Kochi University of Technology Academic Resource Repository
Contents
1.2.
3.
4. Olaa O 8 uf
5. DRAM 1 100 1 1000 11 FeRAM T
6. MOD MOD SBT MOD
7. LSI PMDA ODA 4 L 5MeV SS
8. RBS
9. 2 ii ential shes 2 0 H Geiger E Marsden 1 oe c S
10. SEM 3 166 5
11. S 1 3 2 1 Bragg Bragg 10 20 GX 1 3 3 1 MeV
12. 2 1980 PZT 1984 RAMTRON 1993 PZT 4 112 4
13. 9 2 He Ii Al p o igo ee 3 um Al SAVY CAREER CE SILLS 3 6 B 3 3 3 B
14. A BE E aul 7E STM Zi MORK aret
15. ms co RBS Pie genie RBS HIRBS Heavy lon RBS
16. PC cca E M a Un A RF ID LSI eos T JE n dA SAA E
17. LSI CMOS
18. 1 4l Feldman 11 1 Feldman
19. He 2 3 3 1 1 1 1 2 15 88 3 A A X 1 2 2 Al
20. 38 1 gt 9 PEcuyer 7Z F On 1 2 4 1 Osc ae F 4 Pene 1 E X 1 2 4 2 Ecu Ecu keV 4 _ OE M 2 L Ecuyer E M LAB O An 27Bi 124 1MeV 0 9980 O 0 9661 Au 0 9638 Bi 1MeV
21. i m uu E M E n RF ID Rub er en Cre RF ID
22. ecu uo e UR SHE Es O a a O E 4 5 4 5 ee ee E en LT 1 2 3 17 19
23. Rutherford _ 20 1 1 2 Thomas Fermi a 0 8853 Z2 Z2 gt a 0 1 0 2A 1000 1
24. MCA 1 Si 100nm 3032 keV 13 keV FWHM 2 2 1 85 MCA 2 2 2 fi 2 2 3 He 30 nm 2 3 1 2 2 1 fi S uC 4
25. 12 14 22 E x E 3 41 E pE 2 x 1 3 1 1 lt S 5 2 X E
26. 4 E AE AE E Vavilov Bohr Symon Payne Tschalar 37 2 nm K 1 3 5 E E 1 Vavilov Landau 38 39 1 20 Bohr Chu 40 41 W K Chu 20 50 Symon 42 Bohr 50 90 Payne Tschalar 42 44
27. 1 2 3 Rutherford 3 032MeV He O 170 1 8 4 He 16 20 Ne e Olaa O TWH Q 0 1 1 Olaa 0
28. 2 Pb Bi Pt Pb WEEE RoHS 6 Bi 30 50 1950
29. 6 173 6 1 N P Barradas C Jeynes and R P Webb Simulated annealing analysis of Rutherford backscattering data App Phys Lett Vol 71 p 291 1997 2 M Mayer SIMNRA a simulation program for the analysis of NRA RBS and ERDA AIP Conference Proceedings Vol 475 1 p 541 1999 3 E Szilagyi F P szti and G Amsel Theoretical approximations for depth resolution calculations in IBA methods Nucl Instrum and Methods B 100 1995 103 4 J F Ziegler J P Biersack and U Littmark The Stopping and Range of Ions in Solids Pergamon Press New York 1985 5 J F Ziegler RBS ERD simulation problems Stopping powers nuclear reactions and detector resolution Nucl Instrum and Methods B136 138 1998 141 6 L R Doolittle A Semiautomatic Algorithm for Rutherford Backscattering Analysis Nucl Instrum and Methods B1S 1986 227 aet aret
30. ERD RBS 30nm 5 4 3 5 4 2 5 4 2 15 Hid C Sum 2 0 14x10 cm CHS BARI 014x10P cm 2 66x10 cm 0 14x10P cm
31. 2 41 3 2 E Ge ete Oe eee re
32. 4 125 DRAM MOCVD Applied Materials Primaxx Aixtron 72 MOCVD SBT MOD 15 6 p 100 Si SIO Pt Si 200 nm
33. RBS Rutherford Backscattering Spectrometry 1 mm 1 cm 10 Pa 2MeV 1 2 2 a MeV ea 10 m 10m 3
34. swift ion beam ion beam analysis 2 2 HEIS High Energy Ion beam Spectrometry GeV TeV 18 swif high energy
35. 9 sin 0 90 0 36 1 0180 100 deg 170 deg La Lara ra Doa rr barras a tt e 1E 24
36. XRD 853 165
37. Su m 1 25 m 200 3 5 MCA 10 1 10 18 16 keV ch Kapton 200H C22H40N205 80 30 Energy keV 200 400 600 800 1000 1200 E0 1309 GVM1322 keV E0 1507 GVM1522 E0 1704 GVM1722 E0 22475 GVM2500 keV Al He He counts 10 20 30 40 50 60 Channel gain 200 0 925 10 3 6 1 Sum He H 1309 keV 1507 keV 1704 keV 2475 keV 1704 keV
38. CHS x E x SE dE dx d X s dx EME 2 2 4 1 gy X 2H Eo dE ape fog 3 249 lee SS E e sg x 72 2 Bd 2 2 3 b 2 Sn N Sn 3 694x10 atoms cm 2 2 4 1 Eo 303SkeV Sn 8 m Sn 1um 170
39. a 1 mm HAZORA 1 m iv
40. 3 4 S Giv 1 22 6x10 3 Pa ow GVM Ar Li 0 2 1 7MV 0 4 3 4MeV 1 0 6 5 1MeV 2 1kV RMS H He 1 20nA G 1
41. 23 26 eV A keV nm 44 1 2 y AEN lt E Se lc E tAE M L2 E AE AW E t AE We We kE kAE L L2 kE kAE 999 kE tkAE ANC p um x 1 3 1 1 3 2 Bragg lt 6 g 2 x x 1 3 2 1 N dx EHRENS LIC MIRR i
42. 4 121 2 LSI 4 1 4
43. REID RF ID RF ID REID
44. 1 2
45. ULSI RTA Rapid Thermal Annealing
46. SBT lr SBTPt SBT Pt 4 2 4 e A 4 2 4 6 A BLO Bi XRD Bi 136 4 SBT Pt
47. 853 163 5 8 5 3 1 5MeV He 01W em 14x10 cm 2 x10P cm 1 4x10 cm 0 150nm 0 30nm ERD RBS 1 RBS RBS
48. UV X 146 5
49. 2 FWHM Virk L 5 6 1 L 26 41 9 A B 51 0 A C 45 8 D 49 8 A 70 MeV 41 X 2 D JD 158 5 A
50. K 3 6 2 3 6 1 Al 4 43 um 30deg 0 48202 B keV 18 16 Ch 108 4 1 9 RMS 1 Eo keV 1309 keV 1507 keV 1704 keV 2 1 KE keV 631 0 726 4 821 4 3 ee T 11 32 18 42 25 60 T 7 Iq UJ L mS E EO ES ch 0 06 0 08 0 10 4 3 5 2 314 0 442 9 573 3 5 keV m 31 5 c 1 8 5 Q amp 4 E 0078 Al fA POT R V 317 0 283 5 248 1 keV am 1 5 1 8 6 2 5 ZBL85 AIOR um OLR 1 3 5 1 Al EFO Bohr 92 91 87 RMS keV 8 Bl1 3 5 3 Al 9 7 8 Chu Bohr 71 73 73 RMS kev 10 EM 4 9 4 6 44 FWHM ch 0 2 0 2 0 3 11 10 3 5 2 KRE 89 84 80 4 sig 5 FWHM keV 12 11 1 RERBA 38 36 34 RMS keV 13 1 keV RMS
51. 1 2 3 3 1 1 THe
52. 2 4 2 23
53. acu TUB PIXE PIXE 2
54. gt k _ 110 4 4 1 4 1 1 Mis Ferroelectric Random Access Memory amp eo he
55. 200nm X BS 2 PD cile o ented 200nm 800nm mene R 5 6 1 A B C C D b e 70MeV
56. sic A Ud edu AM ak ie MM Qt CAN 60 A NN We RF ID PDA Personal Digital Assistance RF ID UO RF ID
57. 3032 3034 keV 23 0 73 b sr 13 keV FWHM 165 62 2 2 2 MCA 2 2 1 BR _ e l E ous Eg Fak GVM Generating VoltMeter GVM
58. SRIM 4 DataFumace 1 ASCT 172 6 6 1 GE x a m J E wq NAM LAC HRS
59. RBS ERD RBS 170 6 RBS RUMP 6 8 16
60. ON COS IBM 1 B 180 c deg 2 2 3 b 3 Eo E Ey SQQ Dax X 2 2 3 b 4 Eow 2655 W keV 2 2 3 b 1 2 4 NRN 2 2 3 b 5 Sm 70 2 3 eL a Sou coy QN 202 008
61. 1000keV 10 t 320nm 3 2x10 em Vavilov Landau Bohr O keV 0 26 4 14 5x10 32x10 x10 1 3 5 2 233 keV 92 1 keV Bohr 2 CO O nabr Os 25 24 3 keV X 1 3 5 3 1000keV 1keV He 320nm Si 900keV SskeV keV RMS 12keV FWHM 12keV FWHM Si 320nm
62. MeV wur Bragg 15 17 CoH CH 18 19 20 Bragg Ziegler 20 CAB core and bond 21 CAB 1 3 3 g
63. 150 5 ea coats 50u m 200H 1cm x 4cm RBS ERD
64. 0 22 43 i pristine Kapton H OIC ratio 5 22 onea O H Surface 0 30nm O 0 16 Surface 0 30nm H 05 10 15 20 25 Fluence x10 5 cm d 5 5 2 0 30nm 5 5 1 853 157 5 6 X nha Onion as Dua Virk 4 70MeV XX
65. IC RF ID RF ID 2 IPv6 ISO IEC 10336 n JIS X 6321 n ISO IEC 14443 n JIS X 6322 n ISO IEC 15693 JIS X 6323 n
66. T 570 0015 2 8 E mail tetuya k eos ocn ne jp
