 AS 511 PD 70 PMMA 5 200 PS 230 PC 246 PET 260 74 3 2 p81 9 94 3 6 2 4 1 1
15. 2 1 Ar O N CH Ar 1 3 3 E 9 10 lt 10 Pa
16. 18 2 17 NEE EE de Gk 1 1 1 1 1 2 3 1 3 4 1 3 1 4 1 3 2 5 7 2 1 ce 7 2 2 7 2 3 8 2 3 1 8 2 3 9 12 2 3 3 13 2 4 13 2 4 1 LCD 14 2 4 2 EL 15 2 4 3 16 2 4 4 17 2 4 5 SAW 18 2 4 6 18 CE 19 3
17. 40 nm 0 nm 40 nm 300 nm 5 1 ZnO 63 EL 1 2002 2 21 http www meti go Jp kohosys press 00023886 1 020221displaypdf 3
18. Id 4 3 21 83 21 1 3 7 2 8 8 1
19. 2 3 2 ZnO 83 3 eV 380 780 nm 2 8 1 2 3 Bursteim Moss
20. J 2010 ul J lt 780 nm 80 3 2 eV 6 Au Ag 1 1V E Pt Cu Rh Pd Al Cr
21. TFT TV 2006 02713 108 TFT Plasma Display Pannel PDP 2 20 30 mm 2 8 x y
22. E p81 3 1 lt gt 10 Pa Qc eV
23. 12 Burstein Moss 10 x10 cm
24. 10 Qcm ZnO ZnO Ga 1 8 Sphalerite ZnS Cassiterite SnOs 1 1 3 1 20083 1 99 97 906 961 kg
25. 1 cm 4 3 26 Hall ACCENT HL5500PC 47 3 8 2 8 AFM AFM JEOL JSPM 4210 3 27 3 27 AFM JEOL JSPM 4210 3 8 2 4 XRD ATX G 3 8 2 4 1 Out of plane Out of plane
26. 2 5 8 ZnO 8 2 3 8 eV ZnO ZnO 14
27. BHD Brooks Herring Dingle theory Termi Dirac _ 247 6208 hn em 9 Z7 2 5 7 amp g g Z g x g x nir 2 6 0 2 x 5 2 7 2 AEE h VIZ nN 1 3
28. RMS 42 nN E
29. H un k r 3 m e PR 2 8 20g g 7 Kx uy 10 eh pu 2 3 47
30. n 2 9 30g7Z J72 47 kt is 2 Mae 4 Nm g d 2 10 N A 2 11 6 77 2 9 2 10 Volger Petritz Kazmerski Orton Powell Seto
31. nm dv A pe V Vo V2 y 3 22 1 43 3 22 v 3 1 27 m 7 9z 3 22 v oF a 2z 1 m Av v 7 9
32. 1 a b 2 6 166 _p20 2 4 2 BL EL Electro Luminescence EL EL de 1 5 lm W 1000 cdm EL 1987 16
33. AA 4 MgO 2 a 1 2 8 PDP 2 4 4 3 mT p 166 p24 3 pn n n p 2
34. LCD 1 4 2005 1 5 ITO 3 1995 2004 9 3 8
35. Zn0 1 2 3 rf 4 5 6 ZnO 7 8 9 3 23 BB rf RPD EB rf 8 24 2 170 nm min 45
36. 7 1996 p106 16 17 18 masch 19 STM AFM 0 64 20 PIXE
37. 54 Resistivity cm 1 5 sccm 30 sccm 0 1 ee lt 0 10 20 30 40 50 60 70 80 90 Thickness nm 100 110 120 130 4 5 Mobility cm2 Vs 5 sccm 30 sccm o 0 022 oe 9 9 e oe ee 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Thickness nm 4 6 1E 20 Carrier concentration cm 3 lt 3 ee We lt ee e eo 1E 19 5 sccm 30 sccm 0 10 20 30 40 50 60 70 80 90 100 Thickness nm 110 120 130 TT 4 7 55 4 2 2 4 2 1 4 2 2 100 nm
