Kingston Technology ValueRAM 8GB DDR3 1333MHz Module
Contents
1. imit sequential with starting address 000 only 4 with CCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 18 30mm double sided component Continued gt gt kingston com Document No VALUERAM1032 001 A00 11 16 11 Page 1 continued ValueRAM MODULE DIMENSIONS a A Ts FULL RAD U A er Se A Sena e O UU 0O A One ee Se A O RAN T ACER A AN Y a J O Ju A VF ER A A PLUS 2 VIV UIIAIN VEN UO A Nn My RY UU U eh UU Nan Z JJ Nah ie Nap Noh O n ml units millimeters A 10 aly ND a F Oc E Dc 00 lt T lt p Le p ES kingston com Document No VALUERAM1032 001 A00 Page 22. kingston a ORL G Y Memory Module Specifications Value i KVR1333D359 8G 8GB 2Rx8 1G x 64 Bit PC3 10600 CL9 204 Pin SODIMM Important Information The module defined in this data sheet is one of several configurations available under this part number While all configurations are compatible the DRAM combination and or the module height may vary from what is described here DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 1G x 64 bit 8GB CL IDD 9 cycles DDR3 1333 CL9 SDRAM Synchronous DRAM 2Rx8 memory Row Cycle Time tRCmin 49 5ns min module based on sixteen 512M x 8 bit FBGA components The Retresh to Acive Refresh 260ns min SPD is programmed to JEDEC standard latency DDR3 1333 Command Time tRFCmin timing of 9 9 9 at 1 5V This 204 pin SODIMM uses gold Row Active Time tRASmin 36ns min contact fingers The electrical and mechanical specifications Power Operating 1 200W are as follows UL Rating 94 0 Operating Temperature 0 Cto 85 C FEATURES Storage Temperature 55 C to 100 C e JEDEC standard 1 5V 1 425V 1 575V Power Supply Power will vary depending on the SDRAM used e VDDQ 1 5V 1 425V 1 575V e 667MHz fCK for 1333Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e 8 bit pre fetch e Burst Length 8 Interleave without any l
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