Cypress MoBL CY62148BN User's Manual
Contents
1. Power Applied 55 C to 125 C ly Vol V ive GND 0 Ambient iid 0 T ed GND 0 5V to 7 0V Range Temperature Vec oltage Applied to Outputs in High Z State 0 5Vto Vcg 0 5v Commercial 0 C to 70 C 4 5V 5 5V DC Input Voltagel 0 5Vio Voc 0 5v Industrial 40 C to 85 C Electrical Characteristics Over the Operating Range CY62148BN 70 Parameter Description Test Conditions Min Typ Max Unit Vou Output HIGH Voltage Voc Min lou 2 1 mA 2 4 V VoL Output LOW Voltage Voc Min Io 2 1 mA 0 4 V Vin Input HIGH Voltage 2 2 Voc 40 3 V Vit Input LOW Voltage 0 3 0 8 V lix Input Leakage Current GND lt Vi Voc 1 1 LA loz Output Leakage Current GND lt V x Vcc Output Disabled 1 1 uA lec Vcc Operating f fmax l tnc Com l Ind l 12 5 20 mA Supply Current f 1MHz QUT aii 25 mA cc Max Isg1 Automatic CE Max Vcc CE lt Viy Com l 1 5 mA Power Down Current Vins Vigor Vins Vy Ind l TTL Inputs f fuax Ispo Automatic CE Max Vcc Com l 4 20 pA Power Down Current CE lt Voc 0 3V Ind CMOS Inputs Vin lt Vec 0 3V or Vin lt 0 3V f z0 Capacitance Parameter Description Test Conditions Max Unit Cin Input Capacitance TA 25 f 1 MHz 6 pF Cour Output Capacitance Vcc 5 0V 8 pF AC Test Loads and Waveforms R1 18000 R1 18000 5V 5V ALL INPUT PULSES2. luzwE tLzwe Truth Table CE OE WE 1 O 1 0 Mode Power H X X High Z Power Down Standby lag L L H Data Out Read Active loc L X L Data In Write Active loc L H H High Z Selected Outputs Disabled Active loc Ordering Information Speed Package Operating ns Ordering Code Diagram Package Type Range 70 CY62148BNLL 70SC 51 85081 32 lead 450 Mil Molded SOIC Commercial CY62148BNLL 70SXC 51 85081 32 lead 450 Mil Molded SOIC Pb Free CY62148BNLL 70ZC 51 85095 32 lead TSOP Il CY62148BNLL 70ZXC 51 85095 32 lead TSOP II Pb Free CY62148BNLL 70ZRC 51 85138 32 lead RTSOP II CY62148BNLL 70S 51 85081 32 lead 450 Mil Molded SOIC Industrial CY62148BNLL 70SXI 51 85081 32 lead 450 Mil Molded SOIC Pb Free CY62148BNLL 70ZI 51 85095 32 lead TSOP II CY62148BNLL 70ZXI 51 85095 32 lead TSOP II Pb Free CY62148BNLL 70ZRI 51 85138 32 lead RTSOP II Please contact your local Cypress sales representative for availability of these parts Document 001 06517 Rev A Page 7 of 10 Feedback gt De sacair O lt S CYPRESS 0 0 0 80 0 80 0 0 COSE MOS Package Diagrams 32 lead 450 Mil Molded SOIC 51 85081 16 1 HHHHHHHHHHHRHHHI 0 546 13 868 0 566 14 376 0 440 11 176 0 450 11 430 DIMENSIONS IN INCHES MM MIN MAX PACKAGE WEIGHT 1 42gms PART TTTTEPETTTTTTTTT __ S 53
3. High Z9 71 25 ns Notes 5 Test conditions assume signal transition time of 5 ns or less timing reference levels of 1 5V input pulse levels of O to 3 0V and output loading of the specified loL lon and 100 pF load capacitance 6 At any given temperature and voltage condition tyzcg is less than lizcE tHzoE is less than t zog and tyzwe is less than tj zwg for any given device 7 tuzoe tuzce and tyzwe are specified with a load capacitance of 5 pF as in part b of AC Test Loads Transition is measured 500 mV from steady state voltage 8 The internal write time of the memory is defined by the overlap of CE LOW and WE LOW CE and WE must be LOW to initiate a write and the transition of any of these signals can terminate the write The input data set up and hold timing should be referenced to the leading edge of the signal that terminates the write Document 001 06517 Rev A Page 4 of 10 Feedback LZ CYPRESS CY62148BN MoBL il QW PERFORM Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Typ Max Unit Vor Voc for Data Retention 2 0 V lecor Data Retention Current Com LL No input may exceed 20 uA Voc 4 0 3V Ind LL Voc Vpr 3 0V 20 pA tepar Chip Deselect to Data Retention Time CE gt Vec 0 3V 0 ns 9 f Vin gt Voc 0 3V or tr Operation Recovery Time Vin lt 0 3V tro ns Data Retenti
