Home

Star-Hspice Quick Reference Guide

Contents

1. 13 20 Star Hspice Quick Reference Guide 724 Chapter 1 4 Optimizing Data This chapter briefly describes how to optimize your design data The topics covered in this chapter are Analysis Statement DC TRAN AC Syntax PARAM Statement Syntax MODEL Statement Syntax Filters and Systems Laplace Transforms Analysis Statement DC TRAN AC Syntax General Form DC lt DATA filename gt SWEEP OPTIMIZE OPTxxx RESULTS ierr1 ierrr MODEL optmod DATA In line file of parameter data to use in the optimization MODEL The optimization reference name also specified in the MODEL optimization statement OPTIMIZE Indicates the analysis is for optimization Or AC lt DATA filename gt SWEEP OPTIMIZE OPTxxx RESULTS ierr ierrn MODEL optmod Star Hspice Quick Reference Guide 14 1 Optimizing Data Or TRAN lt DATA filename gt SWEEP OPTIMIZE OPTxxx RESULTS ierr ierrr MODEL optmod RESULTS The measurement reference name also specified in the MEASURE optimization statement See Analysis Statement DC TRAN AC in the Star Hspice User Guide PARAM Statement Syntax General Form Or PARAM parameter OPTxxx initial guess low limit upper limit PARAM parameter OPTxxx initial guess low limit upper limit delta delta OPTxxx parameter The final parameter value is the initial guess n delta Optimization parameter reference na
2. RISE r LAST FALL f LAST gt AT val Special case for trigger specification CROSS c The numbers indicate which occurrence of a RISE CROSS FALL or RISE event causes a FALL f measurement to be performed 15 8 Star Hspice Quick Reference Guide LAST TARG targ_val targ_var time_delay TRIG trig_val trig_var Print Commands Measurement is performed when the last CROSS FALL or RISE event occurs Beginning of the target signal specification Value of the targ_var at which the counter for crossing rises or falls is incremented by one Name of the output variable whose propagation delay is determined with respect to the trig var Amount of simulation time that must elapse before the measurement is enabled Beginning of the trigger specification Value of trig var at which the counter for crossing rises or falls increments by one Name of the output variable that determines the logical beginning of measurement See Target in the Star Hspice Manual Average RMS MIN MAX and Peak to Peak General Form Star Hspice Quick Reference Guide 15 9 MEASURE DCIACITRAN result func out var FROM val TO val GOAL val MINVAL val WEIGHT val Output Format lt DCIACITRAN gt FROM func GOAL MINVAL out_var result TO WEIGHT 15 10 Analysis type of the measurement If omitted the last analysis mode re
3. Star Hspice Quick Reference Guide Description Zero bias bottomwall capacitance Zero bias periphery capacitance Coefficient for forward bias depletion area capacitance formula Coefficient for forward bias depletion periphery capacitance formula Diodes Name Alias Unit M EXA MJ MJSW EXP PB PHI VJ PHA PHP TT V V S Default 0 5 0 33 0 8 PB 0 0 Description Area junction grading coefficient Periphery junction grading coefficient Area junction contact potential Periphery junction contact potential Transit time See Setting Juncap Parameters in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Metal and Poly Parameters Level 3 Name Alias Unit LM LP WM WP XM m m Default 0 0 0 0 0 0 0 0 0 0 Description Default length of metal Default length of polysilicon Default width of metal Default width of polysilicon Accounts for masking and etching effects in metal layer Star Hspice Quick Reference Guide Temperature Effects Name Alias Unit Default Description XOI 7000 Thickness of the poly to bulk oxide XOM A 10k Thickness of the metal to bulk oxide XP m 0 0 Accounts for masking and etching effects in poly layer See Setting Metal and Poly Capacitor Parameters for LEVEL 3 in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Noise Parameters L
4. You can perform several types of analysis with Star Hspice The topics covered in this chapter are DC Analysis AC Analysis Small Signal Network Analysis Temperature Analysis Transient Analysis FFT Analysis Worst Case Analysis DC Analysis Star Hspice can perform the following types of DC analysis DC Statement DC Sweep See DC Statement DC Sweeps in the Star Hspice Manual Sweep or Parameterized Sweep General Form DC varl start stopl incrl lt SWEEP 2 type np start2 stop2 gt Or varl start stopl incrl var2 start2 stop2 incr2 gt Star Hspice Quick Reference Guide 13 1 Analyzing Data Data Driven Sweep General Form Or Or Monte Carlo General Form Or varl type np start stopl lt SWEEP DATA datanm gt DC DATA datanm lt SWEEP var2 start2 stop2 incr2 gt DC DATA datanm varl type np start stopl lt SWEEP MONTE val DC MONTE val gt Optimization General Form Or DC DATA datanm OPTIMIZE opt_par_fun RESULTS MODEL optmod varl start stopl SWEEP OPTIMIZE OPTxxx RESULTS measname MODEL optmod DATA datanm incrl MODEL 13 2 Datanm is the reference name of a DATA statement Voltage current element model parameters or temperature increment values Optimization reference name used in the MODEL OPT statement Star Hspice Quick Refer
5. lt TD val gt lt RISE r LAST gt FALL f LAST gt lt CROSS cl LAST gt lt GOAL val gt lt MINVAL val WEIGHT val Or MEASURE lt DCITRANIAC gt result FIND out var WHEN out var2 out var3 lt TD val gt lt RISE r LAST gt FALL fl LAST gt lt CROSS c LAST GOAL val lt MINVAL val WEIGHT val Star Hspice Quick Reference Guide 15 13 Output Format Or MEASURE DCITRANIAC result FIND out varl AT val GOAL val lt MINVAL val WEIGHT val DCIACITRAN Analysis type of the measurement If omitted the last analysis type requested is assumed CROSS The numbers indicate which occurrence RISE of a CROSS FALL RISE event FALL f causes a measurement to be performed FIND Selects the FIND function GOAL Desired MEASURE value LAST Measurement is performed when the last CROSS FALL or RISE event occurs MINVAL If the absolute value of GOAL is less out var 1 2 3 result TD WEIGHT 15 14 than MINVAL the GOAL value is replaced by MINVAL in the denominator of the ERRfun expression Variables used to establish conditions at which measurement is to take place Name associated with the measured value in the Star Hspice output Time at which measurement is to start Calculated error is multiplied by the weight value Star Hspice Quick Reference Guide DOUT Statement WHEN S
6. lt Init gt model lt LoLim gt lt Hi Lim gt lt Inc gt keyname assignment paramnamel Parameter names are assigned to values OptParmFunc Optimization parameter function string Init Initial value of parameter real LoLim Lower limit for parameter real Star Hspice Quick Reference Guide 12 33 Controlling Input HiLim Upper limit for parameter real Inc Rounds to nearest lt Inc gt value real Note A parameter can be used in an expression only if it is defined PROTECT Statement General Form PROTECT The PROTECT command suppresses the printback of text See PROTECT Statement in the Star Hspice Manual TITLE Statement General Form Any string of up to 72 characters Or Title any string Title The first line of the simulation is always the title See Title of Simulation and TITLE Statement in the Star Hspice Manual UNPROTECT Statement General Form UNPROTECT The UNPROTECT command restores normal output functions from a PROTECT command See UNPROTECT Statement in the Star Hspice Manual 12 34 Star Hspice Quick Reference Guide Statements WIDTH Statement General Form WIDTH OUT 801132 OUT The output print width Permissible values are 80 and 132 See WIDTH Statement in the Star Hspice Manual Star Hspice Quick Reference Guide 12 35 Controlling Input 12 36 Star Hspice Quick Reference Guide 724 Chapter 1 3 Analyzing Data
7. 16 Charge parame FV QGIO Charge parame A QGAG Charge parame V 1 1 QGAD Charge parame V 1 1 QGGB Charge parame A 1V 1 100 QGCL Charge parameter F 2E 16 QGSH Sidewall F 1 16 capacitance QGDH Sidewall F 0 capacitance 8 14 Star Hspice Quick Reference Guide JFET Model Parameters Parameter Description Units Default QGGO Charge parameter F 0 MST Sub threshold slope V 1 0 drain parameter N Forward gate diode 1 ideality factor GAMMATC Linear temperature K 1 0 coefficient for GAMMA VBITC Linear temperature VK 1 0 coefficient for VBI CGSTCE Linear temperature K 1 0 coefficient for CGS CGDTCE Linear temperature K 1 0 coefficient for CGD MSTTC Linear temperature V 1K 1 0 coefficient for MST BETATCE Linear temperature K 1 0 coefficient for BETA Star Hspice Quick Reference Guide 8 15 JFET and MESFET Elements JFET Level 8 Materka Model The Star Hspice JEET amp MESFET model Level 8 See Compact dc Model of GaAs FETs for Large Signal Computer Calculation IEEE Journal of Solid State Circuits Volume SC 18 No 2 April 1983 Computer Calculation of Large Signal GaAs FET Amplifier Characteristics IEEE Transactions on Microwave Theory and Techniques Volume MTT 33 No 2 February 1985 has been implemented Using Level 8 with Star Hspice 1 Set Level 8 2 The default room temperature is 25 in Star Hspice but is 27 in most other simu
8. Emission coefficient Reverse bias slope coefficient Reverse diode current transition point See DC Model Parameters in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide Capacitance Model Parameters Name Alias Unit Default CBD F 0 CBS F 0 CI CDB F m 579 11 CSB CJA CJSW F m 0 CJP CJGATE F m CJSW FC 0 5 MJ EXA 0 5 EXJ EXS EXD MJSW 0 33 EXP NSUB ilem lel5 DNB NB PB PHA V 0 8 PHS PHD Star Hspice Quick Reference Guide MOSFET Element Statement Description Zero bias bulk drain junction capacitance Zero bias bulk source junction capacitance Zero bias bulk junction capacitance Zero bias sidewall bulk junction capacitance Only for ACM 3 sidewall facing gate Forward bias depletion capacitance coefficient not used Bulk junction grading coefficient Bulk sidewall junction grading coefficient Substrate doping Bulk junction contact potential MOSFET Introduction Name Alias Unit PHP TT V S Default PB 0 Description Bulk sidewall junction contact potential Transit time See Using Capacitance Model Parameters in the True Hspice Device Models Reference Manual Drain and Source Resistance Model Parameters Name Alias Unit RD RDC LRD WRD PRD RS LRS ohm sq ohm ohm m ohm m ohm m ohm sq ohm m Default 0 0 0 0 0 0 Description Dra
9. Or AC DATA datanm Or AC DATA datanm SWEEP var lt START gt start lt STOP gt stop lt STEP gt incr gt Or AC DATA datanm lt SWEEP var type np start stop gt Or DATA datanm lt SWEEP var START param_expr1 STOP param_expr2 STEP param_expr3 gt Or AC DATA datanm lt SWEEP var start_expr stop_expr step_expr gt Optimization General Form AC DATA datanm OPTIMIZE opt_par_fun RESULTS measnames MODEL optmod Random Monte Carlo General Form AC type np fstart fstop lt SWEEP MONTE val gt DATA datanm Data name referenced in the AC 13 6 statement Star Hspice Quick Reference Guide fstart fstop incr MONTE val np start stop SWEEP TEMP type var AC Analysis Starting frequency Final frequency Voltage current element or model parameter increment value Produces a number val of randomly generated values used to select parameters from a distribution Number of points per decade or depending on the preceding keyword Starting voltage current any element or model parameter value Final voltage current any element or model parameter value Indicates a second sweep is specified in the AC statement Indicates a temperature sweep Can be any of the following keywords DEC OCT LIN POI Name of an independent voltage or current source any element or model parameter or the keyword TEMP
10. Substrate current Substrate conductance LOG 10 IC LOG 10 IB Star Hspice Quick Reference Guide Alias BETA LV10 LOGBETAI LVII ICTOL LV12 IBTOL LV13 RB LV14 GRE LV15 GRC LV16 PIBC LV18 PIBE LV19 VBE LXO VBC LXI CCO LX2 CBO LX3 GPI 1 4 GU LX5 GM LX6 GO LX7 QBE LX8 Star Hspice Quick Reference Guide 15 27 Element Template Listings Description BETA LOG 10 BETA current Collector current tolerance Base current tolerance Base resistance Emitter conductance 1 RE Collector conductance 1 RC Photo current base collector Photo current base emitter VBE Base collector voltage VBC Collector current CCO Base current CBO ib vbe constant vbc gu ib vbc constant vbe gm ic vbe vbe constant vce go ic vce constant vbe Base emitter charge QBE Output Format Name CQBE QBC CQBC QCS CQCS QBX COBX GXO CEXBC CAP BE CAP IBC 15 28 Alias LX9 LX10 LXII LX12 LX13 LX14 1 15 LX16 LX17 LX18 LX19 LX20 Description Base emitter charge current CQBE Base collector charge QBC Base collector charge current Current substrate charge QCS Current substrate charge current CQCS Base internal base charge QBX Base internal base charge current CQBX 1 Rbeff Internal conductance GXO Base collector equivalent current CEXBC Base collector conductance GEQCBO no
11. lt IC Vds Vgs Vbs Ves Vps gt Drain diffusion area Source diffusion area Turning off BJT if equal to 1 Thermal capacitance per unit width Initial guess in the order SOI MOSFET channel length in meters Multiplier to simulate multiple SOI MOSFETs in parallel MOSFET model name reference SOI MOSFET element name Drain terminal node name or number Back gate or substrate node name or number Front gate node name or number Optional external body contact node name or number Star Hspice Quick Reference Guide NRB NRD NRS ns OFF PD PS RTHO w LEVEL 59 UC Berkeley BSIM3 SOI FD Model Number of squares for body series resistance Number of squares of drain diffusion for drain series resistance Number of squares of source diffusion for source series resistance Source terminal node name or number Sets initial condition to OFF in DC analysis Perimeter of drain junction including the channel edge Perimeter of source junction including the channel edge Thermal resistance per unit width MOSFET channel width in meters The UC Berkeley SOI BSIM3 SOD Fully Depleted FD model is now installed in Star Hspice as LEVEL 59 This model is described in the BSIM3SOI FD2 1 MOSFET MODEL User Manual which can be found at http www device eecs berkeley edu bsim3soi LEVEL 59 uses the same arguments described in LEVEL 57 Template Output on page 10 26 For more information about th
12. General Form DATA datanm LAM FILE filenamel 1 panme2 colnum gt lt FILE filename2 pnamel colnum pname2 colnum gt gt lt OUT fileout gt ENDDATA datanm 12 24 Specifies the data name referred to in the TRAN DC or AC statement Star Hspice Quick Reference Guide LAM MER filenamei pnami colnum fileout pvali Statements Specifies column laminated parallel merging data files to be used Specifies concatenated series merging data files to be used Specifies the name of the data file to be read Specifies the parameter names used for source value element value device size model parameter value and so on Specifies the column number in the data file for the parameter value Specifies the name of the data file to be written with all the data concatenated Specifies the parameter value See Column Laminated DATA Statement in the Star Hspice Manual DEL LIB Statement General Form DEL LIB lt filepath gt filename entryname DEL LIB libnumber entryname entryname filename Entry name used in the library call statement to be deleted Name of a file for deletion from the data file Star Hspice Quick Reference Guide 12 25 Controlling Input filepath Path name of a file if the operating system supports tree structured directories libnumber Library number used in the library c
13. PLOT and GRAPH statements Specifies whether Star Hspice outputs binary or ASCII when Star Hspice is run from Cadence Analog Artist Same as CDS See CDS If x is 2 enables the Zuken interactive interface See Interface Options in the Star Hspice Manual Analysis Options Option Description ASPEC Sets Star Hspice into ASPEC compatibility mode LIMPTS x Sets the total number of points that you can print or plot in AC analysis PARHIER Selects the parameter passing rules that control the evaluation order of subcircuit parameters SPICE Makes Star Hspice compatible with Berkeley SPICE Star Hspice Quick Reference Guide 12 7 Controlling Input Option SEED Description User specified random number generator starting seed for Monte Carlo analysis See Analysis Options in the Star Hspice Manual Error Options Option BADCHR DIAGNOSTIC NOWARN WARNLIMIT X Description Generates a warning when a nonprintable character is found in an input file Logs the occurrence of negative model conductances Suppresses all warning messages except those generated from statements in ALTER blocks Limits the number of times that certain warnings appear in the output listing thus reducing output listing file size See Error Options in the Star Hspice Manual Version Options Option Description H9007 Sets general control option default values to 12 8 correspond to the values fo
14. Reference Manual Star Hspice Quick Reference Guide 10 43 5 MOSFET Models LEVEL 62 RPI Poli Si TFT Model Star Hspice LEVEL 62 is an AIM SPICE MOS 16 poly silicon Poli Si thin film transistor TFT model developed by Renssalear Polytechnic Institute LEVEL 62 uses the general model statement described in MOSFET Model Statement on page 9 3 For more information about this model see LEVEL 62 RPI Poli Si TFT Model in the True Hspice Device Models Reference Manual LEVEL 62 with Star Hspice Set LEVEL 62 to use the AIM SPICE MOS 16 Poli Si TFT model Default value for L is 100 m default value for W is 100 m The LEVEL 62 model is a 3 terminal model No bulk node exists therefore no parasitic drain bulk or source bulk diodes are appended to the model You can specify a fourth node but it does not affect simulation results The default room temperature is 25 C in Star Hspice but 27 C in some other simulators You can choose whether to set the nominal simulation temperature to 27 C by adding OPTION TNOM 27 to the netlist See Using LEVEL 62 in the True Hspice Device Models Reference Manual 10 44 Star Hspice Quick Reference Guide MOS Level 63 Philips MOS11 Model MOS Level 63 Philips MOS11 Model The Philips MOS Model 11 Level 1100 and 1101 are available as Level 63 in the Avant True Hspice models based on the Unclassified Report NL UR 2001 813 by R Langevelde Philips
15. VERSION CORSRD Star Hspice Quick Reference Guide Default 64 1 0 O no Description Model selector Model version number Flag Indicates whether to include the Rs and Rd contact resistors and whether to solve equations iteratively CORSRD 1 yes MOSFET Models Table 10 1 Level 64 Model Selectors Sheet 2 of 5 Parameter COOVLP Default 0 Description Overlap capacitance model selector COOVLP 1 constant value COOVLP 0 approximating the linear reduction of the field COOVLP I considering the lateral impurity profile COISUB 10 48 0 yes Substrate current model selector Star Hspice Quick Reference Guide COISUB 0 yes COISUB 1 no Level 64 HiSIM1 0 Model Table 10 1 Level 64 Model Selectors Sheet 3 of 5 Parameter Default Description COIIGS O yes Gate tunneling current model selector COIIGS 0 yes e COIIGS 1 no This model is not activated in the HiSIMI O release COGIDL O yes Gate induced drain leakage GIDL current model selector COGIDL 0 yes e COGIDL 1 no This model is not activated in HiSIM1 0 release CONOIS O no 1 f noise model selector CONOIS 0 no e CONOIS 1 yes Star Hspice Quick Reference Guide 10 49 MOSFET Models Table 10 1 Level 64 Model Selectors Sheet 4 of 5 Parameter NOISE Default Description Channel thermal and flicker no
16. XXX element name Must begin wit y Q BJT el Must begin with Q which can be followed by up to 1023 alphanumeric characters nc Collector terminal node name or number nb Base terminal node name and number ne Emitter terminal node name or number ns Substrate node name or number t Self heating node name or number 7 48 Star Hspice Quick Reference Guide mname AREA OFF VBE VCE DTEMP Level 11 UCSD HBT Model BJT model name reference The normalized emitter area Sets initial condition to OFF for this element in DC analysis OFF can t be used with VBE or VCE Initial internal base emitter voltage Initial internal collector emitter voltage Multiplier to simulate multiple BJTs in parallel The difference between the temperature of the element and the circuit For more information see http hbt ucsd edu Also see BJT Level 11 UCSD HBT Model in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 7 49 BUT Element 7 50 Star Hspice Quick Reference Guide 724 Chapter 8 JFET and MESFET Elements This chapter provides an overview of the JFET MESFET and GASFET elements The topics covered in this chapter are General Form for Elements JFET and MESFET Model Statements JFET Model Parameters For more detailed information see and MESFETs in the Star Hspice Manual General Form for Elements General Form Jxxx nd ng ns nb
17. by which Delta the internal timestep is decreased for an iteration set that does not converge Determines the timestep in the algorithms used for transient analysis siimulations 12 19 Controlling Input Option IMAX x ITL4 x ITL3 x ITL4 x ITL5 x RELVAR x RMAX x RMIN x SLOPETOL x TIMERES x 12 20 Description Determines the maximum timestep in the timestep algorithms used for transient analysis simulations Same as IMIN See IMIN Same as IMAX See IMAX Sets the transient analysis total iteration limit Used with ABSVAR and the timestep algorithm option DVDT RELVAR sets the relative voltage change for LVLTIM 1 or 3 Sets the TSTEP multiplier which determines the maximum value DELMAX that can be used for the internal timestep Delta Sets the minimum value of Delta internal timestep Sets a lower limit for breakpoint table entries in a piecewise linear PWL analysis Sets a minimum separation between breakpoint values for the breakpoint table Star Hspice Quick Reference Guide Option DVTR IMAX x ITL4 ITL3 x LVLTIM x MAXORD x METHOD na me MU x INTERP ITRPRT Star Hspice Quick Reference Guide Model Analysis Options Description Allows the use of voltage limiting in transient analysis Determines the maximum timestep in the timestep algorithms used for transient analysis simulations Deter
18. which you may create a hardcopy plot Screensave Option The SCREENSAVE function produces a file that can later be displayed on the terminal The function is useful for making video slides Print Commands CR Print with the default printer 1 n 1 Print with one of printer options n Save the screen into a preview file Star Hspice Quick Reference Guide 15 5 Output Format PRINT Statement General Form PRINT antype ov ov2 ovn See PRINT Statement in the Star Hspice Manual PLOT Statement General Form PLOT ov lt plol phil gt ovn lt plo32 phi32 gt See PLOT Statement in the Star Hspice Manual PROBE Statement General Form PROBE antype ovl ovn See PROBE Statement in the Star Hspice Manual GRAPH Statement General Form GRAPH antype MODEL mname gt unaml gt 1 lt unam2 0V2 lt gt ovn plo phi antype Type of analysis for outputs DC AC TRAN NOISE or DISTO mname Plot model name referenced by the GRAPH statement ovl ovn Output variables to be printed plotted plo phi Lower and upper plot limits unaml User defined output names See Statement in the Star Hspice Manual 15 6 Star Hspice Quick Reference Guide Print Commands MODEL Statement for GRAPH General Form MODEL mname PLOT pnaml vall pnam2 val2 mname Plot model name re
19. 0 Forward early voltage BF 215 0 Ideal forward current gain XIBI 0 0 Fraction of ideal base current that belongs to the sidewall IBF A 2 7e 15 Saturation current of the non ideal forward base current MLF V 2 0 Non ideality factor of the non ideal forward base current IK A 0 1 Collector emitter high injection knee current BRI 7 0 Ideal reverse current gain 7 20 Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model Basic Parameters Level 504 Parameters Unit Default Description IBR A 1 0e 15 Saturation current of the non ideal reverse base current VLR V 0 2 Cross over voltage of the non ideal reverse base current XEXT 0 63 Part of Iex Qex Qtex and Isub that depends on the base collector voltage Vbc1 Avalanche Model Parameters Level 504 Parameters Unit Default Description WAVL m l le 6 Epilayer thickness used in weak avalanche model VAVL 3 0 Voltage determining the curvature of avalanche current Star Hspice Quick Reference Guide 7 21 BUT Element Avalanche Model Parameters Level 504 Parameters SFH Unit Default 0 3 Description Current spreading factor of avalanche model when EXAVL 1 Resistance and Epilayer Parameters Level 504 Parameters RE RBC RBV RCC RCV SCRCV 7 22 Unit Ohm Ohm Ohm Ohm Ohm Ohm Default 5 0 23 0 18 0 12 0 150 0 1250 0 Description Emitter resistance Constant
20. 1 60212e 19 Electron charge t Temperature in degrees Kelvin At t tnom Nominal temperature in degrees Kelvin user input in degrees C Tnom 273 15 TNOM vt t k t q Thermal voltage vt tnom k tnom q Thermal voltage Star Hspice Quick Reference Guide 1 7 Introduction Star Hspice Quick Reference Guide 1724 Chapter 2 Discrete Device Library DDL Star Hspice s full Discrete Device Library is a collection of models of discrete components for use with HSPICE Included are Diodes FETs s MACROS op amps and comparators Burr Brown PMI Signetics and TI See Discrete Device Libraries in the Star Hspice Manual The topics covered in this chapter are DDL Use DDL Access DDL Use General Form nl n2 subcircuitname PAR 1 val nl n2 Node names PARI User available parameter defined at top of each macro subcircuit Model name taken from DDL list name Subcircuit call Star Hspice Quick Reference Guide 2 1 Discrete Device Library DDL DDL Access HSPICE automatically looks for a file in the local directory named hspice ini This name can be overridden with an entry in any meta cfg file of default_include lt file name gt Example hspice ini sample Automatic Include File Option OPTION search usr meta h92 lib pmi search usr meta h92 lib burr_brn search usr meta h92 lib linear search usr meta h92 lib signet search usr meta h92 lib ti search usr meta h92 l
21. 2 0 Description Flicker noise exponent Flicker noise coefficient Channel thermal noise coefficient Noise equation selector See Using Noise Parameters in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 9 13 5 MOSFET Introduction Temperature Effects Parameters Name Alias Unit BEX CTA CTP EG FIEX 1 GAP2 LAMEX MJ 9 14 1 K 1 K eV Default 1 5 0 0 0 0 7 02e 4 1108 1 0 0 5 Description Low field mobility UO temperature exponent Junction capacitance CJ temperature coefficient Junction sidewall capacitance CJSW temperature coefficient Energy gap for pn junction diode Bulk junction bottom grading coefficient First bandgap correction factor Second bandgap correction factor LAMBDA temperature coefficient Emission coefficient Bulk junction bottom grading coefficient Star Hspice Quick Reference Guide MOSFET Element Statement Name Alias Unit Default Description MJSW 0 33 Bulk junction sidewall grading coefficient PTA VPK 0 0 Junction potential PB temperature coefficient PTC 0 0 Fermi potential PHI temperature coefficient PTP VPK 0 0 Junction potential PHP temperature coefficient TCV 0 0 Threshold voltage temperature coefficient TLEV 0 0 Temperature equation LEVEL selector TLEVC 0 0 Temperature equation LEVEL selector TRD 1 K 0 0 Temperature coeff
22. Behavior Macromodeling ENDS or EOM Statement General Form ENDS lt SUBNAM gt Or EOM lt SUBNAM gt See ENDS or EOM Statement in the Star Hspice Manual Subcircuit Calls General Form Xyyy nl n2 n3 subnam parnam val M val M Multiplier nl Node names for external reference parnam A parameter name set to a value for use only in the subcircuit subnam Subcircuit model reference name Xyyy Subcircuit element name See Subcircuit Call Statement in the Star Hspice Manual Voltage and Current Controlled Elements Star Hspice supports the following voltage and current controlled elements For detailed information see Voltage and Current Controlled Elements in the Star Hspice Manual 11 2 Star Hspice Quick Reference Guide Voltage and Current Controlled Elements G Elements Voltage Controlled Current Source VCCS Linear General Form n n lt VCCS gt in in transconductance lt MAX val gt lt MIN val gt lt TC l val gt lt TC2 val gt M val lt SCALE val gt lt ABS 1 gt lt IC val gt Polynomial General Form Gxxx n n VCCS POLY ndim inl inl lt inndim inndim gt lt MAX val gt lt MIN val gt lt SCALE val gt lt M val gt lt TCl val gt lt TC2 val gt lt ABS 1 gt pO pl IC vals Piecewise Linear General Form Gxxx n n VCCS PWL 1 in in DELTA val lt SCALE val gt lt M val gt lt TCl
23. Conventions node 1l List of I O buffer external nodes The node 2 number of nodes and corresponding rules node N are specific to different buffer types see later sections in this chapter Limitations and Restrictions The series series switch and terminator buffers are not implemented in the 00 4 version of Star Hspice You can simulate the terminator by using other existing Star Hspice elements resistors capacitors and voltage dependent current sources For details see Limitations and Restrictions in the True Hspice Device Models Reference Manual Buffers Input Buffer Syntax B input nd pc nd gc nd in nd out of in file filename model model_name typ typlminImaxlfastlslow power onloff buffer 1linput interpol 112 nowarn c_com_pc c_com_pc_value c com gc c com gc value where the total number of external nodes is equal to 4 See Input Buffer in the True Hspice Device Models Reference Manual 5 2 Star Hspice Quick Reference Guide Buffers Output Buffer Syntax B output nd pu nd pd nd out nd in nd pc nd gc file file_name model model_name typ typlminImax fastlslow power onloff buffer 2loutput Xv_pu state_pu xv_pd state_pd interpol 112 ramp fwf 0l1I2 ramp rwfz 0l1123 fwf tune fwf tune value rwf tune rwf tune value nowarn com pu c com pu value c com pd c com pd value com com pc value C com gc c com gc v
