Philips SA5205A User's Manual
Contents
1. TA 550C TA 25 C 20 TA 85 C TA 125 C Zo 750 Voc 6V 4 2 4 6 8 492 2 4 6 8 59 FREQUENCY MHz SR00230 Figure 13 Input S44 and Output S22 Return Loss vs Frequency 1997 Nov 07 Figure 16 Insertion Gain vs Frequency S21 Philips Semiconductors Wide band high frequency amplifier THEORY OF OPERATION The design is based on the use of multiple feedback loops to provide wide band gain together with good noise figure and terminal impedance matches Referring to the circuit schematic in Figure 17 the gain is set primarily by the equation Vout _ Re Res 1 Vin Rey which is series shunt feedback There is also shunt series feedback due to Reo and Ree which aids in producing wideband terminal impedances without the need for low value input shunting resistors that would degrade the noise figure For optimum noise performance Re and the base resistance of Q4 are kept as low as possible while Rf2 is maximized The noise figure is given by the following equation NF KT ry Rg Ep 10log 1 4 dB 2 Ro where lc4 5 5mA Rg42129 rg21300 KT q 26mV at 25 C and Ro 50 for a 500 system and 75 for a 75Q system The DC input voltage level Vi can be determined by the equation Vin Vge1 lc1 lc3 Rei Product specification SA5205A where Re 129 Vggz0 8V lc4 5mA and Io2. Voltage Figure 7 Saturated Output Power vs Frequency 9 NOISE FIGURE dBm s 1 2 oe Sage 0 of O8 qi FREQUENCY MHz SR00219 E co mwmoo5dgo coct o OUTPUT LEVEL dBm wi 2 4 6 842 2 4 6 8 493 FREQUENCY MHz SR00220 Figure 4 Noise Figure vs Frequency Figure 8 1dB Gain Compression vs Frequency 25 S Vec By 4 35 Vec 7 7V R ce Inr D mo 20 2 30 ui E S ki z z 3 z Vec 6v ul 2 45 l S E Voc 5v 9 20 ul a E I Zo 502 z L TA 25 C H 15 Wu o 10 10 40 2 4 6 8492 2 4 6 8 93 4 5 6 7 8 9 10 FREQUENCY MHz SR00221 POWER SUPPLY VOLTAGE V SR00222 Figure 5 Insertion Gain vs Frequency S21 Figure 9 Second Order Output Intercept vs Supply Voltage 30 E a 1 m K 25 ui z 2 K ui 20 z z m E ui 15 Zo 502 U tt TA 25 C CH o z 10 rI E Ia 2 4 68 2 4 6 849 5 10 10 10 4 5 6 7 8 9 10 FREQUENCY MHz SR00223 POWER SUPPLY VOLTAGE V SR00224 Figure 6 Insertion Gain vs Frequency S2 1997 Nov 07 Figure 10 Third Order Intercept vs Supply Voltage Ph
3. please refer to S Parameter Design HP App Note 154 1972 High Frequency Amplifiers by Ralph S Carson of the University of Missouri Rolla Copyright 1985 published by John Wiley amp Sons Inc THIRD ORDER 2ND ORDER INTERCEPT POINT C INTERCEPT POINT 1dB COMPRESSION POINT a FUNDAMENTAL Ze RESPONSE 5m ei n E 2 o 2ND ORDER RESPONSE 3RD ORDER RESPONSE 60 50 40 30 20 10 0 10 420 430 40 INPUT LEVEL dBm SR00236 Figure 22 1997 Nov 07 11 Philips Semiconductors Product specification Wide band high frequency amplifier SA5205A SO8 plastic small outline package 8 leads body width 3 9mm SOT96 1 2 5 scale DIMENSIONS inch dimensions are derived from the original mm dimensions A UNIT max AM A2 As bp c EQ e HE 0 25 i 4 0 6 2 0 10 1 25 0 36 0 19 j 3 8 5 8 0 0098 0 0 16 0 0075 0 0 15 1 75 inches 0 069 Notes 1 Plastic or metal protrusions of 0 15 mm maximum per side are not included 2 Plastic or metal protrusions of 0 25 mm maximum per side are not included OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION SOT96 1 076E03S MS 012AA E 09 02 04 ISSUE DATE 1997 Nov 07 12 Philips Semiconductors Product specification Wide band high frequency amplifier SA5205A DEFINITIONS Data Sheet Identi
4. 0 RE2 12 RE1 12 lt E o RF2 AWW SR00231 Figure 17 Schematic Diagram 1997 Nov 07 Philips Semiconductors Wide band high frequency amplifier POWER DISSIPATION CONSIDERATIONS When using the part at elevated temperature the engineer should con sider the power dissipation capabilities At the nominal supply voltage of 6V the typical supply current is 25mA 32mA Max For operation at supply voltages other than 6V see Figure 3 for Icc versus Voc curves The supply current is inversely proportional to temperature and varies no more than 1mA between 25 C and either temperature extreme The change is 0 1 per over the range The recommended operating temperature ranges are air mount specifications Better heat sinking benefits can be realized by mounting the D package body against the PC board plane PC BOARD MOUNTING In order to realize satisfactory mounting of the SA5205A to a PC board certain techniques need to be utilized The board must be double sided with copper and all pins must be soldered to their respective areas i e all GND and Vcc pins on the SO package The power supply should be decoupled with a capacitor as close to the Vcc pins as possible and an RF choke should be inserted between the supply and the device Caution should be exercised in the connection of input and output pins Standard microstrip should be observed wherever possible There should be no solder bumps or burrs or any obstru