4. OUTPUT OUTPUT nnd 90 100 pF R2 R2 E 9900 ET 9900 GND dd INCLUDING INCLUDING JIG AND JIG AND lt 3 ns lt 3ns SCOPE a SCOPE b Equivalent to THEVENIN EQUIVALENT 6390 OUTPUT O wW O 1 77 Notes 2 Vy min 2 2 0V for pulse durations of less than 20 ns 3 T4 is the Instant On case temperature 4 Tested initially and after any design or process changes that may affect these parameters Document 001 06517 Rev A Page 3 of 10 Feedback Ny IC E I Er uN Le PERFORM Switching Characteristics Over the Operating Range CY62148BN MoBL 62148BNLL 70 Parameter Description Min Max Unit READ CYCLE tnc Read Cycle Time 70 ns taa Address to Data Valid 70 ns toHA Data Hold from Address Change 10 ns tace CE LOW to Data Valid 70 ns tDOE OE LOW to Data Valid 35 ns tizoE OE LOW to Low ZlS 5 ns tuzoE OE HIGH to High Z 7 25 ns tLzcE CE LOW to Low Z 6 10 ns luzcE CE HIGH to High Zl 71 25 ns tu CE LOW to Power Up 0 ns tro CE HIGH to Power Down 70 ns WRITE CYCLES twc Write Cycle Time 70 ns tsce CE LOW to Write End 60 ns taw Address Set Up to Write End 60 ns tHa Address Hold from Write End ns tsa Address Set Up to Write Start ns tpwe WE Pulse Width 55 ns tsp Data Set Up to Write End 30 ns tup Data Hold from Write End 0 ns ti zwE WE HIGH to Low Zll 5 ns tuzwE WE LOW to
5. 245 LEAD FREE PKG 17 32 0 793 20 142 0 817 20751 0 006 0 152 0 012 0 304 po __ 0 101 2 565 01182997 tr h ww SA J l Ue o E El j 4 VE 0 00410 102 00471485 L 0 004 0 102 0 063 1 600 i ka MIN J 0 023 0 584 i 0 014 0 355 0 039 0 990 0 020 0 508 SEATING PLANE 51 85081 B 32 Lead Thin Small Outline Package Type II 51 85095 A ILILILILILTILILTLILTI SEE DETAIL A DIMENSIONS IN MILLIMETERS MIN MAX 15 z5 3 3e TOP VIEW 1 27 BSC DETAIL A 51 85095 Document 001 06517 Rev A Page 8 of 10 Feedback CY62148BN MoBL pr om Ar CYPRESS PERFORM gt S Package Diagrams continued 32 lead Reverse Thin Small Outline Package Type II 51 85138 51 85138 More Battery Life is a trademark and MoBL is a registered trademark of Cypress Semiconductor All products and company names mentioned in this document may be the trademarks of their respective holders Document 001 06517 Rev A Page 9 of 10 O Cypress Semiconductor Corporation 2006 The information contained herein is subject to change without notice Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product Nor does it convey or imply any license under patent or other rights Cypress products are not warranted nor intended to be used for medical life support life saving critica
6. CY62148BN MoBL PERFORM Features High Speed 70 ns 4 5V 5 5V operation Low active power Typical active current 2 5 mA 9 f 1 MHz Typical active current 12 5 mA O f fma 70 ns Low standby current Automatic power down when deselected TTL compatible inputs and outputs Easy memory expansion with CE and OE features CMOS for optimum speed power Available in standard lead free and non lead free 32 lead 450 mil SOIC 32 lead TSOP Il and 32 lead Reverse TSOP Il packages 4 Mbit 512K x 8 Static RAM Functional Description The CY62148BN is a high performance CMOS static RAM organized as 512K words by 8 bits Easy memory expansion is provided by an active LOW Chip Enable CE an active LOW Output Enable OE and three state drivers This device has an automatic power down feature that reduces power consumption by more than 9996 when deselected