24. DC analysis PD Perimeter of the drain junction including the channel edge PDBCP Parasitic perimeter length for body contact at drain side Star Hspice Quick Reference Guide 10 23 MOSFET Models PS PSBCP RDC RSC RTHO TNODEOUT VBSUSR W Perimeter of the source junction including the channel edge Parasitic perimeter length for body contact at source side Additional drain resistance due to contact resistance with units of ohms Additional source resistance due to contact resistance with units of ohms Thermal resistance per unit width Temperature node flag indicating the use of T node Optional initial value of Vbs specified by user for transient analysis MOSFET channel width in meters The UC Berkeley SOI model BSIM3 SOI supports Fully Depleted FD Partially Depleted PD and Dynamically Depleted DD SOI devices of which BSIM3PD2 0 1 for PD SOI devices is Star Hspice LEVEL 57 This model is described in the BSIM3PD2 0 MOSFET MODEL User s Manual which can be found at http www device eecs berkeley edu bsim3soi Also see LEVEL 57 UC Berkeley BSIM3 SOI Model in the True Hspice Device Models Reference Manual 10 24 Star Hspice Quick Reference Guide LEVEL 57 UC Berkeley BSIM3 SOI Model le BSIM3 SOI PD in Star HSPICE To use PD versions 2 0 2 2 and 2 21 in Star Hspice apply VERSION For example PD2 0 is invoked when VERSION 2 0 PD2 2 and PD2 21 are invoked
25. DISTO Statement AC Small Signal Distortion Analysis General Form DISTO Rload inter skw2 refpwr lt spwf gt gt gt gt Star Hspice Quick Reference Guide 13 7 Analyzing Data inter Interval at which a distortion measure summary is to be printed refpwr Reference power LEVEL used in computing the distortion products Rload The name of the output load resistor into which the output power is fed skw2 Ratio of the second frequency F2 to the nominal analysis frequency F1 spwf Amplitude of the second frequency F2 See DISTO Statement AC Small Signal Distortion Analysis in the Star Hspice Manual NOISE Statement AC Noise Analysis General Form NOISE ovv srcnam inter inter Interval at which a noise analysis summary is to be printed inter specifies a number of frequency points summary in the AC sweep ovv Nodal voltage output variable defining the node at which the noise is summed srenam Name of the independent voltage or current source used as the noise input reference See NOISE Statement AC Noise Analysis in the Star Hspice User Guide 13 8 Star Hspice Quick Reference Guide Small Signal Network Analysis Statement Noise Folding Analysis General Form SAMPLE FS freq TOL val NUMF val lt MAXFLD val BETA val BETA Integrator duty cycle specifies an optional noise integrator at the sampling node FS freq Sample
26. ERR3 FROM Beginning of the ERRfun calculation Star Hspice Quick Reference Guide 15 11 Output Format IGNORIYMIN meas_var MINVAL result TO WEIGHT YMAX If the absolute value of meas var is less than IGNOR value then this point is not considered in the ERRfun calculation Name of any output variable or parameter in the data statement If the absolute value of meas var is less than MINVAL the meas var value is replaced by MINVAL in the denominator of the ERRfun expression Name associated with the measured result in the output End of the ERRfun calculation The calculated error is multiplied by the weight value If the absolute value of meas var is greater than the YMAX value then this point is not considered in the ERRfun calculation See ERROR Function in the Star Hspice User Guide 15 12 Star Hspice Quick Reference Guide Print Commands Find and When Functions General Form MEASURE DCITRANI AC result WHEN out var val lt TD val lt RISE r LAST gt FALL f LAST gt lt CROSS c LAST gt lt GOAL val gt lt MINVAL val gt lt WEIGHT val gt Or MEASURE lt DCITRANIAC gt result WHEN _ 1 out_var2 lt TD val gt lt RISE r I LAST gt FALL f LAST gt lt CROSS cl LAST gt lt GOAL val gt MINVAL val WEIGHT val Or MEASURE DCITRANIAC result FIND out 1 WHEN out var2 val
27. Format Limiting the Size of the Graph Data File The option PROBE limits the number of curves stored to those nodes specified in the Hspice input file s PRINT PLOT OPTION PROBE and GRAPH statements The option INTERP for transient analysis only limits the number of points stored The option INTERP preinterpolates the output to the interval specified on the TRAN statement Automatic Hardcopy During HSPICE Run GRAPH statement will automatically produce a hardcopy plot A TITLE placed before each GRAPH will set the graph title Otherwise the simulation title will be used The option POST in conjunction with GRAPH will create a graph data file Starting AvanWaves Command line AvanWaves command line definition is awaves d lt path gt lt design name gt c config name laf windows 1 d The name of the design to be opened on invoking AvanWaves c Specifies that a previously saved configuration for the current design is to be used upon the initialization of AvanWaves laf windowsl Specifies the window manager style to be openlookl used The default is Motif motif 15 2 Star Hspice Quick Reference Guide Setup Commands Cmd Default I ES XMIN X LIM XMAX Y AUTO YMIN YMAX XS YS LIN P 1 NONE T ON M NO XG YG ON D lt Graphing Results in AvanWaves Description Name input file Set range defaults for all panels Set x or y
28. Heavily doped region sheet resistance Gate sheet resistance Lightly doped region sheet resistance Default width of FET The difference between drawn amp actual or optical device width See Gate Diode DC Parameters in the True Hspice Device Models Reference Manual Gate Capacitance LEVEL 1 2 and 3 Parameters Name Alias Unit CAPOP CALPHA ALPHA Default 0 0 Star Hspice Quick Reference Guide Description Capacitor model selector Saturation factor for capacitance model CAPOP 2 only JFET and MESFET Elements Name Alias Unit CAPDS F CGAMDS GAMDS CGD F CGS F CRAT GCAP F Default 0 0 0 0 0 0 666 Description Drain to source capacitance for TriQuint model Threshold lowering factor for capacitance CAPOP 2 only Zero bias gate drain junction capacitance Zero bias gate source junction capacitance Source fraction of gate capacitance used with GCAP Zero bias gate capacitance See Gate Capacitance LEVEL 1 2 and 3 Parameters in the True Hspice Device Models Reference Manual DC Model LEVEL 1 Parameters Name Alias Unit LEVEL BETA amp V 8 6 Default 1 0 1 0e 4 Description LEVEL 1 invokes SPICE JFET model Transconductance parameter gain Star Hspice Quick Reference Guide Name Alias Unit Default LAMBDA _ 1 V 0 0 ND 1 V 0 0 NG 0 0 VTO V 2 0 JFET Model Parameters Description Channel length modulation par
29. Initial internal base emitter voltage Initial internal collector emitter voltage Multiplier to simulate multiple BJTs in parallel The difference between the temperature of the element and the circuit 745 BUT Element VBIC99 Model The VBIC99 covers a couple of effects that are improved compared to the VBIC95 model The covered effects are Addition of temperature dependency for several parameters Base emitter breakdown model Reach through model for base collector depletion capacitance High current beta rolloff effect Fixed collector substrate capacitance Reverse transport saturation current Using VBIC99 with Star Hspice 1 Set Level to 9 to identify the model as a VBIC99 bipolar junction transistor model 2 Reference temperature TREF equals to 27 degrees 3 VBIC99 model is not supported with AREA scaling Multiplication scaling is just supported In HSPICE the default AREA value is 1 0 4 Self heating is enabled for this model Model parameters are RTH and CTH 7 46 Star Hspice Quick Reference Guide Level 10 MODELLA Model Level 10 MODELLA Model The 1 110 Modella model provides an extensive description of a lateral integrated circuit junction isolated PNP transistor The equivalent circuit analytical equations and model parameters are derived directly from the physics and structure of the lateral PNP The following list summarizes the major features in level 10 1 Current
30. Input LIB Library File Definition Statement General Form LIB entrynamel ANY VALID SET OF Star Hspice STATEMENTS ENDL entrynamel LIB entryname2 ANY VALID SET OF Star Hspice STATEMENTS ENDL entryname2 LIB entryname3 ANY VALID SET OF Star Hspice STATEMENTS ENDL entryname3 The text following a library file entry name must consist of valid Star Hspice statements See LIB Library File Definition Statement in the Star Hspice Manual LIB Nested Library Calls Library calls may be nested in other libraries provided they call different files Library calls may be nested to any depth See LIB Nested Library Calls in the Star Hspice Manual 12 30 Star Hspice Quick Reference Guide Statements MALIAS Statement You can use the MALIAS statement to assign an alias another name to a diode BJT JFET or MOSFET model that you defined in a MODEL statement The syntax of the MALIAS statement is MALIAS model name alias namel alias 2 MODEL Statement General Form MODEL mname type VERSION version number pnamel vall pname2 val2 gt OPT optimization model PJF p channel JFET model PLOT plot model for the GRAPH statement PMOS p channel MOSFET model PNP pnp BJT model R resistor model U lossy transmission line model lumped W lossy transmission line model SP S Parameter mname Model name reference pnamel Parameter na
31. Reference Guide DC and Transient Output DC and Transient Output See DC and Transient Output Variables in the Star Hspice Manual Nodal Voltage General Form V nl lt n2 gt nl n2 Defines nodes between which the voltage difference n1 n2 is to be printed plotted See Nodal Voltage Syntax in the Star Hspice Manual Current Voltage Sources General Form 1 Vxxx Vxxx Voltage source element name See Current Voltage Sources in the Star Hspice Manual Current Element Branches General Form In Wwww n Node position number in the element statement Wwww Element name See Current Element Branches in the Star Hspice Manual Power Output See Power Output in the Star Hspice Manual Star Hspice Quick Reference Guide 15 17 Output Format Print Plot Power General Form PRINT antype ov ov2 ovn Or PLOT antype ov plol phil ovn lt plon phin gt antype Type of analysis for the specified plots DC AC TRAN NOISE or DISTO ovl Output variables to plot plol phil Lower and upper plot limits Power calculation is associated only with transient and DC sweep analyses The MEASURE statement may be used to compute the average rms minimum maximum and peak to peak value of the power POWER invokes the total power dissipation output See Print or Plot Power in the Star Hspice User Guide AC Analysis Output See AC Analysis Outpu
32. Scaling Buffer Strength Original Circuit for a Differential Output Buffer Bufferl nd pul nd_pdl nd outl _ 1 nd file lt filenamel gt mode l lt modelnamel gt Buffer2 nd_pu2 nd_pd2 nd_out2 nd_pc2 nd_gc2 file lt filename2 gt mode R load n outl n out2 R l lt modelname2 gt load value Scaled Circuit for a Differ ential Output Buffer Bufferl nd pul pdl nd outl nd pcl nd file filenamei mode l modelnamei Buffer2 nd pu2 pd2 nd out2 nd pc2 nd gc2 file lt filename2 gt mode l modelname2 V sense n outl n outl prime 0V F element n out2 n outl prime v sense K 1 R load n outl prime n out2 R load value Star Hspice Quick Reference Guide IBIS Conventions Star Hspice Quick Reference Guide 724 Chapter 6 Diodes The topics covered in this chapter are Diode Element Junction Model Statement Junction Model Parameters Temperature Effects Fowler Nordheim Diode Level 4 JUNCAP Diode Model Diode Element General Form nplus nminus mname AREA area PJ gt val gt WP val LP val WM val LM val OFF IC vd M val DTEMP val Or Dxxx nplus nminus mname W width lt L length WP val LP val WM val LM val OFF IC vd M val DTEMP val AREA Area of the diode Star Hspice Quick Refere
33. Star Hspice Manual F Element Parameters Parameter ABS CCCS DELAY DELTA Fxxx gain gatetype k IC M MAX MIN Heading Output is absolute value if ABS 1 Keyword for current controlled current source Keyword for the delay element Used to control the curvature of the piecewise linear corners Current controlled current source element name Current gain May be AND NAND OR or NOR Initial condition Number of replications of the element in parallel Maximum output current value Minimum output current value Star Hspice Quick Reference Guide 11 135 Behavior Macromodeling Parameter n NPDELAY PO P1 POLY PWL SCALE TC2 TD vnl xd us yl Heading Positive or negative controlled source connecting nodes Sets the number of data points to be used in delay simulations The polynomial coefficients Polynomial dimension Piecewise linear function keyword Element value multiplier First and second order temperature coefficients Time delay keyword Names of voltage sources through which the controlling current flows Controlling current through vnl source Corresponding output current values of x See E Element Parameters in the Star Hspice Manual 11 14 Star Hspice Quick Reference Guide Voltage and Current Controlled Elements H Elements Current Controlled Voltage Source CCVS Linear General Form Hxxx n n lt C
34. Table 10 3 Level 64 Temperature Dependence Parameters Parameter Default Description BGTMPI 9 03e bandgap narrowing SeVK BGTMP2 3 05e bandgap narrowing TeVK Star Hspice Quick Reference Guide 10 53 MOSFET Models Table 10 4 Level 64 Quantum Effect Parameters Parameter Default Description 0 0mV coefficient for quantum mechanical effect QME2 0 0V coefficient for quantum mechanical effect QME3 0 0m coefficient for quantum mechanical effect Table 10 5 Level 64 Poly Depletion Parameters Parameter Default Description PGD1 0 0V strength of poly depletion PGD2 0 0V threshold voltage of poly depletion PGD3 0 0 Vas dependence of poly depletion 10 54 Star Hspice Quick Reference Guide Level 64 HiSIM1 0 Model Table 10 6 Level 64 Short Channel Parameters Parameter Default Description PARLI 1 0 strength of lateral electric field gradient PARL2 2 2e 8m depletion width of channel contact junction SCI 13 5v short channel coefficient 1 SC2 18 short channel coefficient 2 SC3 0 0V 2m short channel coefficient 3 SCPI 0 0v7 short channel coefficient 1 for pocket SCP2 0 0V2 short channel coefficient 2 for pocket SCP3 0 0V2m short channel coefficient 3 for pocket Star Hspice Quick Reference Guide 10 55 MOSFET Models Table 10 7 Level 64 Narrow Channel Parameters Parameter Default Description WFC 0 0m F voltag
35. crowding under the emitter is modelled 2 The forward early voltage is dependent on Vcb and Veb 3 Fall off of ft and hfe is not only due to high injection but also to ohmic voltage drop across the emitter 4 Separate saturation current for the substrate base diode Set LEVEL 10 to use the Level 10 Modella Model The default room temperature is 25 in Star Hspice If LEVEL 10 model parameters are specified at 27 use OPTION TNOM 27 See BJT Level 10 Model Parameters in the True Hspice Device Models Reference Manual Level 11 UCSD HBT Model 1 Most formulations from Berkeley SPICE have been grandfathered not all are retained 2 The HBT model allows various degrees of trade off between accuracy and computational complexity Star Hspice Quick Reference Guide 7 47 BUT Element 3 Flags permit turning off several features of the model in order to allow faster computation or easier convergence 4 The default room temperature is 25 C in Star Hspice but is 27 in most other simulators 5 The model parameter set should always include the model reference temperature TREF The default value for TREF is 27 6 DTEMP can be used with this model Element Syntax The element syntax of BJT Level 11 is General Form nc nb ne ns mname lt AREA val gt lt OFF gt lt VBE val gt lt VCE val gt lt M val gt lt DTEMP val gt where the lt angle brackets gt indicate optional parameters
36. netlist sp design cfg configuration Output X is alter number usually 0 N is the statement number in one netlist starting at 0 graph data trX transient analysis swX dc sweep ac analysis mtX tran Measure msX dc Measure Star Hspice Quick Reference Guide 1 3 Introduction maX ac Measure pwIN from STIM TRAN PWL datN trX from STIM TRAN DATA datN_acX from STIM AC DATA datN_swX from STIM DC DATA vecN_trX from STIM TRAN VEC hardcopy data grX from GRAPH Input Netlist File For a complete description of HSPICE installation system configuration setup and basic operation please refer to the Star Hspice Manual Volume 1 Simulation and Analysis HSPICE now accepts input line lengths of 1024 characters Sample Input Netlist File Structure TITLE or OPTIONS TRAN lt AC gt DC OP TEMPERATURE PRINT PLOT GRAPH PROBE 14 Implicit first line becomes input netlist file title Comments to describe the circuit Set conditions for simulation analysis Sets the circuit temperatures for the entire circuit simulation Sets print plot graph and probe variables Star Hspice Quick Reference Guide Input and Output Files or NODESET Sets input state can also be put in initial conditions SOURCES Sets input stimulus NETLIST Circuit description MACRO libraries LIBRARY and INC lt PROT
37. part of CJC 7 15 BUT Element Parameters MC XCJC VGE VGB VGC VGJ VI NA ER 7 16 Unit cm 3 Default 0 5 0 1 1 01 1 18 1 205 0 040 3 0E17 2 E 3 Description Collector current modulation coefficient Fraction of the collector base depletion capacitance under the emitter area Band gap voltage of the emitter Band gap voltage of the base Band gap voltage of the collector Band gap voltage recombination emitter base junction Ionization voltage base dope Maximum base dope concentration Temperature coefficient of VLF and VLR Star Hspice Quick Reference Guide Parameters AB AEPI AEX AC KF KFN AF ISS IKS Unit LEVEL 6 Philips Bipolar Model Default 1 35 2 15 1 0 0 4 2 E 16 2 E 16 1 0 6 E 16 5 E 6 Star Hspice Quick Reference Guide Description Temperature coefficient resistivity of the base Temperature coefficient resistivity of the epilayer Temperature coefficient resistivity of the extrinsic base Temperature coefficient resistivity of the buried layer Flicker noise coefficient ideal base current Flicker noise coefficient non ideal base current Flicker noise exponent base substrate saturation current Knee current of the substrate BUT Element Parameters CJS VDS PS VGS AS Unit Default 1 e 12 0 5 0 33 1 15 2 15 Description Zero bia
38. saturation current at 1 volt bias Effective drain bulk voltage BETA effective GAMMA effective AL MOS6 amount of channel length modulation only valid for LEVELs 1 2 3 and 6 UB effective only valid for LEVELs 1 2 3 and 6 Star Hspice Quick Reference Guide Alias VG LV25 VFBEFF LV26 _ LV31 IDSTOL LV32 IDDTOL LV33 COVLGS LV36 COVLGD LV37 COVLGB LV38 VBS LXI VGS LX2 VDS LX3 CDO LX4 CBSO LX5 CBDO LX6 GMO LX7 Element Template Listings Description VG drive only valid for LEVELs 1 2 3 and 6 VFB effective Drain current tolerance not used in Star Hspice releases after 95 3 Source diode current tolerance Drain diode current tolerance Gate source overlap capacitance Gate drain overlap capacitance Gate bulk overlap capacitance Bulk source voltage VBS Gate source voltage VGS Drain source voltage VDS DC drain current CDO DC source bulk diode current CBSO DC drain bulk diode current CBDO DC gate transconductance GMO Star Hspice Quick Reference Guide 1533 Output Format Name GDSO GMBSO GBDO GBSO Alias LX8 LX9 LX10 LX11 Description DC drain source conductance GDSO DC substrate transconductance GMBSO Conductance of the drain diode GBDO Conductance of the source diode GBSO Meyer and Charge Conservation Model Parameters QB CQB QG CQG QD CQD CGGBO CGDBO CGSBO 15 34 LXI12 LX13 LX14 LX15 LX
39. scale Set number of panels Set the frequency of symbols Set Toggle ticks Monotonic Set Toggle for family of curves Set Toggle x or y grids Reinitialize all Setup menu values Accessible Menus From Setup G Bring up the Graph window N Bring up the Node window Q Exit the program Star Hspice Quick Reference Guide 153 Output Format Node Menu Prompts Panel Each panel prompts for one x axis parameter and any number of y axis curves X axis Any node may be chosen as the x axis for a panel Y axis Any listed node name or function or algebraic expression can be entered at the y axis prompt Node Menu Commands P Remove all curves in present panel A Remove all curves from all panels Q Exit the program MORE Display next previous page of nodes BACK These commands appear only when the node list spans more than one page s Bring up the Setup menu AC Analysis R Draw the Real component of the data I Draw the Imaginary component of the data M Calculate and draw the Magnitude p Calculate and draw the Phase 15 4 Star Hspice Quick Reference Guide Print Commands Graph Commands A D Add or Delete curves or expressions X Y Change the view on some panels or all panels Q Exit the program Accessible Menus from Graph Menu N Bring up the Node window P Bring up the Print menu S Bring up the Setup menu Print Menu The Print menu lists printers and or plotters at your site on
40. sharing reverse short channel effect RSCE Modeling of substrate current due to impact ionization Quasi static charge based dynamic model Thermal and flicker noise modeling First order NQS model for the transadmittances Short distance geometry and bias dependent device matching See Single Equation Model in the True Hspice Device Models Reference Manual Coherence of Static and Dynamic Models All aspects regarding the static the quasi static and NQS dynamic and noise models are derived from the normalized transconductance to current ratio Symmetric normalized forward and reverse currents are used throughout these expressions For quasi static dynamic operation both a charge based model for the node charges and trans capacitances and a simpler capacitances model are available The dynamic model including the time constant for the NQS model is described in symmetrical terms of the forward and reverse normalized currents The charge formulation is further used to express effective mobility dependence of local field See Coherence of Static and Dynamic Models in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 10 21 MOSFET Models LEVEL 57 UC Berkeley BSIM3 SOI Model General Form Mxxx nd ng ns ne lt np gt lt nb gt lt nT gt mname lt L val gt lt W val gt lt M val gt lt AD val gt lt AS val gt lt PD val gt lt PS val gt NRD val lt NRS va
41. the collector VGJ V 1 15 Bandgap voltage recombination emitter base junction DVGTE V 0 05 Bandgap voltage difference of emitter stored charge Noise Parameters Level 504 Parameters Unit Default Description AF 2 0 Exponent of the flicker noise KF 2 0e 11 Flicker noise coefficient of the ideal base current 2 0e 11 Flicker noise coefficient of the non ideal base current Star Hspice Quick Reference Guide 7 27 BUT Element Substrate Parameters Level 504 Parameters Unit Default Description ISS A 4 8e 17 Base substrate saturation current IKS A 2 5e 4 Base substrate high injection knee current CJS F 3 15 Zero bias collector 13 substrate depletion capacitance VDS V 0 62 Collector substrate diffusion voltage PS 0 34 Collector substrate grading coefficient VGS V 1 2 Bandgap voltage of the substrate AS 1 58 For a closed buried layer AS AC For an open buried layer AS AEPI 7 28 Star Hspice Quick Reference Guide LEVEL 8 HiCUM Model Self Heating Parameters Level 504 Parameters Unit Default Description RTH C W 0 Thermal resistance CTH J C 0 Thermal capacitance LEVEL 8 HiCUM Model See LEVEL 8 HiCUM Model in the True Hspice Device Models Reference Manual Model Parameters Parameter Unit Default Description LEVEL 8 HiCUM BJT LEVEL in Hspice TREF C 26 85 Temperature in simulation See Model Parameters in the True Hspice Device Models Re
42. v2 t3 v3 lt lt repeat gt gt lt TD delay gt lt gt See Piecewise Linear PWL Source Function in the Star Hspice User Guide MSINC and ASPEC General Form Ixxx n n PL vl tl v2 t2 v3 t3 gt lt R lt repeat gt gt lt TD delay gt lt gt Data Driven Piecewise Linear Source Function General Form Vxxx n n PWL TIME PV along with DATA dataname TIME PV tl vl t2 v2 t3 v3 t4 v4 ENDDATA TRAN DATA datanam Or Ixxx n n PWL TIME PV See Data Driven Piecewise Linear Source in the Star Hspice Manual 3 12 Star Hspice Quick Reference Guide Independent Sources Single Frequency FM Source Function General Form Vxxx n n SFFM lt gt vo va fc mdi lt fs gt gt gt lt gt Or Ixxx n n SFFM vo va fc mdi lt fs gt gt gt lt gt See Single Frequency FM Source Function in the Star Hspice Manual Amplitude Modulation Source Function General Form Vxxx n n AM lt gt so sa fm fc lt td gt lt gt Or Ixxx n n AM lt gt so sa fm fc lt td gt lt gt See Amplitude Modulation Source Function in the Star Hspice Manual AM Keyword for an amplitude modulated time varying source EXP Keyword for a exponential time varying source Carrier frequency in Hz fm Modulation frequency in hertz freq Source frequency in Hz Default 1 TSTOP fs Signal frequency in Hz j Phase delay in units of degrees mdi M
43. val gt lt TC2 val gt x1 y1 x2 y2 x100 y100 lt IC val gt lt SMOOTH val gt Or Gxxx n n lt VCCS gt NPWL 1 in lt DELTA val gt lt SCALE val gt lt M val gt lt TCl val gt lt TC2 val gt x1 y1 x2 y2 x100 y100 lt IC val gt lt SMOOTH val gt Or Gxxx n n VCCS PPWL 1 in in DELTA val lt SCALE val gt lt M val gt lt TCl val gt lt TC2 val gt xl yl x2 y2 x100 y100 lt IC val gt lt SMOOTH val gt Star Hspice Quick Reference Guide 11 35 Behavior Macromodeling Multi Input Gates General Form n n VCCS gatetype k inl inl ink ink lt DELTA val gt lt TCl val gt lt TC2 val gt lt SCALE val gt lt M val gt xl yl x100 y100 lt IC val gt Delay Element General Form Gxxx n n lt VCCS gt DELAY in in TD val lt SCALE val gt lt TCl val gt lt TC2 val gt NPDELA Y val See Voltage Controlled Current Source VCCS in the Star Hspice User Guide Behavioral Current Source General Form n n CUR equation lt MAX gt val gt lt MIN val gt See Behavioral Current Source in the Star Hspice Manual Voltage Controlled Resistor VCR Linear General Form Gxxx n n VCR in transfactor MAX val lt MIN val gt lt SCALE val gt M val lt TCl val gt lt TC2 val gt lt IC val gt 11 4 Star Hspice Quick Reference Guide Voltage and Current Controlled Elements Polyn
44. values at corresponding timepoint Voltage or current RMS amplitude in volts or amps Voltage or current offset in volts or amps Independent voltage source Passive Devices and Independent Sources 3 16 Star Hspice Quick Reference Guide 1724 Chapter 4 Transmission Lines Star Hspice supports the T Element U Element and W Element for transmission lines Avant encourages users to use the W Element however for all transmission line needs The topic covered in this chapter is W Element Statement For detailed information about the W Element see W Element Statement in the Star Hspice Manual W Element Statement The general syntax for including a lossy W Element transmission line element in a Star Hspice netlist is RLGC file Wxxx inl lt in2 lt inx gt gt refin out out2 form outx refout lt RLGCfile fname gt N val L val U model form Wxxx inl lt in2 lt inx gt gt refin out lt out2 lt outx gt gt refout lt Umodel mname gt N val L val Field Solver inl lt in2 lt inx gt gt refin out lt out2 Jorm lt outx gt gt refout lt FSmodel mname gt N val L val Star Hspice Quick Reference Guide 4 1 Transmission Lines where the number of ports on a single transmission line are not limited One input and output port the ground references a model or file reference a number of conductors and a length are all required
45. 1 552e1 6 0 0 0 0 1 0 2 0 Star Hspice Quick Reference Guide JFET Model Parameters Description Drain voltage induced threshold voltage lowering coefficient Channel length modulation parameter Threshold voltage sensitivity to bulk node Effective dopant concentration in the channel Drain subthreshold factor Gate subthreshold factor Saturation factor Drain voltage exponent Critical field for mobility degradation Gate diode built in voltage Gate voltage exponent Dinch off voltage default is calculated JFET and MESFET Elements See DC Model LEVEL 3 Parameters in the True Hspice Device Models Reference Manual TOM Model Parameters Name Alias Unit Default Description BETATCE Temperature coefficient for BETA DELTA IDS feedback parameter CAPDS Drain to source capacitance See TOM Model Parameters in the True Hspice Device Models Reference Manual Noise Parameters Name Alias Unit Default Description AF 1 0 Flicker noise exponent KF 0 0 Flicker noise coefficient GDSNOI 1 0 Channel noise coefficient NLEV 2 0 Noise equation selector See Noise Parameters in the True Hspice Device Models Reference Manual 8 10 Star Hspice Quick Reference Guide JFET Model Parameters JFET MESFET Level 7 TOM 3 Model TOM3 TriQuint s Own Model III is available as JFET MESFET Level 7 in Star Hspice and is developed by TriQuint to improve the acc
