Renesas 3SK318 User's Manual
Contents
1. JEITA Package Code RENESAS Code Package Name MASSITyp SC 82A PTSP0004ZA A CMPAK 4 T CMPAK 4 T V 0 0069 2 4 e2 e B B A i i LU L E He Lp T 1 Reference Dimension in Millimeters i HJ L Symbol Min Nom Max 1 A 0 8 11 l i A 0 0 1 A A la As is 0 8 0 9 1 0 A3 0 25 b b 0 25 0 32 0 4 ika M 2 AP e2 e bi 0 35 042 0 5 J f i b2 0 3 n ba 0 4 c 0 1 0 13 0 15 G 0 11 Al A 4 4 D 18 20 22 j E 115 125 1 35 p i i j e 0 65 A1 7 b i e2 0 6 CN HIG 5 5 e1 He 18 21 24 L 0 3 0 7 b b1 i i i Li 0 1 0 5 i 6 S S eee E e pofo fos c1 ci D05 s ba 0 45 c ba bs 0 55 e1 15 A A Section B B Section Pattern of terminal position areas 4 02 o9 Ordering Information Part Name Quantity Shipping Container 3SK318YB TL E 3000 0 178 mm Reel 8 mm Emboss Taping Note For some grades production may be terminated Please contact the Renesas sales office to check the state of production before ordering the product Rev 2 00 Aug 10 2005 page 7 of 7 RENESAS Renesas Technology Corp Sales Strategic Planning Div Nippon Bldg 2 6 2 Ohte machi Chiyoda ku Tokyo 100 0004 Japan Keep safety first in your circuit designs 1 Renesas Technology Corp puts the maximum effort into making semiconductor products better a2. 3 V Ip 100uA Gate2 to source cutoff voltage Vea2scott 0 5 0 7 1 0 V Vos 5 V Veis 3 V Ip 100 nA Drain current IDS op 0 5 4 10 mA Vos 3 5 V Vais 1 1 V Ve2s 3 V Forward transfer admittance lYesl 18 24 32 mS Vos 3 5 V Vezs 3 V ln 10 mA f 1kHz Input capacitance Ciss 1 3 1 6 1 9 pF Vos 3 5 V Va gt s 3 V Output capacitance Coss 0 9 1 2 1 5 pF Ib 10 mA f 1 MHz Reverse transfer capacitance Crss 0 019 0 03 pF Power gain PG 18 21 dB Vos 3 5 V Vezs 3 V Noise figure NF 1 4 2 2 dB Ip 10 mA f 900 MHz Rev 2 00 Aug 10 2005 page 2 of 7 RENESAS 3SK318 Maximum Channel Power Dissipation Curve Typical Output Characteristics 20 lt 200 Z Vajs 1 7 V Vesse3 V 16V S 150 lt H c lt 1 5V o 12 2 p 14V 0 ej 3 100 6 TIV a 5 8 ga o 12V z Ko 50 4 11V m 1 0V 9 V s lt 08V o 0 50 100 150 200 0 2 4 6 8 10 Ambient Temperature Ta C Drain to Source Voltage Vps V Drain Current vs Drain Current vs Gate1 to Source Voltage Gate2 to
3. KENESAS 3SK318 Silicon N Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819 0200 Previous ADE 208 600 Rev 2 00 Aug 10 2005 Features e Low noise characteristics NF 1 4 dB typ at f 900 MHz e Excellent cross modulation characteristics e Capable low voltage operation B 5V Outline RENESAS Package code PTSP0004ZA A Package name CMPAK 4 1 Source 2 Gate 3 Gate2 4 Drain Note Marking is YB Rev 2 00 Aug 10 2005 page 1 of 7 ztENESAS 3SK318 Absolute Maximum Ratings Ta lt 25 C Item Symbol Ratings Unit Drain to source voltage Vps 6 V Gate1 to source voltage Vais 6 V Gate2 to source voltage Ve2s 6 V Drain current Ib 20 mA Channel power dissipation Pch 100 mW Channel temperature Teh 150 C Storage temperature Tstg 55 to 150 C Electrical Characteristics Ta 25 C Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V BRjDss 6 V Ip 200 uA Vais Ve2s 0 Gate1 to source breakdown voltage V BR G1ss 6 V lai 10 HA Va gt s Vos 0 Gate2 to source breakdown V BR G2ss 6 V laa 10 HA Ve1s Vos 0 voltage Gate1 to source cutoff current ls1ss 100 nA Veas 5 V Ve2s Vps 0 Gate2 to source cutoff current G2ss 100 nA Voe2s 5 V Vais Vps 0 Gate1 to source cutoff voltage Va1s ofi 0 5 0 7 1 0 V Vos 5 V Vais
