User Manual
Contents
1. Faulty components short circuits Automatic pinout identification for all the above components Current gain measurement for bipolar transistors Test current display Vsr Is measurement Collector leakage current measurement Automatic recognition of semiconductor type for bipolar transistors Ge Si Detection of Collector Emitter diode and Base Emitter shunt resistor Gate threshold voltage for MOSFETs Test current measurement Gate threshold Ipss and Roson for JFETS Diode forward voltage and forward current measurements Diode leakage current measurement Low power Darlington recognition with pinout identification Low power Triac and thyristor identification Unijunction transistor identification with pinout and Rgs n measurement Internal short circuit detection and resistance measurement AS4002P User Manual 3 SECTION 3 COMPONENT ANALYSIS The AS4002P Semiconductor Analyzer is designed to analyze out of circuit and un powered components This is necessary to avoid erroneous component detection and errors in parameters measurements Three terminals components can be connected in any fashion to the probes Diodes should be connected to the left and right probes When the unit is powered on the display shows the revision of the software for two seconds and the analysis begins If no semiconductor is connected to the unit or if the component is not detected the following message will be display2. IODE NETWORKS The analyser detects a component with 2 junctions but not being a valid transistor It could be a diode network or or any component not corresponding to a valid transistor In this case the analyser indicates the common point by the symbol 0 the 2 others with letters A and K according to the case it is an anod or a cathod The analyser display for a diode network Here the common point is in the middle one diode having its cathod on the left and the second its anod on the right 3 9 UNIJUNCTION TRANSISTORS AS4002P User Manual 11 The unijunction transistor is more a thyristor than a transistor It has one junction and was once referred to as a double base diode The UJT unijunction transistor does not conduct until a peak voltage Vp is reached At that time the emitter conducts resulting in a positive pulse at BI and a negative pulse at B2 The threshold voltage Vp depends on the voltage between the bases and the Intrinsic Resistor Ratio n When the emitter is below the threshold voltage the B B channel acts as a resistor Rgs generally between 5kQand 10k The unit does not recognize UJT transistors with Rss values under 100 or above 20kQ The analyser detects the pin out and measures these two parameters The n measurement takes a few seconds to stabilize AS4002P User Manual 12 SECTION 4 ANNEXES Annex 1 Calibration The purpose of the calibration is to establish the resistances of the an
3. JFETs Maximum threshold voltage measurement is fixed to 20V Voltage resolution is 10mV for values up to 9 99V and 100mV above The example below shows the threshold voltage screen for a N channel JFET Note that the test current is also represented The accuracy of the measurement is 100mV typical This example shows the threshold voltage measurement for an N Channel JFET Saturation current measurement The saturation current can be measured from 0 to 99 9mA Resolution is 10 uA for current up to 10mA and 100uA above With low Ipss transistors under 2 mA the unit will show 0 00mA On resistance measurement The AS4002P can measure Rpson value from 0 to 99902 with 10 resolution With low Ipss transistors the unit can show unstable values or gt 3 4 Enhancement mode MOSFET MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor Like JFET they are available in two main types N Channel and P Channel Most modern MOSFETs are of Enhancement Mode type meaning that the bias of the gate source voltage is always positive for N channel types The other rare type of MOSFET is the Depletion Mode type which is also recognized by the analyser MOSFETs have an insulated gate that results in negligible gate current for both positive and negative gate source voltages An important feature of a MOSFET is the gate source voltage at which conduction between the source and drain starts Below this value
4. Semiconductor analyser AS4002P User Manual Copyright Ormelabs C 2010 http www ormelabs com AS4002P User Manual 1 CONTENTS SECTION SECTION 1 Introduction tas 3 SECTION 2 ESA ae aan mi ont din 3 SECTION 3 Component analysis 4 Sale Bipolar FAR STS TORS Rando n 4 3 2 Faulty semiconductors 7 3 3 Junction Field effect transistors 7 3 4 Enhancement MOSFET Transistors 8 3 5 Depletion MOSFET Frs nr nn en serene 9 340 TOYS ANA MAS nn nain ts 10 De DICO Te EN 10 7 0 Diodes TELWOEKS En diet 11 3 9 Unijunction transistors nissan atitebiitensites 12 SECTIONS Amine eS Un ns bi dar eget eee 13 Annex LCaHbradONMss nn ner na wees 13 Annex 2 Optocouplers analysis cccseeessseseeeeeeeeeeeees 14 Annex 3 Jack plus phot ia eeu 14 Annex 4 Optocouplers interface schematics 15 Annex 5 Technical specifications cc ssesssssseeresseeeeees 15 AS4002P User Manual 2 SECTION 1 INTRODUCTION The AS4002P Semiconductor Analyzer is a powerful instrument that can identify easily and accurately a large number of components SECTION 2 FEATURES Automatic component identification Bipolar transistor with or without protection diode and or B E shunt resistor Darlington transistors Enhancement and Depletion mode MOSFETs gt Junction FETs gt Triac gt Thyristors Diodes Unijunction transistors
