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High Frequency Electronics — June 2009 Online Edition

1. The transceiver market continued to show strong growth in 2008 despite the global financial crisis that emerged during the second half of the year and impacted wireless cap ex spending says founder and President Earl Lum The report provides a unique perspective on the global shipments and demand for TRx equipment cov ering all air interface standards and frequencies and major OEMs including Alcatel Lucent Ericsson Huawei Technologies Motorola Nokia Siemens Networks Nortel Networks and ZTE The big surprise was Huawei Technologies which became the second largest vendor after Ericsson In addi tion ZTE moved into fourth place in overall rankings after posting 109 growth says Lum The overall mar ket is expected to decline in 2009 and remain weak through 2011 before seeing a rebound in 2012 GSM ship ments continue to represent the majority of the overall market demand in the forecast but will see a gradual decline We forecast that LTE shipments will become the second largest segment by 20138 followed by W CDMA HSPA shipments The report is currently available for purchase and information can be downloaded at www ejlwireless com People in the News TRAK Microwave Corporation a Smiths Interconnect business appoints Keith Morrison as_ Director Business Development for Integrated Microwave Assemblies IMA He reports to Michael Kujawa Vice President Sales and Marketing of TRAK Microwave Corporation Mr M
2. AE oer DIRECT D Oi ORDER BY a Q Less Cu These tiny new air core inductors have the highest Q and current handling in the smallest footprint Coilcraft s new SQ air core inductors have unmatched Q factors most are above 200 in the 1 2 GHz range That s 3 times higher than comparably sized 0805 chip coils And with their extremely low DCR they can handle 4 to 8 times more current up to 4 4 Arms SQ air core inductors are perfect for your LC filter and RF impedance matching applications They come in 15 values ranging from 6 to 27 3 nH Q factors are 3X higher than all with 5 tolerance standard chip inductors These coils are significantly smaller than exist SOY ing air core inductors We reduced Se a the footprint by using close wound N iat S gt construction and keeping the leads a y close to the body The square shape W cuts the height to as low as 1 5 mm N p and creates flat top and bottom sur faces for easy automated handling m and stable mounting ia i See how the ultra high Q and The square shape and narrow footprint CUTYent handling of Coilcraft s reduce board space by 60 75 over new SQ air core inductors can conventional air core inductors maximize the performance of 1 10 1000 10000 100 Frequency MHz your next design For complete spec
3. Linear Amplification Technique for Digital Mobile Communications Proc 39th IEEE Vehicular Technol Conf pp 159 164 1989 62 A R Mansell and A Bateman Transmitter Linearisation Using Composite Modulation Feedback Electronics Lett vol 32 pp 2120 2121 Nov 1996 63 S W Chung J W Holloway and J L Dawson Energy Efficient Digital Predistortion with Lookup Table Training Using Analog Cartesian Feedback EEE Trans Microwave Theory Tech vol MTT 56 pp 2248 2258 Oct 2008 June 2009 53 High Frequency Design SPECIFYING CABLES Here is a review of the basic data used fo specify cable assemblies for com munications systems test Guidelines for Choosing RF Microwave Coaxial Cable Assemblies By Gary Breed Editorial Director n the process of ire and con structing RF and microwave systems few components are more equipment and high perfor common than cable mance high reliability assemblies In most com applications such as space munication facilities there are many cables used to interconnect the various pieces of equipment Within those boxes cables will be used to route signals among the various boards and modules And of course the connection to the antenna system also requires cables In addition to system interconnections the test equipment used during the design manu facture installation and commissioning of these systems use cables to deliver and receiv
4. ALSO PUBLISHED ONLINE www hightrequencyelectronics com HiGH FREQUENCY JUNE2009 TCT Transmitters ings MMIC RFIC SiP SoC eAssembly Specificatio wireless Test Military amp Spa Linearization Te Technology Repom Updaie on lutorialA Review of G Featured Products Transisioism JUMP DIRECTLY TO THE TABLE OF CONTENTS JUMP DIRECTLY TO THE ADVERTISER INDEX Copyright 2009 Summit Technical Media LLC Ideas for today s engineers Analog mem Digital RF Microwave mm wave Lightwave Green for 50 Years 1958 2008 RF Microwave and Millimeter wave Distribution Closed Every Saint Patrick s Day Join the celebration C W SWIFT amp Associates Inc 15216 Burbank Blvd Van Nuys CA 91411 Tel 800 642 7692 or 818 989 1133 Fax 818 989 4784 sales cwswift com www cwswift com Get info at www HFeLink com 4 Ti a m 1 i Pale 1 7 gt i a l a C a a a E i f ET bro 5 Er 8 PLIFIERS MIXERS SYNTHESIZER NSCILLATE JRS TY AMPLIFIERS SUPERCOMPONENTS i APELICATIONS SATCOM LNAS Spaceborne Radar Transmitter Orivers Radiometric Sensors ELINT Receivers From P kHz to 60 GHz Optimized for Low Power Consumption Meeting MIL PRF 38534 Class K or MIL STD 883 Class 5 Capable of Withstanding the Rigorous De
5. Distortion Reducing Means for Single Sideband Transmitters Proc IRE vol 44 pp 1760 1765 Dec 1956 45 H S Black Inventing the Negative Feedback Amplifier IEEE Spectrum vol 14 pp 55 60 Dec 1977 46 H A Rosen and A T Owens Power Amplifier Linearity Studies for SSB Transmissions JEEE Trans Commun Syst vol CS 12 pp 150 159 June 1964 47 C C Hsieh and E Strid A S Band High Power Feedback Amplifier 1977 IEEE MTT S Int Microwave Symp Dig pp 182 184 48 K Oosaki and Y Akaiwa Nonlinearity Compensation of Linear Power Amplifier for Mobile Communication 4th IEEE Int Conf Record Universal Personal Commun pp 302 305 1995 49 R J Gilmore R Kiehne and F J Rosenbaum Circuit Design to Reduce 3rd Order Intermodulation Distortion in FET Amplifiers 1985 IEEE MTT S Int Microwave Symp Dig pp 413 416 50 A K Ezzeddine H L Hung and H C Huang An MMIC C Band FET Feedback Power Amplifier IEEE Trans Microwave Theory Tech vol MTT 38 pp 350 357 Apr 1990 51 J G McRory and R H Johnston An RF Amplifier for Low Intermodulation Distortion 1994 IEEE MTT S Int Microwave Symp Dig pp 1741 1744 52 S Narayanan Application of Volterra Series to Intermodu lation Distortion Analysis of Transistor Feedback Amplifiers JEEE Trans Circuit Theory vol CT 17 pp 518 527 Nov 1970 53 Y Kim Y Yang S Kang and B Kim Li
6. First of all let s look at the maximum allowed noise floor without any interferers From the 3GPP specifica tion the specified sensitivity is e Total input power 1 106 7 dBm 3 84 MHz e Dedicated physical channel power DPCH_EC P ens 117 dBm 3 84 MHz e The processing gain of 12 2 kps reference channel G 25 dB It has been reported that the required E N the ratio of signal energy bit to noise spectra density shall be bet ter than 5 2 dB to guarantee the Base Band BB modem can demodulate the WCDMA signal properly In this paper we assume E N as 5 2 dB and add 2 2 dB imple mentation margin Therefore the allowed total noise power at antenna input is P P C sens 117 25 7 4 99 42 dBm t Typically some margin is needed to cover process vari ation for production yield By applying 1 dB margin the total noise allowed at antenna connector is N tmax_ant P 1 100 4 dBm 3 84 MHz At RFIC input taking front end loss into account the maximum allowed interfere level is N tmax N tmax_ant L 104 2 dBm front where Lefont 3 8 dB is assumed including switch loss and duplexer RX insertion loss etc The distortion products due to component nonlineari ty shall be kept below a certain level so that the receiver sensitivity will not be degraded too much The interferers are not only from second and third order nonlinearity but also from other sources which i
7. PLCC plastic LCC LBGA low profile BGA etc Package choices are based on die size operating fre quency speed pin count requirements plus size and cost considerations including compatibility with existing assembly methods Many IC products are offered with multiple package options Table 1 A partial list of major packaging types for RFICs MMICs multi chip or system on chip devices LTCC Software to Speed Design DuPont Microcircuit Materials http mcm dupont com part of DuPont Electronic Technologies and CAD Design Software have announced the integra tion of DuPont GreenTape low temperature co fired ceramic LTCC materials and manufacturing processes into CAD Design Software s Electronic Design Automation EDA design tools for Ceramic Hybrid VEL Y O C E Cable Assemblies Now you can rely on Delta a source of high quality RF connectors for over fifty years for all of your cable assembly needs as well as other connector related value added products a E a e Flexible and semi rigid cable assemblies from high volume low cost to sophisticated high frequency types using our fully automated cutting and stripping equipment for consistent and repetitive quality results Short order quantities as well as volume production globally from our manufacturing sites in the USA Taiwan and China e One piece body designs to support attenuator housing needs El 2 e Transmission line an
8. 470 1730 425 2200 2 1100 400 2500 990 1040 925 1175 600 1800 525 2400 2 1100 650 2800 U S Patent Number 6 807 407 Get info at www HFeLink com Cs Mini Circuits ISO 9001 ISO 14001 CERTIFIED IF 120 220 60 875 70 1000 100 700 2 1000 70 1500 dBm 19 21 21 21 23 23 LO Pwr VERY HIGH IP3 to 36 dBm 2102500 MHz From 95 ys ea Qty 100 By combining our advanced ceramic core amp wire and semi conductor technologies we ve created these evolutionary broadband mixers that are specially designed to help improve overall dynamic range so you can realize lower distortion and combat interference in today s crowded spectrum They re the very best very low in cost and immediately available off the shelf from the world leader in mixer technology Mini Circuits IP3 1dB Comp Conv Loss Isolation dB Price ea dBm dBm 36 23 33 20 82 20 31 20 34 23 32 20 dB L R L I Qty 1 9 46 46 15 95 50 45 22 95 52 50 22 95 50 45 24 95 48 47 24 95 RoHS 50 45 24 95 COMPLIANT ALLNEW OO P O Box 350166 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web site Write Patent Pending The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com l RF IF MICROWAVE COMPONENTS 412 RevC High
9. Maximum Frequency VSWR Max Freq Low Insertion Loss Y N Impedance ohms Shielding Effectiveness Max Freq Power Handling Conductor Types Solid stranded silver plated Environmental Requirements Temperature Range Temp Humidity High Med Low Vibration Shock High Med Low Abrasion High Med Low Connectors SMA Type N TNC FLE CABLES TH Miimi Circuiti Oo RoHS compliant Frequency Range DC 18 GHz Impedance 50 ohms 95 yo Models Connector Length Inser Loss dB Return Loss Na Price DC t 1 8 G H ea aty 1 9 Type Ft Midband Midban ea O Z from A Typ me Qiy 1 9 Strength ruggedness and reliability supercharged That s what youget FHEXTEST CARIES Male to Male n ee when you choose Mini Circuits ultra flexible precision test cables CBL 2FT SMSM SMA 2 11 27 69 95 Engineered to be a workhorse for your day to day test operations these Gararreem SMA ie ae j j i ifi CBL 5FT SMSM SMA 5 2 5 27 77 95 triple shielded cable assemblies are qualified to at least 20 000 bends gape ava a ee employ an advanced strain relief system and are equipped with CBL 10FT SMSM SMA 10 4 8 F 87 95 passivated stainless steel connectors so you can rely on them to e a MHA E flex connect and disconnect over and over and over again CBL 25FT SMSM SMA 25 117 27 139 95 They re so rugged each test cable is backed by our 6 month guarantee GB SELSMNMA SMALON 3 a o a j j i CBL 4FT SMNM SMAtoN Type 4 1 6 27 112
10. P O Box 350166 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web TM I The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com IF RF MICROWAVE COMPONENTS Patent Pending 403 Rev L joe Besser Associates Web Classroom TELE oeus tre x Learn Work Enjoy the benefits of RF training via web conferencing e No travel expenses e Shorter sessions only 90 minutes each day e Keep up with your projects meetings etc e Live sessions interact with instructor e Instructor can adapt presentation based on student feedback Here s how it works e Log in to the web conference at the start of each session audio is delivered via the computer speakers e Follow along and take notes PDF copy of manual included e Not just Powerpoint the instructor can share simu lations and other applications from their computer e Ask questions via the chat window at any time or email between sessions Enjoy the benefits of live classroom training with no travel expense and minimal disruption to your schedule Upcoming Web Classroom Courses e EMC Shielding Grounding Techniques for Chip amp PCB Layout October 26 30 449 per person Five 90 minute sessions earlybird prices shown Register by the earlybird deadline to receive this price See schedule for dead line
11. September 15 17 2009 Orlando FL CALL FOR PAPERS APMC2009 Asia Pacific Microwave Conference Singapore Conference Dates December 7 10 2009 Paper Submission Deadline June 19 2009 Topics Topics include Antenna and array designs Computational electromagnetics and CAD packages GPS Duplex GPS and their applications HDTV sys tems compatibility of various systems Passive and active microwave components devices circuits and 10 High Frequency Electronics MEETINGS amp EVENTS modules MMIC hybrid IC and other packaging tech niques High power microwave solid state devices Microwave and millimeter wave systems and networks Exotic and synthetic microwave materials ZigBee WiFi UWB and other wireless access systems Mobile communications TD SCDMA and other techniques EM measurement and instrumentation techniques EMC management and measurement EMC modeling and simulation Signal and power integrity Electromagnetic field theory Wave scattering Tera Hertz wave characteristics Microwave Photonics and optoelectronics Nano plasmonics and applications Indoor and outdoor wave propagations Remote sens ing terrestrial and satellitebased systems IC PCB and system EMC RoHS and other green manufacturing techniques Any other relevant topics Information Authors are requested to submit a preliminary paper up to 4 pages in length including title author s affiliation abstract figures and references One add
12. digital baseband _ Quadrature demodulator Adaptive correction l see bi abil Figure 13 Digital predistortion system both in the linearizer and main balanced power amplifier operated in Class AB mode a 12 15 dB improvement of ACLR for the signal with peak to average ratio PAR of 6 5 can be achieved depending on how close the device operation mode is to saturation The concept of a feedforward loop with its high can cellation performance can be used for a predistortion lin earizer implementation Since the feedforward loop is placed in front of the main amplifier the linearity and power requirements of the error amplifier are reduced significantly compared to the conventional feedforward system In this case the delay line and coupler losses are less significant factors affecting the amplifier perfor mance Figure 12 shows the simplified schematic diagram of a power amplifier module with the feedforward distor tion linearization using five identical power amplifiers based on MRF5821090 LDMOS devices 37 For a for ward link four carrier WCDMA signal at 2 35 GHz the ACLR was enhanced by about 7 dB at 5 MHz offset and the total efficiency of 12 7 was achieved at an average output power of 47 8 dBm backed off by 10 8 dB from the total peak power of 720 W Figure 13 shows the block schematic of a digital pre distortion linearizer where the predistortion algorithm is based on an initially measured PA ampl
13. ed with the wide bandwidth of the signal phase by apply ing modulation feedback in the in phase J and quadra ture Q Cartesian baseband components Figure 18 a shows the basic block diagram of the Cartesian loop trans mitter with two identical feedback loops for J and Q chan June 2009 51 High Frequency Design LINEARIZATION METHODS Quadrature modulator and Upconverter Quadrature downconverter and demodalater Chiedrature madulmor and upeonverier Chadrature downconverter and demodulator Figure 18 Digital predistortion system nels 12 59 In this case the sampled output signal is quadrature downconverted and demodulated to Cartesian co ordinate signals amplified and then subtracted from the corresponding input signals to form a distorted error signal which is complementary to the distortion signal at the PA output after being filtered and upconverted The amount of the distortion reduction is equal to the loop gain and is high inside the passband of the loop filters The phase shifter is necessary to control the phase delays which cause rotation of the signal constellation The band width of the Cartesian components is narrower than that of the RF signal however errors in the feedback loop are not corrected and feedback components must be as linear as the desired loop linearity The Cartesian feedback can be used to linearize multicarrier power amplifiers improv ing output spectrum by 10 30 dB 60 Fur
14. lt 1ft Vacuum chuck X Y stages X Y Z probe positioners Top Plate Z lift Vacuum Accessory Manifolds 6 5X 112 5X Stereo Zoom Microscope Adjustable Halogen Illuminator Vacuum Accessories e Compatible with 40GHz probes e Accessories for Thermal Chucks and Probe Cardse Compatible with Magnetic Mount Positioners Test wafers microstrip packages and surface mount components Personal Probe Station Very Low Cost High Function J microTechnology 3744 NW Bluegrass PI This calibration kit model number CKA87 53 is designed for use with network analyzers cover ing from DC 3 0 GHz This kit contains 2 preci sion 50 ohm terminations a precision open and short Price of this kit is 579 00 list For more Portland OR 97229 503 614 9509 503 531 9325 FAX www jmicrotechnology com A Probe Station On Every Bench Get info at www HFeLink com information www eagle 1st com kits nsf Stocking distributor www rfimage com CREEP Voice 928 204 2597 Fax 928 204 2568 Sedona AZ 86340 Get info at www HFeLink com June 2009 41 3 D EM SIMUL ATOR Figure 5 Analysis of the 3 D EM effects of bond wires flip chip solder balls bumps and packages can be includ ed in the MMIC RFIC and System In Package SIP design flow as a connector library for use in sig nal integrity analysis and design of high speed serial channels The next example shows a simu lation of
15. with an external TTL control board and BNC female connectors Model 674043063 offers a dynamic range of 63 dB in 1 dB steps over a fre quency range of DC 2 GHz Attenuation accuracy is 0 5 dB or 2 of programmed 1 50 1 maxi mum VSWR and 3 0 dB insertion loss The switching speed is 10 mil liseconds and TTL control comes via a 10 pin connector with a latch Other impedance and connector options are also available BroadWave Technologies Inc www broadwavetech com Non Linear Transistor Library Modelithics Inc has announced the release of an enhanced version of the Modelithics NLT Library version 4 0 now with support for new TriQuint Semiconductor GaAs pHEMT and HFET models among other updates The Modelithics NLT Library enables RF designers to model key performance parame ters with high accuracy eliminating the expense or time necessary with PC board prototyping The NLT 4 0 upgrade will be forwarded free of charge to all customers currently under a Modelithics Platinum Maintenance contract for either the NLT Library or the Modelithics Library Complete for ADS Anatech Electronics introduced the Model S2065 notch filter for use in the television broadcast band that reduces the level of undesired sig nal by providing an extremely high level of signal rejection The Model S2065 has 3 dB passbands of DC to 750 MHz and 850 to 1200 MHz rejection at 800 to 806 MHz greater than 70 dB return loss greater than
16. 95 With low insertion loss and very good return loss you can also rely on ga aer et lin E o A getting good performance over the wide DC 18 GHz band Visit OUr CBL 15F SMNM SMAtoN Type 15 73 27 156 95 i i i CBL 2FT NMNM N Type 2 1 1 27 102 95 website to choose and view comprehensive performance curves data BESETNMNM Nee iy ae sheets and environmental specifications CBL 6FT NMNM N Type 6 3 0 112 95 Mini Circuits we re redefining what VALUE is all about eeu Nee ie an oF aoe CBL 20FT NMNM N Type 20 9 4 27 178 95 yi CBL 25FT NMNM N Type 25 11 7 27 199 95 we tougn Armored Cables are steel triple shielded Female to Male CBL 2FT SFNM SMA F to N M 2 tel 27 119 95 bends They re so rugged they can CBL 3FT SFNM SMA FtoN M 3 15 27 124 95 even pass a crush test of a 600lb CBL 6FT SFNM SMAFtoN M 6 amp 6 3 0 oF 146 95 nitrogen tank over the cable 1000 ARMORED CABLES Male to Male times without any change in APC 6FT NM NM N Type 6 3 0 27 181 95 APC 10FT NM NM N Type 10 4 8 Zi 208 95 electrical performance APC 15FT NM NM N Type 15 1a 27 243 95 GU Get info at www HFeLink com Metric Sizes Available On Our Website L a Mini Circuits ISO 9001 ISO 14001 AS 9100 CERTIFIED circuits co ts Mini Circuits will repair or replace your test cable at its option if the mo connector attachment fails within six months of shipment This guarantee NTEE excludes cable or connector interface damage from misuse or abuse
17. GHz and 1 22 GHz 1 Hz resolution 10 MHz external reference 17 and 20 dBm output power Phase noise of 105 dBc Hz 100 kHz offset at 20 GHZ MLSN Series Synthesizers Narrowband frequencies covering 2 GHz to 16 GHz in bands 1 Hz resolution 10 MHz external reference 10 to 13 dBm output power Phase noise of 120 dBc Hz 100 kHz offset at 2 GHz MLSL Series Synthesizers Low Cost 2 GHz and 3 GHz tuning band synthesizers covering the 2 to 12 GHz frequency range 100 kHz to 500 kHz resolution 10 MHz external reference 10 to 12 dBm output power Internal crystal option Dual RF output option Phase noise of 120 dBc Hz 100 kHz offset at 8 GHz RoHS Compliant www microlambdawireless com MICRO LAMBDA WIRELESS INC Look to the leader in YIG Technology 46515 Landing Parkway Fremont CA 94538 510 770 9221 sales microlambdawireless com Get info at www HFeLink com High Frequency Design 3G SPECIFICATIONS 3 ae lowe C 46 a lt a Tx power 20 dBm lt REFSENS gt 10 dB MHz Test Conditions Parameter Unit Band ll V Band Ill VIII Table C band Freq range 1 DPCH Ec Cam Fuw F Band I Miz Table D Out of band blocker OOB Intermodulation wideband and narrow Freg range Freg range 3 Tx power 20 dBm input voltage If using a traditional two tone signal as input V we have V A cos t A cos t The second order compon