67. Bernoulli 2 2 ZH EI 10 lt gt Poisson x 1 2 5 1 P x ue 25 Xx 10 P x RMS lt gt Poisson ES 2 tg 4 1 2 5 2 27Y 2Y 1 2 5 Y 30 Poisson Gauss 30 Poisson Gauss P
68. 4x10 cm 1 RBS 50 5 3
69. RMS keV 0 3mm 0 5mm 0 7mm ERD 80 PB ED FR 0 7 mm x 4 mm IC 2 8x10 probes cm 2 5 nA 1 nA 3 nA RBS SSD Solid Semiconductor Detector 169 ERD SSD d 23 20 d bo
70. 2 5 1 2 5 1 2 158 88 OD BR 158 6 OD AR 1 100keV 2 100keV din deside MR age 4o firi 2 6 npa m ervE Rus
71. 200nm 800nm Sa oda Adr ee REIL 1 DR E OR eni 853 149 m 30 kak oracio arai da a a Lac aca d aa 11 1 2 5x10 _ e implanted He k i S atomic displacements 2 0 Siw 2 54 FX EL a 0 Q o Oo e 8 6 Sx 204 592 5 20 1 Re 8 is F o BB X D BO c 4 2g 104 a c 4 jo e Tx KS S E E 0 5 o 4 e 4 3 0 0 D 5 0 200 400 600 800 T Depth nm 5 3 1
72. 2 MOD 2Pr 19 1 C cm 2E 103 kV cm 3 MOD 100 nm MOCVD nm MOD 138 4 zx XIV A 100nm MM 1
73. ot Linn p 1 1 1 K kinematic factor K K E 1 1 1 1 E E hi 26 1
74. 0 1W cm RBS SSBD Si surface barrier detector 169 ERD SSBD 15 e 1 522 MeV 5 0 um 3 0x10 cm BAW oN 151 6x105 Pa b r c RC PC 5 4 1 a 5 4 1 b
75. 5 20 ERER keV O a a oO 165 2050 9000 Feng 1994 1 7 50 a 9 50 170 1770 5000 Leavitt 1990 5 Q a a O 170 2000 9000 Cheng 1993 6 2 1 1 Olaa O Leavitt 51 Rutherford Rutherford 2 1 1 E 2400keV 1096 f REACH LC V Bozoian 2400keV A 2 1 1 F 20 2000 BOBS 3032keV 3032keV He 170 Bozoian
76. Counts A 0 10 20 30 40 MCA Channel 9ain 200 0 925 10 3 8 3 80 EOBAORBEA o 20 45 EE 104 3 3 8 2 y AE FWHM E p pe e Umst keV 80 80 20 0 56 1 44 71 80 73 25 1 0 2 55 84 80 70 30 1 0 2 55 84 80 65 35 1 13 2 88 84 80 60 40 1 29 3 3 100 40 0 3 3 msr 100keV A 8 3 7 1 13 84 d 3 8 4 3 9 3
77. Bohr Chu Vavilov Landau SRIM TRIM 17 1 49 Bohr Q3 N t Q2 keV 2 4z eZ Z Nt 0 26Z Z Ni 10 atoms cm 1 3 5 1 3 23 4 1000keV 1keV He Z i 2 7 8 Si gt 14 N 5x10 cm 10 Ziegler Biersack Litttmark
78. 2 3 RF ID RFID RF ID E PT
79. 2 2 Z PZT SBT Pt lt 350 CITE CTT 9 F
80. 30 20 4820 K 28 1 20 5001 K 31 9 0 4632 E 1 507 keV 726 4 28 keV RMS 28 keV 35 keV RMS 21 keV RMS 442 9 keV Al 1 amp 8 CD FR IE BE X 72 keV um 290 nm 0 3 hm 3 8 10 mm
81. Bi Ta Sr O Bi 15 96 0 059 x10 cm Ta 15 64 0 067 x10 cm Sr 7 765 0 090 x10 cm O 64 70 0 570 x10 cm SBTPt Pt SBT 0 100nm 100 200nm jee 64 70 0 570 x10 cm SBT SBT Pt
82. 2 2 3 b 1 Ep 3035keV Sn K k 170deg Sn 0 8747 1 122215 2655keV 1 1 1 1 643ch 2 2 2 2 2 2 2 1 Sn z 5o M 118 71 Z 2 M 4 003 Sn N 7 2816g cm 3 694x1022 atoms cm k 170deg 0 8747 X 2 2 3 b 1 3035keV Gh we t 0 cos o nm Nr 0 cos a atoms cm 2655keV Sn 642 6ch 643 ch To 3035keV cos 0 8 i ere To cos B oa B 2655 W keV Sn 641 6ch S SE MCAIch
83. 1 3 1 1 3 3 dics MA E25 05 59 030 dt energy straggling 2 48 1 1 2 2 1 3 5
84. 3umc10umfiio WA LIZ LIE IRBS MeV 0 1A 0 2A 1 2
85. 2 152 5 RBS ERD RUMP 9 SRIM 10 1 5MeV He Tirira et al 9 RBS ERD RBS ERD 5 4 2 BLOM 5 4 3 5 4 2 1 5 MeV He 85 LAx10 cm H 169 CaHioN20s JWw u UJ k
86. 154 5 5 5 5 5 1 1 5 MeV He 1 410 cm 2 8x10 cm 1 4x10 cm 0 30nm 30 60nm 60 90nm 90 120nm 120 150nm 150nm 1 4x10 cem C H 10 22 0 45 1 8x10 cm
87. 6 171 SIMNRA RUMP RUMP RUMP 2
88. Se ZBL85 1 3 3 2 1 3 3 3 1 3 3 4 oh at 54 1 1 Bohr XX 1 3 5 1 Chu 1 3 5 4 BQ 1 3 5 Bragg 1
89. SEM 12 MeV RBS Rutherford Backscattering Spectrometry
90. 5 7 Virk 70MeV C G5um 1MeV 3 4MeV 4
91. eV 10 atoms cm 1 45 3 4 a b c RBS i 2 2 LJ COD L 1 j EUT E Sme tne mn mn 1 m n 1 Bragg 15
92. IL 0 45 Al 6 20 30 2 1 5MeV 20 80 FE KIKA 20 8 80 10 DOTEA Q 1 4 msr 3 7 1 w 84 keV 71 keV Hydrogen Energy keV 200 400 600 800 4000 E0 1507 keV 4 45 um Al foil oO 80 oko 3000 3 c NAA 20002 2 ES O
93. RBS SrrBiTazO 7 1mm CH SOC HSBC IE 200nm x 200nm 1000 MOD XRD fuorite H Bi B 9 BiO e 0 a a 50 MOD SBT 4 2 4 7
94. cc 4 1 1986 2 tier FOR 1995 3 Mi mp AE 1999 4 D J Taylor ed Ferroelectric film devices Academic Press San Diego London Tokyo 2000 5 DIRECTIVE 2002 95 EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 Janu
95. RBS R 2 2 2 1 2 2 2 1 100 0 90 E 3 785 0 001 x Ch oo oo 222 7 0 5 keV I 2 2 2 1 RBS RBS Si 3 471 Ch x3 785 Ch keV 13 14 keV FWHM 5 580 keV RMS x 2 2 2 2 SSD1 0 900 SSD2 230 925 66 2 S 12keV FWHM RBS 2 2 2 1 303SkeV He 10nC
96. n M HUE ANI 1 l5 MESROBKCONMNE PDA 2 ubiquitous computing 10 4 119
97. 3 6 1 1 5MeV 5mm Al 3 6 1 He 80 Kapton200H 2 uC 0 7mm L KIA 30 30 iml 10 Pa 7833 95 20 Al
98. Eo 1507 keV He 0 5 mm 0 7 mm 80 T Kapton 30 2 33 msr 84 keV FWHM 3 6 Kapton 110 nm 3 6 1 2 uC C MCA 18 16 keV Kapton Ich 2500 Bd 3 8 3 2 110 nm 10000 1 Al X 3 6 2 rare 3 7 85
99. RFID 120 4 REID RFID
100. PET polyethylene terephtalate MeV 144 5 K 5 1 1 l 5 5 1 1
101. Si 320nm K 1 170 160nm Bohr Bohr 1 0 3 4 Q 50 1 R 45 Lindhard Scharff 1953 amp Chu 1976 41
102. 1 2 3 5 853 155 045 Y 040 035 o 0 354 ee 8 030 EK O os 030 I 025 t 0 20 0 15 0 10 05 ky 10 100 120 M 25 20 per ma 5 5 1 5 5 2 H 0 30nm 5 5 1 1 5 MeV He 1 4x10 cm 2 8x10 cm EC 1 410 cm
103. SBT 1 at 4 137 Pt 4 5 at 4 3 4 o E MOCVD IECIT ores 1 Cu Ke X MOD y am ER Y AKI k 0 Bi 0 MOCVD XRD
104. DRAM Dynamic RAM SRAM Static RAM 1 1V SV EEPROM 4 111 EEPROM 3 EEPROM Flash FeRAM 1
105. 1 3 2 Bragg 1 3 3 Zicgler Biersack Littmark 1 3 4 1 3 5 1 3 6 1 3 7 1 4 1 52 1 Pd 54 2 2 1 O a a O Rutherford 58 2 1 1 Rutherford 2 1 2 2 2MeV 3 2MeV He SO 2 1 3 Leavitt Cheng 2 2 62 2 2 1 2 2 2 MCA
106. DRAM DRAM 116 4 LSI SiP system in a package C IC
107. WK E A TR ER BR 8 ME ak David Greene Lawrence Hunter FET CAP Araujo ZA E
108. Pt Bi Pt MOD MOCVD 0 30nmm 17x10 cm 2x10P cm MOD MOCVD 8 5 M 4 2 4 3 BLUE 4 2 4 4 SBT 1 at Pt 4 5 at 4 139
109. 1992 Symetrix C A P Araujo SBT 71 FeRAM EEPROM LAV 100nsec 10 MRAM Magnetoresistive Random Access Memory u sapie OUM OUM Ovonics Unified Memory 8 F
110. 5 4 1 a 3 4 1 b b 1x104 Pa 1MeV 3 4MeV He RMS 1keV 0 5mm 0 5mm 0 7mm 85 0 7 mm x 8 mm LEBT He 14C 1 4x10 cm 2 nA 1 522MeV
