micromesh-heat tutorial 2003 ic
Contents
1. Group B Figure 2 Location of inverter clusters used as separate heat sources in the IC thermal model left and calculated temperature distribution when all heat source groups A D active right CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial CONDENSED TUTORIAL The following is a summary of the steps in this tutorial Detailed explanations of each step follows the summary This summary can be useful for users who are somewhat familiar with the software and the overall process of setting up and running an IC thermal simulation The summary shown below matches the detailed description which follows hence allowing the user to use the summary description below and detailed explanations for steps which may be unfamiliar to the user Importing Layout and Defining Technology 1 Import the IC CIF layout file IC_Heat cif with no technology file a Obtain layer names from CIF file in text editor Layer nwell CIF Layer CWN Layer polycontact CIF Layer CCP Layer nselect CIF Layer CSN Layer mlm2 contact CIF Layer CVA Layer pselect CIF Layer CSP Layer pad CIF Layer CMP Layer active CIF Layer CAA Layer metall CIF Layer CMF Layer active contact CIF Layer CCA Layer metal2 CIF Layer CMS Layer poly CIF Layer CPG Layer glass CIF Layer CFI b Obtain vertical dimensions and material composition Layer CFD Micromesh Thickness Vertical Coordinates t F 4 0 um a F 3 85 um MI2. Modules T Flow TITTET cereceancne J Heat Transfer Heat i ii il pH j li i il i I Turbulence Turb q pi f vE p i A oa lt I Chemistry Chem li uk i fidhid i au I User Scalar Scalar ae mney Ubu sue ou Set Lees Radiation Rad I Spray Free Surfaces VOF I Two Fluid Fluid2 Tl Cavitation Cav Scale User defined x fi Xm 0 0 0001 Yim 0 0 0001 Zim J Grid Deformation Deform Geometry Tree X Name Total volumes J Stress SI Simulation List Mi 3DIC_Heat T Plasma J 3DIC_Heat I Electric Electr J Magnetic Magnet T Kinetic I Semi Device 29 Setup steady simulation for the IC geometry e PT Problem Type gt Check the Heat Transfer Heat module e MO Model Options gt InShared panel verify that Transient Conditions is set to Steady e VC Volume Conditions gt Check the list of volumes in lower left window to make sure that all volumes have the VC Type Solid If for some reason this is not the case click Ctrl A to select all the Volumes In the Properties drop down list at right select Solid and click Apply 22 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial gt In upper right panel in the VC Setting Mode set the top pull down menu to Properties gt Select the Bulk_Silicon and Semi_Device volume names by clicking LB on them hold shift or ctrl key to select multiple names at o
3. click Accept gt Toadd anew HeatA layer click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW Oxide deposit In the list of layers click RB on the NEW Oxide deposit layer In the Layer Properties window which appears change the Material pull down selection to HeatA 11 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial click Accept gt To add anew HeatB layer click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW HeatA deposit In the list of layers click RB on the NEW HeatA deposit layer In the Layer Properties window which appears change the Material pull down selection to HeatB click Accept gt To add anew HeatC layer click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW HeatB deposit In the list of layers click RB on the NEW HeatB deposit layer In the Layer Properties window which appears change the Material pull down selection to HeatC click Accept gt To add anew HeatD layer click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW HeatC deposit In t
4. to 4 5 o click Accept closing the Layer Properties window Layout e Draw a layout top view of the Oxide layer by selecting the New Rectangle button E e Draw a rectangle with coordinates 0 um 0 um to 100 um 100 um e To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 0 Pos Y 0 Size X 100 Size Y 100 Edit Semi_Device layer Operation and vertical position e Click LB on the Semi_Device layer from the list of layers on the right hand side e Click RB onthe Semi_Device layer e In the Layer Properties window which appears o set the Operation pull down menu to insert o set the Position um to 0 7 o set the Thickness um to 0 05 o click Accept closing the Layer Properties window Layout e Draw a layout top view of the Semi_Device layer by selecting the New Rectangle button E e Draw a rectangle with coordinates 22 24 um 22 4 um to 85 92 um 64 um e To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 22 24 Pos Y 22 4 Size X 63 68 Size Y 41 6 Edit HeatA layer Operation and vertical position e Click LB on the HeatA layer from the list of layers on the right hand side e Click RB on the HeatA layer e In the Layer Properties window which appears o set the Operation pull down menu to insert o set the Position um to 0 75 o set the Thic
5. 2003 Integrated Circuit IC Thermal Analysis Tutorial io xl Largest Volume l 146500F 16 Smallest Angle 5 572010E 00 at face 249276 Location of face number 249276 18 H 8812E 05 y 6 3975E 05 z Problem converged to apecified criterion f 1 00E 04 in 21 iterations Hormal Termination Final Time Elapsed Time 2 120049E 02 Delta time 2 120049E 02 4 Post Processing Simulation Results 31 Visualize IC thermal simulation results This section shows how to use CFD VIEW to obtain color contours for temperature wall heat flux etc It also describes how to obtain line plots for temperature variations in a cross section For more details on how to use VIEW refer to the CFD VIEW User Manual e Click the Launch CFD VIEW button in the top toolbar of CFD GUI A new CFD VIEW window displaying the IC structure of IC_Heat DTF should open CFD VIEW may also be launched on it s own then Click the Import DTF or Plot 3D button L and open the file IC_Heat DTP e In CFD VIEW perform the following steps to obtain a temperature image as illustrated below gt Inthe image window use the LB MB and RB to rotate zoom and pan the image as desired gt Create Z Cut Temperature Plane o Select the Bulk_Silicon volume from the bottom right panel list of objects Click on the Z Cut button in the upper right panel of buttons Set the Z Cut location to 0 75e 6 in meters in the text field in the middle right panel
