IR detectors user's guide
Contents
1. e load at the preamplifier output For high frequency gt 20 MHz signals impedances of the output and load must be matched e whether bandwidths of the components are reasonably well matched to each other e whether the detector is not saturated or damaged by too strong irradiation Refer to Beam Power Limitations section of this manual If a problem still exists try to identify and solve it by actions mentioned below e Cycle the power of the components off and on again e After shielding switching off the radiation source do you see any signal decrease If yes most proba bly you see a signal from the optical radiation you hope to see No or too weak response to optical radiation Check through General Test Procedure If you do not have any other detector to test your radiation source move a hot object your hand or soldering iron rapidly in front of the detector across its whole field of view The higher temperature of the object or shorter its distance to the detector the higher optical signal at the detector output e Test your detector with another available radiation source A warm or hot object moved in front of the detector can be used for DC or low frequency AC coupled devices e Align or improve your optical setup for the maximized signal or signal to noise ratio e Estimate the detector response taking into account an irradiation at the detector active area and the responsivity of the detector or of the detection module2. General Test Procedure Check the shape of the pulse with another detector if possible the operating conditions detector temperature bias optical setup if impedances of the detector cables preamplifier and your read out instrument are matched if the frequency response of your preamplifier was measured before integration with the detector Operational temperature not reached Refer to Temperature Sensor and Heat Sinking sections of this manual Check e thermistor resistance or indicators on a cooler controller check ambient temperature whether this is not higher than maximal allowing for a given detector ope rating temperature supply voltages and currents of the Peltier element supply cooler controller circuitry and set point connections check detector sealing is condensation or ice deposition seen on detector element or eleswhere If the operational temperature is still higher than expected or the hermetic detector package is unsealed con tact your technical support Changed Detector Resistance Device resistance might change with time by a few percent Larger variations are usually caused by degra dation due to high optical irradiance or some other cause of excessive temperature on the active element i e during soldering or improper TE cooler operation or incorrect bias Check connections for short or ope n circuits Let your technical support know about possible sources of degradation
3. area of optically immersed detectors which may differ from the physical active area due to immersion lens properties Ambient Temperature K Ambient temperature during test measurements Thermistor Type TE cooled detectors only Thermistor types and characteristics are available on VIGO System website Typically TBO4 222 is used Cooler Current and Voltage TE cooled detectors only Optimum current and voltage of Peltier element Detector Temperature K TE cooled detectors only Temperature measured by thermistor during test Detector Resistance Dynamic resistance measured under specified bias condition Reverse Bias Voltage Bias Current Optimum reverse bias voltage for photovoltaic detectors and optimum bias current for photoconductors The maximum allowable bias current is stated on the Detector Test Report supplied for each photoconductive de tector For photovoltaic devices optimum reverse bias can be provided by VIGO upon request Current Voltage Responsivity Aopt Current responsivity is typically used for photovoltaic detectors while voltage responsivity for photoconduc tors and photoelectromagnetic detectors Stated values are given for the optimum wavelength or as otherwi se agreed Current Voltage Noise Density A Hz or V Hz Normalized per Hz noise current or noise voltage Detectivity Aopt cmHz W The signal to noise ratio SNR at a detector output normalized to 1 W radiant power a 1 cm detecto