111. 2 71 1 amp E Eou e kE o gt o g Q W ne Abd ee cos cos a 1 E e E Ne I 2 2 3 b 13 o E Q W cos a cos D T 2 2 3 b 12 BUD Sn ZBL85 2 2 3 b 2 ZBL8S Sn T 100 89 05 2655keV co e 1 83 85 3035keV N D gt l T eV 1 0 atoms cm O T l 100 1000 4He keV N Sn 3 694x10 atoms cm Eo Sn 83 85 eV 10 atoms cm e kEo Sn 89 05 eV 10 atoms 10 atoms cm 2 2 3 b 2 cos 5deg 0 9962 o Sn 170deg 1 425 x10 cm7sr Q He 10uC 6 242x10P W 3785 eV ch 3785 eV ch 3 694 x 10 atoms cm x 163 0 e V 10 atoms cm 2 2 3 b 14 6 286 x10 em ch 1 Q sr x 163 0 eV 10 atoms cm H or 1 425x10 cm sr 6 242 x 10 3785 eV ch eV n 4 842 x 10 sr counts ch H counts ch 2 2 3 b 15
112. a matured 2 Ho 1 nuo tk ae 1 MeV
113. Gibbs Thomson MOD 140 4 Ad RTA RTA SR ei
114. Virk XX 5 6 1 2 1 5 MeV He H X 8mm RBS ERD 8 mmx90 mm ARHI B 2x10 cm C 5x10 cem D 1x1015 cm X 14 d 6 3 A 22 d 4 1 A 26 d 3 4 A 3
115. PIXE SIMS C 1 10 10 21 MeV
116. 43 1 3 Si 30nm 1 3 1 m NU dn A tts Mi ABA ZRII ICAI CIB El i nM 25 0 05 5 nu i RE
117. H MeV 5 2 PMDA ODA B ZF2Z H LSI 5 2 1 CHioN20 CHR ANAT hv HAO BALE H 6 5 2 1 C22HioN20s H 44
118. 1 3 6 1 AR Im 1 1 1 H Geiger and E Marsden On a Diffuse Reflection of the a Particles Proc Roy Soc vol 82 pp 495 500 1909 2 E Rutherford The Scattering of wand Particles by Matter and the Structure of the Atom Phil Mag vol 21 pp 669 688 1911 3 J R Tesmer and M Nastasi eds Handbook of Modern Ion Beam Materials Analysis Materials Research Society Pittsburgh 1995 4 W K Chu J W Mayer and M A Nicolet Backscattering Spectrometry Academic Press New York 1978 5 mR 3 B 1974 6 AW 2000 7 M Bozoian K M Hubbard and M Nastasi Deviations from Rutherford scattering cross sections Nucl Instr and Meth B 51 311 1990 8 J L Ecuyer J A Davies and N Matsunami How accurate are absolute rutherford backscattering yields Nucl Instr and Meth 160 337 1979 9 H H Andersen F Besenbacher P Loftager and W M ller Large angle scattering of light ions in the weakly screened Rutherford region Phys Rev A21 1891 1980 10
119. Energy MeV 0 4 0 6 0 8 1 0 140 E T T T T T T T T T T T T 120 100 H 17x1015 Hicm p at the surface S 80 CIA Q E in Pt O co MEMEELTCTUT a in Pt H 1 JA x in SBT SA id H 2 0x10 H cm 20 PdA W at the surface W 20 40 60 80 100 MCA Channel 4 2 4 8 MOD MOCVD f MOD MOCVD 4 2 4 8 MOD MOCVD ee 2 232 MeV He 7 0x10 cm 2s 1 4x10 em Tbn KEK 20 9 3 um Al ee MOD MOCVD 0 30nmm 17x10 cm 2x10 cm MOD MOCVD 8 5 V Bd 4 2 4 3 4 2 4 4
120. Fink Hmatowicz 3 200keV Ar Lewis Lee S1 200keV Si CO H CO 540 E 2 pyrolysis 7
121. 4 2 2 1 124 4 _ MOD LSMCD Liquid Source Misted Chemical Deposition 4 2 2 1 2
122. Bi K P N ta 0 E ES HIRBS Heavy ion RBS 3 0 024 KK 0 024 M 16 0 00034 1MeV M 207 nt RUE A TTR RELE JS BU TO XE SERA Ze S 33 38 qi dk dM 0 024 24 keV 1amu 1MeV dK dM 67 2 3 4567 3 10 100 OD B 1 1 4 K A 34 1 1 2 Rutherford 3 1 2 1 r4 9i O RENS O em 7 DARIE X 1
123. 3 Pt SBT Pt A SBT Pt SBT 4 133 RBS NINE ON Energy keV 2400 2500 2600 2700 2800 1000 Experiment Calculated Sr at the surface Bi 71745 267 85 C NE y Ta 54462 233 37 800 PTPLr i Sr 7308 86 01 Pt 2 600 5 Ta at the surface Ta at the interface 789keV 674ch O 400 of SBT and Pt mE 2662keV 641 ch Suspe EID Slee e C 200 560 580 600 620 640 660 680 700 MCA Channel 4 2 4 6 MOD SBT
124. 2 73 4 Energy MeV 2 2 2 3 2 4 2 5 2 6 2 7 5000 4000 L 3000 5 o 2000 3 035MeV 4He 10uC Sn a p 5deg 1000 Q 1 737 msr 0 500 550 600 650 Channel 2 2 3 c 1 Sn Q 1 737 620ch 640ch Pb Energy MeV 1 0 1 2 1 4 1 6 1909 ji 3 035MeV 4He 5uC SiO2 101 1nm Si E A a B 5deg 8004 2 6004 5 J q 4004 j Q 1 737 msr 200 Y Le eti ts aa KHU on i oi a j ru rtm aD MEC CN 04 Das 400 500 600 700 800 900 Channel gain 200 0 90 2 2 3 c 2 SiO gt 101nm Si 2 2 1 2 0Q 1 737 msr 74 2 2 2 4 Sn
125. c d e
126. 129 Pt 111 Si 400 N N gt A The MOCVD sample fluorite 111 fluorite 200 Intensity arb units 11 13 20 10 02 1 io eo gt The MOD sample e 208X028 220 20 30 40 50 60 70 20 deg 4 2 4 1 MOD MOCVD SBT X 2Pr 2Ec 2Pr 19 1 uC em2 SBT 2Ec 103 kV cm SBT Polarization uC cm2 200 100 0 100 200 Electric Field kV cm 4 2 4 2 MOD SBT 130 4 b 4 2 4 2 MOD 100 m 7850 mm PUSBT PUSIO Si Sawyer Tower Radiant Technologies RT 66A 10kHz
127. NRA Nuclear Resonance Reaction Analysis X PIXE Particle Induced X ray Emission PIGE Particle Induced Gamma ray Emission mom c MN ik ERD Elastic Recoil Detection Ion beam Channeling Technique MeV 1 3 GD 1 Rutherford RBS RBS HIRBS NRA X PIXE
128. Q 1 2 1 1 lt gt lt gt o Q 7 2x 1 2 1 3 1 2 2 SI 2 do Ze 4 E sin 0 cos po 31 324 dQ 4 4ze E sin 0 ii f sin 3 3 Bd 1 2 2 He Zi 2 Bi Z 83 90 180 b bam 1 b 10 cm 2 1MeV 3MeV 1MeV 3MeV 9 170 100 100 170 3 Rutherford
129. sou X 5 7 3 CE A BR IC eB Et C EO KM ABAD SEM ff SEM Scanning Electron Microscope 4x10 em 2 6 3x10 cm X 5 7 2 5 7 3
130. FET 4 123 4 2 4 2 1 2 3 JED RBS MOD Metal Organic Decomposition MOCVD Metal Organic Chemical Vapor Deposition Pt SBT Strontium Bismuth Tantalate
131. SiO SiO 891 ch Si 530 550 ch yr s 867 ch SiSiO 3006 keV 3086 keV S10 560 ch 2 2 1 3 KFP 1520 1524 3066 keV GVM keV keV 1000 4 5 1490 1494 3006 1495 1499 3016 1500 1504 3026 1505 1509 3036 1510 1514 3046 800 1515 1519 3056 1518 1522 3062 o x x c o gt 1520 1524 3066 1522 1526 3070 1523 1527 3072 1524 1528 3074 1525 1529 3076 600 Counts La E E EI BA O 4 1527 1531 3080 M 1530 1534 3086 510 520 530 540 550 560 MCA Channel X 2 2 1 3 SiO 101nm Si
132. go Eou 5 s d S out 2 2 4 7 cosa cos P Low Ar KS 4 S ou AT K 2 2 4 8 OT cosa cosf 874 35 keV dle PO 2 2 4 9 0 9962 0 9962 M 0 3167 keV nm Sou TN 0 3556 keV nm amp 1004 IAz 55 nm 2 2 4 10 1000 nm 35keV S nm 3S nm 1 6 2 3 Olaa O SiO gt 101nm Si 78 2 S 2 3 1 3032ke
133. 1 1 1 25 1 1 1 1 1 2 K 1 1 3 K E 1 1 4 K 1 2 34 1 2 1 1 2 2 1 2 3 1 2 44 1 2 5 1 2 6 1 3 43 1 3 1 WAE OBERE RENDEZ LOPS 8 7 xv x OME Ws OD