5. The determination of the Hrg of high power transistors uses higher base current In this case a star is displayed after the beta value The value can be inaccurate if the test current is above 10mA This is also the case when a transistor with an internal resistor is recognized This example shows the first screen for a NPN Silicon bipolar transistor with internal protection diode This example shows the display when a PNP Germanium transistor is detected The following screen is displayed when a NPN Darlington type is detected The current gain is not displayed AS4002P User Manual 5 This screen shows an inaccurate Hrg measurement of an ESMII3 transistor with internal diode and shunt resistor symbolised by the symbols RS and The actual gain is higher than 51 h amp Please note that the analyser will determine that the transistor under test is a Germanium if the base emitter voltage drop is between 0 1V and 0 5V If this voltage is between 0 5V and 1V the transistor will be detected as Silicon type Between 1V and 2V the analyser will determine that the transistor is a Darlington type The second panel shows the Var I8 values when HFE measurement is realised The third and last screen shows the collector leakage current Icko The collector leakage current is measured when the base is connected to the emitter through a resistor of 1OOkQ The current flowing across this resistor is low
6. alog switches The measurement of these resistances is done by an automatic process When the unit is powered on without calibration the unit shows this opposite screen In this case the unit takes default values for the internal calculations The measurements are not accurate and some components might not be determined To enter calibration mode place a short at the STI and short the three test terminals together Apply power and this opposite screen appears Remove the short at STI and the self calibration starts The unit performs three resistance measurements and displays their values These values should be between 100 and 200Q and are stored in memory Calibration is only required once but can be performed as often as desired Your instrument is now ready for use Annex 2 Optocoupler analysis The OP1 module allows the detection and the Current Transfer Ratio measurement of most standard optocouplers The module without any component must be connected to the analyser before power up When the analyser is powered on the module is recognized by the tester and the screen shows the opposite message If no component or a faulty component is detected the analyser should display this opposite screen When a valid optocoupler is plugged in to its corresponding socket the analyser would show this screen AS4002P User Manual 13 The first line shows the Current Transfer Ratio This value expressed in is the r
7. atio between the output transistor collector current and the input LED current Measurement range is 1 to about 600 Maximum output current is 1OmA The second line shows the LED current and the forward voltage Annex 3 JACK PLUG PINOUT You can realize your own cord thanks to the pinout below Right _ lt lt Middle em Loo o Left Annex 4 OPTOCOUPLER INTERFACE BOARD SCHEMATICS LEFT D1 1N4148 8 terminals optocouplers RIGHT C1 10uF MIDDLE AS4002P User Manual 14 Annex 5 TECHNICAL SPECIFICATIONS Reference Temperature 25 C Parameter Min Typical Max Note Uma 1 Peak test voltage across unknown Co 51V o sav l Measurable transistor gain Hre S Transistor He accuracy 242 Transistor Vsg accuracy 2 20mV Veer for Germanium identification Vee for Silicon identification Ve for Darlington identification 10v 20 Fe band A current stare er current Acceptable collector leakage O 5mA 3 Base emitter shunt resistor 50kQ threshold MOSFET gate threshold range 20mV PR LE NER current MOSFET maximam gate curen ma EET Ron rame 2 we JFET Roson accuracy 5 10Q TFET loss range oma 99 9mA JFET Ipss accuracy 5 3 0 1mA evem ow Thyristor Tviae gare testcument oma OOO o Thyristor Tviae oad est euren oma Diode limiting resior 1 400 Diode limiting ressor
