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Kingston Technology ValueRAM 4GB DDR3-1333
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1. IDD 9 cycles Row Cycle Time tRCmin 49 5ns min Refresh to Active Refresh 160ns min Command Time tRFCmin Row Active Time tRASmin 36ns min Maximum Operating Power 2 700 Wi UL Rating 94V 0 Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C Power will vary depending on the SDRAM used SDRAM SUPPORTED Hynix C Die Continued gt gt Document No VALUERAM1205 001 A00 05 11 12 Page 1 continued ValueRAM MODULE DIMENSIONS UI D i Daag iy ay A az Ka i i VR i ig N VW WW 1 VW K j d H Oh a 133 35 Units millimeters 30 00 18 80 15 80 11 00 8 00 0 00 0 00 54 70 kingston com Document No VALUERAM1205 001 A00 Page 2
2. Memory Module Specifications KVR13E9 4HC 4GB 2Rx8 512M x 72 Bit PC3 10600 CL9 240 Pin ECC DIMM DESCRIPTION This document describes ValueRAM s 512M x 72 bit 4GB DDR3 1333 CL9 SDRAM Synchronous DRAM 2Rx8 ECC memory module based on eighteen 256M x 8 bit FBGA compo nents The SPD is programmed to JEDEC standard latency DDR83 1333 timing of 9 9 9 at 1 5V This 240 pin DIMM uses gold contact fingers The electrical and mechanical specifica tions are as follows FEATURES e JEDEC standard 1 5V 1 425V 1 575V Power Supply e VDDQ 1 5V 1 425V 1 575V e 667MHz fCK for 1833Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR38 1333 e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Thermal Sensor Grade B e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 18 30mm double sided component kingston com kingston TECHINOLOGY ei Value SPECIFICATIONS CL
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