38. 166 p80 9 10 10 Qem 10 lt 10 cm 10 cm n In 0 SnO Zn0 CdO CdTn 0 Cd Sn04 Zn SnO In 0s ZnO In203 Sn SnO2 Sb F ZnO Im Ga Al 10 10 cm Al 10 lt 10 Qcm
39. 2 rf 8 5 rf 13 56MHz
40. 61 5 i 5 sccm 30 sccm 2 2 0 nm 40 nm SE 100 nm 3 AFM 4 XRD ZnO c 40 nm 200 nm tf 2
41. 3 18 166 p189 3 6 3 6 1 3 p68 Corning 7059 0 7 mm
42. 1 100 nm 2 100 nm 1x10 2x10Pcm 100 nm 100 nm N 1 E 00 1 E 01 1 E 02 Rsistivity cm 1 E 03 0 50 100 150 200 250 300 Thickness nm 4 2 1 E 20 1 E 19 Carrier Concentration cm 3 Mobility cm2 Vs 1 E 18 0 50 100 150 200 250 300 0 50 100 150 200 250 300 Thickness nm Thickness nm 4 8 4 4 Hall 53 4 2 2 100
43. PLD RPD 200C MOCVD 400 225 rfMS 90C MOCVD 400 2 MOCVD Zn0O rfMS RPD
44. 4 4 1 c 1 c AFM 56 b 16 3 nm 4 8 10 6 16 3 23 52 75 6 99 316 nm AFM 8g b c 5 sccm g h 30 sccm TN 57 nm Ra nm RMS nm 10 6 0 935 16 3 1 02 23 3 0 722 35 2 1 39 52 1 73 75 6 2 06 99 4 20 316 13 2 4 1 4 3 2 AFM
45. eV X 13 L uny 3 3 2 1
46. 4 3 1 AFM 54 4 32 57 4 4 XRD RN CS 8 NI NS EEN GG i 57 4 4 1 57 4 4 2 58 4 4 3 59 4 4 4 60 5 61 62 a RN NE EE I WI SENS EE 0 EN GN i i 3 EE 64 65 i111 1 1 1 Plasma Display Panel PDP LCD PDP 60 LCD CRT Cathode Ray Tube PDP 1 LCD
47. 2 14 2 kT 2 15 hp a Lq J 2m E a 2 16 MM 7 ZnO n gt 5x10 cm
48. 6 EB Electron Beam Enhanced Plasma EBEP uny 2 RN 3 un RE 7 8 4 ZnO 3 4 1 1 ZnO ZnO
49. 40 nm 4 3 AFM AFM 4 8 1 AFM 10 6 16 3 23 52 75 6 99 316 nm AFM 4 8 4 1 10 6 16 3 23 75 6 nm 5 sccm 52 99 316 nm 30 sccm 23 nm 1
50. ZnO c 0 40 nm 100 nm 100 nm Zn0 a 62 5 1 40 nm
51. 8 18 2 4 2 cm AFM 2 3 18 AFM 8TM AFM 19 39 3 7 2 2 AFM
52. IBM 1981 STM 10A 3 14 2 STM
53. STM AFM STM AFM 2 AFM 36 Si Si3N4 3 15 18 3 7 2 1 AFM AFM STM 8 7 2 1 1 STM STM
54. ATFM 3 20 Force distance Tip sample distance Force z 3 19 19 Force A lt Zo Force disstance B 40
55. 3 10 2 g ee ITO 3 3 10 166 p212 30 8 4 4 1 m
56. rf dc rf rf ro RF 13 56 MHz 3 5 rf 2002 p39 24 3 2 2 1
57. 2 4 6 resistor variable 19 MO 7 a 4 ZnO ZnO Bi O Cr O PE Sb 0 CoO MnO 1100
58. 0 2 eV Zn O Zn n Zn 0 5x10 cm 1 ii Fe excited 1 3 35 3 nl lt 15eV Fe 2 GWS eR 1 2 eV H 1 Zn 43eV W ec eV V Zn n a 276V 0 ENS SC VT ID 0 2 2 Zn0O