6. Click the Flooded On button along the top tool bar In the pull down Color menu select T temperature O O O O gt Create X Cut Temperature Plane o Select the Bulk_Silicon volume from the bottom right panel list of objects Click on the X Cut button in the upper right panel of buttons Set the X Cut location to 75 0e 6 in meters in the text field in the middle right panel Click the Flooded On button along the top tool bar In the pull down Color menu select T temperature O O O O gt Create Y Cut Temperature Plane o Select the Bulk_Silicon volume from the bottom right panel list of objects Click on the Y Cut button in the upper right panel of buttons Set the Y Cut location to 55 0e 6 in meters in the text field in the middle right panel Click the Flooded On button along the top tool bar In the pull down Color menu select T temperature O O O 25 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial gt Generate temperature legend o Select the Bulk_Silicon volume from the bottom right panel list of objects o Click on the Legend button in the upper right panel of buttons o You may edit the legend by RB clicking on the legend generated in the main window and selecting properties gt Optional Click the Perspective button along the top tool bar to visualize the geometry from a perspective point of view Flooded On Variable Selection X Y Z Cut Planes lt gt CFD IEW G Tutorials 2003 uMe
7. a technology file defined for this project thus answer No to the question In the Import CIF Project window select the file you want for this tutorial IC_Heat cif and click OK CFD Micromesh Layout untitled1 ump i mfe x File Edit view Compute Tools Window Help X oa s ra oc Oe mene RF CWN deposit prm CYA deposit a CSP deposit eae CSN deposit rd CPG deposit i SOum ig deposit CMF deposit 1 EN CCP deposit moea CCA deposit n l l CAA i Dum 50um 100um z i 3 F 100um CFD C CFD Micromesh A layout of the device appears in the Layout editing window shown above with the layer names coming from the original CIF file Typically the layers defined in a CIF file can not be used directly for automatic building of 3D computational models within CFD Micromesh Therefore a special technology file is needed for mapping the layers from a CIF file into physical layers and a special sequence of operations performed by CFD Micromesh needs to be defined A Micromesh Technology File with extension umt can be used for subsequent fast and automatic building of models from different layouts of the same technological process In this tutorial we will create such a technology file manually from information provided along with the CIF layout file In this IC case we have the following additional technology informat
8. 0 um verified with values be Pos X 87 7 Pos Y 0 0 Size X 12 3 Size Y 100 0 19 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial o coordinates 0 0 um 0 0 um to 100 0 um 22 0 um verified with values be Pos X 0 0 Pos Y 0 0 Size X 100 0 Size Y 22 0 o coordinates 0 0 um 65 0 um to 100 0 um 100 0 um verified with values be Pos X 0 0 Pos Y 65 0 Size X 100 0 Size Y 35 0 26 Build 3D unstructured computational grid e Select the Prism Hex Mesh button He from the top toolbar or from the top menu Compute gt Prism Hex Mesh e A Prisms Hexahedra Mesh window will open as below e Check the Old prisms hexahedra mesh before version 2002 circle e Set the field values as shown in the image below Prisms Hexahedra Mesh Generation Parameters Geometry and meshing algorithm Prisms hexahedra mesh with voxel based geometry Prisms hexahedra mesh with rectangular geometry e oan Giese a a Bacio Bands ahsae su Gadce s a aa Desired number of triangles per plane including air 25000 Initial cell size in 2 direction um 100000 Threshold in 2 direction urn Jee 006 Smoothness tolerance of boundary approximation fi approx maximum normal distance in voxels Add Z Mesh Mesh default split into hexahedra leave all prisms Copy BCs YEs and Simulation Data I Browse From the DTF File SDIC_Heat OTF Accept Cancel In this
9. ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial 18 19 20 o To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 22 56 Pos Y 44 0 Size X 20 0 Size Y 19 0 e Draw third rectangle by selecting the New Rectangle button E o Draw arectangle with coordinates 44 0 um 44 0 um to 64 0 um 63 0 um o To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 44 0 Pos Y 44 0 Size X 20 0 Size Y 19 0 e Draw fourth rectangle by selecting the New Rectangle button E o Draw a rectangle with coordinates 65 4 um 44 0 um to 85 4 um 63 0 um o To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 65 4 Pos Y 44 0 Size X 20 0 Size Y 19 0 Edit Active_Contact layer Operation and vertical position e Click LB on the Active_Contact layer from the list of layers on the right hand side e Click RB onthe Active_Contact layer e Inthe Layer Properties window which appears o set the Operation pull down menu to insert o set the Position um to 0 75 o set the Thickness um to 0 8 o click Accept closing the Layer Properties window Layout e The layout for this layer already exists though some clean up is of use Specifically there are elements of the contacts in the four corners of the model which are not needed e These elements may be delete
10. cursor on the screen appearing in the lower right corner of the main window Initially the units are set automatically according to the size of the imported file micrometers in this case but you can change them menu View gt Display Units On the right side of the main window examine all layers constituting your project Starting from the most bottom layer GDS_31 in this example keep clicking LB on subsequent higher layers to see them appearing sequentially in the layout Objects belonging to the selected layer are highlighted in the layout Note that by default only the layers below the currently active layer are displayed By clicking RB on the highlighted layer name in the right window you can view and or change properties of this layer The change will affect all the objects belonging to this layer By clicking LB on an element of layout of the highlighted layer left part of the window you can select the specific element in this layer then move it stretch copy delete etc By clicking RB on the selected element of layout you can view and or change properties of the particular element The change will affect only this object Explore the icon buttons at the top of main window and their description by hovering the mouse cursor without clicking for a while on each button A longer explanation of the button function appears also in the bottom left corner of the main window Convert CIF layer names into physical layer n
11. remaining layers into the correct sequence in the layer list For the remaining 4 layers active contact should be on the bottom with metall above then m1m above and finally metal2 on top The order currently is nearly correct with only the mlm2 layer needing to be lowered one position in the Layer List To rearrange e select mlm layer in the list 10 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial while holding LB drag the m1m2 layer name down so that it is between the metal2 and metal layers then releasing the LB The four layers should now be arranged correctly Generate Missing Process Layers If you compare the current layer now with Figure 3 you notice that there are several process layers missing in the layout Bottom Bulk_Silicon Oxide HeatA HeatB HeatC HeatD Semi_Device To build a complete model we need to add manually those missing layers to our process description in CFD Micromesh gt Before adding the new layers though let us add the desired layer name materials to the material list This can be done by clicking the pull down menu Tools gt Edit Materials Since we want to create new layers with different names click the Add button in the Materials window In the New Material window type the name Bottom and click Accept Again click the Add button in the Materials window In the New Material window type the name Bulk_Silicon and click Accept Repeat t
