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Chapter 2: Extract Routines

1. lt CURVE_SINGLE_LINE gt curve bias ldcapacitance vg lt EXPR gt vb lt EXPR gt bias ramp lt EXPR gt bias step lt EXPR gt bias stop lt EXPR gt temp val lt EXPR gt soi qss lt EXPR gt workfunc lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt curve depth lt IMPURITY gt lt MATERIAL gt mat occno lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt curve depth srp material silicon polysilicon mat occno lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt curve lt VAR_AXIS gt lt VAR_AXIS gt deriv lt VAR_AXIS gt lt VAR_AXIS gt lt DERIVATIVE n gt edcurve lt DEFOCUS_AXIS gt lt CRITICAL_DIMENSION_AXIS gt lt DOSE_AXIS gt dev lt EXPR gt datum lt EXPR gt x step lt EXPR gt lt CURVE_MULTI_LINE gt curve bias ldjunc cap lt MATERIAL gt mat occno lt EXPR gt region occno lt EXPR gt junc occno lt EXPR gt temp val lt EXPR gt soi qss lt EXPR gt workfunc lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt lt TEST_SETUP gt lt MATERIAL gt mat occno lt EXPR gt region occno lt EX
2. EXPR gt y val gt ERIA bias s EXPR gt soi semi poly te m tep lt EXPR gt x val lt F mp val lt n qfl p qfl intrinsic potential n mobility ld econductivity lysilicon region occno lt EXPR gt EXPR gt region lt QSTRING gt EXPR gt at occno lt EXP Py EXPR gt bias stop lt EXPR gt region lt QSTRING gt R gt region occno lt EXPR gt EXPR gt SILVACO International 2 9 PC Intera ctive Tools User s Manual lt Vv dis C g v E t f b S S h h 1 q 1 1 a T i w r c 1 v r r r VvV S P g v v 1 a a a Y Y Z Z P e ih ME d OR interface occno lt EXPR gt qss lt EXPR VAR_AXIS gt lt electrode gt voltage at electrod lt electrode gt current at electrode lt electrodel gt lt electrode2 gt capacitance between electrodel and electrode2 lt electrodel gt lt electrode2 gt conductance between electrodel and electrode2 int lt electrode gt internal voltage at electrod ime transient time mperature temp device temperatur requency freq frequency eam lt beam no gt light intensity for specified beam number imaginary lt Mode gt imaginary value for specified Ss code real lt Mode gt real value for specified S code imaginary lt Mode gt im
3. sheet res p sheet res n sheet res conduct p conduct n conduct lt TEST_SETUP gt CURVE_TYPE CURVE_DEF lt X_AXIS gt lt Y_AX lt AXIS gt lt AXIS gt lt EXPR gt lt AXIS gt lt EXPR gt lt AXIS gt lt EXPR gt lt AXIS gt lt EXPR gt lt AXIS gt lt EXPR gt abs lt AXIS gt take log lt AXIS gt take log10 lt AXIS gt ta sqrt lt AXIS gt tak atan lt AXIS gt tak dydx lt AXIS gt cal lt AXIS gt inverts all points along axis min CURVE_DEF r max CURVE_DEF r ave CURVE_DEF r slope x or y interce area from CURVE xintercept material Silicon polysilicon region occno lt EXPR gt mat occno lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt workfunc lt EXPR gt soi semi poly incomplete temp val lt EXPR gt lt MATERIAL gt mat occno lt EXPR gt region occno lt EXPR gt bias lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt OR interface occno lt EXPR gt qss lt EXPR lt X_AXIS gt lt Y_AXIS gt x min lt EXPR gt x max lt EXPR gt where x min and x max define X limits of curve Is gt lt AXIS gt lt AXIS gt lt AXIS gt lt AXIS gt lt AXIS gt s abs of all points along axis s log of all points along axis ke
4. Automated command writing is accomplished with the use of the DeckBuild Extract popup window This is accessed from the Commands menu when either SSUPREM3 or ATHENA is selected as the current simulator l V Curves can be visualized with TonyPLot if the Compute I V curve option is selected on the EXTRACT popup In this case select from either forward or reverse characteristics and specify the axes of the curve e All extracted parameters may be used as optimization targets e All extracted parameters are appended to the default results file in the current working directory Unless specified using the datafile filename syntax it defaults to results final 2 34 SILVACO International Extract R outines When running under the VWF all extracted parameters will be logged for regression modeling QUICKBIP solves fundamental system of semiconductor equations continuity equations for electrons and holes and Poisson s equation for potential self consistently using the Gummel method The following physical models are taken into account by QUICKBIP Doping dependent mobility Electric field dependent mobility Band gap narrowing Shockley Read Hall recombination Auger recombination QUICKBIP is fully automatic so that it is unnecessary to specify input biases QUICKBIP calculates both forward and inverse characteristics of the BJ T For an n p n device these sets are as follows 1 2 3 Veb 0 3 Veb_final Veb step 0 025
5. For details of Extract curve manipulation syntax see the E xtract Syntax Description section earlier in this chapter For instance using the BJ T curve example above the user could find the maximum of I c Ib vs Ic or maximum beta by writing extract name max beta max curve i collector i collector i base max min and ave all work on the Y axis of the curve The sloped lines and intercepts often work together The primitives minslope and maxslope can be thought of as returning a line Extracting a line by itself has no meaning so three other operators take a line as input The operators are slope which returns the slope of the line and xintercept and yintercept which return the value where the line intercepts the corresponding axis For instance a Vt test for MOS devices looks at a curve of Vg x versus Id y and finds the X intercept of the maximum slope Such a test would look like extract name vt xintercept maxslope curve abs v gate abs i drain Some Vt tests take off Vd 2 from the resulting value You could write extract name vt xintercept maxslope curve abs v gate abs i drain ave v drain 2 Note that the last example uses ave v drain 2 The min max and ave operators can be used on both curves extract name Tave ave curve v gate i drain and also on individual curve axes extract name Tave ave i drain or even on axis funct
6. occno 1 datafile results final ldvt type ntype 2d area x step 10 of device size temp val 300 bias 0 ldvt bias stop 5 bias step 0 25 vb 0 ldcapacitance bias stop 5 bias step 0 soi FALSE semi poly FALSE incomplete FALSI Gl Examples of Process Extraction 25 vb 0 vg 0 bias ramp vg Note Extract commands maybe entered on multiple lines using a backslash character for continuation but the syntax shown below should be entered on a single line although shown on two or more lines 2 12 SILVACO International Extract Routines The following examples assume to be extracting values from the current simulation running under DECKBUILD but saved standard structure files may be used directly with extract using the syntax below extract init infile filename Material Thickness Extract the thickness of the top first occurrence of Silicon Oxide for a 1D cutline taken where Y 0 1 Assume 2D structure a warning is then displayed if results cross boundaries set by max v and min v extract name tox thickness material Si0 2 mat occno 1 y val 0 1 min v 100 max v 500 oxide can be substituted for the material SiO 2 Junction Depth Extract the junction depth of the first junction occurrence in the top first occurrence of silicon for a 1D cutline taken where X 0 1 extract name j1 depth xj material Silicon mat occno 1 x val 0 1 junc occno 1 Surfa
7. Algorithms section of Appendix A extract name Tuning bf bf x val 0 5 bip tn0 1 0e 5 bip tp0 1 0e 3 bip an0 2 9e 31 bip ap0 0 98e 31 bip nsrhn 5 0e12 bip nsrhp 5 0e15 bip betan 2 1 bip betap 1 SILVACO International 2 33 PC Interactive Tools User s Manual The extract parameters represent the BJ T parameters given in Table 3 1 Table 2 1 BJT Parameters Parameter Description Units bf Ideal Maximum F orward Beta nf Forward current Emission Coefficient gpis Transport saturation current IS A cm2 ne Base E mitter Leakage Emission Coefficient ise Base E mitter Leakage Saturation Current A cm2 ge Base E mitter Zero Bias DE pletion Capacitance F cm2 vje Base E mitter built in potential V mje Base E mitter exponential factor rb Zero bias base resistance Ohms square rbm Minimum base resistance at high current Ohms square irb Current at half base resistance value A cm2 tf Ideal forward transit time 1 ft secs cc Base Collect zero bias depletion capacitance F cm2 vjc Base Collector built in potential V mjc Base Collector exponential factor ikf Corner of Forward Beta High current roll off A cm2 ikr Corner of Reverse Beta High current roll off A cm2 nr Reverse Current Emission Coefficient br Ideal Maximum Reverse Beta isc Base Collector Leakage Saturation Current A cm2 nc Base E mitter Leakage Emission Coefficient tr Ideal forward transit time secs
8. Vcb 0 V Vcb 0 3 Vcb_ final Vcb step 0 025 Veb 0 V Veb final and Vcb final depend on the particular BJ T structures usually about 1 1 5 high injection level For a p n p device all signs are changed SILVACO International 2 35
