Philips BGM1012 User's Manual
Contents
1. DISCRETE SEMICONDUCTORS DATA SHEET BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 Philips TLS Semiconductors 2002 Sep 06 PHILIPS Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 FEATURES PINNING e Internally matched to 50 Q DESCRIPTION Very wide frequency range 4 Ghz at 3 dB bandwidth Very flat 20 dB gain DC to 2 9 Ghz at 1 dB flatness 10 dBm saturated output power at 1 GHz High linearity 18 dBm D Aen at 1 GHz Low current 14 6 mA Unconditionally stable APPLICATIONS e LNB IF amplifiers e Cable systems e ISM e General purpose Top view MAM455 DESCRIPTION Marking code C2 Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6 pin Fig 1 Simplified outline SOT363 and symbol SOT363 SMD plastic package QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT DC supply voltage 3 4 eC spare rc A s2412 insertion power gain f 1 GHz 20 1 EE Deep saturated load power f 1 GHz 9 7 dBm CAUTION This product is supplied in anti static packing to prevent damage caused by electrostatic discharge during transport and handling For further information refer to Philips specs SNW EQ 608 SNW FQ 302A and SNW FQ 302B 2002 Sep 06 2 Philips Semiconductors Product specification MMIC wideband amplifier BGM2. 2 7 V 2 Is 14 6 mA Vs 3 V 3 Is 18 7 MA Vs 3 3 V Fig 13 Noise figure as a function of frequency typical values 2002 Sep 06 Product specification BGM1012 MLD917 12 K 8 4 0 0 1000 2000 3000 4000 MHz Is 14 6 mA Vs 3V Pp 30 dBm Zo 50Q Fig 14 Stability factor as a function of frequency typical values 90 dee zo0e Scattering parameters Vs 3 V I 14 6 mA Pp 30 dBm Zo 50 Q Tamb 25 C S11 S21 S12 S22 K f MHz MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE FACTOR ratio deg ratio deg ratio deg ratio deg 100 0 25122 14 607 9 33681 12 018 0 032124 16 445 0 26458 64 156 1 6 200 0 27070 2 759 9 42458 5 676 0 028303 6 37 0 20645 64 153 1 8 400 0 27979 9 63627 0 026297 4 545 0 1543 52 558 1 9 600 0 28323 9 76543 0 024833 10 24 0 15203 39 347 1 9 800 0 28557 9 93782 0 023234 14 62 0 16867 27 926 2 0 1000 0 28673 10 03633 0 021523 17 42 0 19196 19 293 2 1 1200 0 28517 10 11638 0 019830 19 83 0 21421 12 703 2 2 1400 0 27902 10 26450 0 018230 21 14 0 23292 7 154 2 4 1600 0 26682 10 40572 0 016902 21 62 0 24605 2 582 2 5 1800 0 24746 10 44088 0 015759 22 32 0 25113 1 26 2 7 2000 0 21894 10 46224 0 014310 22 64 0 24367 4 817 3 0 2200 0 18164 10 45202 0 013012 23 13 0 22184 7 57
3. Output reflection coefficient S22 typical values 2002 Sep 06 6 Philips Semiconductors MMIC wideband amplifier MLD912 ez dB Sala 0 1000 2000 3000 4000 f MHz Is 14 6 mA Vs 3V Pp 30 dBm Zo 50Q Fig 9 Isolation s42 2 as a function of frequency typical values Product specification BGM1012 MLD913 25 s2412 dB 20 0 1000 2000 3000 4000 f MHz Pp 30 dBm Zo 50 Q 1 lg 18 7 mA Vs 3 3 V 2 Ig 14 6 mA Vs 3 V 3 Is 10 6 mA Vs 2 7 V Fig 10 Insertion gain s21 2 as a function of frequency typical values MLD914 20 PL dBm 10 0 Pp dBm f 1 GHz Zo 50 Q 1 Vs 3 3V 2 Vs 3V 3 Vg 2 7 V Fig 11 Load power as a function of drive power at 1 GHz typical values MLD915 20 PL dBm 10 10 0 0 Pp dBm f 2 2 GHz Zo 50 Q 1 Vg 3 3V 2 Vg 3V 3 Vg 2 7V Fig 12 Load power as a function of drive power at 2 2 GHz typical values 2002 Sep 06 Philips Semiconductors MMIC wideband amplifier MLD916 5 5 NF dB 5 3 5 1 4 9 M Lo 2 4 7 4 5 0 1000 2000 3000 f MHz Zo 50 Q 1 Is 10 6 mA Vs
4. data Product specification BGM1012 DEFINITIONS This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification product This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in order to improve the design and supply the best possible Product data Production Notes This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A 1 Please consult the most recently issued data sheet before initiating or completing a design 2 The product status of the device s described in this data sheet may have changed since this data sheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com DEFINITIONS Short form specification The data in a short form specification is extracted from a full data sheet with the same type number and title For detailed information see the relevant data sheet or data handbook Limitin
5. 1012 LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Vs DC supply voltage RF input AC coupled 4 V supply current total power dissipation Ts lt 90 C storage temperature operating junction temperature maximum drive power THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rthj s thermal resistance from junction to Prot 200 mW Ts lt 90 C 300 K W solder point 2002 Sep 06 Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 CHARACTERISTICS Vs 3 V ls 14 6 mA Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN UNIT TYP MAX 14 6 19 19 5 20 1 9 9 9 supply current insertion power gain f 1 GHz f 1 8 GHz 1 f 2 2 GHz f 2 6 GHz f 3 GHz return losses input f 1 GHz f 2 2 GHz return losses output f 1 GHz f 2 2 GHz s4212 isolation f 1 GHz NF noise figure f 1 GHz BW bandwidth at s2112 3 dB below flat gain at 1 GHz 3 1 stability factor 1 5 f 2 2 GHz 3 saturated load power f 1 GHz f 2 2 GHz 3 5 load power at 1 dB gain compression f 1 GHz 4 1 1 1 w o ajo at 1 dB gain compression f 2 2 GHz 1 5 A IP Zuat input intercept point is 1 GHz IP3 out output intercept point f 1 GHz a f 2 2 GHz 2002 Sep 06 4 Philips Semiconductors MMI
