User Manual
Contents
1. e O I9 11 Ceramic 6 3 V 47 51 7 Ceramic 6 3 V 33 36 3 Ceramic 6 3 V 1 At Cye gt 33 pF it is recommended that a 1 Q resistor is connected in series with Cve 2 SIM 1 2 C79000 G8976 C215 01 0 1 tolerance and TK 15 ppm K to achieve 3 tolerance of the circuit ow N Technical Specifications etn Parnes all Ts Me VCCA Supply voltage 4 75 5 25 em used VCCD VCC internally Capacitance at 3 6 uF Tantalum VCC pin TAJA105K016R TAJA335K016R Cvm eem at 100 110 nF Ceramic 6 3 V eem pin XTO XT1 Clock generation 1 99 MHz Tolerance 0 5 2 MHz plus the vendor specific initial tolerance for the p value XTO XT1 Voltage at XTO puso 0 AE and XT1 Cxro Cxn Load 10 asi f capacitance sac ees Y VOM GM Input signal low VCM GIM Input signal hysteresis VCM GIM Input current 10 pA VIN GND to VCCD Values for supply VREG Namefpin Parameters Min Typ Mex Unit Remark VREG Desired voltage 1 94 2 2 06 V oe 3 at VREG 2V VREG Desired voltage 5 15 ne 3 at VREG 5 V I REDE rr m Capacitance at 4 10 of 22 10 UF Tantalum VREG pin TAJA475K016R TAJA226K016R SIM 1 2 38 C79000 G8976 C215 01 Technical Specifications Values for DC DC activation Cameipim Parameters Min Typ Max Unt Remark Terminal 2 VE V Internally or voltage S1 and externally limited S2 see section 2 4 3 Load2. This manual supports you during the development of a Fieldbus Medium Attachment Unit MAU for 31 25 Kbps in compliance with IEC 61158 2 with the SIM 1 2 Siemens IEC MAU and a small number of external components Which Data Link Layer protocol is implemented is irrelevant In conjunction with a suitable communication controller for example SPC 2 4 devices with a fieldbus attachment supplied with power locally or over the bus can be implemented with little effort This manual serves both as a function manual and as a data sheet for the developer of the electronics Aims With the aid of this manual you will be able to develop a fieldbus medium attachment unit MAU for 31 25 Kbps for your application with little effort using the SIM 1 2 We assume that you are familiar with the relevant standards and specifications Certification The products and systems listed in this document are manufactured and marketed using a quality management system complying with DIN ISO 9001 and certified by DQS certificate register no 2613 The DQS certificate is recognized in all IQNet countries Reg No 2613 SIM 1 2 C79000 G8976 C215 01 Preface SIM 1 2 6 C79000 G8976 C215 01 Contents SIM 1 2 Area of Application and Characteristics nn nn nn nn nun nn nn nun 9 1 1 OVEIVIEWER ESS step m e unn desde im LM RER IS 9 1 2 Essential Characteristics aeae a e a nnne nnne rnnt nnne 11 Functional Description of
3. SENSEM SENSEP Current 0 75 Bypass current SENSEP pin SENSEM Current SENSEM pin Rsensep Actual current 10 RsgNsEM value detection 0 1 96 tolerance and TK 15 ppm K to achieve 3 tolerance of the circuit CTR Control voltage at base of T1 CTR Control current at base of T1 RXIN Voltage at RXIN RI RXIN Input resistance 100k of the input stage Minimum input resistance of the receiver stage NN NEL Compensation current BW NM SIM 1 2 36 C79000 G8976 C215 01 Values for supply VE VE Voltage at shunt 6 111 VESRD regulator PDWNXN Prewarning threshold for PDWNXN RESETXN Reset threshold for RESETXN VE Own current requirements entire SIM 1 2 VESRD Load current at shunt regulator VE Technical Specifications 6 3 6 489 V Tolerance 3 0 9 V VEso 0 9 V VREGsouL 860 pA DC DC function deactivated 52 5 mA Considered as mean 100 10 Tantalum 1 Typ TAJA475K016R TAJC107K010R C Capacitance at VE 4 7 10 RRIREF Reference current generation Rrvecve Reference voltage generation for VCC and VE Rrvrec Reference voltage generation for minimum value VREG 2V Rrvrec Reference voltage generation for maximum value Vres 5 V Rr soLL Bus current setting for minimum value Isus 2 mA RRIsoLL Bus current setting for maximum value lBus 50 mA 9 1 5 1 0 2 5 100 2 5