134. 101nm SiO gt 5 31nm 181m 13nm 4 1x10 atoms cm Si SiO 1 5 nm 84 2 2 1 J R Tesmer and M Nastasi eds Handbook of Modern Ion Beam Materials Analysis Materials Research Society Pittsburgh 1995 2 G Amsel and W A Lanford Nuclear Reaction Techniques in Materials Analysis Annual Review of Nuclear and Particle Science Vol 34 pp 435 460 1984 3 R Bird Nuclear cross sections for ion beam analysis Nucl Instrum and Meth Vol 168 pp 85 91 1980 4 J R Cameron Elastic Scattering of Alpha Particles by Oxygen Phys Rev 90 p839 1953 5 J A Leavitt L C McIntyre Jr M D Ashbaugh J G Oder Z Lin and B Dezfouly Arjomandy Cross sections for 170 5 backscattering of He from oxygen for
135. 7 C Araujo SBT 48 30a YA 5 2001 13 3 30 1 16 17 i MeV
136. MCA 1 1 785keV Rutherford 20 S i Si SiO 1 5pm CH UN 30nm 4 3032keV Leavitt 101nm SiO Si 2 2 1 fi MCA 2 2 2 2 2 3 c 101nm SiO Si 30 nm 2 3 1 3032keV 1 5uC 5 170
137. MS DOS RUMP RUMP M Thompson de HM NU DANUBII AA Lo Du M ia t5 1090 0
138. MOD 7 gem SBT 8 8gcm 20 RBS 4 3MeV PC o a C Cd 4 2 4 b Pr 19 1 uC em E v SBT 2 Srm1 00 Srioo Bi2 06 0 03Ta2 02 0 0308 33 0 17 MOD
139. PHA Pulse Height Analyzer MCA EG amp G ORTEC 142A EG amp G ORTEC 572 500 nsec Shaping Time 0 5 sec Wilkinson Labo 4803A 200IMHz 13bit 20 0 100 200 500 IK 6 0 5 1 5
140. 2 1 2 1 3 2 1 H Geiger and E Marsden On a Diffuse Reflection of the a Particles Proc Roy Soc vol 82 pp 495 500 1909 2 E Rutherford The Scattering of amp and 8 Particles by Matter and the Structure of the Atom Phil Mag vol 21 pp 669 688 1911 3 J R Tesmer and M Nastasi eds Handbook of Modern Ion Beam Materials Analysis Materials Research Society Pittsburgh 1995 4 W K Chu J W Mayer and M A Nicolet Backscattering Spectrometry Academic Press NY 1978 5 MeV NT 1700S 97NHM 9027 1 3 1997 1 nl ise 25
141. 2 1 T Kaneko M Watamori H Makita C Araujo and G Kano Damage Evaluation after Ion Beam Irradiation on Polyimide Films using ERD and RBS techniques simultaneously Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 2004 in press 2 T Kaneko M Watamori H Makita C Araujo and G Kano Depth Profiling of Hydrogen and Oxygen in Ferroelectric Films Using High energy Ion Beam Integrated Ferroelectrics Vol 53 pp 391 399 2003 7 1 T Kaneko M Watamort H Makita C Araujo and G Kano Damage Evaluation after Ion Beam Irradiation on Polyimide Films using ERD and RBS techniques simultaneously The16th International Conference on Ion Beam Analysis June 29 July 4 2003 Albuquerque NM USA 2 C Araujo RBS ERDA 50 2003 15 3 30 3 T Kaneko M Watamor H Makita C Araujo and G Kano 4
142. 30 150nm 0 30nm 70 300keV Al 853 153 Energy MeV 0 4 0 6 0 8 1 0 140 EE 1 522MeV He 120 f RBS 1 4x10 4 cm 92 5nA 7 85 100 PN 169 0 5mmo As RESER SE iE 1 950msr S eL 4 40 20 0 m 100 200 300 400 500 Channel 5 4 2 RBS 1 5 MeV Het gs H
143. X 20 3 Ziegler Biersack Littmark Bragg 46 1 22 27 361 g E g EE gt 2 c e A 1341 100keV TERDA
144. 4 1 2 3 4 4 l mu 25 1 MeV
145. Qs Ce F 05 Y 8 3 9 0 kev 2 2 4 5 2 5 EI12 keVI RMS 22 BRIAR ABBE c RR ale ATG RIAA DIED BE Sn 21keV FWHM 9keV RMS D 9 12 215 keY 2 2 4 6 15keV RMS 35keV FWHM 2 77 M i FWHM RMS fili 2421n2 2 35 1um UE 9 keV RMS 2019keV 35keV 2054keV 1984keV Sn 2 2 3 b 6
146. 10eV Q Total y 2 2 2 2 2 Q Beam Q Detector o FoilStraggling Q FoilThickness o Geometry E 1307 keV Q nu 36 keV CH OED Q gean 1 keV Q Detector 3 1 keV Q FoilStraggling VB keV Qn 05 Y G9 UF 61 W 3s the 3 6 1 2 3 1 K PEM UL Sos MCAlch Kapton z 2 2 3 b 6 rz 3 W _ 18 16 x10 2344pum K S He So H ME 40 70 7 ut cos cos 0 1736 0 3420 3 6 2 c 80 8B 70
147. Be ed a B RE C D LOS 1
148. Ga MOD SBT 190 nm Bd 4 2 4 5 Pt amp SiO 190 nm 5330nm X 4 2 4 4 MOCVD SBT FESEM HAE CHS nm MOD SBT 120 nm 4 131 SEI 30kV X70 000 100nm WD 2 9mm a MOCVD SBT SEI 3 0kV X140 000 Onm WD 3 0mm 4 2 4 4 MOCVD SBT FESEM 4 2 4 3 132 4 onm 4 2 4 5 MOD
149. 3 1 2 Q O QPR gt 3 1 1 DATERE p Bi Pb N o Q gt 3 1 2 7833 89 3 2 KK 1 1 2 16 E k 1 1 1 1 E 0 He K 3 2 1 1 0 9 0 8 0 7 K factor 0 6 0 5 0 4
150. kE W s zh s Be 2 2 3 b 6 cosa cos 8 2 2 3 b 6 7 id 2 2 3 b 7 To k Sy S out Sa MCA 1 lt 1 2 1 3 7 7 C 1 Ey W H dE Q Q N I 2 2 3 b 8 0 E Eee b ee j x k S Sou T i cos cos f En iee 2 2 3 b 1 cos a cos a rE W 6 He dE Q N ZK 2 2 3 b 9 o TS m Ft n T k Si S ou 7 S coOs cos f Q Q Kr Sou H 2 2 3 b 10 cos cos f 2 2 3 b 9 SUSHIL c 8B s n Or MT Eou Ho 2 2 3 b 11 O cos cos N s Taylor
151. PMDA Pyromellitic Dianhydride ODA 4 4 Oxydianiline 853 147 70 MeV 100keV 200keV Fink 13 1 Davenas 2 150 keV N
152. E H keV 3 878 0 001 x Ch100 173 5 0 58 J 3 5 1 E H keV 1 816 0 001 x Ch200 108 4 1 0 3 5 2 3 6 Al ALTERI 2 702 g cm 6 031x10 atoms cm AI Sum 10um 15um 3 6 1 Al He 03838 BE m 87V 36 H 4 3 6 1 ALMICMTAKBRENVU VALORES RUE 5um 10um 15um He 1575keV 2850keV 3880keV H 470keV 780keV 1030keV 3 6 1 35um 10um 15um AI 1 SMeV 2 8MeV 3 8MeV Sum Al 1 SMeV
153. REID RFID RFID
154. SSD Ch 200 x 0 90 2 120 x Ch 100 x 0 90 56 19 2 2 2 3 Ch 100x 0 90 1 945 x Ch 50 x 0 90 51 85 2 2 2 4 E 3 785 0 001 x Ch ogo 99 222 7 0 6 keV st 2 2 2 2 E 1 785 x Charos 122 4 keV 2 2 2 5 E 7 364X Ch og 419 0 keV 2 2 2 6 2 2 3 a 1 2 1 3 ru 5 2 a DEM DEE Ag out Bee Last L 2 2 3 a 1
155. 4 0 30nm 14 3 5 0 30nm RBS 6 X 70MeV 7
156. 200nm 853 Intensity arb unit 5 6 1 1 5 MeV He x VB IE E SA37buHASUERO X A B 2x10 cm C 5x10 cm 38 OD 1x10 cm L 5 6 1 20 deg A 13 81 Pristine 21 43 25 79 B 13 68 2x10 21 26 cm 2545 C 13 59 5x10 2118 cem 2547 D 14 18 1x10 21 70 cm 25 81 Width b rad 0 03521 0 03761 0 03778 0 03379 0 03933 0 03101 0 03435 0 03548 0 03455 0 03878 0 03726 0 03178 Crystallite Size L 44 1 41 7 41 9 46 0 39 9 51 0 45 2 44 2 45 8 40 1 42 1 49 8 159 D 1x1015 cm B 2x10 4 cm 014 cm 160 5 5
157. MeV RBS 1 2 2 1 2 2
158. e 30 150nm 2 1 2 dba
159. 1 4x10 cm O C 22 0 23 RBS X 5 4 2 1 8x10 cm 0 30nm 26 MAB 5 1 156 5 14 3
160. 2 3 2 1 Si Si 150 12 537 81 3 N 4 N 696 26 X 0 037 2 3 2 2 4 SiO 150 12 2 3 2 1
161. Z c E 170deg 0 03220 b sr c E 170 deg 0 73 b sr Ed 2 1 1 z SiO 82 2 n amp nO SiO gt p z 2 2 3 b 1 X F E us Ey 7 8 3082 keV 20 cos a 0 9962 3032 0 9229 keV MCA1ch W 1 785 I Leavitt 1 3032keV 0 731 b sr o 3031keV 0 715 b sr SiO 4 520 nm 0 723 b sr 3032keV x 203 4 x 10 keV H 0 9 Q g N OR x35 02 786 counts ch 0 0322