9. command creates a collector current against collector current divided by base current curve and calculate the intercepting collector current where Ic Ib is at a maximum value extract name Ic at Ic Ib Max x val from curve i collector i collector i base where y val max i collector i base Second Intercept Occurrence The following command creates a gate voltage against source photo current curve and calculates the second intercept of gate voltage for a source photo current of 2e 4 extract name 2nd Vg at Isp 2e 4 x val from curve v gate elect source photo current where y val 2e 4 and val occno 2 Gradient at Axis Intercept This statement create a probe I time against drain current curve and find the gradient at the point where probe Itime is at a maximum extract name grad_at_maxTime grad from curve probe Itime i drain where y val max probe Itime Axis Manipulation with Constants The following command creates a gate voltage divided by ten against total gate capacitance multiplied by five Add and subtract also available extract name Vg 10 5 C gg curve curve v gate 10 5 c gate gate X Axis Interception of Line Created by Maxslope Operator The following command calculates the X axis intercept for the maximum slope of a drain current against gate voltage curve extract name Xint for IdVg xintercept maxslope curve i drain v gate Y Axis Interception of Line Created by Min
10. lt mode gt Z imaginary parameter robe lt probe name gt Atlas probe values lect lt parameter gt Value for specified electrical parameter lt parameter gt time Light frequency freq frequency 2 10 SILVACO International Extract Routines temp temperatur current gain unilateral power gain frequency max transducer power gain luminescent power luminescent wavelength optical source frequency available photo current source photo current optical wavelength position xhole mobility Time step magnitude Time step number Total integration time Cutoff frequency Distance along line Norm Intensity Integrated e Conc Integrated h Conc Channel Sheet Conductance Photon Energy Photon Density Gain Spontaneous emission rate electron mobility hole current generation rate lattice temp electric field recombination rate displacement current electron conc hole conc rlectron temp hole temp relative permitivity potential da value lt CURVE_NUMBER gt lt DA_FILE_AXIS gt da value lt DA_FILE_AXIS gt T Note lt CURVE_NUMBER gt s to specify which curve when multiple curves are present in a DA format file lt IMPURITY gt boron antimony arsenic phosphorus net OR impurity lt QST
11. one upper must be used extract start material Silicon mat occno l bias 0 0 bias step 0 25 bias stop 5 0 x val 0 1 region occno 1 extract done name Junc cap vs bias curve bias ldjunc cap material Silicon mat occno 1 x val 0 1 region occno 1 junc occno 1 outfile XjV dat Extract the minimum junction capacitance on the created junction capacitance against bias curve The second region in the top first layer of silicon is ramped from 0 to 3V and the capacitance of the second junction occurrence lower is measured Device temperature is set for calculations to be 325 Kelvin The resultant curve is output to the file XjVmin dat while the extracted minimum value is logged to the default results file results final extract start material Silicon mat occno l1 bias 0 0 bias step 0 25 bias stop 3 0 x val 0 1 region occno 2 extract done name Junc cap vs bias min curve bias 1ldjunc cap material Silicon mat occno 1 x val 0 1 region occno 2 junc occno 2 SILVACO International 2 17 PC Interactive Tools User s Manual temp val 325 outfile XjVmin dat Note The junction occurrence is only valid for the specified region i e there is only a maximum of two possible junctions for the specified region Junction Breakdown Curve Extract a curve of electron ionization integral against bias where the first region in the top first layer of silicon is ramped from O to 5V and device temperature is set to be 325 Kelvin T
12. only intermediate calculations and are not required to be included in the results worksheet the hide flag can be used This prevents unrequired extract results from cluttering the worksheet data The min max extract ranges if defined are examined If any extracted value is out of range then children of that deck fragment any part of the worksheet that uses the simulation results of that deck fragment are automatically de queued and marked with a parent error The fragment is marked with a range error The purpose here is that the system does not waste its time by running any simulation beyond that point in the input deck where the range error occurred for all parts of the split tree that use the particular values of the deck 2 32 SILVACO International Extract Routines QUICKBIP Bipolar Extract QUICKBIP is a 1D simulator for bipolar junction transistors BJ T and is fully integrated inside the DECKBUILD environment It is accessed via the Extract command and is available for use with any Silvaco simulator The doping profile passed to the QUICKBIP solver should be a bipolar profile At least three regions must exist The top region in the first silicon layer is taken to be the emitter There may be other materials on top of the silicon QUICKBIP may be used with either ATHENA 2 D process simulation or SSUPREM3 1 D process simulation It is used in cases where a 1 D device simulation is both easier and faster to turn around a
13. result Examples of the QUICKBIP extract command language are listed as follows extract name bip test bf bf extract name bip test nf nf extract name bip test is gpis extract name bip test ne ne extract name bip test ise ise extract name bip test cje cje extract name bip test vje vje extract name bip test mje mje extract name bip test rb rb extract name bip test rbm rbm extract name bip test irb irb extract name bip test tf tf extract name bip test cjc cjc extract name bip test vjc vic extract name bip test mjc mjc extract name bip test ikf ikf extract name bip test ikr ikr extract name bip test nr nr extract name bip test br br extract name bip test isc isc extract name bip test nc nc extract name bip test tr tr Any name may be assigned to each command In the case of a 2 D simulator the lateral position of the vertical profile has to be specified with the parameter x val n for example extract name forward transit time tf x val 0 3 Alternatively a boolean region may be specified when running in conjunction with the IC Layout interface for example extract name my test tf region pnp_active_poly In this case the bipolar test is performed only in the case where an IC layout cross section intersects the named region QUICKBIP tuning parameters can also be modified for using the syntax shown below A more detailed explanation is provided in the Models and
14. 0 max min concentration _ Figure 2 1 Process Extraction SILVACO International 2 1 PC Interactive Tools User s Manual Users may use this window to look at Material thickness measures the thickness of the nth occurrence of any material or all materials in the structure J unction depth measures the depth of any junction occurrence in the nth occurrence of any material Surface concentration measures the surface concentration of any dopant or net dopant in the nth occurrence of any material QUICKMOS 1D Vt calculates the one dimensional threshold voltage of a MOS cross section using the built in QUICKMOS 1D device simulator The gate voltage range defaults between 0 to 5 Volts but can be specified as required the substrate can also be fixed at any bias Qss and device temperature values may also be specified QUICKMOS CV curve creates a CV curve of a MOS cross section using QUICKMOS Shows capacitance as a function of either gate voltage or substrate voltage with the other terminal held at any fixed bias Qss and device temperature values may also be specified QUICKBIP 1D solver measures any of 22 BJ T Gummel Poon parameters plus any forward or reverse lV curve See the QUICKBIP subsection for more information and examples J unction capacitance versus bias calculates the junction capacitance of a specified p n junction within any region as a function of applied bias to that region Qss and device temperature values may a
15. 1 extract cont interface occno 1 qss 4 0e10 extract done name Electrical conc curve depth n conc material Silicon mat occno 1l x val 0 1 temp val 325 outfile extract dat ED Tree Optolith Creates a Data format file plotting a single branch of an ED tree for deviation of 10 from the datum the specified critical dimension CD value of 0 5 The x step defines the defocus step to be used 0 08 representing 8 of the total X axis range for each calculation For each value of defocus at the specified critical dimension deviation the value of dose is interpolated Hence the resulting curve is dose against defocus for a critical dimension of 0 5 plus 10 extract name ed 10 edcurve da value DEFOCUS da value CDs da value DOSE dev 10 datum 0 5 x step 0 08 outf ed10 dat Note If no x step is specified the actual curve defocus points are used Elapsed time The timer is reset to 10 seconds a timestamp extracted before and then after a simulation The elapsed time is then calculated by subtraction extract name reset_clock clock time start time 10 extract name t1 clock time lt simulation gt extract name t2 clock time extract name elapsed_time t2 Stl Note This extraction does not measure CPU time 2 20 SILVACO International Extract Routines Device Extraction Device extraction always deals with a logfile that contains l V information produced by a device simul
