Kingston Technology ValueRAM 24GB 1600MHz DDR3L
Contents
1. ial with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 30 00mm double sided component Continued gt gt kingston com Document No VALUERAM1396 001 A00 01 08 14 Page1 continued ValueRAM MODULE DIMENSIONS units millimeters D 9 o co im ve oo 22 E N Cu a a n e eS DI oro 30 00 ii ria 29 60x4 24 80x2 21 80x2 mK 18 80x2 15 80x2 J a R 0 65 MAX TYPICAL 11 00x2 L 8 00x2 3 80 Loa i 0 000 x 1 50 47 gt 0 10 elle CHAMFER 0 50 X 45 DEG 4 PLAC DOO D LO LO m eo oS M kingston com Document No VALUERAM1396 001 A00 Page 22. kingston ime Cann ORL O GY Memory Module Specifications Value i KVR16LR11S4K3 241 24GB 8GB 1G x 72 Bit x 3 pcs PC3L 12800 CL11 Registered w Parity 240 Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR16LR11S4K3 241 is a kit of three 1G x 72 bit CL IDD 11 cycles 8GB DDR8L 1600 CL11 SDRAM Synchronous DRAM low Row Cycle Time tRCmin 48 125ns min voltage registered w parity 1Rx4 ECC Intel Compatibility Barack io Acive Mefresh 260ns min Tested memory modules based on eighteen 1G x 4 bit FBGA Command Time tRFCmin components per module Total kit capacity is 24GB The SPDs Row Active Time tRASmin 35ns min are programmed to JEDEC standard latency DDR3 1600 timing Maximum Operating Power 1 35V 4 311 W of 11 11 11 at 1 35V or 1 5V Each 240 pin DIMM uses gold Per module contact fingers The electrical and mechanical specifications UL Rating 94V 0 are as follows Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C FEATURES Power will vary depending on the SDRAM and e JEDEC standard 1 35V 1 28V 1 45V and 1 5V 1 425V Register PLL used 1 575V Power Supply e VDDQ 1 35V 1 28V 1 45V and 1 5V 1 425V 1 575V e 800MHz fCK for 1600Mb sec pin e 8 independent internal bank e Programmable CAS Latency 11 10 9 8 7 6 Programmable Additive Latency 0 CL 2 or CL 1 clock e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequent
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