18. blocker frequency is between 5950 and 6130 MHz the CW blocker has a level of 15 dBm As the duplexer attenuation at the blocker frequency is around 30 dB P w is 45 dBm With P 117 dBm which is 16 1 dB below noise floor N IIP3 is calculated as ITP3 0 5 Payw 2Pry Ping 5 dBm F AF 2 In this case the blocker is defined as 15 dBm CW sig nal and the duplexer loss at this frequency is 30 dBm Then P w is 45 dBm Similar to the previous case to have P 3 16 dB below the maximum allowed noise floor N IIP3 is calculated as IIP3 0 5 2 Pow Pry Pima 5 dBm V Measured Results The IIP2 and IIP3 have been fully verified on a Broadcom WCDMA transceiver IC The results of IIP2 at The Power Of Creativity TRU has been creating pioneering solutions for RF and microwave applications for over 50 years Complex demanding solutions for the aerospace military semiconductor medical instrumentation and commercial industries Interconnect systems assemblies and components Sophisticated solutions that perform across a spectrum of environments from clean rooms to space Solutions that harness the power of creativity Visit us at trucorporation com TRU gt gt TX frequency and IIP3 wideband intermodulation are shown in Figures 6 and 7 respectively Both results show that the receiver has excellent linearity VI Conclusion The system analysis of nonlinearity of a WCDMA receiver
19. cable is the result of a newly engi neered dielectric material pro duced by Times Microwave SSPA and Transmitter Introducing MITEQ s new medium power X band rack mount solid state power amplifier SSPA and transmitter systems The new PA R Model series is an SSPA rack mounted system designed using a modular approach to provide flexi ble solutions to meet a variety of applications These SSPA systems provide for over temperature over current and high output VSWR safety protection Status and con trol is achieved via the remote RS422 485 bus or Ethernet inter 58 High Frequency Electronics GaAs HEMT LNA Die Hittite Microwave Corporation has introduced a new GaAs HEMT MMIC low noise amplifier die the HMC ALH508 that will allow designers to address E band appli cations from 71 to 86 GHz The die is ideal for automotive radar military Systems The material called TF5 is thermally mechanically bal anced and is the most significant breakthrough in coaxial cable tech nology in decades Phase Track II s TF5 is the most stable dielectric material available and virtually eliminates the wide phase changes that other high performance PTFE dielectric cables have with temper ature changes Times Microwave Systems www timesmicrowave com FILTER KITS Q OO select any 8 models on ly receive 5 of each total 40 pieces Over 120 Low Pass and High Pass models 80 MHz to 13 GHz g Measuring only 0 12
20. dB 2 IIP2 With In Band Blocking One of 3GPP test cases is adjacent blocker test in which the modulated downlink blocking signal is injected into the receiver with offset frequency at 5 MHz By using method similar to the one discussed above with an adjacent blocker signal Test Model 1 the corrected for mula for IIP2 with a WCDMA downlink signal is P 2 P IIP2 3 87 dB 3 im2_adj IIP2 With Out of Band Blocker OOB In OOB test cases depending on the blocker frequen cy the IM2 products of the OOB blocking signal and TX leakage signal may fall into the RX band The power of IM2 can be calculated using the formula in Equation 4 Pima oon Pow Pis HP2 4 lll Third Order Nonlinearity For third order nonlinearity the 3GPP intermodula tion test case defines the IP3 requirements of the receiv er However the blockers such as adjacent channel block ers narrow band blockers out of band blockers etc either leak into the RX channel or cross modulate or intermod ulate with the TX leakage signal the distortion products falling into wanted channel The receiver needs to have good linearity performance under all blocker conditions IIP3 With Two Tone Test Assuming the input signal as V with two tone signals V A1 cos t A2 cos t The output signal y t can be expressed as 20 High Frequency Electronics freq MHz IM2 modulated Power 45 722 Figure 3 Low frequency output of WCDMA
21. in tough Get info at www HFeLink com 0 2 x 0 18 ke Mini Circuits ISO 9001 ISO 14001 CERTIFIED environments including high ESD levels the SIM mixers are competitively priced for military industrial and commercial applications Visit our website to view comprehensive performance data performance curves data sheets pcb layouts and environmental specifications And you can even order direct from our web store and have it in your hands as early as tomorrow Mini Circuits we re redefining what VALUE is all about U S Patent 7 027 795 d RoHS compliant all al F P O Box 350166 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web site do The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com Patent Pending IF RF MICROWAVE COMPONENTS 428 RevA High Frequency Design LINEARIZATION METHODS 865 to 895 MHz 25 For very high cancellation require ments over wide temperature and drive conditions an adaptive feedback network can be used to monitor the rel ative amplitude and phase at the outputs of the power amplifiers and drive the voltage variable attenuators and phase shifters to maintain the optimum conditions Predistortion Linearization To achieve simultaneous high efficiency and low dis tortion operating conditions of the power amplifier when the linearity
22. into ever smaller form factors The resultant 3 D EM proximity effects now must also be considered by circuit and module designers Discovering and fixing these prox imity issues during hardware testing often occurs very late in the design process which is too expensive EMPro 2009 the new EM platform from Agilent EEsof EDA brings powerful 3 D EM simulators within an efficient and intuitive 3 D design environment that is easily accessed by circuit and module designers in the indus try leading Advanced Design System ADS design flow The dedicated 3 D design environ ment enables the intuitive creation of 3 D parameterized components such as metal shields packages laminates dielectric bricks and interconnects for insertion into the ADS 2 D circuit layout environment The resulting With EMPro 2009 high per formance time domain FDTD and frequency domain FEM EM analysis is integrated with all the other Advanced Design System ADS capabilities combined circuit 3 D EM simulation will then reveal any unexpected interactions among the components Unlike a design process that uses standalone 3 D EM tools the parameterized 3 D EM components in ADS enable quick and convenient adjustments to the component geometries providing insight into the EM effects on the design without leaving the design flow 38 High Frequency Electronics Figure 1 EMPro 2009 creates a 3 D param eterized component metal shield that inte gra
23. is discussed The formulas for IP2 and IP3 for all test cases are presented and applied The formulas are useful for system analysis The assumed margins can be different in each test case Also the formulas may be slightly different from other published results due to dif ferences in simulation setup Acknowledgment The authors would like to thank their colleagues at Broadcom Corporation for support discussion and review References 1 http www 3gpp org 2 http www broadcom com 3 Harald Pretl Linus Maurer Werner Schelmbauer and Robert Weigel Linearity Considerations of WCDMA Front Ends for UMTS Microwave Symposium Digest IEEE MTT S Volume 1 11 16 June 2000 pp 433 436 4 Walid Y Ali Ahmad Effective IM2 estimation for two tone and WCDMA modulated blockers in zero IF RF Design April 2004 5 T Ranta J Ella and H Pohjonen Antenna switch linearity requirements for GSM WCDMA mobile phone front ends Wireless Technology the European Conference 3 4 Oct 2005 pp 23 26 6 Qizheng Gu RF System Design of Transceivers for Wireless Communications Springer Author Information Chris W Liu received his M Sc from University of Montreal Canada and B Sc from Tianjin University China Chris has more than 17 years experience in the wireless communications He is currently with Broadcom as Principal Systems Engineer Chris can be reached by email at chrisl broadcom com Morten Damgaard re
24. many cables are measured and cut on site with field installed connectors To address the need for maintain ing high performance and precision installation in the field cable and connector manufacturers offer appro priate tools and fixtures These acces Figure 2 The Tuff Grip adapters from Times Microwave Systems pro vide physical assistance for the attachment of field test cables sories allow the installation techni cians to assemble connectors to cables with a precision and reliability that approaches in house manufac turing Test Cables A special subset of cable assem blies are test cables which are designed for repeated usage high flexibility and reliable connection over many mating unmating cycles Specifications are best determined by consulting the user s manual or applications support staff at the test equipment manufacturer Field testing requires yet another group of cables and accessories spe cial adapters Broadcast mobile radio and wireless base station equipment often uses large size coaxial cables and connectors while test equipment generally has Type N SMA or other small size connectors with well defined characteristics to very high frequencies Thus adapters are an essential part of field testing Among the products offered is a special grip from Times Microwave Systems shown in Figure 2 Summary These basics should help you begin the process when specifying cable assemblies for
25. nanotubes An array of these struc tures can be used to conduct heat from the die or from specific areas of the die to a heat dissipating pad on the top or bottom of a package With the short lengths involved and encapsulation with a package this is con sidered one of the most practical near term applications for carbon nanotube technology To illustrate some of the recent developments in the packaging we include the following news items N ll electronic products are either getting smaller or High Frequency Electronics SiP SOC Package Description SOIC SSOP TSSOP QFP small Outline IC 0 05 in pitch shrink Small Outline Package 0 025 in pitch Thin SSOP reduced vertical dimension Quad Flat Pack terminal pins four sides pitch may be 0 4 mm to 1 0 mm Quad Flat No leads 0 5 mm pitch typical Leadless Chip Carrier usually high pin count 0 7 mm pitch Bump Chip Carrier Solder bump version of LCC Ball Grid Array very high pin count pack age 45 um pitch typical Low Temperature Co fired Ceramic accom modates a wide range of structure options Die mounted substrate up metallized top layer down shorter distance from top side connections to bumps or solder balls substrate may have top side heat sink QFN LCC BCC BGA LIC Flio Chip Many specifications include pin count e g SO 8 TSSOP 24 QFN 24 etc Many styles include sub group or special material nota tions e g TQFP thin QFP
26. students invents a new one It is far far easier to ignore the rules of grammar and style than to try to teach them Prof David M Drury University of Wisconsin Platteville Editors Comments David thanks for mentioning the nonbreaking space which is the key to keeping numbers and units together as the text wraps to the next line In MS Word use the command CTRL SHIFT SPACE or look up the proper action in other programs I also apologize to grammatical experts everywhere for all the little errors we make while preparing a wide variety of material for each issue For example I know we miss a lot of those pesky hyphenated modifiers in our magazine While 5 V source is grammatically correct it is very easy even for professional editors to look past them when the context is perfectly clear Finally we still have not found any style guide that recommends the no space usage Any help to identify the origin of this practice and satisfy our curiosity would be appreciated Gary Breed Delivering up to 1 kW pulsed and continuous power for RF applications worldwide Part Freq Pout Gain Eff M A COM Tech nology Solutions manutactures a broad tartare ene E AES range of high power RF transistor products using a variety MAPRSTO912 350 960 1215 350 96 50 of technologies for commercial and military applications MAPR 000912 500S00 960 1215 500 9 50 MRF10502 1025 1150 500 84 40 e Discrete devices modules and pallets fr
27. switches you could start saving up to 90 right away How Our RF microwave mechanical switches use breakthrough advanced technology to eliminate springs and other life shortening moving parts The result Switches that are so reliable they re backed by our 1 year 10 million cycle warranty extendable to a 10 year sie i 10 year agreement 100 million cycle warranty In fact they re so robust we ve even tested them in sleep mode for required up to four years without a single start up failure Plus they still deliver the superior performance See website for details good impedance matching low insertion loss and high isolation up to18 GHz you ve come to expect from any of Mini Circuits high quality components For details please see our website Outstanding performance Unmatched reliability Guaranteed It s all part of our commitment to giving you the best in value Mini Circuits Your partners for success since 1969 Protected by patents 4 908 588 5 272 458 6 650 210 SER E _ Jh ms BE Q Le MIIN G IrcuIIts Get info at www HFeLink com se ee P O Box 350166 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web site N 4m The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com Patent Pending f gt e F RFE MICROWA OMPOI 460 rev B ADT WUE 4 LL N
28. the direct conversion architecture handsets the direct conversion receiver DCR architecture is commonly used due to its simplicity and low cost where interstage filters are completely eliminat 3G WCDMA mobile a 103 7 104 7 TX power 24 dBm Table A Sensitivity requirement ed However with less fil tering the linearity requirement for a direct conversion receiver is very critical It is essen tial to define system linearity requirements properly for the receiver to meet the perfor mance requirements In FDD mode the transmitter and receiver are continuously working at the same time and the transmitted signal leaks into the receiver due to the limited TX to RX isolation of the duplexer The transmitter is possibly the strongest interferer for the companion receiver in the handset and poses the most stringent linearity requirement for the receiver I 3GPP Test Cases A number of test cases are specified in 3GPP for a WCDMA receiver and each test case has different test conditions Therefore nonlinearity performance requirements are needed of the receiver in each case The relat ed test cases are summarized in Tables A F and used throughout the following discussion These test cases require the receiver to meet certain BER performance with these defined interferers For RF system design the requirements have to be interpreted into RF parameters such as noise figure NF com pression point P 4
29. the wanted signal The allowed total noise floor N is 14 dB higher than Nmax 10 this test case therefore N 90 2 dBm The allowed P ear will be P er N 16 106 2 dBm From the equation 10 IIP3 can be calculated aclr IIP3 TEP 2 aclr 20 75 2 P 1 6 PAR 7 2 dBm We also need to check the IP3 requirements due to Cross modulation Based on the cross modulation formu la derived in previous section equation 8 the cross mod ulation product can be calculated P vossmod 2Prx Pag 21IP3 7 4 108 27 dBm crossmo The cross modulation product with IP3 7 2 dB is 18 dB below the N and not a problem Then Pesos due to adjacent channel blocker can be assumed 16 dB below the N as well Then IIP2 at 5 MHz adjacent channel IIP2_adj is obtained IIP2 dBm Pryyo adj 2 Pag 3 87 dB 15 dBm 26 High Frequency Electronics Adjacent Channel Case 2 The blocker is present at 5 MHz offset with a power level of 25 dBm and the input wanted signal is 41 dB higher than sensitivity In this case N 63 2 dBm the allowed Pelr 18 Pap N 16 79 2 dBm aclr The IIP3 and cross modulation product are calculated below aclr adj IIP3 s P 20 75 2 P 1 6 PAR 6 2 dBm P rossmod 2Prx Pag 211P8 9 67 110 7 dBm Similar to the adjacent channel blocker case 1 IIP2 can be derived for the adjacent channel blocking case 2 IIP2 dBm Pryyp
30. to the conventional digital predistortion technique less number of iterations is required for convergence with simpler algorithm The envelope feedback linearization is a simple and popular technique to improve the distortion associated with the amplitude nonlinearity of the power amplifier 44 55 The basis of this technique shown in Figure 17 a is to compare the envelopes of the input and output signals and to control the instantaneous gain of the power amplifier so as to minimize the difference between them In this case the RF input and output signals are sampled by the corresponding input and output couplers and then each fed to the proper input of the differential amplifier The difference signal representing the error between the input and output envelopes is used to drive a variable gain amplifier to modify the envelope of the input signal which drives the power amplifier The lin earization effect depends on the nonlinearity of the detec tors especially at low signal levels the bandwidth time delay and phase gain characteristic of the feedback loop and the sensitivity of the variable gain amplifier Therefore where the AM AM distortion is dominant the two tone intermodulation products are typically reduced by up to 10 dB To provide a significant improvement in the nonlinear distortion cancellation both RF feedback and envelope feedback methods can be combined 44 Figure 17 b shows the envelope feedback power amplifi
31. two power amplifiers in a balanced configuration using two 90 degree hybrids is shown in Figure 10 a 28 In this case the upper power amplifier is operated in a linear Class A mode while the lower power amplifier is biased in a nonlinear Class AB or B mode to generate the proper intermodulation products by controlling the input power and device bias conditions The phase shifter in a lower amplifying path is necessary to optimize the level of the fundamental components in the resulting output spectrum Since both devices present approximately the same input impedances a low input return loss is provid ed because the most of the reflected power flows into the isolated port Figure 10 b shows the practical microwave microstrip implementation of a two path predistortion linearizer with an input 90 degree branch line hybrid June 2009 47 High Frequency Design LINEARIZATION METHODS amplifier Figure 11 Power amplifier module with linearizer coupler a nonlinear power amplifier in a lower path and an output directional coupler 35 The microstrip trans mission line in a lower amplifying path having a required electrical length compensates for the additional phase shift provided by the active device whereas the required amplitude conditions are realized with the coupling coef ficient of an output coupler subtracter to be chosen As a result for a Ku band multicarrier 4 5 W power amplifier the phase deviation of a 12 dBm sig
32. your module system or test application June 2009 57 Type N Panel Receptacles San tron Inc has announced the release of a UG 58 A U Type N panel receptacle that features sin gle piece body construction The seamless UG 58s are manufac tured using a custom machine designed and built by San tron for fully automated assembly The UG 58 A U panel receptacles have a frequency range of DC 11 GHz and a nominal impedance of 50 ohms They are rated for operating volt ages of 1000 V RMS and have a maximum dielectric withstanding voltage of 2500 V RMS at 60 Hz at sea level The receptacles are designed for a temperature range of 65 C to 165 C and meet inter face standards in accordance with MIL STD 348 Pricing for UG 58 A U panel receptacles start at 1 49 in quantities of 3 000 San tron Inc www santron com face port An event log is continu ously updated with time stamped records of significant events MITEQ offers solid state power amplifiers in C and Ku bands as well as antenna mounted outdoor configurations MITEQ Inc www miteq com Interconnect Systems Samtec s high speed Razor Beam interconnect systems are designed to maximize PCB real estate with their slim ultra fine pitch low pro file designs These space saving sys tems are currently available in super fine 0 4 mm pitch ST4 SS4 Series and self mating 0 635 mm pitch LSS Series designs A 0 5 mm pitch LSHM Series system f
33. 09 www hightrequencyelectronics com Vol 8 No 6 Hish FREQUENCY You can view this issue page by page or click on any of the articles or columns in the Table of Contents below 16 38 Ea 3G specifications 3 D EM simulator linearization methods IP2 and IP3 Nonlinearity 3 D EM Simulator is Linearity Improvement Specifications for Integrated with ADS Techniques for Wireless 3G WCDMA Receivers to Lower the Cost of Transmitters Part 2 Chris Liu and Design Andrei Grebennikov Morten Damgaard How Siang Yap and Hee Soo Lee product coverage 30 New Products technology report Developments in 54 Packaging RFIC tutorial MMIC LTCC SiP SoC Guidelines for Choosing RF Microwave Coaxial Cable Assemblies 34 Gary Breed product coverage Featured Products Regular Columns 6 Editori 42 IntheNews 63 Advertiser Index 8 Meetings amp Events 58 New Products 64 Design Notes On the cover On page 38 readers can find the story behind EMPro Agilent s new 3 D electro magnetic simulation tool that integrates time and frequency domain EM analysis capabilities with the company s Advanced Design System ADS Artwork provided by Agilent Technologies June 2009 5 6 Hih FREQUENCY Gary Breed gary highfrequencyelectronics com Tel 608 437 9800 Fax 608 437 980 Publisher Scott Spencer scott highfrequencyelectronics com Tel 603 472 826 Fax 603 471 0716 Associate Publisher Tim Burkhard tim highfrequenc