12. side walls non planar conformal layers etc Viewing the 3D model allows for zooming and rotation Typical model building time 1 5 minutes 700 MHz Pentium PC e 3D Photo Generating a solid model by geometrical deposition etching simulation using voxel technology the same as in method 2 this technique allows to generate models of arbitrary shapes like rounded side walls non planar layers etc Visualization procedure uses the ray tracing technique that produces up to four different static views stored as GIF files of the generated 3D model Though these are only static 17 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial snapshots of the 3D model thanks to ray tracing they give the highest quality of rendering with controlled light shadows reflections and anti aliasing Typical model and pictures building time 3 10 minutes 700 MHz Pentium PC e ach of the above three methods is activated by a separate button in the top toolbar e Using the first option 3D Quick View We will use the 3D Quick View option since our model consists of rectangular sections only gt Click LB on 3D Quick View button Ro in the top toolbar or from top menu Compute gt Quick View A new window appears and it shows the quick view model similar to below Note that all that can be seen is the deposited Oxide and Bulk_Silicon The other layers are internal to the geometry and are not visible here gt
13. tutorial leave the Copy BCs VCs and Simulation Data box unchecked In the first run boundary conditions BCs volume conditions VCs and other simulation parameters have to be manually assigned in the DTF file through the Graphical User Interface GUI However if a change in the device structure or meshing scheme is desired at a later stage you may copy the simulation parameters including BCs VCs from an existing DTF file by checking the box and specifying the name of the source DTF file e Click Accept to build the 3D computational grid Before generation of the model the user is asked to save the project under a chosen name Answer Yes to the Save file now question The progress of the grid generation process is displayed in the Status window The message COMPUTATION COMPLETED appears at the bottom when the 3D mesh is ready and has been saved in a DTF file Note that the DTF file has exactly the same name as the Micromesh Project file we saved earlier microstrip DTF in this case e In the Status window just before the Computation Completed statement the number of grid cells generated is provided Specifically both prism and hex cell counts are given For this tutorial 145 000 prism and 41 000 hexa cells are generated hence 186 000 total computational cells for the geometry 20 CFD AC Viewing 27 Sele ware The o the CFD e selections that the e geometry Select Al
14. um O um to 100 um 100 um e To check if your Bottom layout has the correct dimensions click RB on the red highlighted rectangle that you have just drawn In the Rectangle Properties window check if position and dimensions of your 13 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial 11 12 13 14 rectangle are appropriate If not correct them by typing the accurate number Pos X 0 Pos Y 0 Size X 100 Size Y 100 and click Accept Edit Bulk_Silicon layer Operation and vertical position e Click LB on the Bulk_Silicon layer from the list of layers on the right hand side e Click RB on the Bulk_Silicon layer e Inthe Layer Properties window which appears o set the Operation pull down menu to deposit o set the Thickness um to 0 5 o click Accept Layout e Draw a layout top view of the Bulk_Silicon layer by selecting the New Rectangle button E Draw a rectangle with coordinates 0 um O um to 100 um 100 um e To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 0 Pos Y 0 Size X 100 Size Y 100 Edit Oxide layer Operation and vertical position e Click LB on the Oxide layer from the list of layers on the right hand side e Click RB on the Oxide layer e In the Layer Properties window which appears o set the Operation pull down menu to deposit o set the Thickness um
15. 6 Removal of Unnecessary Process Layers The layout information imported from the CIF layout file contains much detailed information that is not going to be used in this simulation Specifically information regarding the manufacturing of the semiconductor devices For the simulation a single block layer will be used to represent the silicon semiconductor device layer instead of the multiple layers present in the CIF file This single layer will be added later therefore we may now remove these unnecessary layers from the layout The layers which may be removed from the layout include active poly contact poly nselect pselect and nwell e To remove a layer click LB on the layer name displayed in the Layer List Next click on the Delete Layer button has The layer has now been deleted e Delete the 6 layers as listed above active poly contact poly nselect pselect and nwell Ordering of Remaining Process Layers Model building operations in CFD Micromesh are performed in the order in which they are displayed in the Layer List on the right hand side of the main window The layer displayed at the bottom of the list is inserted into the model first the others follow in order from the bottom to the top of the list This is similar to the layers that are processed deposited diffused etched etc one after another as in the microelectronics manufacturing process gt On the basis of Figure 3 vertical description rearrange the
16. CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial CFD ACE Version 2003 Miucromesh Heat Tutorial 10 03 Integrated Circuit IC Thermal Analysis e Building a 3D simulation model of an integrated circuit IC from a layout using CFD Micromesh e Setting up a Heat Transfer simulation in CFD ACE e Steady state simulation with surface heat sources e Post processing using CFD VIEW CFD Research Corporation Cummings Research Park 215 Wynn Drive Suite 501 Huntsville AL 35805 Phone 256 726 4800 Fax 256 726 4806 Software Support software cfdrce com Phone 256 726 4900 Sales sales cfdrc com www cfdrce com 2003 by CFD Research Corporation All rights reserved CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial Tutorial Integrated Circuit IC Thermal Analysis PAGE GENERAL INFORMATION Problem Description and Objectvies l l 3 CONDENSED TUTORIAL Importing Layout and Defining Technology 4 Set Model Gometry Dimensions and Grid Step 5 Generate Edit Process Sequence 5 Edit Layer Operation Vertical Position and Layout 5 Save Micromesh Project and Technology Files 5 Generating and Viewing 3D Solid Model 5 Automatic Generation of 3D Computational Mesh 5 Viewing the Generated 3D Computational Mesh DTF file 6 Setting Up A Thermal Simulation in CFD ACE 6 Post Processing Simulation Results 6 DETAILED TUTORIAL Importing Layout and Defining Technology l 7 Set Model G
