Philips BUK216-50YT User's Manual
Contents
1. The internal ground resistor limits the reverse battery ground current Power is dissipated and the T rating must be observed 3 To limit currents during reverse battery and transient overvoltages positive or negative 4 Of the output power MOS transistor March 2002 2 Rev 1 200 Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version STATIC CHARACTERISTICS Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN TYP TYP Clamping voltages Battery to ground la 1 mA 50 55 Battery to load l lqg 1mA 50 55 Negative load to ground lI 10 mA 18 23 Negative load voltage l 15 A t 300 us 25 Currents 9 V lt Vea lt 16 V Quiescent current Vie 0V Off state load current Vet Vac Operating current L 0A Nominal load current Ve 0 5 V Resistances On state resistance 9to35V 5A 300 us On state resistance 6V 5A 300 us i Internal ground resistance la 10 mA 190 1 For a high side switch the load pin voltage goes negative with respect to ground during the turn off of an inductive load 2 On state resistance is increased if the supply voltage is less than 9 V Refer to figure 8 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load 4 The measured current is in the load pin only 5 This is the continuous current drawn from the s2. 15 21 A Short circuit load detection Status indication only Battery load threshold voltage Vag 16 V Overtemperature protection Threshold junction temperature SWITCHING CHARACTERISTICS Tm 25 C Vag 13 V for resistive load R 13 Q SYMBOL PARAMETER Jeonbmons mm During turn on from input going high taon Delay time to 10 VL 40 60 us dvV dt Rate of rise of load voltage 30 to 70 VL 0 5 1 V us tesa Total switching time to 90 VL 160 225 us During turn off from input going low 70 100 us 0 5 1 V us 95 130 us ta off Delay time to 90 V UNIT dV dt Rate of fall of load voltage 70 to 30 V t oft Total switching time to 10 VL CAPACITANCES Tm 25 C f 1 MHz Vie 0 V designed in parameters SYMBOL PARAMETER CONDITIONS MIN Input capacitance 15 20 pF Output capacitance Status capacitance 11 15 pF 1 The battery to load threshold voltage for short circuit detection is proportional to the battery supply voltage 2 Latched protection After cooling below the threshold temperature the switch will resume normal operation only after the input has been toggled low 3 For measurement purposes an Input pulse of 1 5ms is used to ensure the device is stabilised in the on state March 2002 6 Rev 1 200 Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version MECHANICAL DATA Plastic single ended surface mounted package Philips version
3. Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version QUICK REFERENCE DATA DESCRIPTION Monolithic single channel high side SYMBOL PARAMETER MAX UNIT protected power switch in SS Oe ee EN TOPFET2 technology assembled in Vba Continuous off state supply voltage a 5 pin plastic surface mount package Continuous load current APPLICATIONS i Continuous junction temperature General controller for driving On state resistance T 25 C lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power TrenchMOS Low on state resistance CMOS logic compatible Very low quiescent current Latched overtemperature STATUS aN protection e Load current limiting POWER at reduced level MOSFET e Short circuit load detection INPUT CONTROL amp ode ral undervoltage shutdown with hysteresis e Diagnostic status indication PROTEIN e Voltage clamping for turn off CIRCUITS of inductive loads e ESD protection on all pins l e Reverse battery overvoltage and transient protection GROUND Fig 1 Elements of the TOPFET HSS with internal ground resistor PINNING SOT426 PIN CONFIGURATION SYMBOL DESCRIPTION Ground Input connected to mb Status Load Battery Marc
4. h 2002 1 Rev 1 200 Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 srme panameren eonomons wt T mac T unr Continuous off state supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature Mounting base temperature during soldering Reverse battery voltages Continuous reverse voltage ie Peak reverse voltage Application information R Rs External resistors to limit input status currents Input and status Continuous currents Repetitive peak currents lt 0 1 tp 300 us Inductive load clamping IL 15 A Veg 16 V Non repetitive clamping energy T 150 C prior to turn off ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN M Vo Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 KQ THERMAL CHARACTERISTICS erweor PARAMETER Jconomons mn TWP max Jun Thermal resistance Rin j mb Junction to mounting base 1 0 1 27 K W 1 For normal continuous operation A higher T is allowed as an overload condition but at the threshold Tro the over temperature trip operates to protect the switch 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value The connected load must limit the reverse load current
5. of D2 PAK 5 leads one lead cropped SOT426 mounting base S DIMENSIONS mm are the original dimensions D UNIT A b ax PA a 1 60 mm u 1 20 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT426 E ISSUE DATE Fig 4 SOT426 surface mounting package centre pin connected to mounting base 1 Epoxy meets UL94 VO at 1 8 Net mass 1 5 g For soldering guidelines and SMD footprint design please refer to Data Handbook SC18 March 2002 7 Rev 1 200 Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the produc
6. of the device March 2002 4 Rev 1 200 Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version UNDERVOLTAGE amp OVERVOLTAGE CHARACTERISTICS Limits are at 40 C lt Tm lt 150 C and typicals at T 25 C Refer to TRUTH TABLE SYMBOL PARAMETER CONDITIONS Undervoltage Low supply threshold voltage Hysteresis Overvoltage High supply threshold voltage Hysteresis TRUTH TABLE ABNORMAL CONDITIONS DETECTED LOAD INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION off on amp normal LC not detected supply undervoltage lockout supply overvoltage shutdown SC detected without trip OT shutdown KEY TO ABBREVIATIONS L logic low UV undervoltage H logic high OV overvoltage X don t care LC low current or open circuit load 0 condition not present SC short circuit 1 condition present OT overtemperature 1 Undervoltage sensor causes the device to switch off and reset 2 Overvoltage sensor causes the device to switch off to protect its load March 2002 5 Rev 1 200 Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version OVERLOAD PROTECTION DETECTION CHARACTERISTICS 6 V lt Vee lt 35 V limits are at 40 C lt Tm lt 150 C and typicals at Tas 25 C unless otherwise stated Refer to TRUTH TABLE srweo paramere GONDMIONS mn TWP max unr Overload protection VeL Vee liim Load current limiting Veg 2 9 V 10
7. port appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1 Please consult the most recently issued datasheet before initiating or completing a design 2 The product status of the device s described in this datasheet may have changed since this datasheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com March 2002 8 Rev 1 200
8. t specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2002 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life sup
9. upply with no load connected but with the input high 6 Defined as in ISO 10483 1 Because of current limiting this parameter is not applicable 7 The supply and input voltage for the Roy tests are continuous The specified pulse duration t refers only to the applied load current March 2002 3 Rev 1 200 Philips Semiconductors Product specification TOPFET high side switch BUK216 50YT SMD version INPUT CHARACTERISTICS 9 V lt Vee lt 16 V Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated fsweot raraweren Jeonomons Tan Tve wa UNT Input current Vig OV Input clamping voltage I 200 uA Input turn on threshold voltage Input turn off threshold voltage Input turn on hysteresis Input turn on current Input turn off current STATUS CHARACTERISTICS The status output is an open drain transistor and requires an external pull up circuit to indicate a logic high Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated Refer to TRUTH TABLE Status clamping voltage ls 100 uA Status low voltage ls 100 uA Status leakage current Vse 5 V Status saturation current Vsg 5V Application information External pull up resistor 47 1 In a fault condition with the pull up resistor short circuited while the status transistor is conducting This condition should be avoided in order to prevent possible interference with normal operation
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