34. 14 dB It handles an RF input power of 5 W and will operate over a temperature range of 40 C to 80 C The Model 82065 is a cus tom product and can be specified with different electrical and physi cal characteristics Anatech Electronics Inc www anatechelectronics com New Thick Film Literature Anaren Inc announced that it has developed a free informational kit developed to introduce design engi neers manufacturing engineers and purchasing professionals to the company s thick film ceramic circuits capabilities Anaren s thick film service is offered through the company s Anaren Ceramics sub sidiary located in Salem New Hampshire The kit includes a design guide and information on the company s experience with thick film across the defense com mercial wireless and consumer electronics sectors Modelithics Inc www modelithics com Anaren Inc www anaren com Professional Suite and introduces higher simulation efficiency and 62 High Frequency Electronics HigH FREQUENCY Advertiser Index NY aE haa seraegereinnietee Page COMIDO viisas Page Anatech Microwave Company ccccsccccsssccecseceeeeeeeeeees 27 Microwave Components cccccccssececeeseeceeeeeceeeseceeeeseees 39 Antenna Systems Conference ccccccccssececceeeceeeeeeeeeees 35 Te GU over ntscctssecs eae taescumed oem tesesute saaeeseoorancoeueeseensaaees 2 3 ANN EN aE EE E E 19 Mi ni Circuits 55 cc saten
35. 50 modulator enables 10 Hz frequency increments and the integrated output attenuator pro vides 47 dB output gain control with 1 dB step resolution The device also features monitoring output and output disable control capabilities Furthermore the ADRF6750 modulator offers best in class RF performance including an output compression P jp of 8 5 dBm and output IP3 of 21 dBm The ADRF6750 modulator is sam pling now with volume production scheduled for July 2009 It is avail able for 5 75 per unit in 1000 unit quantities Pole Zero Corp www polezero com advanced pHEMT process and packaged in a miniature 4 lead SC Analog Devices Inc www analog com 60 High Frequency Electronics Surface Mount Pin Diode Switches Aeroflex Metelics is pleased to announce the release of a family of surface mount silicon PIN diode SP2T switches with power han dling capability up to 100 W C W incident RF power They are opti mized to function in two frequency bands of interest 20 700 MHz and 400 4000 MHz and are available in compact surface mount pack ages measuring 8 x 5 x 2 5 mm The MSW2000 series of surface mount PIN diode SP2T switches is manufactured using Aeroflex Metelics proven hybrid manufac turing process incorporating high voltage PIN diodes and passive devices within a ceramic substrate Both asymmetrical and symmetri cal SP2T topologies are offered These products are available in high volume tape r
36. Frequency Design 3G SPECIFICATIONS mum allowed noise floor N max In general it is good to keep IM2 due to TX leakage between 13 to 16 dB below Nmax 50 that the IM2 product degrades the sensitivity by only 0 1 to 0 3 dB In this paper 16 dB is chosen for better performance If so P shall be less than 120 dBm that is 16 dB below N nax From equation 2 IIP2 at the TX frequency can be derived as IIP2 dBm 2 P dBm P n 15 722 dB 48 dBm m2_tx Therefore the IIP2 requirement due to TX leakage for Band I at the RFIC input should be better than 48 dBm at the TX frequency With IIP2 48 dBm adding all other impairments the overall sensitivity degradation is less than 0 6 dB Further improvements in the PA phase noise and duplexer attenuation will continue to minimize the degradation Adjacent Channel Blocker Case 1 The adjacent blocker appears at 5 MHz offset with a power level of 52 dBm at antenna connector Since the input wanted signal is 14 dB higher than sensitivity it is reasonable to assume that the degradation due to the total interferer power shall be less than 14 dB However in practice margin is needed Note that with an adjacent channel blocker the major contributor of in channel distortion is from ACLR rather than IP2 First of all we need to determine the power leakage into the channel due to adjacent channel blocker P ar To minimize the impact of ACLR in this paper P is kept 16 dB below
37. I uete Glo FEATURED PROD Military amp Space com s SyncServer 300 S350 NTP Time Server The SyncServer S300 S350 SAASM NTP network time servers will be available in July 2009 native to expensive arbitrary waveform generators AWGs and an excellent choice for applications ranging from frequency agile threat emitters in an EW training Symmetricom Inc www symmetricom com platforms to ATE systems and synthetic aperture radar systems Spinnaker Microwave Inc Crystal Oscillators www spinnakermicrowave com High Gain SiGe C GPS LNA In challenging environments GPS receiver Cs with integrated LNAs often come up short when it comes to noise performance and resultant system sensitivity External LNAs like NEC s new UPC8240T6N pro vide an effective solution The UPG8240T6N can be located near the antenna to reduce trace losses and when combined with dis tributed filtering can significantly improve noise performance Based on NEC s UHS4 ultra high speed SiGe C bipolar process the UPC8240T6N is designed to run on supply voltages as low as 1 6 V so it is ideal for use with new gen eration GPS engines It delivers high gain low noise and low cur rent consumption It also features a built in Power Save function a robust bandgap regulator an out put matching network and ESD protection The UPC8240T6N is housed in a 6 pin RoHS compliant 1 5 mm square package Blil
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39. SIP is not complete until the effects of packaging and the interconnects between them such as wire bonds solder balls or solder bumps are con sidered Traditionally designers had to draw and analyze them in a sepa rate 3 D EM tool and then laborious ly import the results back to the IC or SIP circuit design environment for a combined analysis Now you can effi ciently create these 3 D components in EMPro to be used with 2D circuit layouts in ADS in the co design of IC package laminate and module with circuit and 3 D EM simulation in a streamlined design flow Summary Unlike standalone FEM or FDTD 3 D EM tools EMPro 2009 includes both FEM and FDTD simulators under the industry s most modern and efficient 3 D EM design environ ment to cover the widest range of applications It allows for cross verifi cation of time and frequency domain 3 D EM results to double the design er s confidence in the simulation Its integration with ADS the leading high frequency circuit design platform provides a combined 3 D EM and circuit design flow in a single high performance design system at substantially lower cost than that of owning and maintaining a collection of standalone tools Author Information How Siang Yap is the product manager for the Advanced Design System EDA platform in Agilent EEsof His team develops design solutions for the RF SiP MMIC RF mixed signal board antennas and RF microwave components target
40. X 0 06 these tiny hermetically sealed filters utilize our advanced a Low Temperature Co fired Ceramic LTCC technology to offer superior thermal stability high reliability Tiny and very low cost making them a must for your system requirements Visit our website to choose and 0 12 x0 06 x0 04 view comprehensive performance curves data sheets pcb layouts and environmental specifications And you can even order the KWC LHP Filter Kit direct from our web store and have units in your hands as early as tomorrow Mini Circuits Your partners for success since 1969 5 RoHS compliant E E E m Mini Circuit a Get info at www HFeLink com int ircu l Ss minicircuits co ISO 9001 ISO 14001 AS 9100 CERTIFIED LF P O Box 350166 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web site a The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com Wii Pao Pong IF RF MICROWAVE COMPONENTS 454 rev A NEW PRODUCT High Power Linear Amplifier Aethercomm Model Number SSPA 0 4 0 6 100 is a high power high effi ciency RF amplifier that operates from 400 to 600 MHz This PA is ideal for military platforms as well as commercial applications because it is robust and offers high power over a 200 MHz bandwidth with excellent power added efficiency This amplifier has a minimum P jp of 100 w
41. a distortion improvement of 10 dB at saturated region if the feedback gain of at least 20 dB is achieved 48 Although a feed back gain of 10 dB results in approximately 10 dB improvement in adjacent channel leakage power at 3 dB power backoff from saturation In contrast for the simple resistive feedback single stage power amplifier the level of the third order IMD components at 2 GHz can be reduced by about 5 dB for the medium signal levels only 49 Figure 14 b shows the circuit schematic of the two stage power amplifier designed for a 3 4 4 2 GHz fre quency bandwidth 50 The output power of 27 dBm was achieved by using a power MESFET device with a gate length of 0 5 mm in the second stage Loop gain was adjusted by changing the coupling in the output direc June 2009 49 High Frequency Design LINEARIZATION METHODS amplifier Figure 15 Power amplifier module with feedback feed forward linearization Error amplifier Figure 16 linearization tional coupler whereas a phase shift of 180 in the feed back path at midband was obtained using a microstrip line with the proper electrical length The predicted open loop gain was 19 dB at 3 7 GHz decreasing to 13 dB at the upper bandwidth frequency The shunt resistor at the input of the first MESFET device is necessary to improve the input return loss As a result for the closed loop con figuration an improvement of the third order intermodu lation compone
42. able CONFERENCE PROGRAM Team i Government Discounts avallable S Te 75 Resister al wew antennasonime com or call 800 803 9488 Vier wwwiantennasoniinc com or contact Heather Krier at heatherkiaimioweboom com eS 7Rea 7 I eae Re ee i oe econo Wetcom Conenmiimcet borer Cite n 27855 FF Crthmd Rd Ste POD Greene Viime CO EU phone 7 Get info at www HFeLink com 10 to 6840 MHZ SME ws Want a miniature surface mount shielded plug in or rugged connectorized voltage controlled oscillator with the right stuff for your project Contact Mini Circuits From custom designs to Mamet ae standard catalog models always in stock we ll supply extra RoHS models available consult factory robust 100 tested VCO solutions you need at a price you can afford Choose from narrow to broad to octave bandwidths Select from models with low phase noise linear tuning load insensitivity dual output wide modulation bandwidths or 5V models optimized for PLL ICs and synthesizers And pick from an innovative array of miniature surface mount packages as small as 0 25 square all featuring our exclusive glue down process on each circuit component to give you ultimate reliability during reflow soldering You can quickly find the model you need using our online catalog or The YONI2 Search Engine at the Mini Circuits web site Just enter your specs into YONI2 click and immediately start evaluating suggested VCO solutions using th
43. adest range of applications from electri cally small components to electri cally large antennas They also provide convenient cross valida tion from both time and frequen cy domain 3 D EM analyses for the same structure helping designers to gain insight and to have greater confidence in their designs without needing to labori ously re enter designs and simula tion setups in separate tools e Efficient import parameteriza tion and setup of complex 3 D CAD designs for 3 D EM simula tion For example multiple simu lations over a family of geometries for a complete cell phone can be done in one batch without long repetitive manual setups for each simulation e Set it and forget it material assignment Drag and drop assign 40 High Frequency Electronics ments onto the imported 3 D object from an extensive material database to set up the simulation Subsequent CAD imports inherit the assigned material properties for even faster simulation startup e Interactive 3 D editing with intu itive context sensitive on screen cues remove the constant need to look away from the drawing to select from cluttered menu picks and dialog boxes allowing design ers to complete the 3 D drawing quickly and efficiently e Direct parameterization by simply typing over any numerical dimen sion with an equation variable the value of which can further depend on multiple other variables This enables linked geometry sweeps or dra
44. adj 2 Pag 3 87 dB 12 dBm In Band Blocker 10 MHz and 15 MHz The input wanted signal is 3 dB higher than sensitiv ity and the blocker at 10 MHz offset has a power level at 56 dBm and 44 dBm at 15 MHz offset Since the offset frequency is far from the carrier there is no concern for ACLR in this case Using equation 3 keeping the IM2 product 16 dB below N IIP2_adj at 10 MHz and 15 MHz are computed TP 249 we Poe 10 mez 2 P19 mg 3 87 dB 12 dBm TP 255 muz Poe 15 Muz 2 Pis muz 3 87 dB 12 dBm Intermodulation For band I the narrow band blocking test case does not apply but for other bands It does in the wideband intermodulation test case one of the blocking signals is a CW tone at 46 dBm while another blocker is a WCDMA modulated signal with power level of 46 dBm The want ed signal is 3 dB higher than sensitivity power level Keeping the IM3 product 16 dB below the N which is 3 dB above Nmax we can compute the IIP3 using equa tion 7 IIP3 0 5 3 P Pima 15 dBm Out of Band Blocker For out of band OOB blocking cases we need to con sider both the second order and third order distortion from the switches that is between the duplexer and the antenna The switches in the front end module generate second and third order nonlinearity components falling in RX band as well Bases on the manufacturer s datasheet it is assumed in this paper that IM2 and IM3 o
45. atts at room temperature Noise figure at room temperature is 15 0 dB maximum This amplifier offers a typical gain of 28 dB with a typical gain flatness of 1 0 dB Input and output VSWR is 2 0 1 maximum Class AB quiescent cur rent is 1 5 amps typical employing a 28 Vdc supply This PA operates 70 package The SKY65050 372LF is available now and priced at 25 cents each in quantities of 10 000 devices Skyworks Solutions Inc www skyworksinc com Microwave Signal Generator Agilent Technologies Inc intro duced a microwave signal genera tor with ultrahigh output power capability that breaks the 1 watt output barrier The Agilent PSG E8257D signal generator option 521 delivers from 24 to 28 dBm specified output power over a fre quency range of 250 MHz to 20 GHz useable down to 10 MHz and eliminates the need for addi tional hardware such as ampli fiers couplers and detectors The Agilent PSG E8257D option 521 is priced at 41 575 Directional Couplers MECA s 715 series directional cou plers feature unique air line con struction that provides for the low est possible insertion loss less than 0 1 dB high directivity 30 dB typ and exceptional VSWR 1 10 1 typ across the 0 800 2 200 GHz and 2 000 4 200 GHz bands Rated for 500 watts average power 10 kW peak Nominal coupling values of 6 10 20 30 and 40 dB available from stock to 2 weeks MECA www e MECA com Integrated Modulator A
46. basic schemes plus new systems still in devel opment Each method has its supporters and each has performance differences compared to the others The question that often comes up is Which one is best My first guess at an answer is None of them First they all deliver much higher data speeds than the technologies they replace Next there are enough differences among them that any serious observer would see that each has its strengths and weaknesses Some pro vide higher data rates some offer a more straightforward evolution from systems already in operation My next guess at an answer is All of them Of course proponents of each technology can point to certain specs and claim that theirs is the best And boy do they make those claims loudly That s not really my con cern what I mean by all of them is that demand for higher speed mobile data services is growing and wireless system operators need to keep work ing to get the technology deployed regardless of which standard they have chosen for implementation There is some concern that having different systems available is a problem but here in the U S where the distribution of handsets is main ly done by the operators and their agents compatibility is a minor issue Other parts of the world have uniform standards for their original voice based systems but even some of these countries regions are allowing ser vice providers to use different technologi
47. ceived his M Sc degree from University of Aalborg Denmark in 1989 He has 20 years of experience doing cell phone RF design semiconductor RF system design and radio architecture design for GSM EDGE WCDMA and multi mode transceivers and radios Morten currently works with Broadcom Corporation in Irvine CA as a Senior Manager of Cellular RF System Engineering He holds 31 U S patents 9 NEGATIVE Gs EVERYTHING IS SHAKING THE PILOT HAS A REDOUT OUR PRODUCTS JUST ENTERED THE COMFORT ZONE Filters Multi Function Assemblies IFMs Components sage Laboratories Inc designs and manufactures RF and microwave components and subsystems for technically demanding applications Sage solutions are targeted at leading edge OEM s and prime contractors in the aerospace defense homeland security medical and commercial markets T E C HN O LO GIES Visit us at sagelabs com 30 TECHNOLOGY REPORT Developments in Packaging RFIC MMIC LTCC becoming more complex in their capabilities To achieve these twin objectives circuits are now being packaged in a wide variety of miniaturized form factors The first step in the process occurred many years ago with the evolution of integrated circuits from dual inline packages DIP to SOIC SSOP TSSOP etc As sur face mount technology grew in popularity numerous pro prietary packaging options were developed for functional modules mixers oscillator
48. com pany will occupy approximately 15 000 square feet of a separate and secured space at the IBM site to produce contactless inlays for a range of markets involving secure identification including mass transit bankcards food healthcare gaming and event ticketing The company will be the first contactless inlay manufacturer in the United States to print silver based antennas on inlays the composition of which is highly resistant to forgery Aeroflex announced it is expanding its communications test capabilities with the strategic acquisition of VI Technology Inc a provider of integrated baseband test solutions specializing in audio video and multi media test Agilent Technologies Inc introduced a new range of integrated curriculum based solution kits for educators teaching analog electronics digital systems and RF com munication classes This further expands Agilent s range of education kits which include solutions for basic elec tronics RF circuit design and digital systems Each solu tion includes carefully designed undergraduate engineer ing courseware a mix of teaching slide sets problem based student labs and industry standard measurement equipment Symmetricom Inc a worldwide leader in precise time and frequency technologies that accelerate the deploy ment and enable the management of next generation networks announced the company has been awarded a contract from ITT Corporation Space Systems Division va
49. d antenna assemblies other RF related subassemblies e Our new state of the art fully automated electroplating facility NADCAP certification in process is designed to serve all your plating requirements for RF components Advanced plating software and z in house X ray capabilities assures your plating specifications are consistently achieved Complementary processes such as vapor degreasing and contact crimping pretinning are also available Our website offers the unique Cable mbly Designer tool to assist with all your cable assembly needs Simply select the cable type connectors testing and marker requirements and click to send the RFQ to us 978 927 1060 ww SOMWMWBA FAX 978 922 6430 ur 0 0001 2008 ay Woman Owned CERTIFI ECC DATA CERTIFIED P O Box 53 Beverly MA 01915 Get info at www HFeLink com TECHNOLOGY REPORT 32 MCM LTCC circuit design By incorporating the wide ly used DuPont Green Tape 951 and 943 systems CAD Design Software s Ceramic Design tool automates DuPont s recommended LTCC processes and significant ly improves cycle time for advanced circuit design The ability to select materials from CAD Design Software s Materials Library allows the user to setup custom technology parameters to begin a ceramic design or choose one from the list of preset technology files The preset technology files have all of the DuPont recom mended minimum entity widths and spac
50. e actual measured performance data displayed But perhaps you need a custom design Not a problem Contact us for our fast response low prices and quick turnaround For your commercial industrial and military applications choose Mini Circuits VCOs oth Agilent Technologies For high reliability all Mini Circuits VCOs are tested with the Agilent E5052B Signal Source Analyzer www agilent com find ssa Detailed Performance Data amp Specs For Mini Circuits VCOs Available Online at www minicircuits com oscillat html E E m i a Get info at www HFeLink com a M l n i 5 G re u Its a al i f ISO 9001 ISO 14001 AS9100 CERTIFIED i P O Box 3501 66 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web site Pazo The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com Peon Pending IFIRF MICROWAVE COMPONENTS 402 Rev High Frequency Products 3 D EM SIMULATOR 3 D EM Simulator is Integrated with ADS to Lower the Cost of Design By How Siang Yap amp Hee Soo Lee Agilent EEsof EDA ull 3 D electromag Re EM simula tion used to be an analysis tool for EM experts tackling the toughest antenna or pas sive component design problems Today however consumer wireless tech nology trends are pushing high frequency and high speed circuits packages modules and antennas
51. e their test signals Many ongoing operational test and monitoring functions also send the acquired signal samples to the monitoring equipment via cables Whenever possible it is best to use manu factured cable assemblies They are built under controlled conditions by experienced technicians often using special fixtures for maximum precision and repeatability Of course many cables need to be measured on site with connectors installed in the field In these situations the experience of the installer along with the available tools and fixtures will determine the performance of the final assembly Selecting the Cable and Connectors Now that we have firmly established the widespread use of cable assemblies a review of the basic information necessary to specify them is in order The first step is to choose the 54 High Frequency Electronics right cable connector combination to meet your needs This is far more detailed than many new engineers expect The following list is adapted from the user input form on the Semflex Web site and shows the range of selec tion criteria for cable assemblies Application Data Cabinet interconnects Y N Cable Type flexible semi rigid hand formable Low Intermodulation Y N Outdoor Field Uses Y N Chemical Resistance Conditions Y N Cable Jackets and Outer Covers Y N Cable diameter 0 120 to 0 500 Jackets FEP Polyurethane Armor Ruggedized Nomex Electrical Specifications
