Philips BGA6589 User's Manual
Contents
1. DATA SHEET STATUS PRODUCT STATUS 2 3 Development DEFINITION Objective data This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Relevant changes will be communicated via a Customer Product Process Change Notification Product data Production CPCN Notes 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com 3 For data sheets describing multiple type numbers the highest level product status determines the data sheet status DEFINITIONS Short form specification The data in a short form specification is extract2. 1 95 GHz CAUTION This product is supplied in anti static packing to prevent damage caused by electrostatic discharge during transport and handling For further information refer to Philips specs SNW EQ 608 SNW FQ 302A and SNW FQ 302B 2003 Sep 19 2 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vs DC device voltage RF input AC coupled _ 6 V DC supply current _ 150 mA total power dissipation Ts lt 70 C note 1 _ 800 mW storage temperature 65 150 C Tj operating junction temperature 150 C na ot ha Note 1 Tsis the temperature at the soldering point of pin 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j s thermal resistance from junction to solder point Ts lt 70 C note 1 100 K W Note 1 Tsis the temperature at the soldering point of pin 2 STATIC CHARACTERISTICS Tj 25 C Vs 9 V Rbias 51 Q unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT 73 81 89 mA Is supply current 2003 Sep 19 3 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 CHARACTERISTICS Vs 9 V ls 84 MA Tamb 25 C IP3 out tone spacing 1 MHz PI 0 dBm per tone see Fig 2 Rbias 51 Q Z Zs 50 Q
3. DISCRETE SEMICONDUCTORS DATA SHEET T BGA6589 MMIC wideband medium power amplifier Product specification 2003 Sep 19 Philips PHILIPS Semiconductors DH l LI P Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 FEATURES PINNING e Broadband 50 Q gain block e 20 dBm output power e SOT89 package e Single supply voltage needed APPLICATIONS e Broadband medium power gain blocks Small signal high linearity amplifiers Variable gain and high output power in combination with the BGA2031 Cellular PCS and CDPD IF RF buffer amplifier We 92 S MaX418 Bottom view Wireless data SONET Oscillator amplifier final PA Marking code 5A Drivers for CATV amplifier Fig 1 Simplified outline SOT89 and symbol DESCRIPTION Silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 4 pin SOT89 plastic low thermal resistance SMD package The BGA6x89 series of medium power gain blocks are resistive feedback Darlington configured amplifiers Resistive feedback provides large bandwidth with high accuracy QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP UNIT DC supply voltage Is 84 mA 4 8 V DC supply current Vs 9 V Rbias 51 Q Tj 25 C s 24 2 insertion power gain f 1 95 GHz noise figure f 1 95 GHz load power at 1 dB compression f 850 MHz f
4. Ig mA 90 80 70 60 40 20 0 20 40 60 80 Tj C Vs 8V Rbias 51 Q Fig 11 Supply current as a function of operating junction temperature typical values 2003 Sep 19 8 64 des 002 Scattering parameters ls 83 mA Vs 8 V Pp 30 dBm Zo 50 Q Tamb 25 C S11 S21 S12 S22 f MHz MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE K FACTOR ratio deg ratio deg ratio deg ratio deg 200 0 30 6 87 16 61 161 86 0 04 2 38 0 34 20 03 1 0 300 0 31 10 91 16 18 153 02 0 04 3 66 0 34 30 50 1 0 400 0 32 15 72 15 59 144 39 0 04 40 74 1 1 500 0 33 21 0 14 91 136 01 0 04 6 75 0 34 50 56 1 1 600 0 33 26 44 14 19 128 12 0 04 60 07 1 1 700 0 34 32 08 13 51 120 88 0 04 10 94 0 33 69 21 1 1 800 0 34 37 75 12 77 114 19 0 04 77 91 1 1 900 0 35 43 18 11 88 107 40 0 04 15 15 0 32 86 13 1 1 1000 0 35 48 9 11 22 101 34 0 04 94 01 1 1 1100 0 35 54 2 10 64 95 86 0 04 19 93 0 31 101 7 1 1 1200 0 35 59 55 10 0 90 82 0 05 109 1 1 1 1300 0 34 64 78 9 39 85 46 0 05 24 10 0 30 116 4 1 1 1400 0 34 69 93 8 93 80 15 0 05 123 6 1 1 1500 0 33 74 81 8 54 75 95 0 05 25 98 0 28 130 9 1 1 1600 0 33 79 82 8 07 72 26 0 05 138 2 1 1 1700 0 32 84 88 7 60 67 95 0 06 28 69 0 26 145 7 1 1 1800 0 31 89 81 7 32 63 43 0 06 153 6 1 1 1900 0 30 94 89 7 08 59 81 0 06 28 44 0 24 162 0 1 1 2000 0 2
5. The Netherlands R77 01 pp12 Date of release 2003 Sep 19 Document order number 9397 750 11765 Let make things bel i eee amp PHILIPS
