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NXP Semiconductors PiP3209-R User's Manual

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1. SYMBOL Rev 1 000 Philips Semiconductors Product Specification TOPFET high side switch PIP3209 R LIMITING VALUES Limiting values in accordance with the Absolute Maximum System IEC 134 srme panameren eonomons Tw T mae T unr Continuous supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature Mounting base temperature during soldering Reverse battery voltages Continuous reverse voltage i Peak reverse voltage Application information R Rs External resistors to limit input status currents Input and status Continuous currents Repetitive peak currents lt 0 1 tp 300 us Inductive load clamping l 1 A Vse 16 V Non repetitive clamping energy T 150 C prior to turn off ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MN M Ve Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 KQ THERMAL CHARACTERISTICS ferme PARAMETER CONDITIONS mmn TWP max unr Thermal resistance Rin j mb Junction to mounting base 2 5 3 K W 1 For normal continuous operation A higher T is allowed as an overload condition but at the threshold Tro the over temperature trip operates to protect the switch 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value The c
2. OAD PROTECTION CHARACTERISTICS 5 5 V lt Vag lt 35 V limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated Refer to TRUTH TABLE srweo paramere __ GONDMIONS J mn TWP max unr Overload protection VeL Vec liim Load current limiting Vee 2 9 V 12 A Short circuit load protection Battery load threshold voltage Response time Overtemperature protection Threshold junction temperature Hysteresis SWITCHING CHARACTERISTICS Tm 25 C 9 V lt Vag lt 16 V for resistive load R 13 Q SYMBOL PARAMETER eonpmons MIN TYP MAX UNIT During turn on to Ve 5V Delay time to 10 VL Rate of rise of load voltage 30 to 70 V 0 i a Total switching time to 90 V During turn off to Vig OV ty ott Delay time to 90 V dV dt Rate of fall of load voltage 70 to 30 V toti Total switching time to 10 V CAPACITANCES Tm 25 C f 1 MHz Vie 0 V designed in parameters SYMBOL PARAMETER CONDITIONS Erie TYP MAX UNIT Input capacitance Output capacitance 100 140 Status capacitance 7 1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage After short circuit protection has operated the input voltage must be toggled low for the switch to resume normal operation 2 Measured from when the input goes high 3 After cooling below the reset temperature the switch will resume normal
3. Philips Semiconductors Product Specification TOPFET high side switch PiP3209 R DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package APPLICATIONS General controller for driving lamps motors solenoids heaters FEATURES Vertical power TrenchMOS Low on state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection e Overvoltage and undervoltage shutdown with hysteresis e On state open circuit load detection e Diagnostic status indication e Voltage clamping for turn off of inductive loads e ESD protection on all pins e Reverse battery overvoltage and transient protection PINNING SOT426 DESCRIPTION Ground Input connected to mb Status Load Battery July 2001 QUICK REFERENCE DATA SYMBOL PARAMETER I Nominal load current ISO SYMBOL PARAMETER Continuous off state supply voltage Continuous load current Continuous junction temperature On state resistance T FUNCTIONAL BLOCK DIAGRAM STATUS x CONTROL amp PROTECTION CIRCUITS s GROUND POWER MOSFET Fig 1 Elements of the TOPFET HSS with internal ground resistor PIN CONFIGURATION
4. cation without notice in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply a
5. is the continuous current drawn from the supply with no load connected but with the input high 6 Defined as in ISO 10483 1 For comparison purposes only 7 The supply and input voltage for the Roy tests are continuous The specified pulse duration t refers only to the applied load current July 2001 3 Rev 1 000 Philips Semiconductors Product Specification TOPFET high side switch PIP3209 R INPUT CHARACTERISTICS 9 V lt Vee lt 16 V Limits are at 40 C lt Tms lt 150 C and typicals at Tm 25 C unless otherwise stated fsweot raraweren Jeonomons Tan Tve was UNT Input current Ve 5V Input clamping voltage l 200 uA Input turn on threshold voltage Input turn off threshold voltage Input turn on hysteresis Input turn on current Input turn off current STATUS CHARACTERISTICS The status output is an open drain transistor and requires an external pull up circuit to indicate a logic high Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated Refer to TRUTH TABLE Status clamping voltage ls 100 uA Status low voltage ls 100 uA Status leakage current Vse 5 V Status saturation current Vsg 5V OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load can be detected in the on state Refer to TRUTH TABLE Limits are at 40 C lt Tm lt 150 C and typical is at Ta 25 C Open circuit detection Low current detect threshold Hysteresis 1 I