17. Inthe 3D Quick View window use LB to rotate the model MB to zoom in and out the view and RB to shift pan the view Hover the cursor over different layers in the structure to see the layer name gt Scaling of the model if desired is available by clicking the Scale Solid button E in the top toolbar gt Close the 3D Quick View window e Viewing the internal structure i e interconnects metall metal2 vias heat sources etc This will be accomplished by making the Oxide and Bulk_Silicon layers non visible by temporarily turning off meshing of these layers Click LB on the Oxide layer name Click RB on Oxide layer In the Layer Properties window which opens click on Edit Material button In the Materials window which opens uncheck the Mesh It box for Oxide Click Close in the Materials window and click Accept in the Layer Properties window Click LB on the Bulk_Silicon layer name Click RB on Bulk_Silicon layer In the Layer Properties window which opens click on Edit Material button In the Materials window which opens uncheck the Mesh It box for Bulk_Silicon Click Close in the Materials window and click Accept in the Layer Properties window VVVVV VVVV WV gt Click LB on 3D Quick View button ho in the top toolbar or from top menu Compute gt Quick View A new window appears and it shows the quick view model similar to below Note that the deposited Oxide and Bulk_Silicon layers are no long
18. NG 4 4 2um Contact a 4 2 22um a 4 1 55 um 4 0 9 um 4 a A 0 75 um See 4 0 7 um Serucorductor Devices a 4 0 5um Bulk Silicon a 00um Bottom not meshed a 4 1 0um Motes Bottom layer not meshed created to generate DC along bottom of bulk silicon HeatA through Heatb layers are meshed but same material properties as Oxide created to generate BC s for surface heat sources red line Active Contact and MIMA Contact are interconnects between layers 2 Explore and understand CFD Micromesh environment 3 Convert CIF layer names into physical layer names using information from step la CWN gt Rename to nwell CSN gt Rename to nselect CSP gt Rename to pselect etc Note that physical layers pad and glass are not present in the layout CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial Set Model Gometry Dimensions and Grid Step 4 Set model geometry boundary dimensions min max voxel size um X 0 100 0 16 Y O 100 0 16 Z 1 5 0 01 5 Set size of grid step used in Micromesh for drawing layouts to 1 0 um Generate Edit Process Sequence 6 Removal of unnecessary process layers The following layers may be removed active poly contact poly nselect pselect and nwell 7 Ordering of remaining process layers For the remaining 4 layers active con
19. VIEW Setting Up A Thermal Simulation in CFD ACE 28 Open DTF file in CFD GUI 29 Setup steady simulation for the IC geometry PT Heat MO Steady VC Properties Bulk_Silicon Semi_Device gt Density 2300 Specific Heat 700 Therm Conductivity 155 Oxide HeatA HeatB HeatC HeatD gt Density 2150 Specific Heat 740 Therm Conductivity 1 3 Active_Contact Metall M1M2 Metal2 gt Density 2700 Specific Heat 938 Therm Conductivity 230 BC Bottom_Bulk_Silicon gt Isothermal 300K Semi_Device_HeatA gt Wall Heat Source at 39045 W m 2 Semi_Device_HeatB gt Wall Heat Source at 513865 W m 2 Semi_Device_HeatC gt Wall Heat Source at 477895 W m 2 Semi_Device_HeatD gt Wall Heat Source at 740131 6 W m 2 IC default SC Max Iterations 30 Enthalpy AMG Solver Enthalpy Relaxation 1E 13 OUT Static Temperature and Wall Heat Flux File gt Save saves file IC_Heat DTF 30 Run the IC thermal simulation Post Processing Simulation Results 31 Visualize IC thermal simulation results CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial DETAILED TUTORIAL In the following lesson these definitions apply LB Left mouse button MB Middle mouse button RB Right mouse button Importing Layout and Defining Technology 1 Import the IC CIF layout From the File pull down menu select Import gt CIF file A window appears with the question Do you want to select technology file At this point we don t yet have
20. ames using the technology information presented previously as obtained from the CIF file as viewed in a text editor Select by clicking LB the first layer at the bottom of the list in this case CAA Click RB on the selected layer name the Layer Properties dialog window opens Select Edit Material button the Materials dialog window opens Change the CIF material names into new physical names by clicking on Rename button in the Materials window For example CWN gt Rename to nwell CSN gt Rename to nselect CSP gt Rename to pselect etc Note that physical layers pad and glass are not present in the layout Click Close in the Materials window Click Accept in the Layer Properties window Set Model Geometry Dimensions and Grid Step 4 On the basis of the technology process description presented in Figure 3 vertical information we can now set up the project vertical boundaries at Zmin 1 0 um Zmax 5 0 um and a voxel size to 0 01 um At this time the X and Y range will also be adjusted slightly as shown in the image below From the toolbar click the Change Boundary button L The Dimensions and Resolutions dialog window opens Change the values of the fields to match the values shown below Note that voxel size is expressed in voxels or three dimensional blocks analogous to two dimensional pixels in 2D images The largest voxel size should be chose
21. appears o set the Operation pull down menu to insert o set the Position um to 0 75 o set the Thickness um to 0 15 o click Accept closing the Layer Properties window Layout e Draw a layout top view of the HeatC layer by selecting the New Rectangle button E e Draw arectangle with coordinates 44 0 um 23 36 um to 64 0 um 42 4 um e To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 44 0 Pos Y 23 36 Size X 20 0 Size Y 19 04 Edit HeatD layer Operation and vertical position e Click LB on the HeatD layer from the list of layers on the right hand side e Click RB onthe HeatD layer e Inthe Layer Properties window which appears o set the Operation pull down menu to insert o set the Position um to 0 75 o set the Thickness um to 0 15 o click Accept closing the Layer Properties window Layout e Draw a layout top view of the HeatD layer which includes four rectangles e Draw first rectangle by selecting the New Rectangle button E o Draw arectangle with coordinates 22 56 um 23 52 um to 42 56 um 42 52 um o To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 22 56 Pos Y 23 52 Size X 20 0 Size Y 19 0 e Draw second rectangle by selecting the New Rectangle button E o Draw a rectangle with coordinates 22 56 um 44 0 um to 42 56 um 63 0 um 15 CFD