8. compared to the current flowing into the base Thus the current displayed is near the real Ic o current measured normally with the base left open One can determine the Icgo current by dividing the I result by the Hrg value Two automatic ranges are provided in the unit The first range goes up to 25uA with 100nA resolution The second range goes to 500uA with IuA resolution The example shows the display with an old Germanium AC130 transistor which exhibits a collector leakage current of several pA AS4002P User Manual 6 3 2 Faulty semiconductors Generally a defective semiconductor presents one or two junctions short circuited In such case the analyser would display the affected terminals and the resistance value of the short Please note that the analyser will determine a short circuit if the measured resistance between two terminals is below 50Q for the two current directions and if the third terminal does not influence the value The test current for the resistance measurement is about 12mA 3 3 Field Effect Transistors JFET With no gate voltage current flows easily when a voltage is D applied between the source and drain This current is called the Saturation Current symbolized by the Ips symbol The current N channel flow is modulated by applying a voltage between the gate and DAMES source terminals N Channel JFETs require a negative voltage on G their gate with respect to their source the more negativ
9. e the S voltage the less current can flow between the drain and source When the voltage reaches the voltage threshold of the transistor the drain current becomes zero D With low drain source voltage the channel is a gate to source voltage dependant resistor linear region With no gate to source voltage this resistance is called Rpsoy Unlike MOSFETs JFETS P channel have no insulation layer on the gate This means that the gate to G source resistance is very high if the junction is reverse biased but the gate current can rise if the junction is forward biased S Unlike other semiconductor testers the analyser has an original method which permits the determination of 3 parameters Vro Ipss and Rpson The internal structure of JFETs is essentially symmetrical about the gate terminal this means that the drain and source are indistinguishable by the unit However the analyser will show the drain and source terminals according to the parameter measurements The permutation of the drain and source terminals of the JFETs will not change the pinout displayed but new parameters will be measured according to the new configuration Thus one can verify the symmetry of the transistor by comparing the values for the two configurations The three parameters are displayed successively every 4 seconds AS4002P User Manual 7 Threshold voltage measurement The threshold voltage is negative for N channel JFETs and positive for P channel
10. ected to the left and right test clips The analyser three successive tests on the diode with the results displayed successively every 5 seconds The first screen gives the forward voltage the pin out and the test current D I ODE lipi 1 z oo lJ for a limiting resistor of about 4000 K H H te SIMA which gives a maximum current around 12mA The example below shows the first screen for a red LED AS4002P User Manual 10 The next screen shows the same information but with a limiting resistor of 10kQ which gives a maximum current of 800UA The same LED connected to the instrument gives lower forward voltage and current The last screen shows the leakage current measurement and the absolute reverse test voltage Working junctions should not introduce any leakage current Germanium junctions can exhibit low leakage current The example below gives the result for a base emitter junction of an old OC140 Germanium transistor This test is useful in detecting bad junctions which appear correct with other tests Some special components like photo diodes can also be checked with this test The maximum leakage that the analyser can measure is 25uA Above this value the display shows Measurement resolution is 100nA In order to obtain reliable leakage current values the instrument should be kept in a dry environment as humidity can generates parasitic currents in the surface of the printed circuit board 3 8 D
11. ed When a component is detected the first line shows the component type and up to two parameters The second line shows the pinout and for some components a supplementary parameter For some components the analyzer shows successively different screens with different parameters The analysis is done in real time you just have to connect the component to the probes and the unit displays in less that one second the result of the analysis The backlight of the unit is powered when a valid component is detected and powered off when no component is connected The backlight is powered off also when the component is connected for more than 30 seconds in order to conserve battery life 3 1 Bipolar transistors A bipolar transistor BJT is a semiconductor device commonly used for amplification Physically a bipolar transistor amplifies current but it can be connected in circuits designed to amplify voltage or power There are two major types of bipolar transistors PNP and NPN The ratio of the collector current to the base current called current gain or Hr is on the order of 100 for most types of BJTs Bipolar transistors can be fabricated to match with like devices much better than FETs making them useful for high precision analog circuit design This makes them well suited as components in op amps and discrete transistor amplifiers where combined in precisely matched pairs they form input structures called current mirrors Some high powe
