ELECTRUM AV
Contents
1. Reset ndervoltage Protection Transistor gate control voz 100010004 Rot 3 3 Outputs description is shown in Table 1 Figure 2 Functional driver circuit Table 1 Driver output description Outputs Symbol Output description X11 Vs Driver supply X1 2 AGND Ground driver supply X13 Vs Driver supply X1 4 AGND Ground driver supply X1 5 Vs Driver supply X1 6 AGND Ground driver supply X1 7 DGND Ground driver control X1 8 DGND Ground driver control X1 9 ERROR Error signal output X1 10 Not used X1 11 Not used X1 12 DGND Ground driver control X1 13 DGND Ground driver control X1 14 DGND Ground driver control X1 15 IN_1 TOP Power transistor control input of top arm X1 16 IN_2 BOT Power transistor control input of lower arm X1 17 Not used X1 18 DGND Ground driver control X1 19 DGND Ground driver control X1 20 DGND Ground driver control Output for emitter connection of top arm controlled transistor E 1 TOP E_1 TOP oe for collector drain connection of lower arm controlled transis G_1 TOP G_1 TOP Driver output for gate connection of top arm controlled transistor C 1 TOP C_1 TOP Output for collector drain connection of top arm controlled t2. ELECTRUM AV DR2160 BI doc www electrum av com IGBT AND MOSFET TRANSISTORS DRIVER DR2160P B1 USER S MANUAL 5 Naugorskoe highway Orel 302020 Russia Tel 7 4862 44 03 44 Fax 7 4862 47 02 12 E mail mail electrum av com CONTENTS FOVERVIEW noei reoat a e A EEE Gade aa ad Waban a Ea A as didnt dndeuidees S a 3 2 DRIVER COMPOSITION iracas n a awe ween A R R E E E E E aecauee 3 3 FUNCTIONAL DRIVER FEATURES pennin iennn aa e i a a a a a ias 3 4 BASIC AND MAXIMUM PERMISSIBLE CHARACTERISTICS eeccceeesseneceesesseceeceeaeeeeesnseaeeseseaaaes 5 gt DRIVER OPER ATION ninnan a sinbuesteh cn RA ase euenas duel E E RE E ERA 6 DRIVER CONNECTION RECOMENDATIONS 8 INFORMATION ABOUT PRECIOUS METALS 9 SERVICE RECOMMENDATIONS 10 RELIABILITY SPECIFICATIONS This document is a user s manual with a description of characteristics of this product for which are warranted All the products in the production process pass a complete set of electrical tests which are performed twice once before encapsulation and then again after it Tests carried out by Electrum AV are exhaustive and include 100 control at the final testing Any such warranty is provided only in accordance with the terms of the supply agreement supply contract or other documents in accordance with applicable law The information presented in this document does not provide warranties and liability of Electrum AV by the use of such information and the
3. suitability of products for your equipment The data contained in this document are intended exclusively for technically trained staff You and your technical expert will have to evaluate the suitability of the product for the application and the completeness of the product data in connection with this application Any products of Electrum AV are not permitted for the use in devices and life support systems and special equipment without the prior written consent of Electrum AV If you need information about the product which is not shown in this user s manual or which concerns the specific application of our product please contact the sales office to the manager who is responsible for your enterprise Engineers Electrum AV have a lot of experience in the design manufacture and application of powerful force devices and smart drivers and has already implemented a large number of individual decisions If you need power modules and drivers that are not included in the package as well as products with differences from the standard devices in specifications or design please contact to our managers and specialists who will offer you best solution for your application ELECTRUM AV RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE IN THIS DOCUMENT TO IMPROVE THE RELIABILITY FUNCTIONALITY AND DESIGN IMPROVEMENT 1 OVERVIEW Powerful transistors half bridge driver with field control MOSFET or IGBT hereinafter driver is in tended fo