22. ast and automatic building of models from different layouts of the same technological process create and view interactively a 3D model generate three dimensional 3D mesh setup and perform thermal simulation visualize thermal results of simulation As an example we use an IC device as illustrated in Figure 1 Heat sources present in the silicon device layer of the 3D model are modeled as 2D surface heat sources located exactly at the top surface of the silicon which corresponds to the location of CMOS transistor channels The heat sources are located in four groups inverter clusters as illustrated in Figure 2 Sample calculated temperature distributions are can also be seen in Figure 2 m aiin Sa i S oe His aal a5 0 ta Borer a ELIESA ma Deg Ska Sho nka cheg a cha cl mp Cha Elea ches Shey rhe ls Sira 0 pre uF a L aol od il a l a a a od li z i EP a 4 1 T E T 1 E a a 5 ase ee eee ee pee ere cee one one one ere grb a crc Ee Bag Aag Pag Py age Ga pae pai pai pai mE oe TE vee mi and md amh amk a mi E i m lal Figure 1 IC layout in CFD Micromesh left and a three dimensional solid model built automatically in CFD Micromesh right Group A 12 inverters 1 1 3uW 0 95uW inv Group B 4 inverters 45 4uW 11 35uW inv Group C 16 inverters 181 6uW 11 35uW inv Group D 64 inverters 1 125mW 56 89u W inv IU i j Group D Group Group A
23. ated with the same technological process In such a case click Yes in the Technology File window appearing during importing GDSII or CIF layout and select the saved Micromesh Technology File umt 23 At this point you may save your existing Micromesh project to a disk file to secure the work you have done so far Projects in CFD Micromesh are saved to disk in a special format containing all model data as well as setup parameters for the 3D model and mesh generation for the current project All these data are saved to a binary disk file with extension ump for uMesh Project e From the toolbar click Save il The Save Project As dialog opens e In File name type IC_Heat ump as the name of the file and click OK Generating and Viewing 3D Solid Model 24 There are three methods of generating and viewing a 3D model in CFD Micromesh e 3D Quick View Very fast building of a 3D model from planar elements of defined position and thickness and viewing the 3D model with zooming and rotation This option is limited to layouts including rectangular shapes only Non rectangular shapes will appear as rectangular in any 3D quick view representation Typical model building time 1 2 seconds 700 MHz Pentium PC e 3D Solid View Generating a solid model by geometrical deposition etching simulation using voxel volumetric pixel technology this technique allows to generate models of arbitrary shapes including rounded and oblique
24. d by highlighting them and hitting the delete button on your keyboard e To highlight these elements simply click LB near the elements and drag and hold the mouse to create a square enclosing the elements The highlighted elements will appear in red Simply hit delete to remove these elements Edit Metall layer Operation and vertical position e Click LB on the Metall layer from the list of layers on the right hand side e Click RB on the Metall layer e Inthe Layer Properties window which appears o set the Operation pull down menu to insert o set the Position um to 1 55 o set the Thickness um to 0 65 o click Accept closing the Layer Properties window Layout e The layout for this layer already exists though some clean up is of use Specifically there are elements of the contacts in the four corners of the model which are not needed e These elements may be deleted by highlighting them and hitting the delete button on your keyboard Edit M1M2 layer Operation and vertical position e Click LB on the M1M2 layer from the list of layers on the right hand side e Click RB on the M1M2 layer e Inthe Layer Properties window which appears o set the Operation pull down menu to insert o Set the Position um to 2 2 o set the Thickness um to 1 0 o click Accept closing the Layer Properties window Layout e The layout for this layer already exists though some clean up is of use Spec
25. de deposit F y y y i E active contact deposit ui EAEN HeatC deposit a Heatt deposit F HeatB deposit Heat deposit d Semi Device deposit iy Oxide deposit a Bulk Silicon deposit F Bulk Silicon deposit F Bottom deposit E mine deposit RNN metal deposit tl active conkact deposit T el ol n CFD Micromesh Croc CFD Micromesh crvbic Figure 4 Layer process order before left and after right re ordering Edit Layer Operation Vertical Position and Layout 10 Edit Bottom layer Operation and vertical position e Click LB on the Bottom layer from the list of layers on the right hand side e Click RB on the Bottom layer e In the Layer Properties window which appears o set the Operation pull down menu to deposit o set the Thickness um to 1 0 o click LB on the Edit Material button in the Materials window which appears un check the Mesh It box for the material Bottom hence this material will not be be meshed in the model click Close closing the Materials window o click Accept closing the Layer Properties window Layout e Draw a layout top view of the Bottom layer by selecting the New Rectangle button R from the toolbar or from the top menu Tools gt New Rectangle e While holding left mouse button down and observing the current cursor coordinates in the lower right corner draw a rectangle with coordinates 0
26. e_contact Interface Zone 1 SDIC_He HeatD_active_contact Interface Zone 1 3DIC_He active_contact_metall Interface Zone 1 3DIC_He 300 01 f T ta a a EAN em a A S ea Iterfoco Zoned DIC He m Color Mapping Cut Cut multi x Cut Color Map T Contours fio 2 Cut Cut multi Z Cut L d Annotation M N Maximize Sel Samples m j anal daha Esnal sba IAs Y Cut Cut multi Y Cut Maximize All Hi 300 11 Invert Advanced E pa psy 31 ns 26