4. Tel lt 86 gt 21 6472 1001 Fax lt 86 gt 21 6415 2952 Renesas Technology Singapore Pte Ltd 1 Harbour Front Avenue 06 10 Keppel Bay Tower Singapore 098632 Tel lt 65 gt 6213 0200 Fax lt 65 gt 6278 8001 Renesas Technology Korea Co Ltd Kukje Center Bldg 18th FI 191 2 ka Hangang ro Yongsan ku Seoul 140 702 Korea Tel lt 82 gt 2 796 3115 Fax lt 82 gt 2 796 2145 Renesas Technology Malaysia Sdn Bhd Unit 906 Block B Menara Amcorp Amcorp Trade Centre No 18 Jalan Persiaran Barat 46050 Petaling Jaya Selangor Darul Ehsan Malaysia Tel lt 603 gt 7955 9390 Fax lt 603 gt 7955 9510 2005 Renesas Technology Corp All rights reserved Printed in Japan Colophon 3 0
5. lt S G 2 amp 10 8 S 2 1 5 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage Vps V Gate2 to Source Voltage Vase V Noise Figure vs Gate2 to Source Voltage 5 TI Vps 3 5 V 4 f 900MHz m B Li E ig o o 2 2 03 S 1 0 1 2 3 4 5 Gate2 to Source Voltage Vg gt s V Rev 2 00 Aug 10 2005 page 4 of 7 RENESAS 3SK318 S11 Parameter vs Freguency S21 Parameter vs Freguency 90 Scale 1 div 15 8 90 Test Condition Vps 3 5 V Vasa 3 V Test Condition Vps 3 5 V Vasa 3 V Ip 10mA OmA 50 to 1000 MHz 50 MHz step 50 to 1000 MHz 50 MHz step S12 Parameter vs Freguency S22 Parameter vs Frequency 90 Scale 0 002 div o D we gt 8 zj lo Test Condition Vps 3 5 V Vezs 3 V Test Condition Vps 3 5 V Vang 3 V 10mA Ip 10mA 50 to 1000 MHz 50 MHz step 50 to 1000 MHz 50 MHz step p Rev 2 00 Aug 10 2005 page 5 of 7 RENESAS 3SK318 S Parameter Vps 3 5V Vos 3V Ip 10mA Zo 500 Freg 11 21 12 22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 50 1 000 2 8 2 41 176 3 0 00068 89 1 0 999 2 2 100 0 998 5 8 2 41 171 9 0 00176 88 5 0 996 4 5 150 0 997 9 1 2 39 167 6 0 00223 80 7 0 996 6 7 200 0 994 12 2 2 38 163 7 0 00303 76 6 0 994 8 7 250
6. Source Voltage 20 20 TI Vps 3 5V 25V Vps 3 5V 1 8V 20V gt ux 16 2 0V 16 1 6V lt E P 1 o 12 14V 5 S 5 8 15V 5 8 o 12 V Ke za s T o 4 o 4 Veis 1 0 V Vezs 1 0 V 0 1 2 3 4 5 0 1 2 3 4 5 Gate1 to Source Voltage Vg1s V Gate2 to Source Voltage Vers V Forward Transfer Admittance vs Gate1 Voltage Power Gain vs Drain Current 30 25 3 Vps 3 5 V Vees 3V gt 20 9 g Z O 15 E a lt koj 5 O 10 S 3 E o 5 Vps 3 5V J D Vazs 3V f 900 MHz 5 LL 0 0 4 0 8 2 1 6 2 0 0 5 10 15 20 25 Rev 2 00 Aug 10 Gale to Source Voltage Vg1s V 2005 page 3 of 7 ztENESAS Drain Current Ip mA 3SK318 Noise Figure vs Drain Current Power Gain vs Drain to Source Voltage 5 TTT 25 Vps 35V Ve2s 3 V a A f 900 MHz 71 a Z S Z 3 O 15 o 5 T ir 2 10 o 2 2 1 sa 5 Ve2s 3 V lp 10 mA M f 900 Mpi 0 5 10 15 20 25 0 2 4 6 8 10 Drain Current Ip mA Drain to Source Voltage Vps V Noise Figure vs Drain to Source Voltage Power Gain vs Gate2 to Source Voltage 5 TT TI Vezs 3 V Vps 3 5 V Ip 10mA 20 f 900MHz a T f 900 MHz m a ke 3 o 15
7. for the latest product information before purchasing a product listed herein The information described here may contain technical inaccuracies or typographical errors Renesas Technology Corp assumes no responsibility for any damage liability or other loss rising from these inaccuracies or errors Please also pay attention to information published by Renesas Technology Corp by various means including the Renesas Technology Corp Semiconductor home page http www renesas com 4 When using any or all of the information contained in these materials including product data diagrams charts programs and algorithms please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products Renesas Technology Corp assumes no responsibility for any damage liability or other loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake Please contact Renesas Technology Corp or an authorized Renesas Technology Corp product distributor when considering the use of a product contained herein for any specific purposes such as apparatus or systems for transportation vehicular medical aerospace nuclear or undersea repeater use 6 The prior written approval of Renesas Technology Corp is necessary to reprin