12. her AS4002P User Manual 9 3 6 THYRISTORS SCR and TRIACs Thyristors are switching devices that don t require any control current once they are turned on When a small control pulse of gate current is applied the SCR conducts only in the forward direction the same as any conventional rectifier When that pulse is removed the thyristor continues to conduct assuming a minimum holding current is maintained Thyristors operates in only one quadrant anode and gate positive Triacs operates in 3 or 4 quadrants the analyser tests the triac on two quadrants Sensitive low power thyristors Silicon Controlled Rectifiers SCRs and Triacs can be easily identified and analysed with the AS4002P Triac operation is very similar to that of thyristor and can be distinguish from it by the analyser Thyristor terminals are the anode cathode and the gate For a triac the terminals are MT1 MT2 and gate displayed T1 T2 and G by the analyser MT1 is the terminal with which the gate current is referenced Here the analyser shows the results when a TS420 thyristor is under test Here a MAC97A8 triac is under test The test currents used by the AS4002P are low lt 12mA to eliminate the possibility of damage to a vast range of component types Some thyristors and triacs will not operate at low currents and these types cannot be analysed with this instrument 3 7 DIODES The diode or any semiconductor junction should be conn
13. r or high frequency BJTs have an internal diode between collector and emitter terminals AS4002P User Manual 4 The AS4002P Semiconductor Analyser can detect two different kinds of semiconductors Germanium or Silicon The first type are older and are not common The analyser can also detect the presence of an internal diode symbolized by the pictogra s well as a base emitter shunt resistor All the parameters are displayed in three different panels The first panel displays the Hre static current gain of the transistor The AS4002P can measure current gain in the range of 5 to 999 The current gain varies according to the operating condition of the transistor The polarization of the transistor under test is not fixed but depends on the actual Hrg value The collector test current is displayed for reference This will be between 1 5mA and 12mA The unit can also detect low power Darlington transistors but in this case the current gain is not displayed Power Darlington transistors will generally not be recognized by the analyser These transistors usually contain a base emitter shunt resistor which provides an additional path for the base current The Hr value displayed can be different than the value encountered in a real world circuit with different values of collector current and collector voltage The displayed value is very useful however for comparing transistors of a similar type for the purposes of gain matching or fault finding
14. the transistor is off and no current can flow across the drain to source terminals An inherent body diode is present in all enhancement mode MOSFET AS4002P User Manual 8 The AS4002P detects that drain source conduction has started when it reaches about 2mA The screen gives information about the type of MOSFET detected the gate source threshold voltage and the pinout of the transistor Like bipolar transistors the test current is also displayed on the second line Here the AS4002P shows the results when a BUZ11A N Channel MOSFET is under test Here the AS4002P shows the results when a IRF9520 N Channel MOSFET is under test The maximum gate current is fixed to 0 5uA In order to obtain reliable results the instrument should be kept in a dry environment as humidity can generate parasitic currents in the surface of the printed circuit board which can lead to erroneous detection of MOSFETs 3 5 Depletion mode MOSFET Depletion mode Mosfets are similar to the JFET except that the gate is insulated The transistor is conductive when no voltage is applied to the gate and as the n channel jfet the voltage must be below the threshold voltage in order to turn off the device The instrument detects only n channel device the other one is very rare Here the instrument shows the result when a BSS 229 transistor is connected to the input Dual gate transistors like BF961 can be tested by connecting the two gates toget
15. wo AS4002P User Manual 15 Diode forward voltage accuracy 2 20mV Diode leakage current range 0 0u A ioe 25 0uA 1 6 UJT Ras range 1000 20kQ UJT Rss accuracy 3 100Q OT yrange CET Le Cure ee 7 Bayiye OOOO VIRE wo Cow Banery voltage warning v inactivity backlight shutdown oss se we Between any pairs of test clips Hr 100 Silicon transistor Collector emitter voltage of 4 0V Actual test current depending of threshold voltage Ip 5 Vro0 1 1kQ Typical accuracy Ipss gt 2mA Reverse voltage is SV if Ir OWA 2 5V if IR 25 0UA Ve 5 0V SO eS SS AS4002P User Manual 16 OrmeLabs SARL 1 All e des rochers 94045 Cr teil FRANCE Web www ormelabs com Email infos ormelabs com Tel 33 0 951 23 74 80 AS4002P User Manual 17
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