Transcend 8Mb FPM 72Pin SIMM 60ns Parity Memory
Contents
1. aos Ea Ha ae RASO HT begs 1Mmx16 rs 1Mx16 Uess ae Bee ae IWE DRAM H ke DRAN Uie DRAM Cle DRAM CASO pags LCAS LCAS Mss i Fad 2 2 HCAS S S ICAS3 H ee L A0 A9 A0 A9 A0 A9 A0 A9 A0 AQ A0 AQ BE DQ0 DQ15 L DQO L DQO HERE DQ0 DQ15 a DQO E DQO RAS1 RAS 1Mx16 E RAS iiia E RAS Tii aa RAS 1Mx16 E RAS re E RAS igi O we PRAM a WE DRAM E WE DRAM H wwe PRAM iwe DRAM E WE DRAM LCAS i in LCAS o a lt lt lt lt HCAS 9 9 HCAS S e Pinouts Pin Identification Pin Pin Pin Pin Pin Pin Symbol Function No Name No Name No Name j AO A10 Address inputs DO D31 Common data inputs outputs 04 D1 28 A7 52 D25 05 D17 29 NC 53 D10 RASO RAS2 Row address strobes 06 D2 30 Vec 54 D26 CASO CAS3 Column address strobes 07 D18 31 A8 55 D11 08 D3 32 A9 56 D27 WE Write enable 09 D19 33 NC 57 D12 10 Vcc 34 RAS2 58 D28 Vcc 5 0 Volt power supply 11 NC 35 NC 59 Vcc 13 Al 37 NC 61 D13 14 A2 38 NC 62 D30 NC No connection 15 A3 39 Vss 63 D14 16 A4 40 CASO 64 D31 PD1 PD4 Presence detection pin 17 A5 41 CAS2 65 D15 18 A6 42 CAS3 66 NC 19 A10 43 ICAS1 67 PDI PD1 PD2 PD3 PD4 20 D4 44 RASO 68 PD2 21 D20 45 NC 69 PD3 60ns _ NC NC we ne 22 D5 46 NC 70 PD4 23 D21 47 WE 71 NC 24 D6 48 NC 72 Vss This technical information is based on industry standard data and tests believed to be reliable However Transcend makes no warranties ei2. RAH 10 ns Column address set up time tasc 0 ns Column address hold time tCAH 10 ns Column address to RAS lead time tRAL 30 ns Read command set up time tRcs 0 ns Read command hold referenced to CAS tRCH 0 ns 8 Read command hold referenced to RAS tRRH 0 ns 8 Write command hold time twcCH 10 ns Write command pulse width twp 10 ns Write command to RAS lead time tRWL 15 ns Write command to CAS lead time tcwL 15 ns Date set up time tbs 0 ns 9 Date hold time tDH 10 ns 9 Refresh period tREF 16 ms Write command set up time twcs 0 ns 7 CAS setup time CAS before RAS refresh tcsR 5 ns CAS hold time CAS before RAS refresh tCHR 10 ns RAS to CAS precharge time tRPC 5 ns Access time from CAS precharge tcPA 35 ns 3 Fast page mode cycle time tpc 40 ns CAS precharge time Fast page cycle tcp 10 ns RAS pulse width Fast page cycle tRASP 60 200K ns W to RAS precharge time C B R refresh twRP 10 ns W to RAS hold time C B R refresh twRH 10 ns Transcend Information Inc 8MB 72 PIN FAST PAGE TS2M3660G DRAM SIMM With 1Mx16 5VOLT NOTES 1 2 8 9 An initial pause of 200us is required after power up followed by any 8 RAS only or CAS before RAS refresh cycles before proper device operation is achieved Input voltage levels are ViH ViL ViH min and ViL max are reference levels for measuring timing of input signals Transition times are measured between ViH min and Vi_ max and are assumed to be 5ns for all i
3. TS2M3660G 8MB 72 PIN FAST PAGE DRAM SIMM With 1Mx16 5VOLT Description The TS2M3660G is a 2M by 36 bit dynamic RAM module with 4 pcs of 1Mx16 and 8 pcs 1Mx1 DRAMs assembled on the printed circuit board The TS2M3660G is optimized for application to systems which require high density and large capacity along with compact sizing Placement O ooonoonononoonnonooog TOOT Oooo ooo oo ooonoooooonoonnonooog Torrit ooopopopoonopooonananan tormo Dononoonononoononon0n O PCB 09 5215G Features e Fast Page Mode Operation e Single 5 0V 10 power supply e 1 024 cycles refresh e Lower power consumption e CAS before RAS refresh RAS only refresh Hidden refresh Fast Page Mode Read_Modify_Write capability TS4M3260 Access time from RAS 60ns tRAC Access time from CAS 15ns tCAC Random read write cycle time 110ns tRC Page mode cycle time 40ns tPC Dimensions Side Millimeters Inches 107 95 0 20 4 520 0 008 B 6 35 0 250 C 3 38 0 133 D 2 03 0 080 E 25 40 0 20 0 850 0 008 F 10 16 0 400 G 6 35 0 250 H 1 27 0 10 0 050 0 004 Transcend Information Inc 8MB 72 PIN FAST PAGE TS2M3660G DRAM SIMM With 1Mx16 5VOLT TS2M3660G Block Diagram A0 AQ A0 AQ A0 A9 A0 A9 A0 A9 D0 D35