59. 166 2002 5 1998 2005 6 2005 108 109 7 99 8 1996 2005 9 15 8 15 181 10 2002 1 1992 12 18 14 57 11 2005 p 1142 1150 15
60. 1 49 In plane 8 29 In plane 3 8 8 ZnO ZnO 85 mm 20 mm 0 7 mm 4 OA 10 200 rf 20 W 0 50 sccm 10 Pa
61. ITO Cr Cu Cr MgO x y Ne
62. ITO 4 In ITO 1 2 Im ITO Zn Zn0 ZnO HT ZnO
63. eV E 26 Ar eV
64. RPD MOCVD PLD rfMS PLD 1cm RPD MOCVD rfMS N 931 8 1 Zn 2 ZnO dcMS ZnO TMS ZnO TMS 1x10 ZnO TMS 5x10 ZnO Al TMS gt 1 5 x 10 ZnO Ga TMS 2 5x107 ZnO In TMS 4 4 0x10 ZnO B TMS 5 2 5x 10 ZnO Al TMRS 1 6 3 7 x 10 ZnO Al TMRS 2 ZnO Al CVD ZnO Al CVD 8 5x10 ZnO Al MOCVD 1 8 8x109 ZnO Ga MOCVD 2 4x10 ZnO B CVD ALD 8 ZnO ZnO Al 2x10 ZnO In 4 x 10 ZnO In 8 6x10 ZnO F lt ZnO Al PLD 8 4 1 5x10 ZnO Al PLD 8 5 8 x 10 ZnO Ga PLD 1 4 8 7x10 ZnO Ga PLD 4 2 1x107 ZnO 3 2 4
65. 6 JST 1 66 O 67
66. 1 Mattox Pa 18 56 MHz HCB HC 10A 5 Activated Reactive Evaporation ARE
67. PC PC AV 2000 2010 2 25 03 1 EL 2 EL 7 1 lt 9 9 2010 EL 3 PDP FED 0 9 2 7 2010 EL p15 2 Au Ag Pt Cu Rh Pd Al Cr Im O SnO ZnO CdO TiO CdIn 0 Cd SnO Zn SnO In O ZnO MgiInO CaGaO TiN ZrN HfN LaB 1 2
68. 2000 LCD 2 7 11 9 2010 PDP 0 1 0 4 LCD PDP SR 1 LCD Liquid Crystal Display LCD EL Electro Luminescence E mp8 4 4 EL 4 1 EL 5 1
69. 637zc 2 1 Zn O 0O 378 4 1 0 1992 nm 4 Zn 0 072 nm 4 0 0 124 nm 0 8208 nm E Zn O 4 0 Zn 4s O 2p o MG 0 SU
70. m 1 p 29 7777 n ZnO n ZnO Zn0 Zn e 0 1 2 3 Zn0 Vo e gt 0 1 2 4 Zn 1 Zn Vo 1 0 e Zn Vo 2 1 ZnO 2 2
71. E ANoeenanedesss 2 k k gt 2 3 Burnstain Moss 166 p74 3 2 3 3 9 ZnO 2 1 C 1975 AH kJ mol 540 ZnO C J deg mol 40 3 S J deg 43 65 AH kJ mol 348 4 A kJ mol 318 4 MJ mol 4 03 kg m 5 7 5 67 X kg 1 kg H O 3 4x10 25 3x10 4 5 18 J s m deg 25 2 93 2 1 ZnO 2002 p24 2 4 2 4 1994 2004 Zn0 4
72. 1 7 EL 1X103 Qem 380 850 400 nm RR 3 15 nm E 1 1 2010 2001 1 2
73. 95 AFM Z Pa 3 14 STM STM Z Y 3 7 2 AFM cantilever 8 15 AFM STM
74. H ZnO E Ru ZnO CdS ZnO surface acoustic wave SAW Cd ZnO
75. Knudsen cell B 3 FE CVD 3 3 1 3 6 18 2h___ lt 3 6