Writing to the device is accomplished by taking Chip Enable CE and Write Enable WE inputs LOW Data on the eight I O pins l Og through l Oz7 is then written into the location specified on the address pins Ag through A48 Reading from the device is accomplished by taking Chip Enable CE and Output Enable OE LOW while forcing Write Enable WE HIGH for read Under these conditions the contents of the memory location specified by the address pins will appear on the I O pins The eight input output pins l Og through I O7 are placed in a hi
7. gh impedance state when the device is deselected CE HIGH the outputs are disabled OE HIGH or during a write operation CE LOW and WE LOW Logic Block Diagram 0 Lu a Q o Lu a O E 1 00 VO 1 02 1 03 1 04 Os 1 06 1 07 Cypress Semiconductor Corporation 198 Champion Court San Jose CA 95134 1709 e 408 943 2600 Document 001 06517 Rev A Revised August 2 2006 Feedback Pin Configuration Top View SOIC TSOP II Product Portfolio CY62148BN MoBL Top View Reverse TSOP II Power Dissipation Operating lec Standby lsg2 Vcc Range f fmax Product Min Typ Max Speed Temp Typ Max Typ Max CY62148BNLL 45V 5 0V 5 5V 70ns Com 12 5 mA 20 mA 4 uA 20 yA Ind l Note 1 Typical values are measured at Voc 5V Ta 25 C and are included for reference only and are not tested or guaranteed Document 001 06517 Rev A Page 2 of 10 Feedback e 2 CYPRESS Jj PERFORM Maximum Ratings Above which the useful life may be impaired For user guide lines not tested Storage Temperature ss 65 C to 150 C Ambient Temperature with CY62148BN MoBL Current into Outputs LOW eene 20 mA Static Discharge Voltage sess 2001V per MIL STD 883 Method 3015 Latch Up Current gt 200 mA Operating Range
8. l control or safety applications unless pursuant to an express written agreement with Cypress Furthermore Cypress does not authorize its products for use as critical components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges Feedback i SES CvPRESS 00000 CY62148BN MOBL Document History Page Document Title CY62148BN MoBL 4 Mbit 512K x 8 Static RAM Document Number 001 06517 Issue Orig of REV ECN NO Date Change 426504 See ECN NXR A 485639 See ECN VKN Description of Change New Data Sheet Corrected the typo in the Array size in the Logic Block Diagram Document 001 06517 Rev A Page 10 of 10 Feedback
9. on Waveform DATA RETENTION MODE Vor gt 2V Switching Waveforms Read Cycle No 10 11 tac ADDRESS DATA OUT PREVIOUS DATA VALID DATA VALID Read Cycle No 2 OE Controlled 121 ADDRESS tpog gt gt tLzoE HIGH HIGH IMPEDANCE IMPEDANCE Vcc SUPPLY CURRENT Notes 9 Full Device operation requires linear Voc ramp from Vpg to Vcc miy gt 100 ms or stable at Vec min gt 100 ms 10 Device is continuously selected OE CE Vj 11 WE is HIGH for read cycle 12 Address valid prior to or coincident with CE transition LOW Document 001 06517 Rev A Page 5 of 10 Feedback Si P ERFORM Switching Waveforms continued Write Cycle No 1 CE Controlled 3 twc ADDRESS R __ gt gt CE tsa tHA tpwe Write Cycle No 2 WE Controlled OE HIGH During Write 14 i RADI pr MT cara ro RSE KIRK NOTE 15 o m tHZOE Notes _ 13 If CE goes HIGH rt Aa WE going HIGH the output remains in a high impedance state 14 Data I O is high impedance if OE Vi 15 During this period the l Os are in the output state and input signals should not be applied Document 001 06517 Rev A Page 6 of 10 Feedback i aH PERFORM Switching Waveforms continued Write Cycle No 3 WE Controlled OE Low 3 141 twc mores OK c XX PL tuzcE taw tHA tsa tpwe WE AS E tup O 90999 ax A
Download Pdf Manuals
Related Search