6. n a fault condition with the pull up resistor short circuited while the status transistor is conducting This condition should be avoided in order to prevent possible interference with normal operation of the device July 2001 4 Rev 1 000 Philips Semiconductors Product Specification TOPFET high side switch PIP3209 R UNDERVOLTAGE amp OVERVOLTAGE CHARACTERISTICS Limits are at 40 C lt Tm lt 150 C and typicals at T 25 C Refer to TRUTH TABLE Undervoltage Low supply threshold voltage Hysteresis Overvoltage High supply threshold voltage Hysteresis TRUTH TABLE ABNORMAL CONDITIONS DETECTED LOAD INPUT SUPPLY LOAD OUTPUT STATUS DESCRIPTION off on amp normal on amp low current detect supply undervoltage lockout supply overvoltage shutdown SC tripped OT shutdown KEY TO ABBREVIATIONS L logic low UV undervoltage H logic high OV overvoltage X don t care LC low current or open circuit load 0 condition not present SC short circuit 1 condition present OT overtemperature 1 Undervoltage sensor causes the device to switch off and reset 2 Overvoltage sensor causes the device to switch off to protect its load 3 The status will continue to indicate OT even if the input goes low until the device cools below the reset threshold Refer to OVERLOAD PROTECTION CHARACTERISTICS July 2001 5 Rev 1 000 Philips Semiconductors Product Specification TOPFET high side switch PIP3209 R OVERL
7. ny license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1 Please consult the most recently issued datasheet before initiating or completing a design 2 The product status of the device s described in this datasheet may have changed since this datasheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com July 2001 8 Rev 1 000
8. onnected load must limit the reverse load current The internal ground resistor limits the reverse battery ground current Power is dissipated and the T rating must be observed 3 To limit currents during reverse battery and transient overvoltages positive or negative 4 Of the output power MOS transistor July 2001 2 Rev 1 000 Philips Semiconductors Product Specification TOPFET high side switch PIP3209 R STATIC CHARACTERISTICS Limits are at 40 C lt Tm lt 150 C and typicals at Tm 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN TYP TYP Clamping voltages Battery to ground la 1 mA 50 55 Battery to load l lqg 1mA 50 55 Negative load to ground lI 10 mA 18 23 Negative load voltage l 1 A t 300 us 25 Currents 9 V lt Vea lt 16 V Quiescent current Vie 0V MAX Off state load current Vat Vac Operating current L 0A Nominal load current Ve 0 5 V Resistances p Mee kL To On state resistance 9to35V 1A 300us On state resistance 6V 1A 300 us Internal ground resistance la 10 mA 1 For a high side switch the load pin voltage goes negative with respect to ground during the turn off of an inductive load 2 On state resistance is increased if the supply voltage is less than 9 V 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load 4 The measured current is in the load pin only 5 This
9. operation July 2001 6 Rev 1 000 Philips Semiconductors Product Specification TOPFET high side switch PIP3209 R MECHANICAL DATA Plastic single ended surface mounted package Philips version of D2 PAK 5 leads one lead cropped SOT426 mounting base XK DIMENSIONS mm are the original dimensions D UNIT A Ay b c mak D1 1 40 mm 127 11 OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION 984244 SOT426 E 99 06 25 ISSUE DATE Fig 4 SOT426 surface mounting package centre pin connected to mounting base 1 Epoxy meets UL94 VO at 1 8 Net mass 1 5 g For soldering guidelines and SMD footprint design please refer to Data Handbook SC18 July 2001 7 Rev 1 000 Philips Semiconductors Product Specification TOPFET high side switch PIP3209 R DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specifi

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