52. e 2 year guarantee AMPLIFIER DESIGNER S KITS K3 Gali_GVA Only 99 95 Contains 10 Ea of Gali pu 244 744 844 GVA km 84 40 pieces total K4 Gali Only 99 95 Contains 10 Ea of Gali 1 2 34 4 5 64 21 33 51 90 pieces total K5 Gali Only 64 95 Contains 10 Ea of Gali 4F 5F 6F 51F 55 50 pieces total Evaluation Boards Available 59 95 ea All models protected under U S patent 6 943 629 re RoHS compliant i C Mini Circuits minieirguits com Get info at www HFeLink com ISO 9001 ISO 14001 CERTIFIED i P O Box 350166 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web site gt TM 4 2 The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com Pater Penang RF IF MICROWAVE COMPONENTS 346 rev N High Frequency Design LINEARIZATION METHODS Linearity Improvement Techniques for Wireless Transmitters Part 2 By Andrei Grebennikov Bell Labs Ireland Reflect Forward Linearization Amplifier The reflect forward adaptive linearizer RFAL technique uses the input reflected signal from one power amplifier to develop an intermodu modulation components The input reflected composite signal containing the fundamental and intermodulation components is used as a correcting signal for the lower power amplifi er This correcting signal
53. e common as systems have increased in complexity espe cially wireless base station equip ment installed in unmanned loca tions Phase stability over tempera ture assures performance over a wide enough range that precision air con ditioning is not required Figure 1 is a comparison by IW Microwave of standard semi rigid cable with a Figure plot comparing standard 0 25 inch semi rigid line with IW s 1801 phase stabilized cable Phase vs temperature phase stabilized cable Another high performance appli cation is space qualified operation There are 50 or more applicable stan dards for space applications devel oped by government military com mercial and industry organizations Many of the necessary specifica tions are the same as any other cable assembly but there are also many additional factors According to W L Gore s extensive catalog of space flight cable assemblies these include such things as outgassing in a vacu um environment a temperature range of 55 to 150 C ability to withstand launch shock and vibra tion and a series of high reliability practices including X ray inspection Field Built Assemblies Wireless personal communica tions base stations make up the sin gle largest consumer group for coaxi al cable While the base station equipment may use manufactured cable assemblies for its installation the use of multiple antennas located at the top of towers requires that
54. e systems includes a wide range of flexible microwave cable assemblies Extremely low loss cables are optimized for operation up to 11 GHz 18 GHz 26 5 GHz 40 GHz 50 GHz and 65 GHz These cables are available with optional internal and external ruggedization and a selection of jacket materials to meet specific environmental requirements W supports these cables with a wide selection ts a H L N ad of connectors including SMA TNC N SC w y md LNY Emm 3 5mm and 7mm IW s SERVICE is second to none Most s quotes are provided within 24 hours Additionally your calls are handled personally not through voice mail ISO 9001 2000 CERTIFIED Get info at www HFeLink com acom High Frequency Design 3G SPECIFICATIONS T a G i 9 E 5 Ca a EL n E a oO 200 1 92 193 1 94 1 95 1 96 1 97 1 98 1 99 200 2 01 freq GHz Figure 4 Two fone simulation Figure 5 cross modulation products are observed around the single tone at 1 99 GHz For mathematical analysis we could assume that the signal at the LNA input comprises of two interferers besides the wanted signal namely a CW blocker signal and the TX leakage signal Note that the TX leakage sig nal is amplitude modulated while the blocker is not mod ulated in this analysis Assuming the input signal x t with blocker and TX leakage signal then we get x t A cos t A 1 m Z cos 2 where m t is the amplitude
55. echetnerSersdeusazccodaiedecianceeiidascosceeiaiecaataderese 25 Besser Associates xcecsdictscvnsdevedeeyiivasdtcanisedacdeienseevncdaeaeeses 56 MinC TOU S ee oee n E E 33 BI A ai a E IOE E EE AE A OET ATE 9 Mini Circuits 55ces sxos easasdesnoadadanstisicniniaceaaveunaisdalatatiamaatudss 36 37 C W Swift amp Associates 2 0 0 cccccceseeccceeececeeeeeeeeeeeees Cover 2 VTi A SECU GS ap captavssescveceeenseuavancesyesscutsancesegcaveateesasecsentann 43 Delta Electronics Mfg Co ccecccccccccceeescceceeeceeeeeeceeenecees 31 DY Tail EPC IGS Sect ciacateceesheedeseceusarceedasecesianeesiieranbacecdasecdas Seicvees 45 i ed epee ener aero eee Oe tee ee eT eee ene eer een A ee 23 MiMi C ITOT ainai di e a E 55 FONG A AATA 41 Mini CIrCuUItS aensce cscncectescceansecenysaceeusaeceusiacceaieedouavedsnsecatanensen 59 Emerson Network Powe r c ccccccsseccceseceeceeeseceeseceeeeeeees 4 DIETE vo ereca ecucieasionesatteeesusuease E E 1 IW Microw ay vicaasisvecsxissasaeavaccsdceasseasvenaiecssactectiedecannsincegeeanads 21 MEPE G cicsrcisaaauatcesetsepuvanse deaueuensouecnosernteuseuceiaoes sae eeancase Cover 4 J micro Technology soccssaticveccsousictidvineioecatecacdenesansieeesanieeesecexes 41 Sage Laboratories Tru Corporation ccccccsseeeeeees 28 29 J MICO PECMNOIO PY o sacasecsxaceecasaieesniveeetereeSstareeetereetatatieewiasees 61 By SMI E aE A EEE ENA 15 Linear Technology sees cc sonaxsetenscaceesstesnossadsessvisgeciedieus texeaeiex
56. echnol vol VT 34 pp 169 177 Nov 1985 28 R C Tupynamba and E Camargo MESFET Nonlinearities Applied to Predistortion Linearizer Design 1992 IEEE MTT S Int Microwave Symp Dig pp 955 958 29 H S Read Electric Circuits U S Patent 1 464 111 Aug 1923 30 Y Ikeda K Mori S Shinjo F Kitabayashi A Ohta T Takagi and O Ishida An L Band High Efficiency and Low Distortion Multi Stage Amplifier Using Self Phase Distortion Compensation Tech nique IEICE Trans Electron vol E85 C pp 1967 1972 Dec 2002 31 K Yamauchi K Mori M Nakayama Y Itoh Y Mitsui and O Ishida A Novel Series Diode Linearizer for Mobile Radio Power Amplifiers 1996 IEEE MTT S Int Microwave Symp Dig vol 2 pp 831 834 32 K Yamauchi K Mori M Nakayama Y Mitsui and T Takagi A Microwave Miniaturized Linearizer Using a Parallel Diode with a Bias Feed Resistance JEEE Trans Microwave Theory Tech vol MTT 45 pp 2431 2435 Dec 1997 33 M Nakayama K Mori K Yamauchi Y Itoh and Y Mitsui An Amplitude and Phase Linearizing Technique for Linear Power Amplifiers Microwave J vol 39 pp 96 104 Mar 1996 34 S Ogura K Seino T Ono A Kamikokura and H Hirose Development of a Compact Broadband FET Linearizer for Satellite Use 1997 IEEE MTT S Int Microw Symp Dig vol 3 pp 1195 1198 35 J Boix Ku Band Solid State Power Amplifiers for the New Europea
57. ed at the commercial wireless and defense aerospace industries He can be reached by email at how slang_yap agilent com HeeSoo LEE is 3D EM Electro Magnetic simulation technical lead at Agilent Technologies EEsof EDA In his 20 year career he has worked for RF microwave EDA companies including Agilent EEsof Cadence and Hewlett Packard For product information contact Agilent Technologies Inc Agilent EEsof EDA www agilent com find eesof empro DC to 8 GHZ MIMIC Amplifiers amp SOT 89 Actual Size from These Tiny SOT 89 cascadable 50 ohm wideband gain blocks cover from below 10 KHz up to 8 GHZ in a single model Built to outlast the equipment it will be used in these transient protected units are ruggedly constructed and will meet level 1 moisture sensitivity testing f Check out our web site over 24 models available with performance data curves environmental specs and easy downloading of S parameters from the web to your simulation software Models are available to provide the performance you need from high gain low noise high IP3 or low DC current Don t wait choose the MMIC model that meets your performance price requirements Available from Stock Mini Circuits we re redefining what VALUE is all about e Power output to 21 dBm e High IP3 up to 38 dBm e Transient and ESD protected e Fixed voltage GVA fa 84 e Gain from 12 26 dB e Noise figure from 2 7 dB InGaP HBT
58. eel and tube through Aeroflex Metelics distri bution networks Aeroflex Metelics www aeroflex com metelics Fixed Frequency Synthesizer Z Communications Inc is pleased to announce a RoHS compliant fixed frequency synthesizer in X band The SFS11000Z LF is a sin gle frequency signal source that is pre programmed to operate at 11 000 MHz and features a self locking mechanism with lock detect This synthesizer has a typi cal phase noise of 84 dBc Hz at 10 kHz offset with a typical reference spur suppression of 70 dBc The SFS11000Z LF is designed to deliver a typical output power of 0 dBm with a VCO voltage supply of 5 Vde while drawing 90 mA typi cal and a PLL voltage of 3 Vdc while drawing 11 mA typical over the temperature range of 30 to 60 C SFS11000Z LF is well suited for broadband transmission appli cations that require low phase noise performance Z Communications Inc www zcomm com Low VSWR Multiway Coax Conneciors Sabritec announces the launch of their new high frequency Micro D Coax Connectors MDHC with low VSWR up to 40 GHz typ These connectors have a constant 50 ohm airline impedance interface and are 30 smaller than their SCX coaxial connectors The ultra miniauture MDHC contacts are compact in size allowing multiple high density con nections in a Micro D style shell for applications where tight space and weight savings are critical MDHC Connectors are also available with
59. efficiency Switched Mode Power Amplifier for Mobile WiMax F Robert M Suarez PeAloza A Diet M Villegas G Baudoin Best Conference Poster Designing High Impedance Etched Ground GCPW D Schlieter Best Student Poster Barium Strontium Titanate BST Microwave Devices Tony Price University of South Florida Sales Appointments TT electronics IRC will represent Semelab Inc for North American sales and distribution of Semelab s com plete product offering Acquired by TT electronics in August 2008 Semelab designs packages tests and sup plies discrete semiconductors power modules RF MOSFETs and sensor products to the high reliability aerospace medical and communication markets f0r rugged signal integrity e Edge Rate contact system on 8mm pitch is robust when zippered during unmating e Rated at 9 5 GHz in differential pairs f e High speed cable assemblies flex data links and RF cable solutions e Right angle and edge mount designs ideal for Micro Backplane applications git camie LINE SOLUTIONS www samtec com tls Get info at www HFeLink com High Frequency Design 3G SPECIFICATIONS IP2 and IP3 Nonlinearity Specifications for 3G WCDMA Receivers By Chris W Liu and Morten Damgaard Broadcom Corporation po Test Conditions a ee aer po S104 Here is a thorough summary of linearity requirements for WCDMA receivers with special attention to the way they apply fo
60. electronics com Advertising and media information is available online at www highfrequencyelectronics com June 2009 63 DESIGN NOTES Feedback and Comments on Where Have the Spaces Gone We received many reader comments about last issue s column on the proper format for numbers and units Here are excerpts from some of your e mails along with follow up notes of our own Editor Thank you for your design note on spaces I have fallen victim to leaving out the spaces But I checked the official SI standard once again and I find that paragraph 5 3 3 specifies that spaces are to be used http www bipm org utils common pdf si_brochure_8_en pdf Thank you for the fine magazine Steven Swift Novatech Instruments Inc Editor Ref High Frequency Electronics Design Notes May 2009 Two online manuals I find quite helpful in technical writing are U S Government Printing Office Style Manual http www gpoaccess gov stylemanual browse html IEEE Standards Style Manual http standards ieee org guides style Dave Bowker Fort Kent ME Editor Your Editorial Design Notes on Where Have the Spaces Gone resonated with me as an aesthete when it comes to the written word Your specific question of when did the practice of removing spaces between numbers and units become common practice speculat ed that there was some reason for the change but you could not find it Let me offer a possibility based on my own
61. ent of the output is V a V q A cos w t cos t 2cos 0 t cos 0 t a A 5 08 20 5 008 20 cos cos 0 It shows that the second order IM2 products are cre ated at three frequencies DC f1 f2 and f1 f2 In terms of power level IM2 products are distributed against total IM2 power as e 50 3 dB at DC e 25 6 dB at fl f2 e 25 6 dB at fl f2 The IM2 of low frequency is considered only in this paper since it is the one falling into band The power level of the IM2 product at f1 f2 is 25 of the total IM2 power which is 6 dB below the total IM2 power So the power level of IM2 at low frequency f2 f1 can be expressed as P dBm 2 P IIP2 6 dB 1 IIP2 With WCDMA TX Uplink Leakage If the signal is AM modulated such as TX leakage sig nal the 2 tone formula above can not be fully applied The difference between the formula and 2 tone signal is called correction factor 4 The following section derives the cor 18 High Frequency Electronics Tx power 20 dB Table E Narrow band blocking NBB Tx power 20 dBm 15 Table F In band blocking IBB rection factor fora WCDMA signal using ADS simulation Fig 1 The two tone test case and the case of single tone plus WCDMA uplink signal test case are simulated The coef ficients of the second order product in the model is set to 0 1 for simplicity since only
62. er module with a digital adaptive predistortion developed for CDMA handset application in a frequency range of 887 925 MHz 56 The block diagram of the power amplifier module includes additionally a SAW fil ter a phase controlling block and a CMOS integrated cir cuit incorporating two look up tables to linearize AM AM and AM PM characteristics The variable gain amplifier is based on a dual gate MOSFET to linearize AM AM characteristic which can easily vary the power gain by controlling its second gate bias voltage in a range of more than 10 dB In the phase controlling block a varactor diode was used with the phase range of more than 10 By producing appropriate AM PM predistortion data includ ing phase characteristics of the dual gate MOSFET and the following PA block the total AM PM can be lin earized Because the variations of phase with supply volt age and temperature according to the measurement results were insignificant it was enough to use the lookup table with modified initial data to minimize phase varia tions versus input power that were predictable in advance To linearize AM AM characteristic the adaptive predistortion was used by modifying the data in look up table during linearization process It was found that the allowable time delay must be less than 40 ns for CDMA signal As a result by using a digital adaptive predistor tion mechanism for only AM AM characteristic the PAE was increased up to 48 for the ou
63. er test cases the output power at the antenna connector is defined as 20 dBm according 3GPP specifications The output power of the PA can be calculated by add loss between the PA output and the antenna connector PA a FE DUP y5 out loss where FE is the front end loss including switch PCB traces and matching loss Dup 1s the duplexer TX insertion loss The RFIC output power can be calculated based on PA and the PA gain It is around 0 5 dBm P 0 5 dBm in this case The noise present in the RX band at the LNA input due to PA phase noise is rfic Fence PA noise ISO 10 Log BW 118 15 dBm where ISO _ is duplexer isolation from TX to RX at RX band and channel bandwidth BW 3 84 MHz And the TX noise at RX band due to RFIC is p tx rx Pain 10 Log BW ISO rfic noise n_rfic 120 15 dBm Since the total noise due to TX transmitter is the summation of both it becomes PAtx_noise 10log 10 10 10 Pr fic_noise 10 P tx_noise 114 86 dBm TIX Leakage Reciprocal Mixing The TX leakage power at the RFIC input is Paias Pat a ISO 25 6 dBm Assuming the phase noise of the RX LO at the TX fre 24 High Frequency Electronics p p e on _ Rx Noise dBm Hz a E E a p r i E E Table 1 PA noise and gain RX TX ANT dB RX TX dB Insertion RX noise loss attenuation attenuation FA uat
64. erious user market Wireless operators are working hard to recruit casual users who are willing to pay for broadband access that is primarily used for personal entertainment There is no doubt that the future will unfold with a vast array of services that take advantage of high speed wireless communica tions And there is also no doubt that present standards used to start down that path will regularly be replaced with improved tech nologies Notes on Other Topics Last issue s Design Notes col umn on writing styles and proper presentation of numbers and units generated plenty of comments We received nearly as much feedback as the Why 50 Ohms topic of a couple years ago With so much feedback plus additional informa tion we have found we decided to follow up on this topic in this month s Design Notes column The economic downturn seems to have created extra time for engi neers to do some writing Over the past few months we have seen an increase in article proposals par ticularly those with significant depth and substance In this issue Dr Grebennikov s article on lin earization and the review of 3G nonlinearity specs by engineers at Broadcom are good examples You can look forward to reading future articles on locating antennas within enclosures receiver architec ture planning low voltage power amplifiers software defined radio and an interesting examination of the combined analytical in
65. ers of Semiconductor Devices Packages and Assemblies with NIST traceability Benchtop Size lt 1ft Vacuum chuck X Y stages X Y Z probe positioners Top Plate Z lift Vacuum Accessory Manifold 6 5X 112 5X Stereo Zoom Microscope Adjustable Halogen Illuminator Vacuum Accessories Compatible with 40GHz probes e Accessories for Thermal Chucks and Probe Cards Compatible with Magnetic Mount Positioners e Test wafers microstrip packages and surface mount components J microTechnology A 3744 NW Bluegrass PI T ae Portland OR 97229 503 614 9509 Bites Technology 503 531 9325 FAX www jmicrotechnology com A Probe Station On Every Bench Get info at www HFeLink com Supplier Companies Get your share of attention with our New Product coverage Send us your new product press releases via e mail editor highfrequencyelectronics com June 2009 61 NEW PRODUCT customization phase of an antenna design quickly and reliably Antenna Magus will be available immediate ly through all vendors of CST MICROWAVE STUDIO and FEKO Computer Simulation Technology www cst com more features New features in Release 12 will help high frequen cy design engineers explore manu facturing tolerance impacts on designs Sonnet Lite can also be used from within the AWR Microwave Office or Agilent ADS environments ii Notch Filter for TV Broadcast Applications Sonnet Software www
66. es 13 SGMC Cr Ae scorers aie 23 M A COM Technology Solutions cceccceeeeeeees Cover 3 Teledyne COUG aM vicccsatiescavzeisoasinedendarssassacicesasecsyavesdesadaciueeanieds 1 Micro Lambda Wireless cicccs scssceseiicasssavasseseeedassveseavexesessess 17 Teledyne Storm Products oseennseeesssenssseessseersseersssesss 11 E FIND Our ADVERTISERS WEB SITES usine HFELINK 1 Go to our company information Web site www HFeLink com from www highfrequencyelectronics com just click on the HFeLink reminder on home page 2 Companies in our current issue are listed or you can choose one of our recent issues 3 Find the company you want to know more about and just click 4 The Web site of each company you choose will open in a new browser window HM Or YOU CAN BROWSE THROUGH OuR ONLINE EDITION AND SIMPLY CLICK ON THEIR Ab ME ADVERTISERS REACH OUR ACTIVE AND INTERESTED READERSHIP Contact one of our advertising professionals today ADVERTISING SALES EAST COAST ADVERTISING SALES WEST Gary Rhodes Tim Burkhard Tel 631 274 9530 Tel 707 544 9977 Fax 631 667 2871 Fax 707 544 9375 E mail grhodes highfrequencyelectronics com E mail tim highfrequencyelectronics com ADVERTISING SALES CENTRAL PUBLISHER OTHER REGIONS amp INTERNATIONAL Keith Neighbour Scott Spencer Tel 773 275 4020 Tel 603 472 8261 Fax 773 275 3438 Fax 603 471 0716 E mail keith highfrequencyelectronics com E mail scott highfrequency
67. es for broadband communications Even when a single standard is mandated the chosen standards are dif ferent from one wireless market to another Fortunately the issue of multiple standards plus variants is also being addressed by the handset and mobile appliance makers with soft ware adaptable radio and baseband technologies that allow one handset PDA or other device to handle multiple standards These flexible devices may even allow updates and reconfiguration of networks in the future making the choice of transmission technology almost irrelevant Weaknesses can be addressed by changing the modulation or data format on the fly without the user even knowing about it Such a universal de E phone would also reduce the num ber of different models saving costs and lowering prices The Broadband Market Sometimes I wonder how much real demand there is for broadband services and how much of the demand is really a push from the system operators and mobile device makers the wireless version of super sizing that fast food meal I ve decided that the present status is definitely a push from the providers Sure there is significant demand for high speed Internet with the convenience of cell phone style portability but that demand is probably not sufficient to pay back the cost of initial deployment of such a major system upgrade Thus it is a business necessity to develop a consumer market in addition to a s
68. ey Technologies Inc has intro duced its customizable line of satellite and space qualified crys tal oscillators spanning oven con trolled crystal oscillators OCXQOs temperature compensated crystal oscillators TCXOs voltage con trolled crystal oscillators VCXOQOs and crystal oscillators XOs Bliley s satellite and space quali fied crystal oscillators incorporate Z swept technology meeting the requirements of MIL PRF 3098 With frequency ranges from 10 to 130 MHz and based on proven designs supplied to military and space customers Bliley is now manufacturing these devices for multiple customer programs Key product features include optimized phase noise performance and excellent frequency versus temper ature stability Bliley Technologies Inc www bliley com Avionics Test Set Aeroflex announced its IFF 45TS avionics test set has received offi cial certification from the U S Department of Defense DoD International AIMS Program Office The IFF 45TS test set is now AIMS certified to perform testing and validation on identifi cation friend or foe IFF Mode 4 and 5 transponders and interroga tors In addition the IFF 45TS will perform testing on DME TACAN interrogators The IFF 45TS test set is an RF signal simulator that California Eastern Laboratories www cel com can be remotely operated It sup ports engineering development of Mode 5 or Mark XIIA systems in Network Time Server bench and