16. Chapter 2 Extract Routines Overview DECKBuUILD has a built in extraction language that allows measurement of physical and electrical properties in a simulated device The result of all extract expressions is either a single value Such as Xj for process or Vt for device or a two dimensional curve such as concentration versus depth for process or gate voltage versus drain current for device Extract forms a function calculator that allows you to combine and manipulate values or entire curves quickly and easily You can create your own customized expressions or choose from a number of standard routines provided for the process and device simulators You can take one of the standard expressions and modify it as appropriate to suit your needs Extract also has variable substitution capability so that you can use the results of previous ExTRACT commands Extract has two built in 1D device simulators QUICKMOS and QUICKBIP for specialized cases of MOS and bipolar electrical measurement Both QUICKMOS and QUICKBIP run directly from the results of process simulation for fast easy and accurate device simulation Process Extraction DECKBUILD S process extraction window is shown below Figure 2 1 Deckbuild ATHENA Extract Extract Material thickness Name Material All Materials Material name Occurrence Min value Max value Results datafile Extract location Electrical concentration profite 1
17. Choose the extract routine you want by activating a choice on the Extract setting The popup changes size and display different items depending on which routine you choose Then enter or choose the desired information for each item on the popup An extract name is always be required Optionally enter the minimum or maximum desired cutoff values by checking Min value or Max value and entering a value By default all extract results are written toa file named results final but using the Results datafile field allows you to specify the results file for each individual extract statement Material and impurity names are selected using a Chooser Figure 2 3 If the required option is not present in the default setting select the User filter to search for other materials impurities The Hide Worksheet Result setting specifies that this extract should not be displayed in the VWF INTERACTIVE TooLs worksheet This prevents extracts used for calculation purposes only from cluttering the worksheet results Finally place the text caret at the desired point in the deck and click on the WRITE button The extract syntax is written to the deck Extracting a Curve Some of the process extraction statements create a two dimensional curve as a result rather than a single value For instance extract constructs a data set of concentration versus depth for the SIMS SRP and electrical quantities distributions The resulting 2 D curve can be used for measurement and
18. PR gt bias lt EXPR gt bias step lt EXPR gt bias stop lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt curve bias p ion n ion lt MATERIAL gt mat occno lt EXPR gt region occno lt EXPR gt junc occno lt EXPR gt temp val lt EXPR gt soi qss lt EXPR gt workfunc lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt lt TEST_SETUP gt lt MATERIAL gt mat occno lt EXPR gt region occno lt EXPR gt bias lt EXPR gt bias step lt EXPR gt bias stop lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt curve bias ldsheet res ldp sheet res ldn sheet res ldconduct 1ldp conduct 1dn conduct material silicon polysilicon region occno lt EXPR gt mat occno lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt workfunc lt EXPR gt soi semi poly incomplete temp val lt EXPR gt lt TEST_SETUP gt lt MATERIAL gt mat occno lt EXPR gt region occno lt EXPR gt bias lt EXPR gt bias step lt EXPR gt bias stop lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt OR interface occno lt EXPR gt qss lt EXPR curve bias p mobility efiel material sil no lt mat occ workfu lt T EST_SET bias lt y val lt U nc lt P gt lt MAT XPR gt EXPR gt x val lt n conc p conc licon pol
19. RING gt eg impurity electron conc Note See Deckbuild ATHENA Extract popup Impurity Chooser for list of impurity strings lt MATERIAL gt gas silicon oxide polysilicon aluminum nitride oxynitride gaas gold silver alsi photoresist tungsten titanium platinum tisix SILVACO International 2 11 PC Interactive Tools User s Manual wsix ptsix OR material lt QSTRING gt eg material algaas Note See Deckbuild ATHENA Extract popup Material Chooser for list of material strings lt QSTRING gt quoted string eg Silicon lt LINE gt returned value from maxslope or minslope lt EXPR gt number real or integer value Svariable S variable deckbuild set variable expr expr expr expr expr expr expr expr min lt AXIS gt returns min value of var over its range max lt AXIS gt returns max value of var over its range ave lt AXIS gt returns ave value of var over its range slope lt LINE gt returns a where y ax b yintercept lt LINE gt returns b where y ax b xintercept lt LINE gt returns b a where y ax b register expr sets register value register returns value of set register expr expr DEFAULTS For optional extract arguments which are specified the following default values apply material silicon impurity net doping x vall y val region x val 5 of device size from left hand side
20. XPR workfunc lt ERIAL gt mat occno lt EXPR gt junc occno lt EXPR gt URITY gt lt MATERIAL gt mat occno lt EXPR gt R gt bias step lt EXPR gt Stop lt EXPR gt vb lt EXPR gt PR gt region lt QSTRING gt EXPR gt soi temp val lt EXPR gt URITY gt lt MATERIAL gt mat occno lt EXPR gt on occno lt EXPR gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt URITY gt lt MATERIAL gt mat occno lt EXPR gt X max lt EXPR gt x min lt EXPR gt y max lt EXPR gt y min lt EXPR gt y max lt EXPR gt y min lt EXPR gt region lt QSTRING interpolate lt IMP x Va URITY gt lt MATERIAL gt X max lt EXPR gt x min lt EXPR gt y max lt EXPR gt y min lt EXPR gt lt EXPR gt y val lt EXPR gt lt MA X pos lt IMP x ma y max ERIAL gt mat occno lt EXPR gt ly pos x val lt EXPR gt y val lt EXPR gt lt MATERIAL gt zi URITY gt x step lt EXPR gt x lt EXPR gt x min lt EXPR gt y max lt EXPR gt y min lt EXPR gt lt EXPR gt y min lt EXPR gt region lt QSTRING SILVACO International 2 7 PC Interactive Tools User s Manual clock lt VALU time start time lt EXPR gt E_MULTI_LIN i gt
21. aginary value for specified H code real lt Mode gt real value for specified H code lt electrode gt lectron current lt electrode gt charge d lt electrode gt displacement current real lt electrode gt real current imag lt electrode gt imaginary current fn lt electrode gt fowler nordhiem current lectrode gt hot electron current hh lt electrode gt hot hole electron current fd lt electrode gt workfunction difference 1 lt electrode gt lumped resistance 1 lt electrode gt lumped capacitance 1 lt electrode gt lumped inductance ect node lt circuit node gt circuit bias cect node lt circuit node gt circuit current hoe lt layer gt Electron sheet resistance for layer hoh lt layer gt Hole sheet resistance for layer ho lt layer gt Total sheet resistance for layer layer lt layer gt Bias on layer m lt mode gt Photon density mode m lt mode gt Laser power per mirror mode m lt mode gt Gain mode cect real lt circuit node gt Real circuit bias cct imag lt circuit node gt Imaginary circuit bias ect real lt circuit node gt Real circuit current ect imag lt circuit node gt Imaginary circuit current bcd real lt mode gt ABCD real parameter bed imag lt mode gt ABCD imaginary parameter real lt mode gt Y real parameter imag lt mode gt Y imaginary parameter real lt mode gt Z real parameter imag