76. ZnO PIXE 2005 52 K Hall 2005 1 28 2005 66 II O 8 Kishimoto T Yamamoto Y Nakagawa K Ikeda H Makino and T Yamada DEPENDENCE OF ELECTRICAL PROPERTIES OF UNDOPED ZnO THIN FILMS PREPARED BY ELECTRON BEAM DEPOSITION WITH RF PLASMA ON FILM THICKNESS O T Yamamoto T Mitsunaga M Osada K Ikeda S Kishimoto K i Awai H Makino T Yamada T Sakemi and 8 Shirakata Superla
77. 34 E EBTrf rf 10 16 nm min 1 10 REB rf 170 nm min oo zuo EE 0 O EN 10 16 nm min EB rf O O 3 24 RB rf 3 8 2 ZnO 3 8 2 1
78. 2005 720t 1 5 2005 2 2 1 Zn0 Al Ga ZnO AZO GZO 2 2 Zn0 2 3 2 2 9 ZnO
79. X X 1 sim 1 2 sin X 8 fT X
80. Scanning Probe Microscopy SPM 34 3 7 1 34 3 7 2 35 3 7 2 1 AFM 36 3 7 2 1 1 STM 36 3 7 2 1 2 97 3 7 2 1 3 38 3 7 2 2 AFM 39 3 7 2 3 41 3 7 2 3 1 41 3 7 2 3 2 41 8 7 2 8 8 42 83 8 44 3 8 1 44 3 8 2 45 3 8 2 1 ww mh SN AmN 45 3 8 2 2 Hall 46 3 8 2 3 AFM 47 3 8 2 4 XRD 47 8 8 2 4 1 Out of plane 47 3 8 2 4 2 In plane 48 3 8 3 ee 49 3 8 4 50 4 51 4 1 51 4 2 52 4 2 1 300 nm 52 4 2 2 100 nm 53 4 2 3 WV EE SE TT AT EN GE EE NI 54 11 4 3 AFM E 54
81. 2 3 28 X 2 X X 2 2 29 27sin 4 4 XX 48 X 29
82. 3 2 1 dc 910 11 8 4 dc 2 1 Pa V Ar dc rf
83. uh ULVAC Alpha 8TEP 3 25 7 SN gt ZnO Alpha STEP 46 8 8 2 2 Hall 3 25 Hall ACCENT HL5500PC 3 26 van der Pauw
84. O RPD Reactive Plasma Deposition 2 40 eV 3 7 8 8 ZnO Ga O
85. oF _ 2 3 3 Oz Vo 44 3 8 fi 3 8 1 EB xrF 8 28 7 EB 6 ZnO Ga ZnO pellet 3 rf 2 1 ZnO 8 9
86. 166 p137 3 mm 7 ZnO m 0 3m 5
87. 4 1 25 nm 30 sccm 5 sccm 5 sccm 30 sccm 2 1 E 07 25 nm Es05 mm 5 E 100 nm amp 1E 03 E 200 nm E e 300 nm 1E 01 1 E 01 1 E 03 60 sccm 4 1 52 4 2 4 2 1 300 nm 4 1 50 100 200 300 nm 30 sccm 25 nm 5 sccm 4 2 4 8 4 4
88. FE 18 a 1991 TiO Si H 2 4 5 SAW ZnO Ru 1 Ru
89. 1 3 7 2 1 2 19 8 17 10um 8 17 A FM 1 98 3 7 2 1 8 1
90. 9 20 AFM nm 2 a 8 199 b adhesion
91. 4 9 Out of plane ZnO c Zn0O 4 10 10 6nm Int cps 30 32 34 36 38 40 2q deg 4 9 Out of plane 4 10 ZnO 4 4 2 c a 4 11 4 12 c a c a 200 nm c 5 208 Al a 3 254 A
92. AFM STM 8 16 STM STM STM 2 3A STM 5 10 A 2 97 3 16 STM AFM
93. 3 1 Chemical vapor deposition CVD CVD ba C H OH 19 20 E ZnO Zn CH Zn C H MBE ICB PVD dc f CVD ECR CVD
94. 3 11 1 m 2 1 m Ga ZnO 9 5 8 7 19 3 11 RPD 3 5 ZnO 3 1 3 1 3 12 3 18 2 0x10 Q cm
95. 7 383 2 1D Ar 3 8 12 3 3 1 p69 dc rf
96. 1 5 Ny 25 NH
