NXP Semiconductors PIP3107-D User's Manual
Contents
1. ET SOURCE Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3107 D LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System IEC 134 smo panaweren ____ eowomons an ma T UNT Continuous drain source voltage Continuous drain current Vis 5 V Trp 25 C Continuous drain current Vis 5 Vi Trp lt 125 C Continuous input current Non repetitive peak input current t lt 1ms Total power dissipation Tmo lt 25 C Storage temperature Continuous junction temperature normal operation Case temperature during soldering ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MN M Ve Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 KQ OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients svmeo Parameter Jeonomons mm max UNIT Inductive load turn off lom 16 A Vpp lt 20 V Non repetitive clamping energy Tmo lt 25 C 200 mJ Repetitive clamping energy Tmo lt 95 C f 250 Hz 32 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin TOPFET can protect itself from two types of overload overtemperature and short circuit load SYMBOL PARAMETER REQUIRED CONDITION MIN MAX UNIT Drain source voltage 4V lt Vis lt 5 5 V ofaj v THERMAL CHARACTERISTICS s2. Philips Semiconductors Product specification Logic level TOPFET PIP3107 D DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package APPLICATIONS General purpose switch for driving e lamps e motors e solenoids e heaters FEATURES TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input e Low operating input current permits direct drive by micro controller e ESD protection on all pins e Overvoltage clamping for turn off of inductive loads PINNING SOT428 DESCRIPTION input drain source drain October 2001 QUICK REFERENCE DATA SYMBOL PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain source on state resistance Input supply current Visp 5OV FUNCTIONAL BLOCK DIAGRAM LOGIC AND PROTECTION PIN CONFIGURATION Fig 1 SYMBOL Elements of the TOPFET Fi TOPFET_ J POWER MOSF
3. cropped SOT428 seating plane lt L A Ap lt AY e mounting base DIMENSIONS mm are the original dimensions A by O A UNIT Ay 2 b eR max 2 38 0 65 0 89 0 89 1 1 2 22 0 45 0 71 0 71 0 9 b2 mm Note 1 Measured from heatsink back to lead OUTLINE REFERENCES EUROPEAN VERSION IEC JEDEC EIAJ PROJECTION SOT428 E 98 04 07 ISSUE DATE Fig 2 SOT428 surface mounting package centre pin connected to mounting base 1 Epoxy meets UL94 VO at 1 8 Net mass 1 1 g For soldering guidelines and SMD footprint design please refer to Data Handbook SC18 October 2001 5 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3107 D DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a
4. ertemperature protection Tiro Threshold junction temperature 1 Trip time t4 s varies with overload dissipation P according to the formula taso Toso In Pp Poqo l 2 This is independent of the dV dt of input voltage Vis October 2001 3 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3107 D INPUT CHARACTERISTICS The supply for the logic and overload protection is taken from the input Limits are for 40 C lt Tm lt 150 C typicals are for Tms 25 C unless otherwise specified fs panaweren Joonomons mn rve wa on Input threshold voltage Vos 5 Vi b 1 mA Input supply current normal operation Input supply current protection latched Protection reset voltage reset time t gt 100 us Latch reset time Vist 5 V Vigo lt 1 V Input clamping voltage 1 5 mA Input series resistance to gate of power MOSFET SWITCHING CHARACTERISTICS Tm 25 C Vbo 13 V resistive load R 4 Q Refer to waveform figure and test circuit svmpor PARAMETER conomons MIN TP max UNIT fefoje m eC P fs Po us 1 The input voltage below which the overload protection circuits will be reset 2 Not directly measureable from device terminals October 2001 4 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3107 D MECHANICAL DATA Plastic single ended surface mounted package Philips version of D PAK 3 leads one lead
5. later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for a
6. ny consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1 Please consult the most recently issued datasheet before initiating or completing a design 2 The product status of the device s described in this datasheet may have changed since this datasheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com October 2001 6 Rev 1 000
7. rweor paramere Jconomons J WN TWP max unr Thermal resistance Rin j mb Junction to mounting base 1 75 1 92 K W Rin j a Junction to ambient minimum footprint FR4 PCB 70 K W 1 Prior to the onset of overvoltage clamping For voltages above this value safe operation is limited by the overvoltage clamping energy 2 A higher T is allowed as an overload condition but at the threshold T 7o the over temperature trip operates to protect the switch 3 All control logic and protection functions are disabled during conduction of the source drain diode October 2001 2 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3107 D OUTPUT CHARACTERISTICS Limits are for 40 C lt Tm lt 150 C typicals are for T 25 C unless otherwise specified Off state Vis OV Vicuypss Drain source clamping voltage lb 10 mA loss Drain source leakage current Vos 40 V Tb 25 C On state lbm 6 A t lt 300 us 6 lt 0 01 Roson Drain source resistance Vis 2 4 4 V Tinb 25 C Vis24V Tmo 25 C OVERLOAD CHARACTERISTICS 40 C lt Tm lt 150 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Short circuit load Vos 13 V Drain current limiting Vig 5 V Tmo 25 C 44V lt V lt 5 5V 4V lt Vies 5 5V Overload protection Vis 5 V T m 25 C Poro Overload power threshold device trips if Pp gt Poco Tisee Characteristic time which determines trip time Ov
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