6. 3 3 4 2400 0 14000 10 34342 0 011826 0 18787 8 489 3 9 2600 0 10418 9 87989 0 010171 0 13049 4 601 4 9 2800 0 09469 9 20393 0 008664 0 1294 9 578 6 2 3000 0 10595 33 415 8 68177 135 4 0 007541 9 957 0 1127 18 402 7 5 3200 0 11609 42 888 8 18809 142 2 0 006655 0 835 0 092234 23 406 9 0 3400 0 10827 50 017 7 93039 151 5 0 006042 12 444 0 059268 26 453 10 3 3600 0 09866 60 967 7 77538 162 2 0 006205 29 297 0 015829 38 211 10 3 3800 0 08693 80 355 7 33775 172 6 0 007039 40 351 0 028159 152 8 9 6 4000 0 10090 102 07 6 90878 177 1 0 008241 46 053 0 075298 133 1 8 7 Jaijijdue puegspim QINN GOUW sJoJONpUOCTIWAS Se UOonEOuOece yOnNpold Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 PACKAGE OUTLINE Plastic surface mounted package 6 leads SOT363 i c RR Lp detail X 0 1 2mm scale DIMENSIONS mm are the original dimensions A1 max 1 1 2 2 0 8 gal 1 8 UNIT A bp e D OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT363 SC 88 E406 97 02 28 ISSUE DATE 2002 Sep 06 10 Philips Semiconductors MMIC wideband amplifier DATA SHEET STATUS PRODUCT STATUS Development DATA SHEET STATUS Objective
7. C wideband amplifier APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGM1012 MMIC The device is internally matched to 50 Q and therefore does not need any external matching The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz However when the device is operated below 100 MHz the capacitor value should be increased The nominal value of the RF choke L1 is 100 nH At frequencies below 100 MHz this value should be increased to 220 nH At frequencies above 1 GHz a much lower value e g 10 nH can be used to improve return losses For optimal results a good quality chip inductor such as the TDK MLG 1608 0603 or a wire wound SMD type should be chosen Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC Separate paths must be used for the ground planes of the ground pins GND1 and GND2 and these paths must be as short as possible When using vias use multiple vias per pin in order to limit ground path inductance 1 2L RF input C2 J RF output C3 MGU436 Fig 2 Typical application circuit Figure 3 shows two cascaded MMICs This configuration doubles overall gain while preserving broadband characteristics Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig 2 The excellent wi
8. deband characteristics of the MMIC make it an ideal building block in IF amplifier applications such as LBNs see Fig 4 As a buffer amplifier between an LNA and a mixer ina receiver circuit the MMIC offers an easy matching low noise solution see Fig 5 2002 Sep 06 Product specification BGM1012 In Fig 6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit Good linear performance and matched input and output offer quick design solutions in such applications DC block DC block DC block 100 pF 100 pF 100 pF input o output MGU437 Fig 3 Easy cascading application circuit mixer from RF to IF circuit SE gt gt o circuit or demodulator wideband amplifier MGU438 oscillator Fig 4 Application as IF amplifier mixer to IF circuit or demodulator antenna wideband amplifier MGU439 oscillator Fig 5 Application as RF amplifier mixer from modulation to power an gt gt as or IF circuit amplifier wideband amplifier MGU440 oscillator Fig 6 Application as driver amplifier Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 0 8 0 6 0 4 7 0 2 MLD910 1 1 0 Is 14 6 mA Vs r V Pp 30 dBm Zo 50 Fig 7 Input reflection coefficient s41 typical values 7 0 8 0 6 7 0 4 7 0 2 MLD911 Jun Is 14 6 mA Vs TER V Pp 30 dBm Zo 50 Fig 8
9. g values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification 2002 Sep 06 DISCLAIMERS Life support applications These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application Right to make changes Philips Semiconductors reserves the right to make changes without notice in the products including circuits standard cells and or software described or contained herein in order to improve design and or performance P
10. hilips Semiconductors assumes no responsibility or liability for the use of any of these products conveys no licence or title under any patent copyright or mask work right to these products and makes no representations or warranties that these products are free from patent copyright or mask work right infringement unless otherwise specified Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sales addresses www semiconductors philips com Koninklijke Philips Electronics N V 2002 SCA74 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 613516 03 pp12 Date of release 2002 Sep 06 Document order number 9397 750 10021 Lott make things better i eee S5 PHILIPS
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