27. er seen Now the remaining internal layers are visible 18 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial gt Close the 3D Quick View window gt Re check the Mesh It box for the Oxide and Bulk_Silicon layers layer and save the Micromesh Project file Automatic Generation of 3D Computational Mesh 25 Add layer to enable control of mesh cell size Add mesh cell size layer gt Click LB on the top most layer in the right side panel which should be metal2 click LB the New Layer amp button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW metal2 deposit In the list of layers click RB on the NEW metal2 deposit layer In the Layer Properties window which appears change the Operation pull down selection to mesh cells size In the Mesh Cells Size field enter 10 click Accept Add mesh cell size layer layout consisting of four rectangles surrounding the IC component layout Draw a layout top view of the mesh cell size layer by selecting the New Rectangle button E Draw a rectangle with coordinates 0 0 um 0 0 um to 20 6 um 100 0 um To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 0 0 Pos Y 0 0 Size X 20 6 Size Y 100 0 Repeat this process for the following three additional layout rectangles o coordinates 87 7 um 0 0 um to 100 0 um 100
28. he list of layers click RB on the NEW HeatC deposit layer In the Layer Properties window which appears change the Material pull down selection to HeatD click Accept gt To add anew Semi_Device layer click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW HeatD deposit In the list of layers click RB on the NEW HeatD deposit layer In the Layer Properties window which appears change the Material pull down selection to Semi_Device click Accept Ordering of Process Layers All the required process layers are now present in the layout but the newly added layers need to be moved to appropriate positions in the list Therefore based on Figure 3 the process layers should be reorganized Figure 4 illustrates the order of the layers before and after re ordering The left image illustrates the ordering before rearranging and the right image illustrates the final ordering required The final ordering should be as follows from bottom to top Bottom gt Bulk_Silicon gt Oxide gt Semi_Device gt HeatA gt HeatB gt HeatC gt HeatD gt Active_Contact gt Metall gt M1M2 gt Metal2 12 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial metal deposit a mine deposit i eT metali deposit HeatD deposit F Heatt deposit E Heath deposit Ej Heat deposit F Oxi
29. his process to add the remaining desired materials Oxide HeatA HeatB HeatC HeatD and Sem1_ Device Click Close in the Materials window gt To add a new Bottom layer click LB on the top Layer metal2 in the Layer List click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW metal2 deposit creating a new layer makes a copy of the currently active layer with all its properties In the list of layers click RB on the NEW metal2 deposit layer In the Layer Properties window which appears change the Material pull down selection to Bottom click Accept gt To add a new Bulk_Silicon layer click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW Bottom deposit In the list of layers click RB on the NEW Bottom deposit layer In the Layer Properties window which appears change the Material pull down selection to Bulk_Silicon click Accept gt Toaddanew Oxide layer click LB the New Layer button in the top toolbar In the list of layers on the right hand side you should see a new layer with the name NEW Bulk_Silicon deposit In the list of layers click RB on the NEW Bulk_Silicon deposit layer In the Layer Properties window which appears change the Material pull down selection to Oxide
30. ifically there are elements of the contacts in the four corners of the model which are not needed e These elements may be deleted by highlighting them and hitting the delete button on your keyboard 16 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial 21 Edit Metal2 layer Operation and vertical position e Click LB on the Metal2 layer from the list of layers on the right hand side e Click RB on the Metal2 layer e Inthe Layer Properties window which appears o set the Operation pull down menu to insert o Set the Position um to 3 2 o set the Thickness um to 0 65 o click Accept closing the Layer Properties window Layout e The layout for this layer already exists though some clean up is of use Specifically there are elements of the contacts in the four corners of the model which are not needed e These elements may be deleted by highlighting them and hitting the delete button on your keyboard Save Micromesh Project and Technology Files 22 Save your current settings as a Micromesh Technology File e Click File gt Save Technology from the top menu The Save Technology window opens up e In File name type IC_Heat umt as the name of the file and click OK Micromesh Technology File is saved with extension umt for uMesh Technology This file can be used later for fast and automatic building of 3D models and meshes from different layouts imported from GDSII or CIF files associ
31. ion available Layer names As was seen from the imported CIF file in Micromesh the coded CIF layer names available are non descriptive and of little use Knowledge of what each layer is in the process is required for proper model development Hence the coded CIF layer names need to be converted into physical layer names The easiest way to determine the layer name conversion information is to open the CIF file in a text editor Near the beginning of the file comments might be present mapping the layer names with the CIF layer names Whether this information is present or not depends on the layout tool used to generate the CIF file If this information is not available in the CIF file direct knowledge of the layer name mapping must be obtained from the CIF layout author CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial For this tutorial case the following information was present in the CIF file mapping the layer names as shown below Layer nwell CIF Layer CWN Layer nselect CIF Layer CSN Layer pselect CIF Layer CSP Layer active CIF Layer CAA Layer active contact CIF Layer CCA Layer poly CIF Layer CPG Layer polycontact CIF Layer CCP Layer mlm2 contact CIF Layer CVA Layer pad CIF Layer CMP Layer metall CIF Layer CMF Layer metal2 CIF Layer CMS Layer glass CIF Layer CFI Vertical Dimensions and Material Composition To build a 3D model from layout we need also an information about the dime
32. kness um to 0 15 14 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial 15 16 17 o click Accept closing the Layer Properties window Layout e Draw a layout top view of the HeatA layer by selecting the New Rectangle button E e Draw arectangle with coordinates 70 56 um 23 36 um to 85 76 um 42 4 um e To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 70 56 Pos Y 23 36 Size X 15 2 Size Y 19 04 Edit HeatB layer Operation and vertical position e Click LB on the HeatB layer from the list of layers on the right hand side e Click RB on the HeatB layer e In the Layer Properties window which appears o set the Operation pull down menu to insert o set the Position um to 0 75 o set the Thickness um to 0 15 o click Accept closing the Layer Properties window Layout e Draw a layout top view of the HeatB layer by selecting the New Rectangle button E e Draw a rectangle with coordinates 65 76 um 23 36 um to 70 4 um 42 4 um e To check dimensions click RB on the red highlighted rectangle correct values should be Pos X 65 76 Pos Y 23 36 Size X 4 64 Size Y 19 04 Edit HeatC layer Operation and vertical position e Click LB on the HeatC layer from the list of layers on the right hand side e Click RB on the HeatC layer e In the Layer Properties window which