4. field applied to the semiconductor by a per manent magnet built in to the detector housing PEM detectors do not require electrical bias and show no flicker 1 f noise The devices are typically used as fast uncooled detectors of long wavelength radiation Photovoltaic Devices PV or PVM Photovoltaic devices photodiodes are semiconductor structures with one PV or multiple PVM homo or heterojunctions Absorbed photons produce electron hole pairs resulting in external photocurrent Reverse bias voltage may be applied to increase differential resistance reduce the shot noise improve high frequen cy performance and dynamic range Reverse bias may increase responsivity in some devices Unfortunately at the expense of flicker 1 f noise in most cases PV detectors are more vulnerable to electrostatic dischar ges than photoconductors Circuitry for Photoconductive Detectors A typical circuit for PC MCT detectors is shown in fig 1a The detectors are usually low impedance devices and require low input voltage noise preamplifiers A constant bias current is used in the detector requiring a low noise DC voltage supply or battery with current limiting resistor R_ Typically AC coupling is used to pre vent saturation of the preamplifier by detector bias Ri R C RL c y C e T Yp a b Fig 1 Preamplifier circutry for PC a and PV b detectors Circuitry for Photovoltaic Detecto
5. IR detectors user s guide WARRANTY VIGO System S A hereby represents and warrants all Products manufactured by VIGO and sold hereunder to be free from defects in workmanship or material during a period of twelve 12 months from the date of delivery save for products for which a special warranty is given If any Product proves however to be defective in workmanship or ma terial within the period herein provided VIGO System undertakes to the exclusion of any other remedy to repair or at its own option replace the defective Product or part thereof free of charge and otherwise on the same conditions as for the original Product or part without extension to original warranty time Defective parts replaced in accordance with this clause shall be placed at the disposal of VIGO VIGO also warrants the quality of all repair and service works performed by its employees to products sold by it In case the repair or service works should appear inadequate or faulty and should this cause malfunction or nonfunctio ning of the product to which the service was performed VIGO shall at its free option either repair or have repaired or replace the product in question The working hours used by employees of VIGO for such repair or replacement shall be free of charge to the client This service warranty shall be valid for a period of six 6 months from the date the se rvice measures were completed This warranty is however subject to following conditions 1 A subs
6. and check it against measured values e Evaluate noise in the system Calculate a noise introduced by the detector or detection module basing on their noise density from their data sheets Check it against measured response of the blinded de tector Check if the radiation will be strong enough to obtain good signal to noise ratio A signal is easy to pick out of a noise when its peak to peak value is several times greater than of the noise If it is lower than expected consider increasing the radiation power entering the detector active area Check also if the radiation is not too strong causing detector saturation or damage If you cannot obtain signal sufficiently higher than noise contact your technical support Excess noise Check through General Test Procedure Excess noise may be caused by poor connections ground connections and ground loops high background photon flux or EMI e g inductive motors driving radiation chopper You may also decrease the noise by re ducing your system bandwidth If you are unable to identify external excess noise source contact your technical support Unstable signal Check through General Test Procedure e the cables e the radiation sources e the DC or low frequency signal may vary due to fluctuations of thermal background radiation e whether temperature set point was achieved TE cooled devices If the device is still unstable contact your technical support Slow signal rise fall time Check through
7. and three twists at the distance minimum 6 mm from the base of the package Keep the leads of the detecting element shorted when shaping Soldering Leads IR detectors can be easily damaged by excessive heat Special care should be taken when soldering the le ads Usage of heat sinks is highly recommended Tweezers can be used for this purpose when soldering clamp a lead at a place between the soldering iron and the base of the package To avoid destructive influ ence of ESD and other accidental voltages e g from a non grounded soldering iron rules for handling LSI integrated circuits should be applied to IR detectors too Leads should be soldered at 370 C or below within 5 seconds Cleaning Window Keep the window clean Use a soft cotton cloth damped with isopropyl alcohol and wipe off the surface gen tly if necessary Mechanical Shocks The Peltier elements may be damaged by excessive mechanical shock or vibration Care is recommended during manipulations and normal use Drop impacts against a hard surface are particularly dangerous Temperature Sensor The built in thermistor serves as a sensor of the active element temperature The maximal power dissipated by the thermistor should not exceed 0 2 mW and for accurate temperature measurement the power should be lt 0 03 mW Heat Sinking Suitable heat sinking is necessary to dissipate heat generated by the Peltier cooler or excessive optical irra diation Since heat is almost 100 dissipa