22. ator such as ATLAS and therefore deals almost exclusively in curves The following section show how to construct a curve or extract values on a curve for all possible devices F or the special case of MOS devices both ATLAS and SMINIMOS4 have popups with a number of pre defined MOS tests See MOS Device Tests Device extraction also deals with structure files which contain information saved by a device simulator i e ATLAS This information may be extracted by using the process extraction syntax style shown below The following extracts the total electric field for silicon in a 1 D cutline where x 0 5 for the loaded device structure file extract name test 2d max conc impurity E Field material Silicon x val 0 5 There are some differences between the syntax used by Extract and the syntax used by the ATLAS output command These differences are documented in Appendix B of this manual Extract allows the user to construct a curve using separate X and Y axes For each axis the user can choose the voltage or current on any electrode the capacitance or conductance between any two electrodes or the transient time for AC simulations The axes may be manipulated individually such as multiplication or division by a constant or axes may be combined in algebraic functions Note Note that the curve manipulation discussed is equally applicable to all curves whether the curve came from process or device simulation The only type specific
23. base collector Ave Operator with Curves The following command calculates the average value for a curve of drain current against gate drain conductance extract name Ggate drain Ave ave curve i drain g gate drain X Value Intercept for Specified Y The following command creates a frequency against drain current curve and calculate the intercepting frequency for a drain current of 1 5 e6 extract name Freq at Id 1 5e 6 x val from curve frequency i drain where y val 1 5e 6 Y Value Intercept for Specified X The following command creates a drain voltage against device temperature curve and calculates the intercepting temperature for a drain voltage of 5V extract name T at Vd 5 y val from curve v drain temperature wher x val 5 0 SILVACO International 2 25 PC Interactive Tools User s Manual Abs Operator with Axis The following command creates a curve of absolute gate voltage against absolute optical wavelength log loglO and sqrt also available extract name Vg optW curve curve abs v gate abs elect optical wavelength Min Operator with Axis Intercept The following command creates a transient time against gate drain capacitance curve and calculate the intercepting time where the capacitance is at its minimum value extract name t at Cgate drain Min x val from curve time c gate drain where y val min c gate drain Max Operator with Axis Intercept The following
24. butes log log10 abs sqrt X axis bounds Kasts start Zaxis eab n Store XZY datafile Filename extract dat Results datafile results final Hide worksheet result Extract location Y Region name Value Figure 2 4 ATHENA Extract Popup with SIMS Profile The following options are available X vs Y axis determines the x and y axes of the resulting profile curve The default which should always be used unless the user plans to customize the resulting extract expression is that the x axis is depth into the material and the y axis is the concentration Curve X axis bounds specifies whether to create the curve for the whole X axis or for only a required section If selected X axis value fields become active enter values in the same units as the resulting curve This is useful for extracting local maxima and minima X axis attributes and Y axis attributes allows the user to modify the data values on each axis independently To compute net concentration versus depth the user might select abs on the y axis concentration and select nothing on the x axis depth abs is always evaluated before taking the log or square root of the data SILVACO International 2 5 PC Interactive Tools User s Manual Curve X axis bounds specifies whether to create the curve for the whole X axis or for only a required section If selected X axis value fields become act
25. ce Concentration Extract the surface concentration net doping for the top first occurrence of silicon for a 1D cutline taken for an X value corresponding to the gate contact region for loaded MaskViews cutline data extract name surface conc surf conc impurity Net Doping material Silicon mat occno 1 region gate QUICKMOS 1D Vt Extract the 1D threshold voltage of a p type MOS cross section at x 0 1 using the built in QUICKMOS 1D device simulator This example uses a default gate bias setting of 0 5V for a 0 25V step with the substrate at OV and a default device temperature of 300 Kelvin Values of QSS and gate workfunction have also be specified extract name 1D Vt ldvt ptype qss lel0 workfunc 5 09 x val 0 1 This 1D Vt extraction will calculate the 1D threshold voltage of an n type MOS cross section at X 0 1 where a gate voltage range 0 5 20V has been specified while the substrate Vb is set at 0 2V The device temperature has been set to 350 Kelvin extract name 1D Vt 0 20v ldvt ntype bias 0 5 bias step 0 25 bias stop 20 0 vb 0 2 temp val 350 0 x val 0 1 SILVACO International 2 13 PC Interactive Tools User s Manual Sheet Resistance and Sheet Conductance Note For sheet conductance extraction substitute sheet res with conduct i e conduct p conduct n conduct Extract the total sheet resistance of the first p n region in the top first occurrence of polysilicon for a cutline at X 0 1 Polysi
26. curve itself However the user still store the curve used during the calculation into an output file this is always the case extract name CV curve Max cap max curve bias ldcapacitance vg 0 0 vb 0 0 bias ramp vg bias step 0 25 bias stop 5 0 x val 0 1 temp val 325 outfile cv dat To find what the capacitance was at voltage 4 3 volts use the following syntax extract name MOS capacitance at Vg 4 3 y val from curve bias ldcapacitance vg 0 0 vb 0 0 bias ramp vg bias step 0 25 bias stop 5 0 x val 0 1 temp val 325 where x val 4 3 The general form of this syntax is extract y val from curve xaxis yaxis where x val number_on_xaxis and extract x val from curve xaxis yaxis where y val number_on_yaxis where xaxis and yaxis will determine the actual curve The syntax for this example was created by using the popup to write the syntax for the CV curve and then adding the y val where x val syntax in the input deck For more examples on how to manipulate curves see the examples in the Device Extraction section Junction Capacitance Curve Extract a curve of junction capacitance against bias where the first region in the top first layer of silicon is ramped from 0 to 5V Capacitance of the first junction occurrence upper is measured and the resultant curve is output to the file xjv dat Device temperature is default 300 Kelvin If only one junction exists for the selected region then a junction occurrence of
27. e datafile filename syntax Use the file to compare the results from a large number of runs For example if using DECKBUILD S built in optimizer the file gives a concise listing of all the results as a function of the input parameters The extract results file is created in the current working directory Units Material thickness angstroms J unction depth microns Impurity concentrations impurity units typically atoms cm3 J unction capacitance F arads cm2 QUICMOS capacitance F arads cm2 QUICKMOS 1D Vt Volts QUICKBIP 1D solver see the QUICKBIP section Sheet resistance Ohm square Sheet conductance square Ohm Electrode voltage Volts Electrode internal voltage Volts Electrode current Amps Capacitance F arads micron Conductance 1 Ohms Transient time Seconds Frequency Hertz Temperature Kelvin Luminescent power Watts micron Luminescent wavelength Microns Available photo current Amps micron Source photo current Amps micron Optical wavelength Microns Optical source frequency H ertz Current gain dB Unilateral power gain frequency dB Max transducer power gain dB The user can perform whatever unit shifting is required by adding the appropriate constants in the device extract tests and saving them as the default if desired The units are always printed out along with the extract results for built in single value extract routines Custom extract routines do not show units 2 30 SILVACO Inte
28. e occno l qss 1 0e10 extract done name P type SR p sheet res material Silicon mat occno 1 x val 0 1 region occno 1 Note This is an example of the multi line start continue done type of statement used to specify layer biases and Qss values It is recommended that the user always let the Extract popup write this particular syntax The Qss value also specifies the material interface occurrence involved counting from the top down There can be any number of additional continue lines to specify the biases on other layers and the Qss values of other interfaces the last line done does the actual extraction 1D Max Min Concentration Extract the peak concentration of net doping within the first p n region of the top first layer of silicon for a 1D cutline at x 0 1 extract name Max 1d Net conc max conc impurity Net Doping material Silicon mat occno 1 x val 0 1 region occno 1 Extract the peak concentration of phosphorus within any p n regions default for all materials using a 1D cutline at x 0 1 extract name Max 1d phos conc max conc impurity Phosphorus material All x val 0 1 Extract the minimum concentration of boron within any p n regions of the top first layer of silicon for a 1D cutline at x 0 1 2 14 SILVACO International Extract Routines extract name Min 1d bor conc min conc impurity Boron material Silicon mat occno 1 x val 0 1 2D Max Min Concentration Extract the peak co