4. erating conditions unless otherwise noted Symbol Min Max Unit Icct 980 mA Icce2 24 mA Icc3 980 mA Icc4 780 mA Iccs 12 mA Icce 980 mA IL 10 60 uA lo L 5 10 uA VoH 2 4 V VoL 0 4 V Icc1 Operation Current RAS CAS Address cycling trc min Icc2 Standby Current RAS CAS W Vik Icc3 RAS Only Refresh Current CAS ViH RAS cycling trc min Icca Fast Page Mode Current RAS ViL CAS cycling tec min Iccs Standby Current RAS CAS W Vcc 0 2V Icce CAS Before RAS Refresh Current RAS and CAS cycling trc min iL Input Leakage Current Any input 0 lt Vin lt Vcc 0 5V all other pins not under test 0 V I oL Output Leakage Current Data Out is disabled OV lt Vout lt Vcc Vou Output High Voltage Level loH 5mA Vor Output Low Voltage Level lo 4 2mA Note Icc1 Icc3 Ilcc4 and Icce are dependent on output loading and cycle rates Specified values are obtained with the output open Iccis specified as an average current In lcci and Iccs3 address can be changed maximum once while RAS Vi In Icca address can be changed maximum once while RAS Vu In Icc4 address can be changed maximum once within one Fast page mode cycle time tPc Transcend Information Inc 8MB 72 PIN FAST PAGE TS2M3660G DRAM SIMM With 1Mx16 5VOLT CAPACITANCE TA 25 C Vcc 5V f 1MHz Item Symbol Min Max Unit In
5. nputs Measured with a load equivalent to 2 TTL loads and 100pF Operation within the trcp max limit insures that trac max can be met trcp max is specified as a reference point only If tRcp is greater than the specified trcp max limit then access time is controlled exclusively by tcac Assumes that trcp trcp max This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VoH or VoL twcs is non restrictive operating parameter It is included in the data sheet as electrical characteristics only If twcs twcs min the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle Either trcH or tRRH must be satisfied for a read cycle These parameters are referenced to the CAS leading edge in early write cycle 10 Operation within the trap max limit insures that trac max can be met trap max is specified as reference point only If trap is greater than the specified trap max limit then access time is controlled by taa Transcend Information Inc
6. put capacitance A0 A11 Cini 84 pF Input capacitance WE Cin2 104 pF Input capacitance RASO RAS2 Cina 54 pF Input capacitance CASO CAS3 Cina 44 pF Data input output capacitance D0 D31 Coa 30 pF AC CHARACTERISTICS 0C S TAS70 Vec 5 0V 10 See notes 1 2 Test condition Vih Vil 2 4 0 8V Voh Vol 2 4 0 4V output loading CL 100pF Parameter Symbol Min Max Unit Note Random read or write cycle time tRC 110 ns Access time from RAS tRAC 60 ns 3 4 Access time from CAS tcac 15 ns 3 4 5 Access time from column address taa 30 ns 3 10 CAS to output in Low Z telz 0 ns 3 Output buffer turn off delay toFF 0 15 ns 6 Transition time rise and fall tT 3 50 ns 2 RAS precharge time tRP 40 ns RAS pulse width tRAS 60 10K ns RAS hold time tRSH 15 ns Transcend Information Inc 8MB 72 PIN FAST PAGE TS2M3660G DRAM SIMM With 1Mx16 5VOLT AC CHARACTERISTICS 0C S TAS70 C Vec 5 0V 10 See notes 1 2 Test condition Vih Vil 2 4 0 8V Voh Vol 2 4 0 4V output loading CL 100pF Parameter Symbol Min Max Unit Note CAS hold time tcsH 60 ns CAS pulse width tcas 15 10K ns RAS to CAS delay time tRCD 20 45 ns 4 RAS to column address delay time tRAD 15 30 ns 10 CAS to RAS precharge time tcrP 5 ns Row address set up time tasR 0 ns Row address hold time t
7. ther expressed or implied as to its accuracy and assumes no liability in connection with the use of this product Transcend reserves the right to make changes in specifications at any time without prior notice Transcend Information Inc 8MB 72 PIN FAST PAGE TS2M3660G DRAM SIMM With 1Mx16 5VOLT ABSOLUTE MAXIMUM RATINGS Item Symbol Rating Unit Voltage on any pin relative to Vss Vin Vout 1 to 7 0 V Voltage on Vcc supply relative to Vss Vcc 1 to 7 0 V Storage temperature Tstg 55 to 150 C Power dissipation Pp 12 W Short circuit output current los 50 mA Note Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet Exposure to absolute maximum rating conditions for intended periods may affect device reliablilty RECOMMENDED OPERATION CONDITIONS Voltage referenced to Vss Ta 0 to 70 C Item Symbol Min Typ Max Unit Supply Voltage Vcc 4 5 5 0 5 5 V Ground Vss 0 0 0 V Input High Voltage VIH 2 4 Vcc V Input Low Voltage VIL 40 0 8 V Note 1 Vcc 2 0V at pulse width lt 20s witch is measured at Vcc 2 2 0V at pulse width lt 20ns witch is measured at Vss Transcend Information Inc 8MB 72 PIN FAST PAGE TS2M3660G DRAM SIMM With 1Mx16 5VOLT DC AND OPERATION CHARACTERISTICS Recommended op
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