69. f the front end switch module are P 110 dBm 110 dBm sw_im2 7 sw_im3 7 With the OOB test case not all blocker frequencies produce distortion that falls into wanted band For the second order nonlinearity we will consider 7 Eg H F 7 Hoe tx He Piy For the third order nonlinearity we will consider e F F AF 2 eh Fx 2 AF e Fy 2 F Frx F AF 2 where Fw is the blocker frequency F is the RX channel frequency F is the TX frequency related to F and AF is the frequency separation between F and F F rx F tx The CW blocking signal is at very low frequency which is the separation between RX and TX frequencies u N p t B AV valli i ue i ED LC The second order IM2 results in mixing of F x Fa Be As the CW blocker level is 15 dBm and the duplexer attenuation at the CW blocker frequency is around 30 dB for Band I we get P 45 dBm at the input of the RFIC and the TX leakage power level P 29 6 dBm Using equation 4 with P 16 dB below N which is 3 dB above noise floor of 104 2 dBm IIP2 is calculated as IIP2 Pow Pry Pime 38 dBm F tx F Ix In this case the OOB signal is at high frequency The mixing of Fa Fa Fa F falling in the RX band The blocker level is 15 dBm and the duplexer attenua tion at the blocker frequency is around 30 dB for Band I so that P w 45 dBm and P 29 6 dBm Us
70. for the lead free version They are available in a panelized form for easy pick and place assembly of the new device as an adapter only or as a complete turn key solution with devices mounted 3 D Packaging Initiative Rohm and Haas Electronic Materials www rohmhaas com a supplier of materials for semiconduc tor packaging has entered into a joint development agreement with IBM to develop and evaluate new mate rials for emerging packaging technologies The agree ment will focus on the evaluation of photoresists and supporting ancillaries and low temperature photodielec tric materials for IBM s 3D packaging technologies Rohm and Haas and IBM will also develop new materi als for wafer level and capillary underfill applications The joint collaboration will be performed at IBM s T J Watson Research Center in Yorktown Heights NY and at Rohm and Haas Electronic Materials Technology Center in Marlborough MA High Frequency Electronics New Leadframe Technology from DNP As manufacturers attempt to cut costs chips are becoming smaller and smaller Because there is a limit to how short bonding wires can get as chips become small er it is necessary to stretch the inner lead to reach the chip As a result demand for even finer pitches on the inner lead becomes inevitable It is believed that the existing minimum lead bonding pitch is 0 17 mm If chips become any smaller it is feared that it will become diffi cult to c
71. forward S Band MIC Amplifier System JEEE J Solid State Circuits vol SC 11 pp 271 278 Apr 1976 8 R J Wilkinson and P B Kenington Specification of Error Amplifiers for Use in Feedforward Transmitters IEE Proc G vol 139 pp 447 480 Aug 1992 9 S G Kang and I K Lee Cancellation Performance of a Linearisation Loop of a Feedforward Amplifier Electronics Lett vol 33 pp 444 446 March 1997 10 K Konstantinou and D K Paul Analysis and Design of Broadband High Efficiency Feedforward Amplifiers 1996 IEEE MTT S Int Microwave Symp Dig vol 2 pp 867 870 11 P B Kenington Efficiency of Feedforward Amplifiers IEEE Proc G vol 139 pp 591 593 Oct 1992 12 P B Kenington High Linearity RF Amplifier Design Boston Artech House 2000 13 E E Eid F M Ghannouchi and F Beauregard Optimal Feedforward Linearization System Design Microwave J vol 38 pp 78 86 Nov 1995 14 H Choi Y Jeong J S Kenney and C D Kim Cross Cancellation Technique Employing an Error Amplifier IEEE Microwave and Wireless Comp Lett vol 18 pp 488 490 July 2008 15 R M Bauman Adaptive Feed Forward System U S Patent 4 389 618 June 1983 16 B Shi W Shan and L Sundstrom An Analog Adaptive Feedforward Amplifier Linearizer Proc 34th European Microwave Conf pp 1065 1068 2004 17 S J Grant J K Cavers and P A Goud A DSP Contr
72. gilent Technologies Inc www agilent com from a 28 Vdc input voltage Aethercomm Inc www adethercomm com Analog Devices Inc ADI intro duced a new highly integrated modulator for broadband satellite New Family of LNAs Skyworks Solutions Inc intro duced a new suite of low noise amplifiers LNAs featuring pHEMT and SiGe technologies The new high performing low cost product family serves various industry applications including GPS infrastructure such as GSM WCDMA and LTE base station transceivers ISM band and satel lite radio and WLAN markets The SKY65050 372LF transistor the first released product in this fami ly is a high performance low noise n channel depletion mode pHEMT fabricated from Skyworks Filter Product Line Achieving co site interference pro tection in environments of multiple VHF UHF tactical transceivers is now a reality through Pole Zero s introduction of the Mega Pole high power 50 watts electronically tunable filter product line When placed between the antenna and transceiver the Mega Pole yields excellent selectivity with minimal insertion loss even in frequency hopping modes of operation communications applications ADTs new ADRF6750 modulator offers the highest level of integra tion and functionality by combin ing four devices into one small foot print Operating within the 950 to 1575 MHz frequency range and on a single 5 volt power supply the ADRF67
73. h dielectric brick structures cannot be accurately solved by planar 3 D EM simulators which assume infinite dielectric lay ers and do not account for edge prox imity fringing The embedded RF components are drawn by RF circuit layout macros which would be very time consuming to reproduce in a standalone 3 D EM tool Hence FEM full 3 D EM simulation integrated within the circuit design flow is the ideal solution for these applications Figure 3 SATA connector modeling in EmPro High Speed High Frequency Connectors High speed and high frequency interconnects are now an integral part of the digital interface designs for PCs peripherals and portable computing devices such as netbooks and smart phones The following example Figure 3 shows the Serial Advanced Technology Attachment SATA Connector in disk drives that potentially has to support 6 Gbits s data throughput The S parameter models of the SATA connector family are developed in EMPro and can be cross verified with the included FEM and FDTD simulators to give design ers double confidence in 3 D EM sim ulation accuracy The models are con tained in an ADS design kit that can be distributed and installed into ADS A compact full featured modestly priced manually operated probe station developed for engineers and scientists Measure Microwave RF and DC parameters of Semiconductor Devices Packages and Assemblies with NIST traceability e Benchtop Size
74. h stages of a two stage power amplifier with similar signals at their inputs the even harmonics gener ated by the first amplification are neutralized by the even harmonics generated by the second amplification because they are similar in amplitude and opposite in phase at the output of the second vacuum tube 29 Indeed as it turned out with regard to modern transistor power amplifiers using GaAs pHEMT devices it is enough to choose a prop er bias point for a driver stage device in a two stage ampli fier to provide a negative phase deviation to compensate for the positive phase deviation of the final stage 80 In this case the quiescent current of the driver stage device whose size is three times smaller than that of a final stage device is sufficiently small As a result for a quiescent cur rent equal to 1 25 of the device DC saturated current an improvement of more than 5 dB in ACLR of a whole high efficiency two stage cellular phone WCDMA power ampli fier operating at 1 95 GHz can be achieved at backoff out 46 High Frequency Electronics Attenuator Gain Phase Figure 7 Block diagram of power amplifier with pre distortion linearizer Input Lo Output o Input Output Figure 8 Simple diode based predistortion linearizers put powers close to the saturation power Figure 8 a shows the schematic of a simple diode lin earizer composed of a series Schottky diode and a paral lel capacitor
75. he feedback complexity can be reduced with special adapta tion algorithm when a single mixer and ADC are used in the feedback path instead of the full quadrature demodu lation 40 In addition a non iterative adaptation method can be used to eliminate the convergence constrains usual for iterative methods 41 Feedback Linearization The principle of feedback linearization of the power amplifier at the carrier frequency was invented by Harold S Black in 1927 A year later he filed the patent applica tion on a vacuum tube feedback amplifier 42 Black rec ognized that by using a large amount of feedback in an amplifier comprising several vacuum tube stages in cas cade to yield a very high open loop gain gives a glorious opportunity to make a negative feedback amplifier having increased bandwidth and which is insensitive to nonlin earity and uncertainty in the characteristics of the vacu um tube 43 The gain of the negative feedback amplifier decreases by amount of the feedback or loop gain so do the nonlinear components In this case the negative feed back amplifier becomes insensitive to the gain or phase variations as long as its stability conditions are satisfied In the latter case if each of three tuned circuits of a three stage vacuum tube RF feedback amplifier can be assumed to have the phase gain characteristics of the interstage circuits very nearly to infinite Q tuned cir cuits the maximum amount of feedback will al
76. hether you are designing next generation LTE Long Term Evolution cellular or WiMAX broadband wireless the LT 5538 extends system performance Its unparalleled accuracy and dynamic range minimizes equipment calibration requirements resulting in stable system performance and reduced operating costs W Outstanding RF Detector Family W Info amp Free Samples www linear com 5538 1 800 4 LINEAR Product Part Dynamic Category Number Range LT5534 60dB 50MHz to 3GHz 7mA 3V 2mm x 2mm SC 70 Frequency Range Power Package Log Detector LT5537 83dB LF to 1GHz 13 5mA 3V 3mm x 2mm DFN LT5538 40MHz to 3 8GHz 29mA 3V 3mm x 3mm DFN LT5570 40MHz to 2 7GHz 26 5mA 5V 3mm x 3mm DFN RMS Detector LT5581 10MHz to 6GHz 1 4mA 3 3V 3mm x 2mm DFN LTC 5505 0 3GHz to 3GHz 0 5mA 3 3V SOT 23 Schottky Peak LTC5532 0 3GHz to 12GHz 0 5mA 3 3V TSOT 23 LY LTC LT LTM and Burst Mode are registered trademarks of 2mm x 2mm DFN Linear Technology Corporation All other trademarks are the prop erty of their respective owners within automotive collision avoidance security airport imaging applications and within personal area networks particularly within WirelessHD The global base transmitting station BTS transceiver TRx market grew by 20 5 in units in 2008 according to the latest report from EJL Wireless Research titled Global BTS Transceiver Market Analysis and Forecast 5thEdition 2008 2013
77. hieved at the output power Pigg 27 dBm and operating frequency of 1 85 GHz However the critical problems of this analog feedback predistortion scheme are the bandwidth limitation caused by the loop delay and an oscillation tendency caused by the feedback nature By employing a digital lookup table LUT tech nique these limitations can be overcome while maintain ing the advantages of the feedback circuit 54 As a result the distortion is corrected in a digital domain and further enhanced by the feedback linearization In this case the structure of a digital feedback linearizer is the same as the analog feedback counterpart except that the feedback signal in the cancellation loop constructs a LUT in the digital domain and the gain factors of the signal canceling and feedback paths are adjusted by the DSP instead of using the variable attenuators and phase shifters The predistortion signal is extracted directly from the LUT which has been updated using the error signal extracted at the signal cancellation loop before hand Thus the time delay through the loop is eliminat ed and the bandwidth limitation does not exist anymore At the same time the oscillation tendency of the feedback Variable gain amplifier rain control Phase control Digital CMOS IC Figure 17 Block diagrams of power amplifier with adaptive predistortion circuit can be suppressed easily by digital control of the feedback loop parameters Compared
78. ice nonlinearity are in phase relative to the output inter Forward 44 High Frequency Electronics Figure 6 tion amplifier when it is combined with the input signal flowing through the forward path The booster amplifier in a lower path is necessary to equalize the drive signal levels for both upper and lower power amplifiers In this case the signals from the upper and lower amplifying paths have the in phase fundamental and out of phase intermodulation components at the corresponding inputs of the output in phase combiner thus resulting in a distortion can cellation in the combined signal flowing into the load The LDMOS RFAL amplifier with output power of 43 dBm achieves an improve ment of the third order intermodulation prod ucts by over 15 dB and a total efficiency of more than 20 over the frequency range from Output combiner gt Reflected Booster Block schematic of reflect forward lineariza riny TOUGHEST MIXERS UNDER THE SUN 95 Rugged tiny ceramic SIM mixers from T ea qty 1000 offer unprecedented wide band high frequency performance while maintaining low conversion loss high isolation and high IP3 Over 21 models IN STOCK are available to operate from an LO level of your choice 7 10 13 and 17 dBm So regardless of the specific frequency band of your applications narrow or wide band there is a tiny SIM RoHS compliant mixer to select from 100 kHz to 20 GHz Built to operate
79. iciency dual stage depressed collector 1 25 kW peak power TWT to provide 450 W of linear power at the flange over the full 13 75 to 14 5 GHz uplink frequency band Xicom Technology Inc www xicomtech com Wireless Test Free CD on MIMO Agilent Technologies is at the fore front of emerging markets such as MIMO Multiple Input Multiple Output A challenging antenna technology MIMO ultimately will improve spectral efficiency bit sec Hz signal quality and cell coverage This CD contains infor mation on this evolving standard uncovering the hidden roadblocks with a new suite of measurements Expert engineers in test and mea surement demonstrate how to make the new measurements easi er for you to analyze and trou bleshoot your system The free CD is Agilent s latest addition in an archive of popular MIMO Web casts and is available now online Agilent Technologies Inc www agilent com find mimo forward LTE Test Solutions Aeroflex announced it is on track to become the a complete global supplier of LTE test equipment by bringing to market solutions cover ing all aspects of LTE test Aeroflex has demonstrated its ability to deliver early solutions for the i E W design development and deploy ment of both LTE terminals and network infrastructure with the Aeroflex 7100 and TM500 respec tively Aeroflex has also LTE enabled its 3000 Series PXI based and 3410 digital RF signal genera t
80. ifications and free evaluation samples visit www coilcraft com sq www coilcraft com 800 322 2645 Get info at www HFeLink com August 19 21 2009 San Jose CA WiMAX Broadband Wireless Access August 19 21 2009 San Jose CA Semiconductor Device Physics for RF Design August 19 21 2009 San Jose CA RF Measurements Principles amp Demonstration August 24 28 2009 San Jose CA CST Computer Simulation Technology AG Bad Nauheimer Str 19 D 64289 Darmstadt Germany Tel 49 6151 7303 0 Fax 49 6151 7303 100 E mail info cst com http www cst com CST 2009 Innovations Workshop Series CST 2009 Innovations Workshop Microwaves and Antennas June 22 2009 Madrid Spain CST 2009 Innovations Workshop Wireless Applications June 24 2009 EEEfCOM 2009 Ulm Germany CST 2009 Innovations Workshop July 2 2009 Queen Mary University London UK Georgia Institute of Technology Distance Learning and Professional Education PO Box 93686 Atlanta GA 30377 0686 Tel 404 385 3500 Fax 404 894 8925 http www defense gatech edu courses Basic Concepts of RF Printed Circuits July 21 23 2009 Las Vegas NV Developing Radio Frequency RF Prototype Hardware July 21 23 2009 Atlanta GA EMC EMI for Engineers and Engineering Managers August 17 21 2009 Las Vegas NV Antenna Engineering September 14 18 2009 Boulder CO Basic Antenna Concepts September 15 17 2009 Orlando FL Phased Array Antennas and Adaptive Techniques
81. ing equa tion 3 wath P o 16 dB below N we have im2 IIP2 Pow Pry Pry 38 dBm AF 2 The blocker power level actually varies depending on frequency offset according the 3GPP requirements When F w is between 2050 MHz and 2075 MHz the blocker level is 44 dBm As the duplexer attenuation at pers tae 4 a THE GOST RY LARGEST SELECT ION OF RF CUSTOM a a very large MICROWAVE COMPANY Get info at www HFeLink com 3G SPECIFICATIONS blocker frequency is around 5 dB P is 49 dBm ITP3 is calculated as IIP3 0 5 2 Pow Pry Pins 7 dBm When Fw is located between 2025 to 2050 MHz the blocker power level is 30 dBm Assuming duplexer atten uation at blocker frequency is 15 dB P w is 45 dBm IIP3 is calculated as IIP3 0 5 2 Pow Pry Pim 3 dBm When F w is between 2015 and 2015 MHz the blocker power level is 15 dBm With the duplexer attenuation at the blocker frequency of 30 dB P is 45 dBm IIP3 is calculated as IIP3 0 5 2 Pow Pry Pim 3 dBm F 2 AF The CW blocker frequency is located between 1730 and 1780 MHz To allow P 117 dBm which is 16 dB below the maximum allowed noise floor N the blocker power level is 15 dBm Assuming duplexer attenuation at the blocker frequency is 38 dB P w is 54 dBm IIP3 is Possibilities This is what we see calculated as IIP3 0 5 Pay 2Pry Ping 1 dBm F 2 F FY When the
82. ings incorpo rated for efficient design and manufacturing flow CAD Design Software has incorporated many CAM tools for the ease of processing a ceramic design such as nibbler data for removing cavity material in bulk or in steps and control of the Gerber hole and punch data for correct out put to manufacturing DuPont Microcircuit Materials has over 40 years of experience in the development manufacture sale and support of specialized thick film compositions Fine Pitch Bump Adapters for Alternate ICs Aries Electronics www arieselec com has launched a new series of adapters that enable the use of virtually any SMT IC device on a pitch of 0 4 mm or higher on PC boards with 0 5 mm pitch These are ideally suited to adapting an IC device to some of the more popular TSSOP and QFP packages on 0 5 mm pitch This adapter will enable the user to solder a BGA or other SMT device to pads on the component side of the adapter which will then connect through the adapter to the 0 5 mm pitch raised connection pads up to 0 010 on the bottom The connection scheme comes standard in a pin 1 to pin 1 routing but can easily be customized to accommodate virtually any connection requirement The Aries Fine Pitch Bump Adapter boards are fabri cated from 0 032 thick FR4 or Rogers 370 HR with 1 2 oz copper traces on both sides The NSMD pads are fin ished with ENIG The adapters operate at up to 221 F 105 C for FR4 versions and 226 F 130 C
83. ion Table 2 a Rx Noise dBe H1z A65 s i i isiSOY Duplexer performance E E ee j o Table 3 RFIC phase noise at RX band quency is 157 dBc Hz then the reciprocal mixing at the RX band is tx_reciprocal 116 75 dBm IX Leakage IIP2 First let s make an assumption that the allowed sen sitivity degradation as X dB and then we will have PAtx_noise i PAtx_im2 f Nt max i Ptx_reciprocal o 10 10 10 10 Ntmax X 10 Arranging the equation above and expressing the above equation in dB we get PAtx_noise Ptx_im2 Ptx_reciprocal 10 10 10 log 1o 1 10 N tmax X 10log rofa0 5 1 The term X 10 log 10 10 1 is the factor that determines how much the impairments shall be below Nmax For example if X 0 3 dB meaning 0 3 dB sensitivity degradation is allowed the total impairment power level must be 11 4 dB below the maxi e Very Wide Band 2 2500 MHz e Very High Isolation up to 52 dB e Very High 1 dB Compression up to 23 dBm e Very Low Conversion Loss from 6 3 dB It s an industry pE from Mini Circuits Mini Circuits shielded RoHS LAVI frequency mixers deliver the breakthrough combination of very high IP3 up to 36 dBm ultra wideband operation and outstanding electrical performance TYPICAL SPECIFICATIONS Model No LAVI 9VH LAVI 10VH LAVI 17VH LAVI 22VH LAVI 2VH LAVI 25VH Frequency MHz LO 820 870 300 1000
84. itional page should contain the paper title author s affiliation name of the correspondence author his her address phone fax numbers and e mail address On the same page you should clearly summarize the novelty of your contribu tion and indicate the desired technical areas maximum of two The submission must be in electronic format PDF A Word template is available on the symposium Web site http www apmc2009 org No hardcopy sub mission will be accepted All accepted papers will be included in IEEE Xplore and indexed by EI IEEE International Solid State Circuits Conference San Francisco CA Conference Dates February 7 11 2010 Paper Submission Deadline September 14 2009 Topics Innovative and original papers are solicited in subject areas including but not limited to the following ana log data converters high performance digital imagers MEMS medical amp display low power digital memory RF technology directions wireless and wireline Companion papers for large chips ones that require two paper slots to discuss both architecture and circuit details are encouraged identify companion papers during the submission Information To submit a paper go to http www isscc org on the Web and complete the requested information The submission Web site will be available starting July 1 2009 You may consult the Web site for instructions at any time after this date Authors are encouraged to complete the questio