29. he resultant breakdown curve is output to the file Noreakdown dat Refer to Impact command section and Impact lonization physics section within the ATLAS manual for the Selberherr model used in calculation extract start material Silicon mat occno l1 bias 0 0 bias step 0 25 bias stop 5 0 x val 0 1 region occno 1 extract done name N Breakdown curve bias n ion material Silicon mat occno 1 x val 0 1 region occno 1 temp val 325 outfile Nbreakdown dat The following extraction creates a curve of hole ionization integral against bias and calculates the breakdown voltage corresponding to the point where the hole ionization integral intercepts 1 0 The second region in the top first layer of silicon is ramped from 0 to 20V and the device temperature is set to the default of 300 Kelvin The resultant breakdown curve is output to the file Poreakdown dat and the breakdown voltage is appended to the default results file results final extract start material Silicon mat occno 1 bias 0 0 bias step 0 50 bias stop 20 0 x val 0 1 region occno 2 extract done name P intercept x val from curve bias p ion material Silicon mat occno 1 x val 0 1 region occno 2 where y val 1 0 out file Pbreakdown dat Selberherr model parameters can be modified using the syntax shown below More details are provided in the Models and Algorithms section of Appendix A extract start material Silicon mat occno 1 bias 0 2 bias step 0 08 b
30. ias stop 5 0 x val 0 3 region occ 2 extract done name iiP curve bias p ion material Silicon mat occno 1 x val 0 3 region occno 2 egran 4 0e5 betap 1 0 betan 1 0 anl 7 03e5 an2 7 03e5 bnl 1 231le6 bn2 1 231e6 apl 6 71le5 ap2 1 582e6 bpl 1 693e6 bp2 1 693e6 outfile extract dat SIMS Curve Extract the concentration profile of net doping in the top first layer of silicon The output curve is placed into the file SIMS dat extract name SIMS curve depth impurity Net Doping material Silicon mat occno 1l x val 0 1 outfile SIMS dat SRP Curve Extract the SRP Spreading Resistance Profile in the top first silicon layer The output curve is placed into the file SRP dat extract name SRP curve depth srp materials Silicon mat occno 1 x val 0 1 2 18 SILVACO International Extract Routines outfile SRP dat The following command will calculate the SRP Spreading Resistance Profile in the top first silicon layer using a specified 100 etch steps of uniform size The output curve is placed into the file SRP100 dat extract name SRP100 curve depth srp material Silicon mat occno l1 n step 100 x val 0 5 outfile srp100 dat Note Where n step not specified the default is 50 etch steps of variable size dependent on the gradient of net concentration If n steps is set uniform etch steps are used Sheet Resistance Conductance Bias Curves Extract the Total sheet conductance against bias curve
31. in current plotted against and X axis of gate bias extract name dydx deriv v gate i drain outfile dydx dat It is also possible to calculate dydx to the nth derivative as below extract name dydx2 deriv v gate i drain 2 out file dydx2 dat To find local maxima and minima on a curve the section of the curve X axis can be limited The following statement extracts the maximum drain current where gate bias is between the limits of 0 5 volts and 2 5 volts extract name lLimit max curve v gate i drain x min 0 5 X max 2 5 outf limit dat In addition there are several operators which apply to curve axes They are abs axis log axis log10 axis sqrt axis atan axis axis For instance extract curve abs i drain abs v gate The operators may be combined i e loglO abs axis These operators work on curve axes from process simulation as well 2 22 SILVACO International Extract Routines Curve Manipulation A number of curve manipulation primitives exist min curve ave curve max curve minslope curve maxslope curve slope line xintercept line yintercept line area from curve area from curve where x min Xl and x max X2 x val from curve where y val k y val from curve where x val k x val from curve where y val k and val occno n y val from curve where x val k and val occno n grad from curve where y val k grad from curve where x val k
32. ions extract name Icb max max i collector i base SILVACO International 2 23 PC Interactive Tools User s Manual The user can also find the Y value on a curve for a given X value and the other way round For example to find the collector current Y for base voltage 2 3 X use extract name Ic Vb 2 3 y val from curve abs v base abs i collector where x val 2 3 ExTRACT uses linear interpolation if necessary If more than one point on the curve matches the condition the first one is taken unless the following syntax is used to specify the occurrence of the condition This example would find the second Y point on the curve matching an X value of 2 3 extract name Ic Vb 2 3 y val from curve abs v base abs i collector where x val 2 3 and val occno 2 The condition used for finding an intercept can be a value or an expression and therefore use the min max and ave operators The following command creates a transient time against drain gate capacitance curve and calculate the intercepting time where the capacitance is at its minimum value extract name t at Cdrain gate Min x val from curve time c drain gate where y val min c drain gate In addition to finding intercept points on curves it is possible to calculate the gradient at the intercept specified by either a Y or X value as shown below extract name slope_at_x grad from curve v gate i drai
33. ive enter values in the same units as the resulting curve This is useful for extracting local maxima and minima Store X Y datafile stores an output file in TonyPLot data format if set to Yes The user can plot the data file in TonyPLot using the da option and can also read the data file directly into the Optimizer worksheet as a target if desired Compute curve area is checked to compute the area under the curve When checked it causes several other items to become active Area X axis bounds tells Extract whether to integrate the area under the curve along its entire length or just for a bounded portion of the X axis If Bounded is selected then X axis start and X axis stop become active Enter start and stop values in the same units as the resulting curve To construct the 2 D curve set each item on the popup in turn then click on WRITE Depth is always computed as distance from the top of the selected material layer and occurrence Depth starts from 0 and increases through the material 2 6 SILVACO International Extract Routines Customized Extract Statements In addition to the simple curve primitives shown on the popup the user can edit the input deck directly to make customized curves Examples include extracting maxima and minima on the curve combining axes via a function definition looking at slopes of tangent lines intercepts of sloped lines etc The Extract syntax is described below followed by examples of p
34. licon is treated as a metal by default but is flagged here as a semiconductor semi poly The default device temperature of 300 Kelvin and no layer biases will be used and the incomplete ionization flag is also set for carrier freezeout calculations refer to Incomplete Ionization Of Impurities physics section within the ATLAS manual extract name Total SR sheet res material Polysilicon mat occno 1 x val 0 1 region occno 1 semi poly incomplete Extract the n type sheet resistance of the second p n region in the top first occurrence of silicon for a cutline at X 0 1 where the second region is held at 4 0V and the device temperature is set to 325 Kelvin These commands use the start cont done syntax to create a multi line statement as described in the Extract features section extract start material Silicon mat occno 1 region occno 2 bias 4 0 x val 0 1 extract done name N type SR n sheet res material Silicon mat occno 1 temp val 325 x val 0 1 region occno 2 The following multi line statement extracts the p type sheet resistance of the first p n region in the top first occurrence of silicon for a cutline at x 0 1 where the first region is held at 5 0V the second region is held at 1 0V and the first interface Qss value equal to 1e10 extract start material Silicon mat occno l region occno 1 bias 5 0 x val 0 1 extract cont material Silicon mat occno 1 region occno 2 bias 1 0 x val 0 1 extract cont interfac