4. C79000 G8976 C215 01 Functional Description of the SIM 1 2 2 4 4 Dimensioning the Backup Capacitor SIM 1 2 To allow a correct startup behavior the set constant current consumption and the backup capacitors Cyg and Cpcpc must be matched up Secondary capacitor Cpcpc The dimensions of the secondary capacitor of transformer Cpcpc must not be too large depending on the constant current Cpcpc BUS 0 5 pF mA Capacitor Cye The following applies to capacitor Cwe Cve gt 2 U i Cpcpc where Vpcpc VE Capacitor Cyrec The following applies for capacitor Cyngc Cvrec S 47 UF C79000 G8976 C215 01 27 Functional Description of the SIM 1 2 2 5 Internal Functions 2 5 4 Impedance Converter The impedance converter current modulator and current control function units together along with a few external components and the internal shunt regulator form the high impedance decoupling of the auxiliary power from the bus cable 2 5 2 Shunt Regulator The shunt regulator derives a stabilized voltage VE from the constant current The part of the total current not required by external loads is diverted to GND The load current can be taken in any proportions from the power supplies VREG and the DC DC converter external transformer necessary 2 5 3 Signal Filter The combined input high pass band pass and low pass filter suppresses disturbances outside of the signal transmission range from 7 kHz to 40 kHz The band pass and low pas
5. VM pin must be backed up to GND by capacitor Cym 2 3 10 Oscillator XTO XT1 Pins XTO and XT1 are provided for the connection of a 2 MHz quartz ceramic oscillator Further external components capacitances are required depending on the quartz ceramic oscillator used With external clock supply XTO is connected to GND and XT1 is used as an input XTO and XT1 may each be loaded with a capacitance of x 47 pF SIM 1 2 C79000 G8976 C215 01 21 Functional Description of the SIM 1 2 2 3 11 Digital Interface TXE TXS RXA RXS Possible interconnection between the external interface circuit for example SPC 4 2 and the SIM 1 2 e Direct connection of TXE TXS RXA RXS with the digital input and output drivers of an external communication controller for the external application electronics e Connection of TXE TXS RXA RXS with the digital input and output drivers of an external communication controller galvanically isolated over optocouplers for the external application electronics e Interfacing using the power saving galvanic signal isolation over two optocouplers TXS and RXS 2 3 12 Test and Manufacturing Pins TD TO T1 T2 TA For the SIM 1 2 to function perfectly the test and manufacturing pins TD TO T1 T2 and TA must be connected to GND 2 3 13 Mode Setting GIM and VCM Galvanic Isolation Mode GIM This input is used to activate or deactivate the power saving interface to the application The power saving
6. VREG reiini neeaaeo aE AEREA ap e Aa Ee aAa aeria eish 24 2 4 2 SPOWErSUPDIY VE nn nen een 25 2 4 3 DC DC Converters S1 and 82 sss eee 26 2 44 Dimensioning the Backup Capacitor ssssssssseem 27 2 5 Internal F nctlons tpe er ed Ha ern eren ad 28 2 5 1 Impedance Converter ta b o E M EM t b t DIES RR Ode 28 2 5 2 ShuntiRegulator itc temere et ere e ERREUR 28 2 5 9 Signal Eltern oe ee een 28 2 5 4 Comparator Carrier Detector esesesessseseseseseeen eene 29 29 9 Jabber Control ect Tae 29 2 516 Wave Shaper unde zen iin eines 29 2 9 7 Intertace bogleo i ertet edem ute e Saget 30 Technical Specifications cciccciccccecccccccec cies ceecccevecectceecesccecdieacccucciecceccdesecscecssedececsiseecess 31 3 1 Limit Values ERE e eO inh tele eda 32 3 2 Normal Operating Conditions and Characteristic Data eeen 35 3 3 Housing MEPQ 4QO 5 inier Et eiui 41 Application Examples an aa aaa aaaea nia apaan a aaea a saraaa cei nne Cra RR ER XE ERR ERR n Ra a ERR S 45 4 1 Interface LOGIC eo rupta peo etate ay 45 4 1 1 Overview of the Interface to the Communication Controller 45 C79000 G8976 C215 01 7 Contents 4 2 Power saving Isolation with Optocouplers ececceceeeeeeeeeeecaeeeeeeeeetensees 47 4 2 1 Internal Pulse Duration Modulator eee 47 4 2 2 Internal Pulse Duration Dem