162. DRAM 4 1 2 1 4 RE ID Radio Frequency Identification IC 4 1 3 RF ID RF ID Radio Frequency Identification IC 2 4 RF ID
163. 5 7 1 He 85 15 3uC 2nA 85 E KIA 15 34C 2nA 1 522MeV He 3 086MeV 853 161 mm sees aR G of 5 kV 300um T 20kV 300um FB RA 5 7 2 SEM 1 5 MeV He 85 2 8x10 cm 2 CE 162 5
164. 853 145 HO 1 _ UV SEC ETE ARA COHIYN IZ ERBZSHNS MeV ERR ORC a MC NO A A 1 T pacc p
165. CR 39 PADC poly allyl diglycol carbonate 14 15 _ 853 167 5 1 A Chapiro Nucl Instr and Meth B 32 1988 111 2 J Davenas G Boiteux and M Fallavier Nucl Instr and Meth B 3
166. PIGE ERD 19 G 1 i
167. 1 10 Bi x 4 2 4 6 A Pt Bi Ta Sr Bi 15 96 0 059 x10 cm Ta 15 64 0 067 x10 cm Sr 7 765 0 090 xl0 cm 4 2 4 6 A Bi Bd 4 2 4 6 4 2 4 7 64 7040 570 x10 cm AIE 134 4 FIB 190nm
168. 1MeV S 300eV nm 3 5um 7200 1 100keV
169. K 2 2 3 a 1 rq Lout QG 1 3 mm 117 mm 2 1 msr 2 5 mm 158 mm 3 2 msr ra 1 2 1 3 Q 68 2 b MCA 1 MCA Sn
170. Rutherford 1 4 9 1 2 2 1 CGS _ Z Z e 1 p ETO AE cos e 14398x10 MeV cem He 1 MeV Rutherford 1 4 9 AUCH He Tirira 1 1 R E 6 oe A Ep 4 4E AES X 3 3 2 CRHDEH ECHENORBEA 6 Ai A 3 3 1 K 3 3 1 1 44 40 0 2349 3 3687 5 2445 1 7350 92 3 3 3 1 ZKA 10 2030 Tirira 1 Rutherford D S ME ECC C
171. 180 30 Y 1 n 0 12 mol1l 2 BI C4H4CH CoHs COO CAS 67874 71 9 X 4 2 2 1 2 Sr C4HsCH C gt Hs COO CASE 2457 02 5 2 Sr Bi Ta 1 2 2 2 1 ICP inductively coupled plasma emission Ba 2 ppm Ca 0 9 ppm Na 0 3 ppm Zn 0 3 ppm Al Fe K Mg x 4 2 2 2 PVSiOz Si 2 i 1500rpm 30
172. 0 7mm 4mm C MCA 18 16 keV Kapton Ich 2500 3 8 3 MCA 1 29 110 nm 10000 1 Al R 3 6 2 UE M BH 3 1 J Tirira Y Serruys and P Trocellier Forward recoil spectrometry applications to hydrogen determination in solids Plenum Press New York 1986 2 J L Ecuyer C Brassard C Cardinal J Chabbal L Desch nes J P Labrie B Terreault J G Martel and R St Jacques An accurate and sensitive method for the determination of the depth distribution of light elements in heavy materials J Appl Phys Vol 47 pp 381 382 1976 3 B L Doyle
173. 3 C Araujo MOD Pt 4 2 2 X MOCVD 4 2 4 4 11
174. NRA Nuclear Resonance Reaction Analysis ERD Erastic Recoil Detection 1 3 1 4 2 13 pr
175. e 2 232 MeV 93 um 5 610 cm 128 4 RBS ERD RUMP 19 SRM 20 2 232MeV Het 4 Tirira et al 21 3 032 MeV Leavitt et al 22 4 2 4 MOD SBT a X 4 2 4 1 SBT a 5 5224 b 5 5241 tetragona c 23 0264 RAW fec a 5 37 5 446 MO M Sr Bi Ta XAW I a 5 4 ia cubic a 10
176. Zo 12 3032keV 20 0 3200keV V 60 2 3 0 8 Leavitt 1990 Rutherford o o e EN 0 2 Diff Cross Section 10 24cm2 sr 0 0 Ac T a T2373 T8 HTC TOY 18S TTG ECCO T TESTE TY EST 2200 2400 2600 2800 3000 3200 Probe Energy in Lab System keV E E d x 100 96 sm Or Fi D h o n 100 if a TR Fi E A Hi per Foa qe sec ae S i E 10 e gt a 1 a triremer rrr Tt 2200 2400 2600 2800 3000 3200 Probe Energy in Lab System keV x 2 1 1 50 a a 50 Q 2 3 2MeV 67170
177. 1 4 1 1 1 K 1 1 Bf KK KK 1 1 1 1 K K ORB B 9 1 1 2 15 1 1 2 16 Hs O Si 1 1 4 8
178. 1keV RMS lum _E0 3035keV l 0 ET kE 1000 t F 400 15004 2000 E 999 E 200 10004 d E 100 1 3000 500 ik 1TTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTT 0 2000 4000 6000 8000 Depth MCAch Energy Sn nm nm ch keV 4 2 2 4 1 Sn E 303SkeV He Sn 3035keV Sn Bum 1000 nm Sn Z gt 50 N 3 694x10 atoms cm Bohr 1 3 5 1 Qf 0 26 4 50 3 7x102 1x107 x107 190 keV RMS 14kecV 3035keV Chu 4796 TA L QA f 89 keV RMS 9 4keV RMS
179. 31 _2757keV__ 170d g A 3010keV mj k 170 181Ta 0 9159 o 1091keV 170deg m 3010keV mj k 170 160 0 3625 50 100 150 200 1 1 3 K 32 1 1 1 4 K 1 1 4 4 He He K dK dM 170 M 16 dK Lar 1MeV O o 24keV NII He o a AM e o o Pb e t dM 340eV Pb
180. 4 2 2 2 Y 1 MOD ERE nr SURE Sr1Bi2 2Ta209 f y A E A REO IKIE SC RA 16 I AE vida PVSiO2 Si des 1500RPM 30 2 160C 1min v RTA aoe Bolt Pt v 4 2 3 3 ERD RBS 6 1 2 NRA Cu Ko XX CXRD X Ray Diffractometry
181. 1 xem T 53 1MeV He Au Rutherford 3 1 2 4 3 Poisson Y YY 1 2 1 1 2 2 1MeV He 2msr Si 100 Au 10 1 4 x10 cz XH 1 2 6 6 3 S c Q 1 3
182. 10 16 O 3 032MeV Rutherford 58 2 2 1 Olaa O 2 1 1
183. 786 12 keV FWHM X 2 3 1 1 12keV MCA Ich 14 110 Ed 2 3 2 2 800 4 1 JaA E On et EE 9349 O gop 3032keV 4He 5uC SM FE MCAlch ME a e F siO 4 5nm 4004 F 1 Si 3o E 786 o 2003 E A Toink asya vitbet 1 MOT F 0 3 wd Px F E nid fi 110 A 7 d h 530 535 540 545 550 555 560 MCA Channel Si RMS 12 counts ch l 3 3 4 4 83 SiO gt T 1 5 nm 2 4 2 O c a O
184. O o o O 3035keV 23 3035keV 3070keV 25keV 3245keV SBT Ep 3070keV SBT Eo 309SkeV SBTPt Eo 3120keV 4 135 Pt layer SBT layer SiO2 layer nooxygen EEE E t Energy keV pa E 700 800 900 1000 1100 E0 3095keV E0 3145keV A AA SA VIS lt RAOS PN ONTA d N JN C TE 1 J lt l lt i 180 200 MCA Channel 4 2 4 7 Pt Eg 3145keV SiO Eo 324SkeV Eo 3070keV E 309SkeV SBT
185. AFM Atomic Force Microscopy SEM Scannning Electron Microscopy RBS ERD NRA 4 2 3 1 4 127 X 4 2 3 1 Het AYE ra AEN a s b e PC PC 15 mm x 15 mm SBT b MOD MOCVD C 1x10 Pa 1MeV 3 4MeV He
186. SBT PZT SBT MOD 1980 BiSrsCaCuO SBT LSI MOD MOD
187. 14x10 cem Energy keV oo 400 500 600 700 Ln FESTE Ba L E EET T A Ye S B D TET RE LT RE T EE E RET VT E M ET ST RT S UNT TET NT RET T S E x 120 m B e S p 100 4 F 2 80 T all 1 HU li iP Lu L 8 H i THEE ANI AI PINTA 40 M MM alla T EU Il Ms 1 E 204 NI 1 BE LORD 5 NN 0 T T T1 7 T T T 1 7 T SA aL 200 400 600 800 MCA Channel X 5 4 3 ERD ZEE MAR SIE 2 0 14x105 cm 0 14x10 cm n 2 66x10P cm FR LER 0 14x10P cm 30 150nm
188. 4 117 RF ID RAM RF ID 1
189. 76 2 is E 2 2 4 2 Sn Ed E Bohr E Chu ERK Ed 03 Lo 13 5 Sn 9 o E 02 0 43 2376keV 1 E E 3 0 1 0 47 3035keV S E H TTT TT T T TIT 0 1000 2000 3000 Energy He keV 1 0keV RMS Ium Sn Bohr Chu O pee 1 94 89 keY 3t 2 243 k lt 1 k 2 P 0 8747 x 9 4 kev 2 2 44 RMS 8 3keV 2376keV Chu 0 43 Qo 190 x0 43 82 keV 59 0 keV
190. E 1307 keV 80 BEL KIKA 30 3 7 Szil gyi 10 B AZ 3 7 1 sp ss L out 2 2 2 g d cos B L cosa out 7833 99 ZIG GA gy ga gz 0 59 Low 4d Low 158 mm w 9 mm d 0 7 mm CHS 2 Sant 158 158cos 80deg LARD Apa 1 9deg 3 7 1 A BOARS T a