46. 16 LX17 LX18 LX19 LX20 Bulk charge QB Bulk charge current CQB Gate charge QG Gate charge current CQG Channel charge QD Channel charge current CQD CGGBO 0Qg 0Vgb CG S CGD CGB CGDBO 0Qg oVdb for Meyer CGD CGDBO CGSBO 0Qg 0Vsb for Meyer CGS CGSBO Star Hspice Quick Reference Guide Alias CBGBO 1 21 CBDBO LX22 CBSBO LX23 QBD LX24 _ LX25 QBS LX26 _ LX27 CAP_BS LX28 CAP_BD LX29 CQS LX31 CDGBO LX32 CDDBO LX33 CDSBO LX34 Element Template Listings Description CBGBO 0Qbl0Vgb for Meyer CGB CBGBO CBDBO dQb dVdb CBSBO 0QblaVsb Drain bulk charge QBD Drain bulk charge current CQBD not used in Star Hspice releases after 95 3 Source bulk charge QBS Source bulk charge current CQBS not used in Star Hspice releases after 95 3 Bulk source capacitance Bulk drain capacitance Channel charge current CQS CDGBO dQd dVgb CDDBO dQd dVdb CDSBO 0Qd 0Vsb Star Hspice Quick Reference Guide 15335 Output Format Saturable Core Element Name Alias Description MU LXO Dynamic permeability mu Weber amp turn meter H LXI Magnetizing force H Ampere turns meter B LX2 Magnetic flux density B Webers meter Saturable Core Winding Name Alias Description LEFF 1 Effective winding inductance Henry 1 LV2 Initial condition FLUX LXO Flux through winding Weber turn VOLT LXI Voltage across winding Volt 1
47. 453e 4 le 7 Description Capacitance model selector Oxide capacitance Represents the Oxide thickness calculated from COX when COX is input See Using Basic Gate Capacitance Parameters in the True Hspice Device Models Reference Manual Gate Overlap Capacitance Model Parameters Name Alias Unit CGBO F m CGB CGDO F m CGD C2 9 10 Default 0 0 0 0 Description Gate bulk overlap capacitance per meter channel length Gate drain overlap capacitance per meter channel width Star Hspice Quick Reference Guide Name Alias Unit Default CGSO F m 0 0 CGS C1 LD LATD m DLAT METO m 0 0 WD m 0 0 MOSFET Element Statement Description Gate source overlap capacitance per meter channel width Lateral diffusion into channel from source and drain diffusion Fringing field factor for gate to source and gate to drain overlap capacitance calculation Lateral diffusion into channel from bulk along width See Using Gate Overlap Capacitance Model Parameters in the True Hspice Device Models Reference Manual Meyer Capacitance Parameters CAPOP 0 1 2 Name Alias Unit Default CFI V 0 0 CF2 V 0 1 Star Hspice Quick Reference Guide Description Transition of cgs from depletion to weak inversion for CGSO Transition of cgs from weak to strong inversion region MOSFET Introduction Name Alias Unit CF3 CF4 CF5 CF6 CGBEX Default 1 0 50 0 0
48. 5 36 Star Hspice Quick Reference Guide
49. 667 500 0 0 5 Description Transition of cgs and ced from saturation to linear region as a function of vds Contour of cgb and cgs smoothing factors Capacitance multiplier for cgs in saturation region Contour of cgd smoothing factor Cgb exponent See Using Meyer Capacitance Parameters CAPOP 0 1 2 in the True Hspice Device Models Reference Manual Gate Capacitances Simpson Integration CAPOP 3 The CAPOP 3 model is the same set of equations and parameters as the CAPOP 2 model The charges are obtained by Simpson numeric integration instead of the box integration found in CAPOP models 1 2 and 6 For detailed information see Defining CAPOP 3 Gate Capacitances Simpson Integration in the True Hspice Device Models Reference Manual 9 12 Star Hspice Quick Reference Guide MOSFET Element Statement Charge Conservation Parameters CAPOP 4 Name Alias Unit XQC Default 0 5 Description Coefficient of channel charge share attributed to drain See Using Charge Conservation Parameters CAPOP 4 in the True Hspice Device Models Reference Manual Gate Capacitance CAPOP 5 Use CAPOP S for no capacitors and HSPICE will not calculate gate capacitance For detailed information see Defining CAPOP 5 Gate Capacitance in the True Hspice Device Models Reference Manual Noise Parameters Name Alias Unit AF KF GDSNOI NLEV Default 1 0 0 0 1 0
50. A model for pocket implanted devices in Vth bulk charge effect model and Rout Asymmetrical and bias dependent source drain resistance Select either internal or external to the intrinsic MOSFET Acceptance of either the electrical or physical gate oxide thickness as the model input at the user s choice The quantum mechanical charge layer thickness model for both IV and CV A mobility model for predictive modeling A gate induced drain leakage GIDL current model 10 14 Star Hspice Quick Reference Guide LEVEL 54 BSIM 4 0 Model An unified flicker 1 f noise model which is smooth over all bias regions and considers the bulk charge effect drain junctions Different diode IV and CV characteristics for source and Junction diode breakdown with or without current limiting Dielectric constant of a gate dielectric as a model parameter For more information about this model see LEVEL 54 BSIM4 0 Model in the True Hspice Device Models Reference Manual BSIM4 MOSFET Level 54 Template Output Name Alias L LV1 w LV2 AD LV3 AS LV4 ICVDS LV5 ICVGS LV6 ICVBS LV7 VTH LV9 VDSAT LV10 PD LV11 PS LV12 RDS LV13 RSS LV14 Star Hspice Quick Reference Guide Description Channel length L Channel width W Area of the drain diode AD Area of the source diode AS Initial condition for drain source voltage VDS Initial condition for gate source voltage VGS Initial condition for bulk source voltag
51. AS NRD NRS NRB PDJ PSJ RTH and CTH must be specified per gate finger The initial condition IC is in the order drain voltage Vds front gate voltage Vgfs and back gate voltage Vbgs The model line must include LEVEL 58 and NFDMOD 0 for FD or NFDMOD 1 for NFD devices Specifying VFBF turns off the narrow width effect defined by NQFSW positive or negative and the reverse short channel effect defined by LRSCE and NBH or NHALO the latter effect is also turned off when WKF is specified For floating body devices set CGFBO 0 JRO and SEFF influence the gain of the BJT but LDIFF affects only bipolar charge storage in the source drain The BJT gain is influenced by NBH and NHALO if THALO is specified as well The non local impact ionization model is physical and its parameters should not be varied arbitrarily The LDD option intensifies the model set LLDD 0 for large scale circuit simulation and add the unbiased LDD resistance to RD This simplification will stop if NLDD gt 1 19 Star Hspice Quick Reference Guide 10 33 MOSFET Models LEVEL 59 UC Berkeley BSIM3 SOI FD Model General Form Mxxx nd ng ns ne np mname lt L val gt AD AS BJTOFF CTHO IC L mname Mxxx nd ne ng np 10 34 Wzval lt M val gt lt AD val gt lt AS val gt lt PD val gt lt PS val gt lt NRD val gt lt NRS val gt lt NRB val gt RTHO0 val CTHO val off lt BJToff val gt
52. CCAP VCCS Description Voltage to resistance conversion factor Keyword for voltage controlled capacitance element Keyword for voltage controlled current source See E Element Parameters in the Star Hspice Manual E Elements Voltage Controlled Voltage Source VCVS Linear General Form Exxx n n lt VCVS gt in in gain Polynomial lt MAX val gt lt MIN val gt lt SCALE val gt lt TCl val gt lt TC2 val gt lt ABS 1 gt lt IC val gt General Form Exxx n n VCVS POLY ndim inl 11 8 inl inndim inndim lt TCl val gt lt TC2 val gt SCALE val lt MAX val gt MIN val lt ABS 1 gt p0 pl lt IC vals gt Star Hspice Quick Reference Guide Voltage and Current Controlled Elements Piecewise Linear General Form Exxx n n lt VCVS gt PWL 1 in in DELTA val lt SCALE val gt lt TCl val gt lt TC2 val gt x1 y1 x2 y2 x100 y100 lt IC val gt Multi Input Gates General Form Exxx n n lt VCVS gt gatetype k 1 inl inj inj lt DELTA val gt lt TCl val gt lt TC2 val gt SCALE val x1 y1 x100 y100 lt IC val gt Delay Element General Form Exxx n n lt VCVS gt DELAY in in TD val lt SCALE val gt TCI val lt TC2 val gt lt NPDELAY val gt See Voltage Controlled Voltage Source in the Star Hspice Manual Behavioral Voltage Source General Form Exxx n n VOL equa
53. CVS gt vnl transresistance MAX val lt MIN val gt lt SCALE val gt lt TCl val gt lt TC2 val gt lt ABS 1 gt lt IC val gt Polynomial General Form n n CCVS POLY ndim vnl lt vnndim lt MAX val gt MIN val gt lt TCl val gt lt TC2 val gt lt SCALE val gt lt ABS 1 gt p0 pl lt IC vals gt Piecewise Linear General Form Hxxx n n CCVS PWL 1 vnl DELTA val lt SCALE val gt lt TCl val gt lt TC2 val gt 1 1 x100 y100 lt IC val gt Multi Input Gates General Form Hxxx n n gatetype k vnl vnk lt DELTA val gt lt SCALE val gt lt TCl val gt lt TC2 val gt 1 1 x100 y100 lt IC val gt Star Hspice Quick Reference Guide 11 15 Delay Element Behavior Macromodeling General Form Hxxx n n lt CCVS gt DELAY vnl TD val lt SCALE val gt lt TCl val gt lt TC2 val gt lt NPDELA Y val gt See Current Controlled Voltage Source CCVS in the Star Hspice Manual H Element Parameters Parameter ABS CCVS DELAY DELTA gatetype k Hxxx IC MAX MIN n 11 16 Description Output is absolute value if ABS 1 Keyword for current controlled voltage source Keyword for the delay element Used to control the curvature of the piecewise linear corners May be AND NAND OR or NOR Current controlled voltage source element name Initial condition Maximum voltage value Minim
54. ECT gt Suppresses the printout of the text from the list file lt UNPROTECT gt Restores output printback ALTER Sequence for inline case analysis PARAMETER Defines a parameter END Terminates any ALTERs and the simulation Star Hspice Quick Reference Guide 1 5 Introduction Numeric Scale Factors A number may be an integer a floating point number an integer or floating point number followed by an integer exponent or an integer or floating point number followed by one of the scale factors listed below A le 18 F le 15 P le 12 N 1 9 U le 6 M le 3 K 1 3 or X 1 25 4 6 G 1 9 Algebraic Expressions In addition to simple arithmetic operations the following quoted string functions may be used sin x sinh x abs x cos x cosh x min x y tan x tanh x max x y atan x sqrt x exp x db x log x log10 x pwr x y pow x y instead of x y 1 6 Star Hspice Quick Reference Guide Input and Output Files Algebraic Expressions as Input General Form algebraic expression Either single or double quotes may be used Algebraic Expressions as Output General Form PAR algebraic expression The left and right parentheses are mandatory Equation Constants Vacuum permittivity 8 854e 12 F m o ox 3 453143e 11 F m esi 1 0359e 10 F m dielectric constant of silicon f Frequency k 1 38062e 23 Boltzmann s constant q
55. EVEL 1 and 3 Name Alias Unit Default Description AF 1 0 Flicker noise exponent KF 0 0 Flicker noise coefficient See Setting Noise Parameters for LEVEL 1 and 3 in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Temperature Effects See Determining Temperature Effects on Junction Diodes in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 6 7 Diodes Temperature Effect Parameters LEVEL 1 and 3 Name Alias Unit CTA CTC 1 CTP 1 EG eV 2 TCV 1 TLEV 6 8 Default 0 0 0 0 7 02e 4 1108 0 0 0 0 Description Temperature coefficient for area junction capacitance CJ Temperature coefficient for periphery junction capacitance Energy gap for pn junction diode First bandgap correction factor From Sze alpha term Second bandgap correction factor From Sze beta term Breakdown voltage temperature coefficient Temperature equation LEVEL selector for diode interacts with TLEVC Star Hspice Quick Reference Guide Name Alias Unit TLEVC TMI 1 TM2 1 2 TPB TVJ vy TPHP TRS 1 TIT1 1 TTT2 1 2 Default 0 0 0 0 0 0 0 0 0 0 25 0 0 0 0 0 Star Hspice Quick Reference Guide Temperature Effects Description LEVEL selector for diode temperature junction capacitances and c
56. Form AC dec 10 100 10meg SWEEP MONTE val TRAN Sweep General Form TRAN 1n 10n SWEEP MONTE val PARAM Distribution Function Syntax General Form PARAM xx UNIF nominal val rel variation lt multiplier Or PARAM xx AUNIF nominal val abs variation lt multiplier gt Or PARAM xx GAUSS nominal val rel variation sigma lt multiplier gt Or PARAM xx AGAUSS nominal val abs variation sigma lt multiplier gt 13 18 Star Hspice Quick Reference Guide abs_variation AGAUSS AUNIF GAUSS LIMIT multiplier nominal_val rel_variation sigma UNIF XX Worst Case Analysis PARAM xx LIMIT nominal val abs variation The AUNIF and AGAUSS vary the nominal val by abs variation Gaussian distribution function using absolute variation Uniform distribution function using absolute variation Gaussian distribution function using relative variation Random limit distribution function using absolute variation If not specified the default is 1 Nominal value for Monte Carlo analysis and default value for all other analyses The UNIF and GAUSS vary the nominal val by nominal val rel variation The abs variation or rel variation is specified at the sigma LEVEL Uniform distribution function using relative variation The parameter whose value is calculated by distribution function Star Hspice Quick Reference Guide 18 19 Analyzing Data
57. HUNT but is used only with option CONVERGE Used in conjunction with the DCHOLD option and the NODESET statement to enhance the DC convergence properties of a simulation DCFOR and DCHOLD are used together for the initialization process of a DC analysis In the case of convergence problems Star Hspice automatically sets DCON 1 12 13 Controlling Input Option DCSTEP x DCTRAN DV x x GMINDC x GRAMP x GSHUNT ICSWEEP 12 14 Description Used to convert DC model and element capacitors to a conductance to enhance DC convergence properties DCTRAN is an alias for CONVERGE See CONVERGE The maximum iteration to iteration voltage change for all circuit nodes in both DC and transient analysis The conductance in parallel with the current source used for IC and NODESET initialization conditions circuitry A conductance that is placed in parallel with all pn junctions and all MOSFET nodes for DC analysis Value is set by Star Hspice during the autoconvergence procedure Conductance added from each node to ground For a parameter or temperature sweep saves the results of the current analysis for use as the starting point in the next analysis in the sweep Star Hspice Quick Reference Guide Model Analysis Options Option Description ITLPTRAN Controls the iteration limit used in the final try of the pseudo transient method in OP or DC analysis NEWTOL Calcula
58. L2 x NOPIV PIVOT x PIVREF PIVREL x PIVTOL x SPARSE x 12 12 Description Sets the relative drain to source current error tolerance percent from iteration to iteration to determine convergence for currents in MOSFET devices Sets the relative error tolerance for voltages Sets the relative error tolerance for voltages Sets the maximum DC iteration limit Sets the DC transfer curve iteration limit Prevents Star Hspice from switching automatically to pivoting matrix factorization when a nodal conductance is less than PIVTOL NOPIV inhibits pivoting Also see PIVOT Provides different pivoting algorithm selections Pivot reference Sets the maximum minimum row matrix ratio Sets the absolute minimum value for which a matrix entry is accepted as a pivot Same as PIVOT Star Hspice Quick Reference Guide Option CAPTAB DCCAP VFLOOR x CONVERGE CSHDC DCFOR x DCHOLD x DCON X Star Hspice Quick Reference Guide Model Analysis Options Description Prints table of single plate nodal capacitance for diodes BJTs MOSFETs JFETs and passive capacitors at each operating point Used to generate C V plots and to print out the capacitance values of a circuit both model and element during a DC analysis Sets a lower limit for the voltages that are printed in the output listing Invokes different methods for solving nonconvergence problems The same option as CS
59. LVTO V GAMMA v1 2 NGATE l cm NSS 1 cm NSUB 1 cm DNB NB PHI V 9 8 Default 0 0 0 527625 1 0 1 15 0 576036 Description Zero bias threshold voltage shift Body effect factor Polysilicon gate doping used for analytical model only Surface state density Substrate doping Surface potential Star Hspice Quick Reference Guide MOSFET Element Statement Name Alias Unit Default Description TPG TPS 1 0 Type of gate material used for analytical model only VTO VT V Zero bias threshold voltage See Common Threshold Voltage Parameters in the True Hspice Device Models Reference Manual Impact lonization Model Parameters Name Alias Unit Default Description ALPHA 0 0 Impact ionization current coefficient LALPHA 0 0 ALPHA length sensitivity WALPHA um V 0 0 ALPHA width sensitivity VCR 0 0 Critical voltage LVCR um V 0 0 VCR length sensitivity WVCR um V 0 0 VCR width sensitivity IIRAT 0 0 Portion of impact ionization current that goes to source See Using Impact Ionization Model Parameters in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 9 9 MOSFET Introduction Gate Capacitance Model Parameters See Using MOS Gate Capacitance Model Parameters in the True Hspice Device Models Reference Manual Basic Gate Capacitance Parameters Name Alias Unit CAPOP F m m Default 2 0 3
60. MOS Model 11 Level 1101 is an updated version of Level 1100 It uses the same basic equations as Level 1100 but uses different geometry scaling rules It includes two types of geometrical scaling rules physical rules and binning rules To select these scaling rules use the Version parameter 1100 11010 or 11011 Also for the parasitic diode model the Philips JUNCAP Parasitic Diode Model was added For additional information regarding the MOS Model 11 and the Philips JUNCAP Parasitic Diode Model see http www semiconductors philips com Philips_Models Using the Philips MOS11 Model in Star Hspice 1 Set Level 63 to identify the Philips MOS Model 11 2 Set the MOSII version Set Version 1100 to identify the model as Philips MOS Model 11 Level 1100 Set Version 11010 to identify the model as Philips MOS Model 11 Level 1101 physical geometry scaling rules Set Version 11011 to identify the model as Philips MOS Model 11 Level 1101 binning geometry scaling rules Star Hspice Quick Reference Guide 10 45 MOSFET Models 3 The default room temperature is 25 in Star Hspice but is 27 in most other simulators When comparing to other simulators set the simulation temperature to 27 using TEMP 27 or OPTIONS TNOM 27 4 The model parameter set should always include the model reference temperature TR which corresponds to TREF in other levels in Star Hspice The default for TR is 21 0 to match the Philip
61. MOSFET Models nd ng ns nb mname L w AD AS PD PS RGATEMOD RBODYMOD TRNQSMOD ACNQSMOD GEOMOD RGEOMOD NRS 10 12 Drain terminal node name Gate terminal node name Source terminal node name Bulk terminal node name MOSFET model name reference BSIM4 MOSFET channel length in meters BSIM4 channel width in meters Drain diffusion area Source diffusion area Perimeter of the drain junction if PERMOD O0 excludes the gate edge otherwise includes the gate edge Perimeter of the source junction if PERMOD 0 excludes the gate edge otherwise includes the gate edge Gate resistance model selector Substrate resistance network model selector Transient NQS model selector AC small signal NQS model selector Geometry dependent parasitics model selector specifies how the end S D diffusions are connected Source drain diffusion resistance and contact model selector specifies the end S D contact type point wide or merged and how S D parasitics resistance is computed Number of source diffusion squares Star Hspice Quick Reference Guide NRD RBPB RBPD RBPS RBDB NE MIN RDC RSC DELVTO DELVTO MULUO DELKI DELNFCT OFF IC LEVEL 54 BSIM 4 0 Model Number of drain diffusion squares Resistance connected between bNodePrime and bNode Resistance connected between bNodePrime and dbNode Resistance connected between bNodePrime and sbNode Resistance connected b
62. Models LEVEL 55 EPFL EKV MOSFET Model The EPFL EKV MOSFET model is a scalable and compact simulation model built on fundamental physical properties of the MOS structure LEVEL 55 uses the general model statement described in MOSFET Model Statement on page 9 3 This model is for the design and simulation of low voltage low current analog and mixed analog digital circuits using submicron CMOS technologies For more information about this model see LEVEL 55 EPFL EKV MOSFET Model in the True Hspice Device Models Reference Manual Single Equation Model The EPFL EKV MOSFET model is formulated as a single expression which preserves continuity of first and higher order derivatives with respect to any terminal voltage in the entire range of validity of the model The analytical expressions of first order derivatives as transconductances and transcapacitances are available for computer simulation LEVEL 55 includes modeling of these physical effects Basic geometrical and process related aspects as oxide thickness junction depth effective channel length and width Effects of doping profile substrate effect Modeling of weak moderate and strong inversion behavior Modeling of mobility effects due to vertical and lateral fields velocity saturation 10 20 Star Hspice Quick Reference Guide LEVEL 55 EPFL EKV MOSFET Model Short channel effects as channel length modulation CLM source and drain charge
63. NCAP Diode Model Length of the side wall of the diffusion area AB which is not under the gate In the model card it is used by LS Length of the side wall of the diffusion area AB which is under the gate In the model card it is used by LG Sets initial condition to OFF for this element in DC analysis The default is ON Multiplier to simulate multiple diodes in parallel All currents capacitances and resistances are affected by setting M Default 1 Initial voltage across the diode element This value is used when the UIC option is present in the tran statement and is overridden by the ic statement The difference between the element temperature and circuit temperature in celsius Default 0 0 Prints the updated temperature parameters for juncap diode model 6 13 Diodes Juncap Model Statement General Form MODEL modelname D level 4 lt keyword val gt modelname D LEVEL keyword Model name Identifies a diode model Identifies a diode model LEVEL 4 JUNCAP Diode Model Model parameter keyword such as JSGBR or JSDBR See Using the Juncap Model in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Juncap Model Parameters Name Alias Unit Default Description AB le 12 Diffusion area LS M 0 0 Length of side wall of diffusion area AB which is not under gate Default deviates from Philips JUNCAP 1 0e 6 Star Hspice Quick Reference Guide Name Alias U
64. NTOL See VNTOL Selects a time algorithm that uses LVLTIM 3 and DVDT 2 for circuits such as high gain comparators Star Hspice Quick Reference Guide Option ACOUT CHGTOL x CSHUNT Di x GMIN x GSHUNT MAXAMP x RELH x RELI x Star Hspice Quick Reference Guide 12 17 Model Analysis Options Description AC output calculation method for the difference in values of magnitude phase and decibels for prints and plots Sets the charge error tolerance when LVLTIM 2 is set Capacitance added from each node to ground Sets the maximum iteration to iteration current change through voltage defined branches voltage sources and inductors Sets the minimum conductance allowed for in a transient analysis time sweep Conductance added from each node to ground Sets the maximum current through voltage defined branches voltage sources and inductors Sets relative current tolerance through voltage defined branches voltage sources and inductors Sets the relative error tolerance change from iteration to iteration to determine convergence for all currents in diode BJT and JFET devices Controlling Input Option RELQ x RELTOL RELV RISETIME TRTOL x VNTOL x ABSV AUTOSTOP BKPSIZ x BYPASS BYTOL x 12 18 Description Used in the local truncation error timestep algorithm LVLTIM 2 Sets the relative error tolerance for voltages Specifies the small
65. Reference Guide Independent Source Element Lzzz Name of the second of two coupled inductors MAG Initial magnetization of the saturable core magnetization mname Saturable core model name See Inductors in the Star Hspice Manual Magnetic Core Model General Form MODEL mname L lt pnamel vall gt CORE Identifies a Jiles Atherton Ferromagnetic Core model L Identifies a saturable core model LEVEL x Equation selection for Jiles Atherton model mname Model name pnamel vall Value of the model parameter See Magnetic Core Syntax in the True Hspice Device Models Reference Manual Independent Source Element General Form Vxxx n n lt lt DC gt dcval lt tranfun gt lt AC acmag lt acphase gt gt Or n n lt lt DC gt deval gt lt tranfun gt lt AC acmag lt acphase gt gt lt M val gt Star Hspice Quick Reference Guide 3 9 acphase DC deval lyyy M n n tranfun Vxxx Passive Devices and Independent Sources AC source keyword for use in AC small signal analysis Magnitude RMS of the AC source in volts Phase of the AC source in degrees DC source keyword and value in volts Independent current source element name Multiplier used for simulating multiple parallel current sources Positive node Negative node Transient source function one or more of AM DC EXP PE PL PU PULSE PWL SFFM SIN Independen
66. Star Hspice Quick Reference Guide Release 2002 2 June 2002 Star Hspice Quick Reference Guide Release 2002 2 June 2002 Previously printed December 2001 V2001 4 Copyright 2002 Avant Corporation and Avant subsidiary All rights reserved Unpublished rights reserved under the copyright laws of the United States Use of copyright notices is precautionary and does not imply publication or disclosure Disclaimer AVANT RESERVES THE RIGHT TO MAKE CHANGES TO ANY PRODUCTS HEREIN WITHOUT FURTHER NOTICE AVANT MAKES NO WARRANTY REPRESENTATION OR GUARANTEE REGARDING THE FITNESS OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE AND SPECIFICALLY DISCLAIMS ANY WARRANTY OF MERCHANTABILITY AND ANY WARRANTY OF NON INFRINGEMENT AVANT DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY INCLUDING WITHOUT LIMITATION SPECIAL INCIDENTAL OR CONSEQUENTIAL DAMAGES AVANT S LIABILITY ARISING OUT OF THE MANUFACTURE SALE OR SUPPLYING OF THE PRODUCTS OR THEIR USE OR DISPOSITION WHETHER BASED UPON WARRANTY CONTRACT TORT OR OTHERWISE SHALL NOT EXCEED THE ACTUAL LICENSE FEE PAID BY CUSTOMER Proprietary Rights Notice This document contains information of a proprietary nature No part of this manual may be copied or distributed without the prior written consent of Avant corporation This document and the software described herein is only provided under a written licens
67. The arguments are defined as Wxxx inx refin outx refout RLGCfile f name N U model mname FS model mname 4 2 Lossy W Element transmission line element name Signal input node for the x transmission line inl is required Ground reference for input signal Signal output node for the x transmission line each input port must have a corresponding output port Ground reference for output signal File name reference for file containing the RLGC information for the transmission lines Number of conductors excluding the reference conductor Physical length of the transmission line in units of meters U model lossy transmission line model reference name Internal field solver model name Star Hspice Quick Reference Guide 724 Chapter 5 IBIS Conventions The topics covered in this chapter are Buffer Element Buffers Differential Pins Scaling Buffer Strength For detailed information about IBIS conventions see Understanding IBIS Conventions in the True Hspice Device Models Reference Manual Buffer Element The general syntax of an element card for I O buffers is General Form bname node 1 node 2 node keyword 1 value 1 or keyword Mzvalue M bname Buffer element name keyword Assigns value value i to the keyword value i keyword i Optional keywords are given in square brackets Star Hspice Quick Reference Guide 5 1 IBIS
68. The topics covered in this chapter are Syntax Notation Common Abbreviations Input and Output Files Syntax Notation XXX yyy zzz Arbitrary alphanumeric strings lt gt Optional data fields are enclosed in angle brackets lt gt All other symbols and punctuation are required UPPERCASE Keywords parameter names etc are represented in uppercase Star Hspice Quick Reference Guide 1 1 Introduction lowercase Variables should be replaced with a numeric or symbolic value Any number of parameters of the form shown can be entered Continuation of the preceding line Note The meaning of a parameter may depend on its location in the statement Be sure that a complete set of parameters is entered in the correct sequence before running the simulation Common Abbreviations A amp cm deg B WH m lt Angstrom ampere centimeter degree Centigrade unless specified as Kelvin electron volt farad Henry meter second volt Star Hspice Quick Reference Guide Input and Output Files Input and Output Files General Form lust george mydesign sp lusr george The design path mydesign The design name mydesign The design root trO The suffix File Name Suffix Note X increments for each TEMP or ALTER If X lt 36 X is one of the characters 0 9 A Z If X is gt 36 use OPTION ALT999 or ALT9999 as described in the Star Hspice User Guide Input input
