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Kingston Technology ValueRAM 16GB DDR3-1333
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1. d or write either on the fly using A12 or MRS e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e On DIMM thermal sensor Grade B e Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 30 00mm double sided component Continued gt gt kingston com Document No VALUERAM1134 001 A00 04 26 12 Page 1 continued ValueRAM MODULE DIMENSIONS Units millimeters Co KS CO cO CO CO Sei Es OR SS N Se D alpen 30 00 f 29 60x4 24 60 x2 21 80x2 ta 15 80x2 R 0 65 MAX TYPICAL 11 00x2 8 00x2 J 3 80 150 N 0 000 1 50 0 10 gt CHAMFER 0 50 X 45 DEG oe 4 PLACES DOC Ca LO LO SNT A eo PE LO 2 kingston com Document No VALUERAM1134 001 A00 Page 2
2. kingston Cann ORL G Y Memory Module Specifications Value P KVR13R9D4K2 16l 16GB 8GB 1G x 72 Bit x 2 pcs PC3 10600 CL9 Registered w Parity 240 Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR13R9D4K2 16l is a kit of two 1G x 72 bit CL IDD 9 cycles 8GB DDR3 1333 CL9 SDRAM Synchronous DRAM Row Cycle Time tRCmin 49 5ns min registered w parity Intel Compatibility Tested 2Rx4 ECC Berech iG Acive Bet eh 160ns min memory modules based on thirty six 512M x 4 bit FBGA Command Time tRFCmin components per module Total kit capacity is 16GB The SPDs Row Active Time tRASmin 36ns min are programmed to JEDEC standard latency DDR3 1333 timing Maximum Operating Power 6 951 W of 9 9 9 e 1 5V This SEN SE EE gold contact ee UL Rating 04 V 0 The electrical and mechanical specifications are as follows Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C FEATURES Power will vary depending on the SDRAM and e JEDEC standard 1 5V 1 425V 1 575V Power Supply Register PLL used e VDDQ 1 5V 1 425V 1 575V e 667MHz fCK for 1333Mb sec pin e 8 independent internal bank e Programmable CAS Latency 9 8 7 6 e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e 8 bit pre fetch e Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless rea
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