H24年度卒研発表会概要集 - 電子工学科
Contents
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169. Dot Space 40 um 40um Dot Space 40 um 40 um Dot Space 40 um 40 um um ml Dot 36 95 Dot 37 10 Space 43 05 E Space 42 90 Dot Space 20 um 40 um Dot Space 20 um 40 um Dot Space 20 um 40 um um um Dot 17 10 Dot 18 65 Space 42 90 5 Space 41 35 4 3 TSV Ge Ge TSV Ge Au Ge Au Ge Au 5 Ge Au Au 400 50W 300 200 HK 100 9 0 0 3 10 13 20 00 03 10 13 20 min
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173. C Arduino 1 Bluetooth wi fi Arduino uno R3 2 AVR 1 Arduino 2 8 3 PARALLAX PING DIASAWTOYS 1 24 RC Car Mode
174. Au Lafter Kpefore x100 1 Hpefore Ge Ge 100 before irradiation O x 0 S 0 3 Sx10 ercm x 0 Maximum hole mobility pu cm Vs x 0 3 60 40 20 Maximum hole mobility shift Au 0 0 2 0 4 0 6 0 8 1 0 Gate length uml Gate length um 2 3 0 0 2 0 4 0 6 0 8 1 0 4 Ge SiGe 5 1 pp 170 172 1999
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177. cm a Ge b Au 5 3 2 6 3 8iOs Au 200 nm CVD SiOs 500 nm HMDS SiOs Ge 100 nm resist SIO2 SIO2 AU AU AU SIO2 SIO2 SIO2 Si substrate Si substrate Si substrate Au CVD SiO gt resist SIO2 SIO2 Ge SIO2 AU AU AU SIO2 SIO2 SIO2 SLHSubstrate SLSubstrate SLSubstrate SiO SE 6 3 SEM EDX 7 Au 8iOs Ge 8iO
178. 0 153 wc 0 0255 hs 0 0133 wc 0 0110 s 0 344 y 0 0281 wc 0 110 hs 0 0216 wc 0 0171 ns 0 218 z 2 35 wc 18 6 hs 1 77 wc 0 467 hs 103 35 16 3 3 1 xyz z 0 240 0 240 1 x x z 120 1 y 8 8 wc hs 5 5 x 0 129 wc 0 02 hs 0 00457 wc 0 00163 js 0 308 y 0 0197 wc 0 00654 hs 0 015 wc 0 00969 js 0 193 z 2 35 wc 18 6 hs 1 77 wc 0 467 hs 103
179. 200 400 600 800 1 mA a before e 4 0x10 A4_ 1 0x10 3 6x10 ecm hfFE 2SC2661 hr electron unbias 200 400 Ic mA b 1 600 600 1 lc Mr lc Ne 0 Ic EE Ic 100 mA 80 240
180. sow 2 10mm lsem 10mm 3 Au 3 a Ge a Ge SRM 2 100 nm a Ge a Ge a Ge Au 5 Au a Ge SiOs 2 3 4 SEM SEM Au 4 a Ge
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183. 450 8 4 Au MILC a Ge Au 800 a Ge a Ge a Ge Au 1 CMC p 236 2007 2IMinoru DOL Futoshi KATSUKI Hiroshi KUMAGAI and Makoto TAKAGI Journal of Japan Institute of Light Metals Vol 57 No 1 pp 30 36 2007 4 2 5 2 22 3
184. 795 769 Port 8 ON EN SE 4 WebDAV HTTP Basic HTTPS HTTPS SSL Secure Socket Je 9 ch SSL SSL 5 Web SSL 6
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187. 0 nm GaO sample B sample A Ga O W 141 9 S1010 3 b sample B T 500 C Sl Substrate 100nm Sl Substrate 100nm 1 a sample A T 500C b sample B T 500C SEM 2 XRD SEM sample A B XRD 2 sample A 3 sample B XRD 20 2 XRD sample A XRD 30 40 T sample B T 400C XRD 3
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191. MOSEET 5 HSPICE DC DC DC DC IC MOSFET HSPICE MOSFET 6 pp 26 1992 2 International Rectifier IRLML9301TRPbP pp 1 2 3 International Rectifier TRLMS1902PbF pp 1 2 4 DC DC pp 13 15 2 5 2 2 2 AC DC 1 SOO 1 SC
192. Oishi et al Appl Surf Sci pp212 213 2003 H Nakahara et al Surf Sci pp440 441 1993 R A Zhachuk et al Surf Sci 565 pp40 44 2004 pp14 18 1994 pp52 53 1994 2 5 2 2 2H HI 1
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200. y arb units A 300 400 300 400 300 Raman Shift cm 1 Raman Shift cm 1 Raman Shift cm 5 Au a Ge SiOs SEM Au Au CC gt CC Intensity arb units Batata ema es a a a a a en a ee Riemann emda stim tmnt Amst 300 400 300 400 300 400 Raman Shift cm 1 Raman Shiftlcm Raman Shiftlcm 6 Au a Ge SiO SEM Au Ge Ge 7 a b Au a Ge SiOs
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