6. unless otherwise specified SYMBOL PARAMETER CONDITIONS insertion power gain f 850 MHz f 1 95 GHz f 2 5 GHz return losses input f 850 MHz f 1 95 GHz f 2 5 GHz return losses output f 850 MHz f 1 95 GHz f 2 5 GHz noise figure f 850 MHz f 1 95 GHz f 2 5 GHz stability factor f 850 MHz f 2 5 GHz load power at 1 dB gain compression f 850 MHz at 1 dB gain compression f 1 95 GHz input intercept point f 850 MHz f 2 5 GHz output intercept point f 850 MHz f 2 5 GHz 2003 Sep 19 4 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA6589 MMIC The device is internally matched to 50 Q and therefore does not require any external matching The value of the input and output DC blocking capacitors C1 and C2 depends on the operating frequency see the tables below Capacitors C1 and C2 are used in conjunction with L1 and C3 to fine tune the input and output impedance For optimum supply decoupling a 1 uF capacitor C5 can be added The external components should be placed as close as possible to the MMIC When using via holes use multiple via holes per pin in order to limit ground path induction Resistor R1 is a bias resistor providing DC current stability with temperature R12 Vs T T C4 T c50 50 Q Vp C2 microstrip 50
7. 9 100 3 6 74 56 09 0 07 170 7 1 1 2100 0 28 105 9 6 46 51 84 0 07 29 17 0 23 179 99 1 1 2200 0 26 111 8 6 28 48 02 0 07 170 17 1 2 2300 0 25 118 0 6 07 45 0 0 08 28 37 0 22 160 16 1 2 2400 0 24 125 2 5 78 41 33 0 08 149 59 1 1 2500 0 22 132 8 5 61 36 72 0 08 26 46 0 23 139 39 1 2 2600 0 21 141 3 5 51 33 15 0 09 129 67 1 0 2700 0 21 153 3 5 33 30 04 0 09 24 72 0 28 120 55 1 2 2800 0 07 127 7 6 44 28 98 0 12 80 88 1 2 2900 0 19 167 20 4 88 19 14 0 10 20 48 0 27 105 15 1 2 3000 0 18 178 11 4 78 16 89 0 10 96 35 12 3100 0 18 165 13 4 57 16 56 0 11 18 98 0 32 89 48 1 0 J lJi duie amod wnipew puegepim JININ 68S9V9d SJOJONPUODIWS sdijiuq uolyeayioeds yonpold Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 PACKAGE OUTLINE Plastic surface mounted package collector pad for good heat transfer 3 leads SOT89 2 l ni ly b2 gt e 0 2 Litviurtiriitirisy scale DIMENSIONS mm are the original dimensions UNIT A by bg bg c 1 6 1 8 mm a 1 4 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT89 TO 243 SC 62 shi A ISSUE DATE 2003 Sep 19 10 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 DATA SHEET STATUS
8. Q microstrip C1 oo 3 MGX419 1 Optional capacitor for optimum supply decoupling 2 R1 values at operating supply voltage Vs 6 V R1 15 9 Vs 9 V R1 51 Q Vs 11 5 V R1 82 9 Fig 2 Typical application circuit Table1 Component descriptions see Fig 2 VALUE AT OPERATING FREQUENCY COMPONENT DESCRIPTION DIMENSIONS C1 C2 multilayer ceramic chip capacitor 0603 C3 multilayer ceramic chip capacitor 0603 1 nF 1 nF C5 optional electrolytic or tantalum capacitor 0603 1 uF 1 uF R1 SMD resistor 0 5 W Vs 9 V _ p 2003 Sep 19 5 Philips Semiconductors MMIC wideband medium power amplifier Product specification BGA6589 MGX410 Is 84 mA Vs 9V Pp 30 dBm Zo 50 Q Fig 4 Output reflection coefficient S22 typical values 1 0 0 8 0 6 0 4 A ta 55510 N 0 0 A i 1 0 MGX409 Is 84 MA Vs 9 V Pp 30 dBm Zo 50 Q Fig 3 Input reflection coefficient s41 typical values 1 0 0 8 0 6 0 4 0 2 0 1 0 2003 Sep 19 6 Philips Semiconductors MMIC wideband medium power amplifier MGX411 s421 dB 20 30 40 0 500 1000 1500 2000 2500 f MHz Is 84 mA Vs 9V Pp 30 dBm Zo 50 Q Fig 5 Isolation s42 as a function of frequency typical values Product specifica
9. ed from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2003 Sep 19 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes in the products inc
10. luding circuits standard cells and or software described or contained herein in order to improve design and or performance When the product is in full production status Production relevant changes will be communicated via a Customer Product Process Change Notification CPCN Philips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2003 SCA75 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in
11. tion BGA6589 MGX412 25 so4 dB 20 15 10 5 0 0 500 1000 1500 2000 2500 f MHz Is 84 mA Vs 9V Pp 30 dBm Zo 50 Q Fig 6 Insertion gain S21 2 as a function of frequency typical values MGX413 25 PL1dB dBm 20 r 15 10 5 0 0 500 1000 1500 2000 2500 f MHz Is 84 mA Vs 9 V Zo 50 Q Fig 7 Load power as a function of frequency typical values MGX414 40 IP3 out dBm s h 30 20 10 0 0 500 1000 1500 2000 2500 f MHz Is 84 mA Vs 9 V PL 0 dBm Zo 50 Q Fig 8 Output intercept as a function of frequency typical values 2003 Sep 19 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 MGX415 MGX416 5 5 NF dB 4 4 3 o 3 2 2 1 1 0 0 0 500 1000 1500 2000 2500 0 500 1000 1500 2000 2500 f MHz f MHz Is 84 MA Vs 9 V Zo 50 Q Is 84 mA Vs 9 V Zo 50 Q Fig 9 Noise figure as a function of frequency Fig 10 Stability factor as a function of frequency typical values typical values MGX417 100
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