7. connector with external clock supply XTO is connected to GND VCCA P A Regulated supply voltage 5 V for analog circuit sop fe Omm ta MwtbesomededioGND ofm 8 A itl ota rece ined en GER RDCDC A Reference for startup current of the DC DC converter Input of receiver filter 39 P 40 VBUS A Connector for supplying the ASIC with the rectified bus voltage 41 GND P Am Chassis metal surface below the housing 1 l input O output P power 2 A analog D digital C79000 G8976 C215 01 15 Functional Description of the SIM 1 2 2 2 2 Pin Arrangement Pin layout in the 40 pin housing 40LD MLPQ 6x6 VJJD 2 PDWNXN RESETXN VESRD VE GND RVREG RVCCVE RISOLL RIREF SENSEM SENSEP CTR SIM 1 2 16 C79000 G8976 C215 01 Functional Description of the SIM 1 2 2 3 Basic Functions of the SIM 1 2 The basic functions described in this section are required for the minimum functionality of the SIM 1 2 2 3 1 Interfacing with the Bus Cable VBUS and GND The interfacing to the positive side of the bus system is over VBUS Externally at least one diode must be included as polarity reversal protection to avoid both destruction of the A
8. current 40 mA considered as mean Roson Of 1 5 Q Per switch switches S1 and S2 Values for Communication Interface Deme parameters win Tin Wer unt Remark RESETXN Output signal 0 8 VREG lou 1 mA PDWNXN VOH RESETXN Output signal 0 4 V lo 5 mA PDWNXN VOL RxA RxS Output signal VREG 0 1 V lou 0 1 mA VOH RxA RxS Output signal VREG 0 5 lou 0 8 mA VOH RxA RxS Output Fa lo 0 1 mA Fa RxA RxS Output signal 3 If lo 10 mA VOL and VREG 3Vto5V If lo 4 mA and VREG 2Vto3V TxE TxS Input signal VH TxE TxS Input signal VL TxE TxS Input signal 0 1 VHYST TxE TxS Input current 10 VIN GND to VREG SIM 1 2 C79000 G8976 C215 01 39 Technical Specifications Values for environmental influences _Namelpin Parameters Min Typ Max Unit Remark Top Ambient 40 85 C In operation temperature SIM 1 2 40 C79000 G8976 C215 01 Technical Specifications 3 3 Housing MLPQ 40 Drawing of the Housing N IN Gi PANT ir tri Fri HH rd tout gd t fi M abl b BTM VIEW lt SEATING e lt SIDE VIEW SIM 1 2 C79000 G8976 C215 01 41 Technical Specifications Housing Dimensions The following table lists the dimensions of the housing in millimeters Typical SIM 1 2 42 C79000 G8976 C215 01 Technical Specifications Manufacturing Notes SIM 1 2 Caution 1 The ESD protection measures must always be adher
9. pulse duration modulation is used both for the inputs demodulator on TXS and for the output modulator on RXS The power saving pulse duration modulation is not active SIM 1 2 22 C79000 G8976 C215 01 Functional Description of the SIM 1 2 Voltage Converter Mode VCM This input is used to activate or deactivate the DC DC converter controller vom Meng The DC DC converter is active and controls the outputs S1 S2 Low The DC DC converter is disabled the outputs S1 S2 are switched with high impedance 2 3 14 Voltage Monitoring Voltage Monitor The voltage monitor monitors the internally generated voltages VE VCC and VREG RESETXN pin At the RESETXN pin the SIM 1 2 signals the end of the startup phase with a change from low to high This means that all required power supplies have reached their desired value If the VREG voltage sinks below 90 of the desired value VREGgo L a change from high to low at the RESETXN pin signals the reset status of the chip PDWNXN pin At the PDWNXN pin the SIM 1 2 signals an interruption of the bus supply with a short low pulse Controlled by this signal the connected application can initiate a power down sequence If the VE voltage sinks below 90 of the desired value VEso the prewarning PDWNXN PDWNXN changes to logic 0 for 10 us is output Communication over TxE TxS RxA and RxS is not affected by this SIM 1 2 C79000 G8976 C215 01 23 Fu