69. True Hspice Device Models Reference Manual This section describes parameters for LEVEL 503 only See the following section free fell 6 Philips Bipolar Model MEXTRAM LEVEL 504 parameters Star Hspice Quick Reference Guide 7 11 BUT Element Flags Level 503 Parameters Unit Default EXAVL 0 EXMOD 0 EXPHI 1 Basic Parameters Level 503 Parameters Unit Default TREF oc 0 0 IS A 5 E 17 BF A 140 0 XIBI 0 0 IBF A 2 0E 14 7 12 Description Flag for extended modeling of avalanche currents Flag for extended modeling of the reverse current gain Flag for distributed high frequency effects Description Model nominal temperature Collector emitter saturation current Ideal forward current gain Fraction of ideal base current that belongs to the sidewall Saturation current of the non ideal forward base current Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model Parameters Unit Default VLF V 0 5 IK A 15 E 3 BRI 16 0 IBR A 8 0e 15 VLR V 0 5 XEXT 0 5 QBO C 1 2e 12 ETA 4 0 AVL 50 Star Hspice Quick Reference Guide Description Cross over voltage of the non ideal forward base current High injection knee current Ideal reverse current gain Saturation current of the non ideal reverse base current Cross over voltage of the non ideal reverse base current Part of I EX Q EX Q TEX and I SUB that depends on the base collector voltage VBCI Ba
70. UB XCJC CDIS Unit V V V Default 0 5 0 33 0 33 0 5 0 75 0 75 0 75 1 0 Definition Coefficient for forward bias depletion capacitance Base collector junction exponent grading factor Base emitter junction exponent grading factor Substrate junction exponent grading factor Base collector built in potential Base emitter built in potential Substrate junction built in potential Internal base fraction of base collector depletion capacitance See Using Junction Capacitor Parameters in the True Hspice Device Models Reference Manual 7 8 Star Hspice Quick Reference Guide BJT Model Parameters Parasitic Capacitances Parameters Name Alias Unit Default CBCP F 0 0 CBEP F 0 0 CCSP F 0 0 Definition External base collector constant capacitance External base emitter constant capacitance External collector substrate constant capacitance vertical or base substrate lateral See Using Parasitic Capacitances Parameters in the True Hspice Device Models Reference Manual Transit Time Parameters Name Alias Unit Default ITF JTF amp 0 0 PTF 0 0 s 0 0 TR s 0 0 Star Hspice Quick Reference Guide Definition TF high current parameter Frequency multiplier to determine excess phase Base forward transit time Base reverse transit time BJT Element Name Alias Unit Default Definition VTF V 0 0 TF base collector voltage
71. X F 2 97e 15 Collector oxide capacitance FBC 0 1526 Partitioning factor for C BCX C C BCx Star Hspice Quick Reference Guide 7 37 BJT Element See BC Capacitance in the True Hspice Device Models Reference Manual BC Base Current Component Parameter Unit Default Description IBCXS A 4 39e 20 Saturation current MBCX 1 03 Non ideality factor See BC Base Current Component in the True Hspice Device Models Reference Manual Other External Elements Parameter Unit Default Description CEOX F 1 13e 15 Emitter base isolation overlap cap RBX Ohm 0 External base series resistance RE Ohm 0 Emitter series resistance RCX Ohm 0 External collector series resistance See Other External Elements in the True Hspice Device Models Reference Manual 7 38 Star Hspice Quick Reference Guide LEVEL 8 HiCUM Model Substrate Transistor Parameter Unit Default Description ITSS A 0 0 Transfer saturation current MSF 0 0 Non ideality factor forward transfer current TSF 0 0 Minority charge storage transit time ISCS A 0 0 Saturation current of CS diode MSC 0 0 Non ideality factor of CS diode See Substrate Transistor Parameters in the True Hspice Device Models Reference Manual Collector Substrate Depletion Capacitance Parameter Unit Default Description CJSO F 3 64e 14 Zero bias value of CS depletion cap VDS 0 6 Built in voltage ZS 0 447 Exponent coefficient VPTS 1000 Pu
72. able u ua ys inet reete 10 2 LEVEL 47 BSIM3 Version 2 MOS Model 10 6 LEVELs 49 and 53 BSIM3v3 MOS Models 10 9 LEVEL 50 Philips MOS9 Model 10 10 LEVEL 54 BSIM 4 0 Model 10 11 vi Star Hspice Quick Reference Guide LEVEL 55 EPFL EKV MOSFET 10 20 LEVEL 57 UC Berkeley BSIM3 SOI Model 10 22 LEVEL 58 University of Florida SOI Model 10 32 LEVEL 59 UC Berkeley BSIM3 SOI FD Model 10 34 LEVEL 60 UC Berkeley BSIM3 SOI DD Model 10 41 LEVEL 61 RPI a Si TFT Model 10 43 LEVEL 62 RPI Poli Si TFT Model 10 44 MOS Level 63 Philips MOS11 Model 2 10 45 Level 64 HiSIM1 0 10 47 Chapter 11 Behavior Macromodeling 11 1 Subcircuit Macros 11 1 Voltage and Current Controlled Elements 11 2 Chapter 12 Controlling Input 12 1 OPTIONS Statement sess 12 1 General Control Options x Model Analysis Options sese 12 9 SS tede tese c tree e eed 12 22 Chapter 13 Analyzing Data 13 1 DC Analysis 13 1 AC 1 13 5 Small Signal Network Analysis 13 9 Temperature Anal
73. acitance 7 24 Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model Transit Time Parameters Level 504 Parameters MTAU TAUE TAUB TEPI TAUR DEG XREC Unit EV Default 1 0 2 0e 12 4 2e 12 4 1 11 5 2 10 0 0 0 0 Star Hspice Quick Reference Guide Description Non ideality of the emitter stored charge Minimum transit time of stored emitter charge Transit time of stored base charge Transit time of stored epilayer charge Transit time of reverse extrinsic stored base charge Bandgap difference over the base Pre factor of the recombination part of Ib1 7 25 BUT Element Temperature Parameters Level 504 AQBO 0 3 Temperature coefficient of the zero bias base charge AE 0 0 Temperature coefficient of the resistivity of the emitter AB 1 0 Temperature coefficient of the resistivity of the base AEPI 2 5 Temperature coefficient of the resistivity of the epilayer AEX 0 62 Temperature coefficient of the resistivity of the extrinsic base AC 2 0 Temperature coefficient of the resistivity of the buried layer DVGBF V 5 0e 2 Bandgap voltage difference of forward current gain 7 26 Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model Temperature Parameters Level 504 CVGBR V 4 5e 2 Bandgap voltage difference of reverse current gain VGB V 1 17 Bandgap voltage of the base VGC V 1 18 Bandgap voltage of
74. al maximum reverse BETA Sets the bulk node to a global node name Reverse saturation current between base and collector Current explosion model parameter Reverse saturation current between base and emitter Transport saturation current Reverse saturation current bulk to collector or bulk to base Model selector Forward current emission coefficient Reverse current emission coefficient Star Hspice Quick Reference Guide Name Alias Unit Default NS 1 0 SUBS UPDATE 0 BUT Model Parameters Definition Substrate current emission coefficient Substrate connection selector Selects alternate base charge equation See Using BJT Basic DC Model Parameters in the True Hspice Device Models Reference Manual Low Current Beta Degradation Effect Parameters Name Alias Unit Default ISC C4 amp 0 0 JLC ISE C2 amp 0 0 JLE NC NLC 2 0 NE 1 5 Definition Base collector leakage saturation current Base emitter leakage saturation current Base collector leakage emission coefficient Base emitter leakage emission coefficient See Using Low Current Beta Degradation Effect Parameters in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide BUT Element Base Width Modulation Parameters Name Alias Unit Default Definition VAF VA V 0 0 Forward early voltage VBF VAR VB V 0 0 Reverse early voltage VRB BV See Using Base W
75. all statement to be deleted See DEL LIB Statement in the Star Hspice Manual Element Statements General Form elname nodel node2 nodeN gt mname pnamel vall pname2 val2 M val Or elname lt nodel node2 nodeN gt mname pname expression gt lt M val Or elname lt nodel node2 nodeN gt lt mname gt vall val2 valn gt 12 26 Star Hspice Quick Reference Guide elname expression M val mname nodel pnamel Star Hspice Quick Reference Guide 12 27 Statements IBIS buffer Capacitor Diode Dependent current and voltage sources moaw Prj Q Current source JFET or MESFET Mutual inductor Inductor MOSFET BJT Resistor IS Transmission line Voltage source Subcircuit call x lt FAAOZTAA Element name that cannot exceed 1023 characters and must begin with a specific letter for each element type Any mathematical expression containing values or parameters i e param val2 Element multiplier Model reference name is required for all elements except passive devices Node names are identifiers of the nodes to which the element is connected Element parameter name used to identify the parameter value that follows this name Controlling Input Value assigned to the parameter pnamel or to the corresponding model node See Element and Source Statements in the Star Hspice Man
76. alue See Output Buffer in the True Hspice Device Models Reference Manual Tristate Buffer Syntax B 3state pu nd pd nd out nd in nd en nd pc nd gc file file_name model model_name typz typlminlmaxlfastlslow power onloff buffer 4lthree_state Xv_pu state_pu xv_pd state_pd interpol 112 ramp fwf 0l1I2 ramp_rwf 01112 fwf tune fwf tune value rwf tune rwf tune value nowarn com pu c com pu value c com pd c com pd value tB GG Star Hspice Quick Reference Guide 5 3 IBIS Conventions c_com_pc c_com_pc_value c_com_gc c_com_gc_value See Tristate Buffer in the True Hspice Device Models Reference Manual Input Output Buffer Syntax B iond pd nd out nd in nd en V out of in nd pc nd gc file file_name model model_name typz typlminlmaxlfastlslow power onloff buffer 3linput_output xv_pu state_pu xv_pd state_pd interpol 1121 ramp fwfz 011I2 ramp_rwf 01112 fwf_tune fwf_tune_value rwf_tune rwf_tune_value nowarn c_com_pu c_com_pu_value c_com_pd c_com_pd_value c_com_pc c_com_pc_value c_com_gc c_com_gc_value See Input Output Buffer in the True Hspice Device Models Reference Manual Open Drain Open Sink Open Source Buffers All rules given in Output Buffer Syntax on page 5 3 apply with the following exceptions Because open drain an
77. ameter Drain subthreshold factor Gate subthreshold factor Threshold voltage See DC Model LEVEL 1 Parameters in the True Hspice Device Models Reference Manual DC Model LEVEL 2 Parameters Name Alias Unit Default LEVEL 1 0 BETA amp V 1 0 4 LAMBDA 1 0 0 LAMI 1 V 0 0 ND 1 V 0 0 Star Hspice Quick Reference Guide Description LEVEL of FET DC model Transconductance parameter gain Channel length modulation parameter Channel length modulation gate voltage parameter Drain subthreshold factor JFET and MESFET Elements Name Alias Unit NG VTO V Default 0 0 2 0 Description Gate subthreshold factor Threshold voltage See DC Model LEVEL 2 Parameters in the True Hspice Device Models Reference Manual DC Model LEVEL 3 Parameters Name Alias Unit LEVEL A m ALPHA 1 V BETA amp V 2 D 5 DELTA 8 8 Default 1 0 o 5u 20 1 0e 4 BETAeff BETA Description LEVEL of FET DC model LEVEL 3 is the Curtice MESFET model Active layer thickness Saturation factor Transconductance parameter gain Weff M Leff Semiconductor dielectric constant Si 11 7 GaAs 10 9 Ids feedback parameter of TriQuint model Star Hspice Quick Reference Guide Name Alias Unit GAMDS GAMMA LAMBDA l V Kl NCHAN 3 atom cm ND 1 V NG SAT SATEXP UCRIT V cm VBI Default 0 0 0 0 0
78. apacitance Parameters in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide BUT Element Forward Transit Time Parameters Parameter Unit s DTOH s TBVL s TEF0 s GTFE THCS s ALHC FTHC ALQF Default 4 75e 12 2 1e 12 40e 12 1 8e 12 1 4 3 0e 11 0 75 0 6 0 225 Description Low current transit time at pc 0 Time constant for base and BC SCR width modulation Voltage for modeling carrier jam at low Vep Storage time in neutral emitter Exponent factor for current dep emitter transit time Saturation time constant at high current densities Smoothing factor for current dep C and B transit time Partitioning factor for base and collection portion Factor for additional delay time of Q f See Forward Transit Time Parameters in the True Hspice Device Models Reference Manual 7 32 Star Hspice Quick Reference Guide LEVEL 8 HiCUM Model Critical Current Parameters Parameter Unit Default Description RCIO Ohm 127 8 Low field resistance of internal collector region VLIM V 0 7 Voltage separating ohmic and SCR regime VPT V 5 0 Epi punch through vtg of BC SCR VCES V 0 1 Internal CE sat vtg See Critical Current Parameters in the True Hspice Device Models Reference Manual Inverse Transit Time Parameter Unit Default Description TR s 1 0e 9 Time constant for inverse operation See Inverse Transit Time Parameter in th
79. apter 3 Diodes in the True Hspice Device Models Reference Manual Junction Model Parameters Junction DC Parameters LEVEL 1 and 3 Name Alias Unit Default Description AREA 1 0 Junction area Star Hspice Quick Reference Guide 6 3 Diodes Name Alias EXPLI IB IBV IK IKF JBF IKR JBR IS JS JSW ISP LEVEL PJ RS SHRINK Unit Default Description amp lel5 Current explosion AREAeff model parameter amp 1 0e 3 Current at breakdown voltage amp 1 0e 3 Current at breakdown voltage amp 0 0 Forward knee current AREAeff amp 0 0 Reverse knee current AREAeff amp 1 0e 14 Saturation current per AREAeff unit area amp PJeff 0 0 Sidewall saturation current per unit junction periphery Default length of diode 1 Diode model selector 1 0 Emission coefficient 0 0 Junction periphery ohms or 0 0 Ohmic series ohms m resistance 1 0 Shrink factor Star Hspice Quick Reference Guide Name Alias Unit VB BV V VAR VRB w 5 XW Default 0 0 Junction Model Parameters Description Reverse breakdown voltage Default width of diode Accounts for masking and etching effects See Using Junction Model Parameters in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Junction Capacitance Parameters Name Alias Unit CJ CJA CJO AREAeff F PJeff CJSW FC I FCS 2 Default 0 0 0 0 0 5 0 5
80. ault 0 0 See Diode Element in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Diode Model Parameters LEVEL 2 Name Alias Unit Default Description EF V cm 1 0e8 Forward critical electric field ER V cm EF Reverse critical electric field JF amp V 1 0e 10 Forward Fowler Nordheim current coefficient JR amp V JF Reverse Fowler Nordheim current coefficient L m 0 0 Length of diode for calculation of Fowler Nordheim current Star Hspice Quick Reference Guide 6 11 Diodes Name Alias Unit Default Description TOX A 100 0 Thickness of oxide layer w m 0 0 Width of diode for calculation of Fowler Nordheim current XW m 0 0 Account for masking and etching effects Level 4 JUNCAP Diode Model General Syntax General Form nodeplus nodeminus modelname Dxxx nodeplus nminus mname area z 6 12 lt lt area gt val gt lt lt peri gt val gt lt lt pgate gt val gt lt lt dtemp gt val gt lt lt off gt val gt lt lt IC gt val gt m val Diode element name Must begin with D Positive terminal anode node name The series resistor of the equivalent circuit is attached to this terminal Negative terminal cathode node name Diode model name reference Diode area In the model card it can be used by AB Star Hspice Quick Reference Guide pgate off Dtemp option list Star Hspice Quick Reference Guide Level 4 JU
81. causes termination See CPU Options in the Star Hspice Manual Interface Options Option Description ARTIST x ARTIST 2 enables the Cadence Analog Artist interface Requires a specific license Star Hspice Quick Reference Guide 12 5 Controlling Input Option CDS SDA CSDF DLENCSDF MEASOUT MENTOR x POST x post_version 2001 12 6 Description CDS 2 produces a Cadence WSF ASCII format post analysis file for Opus Requires a specific license Selects Common Simulation Data Format Viewlogic compatible graph data file format Specifies the number of digits to use with the Viewlogic compatible graph data file format Outputs MEASURE statement values and sweep parameters into an ASCII file for post analysis processing by AvanWaves or other analysis tools MENTOR 2 enables the Mentor MSPICE compatible ASCII interface Requires a specific license Enables storing of simulation results for analysis using the AvanWaves graphical interface or other methods Sets the post processing output version with a value of 2001 When using this option the user will see the new output file header which includes the right number of output variables rather than when the number exceeds 9999 Star Hspice Quick Reference Guide Option PROBE PSF x SDA ZUKEN x General Control Options Description Limits the post analysis output to just the variables designated in PROBE PRINT
82. ctor of RBiO Temperature exponent factor of RBX Temperature exponent factor of RCX Temperature exponent factor of RE BJT Element Parameter Unit Default Description ALFAV 1 K 8 25e 5 Relative temperature coefficient for avalanche breakdown ALQAV 1 K 1 96e 4 Relative temperature coefficient for avalanche breakdown See Temperature Dependence Parameters in the True Hspice Device Models Reference Manual Self Heating Parameter Unit Default Description RTH K W 0 Thermal resistance not supported in v2000 4 CTH Ws K 0 Thermal resistance not supported in v2000 4 See Self Heating Parameters in the True Hspice Device Models Reference Manual 7 42 Star Hspice Quick Reference Guide Other Parameters Parameter FBCS IS KRBI MCF MSR ZETACX Star Hspice Quick Reference Guide Unit LEVEL 8 HiCUM Model Default Description 1 0 1 0 Determine external BC capacitance partitioning Ideal saturation current applied as follows if IS gt 0 C10 IS QPO Noise analysis of internal resistance Non ideality factor of reverse current between base and collector VT VT MCF Non ideality factor of reverse current in substrate transistor VT VT MSR Temperature exponent factor epi layer 7 43 BUT Element Level 9 VBIC99 Model The VBIC 95 Vertical Bipolar Inter Company Model for Motorola bipolar transistor device was already installed in Star Hspice as BJT level 4 No
83. d open sink buffers do not have pullup circuitry do not specify the option xv_pu nd_state_pu 5 4 Star Hspice Quick Reference Guide Buffers Similarly because open source buffers do not have pulldown circuitry do not specify the option xv_pd nd_state_pd See Open Drain Open Sink Open Source Buffers in the True Hspice Device Models Reference Manual 1 0 Open Drain I O Open Sink I O Open Source Buffers All rules given in Input Output Buffer Syntax on page 5 4 apply with the following exceptions Because I O open drain and I O open sink buffers do not have pullup circuitry do not specify the option xv pu nd state pu Similarly because I O open source buffers do not have pulldown circuitry do not specify the option xv pd nd state pd See I O Open Drain I O Open Sink I O Open Source Buffers in the True Hspice Device Models Reference Manual Input ECL Buffer Syntax B input ecl nd pc nd gc nd in nd out of in file file_name model model_name typ typlminImax fastlslow power onloff buffer 11linput_ecl interpol 112 nowarn c_com_pc c_com_pc_value c_com_gc c_com_gc_value Star Hspice Quick Reference Guide 5 5 IBIS Conventions See Input ECL Buffer in the True Hspice Device Models Reference Manual Output ECL Buffer Syntax B output ecl nd pu nd out nd in nd pc nd gc file file_name model model_name typ typlminImaxlfastlslow p
84. dependence on coefficient XTF 0 0 TF bias dependence coefficient See Using Transit Time Parameters in the True Hspice Device Models Reference Manual Noise Parameters Name Alias Unit Default Definition AF 1 0 Flicker noise exponent KF 0 0 Flicker noise coefficient See Using Noise Parameters in the True Hspice Device Models Reference Manual LEVEL 6 Philips Bipolar Model General Form nc nb ne ns mname lt AREA val gt lt OFF lt VBE val gt VCE val lt M val gt lt DTEMP val gt AREA The normalized emitter area DTEMP The difference between element and circuit temperature 7 10 Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model M Multiplier to simulate multiple BJTs in parallel mname BJT model name reference nb Base node name or number nc Collector terminal node name or number ne Emitter terminal node name or number ns Substrate node name or number OFF Sets initial condition to OFF for this element in DC analysis Qxxx BJT element name VBE Initial internal base to emitter voltage VCE Initial internal collector to emitter voltage See LEVEL 6 Element Syntax in the True Hspice Device Models Reference Manual LEVEL 6 Model Parameters The following tables describe MEXTRAM as LEVEL 6 model parameters including parameters name descriptions units default values and notes For more detailed information see LEVEL 6 Model Parameters in the
85. dition to OFF for this element in DC analysis Perimeter of the drain junction Perimeter of the source junction Star Hspice Quick Reference Guide MOSFET Element Statement RDC Additional drain resistance due to contact resistance with units of ohms RSC Additional source resistance due to contact resistance with units of ohms W MOSFET channel width in meters See MOSFETS in the Star Hspice Manual MOSFET Model Statement General Form MODEL mname PMOS NMOS lt LEVEL val gt keynamel vall lt keyname2 val2 gt VERSION version number Or MODEL mname NMOS lt LEVEL val keynamel vall gt lt keyname2 val2 gt lt VERSION version number LEVEL The MOSFET model includes several device model types mname Model name NMOS Identifies an N channel MOSFET model PMOS Identifies a P channel MOSFET model See Using the General MOSFET Model Statement in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 9 3 MOSFET Introduction Diode Model Parameters See Using MOSFET Diode Model Parameters in the True Hspice Device Models Reference Manual DC Model Parameters Name Alias Unit ACM 15 amp m JSW amp m IS amp N NDS VNDS Default 0 0 0 le 14 Description Area calculation method Bulk junction saturation current Sidewall bulk junction saturation current Bulk junction saturation current
86. due to contact resistance with units of ohms Thermal resistance per unit width Thermal capacitance per unit width Sets initial condition to OFF Turning off BJT if equal to 1 Initial guess in order drain front gate internal body back gate external voltage The UC Berkeley SOI BSIM3 SOI Dynamically Depleted DD model is now installed in Star Hspice as LEVEL 60 10 42 Star Hspice Quick Reference Guide LEVEL 61 RPI a Si TFT Model For more information about this model see LEVEL 60 UC Berkeley BSIM3 SOI DD Model in the True Hspice Device Models Reference Manual LEVEL 61 RPI a Si TFT Model Star Hspice LEVEL 61 is AIM SPICE MOS15 amorphous silicon a Si thin film transistor TFT model LEVEL 61 developed by Renssalear Polytechnic Institute uses the general model statement described in MOSFET Model Statement on page 9 3 For more information about this model see LEVEL 61 RPI a Si TFT Model in the True Hspice Device Models Reference Manual LEVEL 61 with Star Hspice Set LEVEL 61 to use the AIM SPICE MOS15 a Si TFT model Default value for L is 100 default value for W is 100 m LEVEL 61 model is a 3 terminal model A fourth node can be specified but does not affect simulation results The default room temperature is 25 C in Star Hspice but 27 C in SPICE3 if LEVEL 61 model parameters are specified at 27 C use OPTION TNOM 27 See Using LEVEL 61 in the True Hspice Device Models
87. dy diode current CBDO GMO LX7 DC gate transconductance GMO GDSO LX8 DC drain source conductance GDSO GMESO LX9 DC substrate transconductance GMBSO GBDO LX10 Conductance of the drain diode GBDO GBSO LX11 Conductance of the source diode GBSO MOSFET Models Meyer and Charge Conservation Model Parameters Name Alias Description LX12 LX13 Body charge QB Body charge current CQB LX14 Gate charge QG LX15 LX16 Gate charge current CQG Channel charge QD CQD LX17 Channel charge current CQD CGGBO LX18 CGGBO dQg dVg intrinsic gate capacitance CGDBO LX19 CGDBO dQg dVd intrinsic gate to drain capacitance CGSBO LX20 CGSBO dQg dVs intrinsic gate to source capacitance CBGBO LX21 CBGBO dQb dVg intrinsic floating body to gate capacitance CBDBO LX22 CBDBO dQb dVd intrinsic floating body to drain capacitance CBSBO LX23 CBSBO dQb dVs intrinsic floating body to source capacitance CDGBO LX32 CDGBO dQd dVg intrinsic drain to gate capacitance 10 38 Star Hspice Quick Reference Guide LEVEL 59 UC Berkeley BSIM3 SOI FD Model Name Alias Description CDDBO LX33 CDDBO dQd dVd intrinsic drain capacitance CDSBO LX34 CDSBO dQd dVs intrinsic drain to source capacitance QE LX35 Substrate charge QE CQE LX36 Substrate charge current CQE CDEBO LX37 CDEBO dQd dVe intrinsic drai
88. e The default is 0 1v name Element name to check mname Model name Star Hspice checks elements of this model for bias You can use a wild card to describe name and mname in the biaschk card stands for one character stands for or more characters Options for the biaschk Command Output file defined option General Form option biasfile biaschk mos bias 13 14 Star Hspice Quick Reference Guide FFT Analysis Warning message turn off on option General Form biawarn 1 on General Form option biawarn 0 off default FFT Analysis FFT Statement General Form output var START value STOP value NP value FORMAT keyword WINDOW keyword ALFA value FREQ value FMIN value FMAX value ALFA Parameter used in GAUSS and KAISER windows to control the highest side lobe LEVEL bandwidth and so on FMAX Maximum frequency for which FFT output is printed in the listing file or which is used in THD calculations FMIN Minimum frequency for which FFT output is printed in the listing file or which is used in THD calculations FORMAT Output format FREQ Frequency of interest FROM An alias for START Star Hspice Quick Reference Guide 18 15 Analyzing Data NP output_var START STOP TO WINDOW Number of points used in the FFT analysis Any valid output variable such as voltage curren
89. e VBS Threshold voltage bias dependent Saturation voltage VDSAT Drain diode periphery PD Source diode periphery PS Drain resistance squares RDS Source resistance squares RSS 10 15 MOSFET Models GDEFF GSEFF BETAEFF GAMMAEFF COVLGS COVLGD COVLGB VBS VGS VDS CDO CBSO CBDO GMO GDSO GMBSO GBDO GBSO LV16 LV17 LV21 LV22 LV36 LV37 LV38 LXI LX2 LX3 LX4 LX5 LX6 LX7 LX8 LX9 LX10 LXII LX12 LX13 LX14 Effective drain conductance 1 RDeff rgeoMod is not 0 Effective source conductance I RSeff rgeoMod is not 0 BETA effective GAMMA effective Gate source overlap and fringing capacitances Gate drain overlap and fringing capacitances Gate bulk overlap capacitances Bulk source voltage VBS Gate source voltage VGS Drain source voltage VDS DC drain current CDO DC source bulk diode current CBSO DC drain bulk diode current CBDO DC gate transconductance GMO DC drain source conductance GDSO DC substrate transconductance GMBSO Conductance of the drain diode GBDO Conductance of the source diode GBSO Bulk charge QB Bulk charge current CQB Gate charge QG Star Hspice Quick Reference Guide LX15 QD LX16 CQD LX17 CGGBO LX18 CGDBO LX19 CGSBO LX20 CBGBO LX21 CBDBO LX22 CBSBO LX23 QBD LX24 QBS LX26 CAP BS LX28 CAP BD LX29 CDGBO LX32 CDDBO LX33 CDSBO LX34 igso LX38 igdo LX39 weff LX62 Star Hspice Quick Refere
90. e True Hspice Device Models Reference Manual Base Current Components Parameter Unit Default Description IBEIS A 1 16e 20 BE saturation current MBEI 1 015 BE saturation current Star Hspice Quick Reference Guide 7 33 i BJT Element Parameter Unit Default Description IREIS A 1 16e 6 BE recombination saturation current MREI 2 0 BE recombination non ideality factor IBCIS A 1 16e 20 BC saturation current MBCI 1 015 BC non ideality factor See Base Current Components Parameters in the True Hspice Device Models Reference Manual Weak BC Avalanche Breakdown Parameter Unit Default Description FAVL 1 V 1 186 Pre factor for CB avalanche effect QAVL As 1 11 14 X Exponent factor for CB avalanche effect See Weak BC Avalanche Breakdown Parameters in the True Hspice Device Models Reference Manual Internal Base Resistance Parameter Unit Default Description RBIO Ohm 0 Value at zero bias 7 34 Star Hspice Quick Reference Guide LEVEL 8 HiCUM Model Parameter Unit Default Description FDQRO 0 0 Correction factor for modulation by BE abd BC SCR FGEO 0 73 Geometry factor value corresponding to long emitter stripe FQI 0 9055 Ratio of internal to total minority charge FCRBI 0 0 Ratio of h f shunt to total internal capacitance See Internal Base Resistance Parameters in the True Hspice Device Models Reference Manual Lateral Scaling Parameter Unit Default Description LATB 3 765 Scaling
91. e agreement or a type of written non disclosure agreement with Avant corporation or its subsidiaries ALL INFORMATION CONTAINED HEREIN SHALL BE KEPT IN CONFIDENCE AND USED STRICTLY IN ACCORDANCE WITH THE TERMS OF THE WRITTEN NON DISCLOSURE AGREEMENT OR WRITTEN LICENSE AGREEMENT WITH AVANT CORPORATION OR ITS SUBSIDIARIES ii Star Hspice Quick Reference Guide Trademark Service Mark Notice Apolloll ApolloII GA Aurora ASIC Synthesizer AvanTestchip AvanWaves ChipPlanner Columbia Columbia CE Cyclelink Davinci DFM Workbench Driveline Dynamic Model Switcher Electrically Aware Enterprise EnterpriseACE Evaccess Hercules Hercules Explorer HotPlace HSPICE HSPICE LINK LTL Libra Passport Lynx Lynx LB Lynx VHDL Mars Mars Rail Mars Xtalk MASTER Toolbox Medici Michelangelo Milkyway Optimum Silicon Passport Pathfinder Planet Planet PL Planet RTL Polaris Polaris CBS Polaris MT Progen Prospector Raphael Raphael NES Saturn Sirius Silicon Blueprint Smart Extraction Solar Solar II Star Star Sim Star Hspice Star Hspice XT RF Star HspiceLink Star DC Star RC Star Power Star Time Star MTB Star XP Taurus Taurus Device Taurus Layout Taurus Lithography Taurus OPC Taurus Process Taurus Topography Taurus Visual Taurus Workbench TimeSlice True Hspice and TSUPREM 4 are trademarks of Avant Corporation Avant Avant logo AvanLabs and avanticorp are trademarks and service marks of Avant Corpora