85. itude to ampli tude modulation AM AM and amplitude to phase modu lation AM PM response extracted from the S parameter measurements by a vector network analyzer VNA 88 The amplitude and phase characteristics are interpolated using splines which are continuous piecewise cubic func tions with continuous first and second derivatives The interpolated amplitude and phase characteristics are then used to compute the appropriate predistortion coefficients representing a lookup table which are multiplied with the original IS 95 signal to generate the desired predistorted baseband signal The results show the limitations of this technique when the LDMOSFET power amplifier opera tion conditions are close to saturation only a little more than 6 dB improvement in ACPR can be achieved Generally an adaptive correction mechanism is required to maintain the performance over varying load supply voltage or temperature conditions This means that the lookup table needs to be updated continuously to keep dif ferences between the source signal and the transmitted signal sufficiently small This can be realized by downcon verting the portion of the transmitted signal and compar ing it with source signal In this case it is important to provide the optimization of the wordlengths required in different parts of the predistortion linearizer to reduce power consumption and increase bandwidth for the required adjacent channel interference level 39 T
86. locking post mechanisms or blind mate hardware attachment Insert arrangements are available in 2 4 6 8 and 10 way coax assemblies as well as mixed signal power coax and high speed twinax for hybrid arrangements Sabritec www sabritec com New Antenna Design Product Computer Simulation Technology AG CST EM Software amp Systems S A Pty Ltd announce the release of a new software product to accel erate the antenna design and mod elling process Antenna Magus has a huge database of antennas that can be explored to find design and export models of designed antennas to CST MICROWAVE STUDIO and FEKO Its feature set is target ed at aiding engineers get to the ProbePoint CPW uStrip Adapter Substrates Precision CPW to uStrip Adapter Substrates Companion Calibration Substrates and Standardss Standard amp custom Carrierse Accurate Electrical Data to Frequencies gt 50 GHz 5 10 amp 15 mil thickness Compatible with 40GHz probes Standard and Custom Calibration Standards 3744 NW Bluegrass PI ue Portland OR 97229 503 614 9509 503 531 9325 FAX www jmicrotechnology com Test Tooling for the Untestable N J microTechnology PUDRY Technology Get info at www HFeLink com Personal Propa Station Very Low Cost High Function A compact full featured modestly priced manually operated probe station developed for engineers and scientists Measure Microwave RF and DC paramet
87. lopment Marketplace News Advances in semiconductor technology favorable spec trum policy and demand for gigabit throughput capabili ties have created an opportunity for millimeter wave radio technology to prosper Applications in the mobile backhaul and consumer electronics markets in particular will drive the creation of an over 1 5 billion dollar mar ket for upper millimeter based technology in 2014 up from nearly 50 million in sales today according to a new Visant Strategies report www visantstrategies com One of the best emerging markets for upper millimeter radio vendors is backhaul on the E band for growing LTE WiMAX and HSPA wireless networks according to report findings Nearly 50 times the number of 60 GHz and E Band point to point radios are due to be shipped in 2014 compared to 2008 according to Upper Millimeter Microwave Radio Ready to Compete 2009 The study examines the 60 GHz E Q and W bands and evaluates systems above 100 GHz Existing and future applications such as mobile backhaul wireless enterprise bridges wireless fiber lateral emulations and government and public safety networks are studied Also examined is use 75dB Dynamic Range 5 8GHz Log Detector 2 14GHZ Voy vs Input Power 3mm x 3mm DFN 2 0 1 7 1 4 D 2 0 8dB 5 11 i p ACUO LONE z 3 blok 2 0 5 0 2 75 65 59 45 35 25 15 5 5 Input Power dBm Best in Class Performance at Half the Power W
88. low a phase margin of 30 from a total phase shift of 180 44 Unfortunately the significance of this invention as well as the operation principle of a negative feedback amplifi er was not fully understood at that time For instance Black s director of research insisted that a negative feed back amplifier would never work similarly the Patent Figure 14 schematic Negative feedback power amplifier Office initially did not believe it would work and took over nine years to decide to issue the patent 45 Even today Black s pioneering role for further achievements in feed back theory and practice is not well known The basic structure of a negative feedback amplifier at microwave frequencies is shown in Figure 14 a where the power amplifier bandpass filter BPF and feedback loop elements are chosen to provide a loop transmission greater than one with a phase shift of 180 within the operating bandwidth 46 In this case the BPF must be a single tuned resonator so that the phase shift introduced will be less than 90 By using a 50 dB gain power ampli fier an improvement of the third order intermodulation components by 10 dB from 30 dBc down to 40 dBc at midband frequency of 2 GHz with the power gain of the closed loop system of about 34 dB and output power of 33 dBm was achieved 47 It should be mentioned that the feedback power amplifier designed to operate at 835 MHz in communication system can provide
89. lued at a minimum of 4 million part of the building of GPS IIIA the next generation Global Positioning System Space System program Under the award Symmetricom will deliver its Model 9552 Ovenized Quartz Master Oscillators over three years including developing qualifying and delivering flight oscillators for the first two space vehicles ITT Interconnect Solutions has partnered with the Indian Space Research Organization ISRO in the use of its Micro D microminiature connectors for India s Chandrayaan 1 spacecraft which is currently in lunar orbit ITT s high reliability Micro D connectors are used to transmit information on data input and conversion equipment on the spacecraft which is carrying among other equipment a state of the art imaging spectrometer that will provide the first map of the entire lunar surface at high spatial and spectral resolution Cirtronics Corporation is proud to celebrate their 30 year anniversary as a leader in turnkey electronic manu facturing services EMS with the expansion of their manufacturing facility in Milford New Hampshire An additional 75 000 square feet has been taken on since the beginning of the year to accommodate future growth and existing customers requiring high level PCB assembly 12 High Frequency Electronics IN THE NEWS box builds and testing Cirtronics has maintained steady growth and now occupies almost the entirety of the Milford Technology Center TriQuint Semic
90. mands of Long Mission Life For additional information or technical support please contact our Sales Department at 631 439 9220 or e mail components miteq com 100 Davids Drive Hauppauge NY 11788 TEL 631 436 7400 FAX 631 436 7430 Get info at www HFeLink com Get info at www HFeLink com SPLITTERS 2 kHz to 12 6 GHZ 79 THE INDUSTRY S LARGEST SELECTION Mini Circuits offers thousands of power splitters combiners for applications from 2 kHz to 12 6 GHz and with power handling as high as 200 watts Choose from coaxial flat pack and surface mount housings for 50Q and 75Q applications The industry s largest selection includes 2 way through 48 way power splitters combiners in 0 90 and 180 configurations with outstanding performance in terms of insertion loss VSWR amplitude unbalance and phase unbalance All models are characterized with detailed data and performance curves available at the touch of a button using Mini Circuits advanced Yoni2 search engine These low cost off the shelf power splitters combiners are available immediately and backed by Mini Circuits 1year guarantee But if your application calls for a custom unit our develooment team will meet or exceed your requirements quickly and cost effectively Contact Mini Circuits today for the industry s largest selection of power splitters combiners PE Mini Circuits we re redefining what VALUE is all about Product availabilit
91. metal seal process combined with gold germanium brazing resulting in a rugged and reliable package The packages can handle temperatures up to 360 C A hermetic seal provides enhanced reliability for the device and offers protection from harsh environmental conditions meeting military standard requirements The packages incorporate copper composite bases or copper inserts for enhanced thermal dissipation Devices are mounted directly to the metal bases thus providing excellent electric ground to the backside of the chip They provide superior electrical performance for frequencies up to at least 6 GHz Packages are available in various shapes sizes and lead counts All can be provided with gull wing shaped leads for surface mounting Summary As this report illustrates the importance of device packaging means that it is receiving much research and product development attention Some work is unique to high frequency applications but there is also much that can be shared with high volume digital circuits MICROWAVE SWITCHES 100 MILLION CYCLES DC 18 GHz m p fa pi q nml ad ALA _ A CKEQ aAracainn PR otare stock Recession busters from N A Tired of the high cost and lost time that come with constantly having to replace your current mechanical switches Then why not change over to Mini Circuits ultra reliable DC to 18 GHz switches three versions available SPDT reflective SPDT absorptive and Transfer
92. modulation having a funda mental frequency at WCDMA chip rate When the signal inject into the non linear RF circuit receiver in this case the output signal can be expressed as follows considering only up to third order nonlinearity yt a x t ao x2 t As x t a A cos t a A I m t cos do A cos t as Ay 1 MC cos t 2d 1 ME A Ay cosb cos t aA cos a t 2a A A cos w t cos t a A A 1 m cos cos t 3 a A A 1 ME cosl t cost The term 3 a A A 1 m t cos Ot can be further expanded to cos t 3 2 a A A 1 ME cos t 3 2 a A lt A2 1 M cos w cos 2o t The term 3 2 a A A 1 m t cos t shows the blocker signal being modulated by the square of the amplitude of the TX leakage Cross Modulation With Adjacent Channel Blocker The straight forward thinking is to use the IIP3 for mula with little modification The quantity of the cross 22 High Frequency Electronics g D Q Q E E sth Qa 2 E E D 195 196 1 97 198 1 99 200 2 01 freq GHz 1 92 193 1 94 Figure 5 One tone is replaced by TX leakage signal modulation product can be evaluated with the approxi mated formula P crossmod Cfactor 2Pry Pag 2IIP3 8 where Chctor 18 the correction factor that takes i
93. mp Case Studies Monday Wednesday Friday Oct 26 Oct 28 Oct 30 9 00 10 30 AM 9 00 10 30 AM 9 00 10 30 AM Pacific Time Pacific Time Pacific Time Visit our website for more information or to register online with a credit card Phone 1 650 949 3300 Fax 1 650 949 4400 www besserassociates com Get info at www HFeLink com High Frequency Design SPECIFYING CABLES 7mm 3 5 mm 2 9 mm 2 4 mm SMC SMB MCX BNC SC HN 7 16 Styles Straight Male Straight Female Right Angle Bulkhead Female 4 Hole Flange Female Swept Right Angle High Performance Options Beyond these basic selections cable assemblies often have special performance requirements Stable phase over temperature exceptional flexibility extreme temperatures and repeated mating unmating are a few of these For example Storm Products pro vides phase stable cables according to the following customer choices in increasing order of cost and manufac turing difficulty Relative phase match a set of cable assemblies are matched to one another Failure of one requires that all be replaced Absolute phase match Cables are built to an exact standard This is more expensive but individual cables can be replaced Electrical length match over tem perature Should be used only for critical applications where the oper ating temperature cannot be con trolled Especially difficult to verify with short cables Phase stabilized cables have become mor
94. n Satellites Proc 23rd Eur Microwave Conf pp 11 14 1993 36 J Yi Y Yang M Park W Kang and B Kim Analog Predistortion Linearizer for High Power RF Amplifiers IEEE Trans Microwave Theory Tech vol 48 pp 2709 2713 Dec 2000 37 I Kim J Cha S Hong Y Y Woo J Kim and B Kim Predistortion Power Amplifier for Base Station Using a Feedforward Loop Linearizer Proc 36th Europ Microwave Conf pp 141 144 2006 38 F Zavosh D Runton and C Thron Digital Predistortion Linearizes CDMA LDMOS Amps Microwaves amp RF vol 39 pp 55 61 Mar 2000 39 L Sundstrom M Faulkner and M Johansson Quantization Analysis and Design of a Digital Predistortion Linearizer for RF Power Amplifiers IEEE Trans Vehicular Technol vol VT 45 pp 707 719 Nov 1996 40 A R Mansell and A Bateman Adaptive Predistortion with Reduced Feedback Complexity Electronics Lett vol 32 pp 1153 1154 June 1996 41 N Nascas and Y Papananos A New Non Iterative Adaptive Baseband Predistortion Method for High Power RF Amplifiers 2003 IEEE Circuits and Systems Symp Dig vol I pp 413 416 42 H S Black Wave Translation System U S Patent 2 003 282 June 1935 filed Aug 1923 43 H S Black Stabilized Feed Back Amplifiers Proc IEEE vol 87 pp 3879 385 Feb 1999 reprinted from Electronic Engineering vol 58 pp 114 120 Jan 1934 44 W B Bruene
95. nal at the linearizer output up to 10 was achieved with a 22 dBm signal at the linearizer input Figure 11 a shows the modified three path predistor tion linearizer structure where a balanced configuration with a nonlinear power amplifier is adjusted for suppres sion of the fundamental components with the resulting error signal Then the amplitude adjusted and properly phased error signal is amplified by an error amplifier and added to the linear component in the upper path which is a delayed portion of the input signal However it is very difficult to match the nonlinear characteristics of the pre distorter and the main power amplifier because general ly they differ both in size and number of stages which can only result in less than 10 dB improvement of adjacent channel leakage power ratio ACLR at 5 MHz offset from the center bandwidth frequency 86 Therefore it is very important for further linearity improvement to use simi lar devices in the predistorter and in the main power amplifier with a preferred balanced structure As an example the block schematic of a power amplifier module which includes a three path predistortion linearizer and a main power amplifier based on four power amplifiers configured into a balanced structure is shown in Fig 11 b In this case when the same transistors are used 48 High Frequency Electronics Figure 12 Power amplifier module with feedforward predistortion linearizer Complex
96. nclude e PA noise at RX band e RFIC phase noise at RX band e TX leakage ITP2 e TX leakage reciprocal mixing Additionally if blockers are present other concerns also include Radio Frequency Lowpass Filters is sure to fill ihe bill Nien are in R for eat delivery Sharp cutoff 1 3 Fc to a 50 dB stopband up to 100 watt power rating and popular connector selection are just a few of the features of these filters Heavy duty construction and small size 2 x 2 x 1 5 makes these filters ideal for laboratory or field use For more details on these and other types of filters check out our web site www eagle 1st com filter YAGER Phone 928 204 2597 Fax 928 204 2568 P O Box 4300 Sedona Arizona 86340 USA Get info at www HFeLink com Get info at www HFeLink com High Frequency Design 3G SPECIFICATIONS e Blocker reciprocal mixing e Cross modulation e Adjacent blocker ACLR e Front end switch IM2 IM83 products TX Noise at RX Band First of all the typical performance of the PA RFIC and duplexer is studied in this case Though the compo nents from different manufacturers could perform differ ently the typical performances used in this paper are summarized in Tables 1 2 and 8 which are based on major manufacturers datasheets It should be noted that for the sensitivity test case the transmitter output power is defined as maximum output power 24 dBm at the antenna connector In all oth
97. nearization of 1 85 GHz Amplifier Using Feedback Predistortion Loop 1998 IEEE MTT S Int Microwave Symp Dig pp 1675 1678 54 Y Y Woo J Kim J Yi S Hong I Kim J Moon and B Kim Adaptive Digital Feedback Predistortion Technique for Linearizing Power Amplifiers IEEE Trans Microwave Theory Tech vol MTT 55 pp 932 940 May 2007 55 T Arthanayake and H B Wood Linear Amplification Using Envelope Feedback Electronics Lett vol 7 pp 145 146 Apr 1971 56 S Kusunoki K Yamamoto T Hatsugai H Nagaoka K Tagami N Tominaga K Osawa K Tanabe S Sakurai and T lida Power Amplifier Module with Digital Adaptive Predistortion for Cellular Phones IEEE Trans Microwave Theory Tech vol MTT 50 pp 2979 2986 Dec 2002 57 J S Cardinal and F Ghannouchi A New Adaptive Double Envelope Feedback ADEF Linearizer for Solid State Power Amplifiers IEEE Trans Microwave Theory Tech vol MTT 43 pp 1508 1515 July 1995 58 V Petrovic and W Gosling Polar Loop Transmitter Electronics Lett vol 15 pp 286 288 May 1979 59 V Petrovic Reduction of Spurious Emission from Radio Transmitters by Means of Modulation Feedback Proc IEE Conf Radio Spectrum Conservation Techn pp 44 49 1983 60 M Johansson and L Sundstrom Linearisation of RF Multicarrier Amplifiers Using Cartesian Feedback Electronics Lett vol 30 pp 1110 1112 July1994 61 Y Nagata
98. nearizing technique to a 1 9 GHz MMIC power amplifier with 1 dB com pressed power of 17 dBm an improvement of ACPR up to 7 dB was achieved for a n 4 shifted QPSK signal As an alternative it is also possible to achieve positive Delay Figure 10 Block diagrams of power amplifier lineariz ers with input power splitting amplitude and negative phase deviations using a source grounded MESFET device with zero drain source supply voltage 34 The schematic diagram of such a linearizer is shown in Figure 9 b In this case for the device with a gate width of 240 mm at the saturation power of 20 mW under the gate bias condition of V 0 4 V the 3 dB increased power gain and of about 30 degree negative phase were achieved using the varying drain source resis tance Because of its simplicity such a linearizer can oper ate from 2 to 12 GHz with good thermal stability When it was implemented into a 50 W solid state power amplifier system at operating frequency of 7 GHz the system noise power ratio was improved over 15 dB dynamic range in particular by 2 dB at the 3 dB output power backoff point A more advanced configuration of the predistortion linearizer is based on the splitting of the input signal into nonlinear and linear paths using a directional coupler or a hybrid divider with subsequent subtraction of the resulting signals in the output coupler subtracter The block diagram of such a predistortion linearizer which employs
99. nference Web site http www cscis org October 27 29 2009 3rd IEEE International Symposium on Microwave Antenna Propagation and EMC Technologies for Wireless Communications Beijing China Information Conference Web site http mape09 bjtu edu cn November 8 11 2009 58th Int l Wire amp Cable and Connectivity Symposium Charlotte NC Information Conference Web site http www iwcs org SHORT COURSES Besser Associates 201 San Antonio Circle Suite 115 Mountain View CA 94040 Tel 650 949 3300 Fax 650 949 4400 E mail info besserassociates com http www besserassociates com Applied RF Techniques I August 17 21 2009 San Jose CA Advanced Wireless and Microwave Techniques August 17 21 2009 San Jose CA Ultra Linear High Efficiency Power Amplifier Design August 17 21 2009 San Jose CA SiGe Design for High Speed Circuits August 17 18 2009 San Jose CA Engineering UHF RFID Systems August 17 18 2009 San Jose CA Wideband HF Amplifier Design Techniques August 17 19 2009 San Jose CA Transceiver and Systems Design for Communications August 17 19 2009 San Jose CA Practical Wireless Signal Fundamentals August 17 19 2009 San Jose CA RF and Wireless Made Simple August 19 21 2009 San Jose CA RF and High Speed PC Board Design Fundamentals August 19 21 2009 San Jose CA IEEE 802 11 Operations August 19 21 2009 San Jose CA Signal Integrity from the Ground Up Digital More F lt 1 83 mmol
100. ngoing communication because the LUT training needs a mil lisecond and most communication protocols implement enough buffering for an error control method such as automatic repeat request How often the LUT would need a renewal depends on PA characteristics and the environ mental conditions Part 1 of this series appeared in the May 2009 issue and is available in the Archives section of our Web site www highfrequencyelectronics com Editor Author Information Andrei Grebennikov received the MSc degree in elec tronics from Moscow Institute of Physics and Technology and the Ph D degree in radio engineering from Moscow Technical University of Communications and Informatics He can be reached by e mail at grandrei ieee org References 1 H S Black Translating System U S Patent 1 686 792 Oct 1928 2 W D Lewis Self Correcting Amplifier U S Patent 2 592 716 Apr 1952 3 H Seidel Feed Forward Amplifier U S Patent 3 471 798 Oct 1969 4 H Seidel A Feedforward Experiment Applied to an L 4 Carrier System Amplifier IEEE Trans Commun Technol vol COM 19 pp 320 325 June 1971 5 H Seidel A Microwave Feedforward Experiment Bell System Tech J vol 50 pp 2879 2916 Nov 1971 6 R G Meyer R Eschenbach and W M Edgerley A Wide Band Feedforward Amplifier IEEE J Solid State Circuits vol SC 9 pp 422 428 Dec 1974 7 C C Hsieh and S P Chan A Feed
101. ns on the Web site early This information can be updated anytime up to the September 14 2009 deadline A sample Abstract and draft Digest paper can be found on the Web site dou ble spaced single column format is required for the paper review process The full call for papers can be viewed or downloaded here http www isscc org isscc 2010 ISSCC2010_callForPapers pdf CONSIDER PHASE MASTER ENHANCED 190E Series Cable Assemblies Highly shielded phase stable assemblies Compared to similar phase stable cables Phase Master 190E s enhanced multilayer shield construction yields e Increased shielding effectiveness 120 dB 1GHz min e Increased mechanical durability especially torsion resistance e Greater connector retention gt 40 Ibs straight pull with SMA connectors e A high level of phase stability vs temperature and flexure e Reduced insertion loss amp increased amplitude stability gt Download the data sheet www teledynestorm com PM190E gt Call us now for information on how Phase Master Enhanced 190E Series cables can benefit your program 630 754 3300 MAK TELEDYNE Microwave Business Unit Tel 630 754 3300 i STORM PRODUCTS 10221 Werch Drive Fax 630 754 3500 A Teledyne Technologies Company Woodridge Illinois 60517 storm_microwave teledyne com Get info at www HFeLink com Business News ASK intTag LLC has signed an agreement to lease space at an IBM facility in Essex Junction Vt The