10. with devices or components from other manufacturers which have been approved or recommended by Siemens This product can only function correctly and safely if it is transported stored set up and installed correctly and operated and maintained as recommended Before you use the supplied sample programs or programs you have written yourself make certain that no injury to persons nor damage to equipment can result in your plant or process EU Directive Do not start up until you have established that the machine on which you intend to run this component complies with the directive 98 37 EEC Correct Usage of Software Products AN SIM 1 2 Note the following Warning This software may only be used for the applications described in the catalog or the technical description and only in connection with software products devices or components from other manufacturers which have been approved or recommended by Siemens Before you use the supplied sample programs or programs you have written yourself make certain that no injury to persons nor damage to equipment can result in your plant or process C79000 G8976 C215 01 Prior to Commissioning Prior to commissioning note the following warning Caution Prior to startup read the relevant documentation For ordering data of the documentation please refer to catalogs or contact your local Siemens representative 4 SIM 1 2 C79000 G8976 C215 01 Preface Purpose of manual
11. 0 KO lt Rusou lt 2 5 MQ the capacitor Cye must be dimensioned in the permitted range according to the pulse load by the application or the DC DC converter Caution 1 To achieve the minimum bus current tolerance of 3 resistors with a tolerance of lt 0 1 must be used As an alternative the bus current can be matched over Rnisou see also tolerance calculation in section 2 3 7 Reference Circuit RIREF RVCCVE RVREG RISOLL Caution 2 Transistor T1 and its cooling surface must be designed according to the set bus current consumption and the resulting dissipation loss SIM 1 2 C79000 G8976 C215 01 Functional Description of the SIM 1 2 Input Impedance To achieve the impedance of 3 kO required by IEC 61158 2 at the bus attachment terminals in conjunction with the transistor PZT3906 the EMC capacitances parallel to the bus connector must be limited as follows 2 MA lt Igus lt 15 MA Cgyc lt 500 pF Starting at an lgys current of 15 mA the capacitance of Cgyc must be reduced continuously This results in a curve with the following vertices Loo ls ewe Cenc lt 340 pF As of a current of 2 40 mA Cemc remains 0 pF At Igus currents gt 40 mA the required impedance at 39 kHz for bus voltages Ugus lt 12 V is not achieved System Stability We recommend the transistor PZT3906 If you set the Igus current to 2 30 mA you should use an additional L SENSE inductor of 1 uH This avoids self excitation a
12. C DC converter this should be wired as short as possible to the switches S1 and S2 and the power supply VE Feldbus SIM 1 2 C79000 G8976 C215 01 57 Application Examples SIM 1 2 58 C79000 G8976 C215 01 Putting into Operation 5 5 1 Putting into Operation for the First Time Description Before putting into operation for the first time check the correct wiring and components according to the block diagrams In particular check the reference resistances Rrirer Ruisouu Rrvccve and Revrec and the connection VE VESRD and the connection VCCA VCCD Caution An interruption at the reference resistances Rrirer and Rp so during operation can lead to damage destruction of the SIM 1 2 SIM 1 2 C79000 G8976 C215 01 59 Putting into Operation 5 2 Test Points Description 60 To check the functionality the following measurements can be made during operation Measured Description value Voltage at pin VE VESRD 6 3 V Voltage at pin VCCA VCCD 5 0 V VREG Voltage at VREG pin according to Rrvrec tolerance IBUS Total current consumption according to Rp soL tolerance Check whether or not the voltages and the current are within the tolerance range resulting from the tolerance of the selected resistors from the tolerance calculation in section 2 3 7 SIM 1 2 C79000 G8976 C215 01 Appendix A 6 1 References 1 IEC 61158 2 Digital data communications for measurement and control Fieldbus for u
