Kingston Technology HyperX 8GB DDR3-1333
Contents
1. Bi directional Differential Data Strobe Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 On Die Termination using ODT pin Average Refresh Period 7 8us at lower than TCASE 85 C 3 9us at 85 C lt TCASE lt 95 C Asynchronous Reset PCB Height 1 180 80 00mm double sided component Continued gt gt Document No 4806269 001 A00 01 09 12 Page1 continued MODULE DIMENSIONS a 133 35 30 00 Units millimeters 18 80 15 80 11 00 8 00 0 00 0 00 D lt Ro MODULE WITH HEAT SPREADER FOR MORE INFORMATION GO TO WWW KINGSTON COM All Kingston products are tested to meet our published specifications Some motherboards or system configurations may not operate at the published HyperX memory speeds and timing settings Kingston does not recommend that any user attempt to run their computers faster than the published speed Overclocking or modifying your system timing may result in damage to computer components kingston com Document No 4806269 001 A00 Page 22. Memory Module Specifications Kingston KHX1333C9D3B1RK2 8G 8GB 4GB 512M x 64 Bit x 2 pcs DDR3 1333 CL9 240 Pin DIMM Kit DESCRIPTION Kingston s KHX1333C9D3B1RK2 8G is a kit of two 512M x 64 bit 4GB DDR3 1333 CL9 SDRAM Synchronous DRAM 2Rx8 memory modules based on sixteen 256M x 8 bit FBGA compo nents per module Total kit capacity is 8GB The SPD s are programmed to JEDEC standard latency DDR3 1333 timing of 9 9 9 at 1 5V Each 240 pin DIMM uses gold contact fingers The JEDEC electrical and mechanical specifications are as follows kingston com SPECIFICATIONS CL IDD 9 cycles Row Cycle Time tRCmin 49 5ns min Refresh to Active Refresh 160ns min Command Time tRFCmin Row Active Time tRASmin 36ns min Power Operating 1 410 W per module UL Rating 94V 0 Operating Temperature 0 C to 85 C Storage Temperature 55 C to 100 C Power will vary depending on the SDRAM used FEATURES JEDEC standard 1 5V 1 425V 1 575V Power Supply VDDQ 1 5V 1 425V 1 575V 667MHz fCK for 1333Mb sec pin 8 independent internal bank Programmable CAS Latency 9 8 7 6 Programmable Additive Latency 0 CL 2 or CL 1 clock Programmable CAS Write Latency CWL 7 DDR3 1333 8 bit pre fetch Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRSJ
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