191. 2 1981 11 L C Feldman and J W Mayer Fundamentals of Surface and Thin Film Analysis North Holland Elsevier New York 1986 1989 12 L R Doolittle Algorithms for the rapid simulation of Rutherford backscattering spectra Nucl Instr and Meth B 9 344 1985 13 M Mayer SIMNRA User s Guide Report IPP 9 113 Max Planck Institut fur Plasmaphysik Garching Germany 1997 14 M Mayer SIMNRA a Simulation Program for the Analysis of NRA RBS and ERDA Proceedings of the 15th International Conference on the Application of Accelerators in Research and Industry J L Duggan and I L Morgan eds American Institute of Physics Conference Proceedings 475 p 541 1999 1 55 15 W H Bragg and R Kleeman On the alpha particles of radium and their loss of range in passing through various atoms and molecules Philos Mag 10 318 1905 16 J S Y Feng W K Chu and M A Nicolet Bragg s rule study in binary metal alloys and metal oxides for MeV He ions Thin Solid Films 19 227 1973 17 J E E Baglin and J F Ziegler Tests of Bragg rule for energy loss of He ions
192. 3V 10V 1V 4 2 4 2 8 SBT 190nm 1V 53kV em P 4V SV 2Pr 19 1C cm 2B lt 103kV cm FESEM Field Emission SEM MOD 4 2 4 3 MOCVD 4 2 4 4 X MOD 100 nm 4 2 4 5 MOD
193. 98 3 Sm S He Eo Sow S H K Ey amp L TREE N C22H1N205 1 42 g cm 8 72x10 atoms cm 0 Kapton Hj 132 fi S HeE 2362 eV nm eO IHIEBEZ Bragg E 1507keV SH K Ey 40 70 eV nm 84 keV FWHM 4 6 ch RMS 36 keV 2 0 ch Az At 4 6x T 110 nm 3 6 3 3 6 2 Kapton 110 nm 110 nml 220 nm 300 N N oon O OC O O Hydrogen Counts Ql O O Hydrogen Energy keV 6 200 300 400 500 600 Pc 1 1 Go SECS 9 o d 0 110 nm diuo cb Co Q 2 Ed 110 220 nm OO SN oo o o experiment O aaa r 50 100 150 AA MO oga 200 250 300 MCA Channel gain 200 0 925 3 6 2 Kapton 0 110 Inm 110 220 nm
194. Q Q 2 1x10 sr XX 2 2 3 1 HE zi CN an p x v 72 782 3 lt H gt 4 3x10 MCA X 2 2 2 1 Sn 5 502 ch FWHM rz 6 286 nm ch IZ 5 502 ch 35 nm c 1 3 1 1 3 1 2 2 3 b RUMP 21 Sn 2 2 2 1 2 2 3 c 1
195. RAKI m M 9 9 K 1 1 1 KK S N N lj E EL o o p a He E fezgeBuID 2nmn 2 47v NE B sin Beos JI B sin 9 1 B B 7 1 1 1 K 1 1 2
196. g B 180 30 65 85 90 fm I ERTVC LEDDS CHS AWB 70 90 deg gt 15 3 8 1 30 y K 3 8 1 KIKA 30 y AB y Q msr 65 85 1 9 0 0 70 80 1 9 0 564 1 44 75 75 1 9 1 13 2 88 80 70 1 9 1 00 2 55 85 65 2 1 0 652 1 66 7833 103 3 8 3 80 3 8 2 80 o 20 45 5 K
197. 1 2 2 3 b c 2 2 4 2 3 27 2 3 1 2 3 2 2 4 2 83 2 84 LER D n Li 5 3 3 1 87 3 2 89 3 3 Rutherford 91 3 4 92 3 5 MCA 92 3 6 Al 94 3 7 98 3 8 100 3 9 3 104 3 705 2
198. 158 mm 3 2 msr 2 2 2 3 1 80 90 2 2 6 msr 2 6 2 35 msr 3 8 1 j AW E 7833
199. 350C 12 141 PZT SIMS 14 CVD CVD
200. Rutherford Leavitt 3030keV 20 fF 2000 Bozoian 2400keV X 2400keV 10 2 61 O Leavitt 1990 170 deg Cheng 1993 170 deg x Feng 1994 165 deg tei O Rutherford 3000 3010 3020 3030 3040 3050 3060 Probe Energy in Lab System keV 2 1 2 0 a a 0 2 1 2 Leavitt Cheng x 2 1 2 Olaa O 3032keV Leavitt 1990 Cheng 1993 6 Feng 1994 1
201. 148 5 RBS 5 3 2 SRIM 2003 TRIM H CzHioN20s 1 42 g cm 8 73x10 atoms em 6 1 5 MeV He
202. 2 30 150nm 50 0 30nm 70 3 0 30nm 18x10 cm 26 2 0x10P cm 164 5
203. 1 2 6 4 8x10 6 2x10 S nA 7 DEY 1x10 atoms cm Si nA l 7 100 1x10 cz 130 4C SI m 2 3 2 1 1000 E Ho Tm EE ES SiO2 101nmJ Si E 3042keV Boo ec T e E SiO2 101nm Si o O 4004 a auc Cr E ces 51 0 520 530 540 550 560 MCA Channel SiO 3032keV 1 5guC 5 170 BHA 5 Si
204. 2 3 2 Si SiO 1 5 Inm MCA F 1 785 keV Rutherford 20 25 2 2 SIMS
205. 31 1 2 KICK A GR AE te oc Fe ea PZT SBT 800 CMOS 122 4 RTA Rapid Thermal Annealing SBT Bi O
206. He 7833 105 Eo 1507 keV He 0 5 mm 0 7 mm 80 T Kapton ZABA 30 2 3S msr 84 keV FWHM 3 6 Kapton 110 nm G amp 3 6 3 1 AE 2 uC 30
207. A 1 lt Y gt Q Q Y 2 Q N o 0 0 A 1 2 6 1 1 2 1 3 4W lt AN Q lt Y gt 1 2 6 2 lt gt 111 N AN 1 2 6 3 Q 1 ay gt
208. e 2 Surrey DataFumacell l Max Planck M Mayer SIMNRA 2 DataFurnace NND Ais Se DELHI es se o n l 2003
209. 200nm 3 BW 3 S 1 5MeV He 0 1W cm p 4x10 cm 2 8x10 cm 30 150nm 50 0 30nm 70 0 30nm 25 X
210. C 4H4sBiO e o O Bi3 9c wm MOD
211. 2 2 3 b 12 MCAlch W 1 78S keV ch SiO z I 2 2 3 b 6 r z 3 me W n 4 520 nm kN Sow 0 3625 203 410 319 7x10 cos cos f 0 9962 0 9962 2 3 1 1 Z tk MCAL 2 79 W X 2 2 3 b 9 2 2 3 b 12 Su S Ep So S kE E L ZE MSZO 2 20 g cm 6 62x10 atoms cm SiO IE 88 Bragg 1 3 2 ffi 203 4 eV nm E 3032keV 319 7 eV nm E 1099keV 12keV FWHM a o eM CHS Az At 6 7 x v 30 nm 101nm 13nm 13nm 43nm 43nm 13nm 73nm 73nm 13nm
212. 28 3 Pag pee 10
213. RUMP 12 Chu Bohr Chu Bohr nz Ou ZEE 1 3 5 4 1 3 5 1 2 1 0 ric H E M1 Z2 Ves ie IN 0 8 d M 0 6 0 4 Chu 0 2 20 40 60 80 100 Ca Zr Nd Hg Z2 X 1 3 5 Chu Bohr Chu 46 Szilagyi 47 Au Z 79 2MeV He E M 500keV Chu Bohr 40 1 51 1 3 6 4 Bra
214. FE SEM AFM E XRD ue bind TA RA po
215. 12 keV FWHM 1 keV RMS Al 37 35 32 RMS keV 7833 97 84 keV FWHM Eco 1507 keV 13 keV FWHM 1 Al 2 Al 3 3 RMS Q rora 0g RMS Q detectors Al QA1 0 zes 0czz
216. 160 C 1 260 C 4 RTA Rapid Themal Annealing RTA 16 RTA 2 800 C 60 DC Pt 126 4 8002C 30
217. 2 2 1 1 R FS GVM 19 22 18 kV 2 VIkV E keV E 2V 18 He J 2 2 1 1 E 3V 18 He J 2 2 1 2 EIR GVM Vn V a b VeuE Jab 2 2 1 3 GVM b IIkV
218. 30 He Al 2475 keV Sac VB SMUT LED 80 E KIA 30 Al 4 4 um 2 702 g cm E 1 507 keV 84 keV FWHM 3 6 2 Al MCA 96 ay 3 ag RV EMAN amp BAIR RESTO SR RR Ze bc LIE 6 076 A CAL T 3 4 2 2 3 2 55 msr
219. 0 2 4 6 8 10 12 Hs deg 3 2 1 He K 14 0 2 K N 9 0 0 90 90 3 acs 1 1 2 16 arcsin LO B 4 003 14 58 deg E E EQRO C E E E 1 K E JZ35X WO K 1 K
220. 101 Q om TM ToL R 3 8 1 0 1 Com 5 6 x10 ions cm ol T l 318 a 10 e 3 13 0 S mm 15 3 07 0 7 mm 20 2 99 E 2 S 1409 2 44 g 5e 2 25 50 2 04 lt 55 1 82 60 e 1 59 65 e 1 34 70 edm 1 09 75 edm 0 82 80 0 55 85 p 0 28 Hydrogen Energy keV 200 300 400 500 600 600 M o 70 y 0 564 500 pta d ES gages o 75 1 13 3 yo oO Re gt di o O oc 80 1 o 4003 oc 85 y 0 652 2 a L 300 Beam 1506 keV He a A 2004 Dose 2 uC g O Current 1 4 nA O Sample Kapton 200H pA 100 Recoil Angle 730 deg IT LJ I T T T T T T T T T T T T T T T T T T T T T T T T T T T T T 0 5 10 15 20 25 30 MCA Channel gain 200 0 925 10