35. lso be specified J unction breakdown curve calculates the electron or hole ionization integral of any region as a function of applied bias to that region This calculation uses the Selberherr impact ionization model refer to Impact command section and Impact Ionization physics section within the ATLAS manual The Selberherr model default values may be modified if required plus Qss and device temperature values may be specified SIMS profile calculates the concentration profile of a dopant in a material layer SRP profile calculates the SRP Spreading Resistance Profile in a silicon layer Sheet resistance and sheet conductance calculates the sheet resistance or conductance of any p n region in any layer in an arbitrary structure The bias of any region in any layer the Qss of any material interface and the device temperature may be specified A flag for carrier freezeout calculations may also be set refer to Incomplete Ionization Of Impurities physics section within the ATLAS manual Sheet resistance and sheet conductance versus bias calculates the sheet resistance or conductance of one or more regions as a function of applied bias to any region Qss and device temperature values may also be specified Electrical concentration profiles Measures electrical distributions versus depth The bias of any region in any layer and the Qss of any material interface may also be specified The device temperature may also be set to the re
36. m concentration across a device e ED tree creates one branch of a Smile plot or ED tree from multiple Defocus distance against Critical Dimension CD plots created for a sweep of Dose values by OpPTOLITH These plots are all written in a single Data format file Elapsed time extracts time stamps from a specified start time at any point in a simulation the start time may be reset as required Note This extraction is not CPU time The built in 1D Poisson device simulator is used to calculate sheet resistance and conductance and the electrical concentration profiles With the exception of 2D extractions all the process extraction routines are available from both 1D and 2D process simulators In the case of the 2D simulators a cross section x or y value or region name used in conjunction with MaskViEws determines the 1D section to use Note An error will be returned for attempted extractions on 3D structure files Entering a Process Extraction Statement To place an extract statement in your process deck activate the Extract menu item on the Commands menu The Extraction popup appears The popup for ATHENA is shown in Figure 2 2 SILVACO International 2 3 PC Interactive Tools User s Manual Deckbuild ATHENA Extract Extract Material thickness Name Material Silicon All Materials Occurrence Min value Max value Results datafile results final Figure 2 2 The ATHENA Extraction Popup
37. n where x val 1 5 extract name slope_at_y grad from curve v gate i drain where y val 0 001 It is also possible to find the area under a specified curve for either the whole curve or as below between X limits extract name iv area area from curve v gate c drain gate where x min 2 and x max 5 2 24 SILVACO International Extract Routines General Curve Examples The following examples assume that they are extracting values from the currently loaded logfile running under DecKBuILD but saved IV log files maybe used directly with extract using the syntax below extract init infile filename Note Extract commands maybe entered on multiple lines using a backslash character for continuation but the syntax shown below should be entered on a single line although shown on two or more lines Curve Creation The following command extracts a curve of collector current against base voltage and places the output in icvb dat extract name IcVb curve curve i collector v base outfile icvb dat Min Operator with Curves The following command calculates the minimum value for a curve of drain current against internal gate voltage extract name Vgint Min min curve i drain vint gate Max Operator with Curves The following command calculates the maximum value for a curve of base voltage against base collector capacitance extract name Cbase coll Max max curve v base c
38. n concentration in the first occurrence of silicon material for a cutline of X 1 squared against depth fixed extract name nconc 2 curve depth n conc material Silicon mat occno l x val 1 n conc material Silicon mat occno 1 x val 1 outfile nconc dat BJT Example As a final example for device extraction consider finding say the beta value for a BJ T device at 1 10th the current for max beta This example sums up the information presented so far and also introduces the feature of variable substitution First the user needs to figure out what the current at max beta is Max beta was presented in a previous example extract name max beta max curve i collector i collector i base After this statement has been run extract remembers the extract name max beta and the resulting value Use this information later on using variable substitution In this example the user needs to get the current or X axis value at max beta so that the user can figure out what 1 10th of it is To do this use the extracted max beta as our Y axis target value SILVACO International 2 27 PC Interactive Tools User s Manual extract name Ic max beta x val from curve i collector i collector i base where y val S max beta Finally extract the value of Ic I b for c max beta 10 extract name Ic Ib for Ic Ic max beta 10 y val from curve i collector i collector i base where x val S Ic ma
39. name Total_max_pot max conc file impurity potential x step 0 1 material Silicon outfile totalconc dat Creates a Data format file plotting the position of the maximum potential in any material for the specified box limits A maximum potential Y position is found for every X step of 0 2 microns extract name limit_max_pot max conc file impurity potential x step 0 2 outfile limitconc dat x min 0 x max 7 y min 0 y max 0 09 Note The x step does not refer to cutlines but to the number of X coordinates used A value of 1 representing stepping 1 micron in X for every max Y value calculated 2 16 SILVACO International Extract Routines QUICKMOS CV Curve Extract a MOS CV curve ramping the gate from 0 to 5 volts with O volts on the backside and the device temperature set at 325 Kelvin default 300 K This example creates a curve that is stored in file cv dat and can be shown using TonyPLot To bring up TonyPLoT on this file an easy way is to highlight the file name and then click on DECKBUILD s Tools button TonyPLot starts and is loaded with the file automatically extract name CV curve curve bias ldcapacitance vg 0 0 vb 0 0 bias ramp vg bias step 0 25 bias stop 5 0 x val 0 1 temp val 325 outfile cv dat To get the maximum capacitance for the same curve insert the keyword max by editing the syntax created by the popup Notice that in this example a single value is being extracted from a curve not the
40. ncentration of net doping for the entire 2D structure extract name Max 2D net conc 2d max conc impurity Net Doping material All Extract the peak concentration of boron within the silicon material in the 2D box limits defined extract name Max 2D bor conc 2d max conc impurity Boron material Silicon y min 0 1 y max 0 9 x min 0 2 x max 0 6 In addition to this statement the interpolate flag may be added When present this flag causes the extraction to perform interpolation at the edges of the specified bounding box for min max concentration and position Extract the minimum concentration of phosphorus for all materials within the 2D box limits These limits are defined by user defined y coordinates and x values corresponding to loaded MaskViEws cutline information for the specified electrode or region extract name Min 2D phos conc 2d min conc impurity Phosphorus material All region gate y min 0 1 y max 0 9 The following multi line extract command measures the minimum concentration of antimony for the entire 2D structure and return the x y coordinates of the extracted concentration extract name Min 2D ant conc 2d min conc impurity Antimony material All extract name Min 2D ant conc X position x pos extract name Min 2D ant conc Y position y pos Note The x y position syntax must directly follow the 2D concentration extraction same as start continue done syntax it is advisable to use the Ext
41. of the first p n region in the top first occurrence of polysilicon Polysilicon is treated as a metal by default but is flagged here as a semiconductor semi poly The device temperature is set to 325 Kelvin default 300 K elvin and a bias ramped from 0 to 5V on the same polysilicon region extract start material Polysilicon mat occno 1 bias 0 0 bias step 0 00 bias stop 5 0 x val 0 1 region occno 1 extract done name Total SC curve bias 1ldconduct material Polysilicon mat occno 1 temp val 325 x val 0 1 region occno 1 semi poly outfile totalSC dat Extract the n type sheet conductance against bias curve of the first p n region in the top first occurrence of silicon where a bias ramped from OV to 5V on the same silicon region and a value of QSS 4 0e10 is specified for the first interface occurrence extract start material Silicon mat occno l region occno 1 bias 0 0 bias step 0 00 bias stop 5 0 x val 0 1 extract cont interface occno 1 qss 4 0e10 extract done name N type SC curve bias 1ldn conduct material Silicon mat occno 1 x val 0 1 region occno 1 outfile NtypeScC dat Extract the p type sheet conductance against bias curve of the first p n region in the top first occurrence of silicon where a bias ramped from 0 to 5V on the same silicon region and a bias of 2V is held on the first region of the top occurrence of polysilicon A value of QSS 5 0e10 is also specified for the first interface occurrence e