5. 15 Figure 1 Pin Configuration FEATURES 600MHz bandwidth 20dB insertion gain 4 8dB 6dB noise figure ZO 75Q ZO 50Q 9 No external components required Input and output impedances matched to 50 750 systems 2000V ESD protection APPLICATIONS 9 75Q cable TV decoder boxes 9 Antenna amplifiers Amplified splitters Signal generators Frequency counters Oscilloscopes Signal analyzers Broad band LANs 9 Fiber optics Modems Mobile radio 9 Security systems Telecommunications TEMPERATURE RANGE ORDER CODE DWG 40 to 85 C SA5205AD SOT96 1 853 1598 18662 Philips Semiconductors Product specification Wide band high frequency amplifier SA5205A EQUIVALENT SCHEMATIC Vcc i Z R1 R2 as k NNN O VOUT e L o R3 VIN e o o ne RF1 Lt Figure 2 Equivalent Schematic ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT Suppl voltage CL AC input voltage Ta Operating ambient temperature range UNE ERN le Maximum power dissipation LL S TA 25 C still air 2 D package 780 mW 1 Derate above 25 C at the following rates D package at 6 2mW C 2 See Power Dissipation Considerations section NOTES 1997 Nov 07 3 Philips Semiconductors Product specification Wide band high frequency amplifier SA5205A DC ELECTRICAL CHARACTERISTICS Vec 6V Zs Z Zo9 50Q and TA 25 C in all package
6. 3 7mA currents rated at Vcc 6V Under the above conditions Vum is approximately equal to 1V Level shifting is achieved by emitter follower Q3 and diode Q4 which provide shunt feedback to the emitter of Q4 via Rp4 The use of an emitter follower buffer in this feedback loop essentially eliminates problems of shunt feedback loading on the output The value of Rf1 1402 is chosen to give the desired nominal gain The DC output voltage Vout can be determined by Vour Voc Ic2 lce R2 4 where Vcc 6V R222259 1c228mA and lcg 5mA From here it can be seen that the output voltage is approximately 3 1V to give relatively equal positive and negative output swings Diode Qs is included for bias purposes to allow direct coupling of Ree to the base of Q4 The dual feedback loops stabilize the DC operating point of the amplifier The output stage is a Darlington pair Oe and Q2 which increases the DC bias voltage on the input stage Q4 to a more desirable value and also increases the feedback loop gain Resistor Ro optimizes the output VSWR Voltage Standing Wave Ratio Inductors Ly and Lo are bondwire and lead inductances which are roughly 3nH These improve the high frequency impedance matches at input and output by partially resonating with 0 5pF of pad and package capacitance Vcc o Z R1 R2 Z ko L2 650 225 os o Mo Vout 10 3nH Q2 VIN L2 o fYYY re Q1 Q4 3nH R3 140 RF1 e mwm 14
7. INTEGRATED CIRCUITS DATA SAHEET SA5205A Wide band high frequency amplifier Product specification Replaces data of February 24 1992 IC17 Data Handbook 1997 Nov 07 Philips Semiconductors PHILIPS Philips Semiconductors Product specification Wide band high frequency amplifier SA5205A DESCRIPTION The SA5205A family of wideband amplifiers replace the SA5205 family The A parts are fabricated on a rugged 2um bipolar process featuring excellent statistical process control Electrical performance is nominally identical to the original parts The SA5205A is a high frequency amplifier with a fixed insertion gain of 20dB The SA5205A operates with a single supply of 6V and only draws 24mA of supply current which is much less than comparable hybrid parts The noise figure is 4 8dB in a 75Q system and 6dB in a 50Q system Until now most RF or high frequency designers had to settle for discrete or hybrid solutions to their amplification problems Most of these solutions required trade offs that the designer had to accept in order to use high frequency gain stages These include high power consumption large component count transformers large packages with heat sinks and high part cost The SA5205A solves these problems by incorporating a wide band amplifier on a single monolithic chip The part is well matched to 50 or 75Q input and output impedances The Standing Wave Ratios in 50 and 75Q systems do not exc