8. he Customer ee OO This warranty is expressly in lieu of and excludes all other conditions warranties and liabilities expressed or implied whether under law statute or otherwise including without limitation any implied warranties of merchantability or fit ness for a particular purpose and all other obligations and liabilities of VIGO or its representatives with respect to any defect or deficiency applicable to or resulting directly or indirectly from the Products supplied hereunder which obli gations and liabilities are hereby expressly canceled and waived VIGO s liability shall under no circumstances exce ed the invoice price of any Product for which a warranty claim is made nor shall VIGO in any circumstances be liable for lost profits or other consequential loss whether direct or indirect or for special damage RMA Request Instructions e No Product may be returned without first contacting VIGO for a Return Material Authorization RMA num ber e Please obtain a RMA number at claim vigo com pl before returning any item When requesting a RMA number please state your order number the product you wish to return and the reason for return We will only accept returns which have an RMA number Authorized returns are to be shipped according to received instruction from VIGO in appropriate shipping box An unauthorized return i e one for which an RMA num ber has not been issued and authorized returns however shipped with incorrect custo
9. ms documents will not be accepted e Please print the RMA number clearly on the return label to avoid any delay in processing Please send pac kage to VIGO System S A 129 133 Poznanska St PL 05 850 Ozarow Mazowiecki Poland SUN a 129 133 Poznanska St 05 850 Ozarow Mazowiecki Poland tel 48 22 733 54 20 fax 48 22 733 54 26 e mail info vigo com pl Please note the information contained in this document is subject to change without further notification VIGO System reserves the right to alter the performance and any resulting specifications VS 11 06 29MB Introduction This guide is written to help users select and operate the first stage signal processing electronics or preamp of infrared detectors manufactured by VIGO Please read this before operating the detector Photoconductive Devices PC Photoconductive Devices PC are detectors based on the photoconductive effect Infrared radiation genera tes charge carriers in the semiconductor active region decreasing its resistance The resistance change is sensed as a voltage change by applying a constant current bias The optimum bias current is specified in the Final Test Report and depends on the detector size operating temperature and spectral characteristics Photoelectromagnetic Devices PEM PEM detectors are photovoltaic devices based on the photoelectromagnetic effect It relies on a spatial sepa ration of optically generated electrons and holes in a magnetic
10. r opti cal area and a 1 Hz bandwidth The higher the D value the better the detector Stated value is given for an optimum wavelength Precautions for Use Operating temperature A detector should be operated at its optimal temperature given in the test report Maximum voltage Do not operate the photovoltaic detector at higher bias voltages than suggested in the test report Be careful using ohmmeters for photovoltaic detectors Standard ohmmeters may overbias and damage the detector This is especially true for small or SWIR pho tovoltaic detectors Bias of 10 mV can be used for resistance measurements of any type of detector Ask for conditions of I V plot measurements Usage Devices can operate in the 10 80 humidity in the 20 C to 30 C ambient temperature range Operation at gt 30 C ambient may reduce performance for standard Peltier controllers Ask for systems that can operate at 30 80 C ambient Storage The following conditions should be fulfilled for safe and reliable operation of detector e store in dark place 10 to 90 humidity and 20 C to 50 C temperatures e avoid exposing to the direct sunlight and strong UV VIS light as this may result in degradation of a de tector performance e avoid electrostatic discharges at leads therefore the devices should be stored having leads shorted Handling Some IR window materials such as BaF2 are soft Particular attention should be paid to not scratch a surface of the windo
