ECN30603SP/SPV/SPR
Contents
1.2. 1
3. I C 2 6 0C 1 0 HITACHI PDJ 30603 2 1C SP 05014 f w 10 15 ECN30603SP SPV SPR 9 9 1
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5. 9 2 1 1 9 3 1 4 A 1
6. _ 28 0 0 3 _ 20 0 0 2 2 3 8MAX 4 1 0 3 3 6 0 8 _ LSMAX I L SD a awa J 59 0 Q 1 1 23 I 123 025 1 1 4 22 06 01 180025 2 54 6 2 23 97 0 30 _ q 2 ECN30603SPV SP 23TB 30 0 lt 31 0MAX 28 0 0 3 20 00 2 _ 3 8MAX 4 1 0 3 3 6 0 2 1 5MAX ER I Si 3 9 s ZT lt l z z 180 0 25 D D 1 0252019 123 0 25 2 2 0 5 1275 0 250 23 97 0 30 PDJ 30603 2 1C SP 05014 lt 6 gt P 14 15 ECN30603SP SPV SPR 3 ECN30603SPR SP 23TR 30 0 31 0MAX 28 0 0 3 20 0 0 2 3 8MAX _ 4 03 3 6 0 8 1 5 3 14 7MAX 7 7 9 0 11 2 0 3 12 33 0 45 Ima H 1 80 025 1 254 127 23 123 0 25 066 Di
7. 2 3 4 5 6 L
8. 6 IGBT 6 IGBT 20kHz 6 PWM 6 5VCMOS LSTTL HITACHI PDJ 30603 2 1C SP 05014 R1 9 gt P 2 15 ECN30603SP SPV SPR Vc 77 7 1 C nn q V ref ECN30603 ECN30603SP ECN30603SPV ECN30603SPR 9 847 SP 23TA 547 SP 23TB 9 847 SP 23TR HITACHI PDJ 30603 2 1C SP 05014 lt 6 gt 1 ECN30603SP SPV SPR 25 N 1 F VSM VSLVS2 VI MW B
9. 9 5 9 6 9 7 9 8 HITACHI PDJ 30603 2 1C SP 05014 lt 6 gt P 11 15 ECN30603SP SPV SPR
10. fclock 0 494 CTR RTR Hz 1 C 333 7 ECN30603 7 4 2 UB VB WB UT VT GL 5 6kQ 5 500pF 20 HITACHI PDJ 30603 2 1C SP 05014 gt P 8 15 5 MV LF _ 2 VS1 MU 2 GH1 s UT 8 VT 17 WT 6 RS 1 18 uB 4 VB WB 2 VTR CB 5 CL 8 C 1 C 6 GL 15 VCC 4 GH2 3 NC 2 MW CO
11. Vref typical 0 5V OFF VTR 1 R SS 100 GL 6 15 RS 2 y2 2 RS HITACHI PDJ 30603 2 1C SP 05014 lt 6 gt P 7 15 ECN30603SP SPV SPR 4 4 1 0 22 F 20 VB VB 8 2V C C2 1 0 aF 20 V c c DFG1C6 600V 1 2177 DFM1F6 U trr100ns 242 Rs 1 OTR 1800pF 5 _ VB 8 2V 2 RIR 22 5 VB 8 2V 2 1 10 Vref Rs Ns 10 13 13 1 4 2
12. 1 ASO 1 1 3 VCC 15V Tj 25 C 1 0 H BJ SE ST EE lt gt 0 400 450 V 3 1 2 V c c V c c 4 1 A 2 0 135 LVSDON lt 14 1 2 P 10 0 VCCop 0 6 1 0 4 VCCop 0 2 0 0 I 10 15 20 VCC 4 Vcc HITACHI PDJ 30603 2 1C SP 05014 6 12 15 ECN30603SP SPV SPR 1 3 ASO Vs
13. I C 100k 1MQ d e I C No 1 2 2 4 6 7 8 9 9 10 20 21 21 22 22 23 1 C I C C
14. 1 2 23 MV V 1 1 2 VS1 VS2 C I C BL VS 1 VS2 GH1 GH2 4 HITACHI PDJ 30603 2 1C SP 05014 lt 6 gt P 9 15 ECN30603SP SPV SPR 7 8 8 1 8 2 8 3 0 39 0 78N m a I C I C b I C
15. 6 1 VS2 V W IGBT 1 2 2 MW W 1 3 NC 4 W IGBT FWD 3 i GH2 5 VCC 6 GL 7 C 1 8 C 1 2 9 CL 1 10 CB VB 11 CR 12 VTR 13 WB W 14 VB V 15 UB 16 RS 17 WT W 18 VT V 19 UT 20 GH 1 U V IGBT FWD 3 21 MU U 1 22 VS1 U IGBT
16. 5 AS0 T VCC 13 5 16 5V A CO Go rS rS 50 100 Tj CC 5 AS0 Tj 1 4 1 C Vref Rs 3 4 1 5 a T 1 1 0 C b Vs 450V HITACHI PDJ 30603 2 1C SP 05014 lt 6 gt ECN30603SP SPV SPR 2 1 ECN30603SP SP 23TA 30 0 31 0MAX P 13 15
17. 9 gt P 1 15 I C ECN30603SP SPV SPR 500V 1 5A 1 C AC200 lt 230V DC PWM 1 C IGBT Insulated Gate Bipolar Transistor 1 I C 1 ECN3064 ECN30601 1 A V CC
18. VIN UB VB WB 4 HW IP IMU MV MW De WB s c zz mU 1 T j 25 GAI I C 2 1 Rijc 4C W 2 R j a 4 0 XW HITACHI 3 15 PDJ 30603 2 1C SP 05014 lt 6 gt P 4 15 ECN30603SP SPV SPR 2 T B Ta 25 1 Mop_ MS 13 5 15 16 5 ISH VS2 0 3 1 0 UB VB WB 0V VS 325V VCC 15V UT VT UB VB WB 0V 6 IB 0A 55 5 16 VS 325V V00 15V 8 1 0 35A 9 5 7 Eb fr EDJ 0 11 VFDT IMU MVMW 22 28 V 10 35 12 22 13 We 14 UT VT WT 3 5 V IVCC 15V 7 UT WT uA OV 100 5V 82 V vecisviBo ___ 25
19. m 5 _ 11 0 12 0 12 9 soOF WU MI Vrh 101105 09 RS IILRS Rs 100 24 lfref IRS 40 15 5 gs VCCI5V _ 25 ITMNT MMVMW 18 s 121 gslVCC 15V S 1 t y p200kQ 1 2 LVSD VCC 3 IGBT 1 UT VT UB VB WB HITACHI PDJ 30603 2 1C SP 05014 lt 6 gt ECN30603SP SPV SPR 3 3 1 i UB VB WB H UT amp UB H VT VB VI amp VB H WT WB WT amp WB H 3 2 1 2 0 UT V T UB MU MV MW OFF ON OFF OFF OFF HITACHI z P 5 15 PDJ 30603 2 1C SP 05014 lt 6 gt ECN30603SP SPV SPR 3 IC RS
20. 5 i 23 97 0 30 89 HITACHI PDJ 30603 2 1C SP 05014 R1 P 15 15 IC s i SOA
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ECN30603SP/SPV/SPR