Kingston Technology HyperX KHX1600C9D3B1K2/4G memory module
Contents
1. 95 C Asynchronous Reset PCB Height 1 180 30 00mm double sided component KRAKRBRABR KREBRKRBRBRARBAAR PERFORMANCE CLIDD 9 cycles Row Cycle Time tRCmin 49 5ns min Refresh to Active Refresh Command Time tRFCmin 110ns Row Active Time tRASmin 36ns min Power 1 800 W operating per module UL Rating 94 V 0 Operating Temperature 0 C to 85 C KKRRRKKEKEK Storage Temperature 55 C to 100 C Document No 4805603 001 A00 05 21 10 Page 1 MODULE DIMENSIONS 30 00 18 80 J 15 80 11 00 8 00 a 0 00 ValueRAM 9 S w Heatsink Assembly Document No 4805603 001 A00 54 70 133 35 goong O Page 22. OLOGY Kingston Memory Module Specification KHX1600C9D3B1K2 4G 4GB 2GB 256M x 64 Bit x 2 pes DDR3 1600MHz CL9 240 Pin DIMM Kit DESCRIPTION Kingston s KHX1600C9D3B1K2 4G is a kit of two 256M x 64 bit 2GB 2048MB DDR3 1600MHz CL9 SDRAM Synchronous DRAM memory modules based on sixteen 128M x 8 bit DDR3 FBGA components per module Total kit capacity is 4GB Each module kit has been tested to run at DDR3 1600MHz at a low latency timing of 9 9 9 27 at 1 7V to 1 9V The SPDs are programmed to JEDEC standard latency DDR3 1333MHz timing of 9 9 9 at 1 5V Each 240 pin DIMM uses gold contact fingers and requires 1 5V The JEDEC standard electrical and mechanical specifications are as follows FEATURES JEDEC standard 1 5V 0 075V Power Supply VDDQ 1 5V 0 075V 667MHz fCK for 1333Mb sec pin 8 independent internal bank Programmable CAS Latency 5 6 7 8 9 10 Posted CAS Programmable Additive Latency 0 CL 2 or CL 1 clock Programmable CAS Write Latency CWL 7 DDR3 1333 8 bit pre fetch Burst Length 8 Interleave without any limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi directional Differential Data Strobe Internal self calibration Internal self calibration through ZQ pin RZQ 240 ohm 1 On Die Termination using ODT pin Average Refresh Period 7 8us at lower then TCASE 85 C 3 9us at 85 C lt TCASE
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