92. e reduction cm MUEPH2 0 0 mobility reduction WO 0 0log cm minimum gate width Table 10 8 Level 64 Mobility Parameters Sheet 1 of 3 Parameter Default Description VDSO 0 05V drain voltage for extracting low field mobility MUECBO 300 0cm2 Coulomb scattering Vs MUECBI 30 0cm Coulomb scattering Vs MUEPHO 0 295 phonon scattering MUEPHI 1 0e7 phonon scattering 10 56 Star Hspice Quick Reference Guide Level 64 HiSIM1 0 Model Table 10 8 Level 64 Mobility Parameters Sheet 2 of 3 Parameter Default Description MUETMP 0 0 temperature dependence of phonon scattering MUESRO 1 0 surface roughness scattering MUESRI 7 0e8 surface roughness scattering NDEP 1 0 coefficient of effective electric field NINV 0 5 coefficient of effective electric field NINVD 0 modification of NINV BB 2 0 NMO high field mobility S degradation 1 0 PMOS VMAX 1 0e7cm s maximum saturation velocity VOVER 0 0 velocity overshoot effect Star Hspice Quick Reference Guide 10 57 MOSFET Models Table 10 8 Level 64 Mobility Parameters Sheet 3 of 3 Parameter VOVERP RPOCKI RPOCK2 Default 0 0 0 0V2 m 2A 0 0V Description Late dependence of velocity overshoot resistance coefficient caused by the potential barrier resistance coefficient caused by the potential barrier Table 10 9 Level 64 Channel Length Modulation Parame
93. ee TEMP Statement in the Star Hspice Manual Transient Analysis TRAN Statement See Using the TRAN Statement in the Star Hspice Manual Data Driven Sweep General Form TRAN DATA datanm Or TRAN tincrl tstopl tincr2 tstop2 tincrN tstopN START val lt UIC gt SWEEP DATA datanm gt Or TRAN DATA datanm lt SWEEP var lt START gt pstart lt STOP gt pstop lt STEP gt pincr gt Or TRAN DATA datanm lt SWEEP var type np pstart pstop gt Or TRAN DATA datanm lt SWEEP var START param_expr1 STOP param_expr2 STEP param_expr3 gt Star Hspice Quick Reference Guide 13 11 Analyzing Data Or TRAN DATA datanm lt SWEEP var start_expr stop_expr step_expr gt Monte Carlo Analysis General Form TRAN tincrl tstopl lt tincr2 tstop2 tincrN tstopN gt START val lt UIC gt lt SWEEP MONTE val gt Optimization General Form DATA datanm MONTE val np param_expr pincr pstart 13 12 TRAN DATA datanm OPTIMIZE opt_par_fun RESULTS measnames MODEL optmod Data name referenced in the TRAN statement Produces a number val of randomly generated values used to select parameters from a distribution Number of points per decade or depending on the preceding keyword User specified expressions Voltage current element or model parameter or temperature increment value Starting volta
94. efs VGbs gt UFSOI has non fully depleted NFD and fully depleted FD SOI models no dynamic mode operating between NFD and FD allowed that separately describe two main types of SOI devices The UFSOI version 4 5F model has been installed in Star Hspice as LEVEL 58 This model is described in the UFSOI Model User s Manual which can be found at http www soi tec ufl edu LEVEL 58 uses the same arguments described in LEVEL 57 Template Output on page 10 26 In some processes there is an external body contact to the device Star Hspice only supports a 4 terminal device which includes drain front gate source and back gate or substrate Additional body contact is not supported and is floated The effects of parasitic diodes in SOI are different from those in bulk MOSFET The Star Hspice junction model ACM developed for bulk MOSFETs is not included in the SOI model For more information about this model see LEVEL 58 University of Florida SOI Model in the True Hspice Device Models Reference Manual 10 32 Star Hspice Quick Reference Guide LEVEL 58 University of Florida SOI Model ven the UFSOI Model in Star Hspice Default value for channel length L and width W is 1 0e 6 LEVEL 58 supports only 4 nodes only floating body devices AB is usually zero and should be specified When the self heating option is activated RTH and CTH define the thermal impedance of the device For M 1 W AD
95. elay keyword Keyword for ideal transformer Keyword for voltage controlled voltage source Controlling voltage across nodes in and in Corresponding element values of x See E Element Parameters in the Star Hspice Manual Star Hspice Quick Reference Guide 11 11 Behavior Macromodeling F Elements Current Controlled Current Sources CCCS Linear General Form Fxxx n n lt CCCS gt vnl gain MAX val lt MIN val gt lt SCALE val gt lt TCl val gt lt TC2 val gt lt M val gt lt ABS 1 gt lt IC val gt Polynomial General Form Fxxx n n CCCS POLY ndim vnl lt vnndim lt MAX val gt lt MIN val gt lt TCl val gt lt TC2 val gt lt SCALE vals gt lt M val gt lt ABS 1 gt p0 pl lt IC vals gt Piecewise Linear General Form Fxxx n n CCCS PWL 1 vnl DELTA val lt SCALE val gt lt TCl val gt lt TC2 val gt lt M val gt x1 yl x100 y100 lt IC val gt Multi Input Gates General Form Fxxx n n CCCS gatetype k vnl vnk lt DELTA val gt lt SCALE val gt lt TCl val gt lt TC2 val gt lt M val gt ABSzI x1 y1 x100 y100 lt IC val gt 11 12 Star Hspice Quick Reference Guide Delay Element Voltage and Current Controlled Elements General Form Fxxx n n lt CCCS gt DELAY vnl TD val lt SCALE val gt TCI val lt TC2 val gt NPDELA Y val See Current Controlled Current Source CCCS in the
96. elects different DC model equations mname Model name NJF Identifies an n channel JFET or MESFET model PJF Identifies a p channel JFET or MESFET model pnamel vall include several model parameters See Using JFET and MESFET Model Statements in the True Hspice Device Models Reference Manual JFET Model Parameters See JFET and MESFET Model Parameters in the True Hspice Device Models Reference Manual Gate Diode DC Parameters Name Alias Unit Default Description ACM Area calculation method ALIGN m 0 Misalignment of gate Star Hspice Quick Reference Guide 8 3 JFET and MESFET Elements Name Alias Unit AREA HDIF m IS amp L m LDEL m LDIF m N RD ohm RG ohm 8 4 Default 1 0e 14 0 0 0 0 1 0 0 0 0 0 Description The default area multiplier Distance of the heavily diffused or low resistance region from source or drain contact edge to lightly doped region Gate junction saturation current Default length of FET Difference between drawn and actual or optical device length Width of the lightly doped region from heavily doped region to transistor edge Emission coefficient for gate drain and gate source diodes Drain ohmic resistance Gate resistance Star Hspice Quick Reference Guide Name Alias Unit RS ohm RSH ohm sq RSHG ohm sq RSHL ohm sq w m WDEL m Default 0 0 0 0 0 0 JFET Model Parameters Description Source ohmic resistance
97. elects the WHEN function See FIND and WHEN Functions in the Star Hspice User Guide DOUT Statement DOUT nd VTH time state time state where ndis the node name VTH is the single voltage threshold time is an absolute time point state is one of the following expected conditions of the nd node at the specified time 0 expect ZERO LOW 1 expect ONE HIGH else Don t care DOUT nd VLO VHI time state time state where ndis the node name VLO is the voltage of the logic low state VHl is the voltage of the logic high state Star Hspice Quick Reference Guide 15 15 Output Format time is an absolute time point state is one of the following expected conditions of the nd node at the specified time 0 expect ZERO LOW 1 expect ONE HIGH else Don t care See DOUT Statement Expected State of Digital Output Signal in Chapter 8 of the Star Hspice Manual STIM Statement You can use the STIM statement to reuse the results output of one simulation as input stimuli in a new simulation The STIM statement specifies Expected stimulus PWL Source DATA CARD or VEC FILE Signals to transform Independent variables One STIM statement produces one corresponding output file Syntax Brackets enclose comments which are optional stim tran ac dc PWL DATA VEC filename output filename 15 16 Star Hspice Quick
98. eling from Conduction Band is significant in accumulation Determined by EVB Electron tunneling from Valence Band is significant in inversion Flat band Voltage between Gate and S D diffusions Effective Gate to Source Voltage Voltage Across Oxide Asymmetric and Bias Dependent Source Resistance rdsMod 1 Asymmetric and Bias Dependent Drain Resistance rdsMod 1 Zero voltage bias Bulk source capacitance Star Hspice Quick Reference Guide cap_bdz Lx81 cggbm LX82 cgdbm LX83 cgsbm LX84 cddbm LX85 cdsbm LX86 cdgbm LX87 cbgbm LX88 cbdbm LX89 cbsbm LX90 capfg LX91 Star Hspice Quick Reference Guide LEVEL 54 BSIM 4 0 Model Zero voltage bias Bulk drain capacitance total gate capacitance including intrinsic all overlap and fringing components total gate to drain capacitance including intrinsic overlap and fringing components total gate to source capacitance including intrinsic overlap and fringing components total drain capacitance including intrinsic overlap and fringing components and junction capacitance total drain to source capacitance total drain to gate capacitance including intrinsic overlap and fringing components total bulk to gate capacitance including intrinsic overlap components total bulk to drain capacitance including intrinsic and junction capacitance total bulk to source capacitance including intrinsic and junction capacitance fringing capacitance 10 19 MOSFET
99. ence Guide MONTE val np OPTIMIZE RESULTS start stopl SWEEP TEMP type varl Star Hspice Quick Reference Guide 13 3 DC Analysis Produces a number val of randomly generated values which are used to select parameters from a distribution Number of points per decade or depending on the preceding keyword Specifies the parameter reference name used in the PARAM statement Specifies the measure name used in the MEASURE statement Starting voltage current element model parameters or temperature values Final voltage current any element model parameter or temperature values Indicates a second sweep has different type of variation DEC OCT LIN POI DATA statement or MONTE val Indicates a temperature sweep Can be any of the following keywords DEC OCT LIN POL Name of an independent voltage or current source any element or model parameter or the keyword TEMP Analyzing Data OP Statement Operating Point General Form OP format time format time format Any of the following keywords ALL BRIEF CURRENT DEBUG NONE VOLTAGE time Parameter after ALL VOLTAGE CURRENT or DEBUG to specify the time at which the report is printed See OP Statement Operating Point in the Star Hspice Manual PZ Statement Pole Zero Analysis General Form PZ ov srcnam ov Output variable a node voltage V n or branch current I eleme
100. erkeley BSIM3v3 requires 10 LEVEL 53 on the other hand is completely compliant with Berkeley BSIM3v3 all Hspice specific parameters default to OFF For more information about this model see LEVELs 49 and 53 BSIM3v3 MOS Models in the True Hspice Device Models Reference Manual Selecting Model Versions The recommended BSIM3v3 model specification is LEVEL 49 VERSION 3 22 See Selecting Model Versions in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 10 9 MOSFET Models LEVEL 50 Philips MOS9 Model The Philips MOS9 model available in Star Hspice as LEVEL 50 uses the general model statement described in MOSFET Model Statement on page 9 3 Specific changes include The ACM Parasitic Diode Model using parameters JS JSW N CJ CISW CJGATE MJ MJSW PB PHP ACM and HDIF was added The Philips JUNCAP Parasitic Diode Model were added The model parameter JUNCAP 1 selects the JUNCAP Model JUNCAP 0 default selects the Hspice ACM Model Gate noise current is not available For more information see http www us semiconductors com Philips_Models Also see LEVEL 50 Philips MOS9 Model in the True Hspice Device Models Reference Manual Using the Philips MOS9 Model in Star Hspice Set LEVEL 50 to identify the model as Philips MOS Model 9 The default room temperature is 25 C in Star Hspice but 27 in SPICE3 Always include TR which corresp
101. est risetime of the signal OPTION RISETIME x Used in the local truncation error timestep algorithm LVLTIM 2 Sets the absolute minimum voltage for DC and transient analysis Stops the transient analysis when all TRIG TARG and FIND WHEN measure functions are calculated To use AUTOSTOP with measure functions such as AVG RMS MIN MAX PP ERR ERR1 2 3 or PARAM set OPTION autostop from_to or OPTION autostsop from_to 1 Sets the size of the breakpoint table Speeds up simulation by not updating the status of latent devices Specifies the tolerance for the voltage at which a MOSFET MESFET JFET BJT or diode is considered latent Star Hspice Quick Reference Guide Option FAST ITLPZ MBYPASS x ABSVAR x DELMAX x DVDT FS x FT x IMIN x ITL3 x Star Hspice Quick Reference Guide Model Analysis Options Description Speeds up simulation by not updating the status of latent devices Sets the pole zero analysis iteration limit Used to compute the default value for the BYTOL control option Sets the limit on the maximum voltage change from one time point to the next Sets the maximum value for the internal timestep Delta Allows the timestep to be adjusted based on node voltage rates of change Sets the fraction of a timestep TSTEP that Delta the internal timestep is decreased for the first time point of a transient Sets the fraction of a timestep TSTEP
102. etween dbNode and bNode Resistance connected between sbNode and bNode Number of device fingers Whether to minimize the number of drain or source diffusions for even number fingered device Drain contact resistance for per finger device Source contact resistance for per finger device Shift in zero bias threshold voltage VTHO Low field mobility UO multiplier Shift in body bias coefficient K1 Shift in subthreshold swing factor NFACTOR Sets initial condition to OFF in DC analysis Initial guess in the order Star Hspice Quick Reference Guide 10 13 MOSFET Models The UC Berkeley BSIM 4 0 0 MOS model is the LEVEL 54 Star Hspice model it can model sub 0 13 micron CMOS technology and RF high speed CMOS circuit simulation BSIM4 0 0 has major improvements and additions over BSIM3v3 including A model of the intrinsic input resistance for both RF high frequency analog and high speed digital applications Flexible substrate resistance network for RF modeling A channel thermal noise model and a noise partition model for the induced gate noise A non quasi static NQS model consistent with the Rii based RF model and an AC model that accounts for the NQS effect in both transconductances and capacitances A gate direct tunneling model A geometry dependent parasitics model for various source drain connections and multi finger devices A model for steep vertical retrograde doping profiles
103. factor for Qfc in b E direction LATL 0 342 Scaling factor for Qfc inl E direction See Lateral Scaling in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 7 351 BUT Element Peripheral Elements See Peripheral Elements in the True Hspice Device Models Reference Manual BE Depletion Capacitance Parameter Unit Default Description CJEP0 F 2 07 15 Zero bias value VDEP V 1 05 Built in voltage ZEP 0 4 Depletion coeff ALJEP 2 4 Ratio of max to zero bias value See BE Depletion Capacitance in the True Hspice Device Models Reference Manual Base Current Parameter Unit Default Description IBEPS A 3 72e 21 Saturation current MBEP 1 015 Non ideality factor IREPS A le 30 Recombination saturation factor MREP 2 0 Recombination non ideality factor See Base Current in the True Hspice Device Models Reference Manual 7 36 Star Hspice Quick Reference Guide LEVEL 8 HiCUM Model BE Tunneling Parameter Unit Default Description IBETS A 0 Saturation current ABET 0 0 Exponent coefficient See BE Tunneling in the True Hspice Device Models Reference Manual External Elements See External Elements in the True Hspice Device Models Reference Manual BC Capacitance Parameter Unit Default Description CJCXO F 5 393e 15 Zero bias depletion value VDCX V 0 7 Built in voltage ZCX 0 333 Exponent coefficient VPTCX V 100 Punch through voltage CCO
104. ference Manual Star Hspice Quick Reference Guide 7 29 i BUT Element Internal Transistors See Internal Transistors in the True Hspice Device Models Reference Manual Transfer Current Parameters Parameter C10 HJEI ALIT Unit A 2s As Default 3 76e 32 2 78e 14 2 09e 07 1 0 1 0 1 0 0 0 0 45 Description Constant IS QPO Zero bias hole charge High current correction for 2D 3D Weighting factor for Qfc mainly for HBTs Weighting factor for Qef in HBTs Weighting factor for Qjci in HBTs Weighting factor for Qjei in HBTs Factor for additional delay time of iT See Transfer Current Parameters in the True Hspice Device Models Reference Manual 7 30 Star Hspice Quick Reference Guide BE Depletion Capacitance Parameters Parameter Unit Default VDEI 0 95 CJEIO F 8 11e 15 ZEI 0 5 ALJEI 1 8 LEVEL 8 HiCUM Model Description Built in voltage Zero bias value Exponent coefficient Ratio of max to zero bias value See BE Depletion Capacitance Parameters in the True Hspice Device Models Reference Manual BC Depletion Capacitance Parameters Parameter Unit Default CJCIO F 1 16e 15 VDCI 0 8 ZCI 0 333 VPTCI 416 Description Zero bias value Built in voltage Exponent coefficient Punch through voltage q Nei w 2ci 2epsilion See BC Depletion C
105. ferenced by the GRAPH statement PLOT Keyword for a GRAPH statement model pnaml vall Each GRAPH statement model includes a variety of model parameters See MODEL Statement for GRAPH in the Star Hspice Manual MEASURE Statement Rise Fall and Delay General Form MEASURE DCIACITRAN result TRIG TARG lt GOAL val gt MINVAL val lt WEIGHT val gt DCIACITRAN Analysis type of the measurement If omitted the last analysis mode requested is assumed GOAL Desired measure value in optimization MEASURE Specifies measurements MINVAL If the absolute value of GOAL is less than MINVAL the GOAL value is replaced by MINVAL in the denominator of the ERRfun expression Star Hspice Quick Reference Guide 15 7 Output Format result Name associated with the measured value in the Star Hspice output TRIG TARG Identifies the beginning of trigger and target specifications respectively WEIGHT The calculated error is multiplied by the weight value See MEASURE Statement Rise Fall and Delay in the Star Hspice Manual Trigger General Form TRIG trig var VAL trig_val TDz time delay lt CROSS c gt lt RISE r gt lt FALL f gt Or TRIG AT val result Name associated with the measured value in the Star Hspice output See Trigger in the Star Hspice Manual Target General Form TARG targ var VAL targ_val lt TD time delay CROSS c LAST
106. ffective source conductance 1 RSeff 10 26 Star Hspice Quick Reference Guide LEVEL 57 UC Berkeley BSIM3 SOI Model Name Alias Description COVLGS LV36 Gate source overlap and fringing capacitances COVLGD LV37 Gate drain overlap and fringing capacitances COVLGE LV38 Gate substrate overlap capacitances VES LX1 Substrate source voltage VES VGS LX2 Gate source voltage VGS VDS Drain source voltage VDS CDO LX4 DC drain current CDO CBSO LX5 DC source body diode current CBSO CBDO LX6 DC drain body diode current CBDO GMO LX7 DC gate transconductance GMO GDSO LX8 DC drain source conductance GDSO GMESO LX9 DC substrate transconductance GMBSO GBDO LX10 Conductance of the drain diode GBDO GBSO LX11 Conductance of the source diode GBSO See LEVEL 57 Template Output in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 10 27 MOSFET Models Meyer and Charge Conservation Model Parameters Name QB CQB QG CQG QD CQD CGGBO CGDBO CGSBO CBGBO CBDBO CBSBO 10 28 Alias LX12 LX13 LX14 LX15 LX16 LX17 LX18 LX19 LX20 LX21 LX22 LX23 Description Body charge QB Body charge current CQB Gate charge QG Gate charge current CQG Channel charge QD Channel charge current CQD dQg dVg intrinsic gate capacitance CGDBO dQg dVd intrinsic gate to drain capacitance CGSBO dQg dVs intrinsic gate to
107. frequency in Hertz MAXFLD Maximum allowed number of folding intervals NUMF Maximum allowed number of user specified frequencies TOL Sampling error tolerance See SAMPLE Statement Noise Folding Analysis in the Star Hspice Manual Small Signal Network Analysis NET Statement AC Network Analysis One port network General Form NET input lt RIN val Or NET input val Two port network General Form NET output input lt ROUT val RIN val input AC input voltage or current source name Star Hspice Quick Reference Guide 13 9 Analyzing Data output Output port RIN Input or source resistance keyword ROUT Output or load resistance keyword See NET Statement AC Network Analysis in the Star Hspice Manual AC Network Analysis Output Specification General Form Xij z ZIN z ZOUT z YIN z YOUT z ij Identifies which matrix parameter to print X Specifies Z for impedance Y for admittance H for hybrid and S for scattering YIN Input admittance YOUT Output admittance Z Output type R L M P DB T ZIN Input impedance ZOUT Output impedance See AC Network Analysis Output Specification in the Star Hspice User Guide 13 10 Star Hspice Quick Reference Guide Temperature Analysis Temperature Analysis TEMP Statement General Form TEMP tl t2 t3 5 t1 t2 Specifies temperatures in at which the circuit is to be simulated S
108. g current DV LX3 Derivative of source voltage with respect to control current 15 24 Star Hspice Quick Reference Guide Element Template Listings Independent Voltage Source Name VOLT VOLTM VOLTP Alias LVI LV2 LV3 Description DC transient voltage AC voltage magnitude AC voltage phase Independent Current Source Name CURR CURRM CURRP Diode Name AREA AREAX IC VD IDC Alias LVI LV2 LV3 Alias LV1 LV23 LV2 LXI Description DC transient current AC current magnitude AC current phase Description Diode area factor Area after scaling Initial voltage across diode Voltage across diode VD excluding RS series resistance DC current through diode ID excluding RS Total diode current is the sum of IDC and ICAP Star Hspice Quick Reference Guide 1525 Output Format Name GD QD ICAP PID BJT Name AREA ICVBE ICVCE MULT FT ISUB GSUB LOGIC LOGIB 15 26 Alias LX2 LX3 LX4 LX5 LX7 Alias LV1 LV2 LV3 LV4 LV5 LV6 LV7 LV8 LV9 Description Equivalent conductance GD Charge of diode capacitor QD Current through diode capacitor Total diode current is the sum of IDC and ICAP Total diode capacitance Photo current in diode Description Area factor Initial condition for base emitter voltage VBE Initial condition for collector emitter voltage VCE Number of multiple BJTs FT Unity gain bandwidth
109. ge current temperature any element or model parameter value Star Hspice Quick Reference Guide pstop START SWEEP tincrl tstopl type UIC var Transient Analysis Final voltage current temperature any element or model parameter value Time at which printing plotting begins Indicates a second sweep is specified on the TRAN statement Printing plotting increment for printer output and the suggested computing increment for the postprocessor Time at which the transient analysis stops incrementing by tincrl Specifies any of the following keywords DEC OCT LIN POI Causes Star Hspice to use the nodal voltages specified in the IC statement or by the IC parameters in the various element statements to calculate the initial transient conditions rather than solving for the quiescent operating point Name of an independent voltage or current source any element or model parameter or the keyword TEMP Star Hspice Quick Reference Guide 18 13 Analyzing Data BIASCHK Statement General Form biaschk type terminall tl terminal2 t2 limit lim lt noise ns gt lt name devname1 gt name devname2 lt mname modelname1 gt mname modelname2 type Element type to check terminal 1 Terminals between which Star Hspice terminal2 checks checks between terminall and terminal2 limit Biaschk limit that you define noise Biaschk noise that you defin
110. ib bjt search usr meta h92 lib dio search usr meta h92 lib fet search usr meta h92 lib macro add any user options parameters model includes subcircuit includes or libraries here BE Se wh opo puppe 2 2 Star Hspice Quick Reference Guide 724 Chapter 3 Passive Devices and Independent Sources The topics covered in this chapter are Statements Resistors Capacitors Inductors Magnetics Independent Source Element Independent Sources The passive devices and independent sources in Star Hspice can use the following Statements Element Statement General Form NAME nodel node2 nodeN model reference value optional parameters Star Hspice Quick Reference Guide 3 1 Passive Devices and Independent Sources Model Statement General Form MODEL mname modeltype Resistors lt keyword value keyword value gt See Resistors in the Star Hspice Manual Resistor Element General Form Rxxx nl n2 lt mname gt Rval TCI lt TC2 gt gt Or SCALE val M val lt AC val gt lt DTEMP val gt lt L val gt W val C val Rxxx nl n2 lt mname gt R val lt TC1 val gt lt TC2 val gt SCALE val lt M val gt lt AC val gt lt DTEMP val gt lt L val gt Wzval lt C val gt Rxxx nl n2 R users defined equation If mname is specified the resistor value specification would be optional AC Resistance for AC a
111. icient for drain resistor TRS 1 K 0 0 Temperature coefficient for source resistor XTI 0 0 Saturation current temperature exponent See Temperature Effects Parameters in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 9 15 LI LI MOSFET Introduction Star Hspice Quick Reference Guide 724 Chapter 1 0 MOSFET Models This chapter briefly introduces MOSFET usage and concisely describes the commonly used models The topics covered in this chapter are Model Table LEVEL 47 BSIM3 Version 2 MOS Model LEVELs 49 and 53 BSIM3v3 MOS Models LEVEL 50 Philips MOS9 Model LEVEL 54 BSIM 4 0 Model LEVEL 55 EPFL EKV MOSFET Model LEVEL 57 UC Berkeley BSIM3 SOI Model LEVEL 58 University of Florida SOI Model LEVEL 59 UC Berkeley BSIM3 SOI FD Model LEVEL 60 UC Berkeley BSIM3 SOI DD Model LEVEL 61 RPI a Si TFT Model LEVEL 62 RPI Poli Si TFT Model MOS Level 63 Philips MOS11 Model Level 64 HiSIM1 0 Model For more information about these and other models see Chapters 21 and 22 in the Star Hspice User Guide Star Hspice Quick Reference Guide MOSFET Models Model Table All All Platforms Platforms including except LEVEL MOSFET Model Description PC PC 1 Schichman Hodges X 2 MOS2 Grove Frohman X SPICE 2G 3 MOS3 empirical SPICE 2G X 4 Grove Frohman LEVEL 2 model derived from SPICE 2E 3 5 AMI ASPEC depletion and enhancement Ta
112. idth Modulation Parameters in the True Hspice Device Models Reference Manual High Current Beta Degradation Effect Parameters Name Alias Unit Default Definition IKF IK amp 0 0 Corner for forward Beta JBF high current roll off IKR JBR 0 0 Corner for reverse Beta high current roll off NKF 0 5 Exponent for high current Beta roll off IKF 1 amp 0 0 Corner for forward Beta JBF high current roll off See Using High Current Beta Degradation Effect Parameters in the True Hspice Device Models Reference Manual 7 6 Star Hspice Quick Reference Guide BJT Model Parameters Parasitic Resistance Parameters Name Alias Unit IRB IRB amp IOB RB ohm RBM ohm RC ohm RE ohm Default 0 0 0 0 RB 0 0 0 0 Definition Base current where base resistance falls half way to RBM Base resistance Minimum high current base resistance Collector resistance Emitter resistance See Using Parasitic Resistance Parameters in the True Hspice Device Models Reference Manual Junction Capacitor Parameters Name Alias Unit CIC F CJS CCS F CSUB Default 0 0 0 0 0 0 Star Hspice Quick Reference Guide Definition Base collector zero bias depletion capacitance Base emitter zero bias depletion capacitance Zero bias collector substrate capacitance BUT Element Name Alias FC MIC MC MJE ME MIS ESUB VJC PC VJE PE VIS PS
113. in ohmic resistance Additional drain resistance due to contact resistance Drain resistance length sensitivity Drain resistance length sensitivity Drain resistance product area sensitivity Source ohmic resistance Source resistance length sensitivity Star Hspice Quick Reference Guide Name Alias Unit WRS ohm m PRS ohm m RSC ohm RSH RL ohm sq Default 0 0 0 0 0 MOSFET Element Statement Description Source resistance width sensitivity Source resistance product area sensitivity Additional source resistance due to contact resistance Drain and source diffusion sheet resistance See Using Drain and Source Resistance Model Parameters in the True Hspice Device Models Reference Manual MOS Common Geometry Model Parameters Name Alias Unit HDIF m LD DLAT m LATD LDIF m Default 0 Star Hspice Quick Reference Guide Description Length of heavily doped diffusion Lateral diffusion into channel from source and drain diffusion Length of lightly doped diffusion adjacent to gate MOSFET Introduction Name Alias Unit WMLT XJ m XW WDEL m DW Default Description 1 Width diffusion layer shrink reduction factor Metallurgical junction depth Accounts for masking and etching effects See Using MOS Geometry Model Parameters in the True Hspice Device Models Reference Manual Common Threshold Voltage Parameters Name Alias Unit DE