13. SIC and return feed to the bus cable if a short circuit occurs The interfacing to the negative side of the bus system is over GND As an alternative to a diode as polarity reversal protection a rectifier bridge can be used as polarity reversal protection and feedback protection 2 3 2 Control Loop CTR This output controls the base of the external PNP transistor T1 that supplies the local consumer connected to VE and switches to output signal to the bus by modulating the current consumption 2 3 3 Current Sensing by SENSEP and SENSEM The shunt resistor Rsensep is used to sense the current available as supply current over the collector The current fed past Rsensep over VBUS and CRT is sensed by the shunt resistor Rsensem The sum of the two currents corresponds to the current taken from the bus SIM 1 2 C79000 G8976 C215 01 17 Functional Description of the SIM 1 2 2 3 4 Bus Connector Bus Current Consumption 18 Using the resistor Rusoi the mean current taken from the bus is set from 2 mA to 50 mA In the range from 2 mA to 10 mA the SIM 1 2 automatically operates in the asymmetric modulation mode This means that to transmit the mean current consumption is raised to 10 mA and then lowered again to the set value The set mean bus current must always be at least 1 mA higher than the current transferred to the application over VREG and VE including DC DC Rrisort MO 0 05 Isus mA Conditions for Rp so 10
14. SIEMENS SIMATIC NET ASIC SIM 1 2 Function Manual Release 02 2007 C79000 G8976 C215 01 Preface Area of Application and Characteristics Functional Description of the SIM 1 2 Technical Specifications Application Examples Putting into Operation Appendix Classification of Safety Related Notices This document contains notices which you should observe to ensure your own personal safety as well as to protect the product and connected equipment These notices are highlighted in the manual by a warning triangle and are marked as follows according to the level of danger Danger indicates that death severe personal injury will result if proper precautions are not taken gt Warning indicates that death severe personal injury can result if proper precautions are not taken gt Caution gt with a warning triangle indicates that minor personal injury can result if proper precautions are not taken Caution without a warning triangle indicates that damage to property can result if proper precautions are not taken Notice indicates that an undesirable result or status can result if the relevant notice is ignored Note highlights important information on the product using the product or part ofthe documentation that is of particular importance and that will be of benefit to the user Trademarks SIMATIC SIMATIC NET SIMATIC NET Networking for Industry SINEC SCALANCE a
15. all Manchester encoders decoders in compliance with IEC 61158 2 As a result the SIM 1 2 can also be connected to all fieldbus controllers that already include a Manchester encoder decoder in compliance with IEC 61158 2 Jabber inhibit jabber control prevents a node from transmitting indefinitely on the bus Sender with current modulator for bias currents Asymmetric modulation from 2 mA to 10 mA Symmetric modulation from 10 to 50 mA Power optimized electrical isolation The SIM 1 2 supports simple and power minimized galvanic isolation between MAU and user electronics by means of SIM 1 2 Integrated