221. 6 1 gm He SRIM 5 3 1 85 1 5 MeV Het 10000 370nm 0 025 40 1 39 480nm 3
222. 4 4 1 770 4 1 1 4 1 2 4 1 3 RF ID 4 1 4 4 2 723 4 2 1 4 2 2 MOD SBT 4 2 3 4 2 4 MOD SBT a X b c d RBS xi 5 6 e NRA f ERD
223. 475ch 3035keV 5 lum 1000 nm cos Sdeg 1004 nm 1004 nm Sn 3035keV 2717keV 170 k 2376keV 2376keV 1000 nm cos Sdeg 1004 nm 2 75 o 8 2376keV 2019keV 473ch
224. 6 8x10 cm 50 1 2 Au 10 Au O lt 1 4 x10 cz 8x10 cm db 107 6 2 x10 Si 1 4x10 cz Au 1 4x10 c He Imm 18 C 100210 2 10 Au Au 1 4x10P cm I 1 2 6 6 18 uC Ch 5 2 Bernoulli 2 1
225. 0 1 1 2 2 1 1 GVM 2 63 3032 keV 3032 keV He 2 2 g cem SiO 20 3 eV A 1 3 3 3032 keV RMS 6 keV 30 nm 30 nm 3032 keV 12 20 keV 3035 keV
226. 3 8 1 BAR 23 HUBS B 80 1 9 AB deg RMS 60 65 70 15 80 85 90 o deg 3 7 1 c Ap ov deg 180 deg a p 8 A 8 RMS f 100 3 0 5 mm 0 7 mm 300 mm 22 5 E A 3 x AH X mo lt 0 02 deg B
227. 30nm 3 2 2 1 3 4 4 Ki 2 3 2 t 1 2 6 SiO O O Si 1 2 6 Num SiO MCA 1 geet Bl 4 5nm 3 032MeV He 5 170 1 737 ms
228. eg eee are ee C mU uu ic REID 118 4 REID
229. 0 lt lt do arcsin 6 ee xt 1 1 2 16 8 9 2 K 1 1 3 K K Ed 1 1 3 4 CHe He K 1 o 2790keV__ 170deg gt Bi Em L 3010keV k 170 209Bi 0 9268 o 2510keV__ 170deg O M Sr 3010keV kg k 170 88Sr 0 8340 kinematic factor Sr k 0 8340 170 Sr
230. 1 4 0290 9 Correction Factor F o o oO co N A o CO o 500 1000 1500 2000 2500 3000 Probe Energy in Lab System keV 1 2 4 PEcuyer 7 O 7Au 2 7Bi 1 99 12 RUMP 1 39 1 2 5 i CH 1 2 1 1 1 1
231. 1mm 170 ch O Si Ti Au Bi Mo M k 170 Eo 2 keV ch FWHM ch 16 231 6 TiO gt 4 304 TiO 9 Im Mag 230 6 SiO gt 4 646 SiO Si 27 98 1714 395 8 3471 Ti 47 95 2177 517 4 3 631 Sn 118 7 2655 642 6 5 502 Ta 180 9 2780 675 6 4 747 197 Au 197 0 2800 680 8 4 233 Pb 207 2 2811 683 6 4 351 Bj 209 0 2813 684 4 4 144 Channel _100 58 84 0 131 0 2642 0 00005 x Energy C 1200 1600 2000 2400 2800 Energy keV MCA Channel Gain 100 0 90 X 2 2 2 1 2 2 2 1 kE 2 2 67
232. W 3 785 keV ch 2 2 2 2 2655 3 785 2651 215keV 641 6ch 642ch Sn N atoms cm N To cos o 2635 W keV Sn 643 2 69 i oe z Sn Sn Ex S E S CE keV nm 1 3 3 1 X m gz Epefore Ds E ore E mo S E x ydx zx 2 2 3 b 1 r Sn Eater e E der k E ore 2 2 3 b 2
233. 114 4 41 2 4 1 2 1 4 1 2 1 FeRAM 1 2 EEPROMSRAM NOR Flash IC FPGA 3 4 IC RF ID PDA EEPROM SRAM
234. SRIM 2003 71 85 L5 MeV He 10000 5 4 1 5MeV He panies sien dares o und ni EM ayes pia E D E A E tient RBS ERD
235. 9 9 KK 2 2 0 2 90 0 nt 30 1 KK K ll 0 lt lt 1 0 lt lt 0 KK x Ens f sin TERET lil gt 1
236. SBT Ga d MOD 4 2 4 6 MOD SBT 3 045 MeV He CH 0 BHES AZF yY AII 40x10 cm s 1 6x10 cm 169 A 3 1 Bi Pt 2 Bi
237. 1 ki 1 3 1 KK 2 3 1 1 K 2 51 2 1
238. 2 2 3 c 1 1 3500 4300 2 2 2 1 msr x0 8 1 7 msr Sn Pb O Sn 500ch 570ch 2 0 1 737 msr 2 2 3 c 1 Q 1 737 msr 2 2 3 c 2 SiO2 101nm Si 300ch 1 3 7
239. ELS 0 12 0 01 Z 0 5 0 1 H 2 1 1 1 E 0 25 0 01 Z 0 4 0 2 He 2 1 1 2 LICGEN 1600 044 180 4 4 He Z 2 Mi 4amu 16 O Z 28 M gt 16amu pg OJ MeV 0 250 01 x8 0 4 0 2 gt 2 4 MeV 2 1 1 3 2 2 4MeV EE 2 1 2 2 2MeV 3 2MeV 50 2 1 2 O a a O ISIE 2 1 1 Olaa O He 3 20 59
240. Tirira et al 30 deg Rutherford 0 4 b sr o N Energy MeV x 3 3 1 Rutherford 3 4 2 He ZBL85 He ZBL8S X 1 3 3 fifi 10keV 0 1 1 3 5 MCA 2 2 2 MCA 7833
241. 3 8 2 102 3 8 2 Kapton dc bo ES o 30 3 6 1 o 65 85 0 7mm dii mm O8 PO 3 6 1 MCA 10 y 65 o 80 c 65 X 3 8 2
242. K MeV 9 m M 1 27 v E mvl 1 1 2 1 KK 2 miv 2 i mz x 1 1 2 2 Eo Lm vol mv mv
243. Depth Profiling of Hydrogen and Oxygen in Ferroelectric Films Using High energy Ion Beam 15th International Symposium on Integrated Ferroelectrics ISIF2003 Colorado Springs USA March 9 12 2003 i 14 4 C Araujo 63 25a B II 2002 14 9 25 5 T Kaneko S Nomura and M Watamori High Energy Ion Beam Scattering Spectrometry for Carbon Thin Film Characterization Israel Japan Binational Workshop on Diamond Science and Technology Tosa Yamada Kochi pref JAPAN Dec 6 7 2001 6 C Araujo 49 28p ZA II 2002 14 3 25
244. MCA Ed 2 2 1 2 SiOx 101 nm Si Vsonisar 3074 ke V O He 5 uC 1mm 170 1524 Panel 1528 GVM 3074keV Vnominal 4He 5uC gt SiO2 101nm Si 170 deg 1000 8004 A T 891ch 2 6004 k 170deg Si 5 S O 4004 200 a put D ama den r 500 600 700 800 900 MCA Channel 2 2 1 2 SiOz 101nm Si V nomina 3074keV He 4 AY snC FR 1mm 170 64 2 S SiO gt 101 nm Si Si HF
245. ST B SEM Scanning Electron Microscopy y X XRD X Ray Diffractometry 4 2 2 MOD SBT 2 SBT Pt SiO Si MOD SBT PVTi SiOz Si MOCVD SBT MOD MOCVD Araujo MOCVD MOD
246. 1 Si RMS 12 RMS 3 30 36 MCA1 SIO 4 520nm 2 3 1 1 CHS 4 520 nm SiO 1 He 5uC 786 Ich Rutherford 122 1 c E 170deg 0 03220 b sr O o OO Nr 0 03220 x107 1 737x107 3 141x10 4 41x10 4 520x107 2 3 2 2 35 02 counts ch NO 2x 662510 4 4110 atoms em URC HIRIZI E Ich
247. 4 3 4 137 4 140 5 1 143 5 2 PMDA ODA 146 5 3 148 5 4 1 SMeV He 149 5 5 154 5 6 X 157 5 7 4WvZu ZWIUWCP E stddo0s4mEuAmOoZi 160 5 8 5 763 5 167 6 1 169 6 173 7 Aki XO BS MeV
248. 93 2 2 2 7 RI 3 5 1 E H G 8780 0013 x Ch100 173 5 0 58 n gt 1900 HEN E Mi Eo eV eg kj ul Si SiO gt 18004 c 1700 X 16004 CTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTTT 400 420 440 460 MCA Channal gain 100 0 925 E H 1 816 0 001 Ch200 108 4 1 0 4 SSD 2 for H detection sn 19004 Eo 2002 keV 150 deg 180043 Si SiO2 Mg MgO TTTTTTTTTTTTTTTTTTTTTTTT k 150deg Eo keV 850 900 950 1000 MCA Channel gain 200 0 925 3 5 1 MCA 2 002 0 004 MeV 150 BE MCA 94 3
249. 3X 1 2 6 4 2 lt Y gt a Q IE No tee lt Y gt lt Y gt 1 2 6 5 s0 c 8 Q 42 1 Si Au Z 79 W 1MeV He 8x10 cm 170 2msr Au 33 b sr CHS MeV lt gt 107 11 10 100 1 2 5 Imm EAR 8x10 cm 100 100 8x10 cm 1 3x10 S 10 1 3x10 Nau Hu 33x10 7 Si 100
250. 7 B 5 7 10keV 5 2 1 5 MeV He H 4x10 cm 2 1