114. ing factor This option changes the order of specifying MOS element VSIZE from the default order length width to width length See MOSFET Control Options in the Star Hspice Manual DC Solution Control Options Option ABSH x 12 10 Description Sets the absolute current change through voltage defined branches voltage sources and inductors Star Hspice Quick Reference Guide Model Analysis Options Option Description ABSI x Sets the absolute branch current error tolerance in diodes BJTs and JFETs during DC and transient analysis ABSMOS x Current error tolerance used for MOSFET devices in both DC and transient analysis ABSTOL x ABSTOL is an alias for ABSI See ABSI ABSVDC x Sets the absolute minimum voltage for DC analysis DI x Sets the maximum iteration to iteration current change through voltage defined branches voltage sources and inductors KCLTEST Activates the KCL test Kirchhoff s Current Law function MAXAMP x Sets the maximum current through voltage defined branches voltage sources and inductors RELH x Sets relative current tolerance through voltage defined branches voltage sources and inductors RELI x Sets the relative error tolerance change from iteration to iteration to determine convergence for all currents in diode BJT and JFET devices Star Hspice Quick Reference Guide 12 11 Controlling Input Option RELMOS x RELV x RELVDC x ITLI x IT
115. iode Model Default 1 0E 12 1 0E 12 1 00 1 00 1 00 0 40 0 40 0 40 Description Sidewall junction capacitance Gate edge junction capacitance Diffusion voltage of bottom junction Diffusion voltage of sidewall junction Diffusion voltage of gate edge junction Bottom junction grading coefficient Sidewall junction grading coefficient Gate edge junction grading coefficient See Juncap Model Parameters in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide Diodes Star Hspice Quick Reference Guide 724 Chapter 7 BJT Element The topics covered in this chapter are Bipolar Junction Transistors BJTs Element BJT Model Statement BJT Model Parameters LEVEL 6 Philips Bipolar Model 503 and 504 LEVEL 8 HiCUM Model Level 9 VBIC99 Model Level 10 MODELLA Model Level 11 UCSD HBT Model Star Hspice Quick Reference Guide BUT Element Bipolar Junction Transistors BJTs Element General Form Or area AREA area AREAB AREAC DTEMP IC vbeval vceval VBE VCE M mname Qxxx nc nb ne ns mname area OFF lt IC vbeval vceval gt lt DTEMP val gt lt M val gt Qxxx nc nb ne lt ns gt mname lt AREA val gt lt AREAB val gt lt AREAC val gt OFF lt VBE vbeval gt lt VCE vceval gt lt M val gt lt DTEMP val gt Emitter area multiplying factor which affects currents resi
116. is model see LEVEL 59 UC Berkeley BSIM3 SOI FD Model in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 10 35 MOSFET Models BSIM3SOI MOSFET FD Level 59 Template Output Alias Description LV1 Channel length L LV2 Channel width W Area of the drain diode AD LV9 Area of the source diode AS Initial condition for drain source voltage VDS Initial condition for gate source voltage VGS Initial condition for Substrate source voltage VES Threshold voltage bias dependent LV10 Saturation voltage VDSAT LV11 LV12 Drain diode periphery PD Source diode periphery PS LV13 Drain resistance squares RDS LV14 Source resistance squares RSS GDEFF LV16 Effective drain conductance 1 RDeff GSEFF LV17 Effective source conductance 1 RSeff 10 36 Star Hspice Quick Reference Guide LEVEL 59 UC Berkeley BSIM3 SOI FD Model Star Hspice Quick Reference Guide Name Alias Description COVLGS LV36 Gate source overlap and fringing capacitances COVLGD LV37 Gate drain overlap and fringing capacitances COVLGE LV38 Gate substrate overlap capacitances VES LX1 Substrate source voltage VES VGS LX2 Gate source voltage VGS VDS LX3 Drain source voltage VDS CDO LX4 DC drain current CDO CBSO LX5 DC source body diode current CBSO CBDO LX6 DC drain bo
117. ises combination selector NOISE 1 Channel thermal noise SPICE2 model Flicker noise SPICE2 model e NOISE 2 Channel thermal noise HiSIM1 model corresponding to BSIM3 model Flicker noise HiSIMI model e NOISE 3 Channel thermal noise SPICE2 model Flicker noise HiSIMI model 10 50 Star Hspice Quick Reference Guide Level 64 HiSIM1 0 Model Table 10 1 Level 64 Model Selectors Sheet 5 of 5 Parameter Default Star Hspice Quick Reference Guide Description NOISE 4 Channel thermal noise HiSIM1 model corresponding to BSIM3 model Flicker noise SPICE2 model NOISE 5 Channel thermal noise NONE Flicker noise HiSIM1 model MOSFET Models Table 10 2 Level 64 Technological Parameters Parameter Default Description TOX 3 6e 9m oxide thickness XLD 0 0m gate overlap length XWD 0 0m gate overlap width XPOLYD 0 0m difference between gate poly and design lengths TPOLY 0 0m height of the gate poly Si RS 0 0ohm m source contact resistance RD 0 0ohm m drain contact resistance NSUBC 5 94 17 substrate impurity m concentration NSUBP 5 94 17 maxim pocket m concentration VFBC 0 722729 flat band voltage V LP 0 0m pocket penetration length 10 52 Star Hspice Quick Reference Guide Level 64 HiSIM1 0 Model Table 10 2 Level 64 Technological Parameters Continued Parameter Default Description XJ 0 0m junction depth
118. itance Body source voltage not used in Star Hspice releases after 95 3 Drain source charge QDS Drain source charge current CQDS Star Hspice Quick Reference Guide Alias GMBS LX18 MOSFET Name Alias L LV1 W LV2 AD LV3 AS LV4 ICVDS LV5 ICVGS LV6 ICVBS LV7 _ LV8 VTH LV9 VDSAT LV10 PD LV11 Star Hspice Quick Reference Guide 15 31 Element Template Listings Description Drain body backgate transconductance GMBS Description Channel length L Channel width W Area of the drain diode AD Area of the source diode AS Initial condition for drain source voltage VDS Initial condition for gate source voltage VGS Initial condition for bulk source voltage VBS Device polarity 1 forward 1 reverse not used in Star Hspice releases after 95 3 Threshold voltage bias dependent Saturation voltage VDSAT Drain diode periphery PD Output Format Name PS RDS RSS GDEFF GSEFF IDBS ISBS VDBEFF BETAEFF GAMMAEFF DELTAL UBEFF 15 32 Alias LV12 LV13 LV14 LV15 LV16 LV17 LV18 LV19 LV20 LV21 LV22 LV23 LV24 Description Source diode periphery PS Drain resistance squares RDS Source resistance squares RSS Charge sharing coefficient XQC Effective drain conductance 1 RDeff Effective source conductance 1 RSeff Drain bulk saturation current at 1 volt bias Source bulk
119. l G Element Parameters Parameter Description ABS Output is absolute value if ABS 1 CUR equation Current output which flows from n to n DELAY Keyword for the delay element DELTA Used to control the curvature of the piecewise linear corners Gxxx Voltage controlled element name gatetype k May be AND NAND OR or NOR 1 Initial condition in Positive or negative controlling nodes M Number of replications of the element in parallel 11 6 Star Hspice Quick Reference Guide Parameter MAX MIN n NPDELAY NPWL pO pl POLY PWL PPWL SCALE SMOOTH TC1 TC2 TD transconduct ance Voltage and Current Controlled Elements Description Maximum current or resistance value Minimum current or resistance value Positive or negative node of controlled element Sets the number of data points to be used in delay simulations Models the symmetrical bidirectional switch or transfer gate NMOS Polynomial coefficients Polynomial dimension Piecewise linear function keyword Models the symmetrical bidirectional switch or transfer gate PMOS Element value multiplier For piecewise linear dependent source elements SMOOTH selects the curve smoothing method First order and second order temperature coefficients Time delay keyword Voltage to current conversion factor Star Hspice Quick Reference Guide 11 7 Behavior Macromodeling Parameter transfactor V
120. l as do the other Star Hspice MOS LEVELs Like all models in Star Hspice LEVEL 47 can be parameterized This is useful for modeling process skew either by worst case corners or by Monte Carlo For detailed information see LEVEL 47 BSIMG Version 2 MOS Model in the True Hspice Device Models Reference Manual Using BSIM3 Version 2 with Star Hspice Set LEVEL 47 to identify the model as a BSIM3 model The default setting is CAPOP 13 BSIMI charge conserving capacitance model The TNOM model parameter is an alias for TREF for compatibility with SPICE3 The default room temperature is 25 C in Star Hspice but 27 in SPICE3 if BSIM3 model parameters are specified at 27 C use TREF 27 The default of DERIV is zero analytical method if set to 1 finite difference method it gives more accurate derivatives but consumes more CPU time Three ways for the BSIM3 model to calculate Vp User specified K7 and K2 values GAMMAI GAMMA2 VBM and VBX values entered in the MODEL statement User specified NPEAK NSUB XT and VBM values Star Hspice Quick Reference Guide 10 7 MOSFET Models NPEAK and UO can be in meters or centimeters You must enter the parameter NSUB in cm units VTHO for P channel in the MODEL statement is negative The default value of is 0 11 LITL may not go below a minimum value of 1 0e 9 m VSAT after temperature adjustment is not allowed to go below a minimum
121. l gt lt NRB val gt RTHO val lt CTHO val gt lt NBC val gt NSEG val lt PDBCP val gt lt PSBCP val gt lt AGBCP val gt lt AEBCP val gt lt VBSUSR val gt lt TNODEOUT gt off lt BJToff val gt lt IC Vds Vgs Vbs Ves Vps gt AD AEBCP AGBCP AS BJTOFF CTHO 1 L mname Mxxx 10 22 Drain diffusion area Parasitic body to substrate overlap area for body contact Parasitic gate to body overlap area for body contact Source diffusion area Turning off BJT if equal to 1 Thermal capacitance per unit width Initial guess in the order SOI MOSFET channel length in meters Multiplier to simulate multiple SOI MOSFETs in parallel MOSFET model name reference SOI MOSFET element name Star Hspice Quick Reference Guide LEVEL 57 UC Berkeley BSIM3 SOI Model nb Internal body node name or number NBC Number of body contact isolation edge nd Drain terminal node name or number ne Back gate or substrate node name or number ng Front gate node name or number np External body contact node name or number NRB Number of squares for body series resistance NRD Number of squares of drain diffusion for drain series resistance NRS Number of squares of source diffusion for source series resistance ns Source terminal node name or number NSEG Number of segments for channel width partitioning nT Temperature node name or number OFF Sets initial condition to OFF in
122. latforms Platforms including except LEVEL MOSFET Model Description PC PC 50 Philips MOS9 X 53 BSIMG Version 3 Berkeley X MOS 54 BSIM4 Berkeley x 55 EPFL EKV Version 2 6 R X 11 57 UC Berkeley BSIM3 SOI X MOSFET Version 2 0 1 58 University of Florida SOI X Version 4 5 59 UC Berkeley BSIM3 SOI X FD 61 RPT Amorphous Silicon X TFT 62 RPT PolySilicon TFT X 63 Philips MOS11 X 64 HiSIM 1 0 X Star Hspice Quick Reference Guide MOSFET Models Platforms Platforms including except LEVEL MOSFET Model Description not officially released equations are proprietary documentation not provided requires a license and equations are proprietary documentation not provided For detailed information see Selecting MOSFET Model LEVELs in the True Hspice Device Models Reference Manual The remainder of this section provides the general syntax for and basic description of the commonly used MOSFET models LEVEL 47 and higher LEVEL 47 BSIM3 Version 2 MOS Model The Star Hspice LEVEL 47 model uses the general model statement described in MOSFET Model Statement on page 9 3 It also uses the same Model parameters for source drain diode current capacitance and resistance ACM controls the choice of source drain equations Noise equations as the other LEVELs NLEV controls the choice of noise equations 10 6 Star Hspice Quick Reference Guide LEVEL 47 BSIM3 Version 2 MOS Mode
123. lators When comparing to other simulators set the simulation temperature to 27 with TEMP 27 or with OPTIONS TNOM 27 3 The model has its own charge based capacitance model The CAPOP parameter which selects difference capacitance model is ignored in this model 4 The ACM parameter is not supported See Using LEVEL 8 in the True Hspice Device Models Reference Manual 8 16 Star Hspice Quick Reference Guide JFET Model Parameters Materka Model Parameters in Star Hspice DC Model Parameters Name Alias Units Default LEVEL Description Level 8 is the Materka MESFET model ALPHAI Empirical constant VTO Threshold voltage If set it overrides internal calculation A negative is a depletion transistor regardless of NJF or PJF A positive VTO is always an enhancement transistor VP IDSS Pinch off voltage default is calculated Drain saturation current for Vgs 0 GAMMA Star Hspice Quick Reference Guide Voltage slope parameter of pinch off voltage JFET and MESFET Elements Gate Capacitance Model Parameters Name Alias Units Default Description CGS F 0 0 Zero bias gate source junction capacitance CGD F 0 0 Zero bias gate drain junction capacitance PB V 0 8 Gate Junction Potential N 1 0 Emission coefficient for gate drain and gate source diodes 8 18 Star Hspice Quick Reference Guide 724 Chapter 9 MOSFET Introduc
124. me Star Hspice Quick Reference Guide 12 31 Controlling Input type VERSION Selects the model type which must be one of the following AMP operational amplifier model C capacitor model CORE magnetic core model D diode model L magnetic core mutual inductor model NJF n channel JFET model NMOS n channel MOSFET model NPN npnBJT model Star Hspice version number used to allow portability of the BSIM LEVEL 13 BSIM2 LEVEL 39 models between Star Hspice releases Version parameter also valid for LEVEL 49 53 54 57 and 59 See MODEL Statement in the Star Hspice Manual NODESET Statement General Form NODESET V nodel vall Or nodel V node2 val2 gt NODESET nodel vall lt node2 val2 gt Node numbers or node names can include full path names or circuit numbers See NODESET Statement in the Star Hspice Manual 12 32 Star Hspice Quick Reference Guide Statements PARAM Statement General Form PARAM lt ParamName gt lt RealNumber gt See PARAM Statement in the Star Hspice Manual Algebraic Format General Form PARAM ParamName algebraic expression Or PARAM lt ParamName1 gt lt ParamName2 gt Note Quotes around the algebraic expression are mandatory See Algebraic Parameter Equation in the Star Hspice Manual Optimization Format General Form OPTIMIZE opt_pav_fun Or for PARAM element or lt ParamName gt lt OptParamFunc gt
125. me referenced by the associated optimization analysis Parameter to be varied the initial value estimate the lower limit and the upper limit allowed for the parameter See PARAM Statement in the Star Hspice Manual 14 2 Star Hspice Quick Reference Guide MODEL Statement Syntax MODEL Statement Syntax General Form MODEL mname OPT parameter val gt CENDIF Point at which more accurate derivatives are required CLOSE The initial estimate of how close the parameter initial value estimates are to the final solution CUT Modifies CLOSE depending on how successful the iterations toward the solution become DIFSIZ Determines the increment change in a parameter value for gradient calculations Ax DIFSIZ max x 0 1 GRAD Represents a possible convergence when the gradient of the RESULTS function is less than GRAD ITROPT Sets the maximum number of iterations LEVEL Selects the optimizing algorithm to use MAX Sets the upper limit on CLOSE mname Model name PARMIN Allows better control of incremental parameter changes during error calculations Star Hspice Quick Reference Guide 14 3 Optimizing Data RELIN Relative input parameter variation for convergence RELOUT Relative output RESULTS function variance for convergence See MODEL Statement in the Star Hspice Manual Filters and Systems PZ Statement Pole Zero Analysis General Form PZ ov srcnam ov Ou
126. meters YIN Input admittance YOUT Output admittance Output type ZIN Input impedance ZOUT Output impedance See Network in the Star Hspice User Guide 15 20 Star Hspice Quick Reference Guide Element Template Output Noise and Distortion General Form ovar lt z gt Note See Nodal Voltage on page 15 18 for specific output types ovar Noise and distortion analysis parameter z Output type only for distortion See Noise and Distortion in the Star Hspice Manual Element Template Output Use for DC AC or Transient Analysis General Form Elname Property Elname Name of the element Property Property name of an element such as a user input parameter state variable stored charge capacitance current capacitance or derivative of a variable See Element Template Output in the Star Hspice Manual Element Template Listings Resistor Name Alias Description G LV1 Conductance at analysis temperature R LV2 Resistance at reference temperature Star Hspice Quick Reference Guide 15 21 Output Format Name Alias TCI LV3 TC2 LV4 Capacitor Name Alias CEFF LV1 IC LV2 Q 1 0 CURR LXI VOLT LX2 LX3 Inductor Name Alias LEFF LV1 IC LV2 FLUX 1 0 VOLT LXI CURR LX2 15 22 Description First temperature coefficient Second temperature coefficient Description Computed effective capacitance Initial condition Charge stored in capacitor Current flowing through capacit
127. mines the timestep in the algorithms used for transient analysis simulations Selects the timestep algorithm used for transient analysis Sets the maximum order of integration when the GEAR method is used see METHOD Sets the numerical integration method used for a transient analysis to either GEAR or TRAP The coefficient for trapezoidal integration Limits output to post analysis tools such as Cadence or Zuken to only the TRAN timestep intervals Prints output variables at their internal timepoint values 1221 Controlling Input Option MEASFAIL MEASSORT PUTMEAS TRCON x UNWRAP Description Writes out 0 or 1 to mt ms or ma file and failed to listing file when measure statement fails Helps you automatically sort large numbers of measure statements Allows user to control the output variables listed in the measure statement Controls autospeedup and autoconvergence for transient analysis Displays phase results in AC analysis in unwrapped form with a continuous phase plot See Transient and AC Small Signal Analysis Options in the Star Hspice Manual Statements Star Hspice supports the following statements ALTER Statement General Form ALTER title string See ALTER Statement in the Star Hspice Manual 12 22 Star Hspice Quick Reference Guide Statements Comments General Form lt Comment on a line by itself gt O
128. mname lt lt lt AREA gt area lt W val lt L val gt gt OFF lt 1 vdsval vgsval gt lt M val gt lt DTEMP val Or Jxxx nd ng ns lt nb gt mname lt lt lt AREA gt area lt W val lt L val gt gt OFF lt VDS vdsval gt lt VGS vgsval gt lt M val lt DTEMP val Star Hspice Quick Reference Guide 8 1 DTEMP IC vdsval vgsval VDS VGS Jxxx L M mname nb nd ng ns OFF JFET and MESFET Elements Area multiplying factor that affects the BETA RD RS IS CGS and CGD model parameters The difference between the element temperature and the circuit temperature in Celsius Initial internal drain source voltage vdsval and gate source voltage vgsval JFET or MESFET element name FET gate length in meters Multiplier to simulate multiple JFETs or MESFETs in parallel JFET or MESFET model name reference Bulk terminal node name which is optional Drain terminal node name Gate terminal node name Source terminal node name Sets initial condition to OFF for this element in DC analysis FET gate width in meters Star Hspice Quick Reference Guide JFET and MESFET Model Statements JFET and MESFET Model Statements General Form MODEL mname NJF lt LEVEL val gt pnamel vall Or MODEL mname PJF lt LEVEL val gt pnamel vall LEVEL The LEVEL parameter s
129. n to substrate capacitance CBEBO LX38 CBEBO dQb dVe intrinsic floating body to substrate capacitance CEEBO LX39 CEEBO dQe dVe intrinsic substrate capacitance CEGBO LX40 CEGBO dQe dVg intrinsic substrate to gate capacitance CEDBO LX41 CEDBO dQe dVd intrinsic substrate to drain CESBO LX42 CESBO dQe dVs intrinsic substrate to source capacitance VBS LX43 Body source voltage VBS ICH 1 44 Channel current IBJT 1 45 Parasitic BJT collector current LX46 Impact Ionization current Star Hspice Quick Reference Guide 10 39 MOSFET Models Alias Description IGIDL LX47 GIDL current ITUN LX48 Tunneling current Qbacko LX49 Internal body charge Ibp LX50 Body contact current Sft LX51 Value of the temperature node with shmod 1 VBFLOAT LX52 Internal body node voltage if terminal is not specified Rbp LX53 Combination of rbody and rhalo IGB LX54 Gate tunneling current Qs 1 55 Source charge CQs LX56 Source charge current CGEBO LX57 CGEBO dQg dVe intrinsic gate to substrate capacitance CSSBO LX58 CSSBO dQs dVs intrinsic source capacitance CSGBO LX59 CSGBO dQs dVg intrinsic source to gate capacitance CSDBO LX60 CSDBO dQs dVd intrinsic source to drain capacitance CSEBO LX61 CSEBO dQs dVe intrinsic source to substrate capacita
130. nalysis Capacitance Element and circuit temperature difference Resistor length Multiplier used to simulate parallel resistors Model name Star Hspice Quick Reference Guide Capacitors nl Positive terminal node name n2 Negative terminal node name R Resistance Rxxx Resistor element name SCALE Element scale factor for resistance and capacitance TCI First order temperature coefficient TC2 Second order temperature coefficient user defined be a function of any node voltages equation element currents temperature frequency and time W Resistor width Wire RC Model General Form MODEL mname R keyname value keyname Any model parameter name mname Model name R Specifies a wire model See Wire RC Model in the True Hspice Device Models Reference Manual Capacitors See Capacitors in the Star Hspice Manual Star Hspice Quick Reference Guide 3 3 Passive Devices and Independent Sources Capacitor Element General Form Cxxx nl n2 lt mname gt capval lt TC1 gt Or lt TC2 gt gt SCALE val lt IC val gt lt M val gt lt W val gt lt L val gt lt DTEMP val gt Cxxx nl n2 lt mname gt C val lt TC1l val gt lt TC2 val gt lt IC val gt lt M val gt lt W val gt lt L val gt lt DTEMP val gt Cxxx nl n2 C user s defined equation CTYPE 0 or 1 If a model is chosen for the capacitor then the specifications of capval are optional Cxx
131. nce 10 40 Star Hspice Quick Reference Guide LEVEL 60 UC Berkeley BSIM3 SOI DD Model LEVEL 60 UC Berkeley BSIM3 SOI DD Model General Form Mxxx nd ng ns ne np mname Mxxx nd ng ns ne np mname L w M AD AS lt L val gt lt W val gt lt M val gt lt AD val gt lt AS val gt lt PD val gt lt PS val gt lt NRD val gt lt NRS val gt lt RHT0 val gt lt NRB val gt lt CTH0 val gt lt off gt lt BJToff val gt lt IC Vds Vgs Vbs Ves Vps gt SOI MOSFET element name Drain terminal node name or number Front gate node name or number Source terminal node name or number Back gate or substrate node name or number External body contact node name or number MOSFET model name reference SOI MOSFET channel length in meters SOI MOSFET channel width in meters Multiplier to simulate multiple SOI MOSFETs Drain diffusion area Source diffusion area Star Hspice Quick Reference Guide 10 41 MOSFET Models PD PS NRD NRS NRB RDC RSC RTHO CTHO OFF BJTOFF 1 Drain junction perimeter including channel edge Source junction perimeter including channel edge Number of squares of drain diffusion for drain series resistance Number of squares of source diffusion for source series diffusion Number of squares for body series resistance Additional drain resistance due to contact resistance with units of ohms Additional source resistance
132. nce Guide LEVEL 54 BSIM 4 0 Model Gate charge current CQG Channel charge QD Channel charge current CQD CGGBO dQg dVg intrinsic gate capacitance CGDBO dQg dVd intrinsic gate to drain capacitance CGSBO dQg dVs intrinsic gate to source capacitance CBGBO dQb dVg intrinsic bulk to gate capacitance CBDBO dQb dVd intrinsic bulk to drain capacitance CBSBO dQb dVs intrinsic bulk to source capacitance Drain bulk charge QBD Source bulk charge QBS Bias dependent Bulk source capacitance Bias dependent Bulk drain capacitance CDGBO dQd dVg intrinsic drain to gate capacitance CDDBO dQd dVd intrinsic drain capacitance CDSBO dQd dVs intrinsic drain to source capacitance Gate to Source Current Gate to Drain Current Effective channel width 10 17 MOSFET Models leff weffcv leffcv igbo igcso igcdo iimi igidlo igdt igc igbacc igbinv vfbsd vgse vox rdv TSV cap bsz 10 18 LX63 LX64 LX65 LX66 LX67 LX68 LX69 LX70 LX71 LX72 LX73 LX74 LX75 LX76 LX77 LX78 LX79 LX80 Effective channel length Effective channel width for CV Effective channel length for CV Gate to Substrate Current Igb Igbacc Igbinv Source Partition of Igc Drain Partition of Igc Impact ionization current Gate induced drain leakage current Gate Dielectric Tunneling Current Ig Igs Igd Igc Igb Gate to Channel Current Igc Igcs Igcd Determined by ECB Electron tunn
133. nce Guide 6 1 Diodes DTEMP Dxxx IC vd LM LP M mname nminus nplus OFF PJ W WM The difference between the element temperature and the circuit temperature in Celsius Diode element name Initial voltage across the diode element Length of the diode in meters diode model LEVEL 3 only Width of metal capacitor in meters for diode model LEVEL 3 only Length of polysilicon capacitor in meters for diode model LEVEL 3 only Multiplier to simulate multiple diodes in parallel Diode model name reference Negative terminal cathode node name Positive terminal anode node name Sets initial condition to OFF for this element in DC analysis Periphery of junction Width of the diode in meters diode model LEVEL 3 only Width of metal capacitor in meters for diode model LEVEL 3 only Star Hspice Quick Reference Guide Junction Model Statement WP Width of polysilicon capacitor in meters for diode model LEVEL 3 only See Diode Element in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Junction Model Statement General Form MODEL mname D LEVEL val lt keyword val gt mname Model name D Identifies a diode model LEVEL LEVEL 1 Junction diode LEVEL 2 Fowler Nordheim diode LEVEL 3 Geometric processing for junction diode keyword Model parameter keyword such as CJO or IS See Using the Junction Model Statement in Ch
134. nch through voltage See Collector Substrate Depletion Capacitance in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 7 39 BJT Element Substrate Coupling Network Parameter Unit Default Description RSU Ohm 0 Substrate series resistance CSU F 0 Substrate capacitance from permittivity of bulk material See Substrate Coupling Network in the True Hspice Device Models Reference Manual Noise Parameters Parameter Unit Default Description KF 1 43e 8 Flicker noise factor no unit only for AF 2 AF 2 0 Flicker noise exponent factor KRBI 1 17 Factor for internal base resistance See Noise Parameters in the True Hspice Device Models Reference Manual Temperature Dependence Parameter Unit Default Description VGB V 1 17 Bandgap voltage 7 40 Star Hspice Quick Reference Guide Parameter Unit Default ALB I K 63e 3 ALTO IK 0 KTO 0 ZETACI 1 6 ALVS 1 K le 3 ALCES VK 0 4 3 ZETARBI 588 ZETARBX 0 2060 ZETARCX 0 2230 ZETARE 0 Star Hspice Quick Reference Guide LEVEL 8 HiCUM Model Description Relative temperature coefficient of forward current gain First order relative temperature coefficient of TEFO Second order relative temperature coefficient of TEFO Temperature exponent factor RCIO Relative temperature coefficient of saturation drift velocity Relative temperature coefficient of VCES Temperature exponent fa
135. nit LG M DTA TR c VR v JSGBR Am2 JSDBR Am2 JSGSR Am JSDSR Am Level 4 JUNCAP Diode Model Default 0 0 0 0 25 0 0 1 0E 3 1 0E 3 1 0E 3 1 0E 3 Star Hspice Quick Reference Guide Description Length of side wall of diffusion area AB which is under gate Default deviates from Philips JUNCAP 1 0e 6 Temperature offset of Juncap element Pre determined temp parameters Pre determined voltage parameters Bottom saturation current density due to electron hole Bottom saturation current density due to back contact Sidewall saturation current due to electron hole Sidewall saturation current due to back contact 6 15 Diodes Name Alias Unit JSGGR JSDGR JSGGR JSDGR NB NS NG VB CJBR 16 16 Am Am Am Am Fm Default Description 1 0E 3 Gate edge saturation current due to electron hole 1 0E 3 Gate edge saturation current due to back contact 1 0E 3 Gate edge saturation current due to electron hole 1 0E 3 Gate edge saturation current due to back contact 1 0 Emission coefficient of bottom forward current 1 0 Emission coefficient of sidewall forward current 1 0 Emission coefficient of gate edge forward current 0 9 Reverse breakdown voltage 1 0E 12 Bottom junction capacitance Star Hspice Quick Reference Guide Name Alias Unit CJSR Em CIGR Fm VDBR v VDSR v VDGR v PB PS PG Level 4 JUNCAP D