42. quired value The following distributions are calculated electrons holes electron quasi fermi level hole quasi fermi level intrinsic concentration potential electron mobility hole mobility electric field conductivity 2 2 SILVACO International Extract Routines 1D maximum minimum concentration measures the peak or minimum concentration of any dopant or net dopant for a specified 1D cutline in the nth occurrence of any material or all materials and also within any junction defined 2D maximum minimum concentration measures the peak or minimum concentration of any dopant or net dopant for the whole 2D structure or within a specified area in any material or all materials and also within any junction defined The actual xy coordinates of the maximum or minimum concentration may also be retrieved 2D material region boundary returns the maximum or minimum boundary of the selected material region for either X or Y axis Hence the outer boundaries of any material region can be extracted e 2D concentration area integrates specified concentration of any dopant or net dopant for whole 2d structure or within a specified location e 2D maximum concentration file CCD creates a Data Format file with the XY coordinates and the actual values of the maximum concentrations stepping across the structure This file may be loaded into TonyPLot when in ccd mode to show a line of maximu
43. ract popup to create these statements 2D Concentration File The output file contains data of the format x y c where c is the value of concentration at the coordinates xy The following example extracts the boron concentration in Silicon for the whole structure extract 2d conc file material silicon impurity boron outfile conc dat 1D Material Region Boundary Extracting the maximum Y boundary upper side location of the first occurrence of silicon material for a 1d cutline taken at X 2 extract name max_y max bound material silicon x val 2 mat occno 1 Extracting the minimum X boundary left side location of the second occurrence of polysilicon material for a 1d cutline at Y 3 extract name min_x min bound material polysilicon y val 3 mat occno 2 2D Material Region Boundary Extracting the minimum X boundary left side location of the photoresist material region at XY coordinates 7 6 1 2 SILVACO International 2 15 PC Interactive Tools User s Manual extract name minx min bound x pos material photoresist x val 7 6 y val L2 Extracting the maximum Y boundary upper side location of the photoresist material region at XY coordinates 5 2 0 extract name maxy max bound y pos material photoresist x val 5 2 y val 0 2D Material Region Boundary Extracting the minimum X boundary left side location of the photoresist material region at XY coordinates 7 6 1 2 extract name min
44. rnational Extract Routines Extract Features Extract Name Extract statements should almost always be given names The name must be prepended to the remainder of the extract statement F or example extract name gateox thickness oxide thickness x val 1 0 The extract name is used in three ways The name appears on the Optimizer worksheet when the extract statement is entered as a target on the VWF worksheet as an extracted parameter and can also be used in further extract statements to perform variable substitution The name can contain spaces Variable Substitution The extract parser maintains a list of variables each of which consists of a name and a value A name is defined by any previous named extract statement The corresponding value is the result of the statement To refer to a variable s value precede it with a Quotes are optional around variable references except when the variable name contains spaces in which case the must precede the quotes The substituted variable acts as a floating point number and can be used in any extract expression that uses numerical arguments For example extract name xj1l xj silicon junc occno 1 extract name xj2 xj silicon junc occno 2 extract name deltaXj abs xjl xj2 Examples with spaces extract name max boron max conc boron extract name max arsenic max conc arsenic extract name PN ratio max boron max arsenic Variable substitu
45. rocess extraction see the examples listed under device extraction for more information Extract Syntax General Syntax extract init infile lt QSTRING gt extract lt VALUE _TYPE gt lt CURVE_TYPE gt name lt QSTRING gt out file lt QSTRING gt lt OQSTRING gt datafile hide min val lt EXPR gt max val lt EXPR gt extract start EST_SETUP 1 gt extract cont EST_SETUP N gt extract done lt VALUE _MUTLI_LINE gt lt CURVE_MUTLI_LINE gt name lt QSTRING gt out file lt QSTRING gt datafile lt QSTRING gt hide min val lt EXPR gt max Description lt VALUE_TYP lt VALUE_SINGL i gt lt VALUE_SINGLE_LINE gt lt VALUE_MULTI_LINE val lt EXPR gt v E_LINE gt thickness xj surf conc ldvt max conc min conc 2d max conc 2d min conc X pos y pos 2d conc file max bound min bound 1D max bound min bound 2d area 2D lt MA y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt ERIAL gt mat occno lt EXPR gt lt MAT lt IMP bias lt IMP regi lt IMP y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt y val lt EXPR gt x val lt EXPR gt region lt QSTRING gt ntype ptype bias lt EXP y val lt EXPR gt x val lt EXE qss lt E
46. s log10 of all points along axis es square root of all points along axis es arc tan of all points along axis culates derivative of all points along axis eturns min y val for curve eturns max y val for curve eturns average value for curve yintercept maxslope minslope CURVE_DEF Determines th pt or returns the slope of the line DEF where x min lt EXPR gt and x max lt EXPR gt Determines area under specified curved between x limits corresponding to values of min and max expressions x val y val the from CURV from CURV X Y coord equal to the c interpolation is used between points on the curve grad from CURVE gradient at th Y X value is equal to the consent expression Linear interpolation is used FE DEF where y val lt EXPR gt and val occno lt XPR gt E DEF where x val lt EXPR gt and val occno lt EXPR gt Determines inate on the curve where the corresponding Y X value is onstant expression for the occurence specified Linear B Ki between points lt CURV E DEF gt lt C _DEF where x val lt EXPR gt y val lt EXPR gt Determines th e first X Y coordinate on the curve where the corresponding on the curve URVE_SINGLE_LINE gt lt CURVE_MULTI_LINE gt 2 8 SILVACO International Extract Routines
47. slope Operator The following command calculates the Y axis intercept for the minimum slope of a substrate current against drain voltage extract name Yint for IsVd yintercept minslope curve i substrate v drain 2 26 SILVACO International Extract Routines Axis Manipulation Combined with Max and Abs Operators The following command calculates the maximum value of drain gate resistance extract name Rdrain gate Max max 1 0 abs g drain gate Axis Manipulation Combined with Y Value Intercept The following command creates a gate voltage against drain gate resistance and calculates the intercepting drain gate resistance for a gate voltage of OV extract name Rdrain gate at Vg 0 y val from curve v gate 1 0 abs g drain gate where x val 0 0 Derivative The statement below creates the curve of dydx gate bias and drain current plotted against and X axis of gate bias extract name dydx deriv v gate i drain out file dydx dat This further example calculates to the 2nd derivative extract name dydx2 deriv v gate i drain 2 outfile dydx2 dat Data Format File Extract with X Limits The following command finds the local maximum in Data Format file for the curve of vin between 2 and 5 volts against power extract name max 2 5 max curve da value vin da value power x min 2 x max 5 outf max2 5 dat Impurity Transform against Depth This statement calculates the electro
48. syntax relates to the curve axes i e gate voltage can t be extracted from a process simulator etc If this is attempted a warning message is printed The Curve The basic element is always the curve Once the curve is constructed it can be used as is by saving it to a file for use by TonyPLoT or aS an Optimizer target or it can be used as the basis for further extraction For details on the Extract curve syntax see the Extract Syntax Description section earlier in this chapter To construct a curve representing voltage on electrode emitter1 on the X axis versus current on electrode base2 write extract name iv curve v emitterl i base2 The first variable specified inside the parentheses becomes the X axis of the curve the second variable becomes the Y axis The v name and i name syntax is used for any electrode name just insert the proper name of the electrode The electrode name must have been defined previously such as in the device deck or previous to that in an ATHENA input deck using the electrode statement or interactively in DEvEpIT Electrode names may contain spaces but must always be quoted Transient time is represented by keyword time extract name It curve curve time i anode For Device temperature curves use extract name VdT curve v drain temperature For extracting a frequency curve use extract name Idf curve i drain frequency To ex
