Notes on User's Manual of SH7250 Series
Contents
1. Error response H CD H 52 No verification function is provided to check program erase state of the area where the data is undefined by suspend of program erase ex reset input power supply interruption Therefore if the undefined area should be used again make sure to completely erase data before usage RENES Page 2 of 4 E AS RENESAS TECHNICAL UPDATE TN SH7 A876A E Date of Issue 10 28 2013 24 EEPROM 26 EEPROM for SH7254R SH72546R 28 EEPROM for SH7256 24 1 Features 26 1 for SH7254R SH72546R 28 1 for SH7256 Blank check function If data is read from erased EEPROM by the CPU undefined values are read Using blank check command of the FCU allows checking of whether the EEPROM is erased in a blank state Either an 8Kbytes 1 erasure block or 8 bytes of area can be checked by a single execution of the blank check command Blank check function checks the erase state of the area where erase has ended The function is disabled when programming erasing was suspended ex reset input power supply interruption 24 9 Usage Notes 26 9 for SH7254R SH72546R 28 9 for SH7256 5 Reset during Programming or Erasure To reset the FCU by setting the FRESET bit in the FRESETR register during programming or erasure hold the FCU in the reset state for a period of tresw2 see section 30 Electrical Characteristics section 32 for SH7254R SH72546R section 34 for SH7256 Since a high voltage is applied2. 28 2013 NOTE Blank check function checks the erase state of the area where erase has ended The function is disabled when programming erasing was suspended ex reset input power supply interruption 23 5 5 Programming Erasing Host Command Wait State 25 5 5 for SH7254R SH72546R 26 5 5 for 26 5 5 9 User Boot MAT Blank Check In response to a user boot MAT blank check command sent from the host this LSI checks whether the user boot MAT is completely erased When the user MAT is completely erased this LSI returns a response H 06 If the user boot MAT has an unerased area this LSI returns an error response sends H CC and H 52 in that order Command H 4C Response H 06 Error response H CC H 52 No verification function is provided to check program erase state of the area where the data is undefined by suspend of program erase ex reset input power supply interruption Therefore if the undefined area should be used again make sure to completely erase data before usage 10 User MAT Blank Check In response to a user MAT blank check command sent from the host this LSI checks whether the user MAT is completely erased When the user MAT is completely erased this LSI returns a response H 06 If the user MAT has an unerased area this LSI returns an error response sends H CD and H 52 in that order Command H 4D Response H 06
3. Date of Issue 10 28 2018 RENESAS TECHNICAL UPDATE 1753 Shimonumabe Nakahara ku Kawasaki Kanagawa 211 8668 Japan Renesas Electronics Corporation Contact Us http japan renesas com contact E mail csc renesas com Product Mpu Mcu Document TN SH7 A876A E Category No Title Notes on User s Manual of SH7250 Series Information Technical Notification Category i Lot No Applicable See below p 4 References See below Product All Lots This document describes modifications in ROM and EEPROM sections in each SH725x user s manual The parts described in quotation mark should be added This document is described based on SH72531 SH72533 user s manual If section numbers differ in other user s manuals the product name and the section number are indicated in brackets 23 ROM 25 ROM for SH7254R SH72546R 26 ROM for SH7256 23 5 2 State Transition in Boot Mode 25 5 2 for SH7254R SH72546R 26 5 2 for SH7256 4 Waiting for Host Command for Programming or Erasure In this state this LSI performs programming or erasure according to the command sent from the host The LSI enters programming data wait state erasure block specification wait state or command read or check processing state depending on the received command Upon reception of a programming selection command the LSI waits for programming data After the programming selection command send the programming start address and programmi
4. ng data from the host Specifying H FFFFFFFF as the programming start address terminates programming processing and the LSI makes a transition from the programming data wait state to programming erasure command wait state Upon reception of an erasure selection command the LSI waits for erasure block specification After the erasure selection command send the erasure block number from the host Specifying H FF as the erasure block number terminates erasure processing and the LSI makes a transition from the erasure block specification wait state to programming erasure command wait state As the entire area of each of the user MAT user boot MAT and EEPROM data MAT is erased before the LSI enters programming erasure command wait state after it is started in boot mode erasure processing is not needed except for the case when the data programmed in boot mode should be erased without resetting the LSI In addition to programming and erasing commands many other host commands are provided for use in programming erasure command wait state these include commands for checksum blank check erasure check TE memory read and status inquiry For details on these host commands see section 23 5 5 Programming Erasing Host Command Wait State 25 5 5 for SH7254R SH72546R 26 5 5 for SH7256 c 2013 Renesas Electronics Corporation All rights reserved Page 1 of 4 2tENESAS RENESAS TECHNICAL UPDATE TN SH7 A876A E Date of Issue 10
5. to the EEPROM during programming and erasure the FCU has to be held in the reset state long enough to ensure that the voltage applied to the memory unit has dropped Do not read from the EEPROM while the FCU is in the reset state When a power on reset is generated by asserting the RES pin during programming or erasure of the flash memory hold the reset state for a period of tresw2 see section 30 Electrical Characteristics section 32 for SH7254R SH72546R section 34 for SH7256 In a power on reset not only does the voltage applied to the memory unit have to drop but the power supply for the EEPROM and its internal circuitry also have to be initialized Thus the reset state must be maintained over a longer period than the case of resetting the FCU While programming or erasure is performed do not generate an internal reset caused by WDT counter overflow A reset caused by WDT cannot ensure a sufficient time required for voltage drop for the memory unit initialization of the power supply for the EEPROM or initialization of its internal circuit When either a power on reset by asserting the RES pin or an FCU reset by setting the FRESET bit in the FRESETR register is executed during programming or erasure the whole data in the programming or erasure area becomes undefined No verification function is provided to check program erase state of the area where the data is undefined by suspend of program erase ex reset input power suppl
6. y interruption Therefore if the undefined area should be used again make sure to completely erase data before usage RENES Page 3 of 4 a AS RENESAS TECHNICAL UPDATE TN SH7 A876A E Applicable Products and References Series Group SH7250 SH72531 SH72533 SH7254R SH7256 SH72546R Reference SH72531 User s Manual Hardware SH72533 User s Manual Hardware SH7254R Group User s Manual Hardware SH7256 Group User s Manual Hardware SH72546R User s Manual Hardware RENESAS Date of Issue 10 28 2013 Document No RO1UH0267EJ0200 RO1UH0304EJ0100 RO1UH0306EJ0300 RO1UH0344EJ0200 RO1UH0235EJ0100 Page 4 of 4
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