11. rs Transimpedance preamps that provide constant voltage reverse bias are required for the best linearity and frequency response extend high frequency response beyond the unbiased values published in individual VIGO detector data sheets Consult us for options This can be achieved using transimpedance preamplifiers as shown in the Fig 1b This preamplifier provides also biasing of the detector with DC reverse voltage In this way the conditions for a maximum signal to noise ratio in a wide waveband are created Electrical Interface TO 8 header TO 39 he ader E 9 2 7 Signal 1 and 2 Rever se bias optio oe nal 1 Sand ao RS GND Signal 1 and 3 3 Reverse bias optional 1 and 3 Thermistor 7 and 9 TE cooler supply 2 and 8 GND 11 Not used 4 5 6 10 12 Fig 2 Header pin layout bottom view dimensions in mm Signal and signs are to indicate direction of reverse bias in PV devices For PC detectors bias polarity changes signal sign but is not important for performance and frequency response For BNC or SMA connec tor based PV packages the anode is connected to the inner pin and photocurrent flows from the outer shiel ding to the inner pin Terms used in Detector Final Test Report Active Area The physical area of a photosensitive element the active region that converts incoming optical radiation into electric output signal Optical Active Area The apparent active
12. tantiated written claim as to any alleged defects shall have been received by VIGO System within thir ty 30 days after the defect or fault became known or occurred and 2 The allegedly defective Product or part shall should VIGO so require be sent to the works of VIGO or to such other place as VIGO may indicate in writing freight and insurance prepaid properly packed and labe led This warranty does not however apply when the defect has been caused through 1 normal wear and tear or accident 2 misuse or other unsuitable or unauthorized use of the Product or negligence or error in storing maintaining or in handling the Product or any equipment thereof 3 wrong installation assembly or failure to service the Product or otherwise follow VIGO s service instructions including any repairs or installation or assembly or service made by unauthorized personnel not approved by VIGO or replacements with parts not manufactured or supplied by VIGO modifications or changes of the Product as well as any adding to it without VIGO s prior authorization burned active element by irradiation above damage thresholds electrostatic discharges improper detector bias improper TE cooler bias TE cooler damage or active element overheating other factors dependent on the Customer or a third party Notwithstanding the aforesaid VIGO System liability under this clause shall not apply to any defects arising out of materials designs or instructions provided by t
13. ted at the base of the detector housing it must be firmly attached to the heat sink Figs 3 a and b Heat sinking via the mounting screw or via the detector housing cylindrical walls is not sufficient Figs 3 c and d A thin layer of heat conductive epoxy or silicone grease should be ap plied to improve thermal contact between detector housing and heat sink A heat sink thermal resistivity of 2 K W is typically required for the most two stage and three stage Peltier coolers Four stage cooler require 1 K W Heat conductive grease a YES b YES N V BE g W S SSSSS SIS Y SSSSSSNN ANN g S wm Vs sed z el Tur C NO d NO Fig 3 Heat dissipation from TE cooled detector Troubleshooting First read the previous parts of this manual especially Precautions for Use If a problem persists check thro ugh the information given below General Test Procedure Check whether components of your measurement system are connected correctly whether connections are snug tight whether supply voltages or currents of the components are consistent with the specification whether an appropriate detector operating temperature is achieved proper thermistor resistance or indicators on a cooler controller e attenuation gain factors at your measurement set up
14. w A damaged window may entirely degrade the detector performance Excessive mechanical stress applied to the package itself or to a device containing the package may result in permanent damage Peltier element inside thermoelectrically cooled detectors is susceptible to mechanical shocks Great care should be taken when handling cooled detectors Beam Power Limitations Damage thresholds specified as integrated power of incoming radiation e For devices without immersion lens irradiated with continuous wave CW or single pulse longer then 1 us irradiance on the active area must not exceed 100 W cm The irradiance of a pulse shorter than 1 us must not exceed 1 MW cm For optically immersed devices irradiated with CW or single pulse longer then 1 us irradiance on the apparent optical active area must not exceed 2 5 W cm The irradiance of the pulse shorter than 1 us must not exceed 10 kW cm For repeated irradiation with pulses shorter than 1 us the equivalent CW irradiation average power over the pulse to pulse period should be less than the CW damage threshold according to equ ation equivalent CW radiation power pulse peak power focus area pulse duration repetition rate e Saturation thresholds vary by detector type and can be provided upon request Shaping Leads Avoid bending the leads at a distance less than 2 mm from a base of the package to prevent glass seal da mage When shaping the leads maximum two right angle bends
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