97. AI 1 1 ZnO Zn Sn Im O TO Indiam Tin Oxide ITO nm 90 2x10 Ocm
98. ZnO c 5 207 A a 3 249 A 200 nm 100 nm 40 nm 59 lt 5 24 3 252 5 1 5 sccm T 30 sccm o 5 227 e 6 es3 248L q e E a LF 23 244 2 a 8 sccm 5 H 5 2 0 20 40 60 80 100 5 20 40 60 80 100 thickness nm thickness nm 4 11 c 4 12 a 4 4 8 4 13 In plane Williamson Hall 4 3 AFM In plane
99. 80000 70000 60000 50000 t 40000 30000F 20000 10000 994 1996 1998 2000 2002 2004 2 4 ZnO 8 2 5 ZnO 8 2 4 1 LCD 3 LCD hquid crystal display 2 2 2 ON OFF 2 2 6 RGB
100. CVD CVD La _ 3 1 2002 p33 9 4 3 2 1D 8 2 Ar gt
101. 10 Pa Zn0 OA 10 4 0 7 mml 200 C Gnax 400 C rf 20 W Gnax 200 WI 0 lt 50 sccml 0 sccml 10 Pal 10 Pal 3 3 50 3 8 4 OA 10 4 0 7 mm 10 10 10 3 30 AFM ZnO
102. 200 rfMS rfMS Sh 3 6 Scanning Probe Microscopy SPM SPM STM Scanning Tunneling Microscope AFM Atomic Force Microscope 2 3 7 1
103. 1CVD lt lt lt 19 2 mW WW ero W 20 3 2 1 dc lt lt 3 2 29 rf lt 23 3 2 83 4 3 3 24 3 3 1 25 3 3 2 0 2 T 26 3 4 27 3 4 1 27 3 4 2 28 3 4 3 29 3 4 4 30 8 5 30 3 6 33 3 6 1 33 3 6 2 34 3 7
104. 3 ZnO 1975 C 3 1 CVD 9 Zn C H ZnO 50 ns 0 1 E E CVD
105. 4 1995 2004 9 8 2005 674 t LCD ITO 1 4 1998 2001 1998 LCD STN Super Twisted Nematic 1iquid crystal STN STN ITO 1 3 1 4 TFT Thin film Transistor TFT LCD 7 2001
106. 99 99 E 12 2005 5 E 2005 6 99 99 LMB 10 0 10 5 jkg 1200 LMB 99 97 LMB 99 97 1000 99 99 99 999 800 un on 6o0 Ss 400 PP Na 200 a 0 3 0 N AN My ToT AN AA TA AA AN QOS OO SS SW SS SS SS SS 1 3 5 1 3 2 1 4 1
107. N 0 3249 nm c 0 5207 nm c ZnO I 3 2 1 ZnO 2 3 2 8 1 3 v v LE 2 1 er z
108. nm 4 2 1 100 nm 4 1 5 sccm 30 sccm 5 sccm 30 sccm 2 Hall 4 5 4 6 4 7 Hall 40 nm 40 nm 40 nm
109. ttices and Microstructures 38 2005 pp 369 376 FUNCTION amp MATERIALS 9 SEP 2004 pp 44 54 E MRS 2005 Spring Meeting May 31 June 3 2005 SYMPOSIUM G ZnO and related materials 65 8
110. x10 ZnO Al 18x10 ZnO Al 6 6 x 10 ZnO ZnO ZnO Ga 1 RPD 1 4 9 2x10 ZnO Ga 2 RPD 2 4 9x10 1 1m 2 10 cm 15 ccm dcMS DC rfMS rf rfMRS rf RPD 166 p139 9 392 FOO 0 0E 00 2 0E 04 4 0E 04 6 0E 04 Q cm 8 0E 04 1 0E 03 3 12 166 p139 100 200 300 400 500 C 600 700 800
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