Fixapart TIP147-MBR
Contents
1. SGS THOMSON TIP140 141 142 ky MICROELECTRONICS TIP145 146 147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TIP141 TIP142 TIP145 AND TIP147 ARE SGS THOMSON PREFERRED SALESTYPES a COMPLEMENTARY PNP NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP140 TIP141 and TIP142 are silicon epitaxial base NPN power transistors in monolithic Darlington configuration and are mounted in TO 218 plastic package They are intented for use in power linear and switching applications The complementary PNP types are TIP145 TIP146 and TIP147 respectively ABSOLUTE MAXIMUM RATINGS INTERNAL SCHEMATIC DIAGRAM SC07840 5CO7850 Ri Typ 5 KQ R2 Typ 150 Q Symbol Parameter Value Unit NPN TIP140 TIP141 TIP142 PNP TIP145 TIP146 TIP147 Vcso Collector Base Voltage le 0 60 80 100 V Vceo Collector Emitter Voltage IB 0 60 80 100 V Vegso Emitter Base Voltage Ic 0 5 V Ic Collector Current 10 A lem Collector Peak Current 20 A Ig Base Current 0 5 A Ptot Total Dissipation at Tcase lt 25 C 125 Ww Tstg Storage Temperature 65 to 150 C Tj Max Operating Junction Temperature 150 C For PNP types voltage and current values ar2. 4 Information furnished is believed to be accurate and reliable However SGS THOMSON Microelectronics assumes no responsabilitv for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is granted bv implication or otherwise under anv patent or patent rights of SGS THOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS THOMSON Microelectronics products are not authorized for use as critical components in life support devices or svstems without express written approval of SGS THOMSON Microelectonics 1997 SGS THOMSON Microelectronics Printed in Italy All Rights Reserved SGS THOMSON Microelectronics GROUP OF COMPANIES Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U S A kay SGS THOMSON II McroeLECTRONICS
3. e negative June 1997 1 4 TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 THERMAL DATA Rthj case Thermal Resistance Junction case Max 1 C W ELECTRICAL CHARACTERISTICS Tcase 25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit leBo Collector Cut off for TIP140 145 VcB 60 V 1 mA Current le 0 for TIP141 146 Vcs 80 V 1 mA for TIP142 147 Vcs 100 V 1 mA ICEO Collector Cut off for TIP140 145 Vce 30 V 2 mA Current Ig 0 for TIP141 146 Vce 40 V 2 mA for TIP142 147 Vce 50 V 2 mA leBo Emitter Cut off Current Vepo 5 V 2 mA Ic 0 VceEo sus Collector Emitter Ic 30 mA Sustaining Voltage for TIP140 145 60 V Ip 0 for TIP141 146 80 V for TIP142 147 100 V Vce sat Collector Emitter Ic 5A IB 10 mA 2 Vv Saturation Voltage Ic 10 A IB 40 mA V VBE on Base Emitter Voltage iIc 10A Vce 4V V hre DC Current Gain Ic 5 A Voer 4 V 1000 lc 10 A Voce 4 V 500 ton Turn on Time lc 10 A lpi 40 mA 0 9 us tott Turn off Time pert mA AL a 4 us For PNP types voltage and current values are negative 2 4 Lyg SGS THOMSON YI jmenosLzernomes TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 TO 218 SOT 93 MECHANICAL DATA 3 4 kay SGS THOMSON YI McroeLECTRONICS TIP140 TIP141 TIP142 TIP145 TIP146 TIP147 4
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