NXP Semiconductors PIP3210-R User's Manual
Contents
1. 0 50 7 O 100 Fig 31 Typical overload current Va 8V l f T parameter Vsa 13V t 300 us 50 0 50 100 150 200 T C Fig 32 Typical short circuit load threshold voltage ito f T condition Vsa 1 Zth j mb K W 1e 03 4 1e 07 1e 05 1e 03 1e 01 1e 02 t s Fig 33 Transient thermal impedance Zin m f t parameter D t T Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch PIP3210 R MECHANICAL DATA Plastic single ended surface mounted package Philips version of D2 PAK 5 leads one lead cropped SOT426 mounting base S DIMENSIONS mm are the original dimensions D UNIT A b ax PA a 1 60 mm u 1 20 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT426 E ISSUE DATE Fig 34 SOT426 surface mounting package centre pin connected to mounting base 1 Epoxy meets UL94 VO at 1 8 Net mass 1 5 g For soldering guidelines and SMD footprint design please refer to Data Handbook SC18 September 2001 12 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch PIP3210 R DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objec2. 30 50 0 50 150 200 toc o Fig 25 Typical negative load clamping voltage Vig f T parameter condition Vig OV 1 1 1 0 0 9 0 8 0 7 0 6 0 5 0 4 0 3 0 2 0 1 0 0 Vs V Fig 26 Typical reverse diode characteristic I Vx conditions Vig 0 V T 25 C current limiting pm circuit trip 150us 0 2 4 6 8 16 18 20 Val Fig 27 Typical overload characteristic T 25 C f Vs1 condition Veg 16 V parameter t Rev 1 000 Philips Semiconductors TOPFET high side switch VBL TO V BUK215 50Y max typ 25 C Za mi 10 20 30 40 VBG V Fig 28 Short circuit load threshold voltage Viro f Vsa conditions 40 C lt Tma lt 150 C 100pF 0 10 20 40 50 Ae ead Fig 29 Typical output capacitance T 25 C Cy f Vs1 conditions f 1 MHz Vig 0 V 200 20 15 10 5 Vee V Fig 30 Typical reverse battery characteristic Ig f Vsa conditions 0 A T 25 C September 2001 Product specification PIP3210 R
3. 50 0 50 T C 100 150 Fig 18 Typical input clamping voltage Vig f T condition 2004A Veg 13V September 2001 Product specification PIP3210 R 0 1 2 3 4 5 Vse V a 19 Typical status low characteristic T 25 C f V sq conditions Vig 5V Vag 1 13V l 0A 50 0 50 T C 100 150 ees 20 Typical status clamping voltage Vse f T condition ls 100A Vag 13V 2 4 6 8 10 Vsq V ee Typical status characteristic T 25 C f V sg conditions Vig Vag OV Rev 1 000 Philips Semiconductors TOPFET high side switch 50 50 0 50 00 150 200 1 T C Fig 22 Typical battery to ground clamping voltage Veg I T parameter I 50 50 0 50 150 200 i T c Fig 23 Typical battery to load clamping voltage Ve f T parameter I condition l 10MA 25 20 15 Vie V Fig 24 Typical negative load clamping f V c conditions Vig OV T 25 C September 2001 Product specification PIP3210 R
4. be toggled low for the switch to resume normal operation 2 Measured from when the input goes high 3 After cooling below the reset temperature the switch will resume normal operation September 2001 6 Rev 1 000 Philips Semiconductors TOPFET high side switch TOPFET HSS S G IG Fig 4 High side switch measurements schematic current and voltage conventions Ron MOhm 9 V lt Vege lt 35V _ 5 00 150 200 0 1 T Fig 5 Typical on state resistance t 300 us Ron f T parameter Vgc condition 10 A 0 2 1 VeL V Fig 6 Typical on state characteristics T 25 C f T parameter Vag t 250 us September 2001 Product specification PIP3210 R IBaon mA UNDERVOLTAGE CLAMPING SHUTDOWN OVERVOLTAGE SHUTDOWN OPERATING Vig 5V QUIESCENT Vig 0V 10 20 30 50 60 70 40 Vea V Fig 7 Typical supply characteristics 25 C le f Vgq parameter Vig Ron MOhm 1 100 10 Vee V 5 C Fig 8 Typical on state resistance T i 300 us Ron f Vsa condition 10 A t 9 V lt Vege lt 35 V Fig 9 Typical operating supply