102. nto account the difference between using two CW tone mea surement and modulated signal measurement The cor rection factor has been determined by comparing the dif ference between two tone case and the TX leakage case in simulation It is found that Ch ector 1s around 7 4 dB The corrected formula for the adjacent channel blocker test case is P 2P yy Pg 211P8 7 4 9 crossmod_adj Cross Modulation With Narrow Band Blocker The narrow band blocker appears at 2 7 2 8 MHz the offsets are much closer to the carrier compared the adjacent channel blocker case The approximate formula is found to be en ee 2Prx Lo 2ITP3 2 4 10 Adjacent Channel Leakage ACLR The receiver front end nonlinearity can create spec trum re growth for an adjacent channel blocker partially falling into the wanted band The approximate formula to calculate the leakage power is reported in 3 as F 20 75 2 P IIP3 1 6 PAR 11 aclr where PAR is the Peak to Average ratio of the downlink signal IV System Specification In order to determine the IP2 and IP3 requirements it is essential to consider all impairments including IM2 IM8 products which must be low enough for the receiver sensitivity degradation to be acceptable In the following sections IP2 and IP3 are derived The following analysis are applied to Band I typical case IP2 at TX Frequency Requirement at Sensitivity Level Maximum Allowed Noise
103. nts of 7 to 9 dB over a 750 MHz bandwidth at 3 dB power backoff with a power gain of about 10 dB and an input return loss of more than 10 dB To improve the gain capability of the negative feed back amplifier it is possible to combine its simplicity with a feedforward technique to provide a separate path for the error signal only Figure 15 shows the schematic of the power amplifier module with a feedback feedforward lin earization when the intermodulation distortion products at the main PA input symbolically plotted as out of phase should be phased in a way that they cancel the intermodulation distortion products at its output This modified negative feedback circuit can provide a reduc tion in the intermodulation distortion products equal to the traditional negative feedback topology without the usual reduction in overall amplifier gain 51 According to the intermodulation distortion analysis based on Volterra series the reduction of the power amplifier lin ear gain is dependent on the feedback at the fundamental only while the third order intermodulation components 50 High Frequency Electronics Power amplifier with feedback predistortion are reduced due to effect of the feedback factor both at the fundamental and at the intermodulation frequen cies when a reduction is equal to the loop gain in the latter case 52 This means that if the fundamentals were removed from the feedback loop there would still be a reduction
104. observations With the shift to self editing of doc uments e g conference papers web pages etc those that do the writing do not know what the rules are and since there is no editor to make the changes nec essary mistakes start to propagate I have noticed this with students when I review their papers and theses When asked why they make these mistakes they say they looked at previous stu 64 High Frequency Electronics dents work or conference papers Unfortunately they look at the wrong examples So I take it upon myself to get out the red pen and bleed all over their drafts until they get it right They remember this and get it right from then on Sven G Bil n Ph D PE Chief Technologist Center for Space Research Programs The Pennsylvania State University Editor I suspect the missing spaces between numerals and units are caused by two things 1 Writers don t know how to insert a non breaking space in their word processors Use of a regular space can result in numerals and units on different lines of text another writing no no that is frequently ignored even in prestigious refereed journals 2 With no space there is no need to hyphenate adjectival uses e g 5 V source correct as opposed to 5 V source incorrect I grade dozens of project reports from undergradu ate EE students every semester Whenever I think I ve seen every possible grammatical and style error one of my
105. of the intermodulation products due to the feedback at the intermodulation frequencies with unaffected amplifier gain In this case the feedback sig nal is coupled from the output of the power amplifier properly attenuated and phase shifted to form the error signal with cancelled fundamental by combining with a lower portion of undistorted input signal The resulting error signal is then amplified scaled in the amplitude and phase and finally combined with a delayed upper portion of the undistorted signal to form the composite signal at the amplifier input with out of phased distor tion products required to cancel the intermodulation products at the amplifier output The stability analysis shows that for narrow band amplifiers with minimum loop delay the reduction of third order intermodulation products can exceed 20 dB 51 The feedback linearization technique can also be implemented reversely to a feedforward scheme as shown in Figure 16 where the linearizing circuit con sists of the feedback canceling and feeding blocks 53 At the canceling block the amplitude corrected and phase shifted feedback signal is combined with the sam pled input signal to form the error signal which is then amplified and added with proper amplitude and phase to the input undistorted signal within the feeding block As a result for a 38 dB main amplifier gain the cancellation of the third order intermodulation products from 22 to 42 dBc were ac
106. olled Adaptive Feedforward Amplifier Linearizer 5th IEEE Int Conf Record Universal Personal Commun pp 788 792 1996 18 S G Randall J G McRory and R H Johnston Broadband DSP Based Feedforward Amplifier Linearizer Electronics Lett vol 38 pp 1470 1471 Nov 2002 19 W W Macalpine Distortionless Transmission System U S Patent 2 043 587 June 1936 20 P O Pedersen A Distortion Free Amplifier Proc IRE vol 28 pp 59 66 Feb 1940 21 L T Mucenieks C S Robertson B L Irvine and N Salvador RF Power Amplifier Linearization Using Parallel RF Power Amplifiers Having Intermod Complementing Predistortion Paths U S Patent 6 111 462 Aug 2000 22 M Billsberry Balanced Distortion Reduction Circuit U S Patent 6 734 726 May 2004 23 R Gutierrez Reflect Forward Adaptive Linearizer Amplifier U S Patent 6 573 793 June 2003 24 R Gutierrez The RFAL Technique for Cancellation of Distortion in Power Amplifiers High Frequency Electronics vol 4 pp 18 28 June 2004 25 R Gutierrez High Efficiency Linearized LDMOS Amplifiers Utilize the RFAL Architecture High Frequency Electronics vol 6 pp 22 28 Feb 2006 26 E Peterson Control of Distortion U S Patent 2 233 061 Feb 1941 27 T Nojima and T Kohno Cuber Predistortion Linearizer for Relay Equipment in 800 MHz Band Land Mobile Telephone System IEEE Trans Vehicular T
107. om MAPR 001011 850S00 1025 1150 850 7 8 50 MAPRST1030 1KS 1030 1000 88 53 1 MHz to 3 5 GHz _ L L MAPRST1214 150UF 1200 1400 150 7 9 49 Powers from a few watts to 1 kW per transistor PH1214 220M 1200 1400 220 74 50 e Our Power Hybrids Operation offers solutions for cg Rc ane 4 4 catione MAPR 002729 170M00 2700 2900 170 8 5 40 avionics radar and communications as well as PH2931 1355 5700 3100 135 75 40 industrial scientific and medical applications MAPP 002729 300M00 2700 2900 300 8 3 40 D PHA2729 240M 2700 2900 190 7 4 39 To see more of our Power Hybrids products visit MRF157 2 80 600 15 40 www macomtech com transistors or contact your local belinda ao ee MRF392 30 500 125 8 50 M A COM Tech nology Solutions sales office MRE150 2 150 150 17 45 DU28200M 30 175 200 13 55 UF28150 100 500 150 8 55 50 Ohm pallet M A COM Technology Solutions Inc Lowell Massachusetts 01851 North America 800 366 2266 Europe 353 21 244 6400 India 91 80 4155721 China 86 21 2407 1588 www macomtech com Technology Solutions Get info at www HFeLink com From Microwave and RF Amplifiers Mixers Multipliers F Signal Processing Components Frequency Generation Products Microwave Control Products Passive Power Components Integrated Assemblies Fiber Optic Products _ Communication Systems Redundancy Switchover Systems 1 1 and 1 2 Amplifier Systems Up and Downconverters
108. onductor announced it has signed a framework agreement with ZTE Corporation a manu facturer in China for wireless communication system equipment The document states ZTE will procure TriQuint components including but not limited to CDMA GSM and WCDMA ASICs in the value of no less than US 50 million in the 2009 calendar year Azimuth Systems Inc announced that the company has partnered with the Center for Multimedia Communication home of the Wireless Open Access Research Platform WARP Group at Rice University Azimuth will provide Rice University with an ACE channel emulator to enable extensive research on advanced transceiver architectures including beamform ing sphere detection and cooperative communications to be conducted during the summer of 2009 In addition to allowing direct testing capabilities for MIMO projects Azimuth and Rice University plan to collaborate on sev eral research projects which are poised to become part of 4G wireless Innovision Research and Technology ple and NXP Semiconductors announced a joint marketing and licensing agreement related to the Near Field Communication technology The deal brings together advanced Innovision IP and proven NXP expertise in firmware software and secure elements such as the SmartMX With this combination both companies target to win NFC integration deals into deep sub micron based connectivity solutions The agreement comes at a key point in the technology s deve
109. ontinue using leadframes which are very inex pensive for packaging In response DNP Electronic Device www dnp co jp has developed and begun mass production of a new leadframe called New LF using an innovative process that makes use of DNP half etching and taping technology New LF is created using selective half etching on only the fine pitch areas By doing this DNP can achieve a fine pitch of less than 0 15 mm without having to make the entire material thinner The use of this method will enable the future incorporation of 0 18 micron chips and allow for even shorter wires in existing products As an example DNP will be able to shorten the wire for each lead on a 60 micron LSI pad pitch 256 pin QFP to a length of just 4 mm Thermally Enhanced Packages In late 2008 StratEdge www stratedge com intro duced a new family of small outline thermally enhanced molded ceramic packages for power semiconductors The new line of packages can be used for silicon silicon car bide gallium nitride and other compound semiconduc tors in power integrated circuit applications Specific devices include amplifiers discrete transistors and diodes where greater than 0 5 watt power is consumed These thermally enhanced packages are designed for reliability and to mitigate the inherent stresses of braz ing dissimilar materials together All materials used in the packages have matched coefficients of expansion They are assembled using a glass to
110. or par allel perpendicular and coplanar applications is also in design Razor Beam connectors are well suited for high speed applications with per formance up to 10 GHz at 3 dB insertion loss The systems are available in a choice of stack heights from 4 to 6 mm for the ST4 SS4 Series and from 6 to 12 mm for LSS Series and LSHM Series Pricing begins at 0 054 per mated line Flexible Coaxial Cable and space applications wireless LANs and ultra high capacity E band communication systems The HMC ALH508 is a three stage GaAs HEMT MMIC LNA chip that oper ates between 71 and 86 GHz replac ing the HMC ALH459 It features 13 dB of small signal gain 4 5 dB of noise figure and an output power of 7 dBm at 1 dB compression and it operates from two supply voltages at 2 1 V and 2 4 V respectively while consuming only 30 mA of supply current HMC ALH508 die samples are available from stock and can be ordered online Hittite Microwave Corporation www hittife com Times Microwave Systems intro duces the Phase Track II an ultra thermally stable flexible coaxial cable that can significantly improve performance in phase sen sitive systems The cable has the most phase stable dielectric mate rial available to provide superior phase tracking performance from cable to cable with the lowest phase change through its tempera Samtec Inc www samtec com ture range The phase performance achievement in Phase Track II
111. orrison joins TRAK Microwave from Avnet Inc where his last position was Business Development Manager Keith earned his BSEE from the University of South Florida and brings to TRAK Microwave a success ful 23 year career in the RF Microwave industry with proven skills in both technical and sales responsibilities Keith and his family reside in the Tampa area where he is active in boating fishing and coaching youth sports Sudhakar K Rao an internationally recognized expert in satellite antenna modeling multiple beam antennas and reconfigurable antenna payloads is being honored by IEEE with the 2009 Judith A Resnik Award The award sponsored by the IEEE Aerospace and Electronic Systems IEEE Control Systems and IEEE Engineering in Medicine and Biology Societies recognizes Rao for innovations and contributions leading to advanced multi 14 High Frequency Electronics IN THE NEWS ple beam and reconfigurable beam payloads for commu nication satellites Rao s pioneering work has resulted in advanced satellite payloads featuring increased capacity improved performance and lower cost Most of his inven tions have already been deployed in space or are under preparation for deployment An IEEE Fellow Rao holds 32 U S patents and has published 130 technical papers Rao is currently a corporate senior fellow at Lockheed Martin Space Systems Newtown Pa where he has worked since 2003 ene Technologies LLC announced the ap
112. ors The Aeroflex 7100 delivers the most comprehensive testing capa bility for LTE mobile devices avail able in a single bench top instru ment enabling chip set designers software developers and handset manufacturers to accelerate the pace of development projects The Aeroflex TM500 has become the industry s de facto test mobile fully supporting LTE network develop ment verification and optimiza tion both in the lab and over the air Supporting LTE FDD and TD LTE standards the Aeroflex TM500 provides single multiple and capacity test mobile versions for testing against LTE base sta tions and network Aeroflex Inc www aeroflex com LAAN S Ni sa NS WHO SHOULD ATTEND OEM Design Engineers Sysiems Engineers Operators RF Engineers Engineering Managers Systems Designers WHY ATTEND Discover how new technology can improve your product design and or system performance today Gaim msight mio current market trends that will keep you ahead of the curve Make important professional contacts with peers technical experts and potential business pariners Hands on access to new products and technology in the exhibit hall Chance fo discover what s coming next Antenna Design Engineers Application Developers Systems Integrators Value Added Resecllers Disinbutors Product Managers Sccking New Applications Parincrnpe Opportunies Antenna Manufacturers REGISTER Now One Day and Exhibit Only passes avail
113. over the air applica Symmetricom Inc announced the SyncServer S300 S350 SAASM NTP Network Time Server that meets the Global Positioning System GPS security require ments of the U S Department of Defense DoD SyncServer S300 S350 SAASM is a high perfor mance time server with a secure Selective Availability Anti Spoofing Module SAASM GB GRAM compliant GPS receiver An ultra high bandwidth NTP time server SyncServer 300 S350 SAASM is based on Symmetri 34 High Frequency Electronics Compact Converter Exciter Spinnaker Microwave introduced the Model SMS ACX RF convert er exciter a compact module that generates signals with modulating bandwidths up to 1 GHz with vari ous combinations of phase fre quency and amplitude characteris tics and produces an output at any frequency from 10 MHz to 14 GHz and optionally to 40 GHz The SMS ACX is a cost effective alter tions With appropriate antennas the IFF 45TS has a test range to 3 km and is capable of ramp testing installed equipment Orders are being accepted for the now AIMS certified IFF 45TS test system Aeroflex Inc www aeroflex com 1250 W Ku Band Amplifier Comtech Xicom Technology intro duces a new lightweight outdoor traveling wave tube amplifier TWTA It is the SATCOM indus try s first outdoor packaged 1250 watt TWTA designed to operate in the Ku band uplink frequency This new amplifier Model XTD 1250KL uses a high eff
114. owncom2009 org June 24 25 2009 Military Testing amp Evaluation Summit 2009 McLean VA Information Conference Web site http www idga org ShowEvent aspx id 185024 August 17 21 2009 IEEE EMC Symposium Austin TX Information Conference Web site http www emc2009 org September 1 2 2009 Antenna Systems Conference Philadelphia PA Information heatherk infoweb com http www antennasonline com September 9 11 2009 ICUWB 2009 IEEE International Conference on Ultra Wideband Vancouver Canada Information Conference Web site http www icuwb2009 org September 15 18 2009 WCAI s 15th Annual International Symposium Chicago IL Information Conference Web site http www wcai com September 21 25 2009 IRMMW THz 2009 The 34th International Conference on Infrared Millimeter and Terahertz Waves Seoul Korea Information Conference Web site http www irmmw thz2009 org September 28 October 2 2009 European Microwave Week Rome Italy Information Conference Web site http www eumweek com September 29 October 1 2009 Aero amp Defense Test ITEA Annual Symposium 2009 Baltimore MD Information Conference Web site http www aerodefencetest com High Frequency Electronics October 6 8 2009 RF amp HYPER Europe 2009 Paris Nord Villepinte France Information Conference Web site http www rfhyper com October 11 14 2009 2009 IEEE Compound Semiconductor IC Symposium Greensboro NC Information Co
115. p second order intercept point IP2 third order intercept point IP3 and so forth 16 High Frequency Electronics pf Test Conditions DPCH Ec lt REFSENS gt 14dB lt REFSENS gt 41 dB_ lor S SREFlor gt 140B lt REFlor gt 410B O52 O 29 o le O 52 Tx power 20 dBm Table B Adjacent channel blocking ll Second Order Nonlinearity The second order nonlinearity of the receiver will square the modulated blocker signal such as the TX leakage signal produc ing DC and low frequency components which fall into the receive band of the direct conver sion receiver The AM amplitude modulated signal is demodulated into the RX channel with twice bandwidth of the original interfer ers Moreover a strong blocking signal will also intermodulate due to second order non linearity with the TX leakage signal to create a TX image which can fall into the band Mathematic Formula of IIP2 In general the output signal of a nonlinear system can be described as follows 2 3 Va aV QV aV where V is the output voltage and V is the Rev Up Your System Performance with Micro Lambda s Frequency Synthesizers MLSW Series Synthesizers Wideband frequencies covering 600 MHz to 13 GHz in bands 1 Hz resolution 10 MHz external reference 10 to 12 dBm output power Phase noise of 112 dBc Hz 100 kHz offset at 10 GHz MLSE Series Synthesizers Extreme wideband frequencies covering 2 20
116. point ment of Paul Schmitz as the company s 4 Vice President of Sales and Marketing In his new position Mr Schmitz will hold responsibility for LadyBug s overall sales and marketing strategies worldwide and will oversee the company s direct sales force field representatives and distribu tion network He reports to LadyBug President Richard Hawkins Mr Schmitz Gangs TE Ta of high technology product market ing and sales management experience to his new position Prior to joining LadyBug he served as Senior Product Platform Manager for Agilent Technologies Microwave Signal Generator business sector Santa Rosa Calif There he initiated successful new product introduc tions technical upgrades and competitive positioning enhancements resulting in both sales and market share growth Mr Schmitz holds an M S in Engineering Management from Stanford University Palo Alto Calif and a B S in Electrical Engineering from the University of Colorado Boulder Colo He and his family reside in Forestville Calif Alen Fejzuli Conference Chair of WAMICON 2009 recently announced this year s awards recipients spon sored by CREE Inc at WAMICON 2009 in the following categories Best Conference Paper A Multilayer Jerusalem Cross Frequency Selective Surface with Adequate Angular Stability at the 2 4 GHz ISM Band S Melais T Weller Best Student Paper Study of a Polar Sigma Delta Transmitter Associated to a High
117. requirements are not extremely high it is possible to use a predistortion linearizer which provides the positive amplitude and negative phase deviations for input RF signal to compensate for the active device non linearity This is possible since nonlinear behavior when a power amplifier is operated close to saturation usually represents the opposite behavior of its amplitude and phase characteristics Historically the initial idea to com pensate for the third order intermodulation products arising in vacuum tube amplifier was to use the lin earization scheme where a nonlinear amplifier having a compressing characteristic is followed by a nonlinear ele ment having an expanding characteristic and producing the third order distortion of opposite sign to that of the amplifier 26 The block diagram of the linearized power amplifier system with a predistortion linearizer with indication of the appropriate amplitude and phase depen dences at each stage of the system is shown in Figure 7 where a variable attenuator for adjusting the amplitude level of the input signal is also included At microwaves a linearized power amplifier usually includes two isolators for stable operation conditions The conventional predis tortion linearizer circuits generally use either diodes or transistors as sources of intermodulation 27 28 As an interesting fact as early as the beginning of the1920s it was claimed that by using similar vacuum tubes in bot
