Kingston Technology HyperX 8GB DDR3-1600
Contents
1. 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS e Programmable Additive Latency 0 CL 2 or CL 1 clock e Programmable CAS Write Latency CWL 7 DDR3 1333 e Bi directional Differential Data Strobe e Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 e On Die Termination using ODT pin e Average Refresh Period 7 8us at lower than TCASE 85 3 9us at 85 C lt TCASE lt 95 C e Asynchronous Reset e PCB Height 1 180 80 00mm double sided component Continued gt gt kingston com Document No 4806270 001 A00 01 09 12 Page 1 continued MODULE DIMENSIONS its milli 133 35 30 00 Units millimeters 18 80 15 80 11 00 8 00 0 00 0 00 54 70 MODULE WITH HEAT SPREADER FOR MORE INFORMATION GO TO WWW KINGSTON COM All Kingston products are tested to meet our published specifications Some motherboards or system configurations may not operate at the published HyperX memory speeds and timing settings Kingston does not recommend that any user attempt to run their computers faster than the published speed Overclocking or modifying your system timing may result in damage to computer components kingston com Document No 4806272 001 A00 Page 22. Kingston Memory Module Specifications intel KHX1600C9D3B1RK2 8GX 8GB 4GB 512M x 64 Bit x 2 pcs DDR3 1600 CL9 240 Pin DIMM Kit inside SPECIFICATIONS CL IDD 9 cycles Row Cycle Time tRCmin 49 5ns min Refresh to Active Refresh 160ns min Command Time tRFCmin Row Active Time tRASmin 36ns min Power Operating 1 410 W per module UL Rating 94V 0 Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C Power will vary depending on the SDRAM used DESCRIPTION FEATURES Kingston s KHX1600C9D3B1RK2 8GX is a kit of two 512M x 64 e JEDEC standard 1 5V 1 425V 1 575V Power Supply bit 4GB DDR3 1600 CL9 SDRAM Synchronous DRAM 2Rx8 e VDDQ 1 5V 1 425V 1 575V memory modules based on sixteen 256M x 8 bit FBGA components per module Each module kit supports Intel xMP_ 667M z fCK for 1333Mb sec pin Extreme Memory Profiles Total kit capacity is 8GB Each e 8 independent internal bank module kit has been tested to run at DDR3 1600 at a low e Programmable CAS Latency 9 8 T 6 latency timing of 9 9 9 at 1 65V The SPDs are programmed to JEDEC standard latency DDR3 1333 timing of 9 9 9 at 1 5V Each 240 pin DIMM uses gold contact fingers and requires 1 5V The JEDEC standard electrical and mechanical specifi 8 bit pre fetch cations are as follows e Burst Length 8 Interleave without any limit sequential with Starting address 000 only
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