takeMS DDR3-1066 F, 1GB
Contents
1. Technical Datasheet si the best reason for saving takeMS TMS1GB364D08x 107xx USB Flash Description These memory devices are JEDEC standard unbuffered DIMMs based on CMOS DDR3 SDRAM technology using DDR3 SDRAMs in FBGA packages on a 240 pin glass epoxy substrate The memory array is designed with Double Data Rate DDR3 Synchronous DRAMs for unbuffered applications Fly by command address control bus architecture of DDR3 SDRAMs allows for concurrent operation thereby providing high effective bandwidth This main benefit of DDR3 is made possible by its 8 bit prefetch buffer DDR3 memory ensures a power consumption reduction of 30 compared to DDR2 modules due to DDR3 s 1 5 V supply voltage also defined as Enhanced low power features These modules feature Serial Presence Detect SPD based on a serial EEPROM device DDR3 SPD programming is based on a speed bin DDR3 latencies are numerically higher because the clock cycles by which they are measured are shorter Absolute latency ns is generally equal to or faster than DDR2 Features 240 pin Unbuffered DDR3 SDRAM JEDEC standard 1 5V I O Fly by command address control bus with on DIMM termination On die I O calibration engine On Die Termination ODT Serial Presence Detect SPD with EEPROM High precision calibration resistors Impedance controlled 6 layer PCB Technology JEDEC standard form factor 133 35 mm x 30 0 mm READ and WRITE calibration Improved t2. hermal design Operating Temperature 0 C 75 C Memary Flash Cords J the best reason for saving lt 9 Technical details 1024 MB longdimm module 128Mx8 IC organisation X64 module organisation 1066MHz PC3 8500 single sided 8 ICs CAS Latency 7 at max memclock For pin configuration please check www takems com support index php If you have any questions regarding our products you can contact us via email info takems com Order No TMS1GB364D08x 107xx Web www takems com E Mail info takems com Tel 49 7667 9414 0 Fax 49 7667 9414 444 Flash Cords USB Flash
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