5. FIGURATION SYMBOL Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch PIP3210 R LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 srme parameter eonomons wt T mac T unr Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature Mounting base temperature during soldering Reverse battery voltages Continuous reverse voltage ie Peak reverse voltage Application information R Rs External resistors to limit input status currents Input and status Continuous currents Repetitive peak currents 6 lt 0 1 tp 300 us Inductive load clamping lL 10 A Vag 16 V Non repetitive clamping energy T lt 150 C prior to turn off ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MN M Ve Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 kQ THERMAL CHARACTERISTICS srweor PARAMETER CONDITIONS mn WP max unr Thermal resistance Rin j mb Junction to mounting base 1 52 1 86 K W 1 For normal continuous operation A higher T is allowed as an overload condition but at the threshold Tro the over temperature trip operates to protect the switch 2 Reverse battery voltage is allowed only with external resistors to limit the input and s
6. Philips Semiconductors Product specification TOPFET high side switch PIP3210 R DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package APPLICATIONS General controller for driving lamps motors solenoids heaters FEATURES Vertical power TrenchMOS Low on state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection e Overvoltage and undervoltage shutdown with hysteresis e On state open circuit load detection e Diagnostic status indication e Voltage clamping for turn off of inductive loads e ESD protection on all pins e Reverse battery overvoltage and transient protection PINNING SOT426 DESCRIPTION Ground Input connected to mb Status Load Battery September 2001 QUICK REFERENCE DATA SYMBOL PARAMETER I Nominal load current ISO SYMBOL PARAMETER Continuous off state supply voltage Continuous load current Continuous junction temperature On state resistance i FUNCTIONAL BLOCK DIAGRAM STATUS x INPUT a CONTROL amp PROTECTION CIRCUITS GROUND POWER MOSFET Fig 1 Elements of the TOPFET HSS with internal ground resistor PIN CON
7. UNIT Open circuit detection 9 V lt Vee lt 35 V Low current detect threshold 0 24 1 6 A 25 0 4 0 8 1 2 A Hysteresis 0 16 A 1 In a fault condition with the pull up resistor short circuited while the status transistor is conducting This condition should be avoided in order to prevent possible interference with normal operation of the device September 2001 4 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch PIP3210 R UNDERVOLTAGE amp OVERVOLTAGE CHARACTERISTICS Limits are at 40 C lt Tm lt 150 C and typicals at T 25 C Refer to TRUTH TABLE Undervoltage Low supply threshold voltage Hysteresis Overvoltage High supply threshold voltage Hysteresis TRUTH TABLE ABNORMAL CONDITIONS DETECTED LOAD INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION off on amp normal on amp low current detect supply undervoltage lockout supply overvoltage shutdown SC tripped OT shutdown KEY TO ABBREVIATIONS L logic low UV undervoltage H logic high OV overvoltage X don t care LC low current or open circuit load 0 condition not present SC short circuit 1 condition present OT overtemperature 1 Undervoltage sensor causes the device to switch off and reset 2 Overvoltage sensor causes the device to switch off to protect its load 3 The status will continue to indicate OT even if the input goes low until the device cools below the reset threshold Refe
8. current I f T parameters Vsa condition Vig 5 V Rev 1 000 Philips Semiconductors TOPFET high side switch 1E 9 100E 12 50 0 50 0 100 150 T C Fig 10 Typical supply yen current f T condition Vag 16 V Vig OV Vig OV 0 150 50 T C 100 ig 11 Typical off state leakage current a conditions Vz 16 V Vag Vig 0 V 0 150 1 50 T C 00 Fig 12 Status leakage current ls f T conditions Vse 5 V Vig Vag 0 V September 2001 Product specification PIP3210 R 0 0 50 0 50 100 150 T C Fig 13 Low load current detection threshold log f T conditions Vig 5 V Vag2 9 V 0 50 100 150 T C Fig 14 Supply undervoltage aes sauv f T conditions Vig 5 V Va lt 2 V 0 50 100 150 nC Fig 15 Supply overvoltage thresholds Vscov F T conditions Vig 5 V I 100 mA Rev 1 000 Philips Semiconductors TOPFET high side switch 0 50 0 100 150 adn rea ae 16 Typical status low characteristic Vso f T conditions Vag 2 9 V Is 100 uA 50 0 50 100 150 200 TG Fig 1 fa Typical threshold voltage characteristic Vig f T condition 9V lt Vsa lt 16V