136. ns Revised 2 December 1999 by Robert B Hallgren and David S Smith Parameter Descriptions Parameter Description Units Default LEVEL Model Index 7 for 1 TOM3 TNOM Reference temperature VTO Threshold voltage VTOTC Threshold voltage temperature coefficient ALPHA Saturation factor BETA Transconductance parameter LAMBDA Channel length modulation parameter VBI Gate diode built in V 1 potential 8 12 Star Hspice Quick Reference Guide Parameter Description JFET Model Parameters Units Default CDS Drain to source capacitance F 1E 12 IS Forward gate diode saturation current A 1E 14 KF Flicker noise coefficient AF Flicker noise exponent GAMMA Drain voltage induced threshold voltage lowering coefficient EG Parameter Q to model the non square law of the drain current Barrier height at OK used for capacitance model XTI Diode saturation current temperature coefficient VST Sub threshold slope Star Hspice Quick Reference Guide 8 13 JFET and MESFET Elements Parameter Description Units Default ALPHATCE ALPHA K 1 0 temperature coefficient exponential ILK Leakage diode A 0 current parameter PLK Leakage diode V 1 potential parameter K Knee function 2 parameter VSTTC Linear temperature VK 1 0 coefficient of VST QGQL Charge parameter FV 5
137. nt srcnam Input source an independent voltage or current source name See PZ Statement Pole Zero Analysis in the Star Hspice Manual SENS Statement DC Sensitivity Analysis General Form SENS ov1 ov2 gt ovl ov2 Branch currents or nodal voltage for DC component sensitivity analysis See SENS Statement DC Sensitivity Analysis in the Star Hspice Manual 13 4 Star Hspice Quick Reference Guide AC Analysis Statement DC Small Signal Transfer Function Analysis General Form TF ov srcnam ov Small signal output variable srcnam Small signal input source See Statement DC Small Signal Transfer Function Analysis in the Star Hspice Manual AC Analysis AC Statement Single Double Sweep General Form AC type np fstart fstop Or type np fstart fstop lt SWEEP var START start lt STOP gt stop lt STEP gt incr gt Or type np fstart fstop lt SWEEP var START param_expr1 STOP param expr2 STEP param_expr3 gt Or type np fstart fstop lt SWEEP var START param_expr1 STOP param expr2 STEP param_expr3 gt Or type np fstart fstop lt SWEEP var start_expr stop_expr step_expr gt See AC Statement in the Star Hspice Manual Star Hspice Quick Reference Guide 13 55 Analyzing Data Parameterized Sweep General Form AC type np fstart fstop lt SWEEP DATA datanm gt
138. odulation index that determines the magnitude of deviation from the carrier frequency Star Hspice Quick Reference Guide 3 13 5 oc per PULSE PV pw PWL sa SFFM SIN zl t1 t2 tn 9 14 Passive Devices and Independent Sources Offset constant a unitless constant that determines the absolute magnitude of the modulation Pulse repetition period in seconds Keyword for a pulsed time varying source Parameter name for amplitude value provided ina DATA statement Pulse width the width of the plateau portion of the pulse in seconds Keyword for a piecewise linear time varying source Damping factor in units of 1 seconds Signal amplitude in volts or amps Keyword for a single frequency frequency modulated time varying source Keyword for a sinusoidal time varying source Rise time constant in seconds Timepoint values where the corresponding current or voltage value is valid Fall time constant in seconds Delay time in seconds Duration of the recovery ramp in seconds from the pulse plateau back to the initial value forward transit time Star Hspice Quick Reference Guide TIME vl v2 vn va vo Vxxx xxx Star Hspice Quick Reference Guide 3 15 Independent Sources Parameter name for time value provided in a DATA statement Duration of the onset ramp in seconds from the initial value to the pulse plateau value reverse transit time Current or voltage
139. omial General Form Gxxx n n VCR POLY ndim 1 inl lt inndim inndim gt lt MAX val gt MIN val SCALE val lt M val gt lt TCl val gt lt TC2 val gt p0 pl lt IC vals gt Piecewise Linear General Form Gxxx n n VCR PWL 1 in in DELTA val lt SCALE val gt lt M val gt lt TCl val gt lt TC2 val gt x1 y1 x2 y2 x100 y100 lt IC val gt lt SMOOTH val gt Or Gxxx n n VCR NPWL 1 in in DELTA val lt SCALE val gt lt M val gt lt TCl val gt lt TC2 val gt xl yl x2 y2 x100 y100 lt IC val gt lt SMOOTH val gt Or n n VCR PPWL 1 in lt DELTA val gt lt SCALE val gt lt M val gt lt TCl val gt lt TC2 val gt x1 y1 x2 y2 x100 y100 lt IC val gt lt SMOOTH val gt Multi Input Gates General Form VCR gatetype k inl inl ink ink lt DELTA val gt lt TCl val gt lt TC2 val gt lt SCALE val gt lt M val gt 1 1 100 100 lt IC val gt Star Hspice Quick Reference Guide 11 5 Behavior Macromodeling See Voltage Controlled Resistor VCR in the Star Hspice Manual Voltage Controlled Capacitors VCCAP General Form n n VCCAP PWL 1 in in DELTA val lt SCALE val gt M val lt TCl val gt lt TC2 val gt 1 1 2 2 100 100 lt IC val gt SMOOTH val See Voltage Controlled Capacitor VCCAP in the Star Hspice Manua
140. onds to TREF in other LEVELs in Star Hspice The default for TR is 21 0 C to match the Philips simulator 10 10 Star Hspice Quick Reference Guide LEVEL 54 BSIM 4 0 Model The model has its own charge based capacitance model CAPOP is ignored for this model The model uses analytical derivatives for the conductances DERIV is ignored for this model DTEMP can be used with this model Since defaults are non zero every model parameter listed in LEVEL 50 Model Parameters table should be set in the MODEL statement Select one of two available parasitic junction diode models ACM and JUNCAP JUNCAP 1 selects the Philips JUNCAP model JUNCAP 0 default selects the Star Hspice ACM model See Using the Philips MOS9 Model in Star Hspice in the True Hspice Device Models Reference Manual LEVEL 54 BSIM 4 0 Model General Form Mxxx nd ng ns lt nb gt mname lt L val gt lt W val gt lt M val gt lt AD val gt lt AS val gt lt PD val gt lt PS val gt lt RGATEMOD val gt lt RBODYMOD val gt TRNOSMOD val lt ACNQSMOD val gt lt GEOMOD val gt lt RGEOMOD val gt lt NRS val gt lt NRD val gt lt RBPB val gt lt RBPD val gt lt RBPS val gt lt RBDB val gt lt RBSB val gt lt NF val gt lt MIN val gt lt RDC val gt lt RSC val gt lt DELVTO val gt lt MULUO val gt lt DELK1 val gt lt DELNFCT val gt lt OFF gt lt IC Vds Vgs Vbs gt Star Hspice Quick Reference Guide 10 11
141. ontact potentials interacts with TLEV First order temperature coefficient for MJ Second order temperature coefficient for MJ Temperature coefficient for PB Temperature coefficient for PHP Model reference temperature LEVEL 1 or 3 only Resistance temperature coefficient First order temperature coefficient for TT Second order temperature coefficient for TT Diodes Name Alias Unit Default Description XTI 3 0 Saturation current temperature exponent See Setting Temperature Effect Parameters LEVEL 1 and 3 in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Fowler Nordheim Diode See Using the Fowler Nordheim Diode in Chapter 3 Diodes in the True Hspice Device Models Reference Manual Fowler Nordheim Tunnel Diode Element LEVEL 2 Dxxx nplus nminus mname lt W val Form lt L val gt gt lt WP val gt lt OFF gt lt IC vd gt lt M val gt Dxxx Diode element name nplus Positive terminal anode node name nminus Negative terminal cathode node name mname Model name OFF Sets initial condition to OFF in DC analysis Default ON IC vd Initial voltage across this element M Multiplier factor to simulate multiple diodes 6 10 Star Hspice Quick Reference Guide Fowler Nordheim Diode Width of diode in units of meter Overrides W in the LEVEL 2 model Default 0 0 Length of diode in units of meter Overrides L in the LEVEL 2 model Def
142. or Voltage across capacitor Capacitance not used in Star Hspice releases after 95 3 Description Computed effective inductance Initial condition Flux in the inductor Voltage across inductor Current flowing through inductor Star Hspice Quick Reference Guide Element Template Listings Name Alias Description LX4 Inductance not used in Star Hspice releases after 95 3 Mutual Inductor Name Alias Description K LVI Mutual inductance Voltage Controlled Current Source Name Alias Description CURR LXO Current through the source if VCCS R Resistance value if VCR C Capacitance value if VCCAP CV LXI Controlling voltage CQ LXI Capacitance charge if VCCAP DI LX2 Derivative of source current with respect to control voltage ICAP LX2 Capacitance current if VCCAP VCAP LX3 Voltage across capacitance if VCCAP Star Hspice Quick Reference Guide 1523 Output Format Voltage Controlled Voltage Source Name Alias Description VOLT LXO Source voltage CURR LXI Current through source CV LX2 Controlling voltage DV LX3 Derivative of source voltage with respect to control current Current Controlled Current Source Name Alias Description CURR LXO Current through source CI LXI Controlling current DI LX2 Derivative of source current with respect to control current Current Controlled Voltage Source Name Alias Description VOLT LXO Source voltage CURR LXI Source current CI LX2 Controllin
143. or Elements General Form Cxxx nl n2 POLY c0 c1 lt IC v gt 1 1 nl n2 POLY Coefficients of a polynomial described as a function of the voltage across the capacitor Capacitor element name Initial voltage across capacitor in volts Node names Keyname to identify capacitor as nonlinear polynomial See Capacitors in the Star Hspice Manual Inductors See Inductors in the Star Hspice Manual Linear Inductor Element General Form cO cl DTEMP Lxxx nl n2 L inductance lt lt TCl gt val gt TC2 val SCALE val lt IC val gt lt M val gt lt DTEMP val gt lt R val gt Lxxx nl n2 L equation lt LTYPE val gt above options Coefficients of a polynomial in current describing the inductor value Temperature difference between the element and the circuit in Celsius Star Hspice Quick Reference Guide 1 L inductance L equation LTYPE M NT turns POLY R SCALE TCI TC2 Inductors Initial current in amperes Inductance value Inductance at room temperature Determines inductance flux calculation for elements with inductance equations Multiplier used to simulate parallel inductors Number representing the number of turns of an inductive magnetic winding Keyword to specify inductance given by a polynomial Resistance of inductor in ohms Element scale parameter scales inductance b
144. ower onloff buffer 12loutput_ecl xv_pu state_pu xv_pd state_pd interpol 1121 ramp fwfz 011I2 ramp rwfz 01l112 fwf tune fwf tune value rwf tune rwf tune value nowarn c com pu c com pu value c com _ com pc value c com gc c com gc value See Output ECL Buffer in the True Hspice Device Models Reference Manual Tristate ECL Buffer Syntax B 3state ecl nd pu nd out nd in nd en nd pc nd gc file file_name model model_name typ typlminImaxlfastlslow power onloff buffer 14lthree state eclj xv_pu state_pu xv pd state pd interpolz 112 ramp fwfz 011I2 ramp rwfz 01112 fwf tune fwf tune value rwf tune rwf tune value nowarn c com pu c com pu value 5 6 Star Hspice Quick Reference Guide Differential Pins c_com_pc c_com_pc_value c_com_gc c_com_gc_value See Tristate ECL Buffer in the True Hspice Device Models Reference Manual Input Output ECL Buffer Syntax B io ecl nd pu nd out nd in nd en nd out of in nd pc nd gc file file_name model model_name typ typlminImax fastlslow power onloff bufferz 13lio eclj puzstate pu xv pd state pd interpolz 112 ramp fwfz 0I1I2 ramp rwfz 01112 Input Output ECL Buffer See Input Output ECL Buffer in the True Hspice Device Models Reference Manual Differential Pins For detailed information
145. part of the base resistance Zero bias value of the variable part of the base resistance Constant part of the collector resistance Resistance of the un modulated epilayer Space charge resistance of the epilayer Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model Resistance and Epilayer Parameters Level 504 Parameters Unit Default Description IHC A 4 0e 3 Critical current for velocity saturation in the epilayer AXI 0 3 Smoothness parameter for the onset of quasi saturation Base Emitter Capacitances Level 504 Parameters Unit Default Description 7 3e 14 Zero bias emitter base depletion capacitance VDE V 0 95 Emitter base diffusion voltage PE 0 4 Emitter base grading coefficient XCJE 0 4 Fraction of the emitter base depletion capacitance that belongs to the sidewall CBEO F 0 0 base emitter extrinsic capacitance Star Hspice Quick Reference Guide 7 23 1 LI LI BUT Element Base Collector Capacitances Level 504 Parameters Unit Default Description CJC F 7 8e 14 7 bias collector base depletion capacitance VDC V 0 68 Collector base diffusion voltage PC 0 5 Collector base grading coefficient XP 0 35 Constant part of CJC MC 0 5 Coefficient for the current modulation of the collector base depletion capacitance XCJC 3 2e 2 Fraction of the collector base depletion capacitance under the emitter CBCO F 0 0 base collector extrinsic cap
146. quested is assumed Initial value for the func calculation Type of the measure statement AVG average MAX maximum MIN minimum peak to peak RMS root mean squared Desired MEASURE value If the absolute value of GOAL is less than MINVAL the GOAL value is replaced by MINVAL in the denominator of the ERRfun expression Name of any output variable whose function is to be measured in the simulation Name associated with the measured value in the Star Hspice output End of the func calculation The calculated error is multiplied by the weight value Star Hspice Quick Reference Guide Print Commands See Average RMS MIN MAX INTEG and PP in the Star Hspice User Guide Equation Evaluation General Form MEASURE lt DCITRANIAC gt result PARAM equation lt GOAL val gt lt MINVAL val See Equation Evaluation in the Star Hspice User Guide ERROR Function General Form MEASURE DCIACITRAN result ERRfun meas var calc var MINVAL val lt IGNORE YMIN val lt YMAX val WEIGHT val FROM val TO val DCIACITRAN Analysis type of the measurement If omitted the last analysis mode requested is assumed calc var Name of the simulated output variable or parameter in the MEASURE statement to be compared with meas var ERRfun ERRfun indicates which error function to use ERR ERRI ERR2 or
147. r lt HSPICE statement gt lt comment following HSPICE input gt See Comments in the Star Hspice Manual ALIAS Statement You can alias one model name to another alias pal parl During simulation this alias statement indicates to use the parl model in place of a reference to a previously deleted pal model See ALIAS Statement in Chapter 3 of the Star Hspice Manual CONNECT Statement This statement connects two nodes in your Star Hspice netlist so that simulation evaluates the two nodes as only one node Both nodes must be at the same level in the circuit design that you are simulating you cannot connect nodes that belong to different subcircuits Syntax connect nodel node2 DATA Statement See DATA Statement in the Star Hspice Manual Star Hspice Quick Reference Guide 12 235 Controlling Input Inline DATA Statement General Form datanm pnaml pnam2 pnam3 pnamxxx gt pvall lt pval2 pval3 pvalxxx gt pvall lt pval2 pval3 pvalxxx gt ENDDATA See Inline DATA Statement in the Star Hspice Manual External File DATA Statement General Form DATA datanm MER FILE filename pnamel colnum panme2 colnum gt FILE filename pnamel colnum pname2 colnum gt gt lt OUT fileout gt ENDDATA See External File DATA Statement in the Star Hspice Manual Column Laminated DATA Statement
148. r Default Description KF 0 0 SPICE2 flicker noise coefficient EF 0 0 SPICE2 flicker noise frequency exponent Table 10 14 Conserving Symmetry at V4 0 for Short Channel MOSFETS Parameter Default Description VZADDO 1 0e 2V symmetry conservation coefficient PZADDO 1 0e 3V symmetry conservation coefficient To turn off model effects use the following settings Short Channel Effect Star Hspice Quick Reference Guide SC1 SC2 SC3 0 Reverse Short Channel Effect LP 0 Quantum Mechanical Effect QME2 QME3 0 Poly Depletion Effect PGDI PGD2 PGD3 0 Channel Length Modulation CLMI CLM2 CLM3 0 Narrow Channel Effect WFC 2 0 10 61 MOSFET Models 10 62 Star Hspice Quick Reference Guide 724 Chapter 1 1 Behavior Macromodeling The topics covered in this chapter are Subcircuit Macros Voltage and Current Controlled Elements Star Hspice performs the following types of behavioral modeling Subcircuit Macros SUBCKT or MACRO Statement General Form SUBCKT subnam nl n2 n3 gt parnam val gt Or MACRO subnam nl n2 n3 gt parnam val gt nl Node name for external reference parnam A parameter name set to a value or another parameter subnam Reference name for the subcircuit model call See SUBCKT or MACRO Statement in the Star Hspice Manual Star Hspice Quick Reference Guide 11 1
149. r Star Hspice Release H9007D Star Hspice Quick Reference Guide Model Analysis Options See Version Options in the Star Hspice Manual Model Analysis Options See Model Analysis Options in the Star Hspice Manual General Options Option Description DCAP The DCAP option selects the equations used in calculating the depletion capacitance for LEVEL 1 and 3 diodes and BJTs hier scale Defines how Star Hspice interprets the 5 parameter either as a user defined parameter or a Star Hspice scale parameter SCALE Element scaling factor TNOM The reference temperature for the simulation See General Options in the Star Hspice Manual MOSFET Control Options Option Description CVTOL Changes the number of numerical integration steps in the calculation of the gate capacitor charge for a MOSFET using CAPOP 3 DEFAD Default value for MOSFET drain diode area DEFAS Default value for MOSFET source diode area Star Hspice Quick Reference Guide 12 9 Ll LI DEFL DEFNRD DEFNRS DEFPD DEFPS DEFW SCALM WL Controlling Input Description Default value for MOSFET channel length Default value for the number of squares for the drain resistor on a MOSFET Default value for the number of squares for the source resistor on a MOSFET Default value for MOSFET drain diode perimeter Default value for MOSFET source diode perimeter Default value for MOSFET channel width Model scal
150. s collector substrate depletion capacitance Collector substrate diffusion voltage Collector substrate grading coefficient Band gap voltage of the substrate For a closed buried layer ASZAC For an open buried layer AS AEPI LEVEL 6 Philips Bipolar Model MEXTRAM LEVEL 504 The following tables describe MEXTRAM Level 504 as LEVEL 6 model parameters including parameter name unit default value description and notes For more detailed information see LEVEL 6 Philips Bipolar Model MEXTRAM LEVEL 504 in the True Hspice Device Models Reference Manual 7 18 Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model Parameters noted with a are not used in the DC model Flags Level 504 Parameters LEVEL VERS EXMOD EXPHI EXAVL TREF SUBS Unit C Default 6 504 25 0 Star Hspice Quick Reference Guide Description Model level Flag for choosing MEXTRAM model level 503 or 504 Flag for extended modeling of the reverse current gain Flag for distributed high frequency effects in transient Flag for extended modeling of avalanche currents Reference temperature Flag for substrate effect subs l applies substrate effect subs 0 does not apply substrate effect 7 19 BUT Element Basic Parameters Level 504 Parameters Unit Default Description IS A 2 2e 17 Collector emitter saturation current VER 2 5 Reverse early voltage VEF 44
151. s simulator 5 The model has its own charge based capacitance model The CAPOP parameter which selects different capacitance models is ignored in this model 6 The model uses the analytical derivatives for the conductances The DERIV parameter which selects the finite difference method is ignored in this model 7 DTEMP can be used with this model It is set on the element line and increases the temperature of individual elements relative to the circuit temperature 8 Since defaults are nonzero it is strongly recommended that every model parameter listed in Level 63 Model Parameters table be set in the MODEL statement 9 The general syntax for MOSFET element is the same as the other standard MOSFET models other than PS and PD In Level 63 PS and PD are defined as the length of the sidewall of the source drain which is not under the gate 10 MOS11 has LMIN as its own parameter which has the difference definition from that of Star Hspice To avoid the conflict with LMIN in Star Hspice LMIN parameter in HSPICE level 63 was changed to LLMIN 10 46 Star Hspice Quick Reference Guide Level 64 HiSIM1 0 Model Level 64 HiSIM1 0 Model HiSIM Hiroshima university STARC IGFET Model is a publicly available MOSFET model for circuit simulation It uses drift diffusion approximation and a channel surface potential description LEVEL 64 Model Parameters Table 10 1 Level 64 Model Selectors Sheet 1 of 5 Parameter LEVEL
152. se charge at zero bias Factor of the built in field of the base Weak avalanche parameter 743 BUT Element Parameters EFI THC RCC RCV SCRCV SFH RBC RBV RE TAUNE 7 14 Unit ohm ohm ohm ohm ohm ohm Default 0 7 3 e 3 25 750 1000 0 0 6 50 100 2 0 3 e 10 Description Electric field intercept with EXAVL 1 Critical current for hot carriers Constant part of the collector resistance Resistance of the unmodulated epilayer Space charge resistance of the epilayer Current spreading factor epilayer Constant part of the base resistance Variable part of the base resistance at zero bias Emitter series resistance Minimum delay time of neutral and emitter charge Star Hspice Quick Reference Guide LEVEL 6 Philips Bipolar Model Parameters Unit Default MTAU 1 18 CJE F 2 5e 13 VDE V 0 9 PE 0 33 XCJE F 0 5 CJC F 1 3e 13 VDC 0 6 0 4 0 2 Star Hspice Quick Reference Guide Description Non ideality factor of the neutral and emitter charge Zero bias collector base depletion capacitance Emitter base diffusion voltage Emitter base grading coefficient Fraction of the emitter base depletion capacitance that belongs to the sidewall Zero bias collector base depletion capacitance Collector base diffusion voltage Collector base grading coefficient variable part Constant
153. see Differential Pins in the True Hspice Device Models Reference Manual Output buffers logical direction gt inverter of signal oute nen ffer input for m xX output differential buffer ins output K P buffer T transmission line Star Hspice Quick Reference Guide 5 7 IBIS Conventions Input buffers lt logical direction of signal transmission lin out_of_in_ e _ output _1 viz m buffer w xX differential output pins out_of_in_2 e spam nd in 2 Scaling Buffer Strength Sometimes you need to scale buffer strength to enable the same IBIS file to be used to simulate buffers of different strengths K is the factor for current multiplication for the original buffer the value of K 1 This section describes how to scale using the F Element for a single output buffer and a differential output buffer For detailed information see Scaling Buffer Strength in the True Hspice Device Models Reference Manual Original Circuit for a Single Output Buffer Buffer nd pu nd pd nd out nd pc nd gc file filename model modelname Rload nd out gnd Rload val Scaled Circuit for a Single Output Buffer Buffer nd pu nd pd nd out nd pc nd gc file filename model modelname Vsenser nd out nd out prime V 0 Rload nd out prime gnd Rload val Felement gnd nd out prime Vsenser K 1 158 Star Hspice Quick Reference Guide
154. source capacitance CBGBO dQb dVg intrinsic floating body to gate capacitance CBDBO dQb dVd intrinsic floating body to drain capacitance CBSBO dQb dVs intrinsic floating body to source Star Hspice Quick Reference Guide LEVEL 57 UC Berkeley BSIM3 SOI Model Name Alias Description CAP BS LX28 Extrinsic source to substrate Capacitances CAP BS csbox tcsesw csboxis substrate to source bottom capacitance csesw is substrate to source sidewall capacitance CAP BD LX29 Extrinsic drain to substrate Capacitances CAP BS csbox tcsesw cdbox is substrate to drain bottom capacitance cdesw is substrate to drain sidewall capacitance CDGBO LX32 CDGBO dQd dVg intrinsic drain to gate capacitance CDDBO LX33 CDDBO dQd dVd intrinsic drain capacitance CDSBO LX34 CDSBO dQd dVs intrinsic drain to source capacitance QE LX35 Substrate charge QE CQE LX36 Substrate charge current CQE CDEBO LX37 dQd dVe intrinsic drain to substrate capacitance Star Hspice Quick Reference Guide 10 29 K LI MOSFET Models Name CBEBO CEEBO CEGBO CEDBO CESBO VBS ICH IBJT IGIDL ITUN Qbacko Ibp Sft VBFLOAT Rbp 10 30 Alias LX38 LX39 LX40 LX41 LX42 LX43 LX44 LX45 LX46 LX47 LX48 LX49 LX50 LX51 LX52 LX53 Description CBEBO dQb dVe intrinsic floating body to substrate capacitance CEEBO dQe dVe intrinsic substrate capaci
155. stances and capacitances Base AREA Collector AREA The difference between element and circuit temperature Initial internal base emitter voltage vbeval and collector emitter voltage vceval Multiplier factor to simulate multiple BJTs in parallel BJT model name reference Base terminal node name Collector terminal node name Star Hspice Quick Reference Guide BJT Model Statement ne Emitter terminal node name ns Substrate terminal node name optional OFF Sets initial condition to OFF in DC analysis Qxxx BJT element name See Bipolar Junction Transistors BJTs Element in the Star Hspice Manual BJT Model Statement General Form MODEL mname NPN pnamel vall lt gt Or MODEL mname PNP pnamelz vall Moddname gt NPN Identifies an NPN transistor model pnamel Several model parameters are possible PNP Identifies a PNP transistor model See Understanding the BJT Model Statement in the True Hspice Device Models Reference Manual BJT Model Parameters Basic DC Model Parameters Name Alias Unit Default Definition BF BFM 100 0 Ideal maximum forward BETA Star Hspice Quick Reference Guide 7 3 BUT Element Name Alias BR BRM BULK NSUB IBC EXPLI IBE IS ISS LEVEL NF NR Unit amp amp amp amp amp Default 1 0 0 0 0 0 1 15 0 0 1 0e 16 0 0 1 0 1 0 1 0 Definition Ide
156. t or power Beginning of the output variable waveform to be analyzed End of the output variable waveform to be analyzed An alias for STOP Window type to be used RECT BART HANN HAMM BLACK HARRIS GAUSS KAISER See FFT Statement in the Star Hspice Manual Numerical Integration Algorithm Controls See Numerical Integration Algorithm Controls in the Star Hspice Manual Gear Algorithm General Form OPTION METHOD GEAR Backward Euler General Form OPTION METHOD GEAR MU 0 Trapezoidal Algorithm General Form OPTION METHOD TRAP 13 16 Star Hspice Quick Reference Guide Worst Case Analysis Worst Case Analysis See Worst Case Analysis in the Star Hspice Manual Sigma Deviations Type Param Slow Fast NMOS XL RSH DELVTO TOX XW PMOS XL RSH DELVTO TOX XW See Sigma Deviations in the Star Hspice Manual Monte Carlo Analysis HSPICE statements needed to set up a Monte Carlo analysis are PARAM statement DC AC or TRAN analysis enable MONTE MEASURE statement Star Hspice Quick Reference Guide 13 17 Analyzing Data See Monte Carlo Analysis in the Star Hspice Manual For details about the syntax for these statements see Analysis Syntax in the Star Hspice Manual Operating Point General Form DC MONTE val DC Sweep General Form DC vin 1 5 25 SWEEP MONTE val AC Sweep General
157. t Variables in the Star Hspice Manual Nodal Voltage General Form Vz 1 lt 2 gt z Voltage output type DB Decibel I Imaginary Part M Magnitude 15 18 Star Hspice Quick Reference Guide AC Analysis Output P Phase R Real Part T Group Delay nl n2 Node names If n2 is omitted ground node 0 is assumed See Nodal Voltage in the Star Hspice User Guide Current Independent Voltage Sources General Form Iz Vxxx Voltage source element name Z Current output type See nodal voltage for specific output types See Current Independent Voltage Sources in the Star Hspice User Guide Current Element Branches General Form Izn Wwww n Node position number in the element statement Wwww Element name Z Current output type See nodal voltage for specific output types See Current Element Branches in the Star Hspice User Guide Star Hspice Quick Reference Guide 15 19 Output Format Group Time Delay General Form PRINT AC VT 10 VT 2 25 IT RL PLOT ACITI Q1 IT3 M15 IT D1 Note Since there is discontinuity in phase each 360 degrees the same discontinuity is noticed in the Td even though Td is not discontinued See Group Time Delay in the Star Hspice User Guide Network Output General Form Xij z ZIN z ZOUT z YIN z YOUT z ij i and j can be 1 or 2 X Specifies Z for impedance Y for admittance H for hybrid or S for scattering para
158. t used in Star Hspice releases after 95 3 cbe capacitance cbc internal base collector capacitance CLL Star Hspice Quick Reference Guide Alias CAP_SCB LX21 CAP XBC LX22 CMCMO LX23 VSUB LX24 JFET Name Alias AREA 1 VDS LV2 VGS LV3 PIGD LV16 PIGS LV17 VGS LXO VGD LXI CGSO LX2 Element Template Listings Description csc substrate collector capacitance for vertical transistors csb substrate base capacitance for lateral transistors cbcx external base collector capacitance TF IBE vbc Substrate voltage Description JFET area factor Initial condition for drain source voltage Initial condition for gate source voltage Photo current gate drain in JFET Photo current gate source in JFET VGS Gate drain voltage VGD Gate to source CGSO Star Hspice Quick Reference Guide 15 29 Output Format Name CDO CGDO GMO GDSO GGSO GGDO QGS CQGS QGD CQGD CAP GS CAP GD QDS CQDS 15 30 Alias LX3 LX4 LX5 LX6 LX7 LX8 LX9 LX10 LXII LXI12 LX13 Lx14 LXI5 LX16 LX17 Description Drain current CDO Gate to drain current CGDO Transconductance GMO Drain source transconductance GDSO Gate source transconductance GGSO Gate drain transconductance GGDO Gate source charge QGS Gate source charge current CQGS Gate drain charge QGD Gate drain charge current CQGD Gate source capacitance Gate drain capac