8. 0 994 15 1 2 37 159 8 0 00365 79 1 0 991 11 0 300 0 986 18 5 2 35 155 5 0 00414 75 4 0 988 13 2 350 0 978 21 3 2 30 151 4 0 00484 75 0 0 983 15 3 400 0 972 24 1 2 28 147 6 0 00533 78 0 0 980 17 4 450 0 969 27 0 2 26 143 6 0 00588 71 6 0 976 19 6 500 0 954 29 7 2 23 140 0 0 00617 69 5 0 971 21 7 550 0 955 32 8 2 19 135 9 0 00666 71 5 0 966 23 7 600 0 941 35 7 2 17 132 2 0 00672 70 6 0 960 25 6 650 0 932 38 3 2 14 128 6 0 00694 69 0 0 955 27 8 700 0 924 41 3 2 09 125 0 0 00709 71 4 0 948 29 9 750 0 919 44 1 2 07 121 5 0 00689 69 0 0 942 31 8 800 0 905 46 9 2 03 117 9 0 00699 68 9 0 937 33 8 850 0 896 49 2 2 00 114 7 0 00644 74 2 0 930 35 8 900 0 884 52 4 1 96 110 4 0 00633 75 5 0 923 37 6 950 0 880 54 7 1 93 107 1 0 00585 77 8 0 917 39 8 1000 0 866 57 7 1 89 103 8 0 00605 82 1 0 910 41 9 Rev 2 00 Aug 10 2005 page 6 of 7 ztENESAS 3SK318 Package Dimensions
9. nd more reliable but there is always the possibility that trouble may occur with them Trouble with semiconductors may lead to personal injury fire or property damage Remember to give due consideration to safety when making your circuit designs with appropriate measures such as i placement of substitutive auxiliary circuits ii use of nonflammable material or iii prevention against any malfunction or mishap Notes regarding these materials 1 These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp product best suited to the customer s application they do not convey any license under any intellectual property rights or any other rights belonging to Renesas Technology Corp or a third party 2 Renesas Technology Corp assumes no responsibility for any damage or infringement of any third party s rights originating in the use of any product data diagrams charts programs algorithms or circuit application examples contained in these materials 3 All information contained in these materials including product data diagrams charts programs and algorithms represents information on products at the time of publication of these materials and are subject to change by Renesas Technology Corp without notice due to product improvements or other reasons It is therefore recommended that customers contact Renesas Technology Corp or an authorized Renesas Technology Corp product distributor
10. t or reproduce in whole or in part these materials 7 If these products or technologies are subject to the Japanese export control restrictions they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination Any diversion or reexport contrary to the export control laws and regulations of Japan and or the country of destination is prohibited 8 Please contact Renesas Technology Corp for further details on these materials or the products contained therein KENESAS RENESAS SALES OFFICES http www renesas com Refer to http www renesas com en network for the latest and detailed information Renesas Technology America Inc 450 Holger Way San Jose CA 95134 1368 U S A Tel lt 1 gt 408 382 7500 Fax lt 1 gt 408 382 7501 Renesas Technology Europe Limited Dukes Meadow Millboard Road Bourne End Buckinghamshire SL8 5FH U K Tel lt 44 gt 1628 585 100 Fax lt 44 gt 1628 585 900 Renesas Technology Hong Kong Ltd 7th Floor North Tower World Finance Centre Harbour City 1 Canton Road Tsimshatsui Kowloon Hong Kong Tel lt 852 gt 2265 6688 Fax lt 852 gt 2730 6071 Renesas Technology Taiwan Co Ltd 10th Floor No 99 Fushing North Road Taipei Taiwan Tel lt 886 gt 2 2715 2888 Fax lt 886 gt 2 2713 2999 Renesas Technology Shanghai Co Ltd Unit2607 Ruijing Building No 205 Maoming Road S Shanghai 200020 China
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