8. MHz a Insertion Gain vs Frequency S21 b Insertion Gain vs Frequency S21 10 10 15 m 15 Zo 752 m T TA 25 C Voc DN Vcc EN E 20 E 3 2 S o 2 a 25 30 30 ai 2 4 68492 2 4 6 8493 10301 2 4 6 84922 2 4 6 84593 FREQUENCY MHz FREQUENCY MHz c Isolation vs Frequency S42 d S42 Isolation vs Frequency a 40 a a m 35 3J 35 d d 2S so a8 30 Ek oa as iz OUTPUT Za za 25 S2 25 E Ek eG We E tt TE 20 GE 20 m 2 5g ae SE z5 Voc EN 29 15 O 15 Zo 750 TA 25 C 10 10 L L ai 2 4 6 8 2 2 4 6 8 9 10 2 4 68 49 2 4 B 8 493 FREQUENCY MHz FREQUENCY MHz e Input S41 and Output S22 Return Loss f Input S41 and Output S25 Return Loss vs Fr n vs Frequency s Frequency Figure 20 1997 Nov 07 9 Philips Semiconductors Wide band high frequency amplifier The most important parameter is S2 It is defined as the square root of the power gain and in decibels is equal to voltage gain as shown below Zp Z n ZoutT for the SA5205A VN Vout Pin Zp Zp Pour Pin Pi V 2 P Insertion Power Gain Vi Insertion Voltage Gain Measured value for the SA5205A S2 2 100 P OUT oP P Soy 100 IN V and V e JP Sa 10 In decibels Pigg 10 Log S24 20dB Vid 20 Log S21 20dB Pyap Vi dB S21 aB 20dB Also measured on the same system are the respective voltage standing wave ratios These are shown in Figure 21 The VSWR can be seen to be below 1 5 acros
9. are for illustrative purposes only Philips Semiconductors makes no representation or warranty that such applications will be suitable forthe specified use without furthertesting or modification LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances devices or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale Philips Semiconductors Copyright Philips Electronics North America Corporation 1997 811 East Arques Avenue All rights reserved Printed in U S A P O Box 3409 Sunnyvale California 94088 3409 Telephone 800 234 7381 Lett make things beter Bees amp PHILIPS
10. ctions in the signal path to cause launching problems The path should be as straight as possible and lead lengths as short as possible from the part to the cable connection Another important consideration is that the input and output should be AC coupled This is because at Voc 6V the input is approximately at 1V while the output is at 3 1V The output must be decoupled into a low impedance system or the DC bias on the output of the amplifier will be loaded down causing loss of output power The easiest way to decouple the entire amplifier is by soldering a high frequency chip capacitor directly to the input and Product specification SA5205A output pins of the device This circuit is shown in Figure 18 Follow these recommendations to get the best frequency response and noise immunity The board design is as important as the integrated circuit design itself SCATTERING PARAMETERS The primary specifications for the SA5205A are listed as S parameters S parameters are measurements of incident and reflected currents and voltages between the source amplifier and load as well as transmission losses The parameters for a two port network are defined in Figure 19 Actual S parameter measurements using an HP network analyzer model 8505A and an HP S parameter tester models 8503A B are shown in Figure 20 Values for the figures below are measured and specified in the data sheet to ease adaptation and comparison of the SA5205A to other hig