4. al G signal on con trolled transistor gate 8 INFORMATION ABOUT PRECIOUS METALS Precious metals are not contained 9 SERVICE RECOMMENDATIONS 9 1 Tolerance requirements at mechanical impacts Mechanical impacts for drivers in accordance with qualifying standards of controlled power transistors are shown in Table 3 Table 3 Drivers tolerance requirements to mechanical impact factors External exposure factor Sinusoidal vibration frequency range Hz 0 5 100 acceleration amplitude m s g 150 15 Mechanical shock of single action peak shock acceleration m s g pulse duration of shock acceleration ms 40 4 50 9 2 Tolerance requirements at climatic impacts Climatic impacts in accordance with qualifying standards of controlled power transistors are shown in Table 4 10 Table 4 Tolerance requirements to climatic impact factors Lower ambient temperature operating C minus 45 maximum C minus 60 Higher ambient temperature operating C 85 maximum C 100 Relative humidity with temperature 35 C without moisture condensation max 98 Ambient temperature change C from minus 60 to 100 Lower atmospheric pressure Pa mm Hg 86000 650 Higher atmospheric pressure Pa mm Hg 106000 800 10 RELIABILITY SPECIFICATIONS The manufacturer guarantees the quality of the module all the requirements of the user s manual if the consumer observes te
5. e changing on dU dt o kV us 20 output Service and storage characteristics Operating temperature range Ta C 45 85 Storing temperature Ts AC 60 100 Controlled transistor characteristics Maximum permissible voltage of controlled transistor Uce Ups M aie 5 DRIVER OPERATION Delivery of log 1 on controlling input IN_1 TOP or IN_2 BOT will lead to opening of con Th trolled transistor Open state voltage fall increasing by more than qms per time exceeding tprocki will lead to protection operation of open state voltage fall increasing when current overload When emergency the tran sistor will be opened connected in accordance with the circuit with open collector output Error that is pulled up by means of resistor 5 1 kQ to internal source 5 V In 70 ms emergency reset will be performed by internal circuit of emergency reset and on rising edge of control signal IN the controlled transistor will be opened In the event when the emergency cause was not disposed then the protection cycle will be recurred Driver supply voltage decrease to protection operation threshold level against driver supply under voltage Unyio will lead to closing of controlled transistor regardless of input control signals Control signals will recover on protection operation threshold against driver supply undervoltage Uuvio There is not an error signal on output Error when protection opera
6. l corresponding Uuyio but error signaling in this case will not follow In the event of simultaneous signal de livery that corresponds to log 1 to outputs IN1 and IN2 the signaling will not follow too though output transistors will be closed Vs driver supply output You must note that on decreasing of driver supply voltage DC DC conver ter output voltage is also decreased Thereby if supply is less than the allowable level then the input circuit can operate faultlessly but on gates of controllable transistors the voltage can drop to level Uuvio and transistor control will be faulty Maximum no load current consumption on supply input is not more than 200 mA When transistors connection the current consumption will increase by amount of gate recharge current and it can reach 750 mA equal load for both channels At higher current consumption DC DC converter can fail or when short time exceeding of current consumption by 750 mA output voltage of DC DC converter will decrease to unallowa ble level and under voltage protection will operate that will lead to faulty transistor control In the event of non uniformly distributed load the current consumption of one channel should not exceed 300mA without con trol circuit consumption Current consumption depends on controlling pulse ratio gate input capacity and on gate resistors value see Figures 4 5 Thereby when driver service you must make correction for cu
7. r dependent galvanic isolated control of two powerful transistors with maximum permissible voltage up to 1700 V The driver is meant for half bridge control type Semix It is a device identical in design to Board 3S Skyper 32 pro The driver is an amplifier former of transistors gate control signals with frequency up to 50 kHz 2 DRIVER COMPOSITION 2 1 The driver a circuit plate with installed a driver module DM performed in hermetic plastic hous ing necessary tuning elements and connectors for connection of controlled transistor and control signals Connector type X1 IDC 20MS 2 2 Driver contains the following functional parts 1 2 NN BW Supply voltage stabilizer of driver with protection against abnormal turn on polarity Build in DC DC converter with stabilization of enabling and blocking voltage level on controlled transistors gates Input logics Control circuit of controlled transistors gate Protection circuit against under voltage of driver supply Protection circuit against current overload of controlled transistors voltage drop of open state con trolled transistor Temperature protection circuit 3 FUNCTIONAL DRIVER FEATURES 3 1 The driver provides the following driving controlling and protecting functions of controlled transistor 1 2 3 NNN AB 8 9 Saturation voltage control on controlled transistor collector its protective turn off when saturation state output Threshold regulation of p
