NXP Semiconductors PIP3119-P User's Manual
Contents
1. Tas lt 150 C device trips if Pp gt Poco which determines trip time 43 57 A z 65 A 185 250 W 380 600 us DER 1 Trip time t4 so varies with overload dissipation Pp according to the formula taso Tosc In Pp Pogo 2 This is independent of the dV dt of input voltage Vis May 2001 3 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3119 P INPUT CHARACTERISTICS The supply for the logic and overload protection is taken from the input Limits are for 40 C lt Tm lt 150 C typicals are for T 25 C unless otherwise specified srweot paramere CONDITIONS mn TWP max unr 2 4 V Input threshold voltage Vbs 5 V b 1 mA 0 6 Input supply current normal operation Input supply current protection latched Protection reset voltage reset time t 100 us Latch reset time Vist 5 V Vigo lt 1 V Input clamping voltage lI 1 5 mA Input series resistance to gate of power MOSFET SWITCHING CHARACTERISTICS Tm 25 C Vbo 13 V resistive load R 4 Q Refer to waveform figure and test circuit saa e V Turn off delay time Vs 0 Fall time 1 The input voltage below which the overload protection circuits will be reset 2 Not directly measureable from device terminals May 2001 4 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3119 P MECHANICAL DATA Plastic single ended package heatsink mounted 12. Jun Thermal resistance Rin j mb Junction to mounting base 1 25 1 39 K W 1 Prior to the onset of overvoltage clamping For voltages above this value safe operation is limited by the overvoltage clamping energy 2 A higher T is allowed as an overload condition but at the threshold T 7o the over temperature trip operates to protect the switch 3 All control logic and protection functions are disabled during conduction of the source drain diode May 2001 2 Rev 1 000 Philips Semiconductors Logic level TOPFET OUTPUT CHARACTERISTICS Limits are for 40 C lt Tm lt 150 C typicals are for T 25 C unless otherwise specified srweot paramere CONDITIONS mn TYP max Jun 60 70 5 100 0 1 10 Off state Vicuypss Drain source clamping voltage loss Drain source leakage current On state Rosny Drain source resistance OVERLOAD CHARACTERISTICS Product specification PIP3119 P Vis OV lp 10 mA low 4 A t lt 300 us 6 lt 0 01 Vos 40 V Tm 29 C Vis 2 4 4 V t lt 300 us lt 0 01 lom 10 A Tmo 25 C 52 22 28 Vis 5 V Tm 25 C unless otherwise specified SYMBOL PARAMETER eonDmons MIN TP MAX UNIT Short circuit load Drain current limiting Overload protection Overload power threshold Tose Characteristic time na Overtemperature protection Tio Threshold junction temperature Vos 13 V 4 4 V lt Vs lt 5 5 V 40 C lt
3. mounting hole 3 leads SOT78B mounting base 2 DIMENSIONS mm are the original dimensions UNIT Ay bl by c D Dy E 45 1 39 085 1 3 mm a4 4 27 0 60 1 0 0 7 15 8 6 4 10 3 0 4 15 2 5 9 9 7 Notes 1 The positional accuracy of the terminals is controlled within zone Ly max 2 Mounting base configuration is not defined within the dimensions E and D OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION SOT78B E 01 02 22 ISSUE DATE Fig 2 SOT78B TO220AB package pin 2 connected to mounting base 1 Refer to mounting instructions for SOT78 TO220 envelopes Epoxy meets UL94 VO at 1 8 Net mass 2 g May 2001 5 Rev 1 000 Philips Semiconductors Product specification Logic level TOPFET PIP3119 P DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS STATUS Objective data Development This data sheet contains data from the objective specification for product development Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification Supplementary data will be published at a later date Philips Semiconductors reserves the right to change the specif
4. Philips Semiconductors Product specification Logic level TOPFET PIP3119 P DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin plastic package APPLICATIONS General purpose switch for driving e lamps e motors e solenoids e heaters FEATURES TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input e Low operating input current permits direct drive by micro controller e ESD protection on all pins e Overvoltage clamping for turn off of inductive loads PINNING SOT78B DESCRIPTION input drain source drain May 2001 QUICK REFERENCE DATA SYMBOL PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain source on state resistance Input supply current Visp OV FUNCTIONAL BLOCK DIAGRAM LOGIC AND PROTECTION Fig 1 Elements of the TOPFET PIN CONFIGURATION SYMBOL TOPFET _ Z JH Front view MBL292 POWER MOSFET SOURCE Rev 1 000 Philips Se
5. ication without notice in ordere to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification Philips Semiconductors reserves the right to make changes at any time in order to improve the design manufacturing and supply Changes will be communicated according to the Customer Product Process Change Notification CPCN procedure SNW SQ 650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor impl
6. miconductors Product specification Logic level TOPFET PIP3119 P LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System IEC 134 smo Jpanaveren ____ eowomons an ma vr Continuous drain source voltage Continuous drain current Vis 5 Vi Trp 25 C Continuous drain current Vis 5 V Trp lt 121 C Continuous input current Repetitive peak input current 5 lt 0 1 tp 300 us Total power dissipation Tmo lt 25 C Storage temperature Continuous junction temperature normal operation Lead temperature during soldering ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MN M Ve Electrostatic discharge capacitor Human body model voltage C 250 pF R 1 5 KQ OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients svmeo Parameter Jeonomons mm max UNIT Inductive load turn off lpm 20 A Vbp lt 20 V Non repetitive clamping energy Tmo lt 25 C 350 mJ Repetitive clamping energy Tmo lt 95 C f 250 Hz 45 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin TOPFET can protect itself from two types of overload overtemperature and short circuit load SYMBOL PARAMETER REQUIRED CONDITION MIN MAX UNIT Drain source voltage 4V lt Vis lt 5 5 V o faj Se THERMAL CHARACTERISTIC svmeo paramere GONDMIONS mn WP max
7. y any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1 Please consult the most recently issued datasheet before initiating or completing a design 2 The product status of the device s described in this datasheet may have changed since this datasheet was published The latest information is available on the Internet at URL http Awww semiconductors philips com May 2001 6 Rev 1 000
Download Pdf Manuals
Related Search