11. eed 1 5 on either the input or output from DC to the 3dB bandwidth limit Since the part is a small monolithic IC die problems such as stray capacitance are minimized The die size is small enough to fit into a very cost effective 8 pin small outline SO package to further reduce parasitic effects No external components are needed other than AC coupling capacitors because the SA52054 is internally compensated and matched to 50 and 759 The amplifier has very good distortion specifications with second and third order intermodulation intercepts of 24dBm and 17dBm respectively at 100MHz The device is ideally suited for 75Q cable television applications such as decoder boxes satellite receiver decoders and front end amplifiers for TV receivers It is also useful for amplified splitters and antenna amplifiers The part is matched well for 50Q test equipment such as signal generators oscilloscopes frequency counters and all kinds of signal analyzers Other applications at 50Q include mobile radio CB radio and data video transmission in fiber optics as well as broad band LANs and telecom systems A gain greater than 20dB can be achieved by cascading additional SA5205As in series as required without any degradation in amplifier stability ORDERING INFORMATION DESCRIPTION 8 Pin Plastic Small Outline SO package 1997 Nov 07 PIN CONFIGURATIONS D Packages vec vec VIN VOUT GND GND GND GND TOP VIEW SR002
12. fication Product Status Definition This data sheet contains the design target or goal specifications for product development Specifications Objective Specification Formative or in Design 4 may change in any manner without notice This data sheet contains preliminary data and supplementary data will be published at a later date Philips Preliminary Specification Preproduction Product Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product This data sheet contains Final Specifications Philips Semiconductors reserves the right to make changes Product Specification Ful Production at any time without notice in order to improve design and supply the best possible product Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes without notice in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no license or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Applications that are described herein for any of these products
13. h frequency amplifiers Vcc G 2 RF CHOKE TL DECOUPLING L CAPACITOR vin 0 1 gt Vout AC AC COUPLING COUPLING CAPACITOR CAPACITOR E SR00232 Figure 18 Circuit Schematic for Coupling and Power Supply Decoupling POWER REFLECTED FROM INPUT PORT S41 INPUT RETURN LOSS S4 POWER AVAILABLE FROM 5 GENERATOR AT INPUT PORT 21 gt N REVERSE TRANSDUCER S42 REVERSE TRANSMISSION LOSS S12 POWER GAIN OSOLATION S11 S22 S24 FORWARD TRANSMISSION LOSS S21 N TRANSDUCER POWER GAIN OR INSERTION GAIN q POWER REFLECTED 12 FROM OUTPUT PORT S22 OUTPUT RETURN LOSS Soo POWER AVAILABLE FROM GENERATOR AT OUTPUT PORT a Two Port Network Defined b SR00233 Figure 19 1997 Nov 07 8 Philips Semiconductors Wide band high frequency amplifier Product specification SA5205A 509 System 75Q System 25 25 Vec 8v Vec TV a o m 20 T Z z S E Vec 6v z E S X 15 vec 5V ti 2 2 Zo 752 TA 25 C 10 m 1 2 4 6 8492 2 4 6 ai 2 4 6 8492 2 4 6 8 493 Ne 10 d FREQUENCY MHz FREQUENCY
14. ilips Semiconductors Wide band high frequency amplifier Product specification SA5205A 2 0 1 9 1 8 12 7 1 6 1 5 14 1 3 Zo 2750 TA 25 C Voc 6 lt INPUT VSWR 1 2 Zo 502 1 1 9 1 0 101 2 4 6 810 2 4 6 8103 FREQUENCY MHz SR00225 ISOLATION dB Voc 6V iol 2 4 s ng 2 4 6 8493 FREQUENCY MHz SR00226 Figure 11 Input VSWR vs Frequency Figure 14 Isolation vs Frequency S12 2 0 1 9 1 8 1 7 1 6 1 5 1 4 Tamb 25 C Voc BV INPUT VSWR 13 79 750 1 2 11 Zo 502 1 0 101 2 4 6 8102 2 4 6 8103 FREQUENCY MHz SR00227 ISOLATION GAIN dB 25 T T Vec 8v Vec zs TV 20 Vec 6v 15 Vec 5v ai 2 4 6842 2 4 6 8 59 FREQUENCY MHz SR00228 Figure 12 Output VSWR vs Frequency Figure 15 Insertion Gain vs Frequency S21 40 35 30 OUTPUT INPUT RETURN LOSS dB OUTPUT RETURN LOSS dB nN ou fol 2 4 68 2 2 4 6 8 493 FREQUENCY MHz SR00229 INSERTION GAIN dB 25
15. nt frequencies The upper line shows the fundamental output plotted against itself with a 1dB to 1dB slope The second and third order products lie below the fundamentals and exhibit a 2 1 and 3 1 slope respectively The intercept point for either product is the intersection of the extensions of the product curve with the fundamental output The intercept point is determined by measuring the intermodulation ratio at a single output level and projecting along the appropriate product slope to the point of intersection with the fundamental When the intercept point is known the intermodulation ratio can be determined by the reverse process The second order IMR is equal to the difference between the second order intercept and the fundamental output