8. ransistor E X BOT E 2X BOT N for emitter source connection of lower arm controlled transis G_2 BOT G 2 BOT Driver output for gate connection of lower arm controlled transistor T1 Tl Connection output of temperature sensor T2 T2 Connection output of temperature sensor GND GND Ground of temperature protection 4 BASIC AND MAXIMUM PERMISSIBLE CHARACTERISTICS Table 2 Basic and maximum permissible characteristics at T 25 C Characteristic Symbol Unit Wale Note min type max DC DC block characteristics Supply rated voltage Us V 13 5 15 16 5 Maximum current consumption s mA 230 250 Aaea jaN d6 Power of built in supply source of output driver ee Poc pc f Por each pane Voltage monitor characteristics Turn off threshold Uvvio Vv 11 DC DC output Turn on threshold Uuvro V 12 DC DC output Control input characteristics High level input voltage Um V 9 15 16 8 Low level input voltage Un V 0 6 0 2 4 Input resistance Rin KQ 5 9 Thresho ld resistance of temperature Rt Q 520 protection sensor Protection Semix temperature TM C 105 Time characteristics Signal turn on delay time between input and output td on in out s 3 See Figure 11 Signal turn off delay time between input and output td off in out s 0 5 See Figure 11 Dead time between signals changes on first and second trp us 1 5 2 0 2 5 channels outp
9. rcuits and to of power supply When protection operation the driver operation block will occur and controlled transis tors will be closed to temperature decrease to permissible level There is low level signal on output Error when temperature protection operation It will be kept to protection turn off If thermal protection is not used then the outputs T1 and T2 should be short circuited between each other 7 GRAPHICS EXPLAINING DRIVER OPERATION 60 900 800 700 600 500 400 300 200 0 i 100 10 25 50 100 250 0 C nF 0 10 20 30 40 50 f kHz I mA Figure 5 Graph of driver current consumption versus Figure 6 Graph of current consumption versus signal no load control signal frequency frequency under load with gate resistor 5Q for gate capacities 10 nF 25 nF 50 nF 100 nF and 250 nF C nF Figure 7 Graph of rise fall time versus gate capacity with gate resistor 5 Q Figure 8 Graph of driver safe operation zone with gate resistor 5 Q 18 45 16 40 14 Ie 35 L 12 4 30 U V 5 4 o 25 90 1 6 4 44 15 4 24 10 0 54 200 350 500 750 0 H 100 300 500 700 I mA I mA Figure 9 Graph of transistor gate voltage versus current consumption Figure 10 Graph of driver housing temperature versus current consumption Figure 12 Diagram explaining driver time characteristics where IN input control sign
10. rms and conditions of storage mounting and operation as well as guidance on the application specified in the user s manual Operating warranty is 2 years from the acceptance date in the event of requalification from the date of the requalification Reliability probability of the driver for 25000 hours must be at least 0 95 Gamma percent life must be not less than 50000 hours by y 90 Gamma percent service life of the modules subject to cumulative operating time is not more than gamma percent life not less than10 years at y 90 Gamma percent storageability time of the modules at y 90 and storing 10 years 5 Naugorskoe highway Orel 302020 Russia Tel 7 4862 44 03 44 Fax 7 4862 47 02 12 E mail mail electrum av com 11
11. rotective turn off on saturation voltage Smooth driver junction from active state to inactive one when an emergency controlled transistor output from saturation mode Control block when an emergency Emergency signaling Driver supply voltage control built in comparator on DC DC converter output On time off time regulation of controlled transistor with resistors resistance change in output circuit Ron Roff Block of simultaneous turn on the upper and lower arm Switching delay of upper and lower arm 10 Temperature protection of controlled modules 3 1 Overall drawing is shown at Figure 1 driver functional circuit and turn on circuit are presented at Figure 2 x1 ERROR IN_1 TOP IN_2 BOT Veo Veco i D DM 66 Rtop off Rtop on Rbot on Rbotoff i On state voltage i fall protection reset Undervoltage i protection H Transistor Gate Control voi 10007 10007 On state voltage fall protection gt Input logic Reset 250 pA