33. l Interfaces y yh Zoomed Top Down View Rotate and Zoomed 3D View a Seals sree EEN SS eT LT Nee Vas V AT N IE re ACE ee ee a 21 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial Setting Up A Thermal Simulation in CFD ACE 28 Open CFD ACE GUI with the generated 3D computational mesh DTF file e Select the CFD GUI button eS from the toolbar in CFD Micromesh This button invokes the CFD ACE GUI program installed on your machine in the CFDRC package Within CFD ACE GUI you can apply boundary and volume conditions appropriate to your problem set up analysis parameters and start simulations Please refer to the CFD ACE U User Manual from CFDRC for all the details of operation of CFD ACE GUI e When started from Micromesh CFD ACE GUI should automatically open the DTF file you just created IC_Heat DTF If it does not open the DTF file automatically open the DTF file using the menu command File gt Open IC_Heat DTF The image below illustrates the IC_Heat DTF opened in CFD ACE GUI CFD ACE GUI G Tutorials 2003 uMesh_Tutorial_2003_Layout_Import working_files 3DIC_Heat DTF Oj x IZ File Edit View Models Tools Window Hep xil CAAC EE pT mo vc Bc ic sc out Run
34. lick Submit to Solver If any changes are made to the file after opening a new window will open up asking you whether you want to submit the simulation under the same name or a different name If you have made any changes click the Submit Job Under Current Name button Click View Residual If the values of the residuals eventually go down by 3 or more orders of magnitude it typically means the calculations converge properly as illustrated below Residual Plotter G Tutorials 2003 uMesh_Tutorial_ 2003 Layo Ioj x File Color a SS HL BB Nor 4 H0 ES 1 00e 003 1 00e 004 1 00e 005 1 00e 006 1 00e 007 1 ee Step fr of 1 E oo fC NOTE There is a colored dot in the upper right corner of the residual window This dot is an indicator of whether the simulation is running green or has stopped red Also you might have to wait for a few seconds after clicking the Submit button for the variable names and residual curves to appear in the window This is because variable initialization memory allocation and even the solution itself can sometimes take a while e g 3D cases with a large number of cells Click View Output The output file contains various information with regard to the simulation and the state of the simulation In addition the Elapsed Time value at the bottom of the Output file shows the CPU time for the completed simulation in seconds 24 CFD ACE
35. lue of 39045 W m 2 o Click Apply gt Select the Semi_Device_HeatB interface name o In the Heat panel at right Check the Wall Heat Source interface box Set the Wall Heat Source to a Constant value of 513865 W m 2 o Click Apply gt Select the Semi_Device_HeatC interface name o In the Heat panel at right Check the Wall Heat Source box Set the Wall Heat Source to a Constant value of 477895 W m 2 o Click Apply gt Select the Semi_Device_HeatD name o Inthe Heat panel at right Check the Wall Heat Source box Set the Wall Heat Source to a Constant value of 740131 6 W m 2 o Click Apply 23 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial 30 IC Initial Conditions gt Leave all parameters at their default values SC Solver Control gt In the Iter panel set Max Iterations to 30 gt gt In the Solvers panel change the Enthalpy pull down menu to AMG In the Relax panel set the Enthalpy value to 1E 13 Out Output Parameters gt gt Under the Print sub panel check the Heat Flux Summary Box Under the Graphic sub panel set the output variables you want to see in CFD VIEW You may turn off the variables that you do not need For example for this tutorial simulation you may turn on Static Temperature and Wall Heat Flux Save the simulation file from the top menu by File gt Save saves file IC_Heat DTF Run the IC thermal simulation gt From the Run panel C
36. n that can still capture the dimensions of the elements or smallest grid element you would like to have Hence noting the smallest element resolution in your geometry including any overlaping elements is key to allow for the largest voxel size but reduce the required memory allocation for grid generation For this tutorial voxel sizes of CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial 0 16 um for the X and Y direction are appropriate In the Z direction a voxel size of 0 1 um is chosen to allow for multiple grid cells in the smaller layers if desired smallest layer thickness is 0 5 um Dimensions and Resolutions X Y z Model Min urm lo lo Model Max um 100 100 E Voxel Size um 0 16 0 16 Jo 01 Accept Cancel Mouse Edit e Click the Accept button Change size of grid used in Micromesh for drawing layouts The size of grid step may be changed in Micromesh This grid is useful in snap to grid drawing of 2D layouts While the grid may not allow for the exact desired dimensions this smaller grid step will allow for near exact drawing of layouts By then editing the drawn layout element final exact location dimensions of the elements may be accomplished RB click on drawn element and edit e From the toolbar click the Change Grid button ney e The Grid dialog window opens Change the value of the field Grid Step um to 1 0 e Click the Accept button Generate Edit Process Sequence
37. nce o Click the Group button in the lower left corner to group these volumes together o In the Phys panel at right Set the Density to 2300 kg m 3 o Inthe Therm panel at right Set the Specific Heat to 700 J kg K Set the Thermal Conductivity to 155 W m K o Click Apply gt Select the volumes Oxide HeatA HeatB HeatC HeatD by clicking LB on them hold shift or ctrl key to select multiple names at once o Click the Group button in the lower left corner to group these volumes together o Inthe Phys panel at right Set the Density to 2150 kg m 3 o Inthe Therm panel at right Set the Specific Heat to 740 J kg K Set the Thermal Conductivity to 1 3 W m K o Click Apply gt Select the volumes Active_Contact Metall M1M2 Metal2 by clicking LB on them hold shift or ctrl key to select multiple names at once o Click the Group button in the lower left corner to group these volumes together o In the Phys panel at right Set the Density to 2700 kg m 3 o Inthe Therm panel at right Set the Specific Heat to 938 J kg K Set the Thermal Conductivity to 230 W m K o Click Apply e BC Boundary Conditions gt Select the Bottom_Bulk_Silicon wall name o In the Heat panel at right Set the Sub Type to Isothermal Set the Temperature to a Constant value of 300 K o Click Apply gt Select the Semi_Device_HeatA interface name o In the Heat panel at right Check the Wall Heat Source box Set the Wall Heat Source to a Constant va