9. l rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1 Please consult the most recently issued datasheet before initiating or completing a design 2 The product status of the device s described in this datasheet may have changed since this datasheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com September 2001 13 Rev 1 000
10. oad pin only 5 This is the continuous current drawn from the supply with no load connected but with the input high 6 Defined as in ISO 10483 1 For comparison purposes only 7 The supply and input voltage for the Roy tests are continuous The specified pulse duration t refers only to the applied load current September 2001 3 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch PIP3210 R INPUT CHARACTERISTICS 9 V lt Vee lt 16 V Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated fsweot raraweren Jeonomons Tan Tve wa UNT Input current Vig OV Input clamping voltage I 200 uA Input turn on threshold voltage Input turn off threshold voltage Input turn on hysteresis Input turn on current Input turn off current STATUS CHARACTERISTICS The status output is an open drain transistor and requires an external pull up circuit to indicate a logic high Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated Refer to TRUTH TABLE Status clamping voltage ls 100 uA Status low voltage ls 100 uA Status leakage current Vse 5 V Status saturation current Vsg 5V OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load can be detected in the on state Refer to TRUTH TABLE Limits are at 40 C lt Tm lt 150 C and typical is at Tw 25 C SYMBOL PARAMETER Jeonpmons MIN TYP MAX
11. r to OVERLOAD PROTECTION CHARACTERISTICS September 2001 5 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch PIP3210 R OVERLOAD PROTECTION CHARACTERISTICS 5 5 V lt Vag lt 35 V limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated Refer to TRUTH TABLE srweo paramere GONDMIONS mmn TWP max unr Overload protection VeL Vec liim Load current limiting Vee 2 9 V Short circuit load protection Battery load threshold voltage Response time Overtemperature protection Threshold junction temperature Hysteresis SWITCHING CHARACTERISTICS Tm 25 C Vag 13 V for resistive load R 13 Q SYMBOL PARAMETER eonomons MIN TVP MAX UNIT During turn on from input going high Delay time to 10 VL Rate of rise of load voltage 30 to 70 V 0 7 A Total switching time to 90 VL 140 During turn off from input going low td ott Delay time to 90 V dV dtoi Rate of fall of load voltage 70 to 30 V Mis tott Total switching time to 10 V 120 CAPACITANCES Tm 25 C f 1 MHz Ve 0 V designed in parameters Sueo franaweren _ comomons Tmn Tve Tma UNT Input capacitance 15 Output capacitance Status capacitance 11 1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage After short circuit protection has operated the input voltage must
12. tatus currents to a safe value The connected load must limit the reverse load current The internal ground resistor limits the reverse battery ground current Power is dissipated and the T rating must be observed 3 To limit currents during reverse battery and transient overvoltages positive or negative 4 Of the output power MOS transistor September 2001 2 Rev 1 000 Philips Semiconductors Product specification TOPFET high side switch PIP3210 R STATIC CHARACTERISTICS Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN TYP TYP Clamping voltages Battery to ground la 1 mA 50 55 Battery to load l lqg 1mA 50 55 Negative load to ground lI 10 mA 18 23 Negative load voltage l 10 A t 300 us 25 Currents 9 V lt Vea lt 16 V Quiescent current Vie 0V MAX UNIT Off state load current Vet Vac Operating current L 0A Nominal load current Ve 0 5 V On state resistance 9to 35V 10A 300 us 190 On state resistance 6V 10A 300 us Internal ground resistance la 10 mA 1 For a high side switch the load pin voltage goes negative with respect to ground during the turn off of an inductive load 2 On state resistance is increased if the supply voltage is less than 9 V 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load 4 The measured current is in the l
13. tive data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specification without notice in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 Al
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