12. rrent con sumption depending on transistors which the driver will operate on Driver safe operation zone depending on gate capacity and frequency is shown at Figure 8 C_1 TOP E_1 TOP collector connection outputs drain of controlled transistor The outputs are intended for voltage fall controlling saturation protection on the transistor Meanwhile the typical value of protection operation threshold is equal to 11 V if the external elements are not installed Protection operation threshold is regulated by the external elements Zener diodes and diodes voltage fall of Zener diodes and dio des at current 250 pA is deducted from maximum voltage 11 V For instance if you install two diodes with fall voltage 0 7 V at current 250 uA then the protection operation threshold will be equal to 11 2 0 7 9 6 V G_1 TOP G_2 BOT meant for gates connection of controlled transistors Gate resistors Ron1 Ron2 Roffl and Roff2 are necessary for decrease of maximum pulse current It is not recommended to install resistors with ratings less than 1 Q It is allowed to install the resistors with differ ent ratings for instance for increase of controlled transistor turn off continuance to decrease voltage amplitude of inductive kicks T1 T2 thermistor connection outputs Protection operation threshold is 520 Q typ hysteresis is not less than 10 Output T2 is connected to output Eltop it is not permitted to connect it to general ci
13. tion against supply undervoltage Simultaneous delivery of log 1 to outputs IN_1 TOP and IN_2 BOT will lead to control block and controlled transistors will be closed thereby error signaling on output Error does not arise Diagrams explaining driver operation is shown at Figures 3 and 4 Rst terocx 2 t gt ee E ___f en t Rst Periodical internal signal of emergency reset Figure 3 Functional diagram of driver operation when emergency N1 IN_2 Figure 4 Functional diagram of driver operation 6 DRIVER CONNECTION RECOMENDATIONS IN1_1 TOP IN_2 BOT controlling input Driver control is described in section Driver operation When delivering of controlling voltage you must note that the protective reverse diodes are installed on control inputs As a result if control voltage exceeds supply voltage by more than 0 6 V then current consumption on inputs will be increased and with considerable increase of supply voltage the driver can fail Error inverting output open collector that is pulled up by means of resistor 5 1 kQ to internal source 5 V emergency signaling Meanwhile log 0 will arise only when emergency caused by current overload of power transistor when decrease of driver supply voltage to Unyio level the transistors will be closed regardless of control input signals signals will be recovered when they reach the supply voltage leve
14. uts No load Maximum operating frequency fmax kHz 50 See section 6 and Figures 5 8 Block time of fall voltage control on t 8 controlled open state transistor Bein H Block time of controlled transistor after emergency tBLOcK2 ms 70 See Figure 3 Transistor smooth emergency sundown EMN toff us 2A See Figure 3 Turn on delay time of emergency iaa ie 2 signal Output characteristics High level output voltage In all range of Uon wa Ti a permissible loads Low level output voltage ee yv 75 P 4 In all range of permissible loads Maximum output pulse current Set by consumer Tomax A 16 16 see section 6 and Figure 6 Mean output current To mA 160 For each channel Output signal rise time tr ns 150 No load see sec Output signal fall time ig ie 150 a 6 and Figure Maximum current of status output e TA 20 Error Maximum voltage of status output a v 30 Error Residual voltage on signal output ace yv 0 0 3 AT ains k Error Threshold voltage on measure in Without additional puts C_1 TOP E_1 TOP causing Une V 11 elements emergency turn off Isolation characteristics Maximum current of status output Uae y 2000 Error Maximum voltage of status output ORS 8 P Ulsoan outT V 4000 DC 1 minute Residual voltage on signal output Urso our1 yv 2000 DC 1 minute Error OUT2 Critical rate of voltag
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