38. nsion of the structure that is vertical dimensions of particular layers in the layout and their material composition This information must be obtained from some source For this IC case this information is illustrated in Figure 3 below cegrd Layer CFD Micromesh Thickness Vertical Coordinates t t 7 5 0 um a f 5 85 um MING a a 4 3 2 um trl Contact oer a f 1 55 um A 0 9 um 4 a 4 2 0 75 um memuconductor Devices SQ tm fe I Oxide 400 nra 4 0 5um Bulk silicon SOO tum a 4 0 0 um Bottom not meshed 1000 tum a 1 0um Motes Bottom layer not meshed created to generate BC along bottom of bulk silicon Heat through Heath layers are meshed but same material properties as xide created to generate BC s for surface heat sources red line Active Contact and MINT Contact are interconnects between layers Figure 3 Vertical dimensions of layers in the chip structure and their material composition CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial 2 If the user is unfamiliar with the Micromesh environment explore the layout editing window The mouse buttons work as in the other CFDRC software LB is used to select an object MB to zoom in and out the view RB to shift pan the view A context sensitive help is in the lower left corner of the main window Note also the current coordinates X Y of the
39. ometry Dimensions and Grid Step l l i 9 Generate Edit Process Sequence l l 10 Edit Layer Operation Vertical Position and Layout 13 Save Micromesh Project and Technology Files i l 17 Generating and Viewing 3D Solid Model l 17 Automatic Generation of 3D Computational Mesh l 19 Viewing the Generated 3D Computational Mesh DTF Ailey 21 Setting Up A Thermal Simulation in CFD ACE 22 Post Processing Simulation Results l l l i l 29 CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial PROBLEM DESCRIPTION AND OBJECTIVES Perform thermal analysis of integrated circuit IC starting from original electronic layout and process information Electronic integrated circuit IC designs are very often stored in the form of layout top view of all the layers composing the design Similar method is used to store and transfer designs of electronic printed circuit boards PCBs multi chip modules MCMs and micro electro mechanical systems MEMS To perform a physical simulation of such structures we need to create a 3D computational mesh from the layout using additional information about particular layer properties position thickness material The latter information is also called process data and may be stored as a technology file In this tutorial we show how to import a layout from a CIF file define the process data properties of layers and save as a Technology File which can be used for subsequent f
40. our corners 19 layer Metal insert position 1 55 0 65 thick remove rectangles present in four corners 20 layer M1M2 insert position 2 2 1 0 thick remove rectangles present in four corners 21 layer Metal2 insert position 3 2 0 65 thick remove rectangles present in four corners Save Micromesh Project and Technology Files 22 Save Micromesh Technology file File gt Save Technology IC_Heat umt 23 Save Micromesh project file File gt Save Project As IC_Heat ump Generating and Viewing 3D Solid Model 24 Viewing model with 3D quick view View entire structure or internal components by making layers Oxide and Bulk_Silicon non meshed Automatic Generation of 3D Computational Mesh 25 Add mesh cell size layer to process Set Mesh Cells Size to 10 Draw rectangles with coordinates 0 0 to 20 6 100 87 7 0 to 100 100 0 0 to 100 0 22 0 65 to 100 100 26 Build 3D Prism Hexa unstructured computational grid Select Old prisms hexahedra mesh before version 2002 and set to 25 000 triangles 1000000 initial z size cell 6E 6 Z direction threshold 1 smoothness CFD ACE 2003 Integrated Circuit IC Thermal Analysis Tutorial tolerance no Z mesh default mesh gt Results in 145 000 prism and 41 000 hexa cells are generated hence 186 000 total computational cells for the geometry Viewing the Generated 3D Computational Mesh DTF file 27 View 3D computational mesh in CFD
41. sh_Tutoriz _2003_Layout_J aport working_files 3DIC Heat TF stCaselimadl IQ xX mii Fie Edit View Arrange Tools Window o Zeep Egal xe e g a angalela 1 w OMS E OMMA EAA A coo f js kobor Aa Extra JOff A A jel sf TI Value 5E 005 Cut Plane Location I degk Frit Name Type Zone Source a Bulk_Silicon Volume Zone 1 3DIC_He Cy Bulk Silicon wall Zone 1 3DIC_He oxide Wall Zone 1 3DIC_He Bottom_Bulk_Silicon wall Zone 1 3DIC_He Q Bulk_Silicon_Oxide Interface Zone 1 3DIC_He Oxide_Semi_Device Interface Zone 1 3DIC_He Q Oxide_HeatA Interface Zone 1 3DIC_He Q Oxide_HeatB Interface Zone 1 3DIC_He Oxide_HeatC Interface Zone 1 3DIC_He Oxide_HeatD Interface Zone 1 3DIC_He 300 08 Oxide_active_contact Interface Zone 1 3DIC_He 300 1 300 03 Oxide_metal1 Interface Zone 1 3DIC_He 300 07 Oxide_mim2 Interface Zone 1 3DIC_He 500 06 cy Oxide_metal2 Interface Zone 1 3DIC_He Semi_Device_Heat4 Interface Zone 1 3DIC_He 300 05 Semi_Device_HeatB Interface Zone 1 3DIC_He Semi_Device_HeatC Interface Zone 1 3DIC_He 300 04 Semi_Device_HeatD Interface Zone 1 3DIC_He 300 03 Semi_Device_active_co Interface Zone 1 3SDIC_He Heat4_active_contact Interface Zone 1 3DIC_He 300 02 HeatB_active_contact Interface Zone 1 3DIC_He HeatC_activ
42. tact should be on the bottom with metall above then mlm2 above and finally metal2 on top 8 Generate missing process layers The following layers and hence material names must be added to the process Bottom Bulk_Silicon Oxide HeatA HeatB HeatC HeatD Semi_Device 9 Ordering of process layers The final ordering should be as follows from bottom to top Bottom gt Bulk_Silicon gt Oxide gt Semi_Device gt HeatA gt HeatB gt HeatC gt HeatD gt Active_Contact gt Metall gt M1M2 gt Metal2 Edit Layer Operation Vertical Position and Layout all units in micrometers 10 layer Bottom deposit no mesh 1 0 thick rectangle 0 0 to 100 100 11 layer Bulk_Silicon deposit 0 5 thick rectangle 0 0 to 100 100 12 layer Oxide deposit 4 5 thick rectangle 0 0 to 100 100 13 layer Semi_Device insert position 0 7 0 05 thick rectangle 22 24 22 4 to 85 92 64 0 14 layer HeatA insert position 0 75 0 15 thick rectangle 70 56 23 36 to 85 76 42 4 15 layer HeatB insert position 0 75 0 15 thick rectangle 65 76 23 36 to 70 4 42 4 16 layer HeatC insert position 0 75 0 15 thick rectangle 44 0 23 36 to 64 0 42 4 17 layer HeatD insert position 0 75 0 15 thick rectangles 22 56 23 52 to 42 56 42 52 22 56 44 0 to 42 56 63 0 44 0 44 0 to 64 0 63 0 65 4 44 0 to 85 4 63 0 18 layer Active_Contact insert position 0 75 0 8 thick remove rectangles present in f
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