251. Instr and Meth B61 149 1991 46 J W Mayer and E Rimini Jon Handbook for Material Analysis Academic Press New York San Francisco London 1977 47 E Szilagyi F P szti and G Amsel Theoretical approximations for depth resolution calculations in IBA methods Nucl Instr Meth B100 103 1995 48 D Dieumegard D Dubreuil and G Amsel Analysis and depth profiling of deuterium with the DCHe p He reaction by detecting the protons at backward angles Nucl Instr Meth 166 431 1979 49 P Bauer E Steinbauer and J P Biersack Rutherford backscattering beyond the single scattering model Nucl Instr and Meth B 79 443 1993 50 P Bauer E Steinbauer and J P Biersack The width of an RBS spectrum influence of plural and multiple scattering Nucl Instr and Meth B 64 711 1992 51 Leszek S Wielunski Edit Szilagyi and Geoffrey L Harding Multiple scattering effects in depth resolution of elastic recoil detection Nucl Instr and Meth B 136 138 713 1998 52 J Lindhard M Scharff and H E Shiett Range concepts and heavy ion ranges Mat Fys Medd Dan Vid Selsk 33 1 1963 2 57 2
252. 1 1 4 2 c 1 2 fifi 1 2 1 1 1 2 1 3 2 2 1 2 2 1 90 1 2 2 1 Rutherford
253. MV 1 1 2 3 Ds 4 u4 cs mv mv MV 1 1 2 4 2 2 2 V pa 1 1 2 5 8 1 1 2 3 V f v v4 1 1 2 6 1 1MeV eo 10 30keV c 7300 1 MeV c 3727 MeV c MeV 28 1 1 1 2 4 1 vw v V B 1 1 2 6 v V B vy v 2lvo v cos 1 1 2 7 v v v v 2lv v cos 9 vyv Yi E vil le c B 4 2 cost Vo Vo vo 1 K B K 24K cos VK gt 0 ee f cos 0 41 f sin 0 g 1 8 1 1 2 7 1 1 2 8 1
254. 1 2 9 1 1 2 10 1 1 2 11 1 1 2 12 Y 1 gt sin 6 p fi cosQ X J1 B sin 0 gt 0 1 1 2 13 1 1 2 14 1 29 fi 0 lt lt 1 112 3 mg lt 1 lt 1 1 2 14 1 1 2 12 i gt 1 1 1 2 13 D sind 0 lt 9 lt lt NJAN lt lt lt 9 2 1 1 2 14 0 lt lt lt 0 lt lt lt
255. 5 Ch V Bethe Bloch Co AS 1 KKKNS 30 1 47 1 3 3 Si ZBL Ci C5 C C4 C C C Cs ZBL He in Si 2 0720 0 0044516 3 5585 0 53933 1515 2 0 93161 1790 3 0 035198 E lc 36 8 462Z Z M T 2 2 iu az 23 sis 0 5 T X 1 3 3 6 R tV R l is 32 53M E 9 2 235 zz c zi zi g eV 10 atoms cm CH 1 3 4
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258. cm21 o 103 6 b sr Bi 4 1 b 36 23 b sr ti 1 1 1 1 1 1 1 1 1 1 1 1 l RBIBSS b sr 1 Ji 9 057 b sr 13 998 b sr Scattering Cross Section b sr 1TTTTTTTTTTTTTTTT TTT 400 120 140 160 180 Scattering Angle deg 1 2 2 BELA 90 180 He Z 2 Bi 2 83 1 2 3 on VS EW DIED MYO WOME RB HS BAO EMAL lt Ta TH quidc liie m oe d 1 87 d 2 a e a xe e 14 4
259. eV A r 1 3 3 1 A E 1 r 1 2x10 43 A I 1 2 3 2 rk Bohr ao 0 53 A pS x 1 2 3 3 2 lt lt ZZ e go 0 ll X 1 2 3 4 1 2x10 43 4 Rutherford He Zi 2 7 8 7 33 Si Z 14 Bi ZZ e dy 2 E Si ae R 10 eg 1 2 3 5 0 53 s Biii E niga Si ac T 5 MeV st 1 2 3 6 1 2x10 28 4 1 2 4 1 2 3 5 1 2 3 6 7 8
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261. 2 1 i lt Y gt tlcm i Ni atoms cm LED Ni 1 2 1 9 dO KOBALE dO dog Ni gO L ee ONAREN OMR mo DAZU TR dO 1 2 1 1 1 35 aid peu 1 2 1 2 Q lt dO Q 10 sr sg 6 ES
262. 51 SBT orthorhombic a 5 361 c 26 83 c 5a a cubic a 5 54 6 Bi2O ER a 5 39 KERRE X 4 2 4 1 MOD MOCVD SBT X MOD XRD 4 2 4 1 F Zi MOCVD X 4 2 4 1 E 9 29 23 SBT 4 2 4 1 MOCVD 29 111 24 222 25 26 008 115 33 Si 400 200 4
263. 5X 3 2 1 ZESTAL E KE 9 K K K KEKA o ABcos g 3 2 2 1 B 1 0 Pss t 0 8 ae 0 6427 6 Ix p 0 4 0 2 0 0 0 20 40 60 80 Re deg 3 2 2 p d 0 o KI7 72 ERB 7833 91 3 3 Rutherford Rutherford 1 2 2 1 0 1 2 3 He 1MeV
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265. FeRAM FeRAM FeRAM NAND FLASH a 4 115 b
266. Kochi University of Technology Academic Resource Repository IIHHHHHHHHHHHHHHHHHHHHHHH uu Author s OO U0 Citation OHUUUUU DOOD Date of issue 2004 03 Title URL htt p hdl handl e net 10173 227 Rights Text version RI KOCHI UNIVERSITY OF TECHNOLOGY Kochi J APAN http kutarr lib kochi tech ac jp dspace 16 3 Development of Analytical System using Swift Ion Beam and its Application to Characterization of Next Generation ULSI Materials 15 12 26 1046003 Tetsuya Kaneko 3 7 72 13 1 7Z i ii iii iv
267. N E MCAS EED EODD REA Fe KORE He NN Ziegler 27 ZBL85 uu Lt et ZBL8S HB eae E Bethe Bloch LSS 2 1 3 3 2 Eel E Elow maH eink Erow O yo C ye 1 3 3 3 C C ci cs V E mi keV amu gs eV 10 atoms cm eVjnm 1 3 3 Si ZBL LSS C4 0
268. Shiraishi Preparation of Macroporous Carbon Films from Polyimide by Phase Inversion Method Carbon Vol 30 1992 pp 303 304 168 6 6 169 6 6 1 2 3 5 4 4 6 1
269. V 5 5 170 SiO 101nm Si Si 12 keV FWHM 1 keV RMS 2 3 1 1 848 ch 869 ch SiOz Si Si 2 3 1 1 FWHM5 2 ch FWHM7 0 ch ANSM mikey 2Si 2975keV w 150 2975keV 4He suc 5 1004 Pec RUE SiO gt 101nm Si Sde e Sees EE CM i Si p S IN M BAT TERRE FN NN ARAN M m FWHM 12 keV e 820 830 840 850 860 870 880 890 MCA Channel SiO 3032keV k O 0 3625 1099 keV 1099keV FWHM 12keV 1087keV SIO
270. Vnomina He Suc Imm 170 Vaomina 7 3066keV Vaominal 3006 keV 3066 keV 3080 keV Vaominal 3066 keV 3035 keV GVM 2 65 1524 keV 23 3035 18 2 1508 S keV 2 2 1 3 a pec 0 9898 0 002 I 2 2 1 4 Eod 1524 1 Leavitt 1 4 keV 2keV ABC GVM 1 keV 2 2 2 MCA MCA Multi Channel Analyzery
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273. eRAM wee 4 1 1 1 FeRAM 4 113 4 1 1 1 9 ou T FHERR 10 10 10 10 2T 2C 6T 1T 1C 2T IT IT IT 1T 1C ATOR pee 70 85ns 30 180ns 200ns lt 120ns lt 150ns 120ns 30 70ns Ne 1 1V SV 14V 9 20V 12V 3 3V 3 3V al JE A i jua FER anas CER CD ua epe es 2 10ms 1 1000ms 0 5ms 30 180
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276. gg 200 2 inin 1 Q Q Q Qo imin m i n j 1 3 6 1 N t Nt Nyt 1 3 7 TT amp 47 48 47 49 1 MeV 47 1 nt 52 1
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281. ns 50 70ns 70 85ns E T sw TE TE PZT 10510 1 x 5 5 Ant ARE SBT S102 10 10 100 1 1 20uA 1 20nA 1 5pA 1004A 30uA 500 1000uA 1 7uA zm 15 30mA 5 50mA 12 50mA 40mA 40mA 25 80mA 10 40mA SER ici 5 30mA 8 50mA 35 50mA 40mA 25 80mA 10 40mA 2T 2C 2 2 1T IC 1 1 DE 1 2T 2 6T 6 4T 2R 4 2 ui ep 1 FeRAM 2 Flash Memory 3 EPROM 2537 10 15Ws cm 15 20 4 SRAM
282. r O 0 73 b sr 3032keV 1keV 10 10 100 Imm mx0 5x US 0 9662 amp 8xl0 cm 100 bi p RE qx 80 2 em 3x10 counts cm 1 2 6 5 EX N 3 4 E Yp 213x10 1x10 atoms cm 2 3 2 1 0 73x10 1 737 x10 MM S EDMEE 6 8 x O atoms cm OR 1596 Q
283. x 40 1 0 10 20 30 40 50 1 2 5 Y 30 Poisson Gauss 1 2 6 E 1 MeV He O Z 8 Bi Z 83 9 170 O Z 8 0 2964x10 cm sr 22Bi Z 83 36 23 x10 cm7sr Bi Z 83 O Z 8 122 Bi 0 KBE Bi Oo 122 OBI Oo 122 f amp
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