voltage converter for power optimized unregulated voltage transformation external transformer and rectifier are required Integrated interface logic for simple and current saving galvanic signal isolation current consumption in permanent operation lt 2 mA 2 optocouplers and suitable controller interface logic are necessary on the controller C79000 G8976 C215 01 11 Area of Application and Characteristics Properties of the SIM 1 2 12 Minimum space required for the MAU interface Minimum number of external components Little space required due to SMD housing MLPQ 40 Ambient temperature range 40 to 85 C Low current consumption for own supply Bus voltage 9 V to 32 V functional range Stabilized output voltage for the user Can be set in the range from 2 V to 5 V tolerance 3 Up to 50 mA tota
16. and C2 a delay of the reference voltage in the active state The capacitor C1 decouples the supply voltage of the optocoupler from the communication controller supply voltage Vcc Example of Demodulator Input Evaluation Ausgang Optokoppler nach Koppelkondenstor C 1n TxSD 56k 2 SIM 1 2 C79000 G8976 C215 01 51 Application Examples 4 3 Signal Assignment Description On the SIM 1 2 the signals are assigned in compliance with the IEC 61158 2 standard The figure below describes the assignment of the logical state of TxS to the signal adjustment VBus VBus or the assignment of VBus VBus to RxS Signal Assignment SIM 1 2 52 C79000 G8976 C215 01 ion Isolati Ic Application Examples th Galvan 2w 2 and SPC 4 f the SIM 1 t Examples iagram o Circui Block D 1 4 4 4 4 HAG lt Yeuminpuineas yu 0je1 seute BunpueMus req Bunyeysseqznyos ga sq as A 0 ool ZN 5 snqp e 7 woo 9g 30230 4 za doze Agu ND 3 323 23 Buny smsne SUL Teubts dasnas 4 euosrueuAp I aa nosia 4 10819 I NXNAROd A gyrzv 53 C79000 G8976 C215 01 SIM 1 2 Application Examples 4 4 2 Diagram of the SIM 1 2 and SPC 4 2 without Galvanic Isolation O3HAH U snap
17. ce resistors is included in the tolerance of the bus current You can achieve the minimum tolerance of 3 with resistors that have a tolerance of 0 1 As an alternative the bus current can be adjusted over Rasoir SIM 1 2 C79000 G8976 C215 01 Functional Description of the SIM 1 2 Tolerance Calculation The tolerance of Igus Ve and Vrec is made up the tolerance of the chip and the tolerance of the reference resistors used Rrirer Ravecve Rrvrec Rr soLL Rsensem and Rsensep The precise relationships can be seen in the following formulas dieus ds m 1 2 drrisout drrirer Baa Bro 1 drsensep 1 Bro 1 drsensem dve dsm1 2 drrvecvel drriree dvrec ds m 1 2 drrvrec dRRIREF The tolerance of the parameters of Isus Ve and Vrec over the entire temperature range assuming a circuit with almost ideal reference resistors is 3 it therefore follows that dsm 1 2 3 96 2 3 8 Interface and Application Voltage VREG With VREG there is an operating voltage regulated by Rrvrec in the range from 2 V to 5 V for local loads This is also the power supply for the outputs and inputs of the digital interface TXE TXS RXA RXS RESETXN PDWNXN 2 3 9 Internal Power Supply VCCD VCCA VM The two pins VCCD and VCCA must be connected directly with each other and backed up to GND over the capacitor Cycc No power for local loads may be taken from the internal power supply VCC The
18. dges causing unacceptable signal distortions It is possible to minimize the distortion if the when the switching times of the comparator are close to the beginning of the signal changes This however requires different switching thresholds dependent on the edge or signal directions A suitable adaptation of the switching threshold can be implemented if this is derived from the wanted signal itself The principle behind this dynamic input signal evaluation is shown in the figure below At the same time the reference signal of a comparator is obtained from the wanted signal over a damping