level The third order IMR is equal to twice the difference between the third order intercept and the fundamental output level These are expressed as IP gt Poyt IMRo IP3 Pouyr IMR32 where Pout is the power level in dBm of each of a pair of equal level fundamental output signals IP and IP3 are the second and third order output intercepts in dBm and IMR2 and IMRs are the second and third order intermodulation ratios in dB The intermodulation intercept is an indicator of intermodulation performance only in the small signal operating range of the amplifier Above some output level which is below the 1dB compression point the active device moves into large signal operation At this point the inte
16. rmodulation products no longer follow the straight line output slopes and the intercept description is no longer valid It is therefore important to measure IP and IPs at output levels well below 1dB compression One must be careful however not to select too low levels because the test equipment may not be able to recover the signal from the noise For the SA5205A we have chosen an output level of 10 5dBm with fundamental frequencies of 100 000 and 100 01MHz respectively Philips Semiconductors Product specification Wide band high frequency amplifier SA5205A 2 0 2 0 1 9 1 9 8 Tas 25 C Mid pes Ke SCH Tamb 25 C i7 OCS lit Vec 6V E 16 A 1 6 e z gt S 15 5 15 E a z 1 4 5 1 4 z P Z 13 Zo 752 13 252750 1 2 1 2 nl 70 52 1 1 Zo 500 1 0 1 0 101 2 4 6 842 2 4 6 84 93 101 2 4 6 8 42 2 4 6 8493 FREQUENCY MHz FREQUENCY MHz a Input VSWR vs Frequency b Output VSWR vs Frequency SR00235 Figure 21 Input Output VSWR vs Frequency ADDITIONAL READING ON SCATTERING S Parameter Techniques for Faster More Accurate Network Design PARAMETERS HP App Note 95 1 Richard W Anderson 1967 HP Journal For more information regarding S parameters
17. s unless otherwise specified SYMBOL PARAMETER TEST CONDITIONS A Operating supply voltage range Over temperature E SpE 20 25 32 mA Uppy cume Over temperature 19 25 33 mA Insertion gain f 100MHz 17 19 21 Over temperature 16 5 21 5 f 100MHz 25 LL L DG e LE Mem ec em e cma np pCa O Jas S y EE Bawen 99 s ve us sei 9 3 Lows DECHE 8 9 Noise foure soar we E59 T saturated outptponer owns 9 Free gain compression oome 49 8 Third order intermodulation f 100MHz 447 dBm intercept output Second order intermodulation f 100MHz 424 dBm intercept output 1997 Nov 07 4 Philips Semiconductors Wide band high frequency amplifier Product specification SA5205A 35 34 32 30 28 26 24 22 20 18 16 TA 25 C SUPPLY CURRENT mA 5 5 5 6 6 5 7 7 5 8 SUPPLY VOLTAGE V SR00217 11 10 9 8 e 7 6 4 l a aL Voc 7V G 2L Vcc 6V zu Lk Z E o0 Vec 5V Voc 8V 5 a 1 3 3 f Zo 502 5 TA 25 C 6 w1 2 A 6 8 9 2 4 6 8403 FREQUENCY MHz SR00218 Figure 3 Supply Current vs Supply
18. s the entire operational frequency range Relationships exist between the input and output return losses and the voltage standing wave ratios These relationships are as follows INPUT RETURN LOSS S dB S44dB 20 Log S4 OUTPUT RETURN LOSS S220B SoodB 20 Log Soo INPUT VSWR s1 5 OUTPUT VSWR s1 5 1dB GAIN COMPRESSION AND SATURATED OUTPUT POWER The 1dB gain compression is a measurement of the output power level where the small signal insertion gain magnitude decreases 1997 Nov 07 10 Product specification SA5205A 1dB from its low power value The decrease is due to nonlinearities in the amplifier an indication of the point of transition between small signal operation and the large signal mode The saturated output power is a measure of the amplifier s ability to deliver power into an external load It is the value of the amplifier s output power when the input is heavily overdriven This includes the sum of the power in all harmonics INTERMODULATION INTERCEPT TESTS The intermodulation intercept is an expression of the low level linearity of the amplifier The intermodulation ratio is the difference in dB between the fundamental output signal level and the generated distortion product level The relationship between intercept and intermodulation ratio is illustrated in Figure 22 which shows product output levels plotted versus the level of the fundamental output for two equal strength output signals at differe
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