Home

Atomic layer deposition system

1. Sor ay 2 os Revision 1 0 4 7 Right click the receipt area and load receipt A1203 200C from Jinyao s folder the chamber temperture should be set to 200 C 4 8 This receipt is calibrated to for 0 1 1nm cycle Al2O0 deposition 4 9 ww J iN Ge A His ae L LME Valve 1 Valve 2 gt F 5 i N i 4 4 10 Click Start run in the run cycle area You can see the pulses in the pressure plot area 4 11 After the run is over vent the system by set flow rate to 100sccm and remove your sample Close the lid and pump down with flow rate set to 15 sccm 4 12 Close mechanical valve 1 and 2 Run the same receipt for 10 cycles Let the system idle Write down your process on the log book
2. Revision 1 0 ALD SOP This is a shortened version that focuses mainly on the operation For more detailed instructions please refer to the user manual Cambridge NanoTech Savannah 100 AtomicLayer Deposition System 1 1 This document provides operating procedures and requirements to deposit Al2O3 films with the Cambridge nanotech Savannah 200 Atomic Layer Deposition system 1 2 System description Atomic layer deposition ALD is a technique that allows growth of thin films with atomic layer precision The ALD system in Nanomaterial and Nanodevice lab is capable of growth of many different material films including 2 1 You have to be authorized by Dr Tang and properly trained by Dr Tang s group member before operate the system 2 2 TMA is pyrophoric and ignites when in contact with the air Never remove TMA source 2 3 The chamber lid and the walls are HOT Use care when opening the chamber Do not place any flammable materials on or near the ALD machine 2 4 2 5 2 6 2l 2 8 Zo 2 10 Revision 1 0 The chamber lid cannot be lifted 1f the chamber is cold The temperature of the chamber outer heater should be set to at least 80 C Do not put in materials that will outgas Do not use a substrate having carbon tape Do not use vacuum grease on your substrate or in the chamber System is intended to have the pump running nitrogen flowing and heaters on at all times even when idle If restarting the sy
3. stem after it has been cold e g following a power outage or maintenance shutdown warm up the system first and follow the out gassing procedure completely as described in the system manual In case that either of the precursors is running out indicated by the disappearance of pulses during the running cycles contact Dr Tang for replacement Do not attempt to change precursors by yourself The largest wafer size supported is 8 circular Always set the center heater to 150 C and the outer heater to 150 C after you finish the growth Process Notes amp Items Advanced __ Linstruction value fil Manifold configuration Four ports Fi Flow sccm 415 15 4 Remaining cycles ma Total run time vi l 00 00 00 Gauge Pressure Torr Y 1E 0 1E 1 77 I I I 1 I I I Norsk 81900 81901 81902 81903 81904 81905 81906 81907 81908 81909 81910 Time s s Buttons Program Stop the Labview program Stop Valve Open and close the stop valve to the pump at Heaters Turns all the heaters ON OFF e Run Start abort deposition Revision 1 0 Receipt Area Cycle matrix Programming of the cycle recipe Right click this area will open a menu for open save edit receipt Instruction value BT codec w Save recipe pt w pulse gd wait goto heater stabilize flow stopvalve line ac out Inser
4. t Row Before Delete Row Empty Table 4 Operation instruction Load Unload 4 1 4 2 4 3 4 4 Close the stop valve and set the flow rate to 100 sccm to vent the chamber Only vent when system hot chamber gt 80 C at lower temperture the lid will not open Leave system vented for as short a time as possible Wait for the lid to rise slightly from the chamber It will take a few minute do not trust the gauge pressure Please be patient it is important to wait for the chamber to reach atmospheric pressure to preserve the integrity of the very expensive O ring Lift the lid and place your sample in the center of the chamber Close the lid Open the stop valve to pump down the chamber The base pressure should be less than 1 Torr depending on the flow rate Growth run Continuous flow mode recommended 4 5 4 6 Pump down the reactor chamber by opening the stop valve after loading sample Set the flow rate to 15sccm Make sure all heaters are set to the desired temperatures Note Heater 7 and 10 has to reach 150 C before deposition can be started otherwise you will damage the system P Am Lr e 5 AA de a DE S i pee E 4 E if ip os j 7 f 3 2 aa ais Te i N gt Te ap g x s T mi E reer fe 4 ae a H S ne Ne m re a i _ t t i

Atomic layer deposition system

Contents

Download Pdf Manuals

Related Search

Related Contents