element a and a delay element Circuit Principle of Input Evaluation Wanted signal Reference signal QUI Damping Comparator SIM 1 2 48 C79000 G8976 C215 01 Application Examples Description of the Signal Evaluation The leading edge on an incoming pulse triggers a time stage with a run time of t3 The following time condition applies t1 t3 t2 On expiry of t3 a scan for pulse length t1 or t2 is performed Depending on the detected pulse length t1 or t2 the flip flop FF 1 is set to L or H The output of the flip flop therefore corresponds to the serial data signal The output signal of a further flip flop FF 2 is ORed with signal If two short pulses occur one after the other both flip flops are reset The OR operation results in an L which is detected as the end of the static si
19. ed to for all electronic components Caution 2 The SIM 1 2 is a component at risk of cracking that must be handled as such Before processing the SIM 1 2 it must be subjected to a drying process if the chip has been stored for more than 168 hours without being dry packed according to JEDEC J STD 020C Moisture Sensitivity Level 3 The component must then by dried at 125 C for 24 hours and processed within 48 hours This drying may only be performed once due to the solderability of the component according to JEDEC J STD 020C Moisture Sensitivity Level 3 The SIM 1 2 is approved for infrared reflow with the lead free reflow profile according to JEDEC JSTD 020C The lead free infrared reflow process must not exceed a maximum temperature of 260 C on the surface of the package and may be 260 C for only three seconds Over a period of maximum 150 seconds the temperature of the package surface may exceed 217 C according JEDEC J STD 020C Lead finish Sn C79000 G8976 C215 01 43 Technical Specifications 44 SIM 1 2 C79000 G8976 C215 01 Application Examples 4 4 1 Interface Logic 4 1 4 Overview of the Interface to the Communication Controller The interface logic forms the interface to the communication controller of the user electronics As shown in the following diagram three modes are possible e Without galvanic isolation If galvanic isolation of the bus interface SIM1 2 from the application specific electron
20. eive functions including jabber control and the high impedance decoupling of auxiliary energy from the bus cable It provides a selectable stabilized power supply and also allows the setup of an galvanically isolating power supply with a few passive components As an alternative to the standard signal interface TxS TxE RxS RxA the ASIC includes special interface logic that provides low power consumption and an easy to implement interface for galvanic signal isolation SIM 1 2 C79000 G8976 C215 01 Area of Application and Characteristics Block diagrams of examples 10 The following diagram illustrates examples of SIM 1 2 applications Bus Speisegerat Feldbus roller roller Application Conti roller Application Controller Sensor Cont Application roller Sensor SIM 1 2 C79000 G8976 C215 01 Area of Application and Characteristics 1 2 Essential Characteristics Description The essential characteristics of the SIM 1 2 IEC MAU are listed below Characteristics of fieldbus attachment Using the SIM 1 2 a fieldbus attachment can be implemented with the following characteristics The SIM 1 2 IEC MAU supports fieldbus attachments for 31 25 Kbps in compliance with IEC 6 1158 2 The SIM 1 2 can be connected to