118. s Check our website for latest schedule Besser Associates m The Worldwide Leader in RF and Wireless Training Besser Associates Presents EMC Shielding Grounding Techniques for Chip amp PCB Layout delivered via web classroom Summary This seminar discusses techniques for identifying the sources of unwanted coupling and radiation and systematic approaches for their minimization Target Audience Product and package design engineers of all expertise levels will benefit from this course A basic engineering background BSEE or equivalent is required Outline Electomagnetic Compatibility e Definition of EMC Ground definitions Measuring Radiation large scale test box and localized probes Coupling and Radiation e Differential and common mode connections Coupling control techniques Crosstalk between microstrip vs other lines Radiation vs loop area Isolation techniques Shielding e Shielding effectiveness and wave impedance shield materials Effects of slots and holes in shield Mul tiple small or fewer large holes Transfer impedance as the effectiveness parameter Grounding e Current distribution between shield and ground plane Coupling through common ground inductance e Shared vias Ground plane discontinuities and in ductance effects Choking off ground currents filter ing the power lines Experimental Numerical Techniques of Problem Solv ing a
119. s couplers etc Many of these modules are still in existence but have been shrunk to the point where they are no longer modules but can be treated as individual SMT components Recently packaging had taken two distinct paths one for conventional building block components the other for highly complex chips or multiple chip subsys tems There are some common elements mainly in the board attachment methods pads solder bumps or solder balls Differences are in the number of pins and the physical enhancements needed for mechanical support in larger packages An area of significant development is thermal man agement RF microwave ICs do not have the same advan tage of digital ICs regarding scaling of power consump tion with size Thus smaller die and higher density cir cuits make it difficult to remove heat form areas where currents are concentrated To address thermal issues many recently developed packages include exposed metal pads that provide heat dissipation via the PC board or an external heat sink A major development is flip chip technology where the IC die is mounted upside down The substrate is attached to a heat spreader on the top of the package which has lower thermal resistance than previous packaging methods Also the metal layer connections are much closer to the package s external connections improving high frequency performance Advanced research work includes thermal enhance ment using carbon
120. sed diode resistance R the linearizer achieves positive gain and negative phase devi ations By applying such a linearizer to a 2 7 GHz power amplifier a maximum improvement of 5 dB was achieved for low quiescent current conditions at output power of 34 dBm Positive amplitude deviation with negative phase deviation can also be achieved using a series feedback GaAs MESFET amplifier with a large source inductance L a block diagram of which including matching circuits is shown in Figure 9 a 83 The required amplitude and phase deviations are due to nonlinearities of the device transconductance gm gate source capacitance Com and differential drain source resistance Rys For the device with a gate width of 1 2 mm a nonlinearity of g con tributes to the positive amplitude deviation when L 20 nH At the same time nonlinearities of both g and Ris contribute to the negative phase deviation when L 2 3 nH A nonlinearity of C has a negligibly small effect on both the amplitude and phase deviations As a result for a linearizer with L 16 nH at an operating frequency of 1 9 GHz the positive amplitude and negative phase devi ations were obtained across the input power dynamic range from 5 to 18 dBm with amplitude deviation of 2 5 dB and phase deviation of 30 at 18 dBm input power The GaAs MESFET device was biased in Class AB mode with a drain source supply voltage of 2 V providing a quiescent current of 78 mA By applying this li
121. sonnetsoftware com Precode Decode Software Anritsu Company extends the 100 Gbps test capabilities of its industry leading MP1800A signal quality analyzer with the introduction of precode decode software that has been developed to support the latest optical phase modulation schemes including DP QPSK DQPSK DPSK and ODB used in next gen eration networks The precode and decode functions of the MX180000A 001 002 option help reduce 100G and 40G core network R amp D costs as well as time to market by support ing fully automatic generation of modulation signals needed to evalu ate 100G DP QPSK and 40G DQPSK DPSK and ODB optical modulation technologies The pre code decode software package is priced at 1 500 while the base MP1800A for DQPSK is 257 000 Delivery is 6 to 8 weeks ARO Anritsu Company www us anritsu com 3D Planar EM Simulator Sonnet Software Inc introduces Sonnet Lite Release 12 a free 3D Planar EM simulator currently available for download as a tool for learning and experimenting in high frequency RF transmission lines circuits packages and anten nas Release 12 is Sonnet s sixth full release of Sonnet Lite over the past decade and is a fully function al EM software tool that does not expire and is based on a proven industry standard in the Sonnet Programmable Att ib eesiss enuator BroadWave Technologies has developed an electromechanical 75 ohm programmable attenuator
122. tes with the ADS circuit a filter for fast efficient simulation and optimization In the past using point tools designers needed to leave the design flow to perform multiple 3 D drawings design setups re sim T TIMES worowavesysreus Available From ats 2 LMR LMR 75 LMR FR LMR UltraFlex LMR PVC LMR DB LMR LLPL TFlex 402 TFlex 405 StripFlex StripFlex TI _ Connectors amp Accessories LMR TFle an d StripFlex are Regi istered Trademarks of Times Microwave Systems ST RIBOE gt i BY a 1 CR OWAVE E Phone 888 591 4455 or 772 286 4455 Fax 772 286 4496 E mail admin microwavecomponentsinc com Web Site www microwavecomponentsinc com ISO 9001 2000 CERTIFIED Get info at www HFeLink com koe Figure 2 An example LTCC Balun showing the module the LTCC Balun mounted on test board and the Balun and test board meshed for full FEM 3 DEM simulation ulations and error prone manual imports EMPro s 3 D EM integration into the circuit or module design flow can save designers hours per simula tion This can dramatically lower the overall cost of design The 3 D EM design environment in EMPro 2009 is designed to provide the fastest route from 3 D drawing to accurate simulated results The key capabilities include e Two powerful 3 D EM simulators in one platform Finite Element Method FEM and Finite Difference Time Domain FDTD simulators cover the bro
123. the antenna performance in wireless consumer products such as 4G smart phones netbooks and routers under realistic operating sur roundings that include the product housing battery pack PCB boards and proximity orientation relative to the human hand and head It is quite remarkable that such a simulation is even possible but with GPU acceler ated FDTD simulation and multi threaded post processing results like those shown in Figure 4 can be obtained in approximately one hour Figure 4 EMPro allows designers to simulate antenna performance under real world conditions in a cell phone enclosure including human head and hand proximity to deter mine SAR HAC hearing aid com patibility MIMO multiple input multiple output correlation and feed impedance 42 High Frequency Electronics With these fast computation times it is an easy matter to examine multiple orientations of the antenna representing different human user handling positions providing the nec essary data for the design of adaptive antenna matching circuits in ADS The temperature rise in the human head due to cell phone antenna radi ation can also be checked for compli ance against industry safety Specific Absorption Rate SAR standards so that expensive rework on the actual phone during hardware testing can be avoided IC Interconnects to Package System In Package with Wire Bonds or Flip Chip Solder Ball The design of an RFIC MMIC or
124. the difference between using the two tone measurement and the TX uplink modulated signal is needed The two tone simulation results are shown in Figure 2 and the simulation results with TX uplink signal are shown in Figure 3 With the TX uplink signal since it is modulated the low frequency IM2 products are measured by integrating the power from 1 kHz to 2 0 MHz in the frequency domain The difference of IM2 between the two tone and modulated signal is 9 72 dB The IP2 two tone formula for TX leakage case with correction factor is as follows l DEM Figure Advanced Design System ADS bench for IP2 simulation 2009 AWR Corporation All rights reserved Advancing the wireless revolutlon N Fin F a Shatter your EMI speed a ee n0 M Get info at www HFeLink com a s AXIEM is a quantum shift in momentum for 3D planar EM simulators More than lightning quick AXIEM is the most accurate solver in its class And it s capable of solving big problems as well typically 10x faster than current alternatives Let us prove it on one of your toughest designs If it doesnt shatter your EM speed record lunch is on us Go to axiem3d com lunch and take the challenge Think Fast Think AXIEM High Frequency Design 3G SPECIFICATIONS m2 req 1 000MHz dBm S10 36 00 Figure 2 Low frequency output of two tone simulation for IP2 E ipdek 2 P IIP2 15 722
125. ther linearity improvement can be achieved by using a combined Cartesian loop and adaptive baseband predistortion linearization techniques using DSP as shown in Fig 18 b 61 Adaptive predistortion provides a continuous adjusting of the loop time delays and updat ing of the predistorter lookup table with information of the PA nonlinearity which changes with supply voltage temperature load voltage standing wave ratio VSWR output power and other environmental effects For exam ple by using the predistorter implemented in DSP with 5 bit effective resolution digital to analog converters at its output and optimized using a direct search algorithm a further 11 dB reduction of the third order intermodula tion components was achieved when a predistorted com ponent was added to the error signal 62 However as the bandwidth of transmitting signal gets wider the feedback 52 High Frequency Electronics loop delay mismatch becomes increasingly detrimental to the convergence of LUT adaptation algorithm In this case the analog Cartesian feedback which is separated from LUT can be used only for LUT training thus result ing in the energy efficient and low complexity adaptive linearization 63 Then after the completion of LUT training the analog Cartesian is turned off so that open loop predistortion is performed using a compact Cartesian LUT to linearize wideband signals The renew al of the LUT can happen without interrupting o
126. tput power of 27 5 dBm and ACPR of 49 dBc The CMOS integrated circuit whose size is 2 5 x 2 5 mm consumed of about 15 mA The AM AM linearization can also be achieved by dynamically varying the gate bias voltage of the final stage transistor In such an adaptive double envelope feedback two stage MESFET power amplifier the gain variations are detected directly while the phase varia tions are detected through a 90 branch line coupler 57 This is possible since when the gate goes more negative the MESFET is closer to pinch off and its gain is reduced On the other hand as the gate goes more positive the MESFET will approach Class A where its gain is maxi mal The dynamic bias on the gate of the device resulted in a 1 dB increase in P 4 which improved the PAE by 5 To overcome the limitation of the envelope feedback technique to correct for AM PM distortion the polar loop technique can be used where a phased lock loop is added to the envelope feedback system resulting in a polar loop feedback 58 However the key disadvantage of a polar feedback occurs in the generally different bandwidths required for the amplitude and phase feedback paths as well as locking capability of the phased lock loop is limit ed at low signal level in the presence of interference cou pled to the transmitter output from antenna that leads to a poorer overall performance The Cartesian feedback technique can solve at some extent the problems associat
127. tuitive process that engineers use to find new design solutions Teledyne Cougar continues expanding performance and frequency options so you have the right amplifier for any design or application Frequencies to 20 GHz high power options and reliable performance make our amplifiers your best choice A3CP7029 A3CP8027 A2CP11039 ACP12019 A2CP14639 ACP16025 ACP18015 A2CP18225 ACP20015 ACP20215 3 0 8 0 3 0 8 0 23 0 5 0 11 0 12 0 6 0 12 0 99 6 0 14 0 11 0 8 0 16 0 1 8 0 18 0 9 0 10 0 18 0 15 0 2 0 20 0 10 0 2 0 20 0 20 0 2 0 3 6 27 5 4 0 21 5 4 0 33 0 4 0 28 0 4 0 33 0 4 3 28 0 4 0 15 5 4 5 25 5 4 5 16 0 4 8 18 0 33 5 51 32 48 42 57 39 52 42 57 42 65 23 31 35 44 26 29 28 45 Typical and guaranteed specifications vary versus frequency see detailed data sheets for specification variations Teledyne Cougar your source for reliable RF and Microwave amplifiers subsystems integrated assemblies and value added service needs A Teledyne Technologies Company TELEDYNE COUGAR ISO 9001 2000 AS9100 MIL PRF 38534 Class H amp Class K Certified 408 522 3838 Fax 408 522 3839 www teledyne cougar com email cougar teledyne com Get info at www HFeLink com MEETINGS amp EVENTS 8 CONFERENCES June 22 24 2009 Ath International Conference on Cognitive Radio Oriented Wireless Networks and Communications Hannover Germany Information Conference Web site http www cr
128. uplink sim ulation for IP2 y t a Vt ag VE ag VBO The third order intermodulation products are Y t arrorder 3034 Ay COS 0 tcos w t 3a A A cos tcos w t _ 803A A A 3a A7 A 4 4 cos 20 W t cos 20 t The third order IM3 products are created at 2f1 f2 2f1 f2 2f2 fl and 2f2 f1 In a down conversion receiv er only the low frequency products are interesting The power of IM3 at low frequency is expressed in following classical formula 1 IM3 at 2f2 f1 Pirm dBm 2 Po P 2 IIP3 5 2 IM3 at 2f1 f2 Pryg dBm 2 P P 2 IIP3 6 If two tones are equal the formula becomes Piim dBm 3 Pp 2 ITP3 7 IIP3 With Cross Modulation The TX signal leakage signal can be cross modulated by a strong blocker such as a narrow band blocker adja cent channel blocker with the cross modulated signal falling into the receive channel An example is illustrated in Figures 4 and 5 Figure 4 shows the output of a nonlinear circuit with two tone sig nal Replacing one tone by a TX uplink leakage signal in When you need it most All are key when purchasing high performance microwave transmission lines Currently a SELECTION of IW products are employed on the Navy s latest platforms in a variety of systems including the AIMS ATC IFF radar PHALANX close in defense system HDR and MILSTAR W s SUPPORT for thes
129. when properly amplified and phased in the reflected path cancels the output intermodulation distor tions produced by the lower power amplifier This two part article presents a wide range of techniques for amplifier linearization along with historical notes to help us appreciate the creative work in their development lation correcting signal forwarded to the input of the other power amplifier which are connected in parallel or balanced configuration 23 24 Figure 6 shows a block diagram of the RFAL amplifier which includes the two identical power ampli fiers a low distortion booster amplifier for ward and reflected paths with two directional couplers at the input and delay line and in phase combiner at the output With the RFAL technique the power combining efficiency of the two power amplifiers approaches that of the conventional parallel power amplifier con figuration while the intermodulation prod ucts can be improved from 20 to 30 dBc at the center bandwidth frequency The basic principle of RFAL operation can be described as fol lows when the two tone forward fundamental signal is reflected from the transistor input of upper power amplifier the resulting reflected two tone fundamental sig nal is out of phase relative to the input forward signal and is in phase relative to the output signal In this case the intermodulation components appeared at the upper power amplifier input as a result of its active dev
130. wing mathematically defined surfaces for antennas to obtain the optimal performing geometry e Adaptive meshing follows the shape of the critical components to always deliver the best accuracy and convergence in a 3 D EM sim ulation It remains active during parameterized sweeps to ensure the most accurate simulation pos sible e Dynamic real time plots during simulation allows designers to begin see EM effects as the simu lation runs and without waiting for it to complete Designers can interrupt the simulation to adjust the geometry and the built in intelligent simulation setup will restart with minimal user input e Intuitive setup of EM field sensor locations and immediate viewing of results for antenna far field Specific Absorption Rate SAR and Hearing Aid Compatibility HAC through multi threaded accelerated post processing elimi nating the long wait in traditional 3 D EM simulators where post processing can take as long as the simulation itself EMPro Application Examples The following examples of typical RF modules interconnects antenna designs and packages demonstrate the value of EMPro s capabilities for achieving a faster more accurate engineering design flow in the ADS environment LTCC Low Temperature Co fired Ceramic or Laminate RF Modules RF modules typically are con structed from multilayer ceramic or laminate dielectric material with embedded RF passive components between the layers Suc
131. with two RF chokes for DC feed and two blocking capacitors which provides positive amplitude and negative phase deviations when input power increas es 31 The equivalent circuit of the series diode is shown in Figure 8 b where R is the diode equivalent resistance and C is the junction capacitance With the increase of an incident input signal power the forward diode current increases that leads to the decrease of the diode resis tance R In this case the positive amplitude and negative phase deviations can be achieved under low forward bias conditions when the diode current ranges from 0 1 to 1 0 mA and in the latter case the phase deviation can reach a value of 30 Applying such a linearizer to a 1 9 GHz MMIC power amplifier with saturated power of 22 5 dBm an improvement of adjacent channel power ratio ACPR of 5 dB can be achieved for the QPSK mod ulated signal when output powers are less than 15 dBm A similar improvement of ACPR can be achieved by using a linearizer based on a parallel Schottky diode with the bias feed resistor R which is shown in Figure 8 c 32 With the increase of input power the bias point of a diode changes due to the voltage drop across the resistor R caused in turn by the increased diode forward current Input matching circuit Output matching circuit Chutput matching circuit Input matching circuit Figure 9 Transistor based linearizers As a result due to the decrea
132. y is listed on our website ISO 9001 ISO 14001 CERTIFIED Mini Circuits minis com P O Box 350166 Brooklyn New York 11235 0003 718 934 4500 Fax 718 332 4661 For detailed performance specs amp shopping online see Mini Circuits web site The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI CIRCUITS At www minicircuits com IF RF MICROWAVE COMPONENTS 448 Rev Org ar There is noc JMD Emerson Connectivity Solutions deliver custom engineered products and solutions to satisfy the most demanding and complex requirements Our wide variety of microwave components connectors and cable assemblies are widely used on many high reliability programs both military and commercial Connector and cable integrity is critical to the attainment of highly reliable microwave systems System performance can be enhanced and assured by Emerson Connectivity Solutions wide variety of connectors fixed length flexible and semi rigid cable assemblies along with high performance quick connect and test adapters For more information please visit us at www emersonnetworkpower com connectivity or 800 247 8256 Wireline Wireless and Optical Connectivity Solutions Just another reason why Emerson Network Power is the global leader in enabling Business Critical Continuity Connectivity Solutions EMERSON Network Power EMERSON CONSIDER IT SOLVED Get info at www HFeLink com ALSO PUBLISHED ONLINE AT JUNE20
133. yelectronics com Tel 707 544 9977 Fax 707 544 9375 Associate Editor Katie Landmark katie highfrequencyelectronics com Tel 608 437 9800 Fax 608 437 980 Business Office High Frequency Electronics 7 Colby Court Suite 7 436 Bedford NH 03110 Editorial and Production Office High Frequency Electronics 104 S Grove Street Mount Horeb WI 53572 Also Published Online at www highfrequencyelectronics com Subscriptions Sue Ackerman Tel 651 292 0629 Fax 651 292 1517 circulation highfrequencyelectronics com BPA High Frequency Electronics USPS 024 316 is published monthly by Summit Technical Media LLC 3 Hawk Dr Bedford NH 03110 Vol 8 No 6 June 2009 Periodicals Postage Paid at Manchester NH and at additional mailing offices POSTMASTER Send address corrections to High Frequency Electronics PO Box 10621 Bedford NH 03110 0621 Subscriptions are free to qualified technical and management personnel involved in the design manufacture and distribution of electronic equipment and systems at high frequencies Copyright 2009 Summit Technical Media LLC sun Media LLC High Frequency Electronics EDITORIAL 3G 4G Technology Does the Standard Really Matter Gary Breed Editorial Director ehind all the marketing and advertising of B mobile broadband lie several different trans T mission technologies including LTE EDGE W CDMA TD SCDMA HSDPA WiMAX some variations on these

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High Frequency Electronics &mdash; June 2009 Online Edition

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High Frequency Electronics — June 2009 Online Edition