49. testing and also as a target on the Optimizer worksheet so that you can optimize against 2 D curves EXTRACT provides several additional options to 2 D curve support axis layout axis attributes optional computation of area under the curve and optional outfile These options are the same no matter what type of curve for instance QUICKMOS CV and SIMS profile the user is extracting The ATHENA Extract popup showing the SIMS Profile is shown in Figure 2 4 2 4 SILVACO International Extract Routines ond Deckbuild SSUPREM4 Extraction Extract 7 SIMS Profile Name Material Silicon Occurrence 4 1 Impurity Net Chem X vs Y axis Depth vs Concentration Concentration vs Depth X axis attributes log log10 abs sqrt Y axis attributes log10 abs sqrt Store X Y datafile Filename extract dat Compute curve area X axis haunds Unt x axis stark dessescnsenseveenconeerneorenen X axis step Min val Max value Extract location EIv Region name value Figure 2 3 Material Chooser Popup Deckbuild ATHENA Extract Extract SIMS profile Name Material Silicon All Materials Material name Occurrence 1 TE 10 Impurity Net Doping Impurity X vs Y axis Depth vs Concentration Concentration vs Depth Compute curve area X axis attributes log log10 abs sqrt Y axis attri
50. tion in extract can also be used with the set command as shown below set cutline 0 5 extract name gateox thickness oxide thickness x val Scutline In addition filenames to be loaded can also be specified this way for example set efile structure str extract init infile efile Note Single quotes can be used to substitute where variable must appear within double quotes Min and Max Cutoff Values Statements may contain min val value and or max val value to define a valid range for extracted results single valued results only not curves If either max or min is not defined then the range extends from infinity to the stated value respectively If the extracted value is outside the range then an error message is printed along with the extracted results and also appended to the default results file SILVACO International 2 31 PC Interactive Tools User s Manual Multi Line Extract Statements Extract statements may be spread over multiple lines to specify layer biases and QSS values as shown in above examples This involves using the start cont done syntax Extraction and the Database VWF When run with the VIRTUAL WAFER Fas all extract values in the deck appear as output result columns on the split worksheet Each row of the worksheet contains the input parameters used to create the results The extracted value cell values are filled in automatically as the split points complete If some extracts are
51. tract a capacitance or conductance curve use this syntax SILVACO International 2 21 PC Interactive Tools User s Manual extract name cv curve c electrodel electrode2 v electrode3 and extract name gv curve g electrodel electrode2 v electrode3 For other electrical parameters refer to Extract Syntax section for valid electrical parameters use the following syntax extract name IdT curve elect parameter v drain An extract name is given in each example Although not strictly required it is always a good idea to name extract statements so they can be identified later Names are always necessary for entering an extract statement in DECcKBUILD s OPTIMIZER and for recognition by the VWF It is also possible to shift or manipulate curve axes Each axis is manipulated separately The simplest form of axis manipulation is algebra with a constant extract name big iv curve v gate 50 10 i drain Any constant expression can be multiplied divided added or subtracted to each axis Curve axis may also be combined algebraically similar to TonyPLot s function capability extract name combine curve i collector i collector i base All electrode values current voltage capacitance conductance may be combined in any form this way Another curve type is deriv used to return the derivative dydx For example statement below will create the curve of dydx gate bias and dra
52. x min bound x pos material photoresist x val 7 6 y val 1 2 Extracting the maximum Y boundary upper side location of the photoresist material region at XY coordinates 5 2 0 extract name maxy max bound y pos material photoresist x val 5 2 y val 0 2D Concentration Area Integrates the Boron concentration within the specified box limits using a cutline step of 0 05 microns extract name limit_area 2d area impurity Boron x step 0 05 x min 0 01 y min 0 23 x max 0 6 y max 0 45 In addition to this statement the interpolate flag may be added When present this flag causes the extraction to perform interpolation at the edges of the specified bounding box for min max concentration and position Integrates the Phosphorus concentration for the whole 2D structure using a cutline step of 0 03 microns extract name device_area 2d area impurity Phosphorus x step 0 03 Note The x step refers to the number of 1d cutlines used to obtain the 2d area For a device with an X axis of 7 microns an x step of 1 would result in 8 cutlines being used at 1 micron intervals 2D Maximum Concentration File Creates a Data format file plotting the position of the maximum potential in silicon material only for the whole 2D structure A maximum potential Y position is found for every X step of 0 1 microns These Data format files may be loaded into TonyPLot ccd to represent a line of maximum concentration across a device extract
53. x beta 10 For more information about variable substitution see Extract F eatures 2 28 SILVACO International Extract Routines MOS Device Tests A list of ready made MOS extract statements is also provided Use them directly or make modifications to suit testing needs DEcK BUILD allows the user to modify and store away the tests and to create new ones The MOS tests are e Vt e Beta e Theta e Leakage e Bvds e dsmax e SubVt e submax Vg lsubmax To access the list of MOS extract routines e ATLAS Choose Extracts on the Commands menu and then select Device and the ATLAS Extraction popup appears Choose the desired test and click on the WRITE button to insert the test into the input deck Using the User defined option custom extracts can be entered into the popup and saved as defaults The extract syntax is written to the deck automatically along with the selected tests when the Write Deck button on the Control popup is clicked on Figure 2 5 oH Deckbuild SMINIMOS4 Extraction VO Extract expression extract name vt xintercept maxslope curvelabstvg abstidyy abstvd 2 0 Figure 2 5 The ATLAS Extraction Vt Popup SILVACO International 2 29 PC Interactive Tools User s Manual Extracted Results Extracted results appear both with the simulator output in the tty subwindow and in a special file named by default results final The file name can be user defined using th
54. xtract start material Silicon mat occno 1 region occno 1 bias 0 0 bias step 0 00 bias stop 5 0 x val 0 1 extract cont material Polysilicon mat occno l1 bias 2 0 x val 0 1 region occno 1 extract cont interface occno l qss 5 0e10 extract done name P type SC curve bias 1ldp conduct material Silicon mat occno l x val 0 1 region occno 1 outfile PtypeSC dat The command below extracts the p type sheet conductance against bias curve of the first and second p n regions in the top first layer of silicon where a bias is ramped from 1V to 2V on the top first polysilicon layer extract start material Polysilicon mat occno 1 bias 1 0 bias step 0 05 bias stop 2 0 x val 0 01 extract done name regionl 2 curve bias ldp conduct material Silicon mat occno 1 x val 0 01 region occno 1 region stop 2 outfile regionl 2 dat SILVACO International 2 19 PC Interactive Tools User s Manual Note For sheet resistance extraction substitute ldconduct with ldsheet res i e ldsheet res ldnsheetres ldpsheet res Electrical Concentration Curve Extract the electron distribution against depth for the top first layer of silicon where a bias is ramped from 0 to 5V for the first region of the silicon and a QSS of 4 0e10 set for the first interface occurrence Device temperature is set at 325 Kelvin extract start material Silicon mat occno l region occno 1 bias 0 0 bias step 0 00 bias stop 5 0 x val 0

Chapter 2: Extract Routines

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