159. t voltage source element name See Independent Source Element in the Star Hspice Manual Independent Sources arguments for the sources in this section follow Amplitude Modulation Source Function on pages 3 13 a 3 10 Star Hspice Quick Reference Guide Independent Sources Pulse Source Function General Form Vxxx n n PU lt LSE gt lt gt v1 v2 td tr tf pw lt per gt gt gt gt gt lt gt Or Ixxx n n PU lt LSE gt lt gt v1 v2 td lt tr tf pw lt per gt gt gt gt gt lt gt See Pulse Source Function in the Star Hspice Manual Sinusoidal Source Function General Form Vxxx n n SIN lt gt vo va freq lt td lt q lt j gt gt gt gt lt gt Or Ixxx n n SIN lt gt vo va lt freq lt td lt q lt j gt gt gt gt lt gt See Sinusoidal Source Function in the Star Hspice Manual Exponential Source Function General Form Vxxx n n EXP lt gt v1 v2 lt tdl lt 1 lt td2 lt t2 gt gt gt gt lt gt Or Ixxx n n EXP lt gt v1 v2 tdl t1 lt td2 lt 12 gt gt gt gt lt gt See Exponential Source Function in the Star Hspice Manual Star Hspice Quick Reference Guide 3 11 Passive Devices and Independent Sources Piecewise Linear Source Function General Form Vxxx n n PWL lt gt tl v1 t2 v2 t3 v3 lt lt repeat gt gt lt TD delay gt lt gt Or Ixxx n n PWL lt gt tl v1 t2
160. tance CEGBO dQe dVg intrinsic substrate to gate capacitance 0QelaVdb CESBO 0Qe 0Vsb Body source voltage VBS Channel current Parasitic BJT collector current Impact Ionization current GIDL current Tunneling current Internal body charge Body contact current Value of the temperature node with shmod 1 Internal body node voltage if terminal is not specified Combination of rbody and rhalo Star Hspice Quick Reference Guide IGB QS CQs CGEBO CSSBO CSGBO CSDBO CSEBO Alias LX54 LX55 LX56 LX57 LX58 LX59 LX60 LX61 LEVEL 57 UC Berkeley BSIM3 SOI Model Description Gate tunneling current Source charge Source charge current CGEBO dQg dVe intrinsic gate to substrate capacitance CSSBO dQs dVs intrinsic source capacitance CSGBO dQs dVg intrinsic source to gate capacitance CSDBO dQs dVd intrinsic source to drain capacitance CSEBO dQs dVe intrinsic source to substrate capacitance See Meyer and Charge Conservation Model Parameters in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 10 31 MOSFET Models LEVEL 58 University of Florida SO Model General Form Mxxx nd ngf ns lt ngb gt mname lt L val gt Wzval lt M val gt lt AD val gt lt AS val gt lt PD val gt lt PS val gt lt NRD val gt lt NRS val gt lt NRB val gt lt RTH val gt lt CTH val gt off lt IC Vds Vg
161. ters Parameter Default Description CLMI 0 3 hardness coefficient of channel contact junction CLM2 0 0 coefficient for contribution CLM3 0 0 coefficient for Qj contribution 10 58 Star Hspice Quick Reference Guide Level 64 HiSIM1 0 Model Table 10 10 Level 64 Substrate Current Parameters Parameter Default Description SUBI 0 0V7 substrate current coefficient 1 SUB2 70 0 substrate current coefficient 2 SUB3 1 0 substrate current coefficient 3 Table 10 11 Level 64 Gate Current Parameters Star Hspice Quick Reference Guide Parameter Default Description GLEAKI 0 0A V Y gate current coefficient 1 GLEAK2 0 0 gate current coefficient 2 GLEAK3 0 0 gate current coefficient 3 10 59 MOSFET Models Table 10 12 Level 64 GIDL Current Parameters Parameter Default Description GIDLI 0 0A m GIDL current coefficient vC 1 GIDL2 0 0v 12 GIDL current coefficient 2 GIDL3 0 0 GIDL current coefficient 3 Table 10 13 Level 64 1 f Noise Parameters Parameter Default Description NFALP 2 0e 15 contribution of the mobility fluctuation NFTRP 1 0e11 ratio of trap density to attenuation coefficient CIT 0 0F cm2 capacitance caused by the interface trapped carriers AF 1 0 SPICE2 flicker noise exponent 10 60 Star Hspice Quick Reference Guide Level 64 HiSIM1 0 Model Table 10 13 Level 64 1 f Noise Parameters Continued Paramete
162. tes one more iterations past convergence for every DC solution and timepoint circuit solution calculated OFF Initializes the terminal voltages of all active devices to zero if they are not initialized to other values RESMIN x Specifies the minimum resistance value for all resistors including parasitic and inductive resistances See DC Operating Point DC Sweep and Pole Zero Options in the Star Hspice Manual Pole Zero Control Options Option Description CSCAL Sets the capacitance scale Capacitances are multiplied by CSCAL FMAX Sets the limit for maximum pole and zero angular frequency value FSCAL Sets the frequency scale Frequency is multiplied by FSCAL Star Hspice Quick Reference Guide 12 155 Controlling Input Option GSCAL LSCAL PZABS PZTOL RITOL XOR XOI XIR X1D X2R X2D Description Sets the conductance scale Sets inductance scale Sets absolute tolerances for poles and zeros Sets the relative error tolerance for poles or Zeros Sets the minimum ratio value for real imaginary or imaginary real parts of the poles or zeros The three complex starting points in the Muller pole zero analysis algorithm See Pole Zero Control Options in the Star Hspice Manual Transient and AC Control Options Option ABSH x ABSV x ACCURATE 12 16 Description Sets the absolute current change through voltage defined branches voltage sources and inductors Same as V
163. this name Any model parameter described below Value assigned to a parameter See Op Amp MODEL Statement Format in the Star Hspice Manual 11 18 Star Hspice Quick Reference Guide 724 Chapter 1 2 Controlling Input This chapter contains abbreviated definitions The topics covered in this chapter are OPTIONS Statement General Control Options Model Analysis Options Statements For complete definitions see the Star Hspice Manual Chapter 3 Specifying Simulation Input and Controls OPTIONS Statement General Form OPTIONS optl opt2 opt3 gt optl Specifies any of the input control options See OPTION Statement in the Star Hspice Manual General Control Options Option Description ACCT Reports job accounting and runtime statistics at the end of the output listing Star Hspice Quick Reference Guide 12 1 Controlling Input Option ACOUT ALT999 ALT9999 ALTCHK BEEP BINPRINT BRIEF NXX CO x 12 2 Description AC output calculation method for the difference in values of magnitude phase and decibels for prints and plots This option generates up to 1000 ALT999 or 10 000 ALT9999 unique output files from ALTER runs By default Star Hspice automatically reports topology errors in the latest elements in your top level netlist It also reports errors in elements that you redefine using the ALTER statement altered netlist BEEP 1 sounds an a
164. tion lt MAX gt val gt lt MIN val gt See Behavioral Voltage Source in the Star Hspice Manual Ideal Op Amp General Form Exxx n n OPAMP in in See Ideal Op Amp in the Star Hspice Manual Star Hspice Quick Reference Guide 11 9 Behavior Macromodeling Ideal Transformer General Form Exxx n n TRANSFORMER in in k See Ideal Transformer in the Star Hspice Manual E Element Parameters Parameter ABS DELAY DELTA Exxx gain gatetype k IC in j MAX MIN n NPDELAY 11 10 Description Output is absolute value if ABS 1 Keyword for the delay element Used to control the curvature of the piecewise linear corners Voltage controlled element name Voltage gain May be AND NAND OR or NOR Initial condition Positive or negative controlling nodes Ideal transformer turn ratio Maximum output voltage value Minimum output voltage value Positive or negative node of controlled element Sets the number of data points to be used in delay simulations Star Hspice Quick Reference Guide Parameter OPAMP PO P1 POLY PWL SCALE TCI TC2 TD TRANS FORMER VCVS x 1 yl Voltage and Current Controlled Elements Description Keyword for ideal op amp element Polynomial coefficients Polynomial dimension Piecewise linear function keyword Element value multiplier First order and second order temperature coefficients Time d
165. tion The topic covered in this chapter is MOSFET Element Statement MOSFET Element Statement General Form Mxxx nd ng ns nb mname L gt length gt lt lt W gt width gt AD val AS val PD val PS val NRD val NRS val RDC val lt RSC val OFF IC vds vgs vbs M val DTEMP val GEO val DELVTO val Or OPTION WL Or Mxxx nd ng ns nb mname width length other options AD Drain diffusion area AS Source diffusion area DELVTO Zero bias threshold voltage shift DTEMP The difference between the element temperature and the circuit temperature in Celsius Star Hspice Quick Reference Guide 9 1 IC vds vgs vbs mname Mxxx nb nd ng NRD NRS ns OFF PD PS MOSFET Introduction Source drain sharing selector for MOSFET model parameter value ACM 3 Initial voltage across the external drain and source vds gate and source vgs and bulk and source terminals vbs MOSFET channel length in meters Multiplier to simulate multiple MOSFETs in parallel MOSFET model name reference MOSFET element name Bulk terminal node name which is optional Drain terminal node name Gate terminal node name Number of squares of drain diffusion for resistance calculations Number of squares of source diffusion for resistance calculations Source terminal node name Sets initial con
166. tion All other trademarks and service marks are the property of their respective owners Contacting Avant Corporation Telephone 510 413 8000 Facsimile 510 413 8080 Toll Free Telephone 800 369 0080 URI q ey http www avanticorp com Avant Corporation 46871 Bayside Parkway Fremont CA 94538 Star Hspice Quick Reference Guide Star Hspice Quick Reference Guide 7 Wand Contents Chapter 1 Introduction 1 1 Syntax Notation aa eee eee toto 1 1 Common Abbreviations 1 2 Input and Output Files eee 1 3 Chapter 2 Discrete Device Library DDL 2 1 DDL USC hte 2 1 DDE ACC6SS rre ree ree edes 2 2 Chapter 3 Passive Devices and Independent Sources 3 1 Statements seis dte m aqu e 3 1 R SISIOTS RR DERE AIEO 3 2 eo e oett eee ba tee tae 3 3 Ind ctots rather en CHER en 3 6 Magnetics utes tinet e rea etes Independent Source Element EX Independent Sources Chapter 4 Transmission Lines W Element Statement Chapter 5 IBIS Conventions 5 1 Buffer Elementin aer nu eT T 5 1 Buffers 5 2 Differential Pins 5 7 Scaling Buffer Strength sess 5 8 Star Hspice Quick Reference Guide Conten
167. tput variable a node voltage V n or branch current I element srcnam Input source an independent voltage or current source name See PZ Statement Pole Zero Analysis in the Star Hspice Manual Laplace Transforms See Laplace Transform LAPLACE Function and Laplace Transform in the Star Hspice Manual Transconductance H s General Form n n LAPLACE in kg kj ky do dy dn lt SCALE val gt lt TC1l val gt lt TC2 val gt lt M val gt 14 4 Star Hspice Quick Reference Guide Laplace Transforms Voltage Gain H s General Form Exxx n LAPLACE in kg kj ky do dj dm lt SCALE val gt lt TC1 val gt lt TC2 val gt Star Hspice Quick Reference Guide 14 5 z Optimizing Data 14 6 Star Hspice Quick Reference Guide 724 Chapter 1 5 Output Format The topics covered in this chapter are Graphing Results in AvanWaves AC Analysis Print Commands DC and Transient Output Power Output AC Analysis Output Element Template Output Element Template Listings For a detailed description of graphing with HSPLOT and GSI see the Star Hspice Manual Chapter 4 Graphing Graphing Results in AvanWaves The option POST must be placed in the Hspice netlist input file POST or 1 creates a binary file POST 2 creates an ascii file portable to all supported machines Star Hspice Quick Reference Guide 15 1 Output
168. ts Chapter 6 Diodes 6 1 Diode Element etit 6 1 Junction Model Statement 6 3 Junction Model Parameters 6 3 Temperature Effects seen 6 7 Fowler Nordheim Diode 6 10 Level 4 JUNCAP Diode Model 6 12 Chapter 7 BJT Element 7 1 Bipolar Junction Transistors BJTs Element 7 2 BJT Model Statement 7 3 BJT Model Parameters 7 3 LEVEL 6 Philips Bipolar Model 7 10 LEVEL 8 HiCUM Mod tl 7 29 Level 9 VBIC99 Model 7 44 Level 10 MODELLA Model 7 47 Level 11 UCSD HBT 7 47 Chapter 8 JFET and MESFET Elements 8 1 General Form for Elements 8 1 JFET and MESFET Model Statements 8 3 JFET Model Parameters 8 3 Chapter 9 MOSFET Introduction 9 1 MOSFET Element Statement 9 1 Chapter 10 MOSFET Models 10 1 Model T
169. ual END Statement General Form END comment comment Any comment normally the name of the data file being terminated See END Statement in the Star Hspice Manual GLOBAL Statement General Form GLOBAL nodel node2 node3 See GLOBAL Statement in the Star Hspice Manual IC DCVOLT Initial Condition Statement General Form v nodel val 1 v node2 val 2 Or DCVOLT V nodel val 1 V node2 val 2 See and DCVOLT Initial Condition Statements in the Star Hspice Manual JF ELSEIF ELSE ENDIF Statements You can use this if else structure to change the circuit topology expand the circuit set parameter values for each device instance or select different model cards in each if else block 12 28 Star Hspice Quick Reference Guide Statements if condition1 statement block1 elseif condition2 statement block2 else condition3 statement block3 endif INCLUDE Statement General Form INCLUDE lt filepath gt filename See INCLUDE Statement in the Star Hspice Manual LIB Library Call Statement General Form LIB lt filepath gt filename entryname entryname Entry name for the section of the library file to include filename Name of a file to include in the data file filepath Path to a file See LIB Library Call Statement in the Star Hspice Manual Star Hspice Quick Reference Guide 12 29 Controlling
170. udible tone when simulation returns a message such as info hspice job completed BEEP 0 turns off the audible tone Outputs the binning parameters of the CMI MOSFET model Currently available only for Level 57 Stops printback of the data file until an OPTIONS BRIEF 0 or the END statement is encountered Sets the number of columns for printout x can be either 80 for narrow printout or 132 for wide carriage printouts Star Hspice Quick Reference Guide General Control Options Option Description INGOLD x Specifies the printout data format LENNAM Specifies the maximum length of names in the operating point analysis results printout LIST VERIFY Produces an element summary listing of the input data to be printed MEASDGT x Used for formatting of the MEASURE statement output in both the listing file and MEASURE output files ma0 mt0 0 and so NODE Causes a node cross reference table to be printed NOELCK No element check bypasses element checking to reduce preprocessing time for very large files NOMOD Suppresses the printout of model parameters NOPAGE Suppresses page ejects for title headings NOTOP Suppresses topology check resulting in increased speed for preprocessing very large files NUMDGT x Sets the number of significant digits printed for output variable values NXX Same as BRIEF See BRIEF Star Hspice Quick Reference Guide 12 3 Controlling Inp
171. um voltage value Positive or negative controlled source connecting nodes Star Hspice Quick Reference Guide Parameter NPDELAY PO P1 POLY PWL SCALE TC2 TD transresis tance vnl XL yl Voltage and Current Controlled Elements Description Sets the number of data points to be used in delay simulations The polynomial coefficients Polynomial dimension Piecewise linear function keyword Element value multiplier First order and second order temperature coefficients Time delay keyword Current to voltage conversion factor Names of voltage sources through which the controlling current flows Controlling current through vnl source Corresponding output voltage values of x See E Element Parameters in the Star Hspice Manual Op Amp Element Statement COMP 0 Or COMP 1 Star Hspice Quick Reference Guide 11 17 xal in out vcc vee modelname AV val xal in in out compl comp2 vcc vee modelname AV val Behavior Macromodeling inc in modelname out vec vee Noninverting input Inverting input Subcircuit reference name Output single ended Positive supply Negative supply See Op Amp Element Statement Format in the Star Hspice Manual Op Amp MODEL Statement General Form MODEL AMP parameter value AMP mname parameter value Identifies an amplifier model Model name Elements reference the model by
172. uracy of the capacitance equations by using quasi static charge conservation in the implanted layer of a MESFET Using Level 7 with Star Hspice 1 Set Level 7 to identify the model as TOM3 2 The default room temperature is 25 in Star Hspice but is 27 in most other simulators When comparing to other simulators set the simulation temperature to 27 with TEMP 27 or with OPTIONS TNOM 27 3 The model parameter set should always include the model reference temperature TNOM which corresponds to TREF in other levels in Star Hspice The default for TR is 25 4 The model has its own charge based capacitance model The CAPOP parameter which selects difference capacitance models is ignored in this model 5 The model uses the analytical derivatives for the conductances The DERIV parameter which selects the finite difference method is ignored in this model 6 DTEMP can be used with this model It is set on the element line and increases the temperature of individual elements relative to the circuit temperature 7 The general syntax for MESFET element is the same as the other standard MOS models Star Hspice Quick Reference Guide 86 11 JFET and MESFET Elements 8 The model is defined by a specific subcircuit and a set of device equations The topology utilizes local feedback which decreases the DC output conductance to model drain and dispersion and self heating effects Note For more informations refer to TOM3 Equatio
173. ut Option OPTLST x OPTS PATHNUM PLIM POSTTOP n POST_VERSI ON STATFL SEARCH 12 4 Description Outputs additional optimization information Prints the current settings of all control options Prints subcircuit path numbers instead of path names Specifies plot size limits for printer plots of current and voltage Outputs instances up to levels deep OPTION POST saves all nodes at all levels of hierarchy OPTION POSTTOP or OPTION POSTTOP 1 saves only the TOP node OPTION POSTTOP 2 saves only nodes at the top two level Sets the post processing output version with values x 9601 or 9007 Controls whether Star Hspice creates a stO file statf1 0 default outputs a st O file statfl 1 suppresses the st 0 file Sets the search path for libraries and included files Star Hspice Quick Reference Guide General Control Options Option Description VERIFY Same as LIST See LIST See General Control Options in the Star Hspice Manual CPU Options Option Description CPTIME x Sets the maximum CPU time in seconds allotted for this job EPSMIN x Specifies the smallest number that can be added or subtracted on a computer a constant value EXPMAX x Specifies the largest exponent you can use for an exponential before overflow occurs LIMTIM x Sets the amount of CPU time reserved for generating prints and plots in case a CPU time limit CPTIME x
174. value of 1 0e4 m sec to assure that it is positive after temperature compensation The model parameters that accommodate temperature dependencies are KT and KT2 for VTH UTE for UO AT for VSAT UAI for UA UBI for UB and UCI for UC Set up the conversion of temperature between Star Hspice and SPICE3 as follows SPICE3 OPTIONS TEMP 125 MODEL NCH NMOS LEVEL 8 TNOM 27 HSPICE TEMP 125 MODEL NCH NMOS LEVEL 47 TREF 27 SCALM affects the common MOS parameters such as XL LD XW WD CJ CJSW JS and JSW LEVEL 47 uses MOS parasitic models specified by ACM LEVEL 47 uses MOS noise models specified by NLEV DELVTO and DTEMP on the element line can be used with LEVEL 47 10 8 Star Hspice Quick Reference Guide LEVELs 49 and 53 BSIM3v3 MOS Models The impact ionization current set by PSCBE1 and PSCBE2 contributes to the drain source current not bulk current For more information about this model see Using the BSIM3 Version 2 MOS Model in the True Hspice Device Models Reference Manual LEVELs 49 and 53 BSIM3v3 MOS Models LEVELs 49 and 53 use the general model statement described in MOSFET Model Statement on page 9 3 They also maintain compliance with the UC Berkeley release of BSIM3v3 The basic differences between LEVEL 49 and 53 are LEVEL 49 was designed to be compliant with Berkeley BSIM3v3 but enhanced for higher speed To achieve this ACM defaults to 0 in LEVEL 49 compliance with B
175. w VBIC99 that is the new version of VBIC model is implemented to Star Hspice as BJT level 9 You can use VBIC99 model by specifying parameter LEVEL into 9 for the bipolar transistor model The VBIC99 covers several effects that are improved comparing to VBIC95 model In VBIC99 the temperature coefficients of base and collector resistances are split as separate ones And the temperature dependence of the built in potential is also improved Element Syntax The element syntax of BJT Level 9 is General Form Qxxx nc nb ne lt ns gt mname lt AREA val gt lt OFF gt lt VBE val gt lt VCE val gt lt M val gt lt DTEMP val gt where the lt angle brackets gt indicate optional parameters XXX element name Must begin wit Q BJT el Must begin with Q which can be followed by up to 1023 alphanumeric characters Collector terminal node name or number nb Base terminal node name and number ne Emitter terminal node name or number 7 44 Star Hspice Quick Reference Guide ns mname AREA OFF VBE VCE DTEMP Star Hspice Quick Reference Guide Level 9 VBIC99 Model Substrate node name or number Self heating node name or number BJT model name reference The normalized emitter area VBIC99 level 9 model has noareaeffect Default value 1 Area is used only as an alias of the multiplication factor M Sets initial condition to OFF for this element in DC analysis OFF can t be used with VBE or VCE
176. when VERSION 2 2 For gate body tunneling set IGMOD 1 BSIMPD2 01 supports capmod 2 and 3 only capmod 0 and 1 are not supported By default if Xj source drain junction depth is not given it is set to Tsi silicon film thickness Xj is not allowed to be greater than Tsi BSIMPD refers substrate to the silicon below buried oxide not the well region in BSIM3 It is used to calculate backgate flatband voltage Vfbb and parameters related to source drain diffusion bottom capacitance Vsdth Vsdfb Csdmin Positive NSUB means the same type of doping as the body and negative NSUB means opposite type of doping For more information about this model see Using BSIM3 SOI PD in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 10 25 MOSFET Models LEVEL 57 Template Output Name Alias Description L LV1 Channel length L w LV2 Channel width W AD LV3 Area of the drain diode AD AS LV4 Area of the source diode AS ICVDS LV5 Initial condition for drain source voltage VDS ICVGS LV6 Initial condition for gate source voltage VGS ICVES LV7 Initial condition for Substrate source voltage VES VTH LV9 Threshold voltage bias dependent VDSAT LVIO Saturation voltage VDSAT PD LV11 Drain diode periphery PD PS LV12 Source diode periphery PS RDS LV13 Drain resistance squares RDS RSS LV14 Source resistance squares RSS GDEFF LV16 Effective drain conductance I RDeff GSEFF LV17 E
177. x nl n2 mname C capacitanc e TC1 TC2 SCALE IC Capacitor element name Positive terminal node name Negative terminal node name Capacitance model name Capacitance at room temperature as a numeric value or parameter in farads First order temperature coefficient Second order temperature coefficient Element scale parameter scales capacitance by its value Initial voltage across the capacitor in volts Star Hspice Quick Reference Guide Capacitors M Multiplier used to simulate multiple parallel capacitors W Capacitor width in meters L Capacitor length in meters DTEMP Element temperature difference with respect to the circuit temperature in Celsius C equation Capacitance at room temperature specified as a function of any node voltages branch currents or any independent variables such as time frequency HERTZ or temperature CTYPE Determines capacitance charge calculation for elements with capacitance equations If a capacitor model exists using the same name as a parameter for capval the model name is taken to avoid syntactic conflicts Capacitance Model General Form gt MODEL mname C parameter value C Specifies a capacitance model mname Model name parameter Any model parameter name See Capacitance Model in the True Hspice Device Models Reference Manual Star Hspice Quick Reference Guide 3 5 Passive Devices and Independent Sources Polynomial Capacit
178. y its value First order temperature coefficient Second order temperature coefficient Mutual Inductor Element General Form Kxxx Lyyy Lzzz K coupling K coupling Kxxx Lyyy Lzzz Star Hspice Quick Reference Guide 3 7 Coefficient of mutual coupling Mutual inductor element name Name of the first of two coupled inductors Name of the second of two coupled inductors Passive Devices and Independent Sources Polynomial Inductor Element General Form Lxxx nl n2 POLYcO cl lt L gt inductance lt lt TCl gt val gt lt lt TC2 gt val gt lt SCALE val gt lt IC val gt lt M val gt DTEMP val lt R val gt See the arguments for Linear Inductor Element on page 3 6 Magnetics Magnetic Winding Element General Form Lxxx nl n2 NT turns lt L gt inductance lt lt TCl gt val gt lt lt TC2 gt val gt lt SCALE val gt lt IC val gt lt M val gt lt DTEMP val gt lt R val gt See the arguments for Linear Inductor Element on page 3 6 Also see Inductors in the Star Hspice Manual Mutual Core Statement General Form Kaaa Lbbb lt Lccc lt Lddd gt gt mname K coupling Kaaa Kxxx Lbbb Lccc Lddd Lyyy 3 8 lt MAG magnetization gt Coefficient of mutual coupling Saturable core element name Mutual inductor element name The names of the windings about the Kaaa core Name of the first of two coupled inductors Star Hspice Quick
179. ylor Huang 6 Lattin Jenkins Grove ASPEC style parasitics 7 Lattin Jenkins Grove SPICE style parasitics 8 Advanced LEVEL 2 9 AMD 10 AMD 11 Fluke Mosaid 12 CASMOS GTE style 10 2 Star Hspice Quick Reference Guide Model Table All All Platforms Platforms including except LEVEL MOSFET Model Description PC PC 13 BSIM X 14 Siemens LEVEL 4 X 15 User defined based on X LEVEL 3 16 Not used _ _ 17 Cypress x 18 Sierra 1 X 19 Dallas Semiconductor X 20 GE CRD FRANZ X 21 STC ITT X 22 CASMOS GEC style X 23 Siliconix X 24 GE Intersil advanced X 25 CASMOS Rutherford X 26 Sierra 2 X 27 SOSFET X 28 Modified BSIM Avant X proprietary model Star Hspice Quick Reference Guide LEVEL 29 MOSFET Models MOSFET Model Description Not used All Platforms including PC 30 VTI 31 32 xk Motorola AMD 33 xk National Semiconductor 34 35 EPFL not used Siemens 36 Sharp 37 38 TI IDS Cypress Depletion 39 BSIM2 40 41 HP a Si TFT TI Analog X X X X X X X X X X X 46 SGS Thomson MOS LEVEL 3 47 BSIM3 Version 2 0 MOS 49 BSIM3 Version 3 Enhanced MOS 10 4 Star Hspice Quick Reference Guide Model Table All All P
180. ysis sese 13 11 Transient Analysis eee 13 11 sa o tenet eec eee 13 15 Worst Case Analysis a s 13 17 Chapter 14 Optimizing Data 14 1 Analysis Statement DC TRAN AC Syntax 14 1 PARAM Statement Syntax 14 2 Star Hspice Quick Reference Guide Contents MODEL Statement Syntax 14 3 Filters and Systems eei 14 4 Laplace TransformJs eem teet 14 4 Chapter 15 Output Format 15 1 Graphing Results in 15 1 AC ATALySIS tst tte oit eet RRE 15 4 Print Commands ee 15 5 DOUT Statement eret reete 15 15 STIM Statement e creer te nite 15 16 DC and Transient Output 15 17 Power Output nta retenti pred 15 17 AC Analysis Output sse 15 18 Element Template Output sess 15 21 Element Template Listings 15 21 viii Star Hspice Quick Reference Guide 724 Chapter 1 Introduction This Quick Reference Guide is a condensed version of the Star Hspice Manual For more specific details and examples refer to that manual The intent of this guide is to have a handy quick reference it is not intended to replace or supplement the Star Hspice Manual

Download Pdf Manuals

Related Search

Related Contents

ILX69-PBM User Manual  Outdoor  G&BL HVTCS10  eob3410 ................................................ ............................................. en  Saturn 2008 Sky User's Manual  MANUAL TÉCNICO  Le Viol et Ses Conséquences Traumatiques Sur La Femme  Vestax PCV-275 Musical Instrument User Manual  Untitled - Wissensnavigator  LG Electronics 002KPYR0001018 Cell Phone User Manual  

Copyright © All rights reserved.

• https://telegra.ph/Wire-Size-Calculator-From-Voltage-Drop-a376edcd-11-16
• https://telegra.ph/Calculate-Length-from-Voltage-Drop-a6e4fdd9-11-16
• https://telegra.ph/Wire-Size-Calculator-From-Voltage-Drop-e36e0908-11-16
• https://telegra.ph/AC-Single-phase-Voltage-Drop-Calculator-f9ba1e92-11-16
• https://telegra.ph/Calculate-Current-from-Voltage-Drop-81a6b7fd-11-16
• https://telegra.ph/L-profile-weight-calculator-95377a8b-11-07
• https://telegra.ph/AC-Single-phase-Voltage-Drop-Calculator-2994e3fb-11-17
• https://telegra.ph/DC-Voltage-Drop-Calculator-96ce4c67-11-17
• https://telegra.ph/Calculate-Current-from-Voltage-Drop-ac5fb5eb-11-18
• https://telegra.ph/DC-Voltage-Drop-Calculator-a2ab1fee-11-18