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Kingston Technology ValueRAM 32GB DDR3-1333
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1. seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 30 00mm double sided component Continued gt gt kingston com Document No VALUERAM1135 001 A00 04 26 12 Page 1 continued ValueRAM MODULE DIMENSIONS Units millimeters Co KS CO cO CO CO Sei Es OR SS N Se D alpen 30 00 f 29 60x4 24 60 x2 21 80x2 ta 15 80x2 R 0 65 MAX TYPICAL 11 00x2 8 00x2 J 3 80 150 N 0 000 1 50 0 10 gt CHAMFER 0 50 X 45 DEG oe 4 PLACES DOC Ca LO LO SNT A eo PE LO 2 kingston com Document No VALUERAM1135 001 A00 Page 2
2. Kingston en ORL G Y Memory Module Specifications Value P KVR13R9D4K2 321 32GB 16GB 2G x 72 Bit x 2 pcs PC3 10600 CL9 Registered w Parity 240 Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR13R9D4K2 321 is a kit of two 2G x 72 bit CL IDD 9 cycles 16GB DDR3 1333 CL9 SDRAM Synchronous DRAM Row Cycle Time tRCmin 49 5ns min registered w parity Intel Compatibility Tested 2Rx4 ECC Refresh to Active Refesh 260ns min memory modules based on thirty six 1G x 4 bit FBGA compo Command Time tRFCmin nents per module Total kit capacity is 32GB The SPDs are Row Active Time tRASmin 36ns min programmed to JEDEC standard latency DDR3 1333 timing of Maximum Operating Power 6 411 W per module 9 9 9 at e Each EN DIMM EE SEN contact us UL Rating 04 V 0 The electrical and mechanical specifications are as follows Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C FEATURES Power will vary depending on the SDRAM and e JEDEC standard 1 5V 1 425V 1 575V Power Supply Register PLL used e VDDQ 1 5V 1 425V 1 575V e 667MHz fCK for 1333Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow
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