21. emy eas foros ooe Bzxacrvs DaDo y saes o o lt Transistor PNe Pzrse Murat ste 2 M amp Transfor Transformer mer At Cye gt 33 pF it is recommended that a 1 Q resistor is connected in series with Cyg SIM 1 2 C79000 G8976 C215 01 55 Application Examples 4 4 4 Notes on the Transistor 56 As an alternative to the recommended transistor PZT3906 the transistor PZT2907A can be used for Igus currents 2 10 mA However to increase system stability avoiding self excitation an inductor 3 3 uH must be included in series in addition to the RSENSEP measuring resistor see section 2 3 3 Current Sensing by SENSEP and SENSEM Please not the following restrictions regarding EMC capacitance for the transistor PZT2907A 10 MA lt lgus lt 50 mA Cemc lt 500 pF With the transistor PZT2907A and an EMC capacitance Cgyc lt 500 pF the required impedance is achieved at 39 kHz for bus voltages Usus 2 9 V and 10 mA lt Igus lt 50 mA SIM 1 2 C79000 G8976 C215 01 Application Examples 4 5 Layout Proposal To ensure optimum functionality of the SIM 1 2 certain layout rules should be adhered to e Connection from pin CRT to base of T1 as short as possible e Connection from SENSEP over RSENSEP to capacitor CVE and connection from SENSEM over RSENSEM to capacitor CVE as short as possible and symmetrical e When using a transformer as D
22. f an internal reference voltage and at the same time measuring point for an external adjustment to RIREF target U RVCCVE 1 V 7 RVREG O Set reference for VREG 2 V to 5 V corresponds to 1 0 MO to 2 5 MO fee e a sem __ A Regulated supply voltage 6 3 V derived from U RVCCVE regulated only in conjunction with VESRD 10 VESRD Collector of the control transistor of the shunt regulator 11 VREG Regulated supply voltage 2 V to 5 V derived from VE and U RVREG eno P 0 Gon SSS rara 0 D Receive acvty ouput spe b Transmit enable input Table continued on next page 1 l input O output P power 2 A analog D digital SIM 1 2 14 C79000 G8976 C215 01 SIM 1 2 Functional Description of the SIM 1 2 Continued O A D Description 1 2 RESETXN o jD Reset output for external logic supplied by VREG 18 PDWNXN Power down Prewarning signal for external logic supplied by VREG S2 L5 Sun au oDSIBE cone en dan ln Mustbe connected to eno must be conmectestoGnd 26 VCM Voltage converter mode abi of DC DC converter 27 GIM Galvanic isolation mode enabling of power saving interface ale je p Guns PROG P D Must be connected to VCCD VCCD P ped Regulated supply voltage 5 V for digital circuit XT1 O Quartz or resonator connector with external clock supply XT1 used as input 32 XTO O Quartz or resonator
23. gnal A further triggerable delay element t4 40 s t4 100 u s resets both evaluation flip flops with the signal D in transmission pauses to suppress undefined signals being set as a result of noise Pulses 0 5 s at the comparator output will be suppressed reliably pulses 1 us will be reliably detected Principle of Demodulator Signal Evaluation Ausgang TxS1 I Ausgang TxE 1 SIM 1 2 C79000 G8976 C215 01 49 Application Examples Signal Evaluation in the Demodulator TyOuput Photocoupler TxSD ni 2 Output Comparator p Lys gt U s Output delay unit t3 Output Flipflop FF1 2 TxS1 8 Output Flipflop FF2 Output OR TxE1 D Release delay unit t4 t4 SIM 1 2 50 C79000 G8976 C215 01 Application Examples 4 2 3 External Dynamic Signal Evaluation Description of the Dynamic Input Evaluation The circuit below is an example of retrieving the useful signal from the collector signal of the optocoupler transistor for the downstream communication controller in galvanic isolation mode The two voltage dividers R2 R3 and R4 R5 move the working range of the comparator to the middle of the SPC 4 2 supply voltage Vcc The difference between the values of R2 and R4 results in an offset in the quiescent state R6 brings about a reduction in amplitude
24. i a prewarning PDWNXN low active is output PDWNXN changes to logic 0 for 10 us Communication over TxE TXS RxA and RxS is not affected by this If the VE voltage falls below 80 of VEsou the DC DC converter and the VREG regulator are turned off They start again only when VE has reached 92 again When using Cyg backup capacitors higher than 33 pF it is advisable to connect a 1 Q resistor in series with the capacitor Cye to minimize the risk of superimposing oscillations on the VE power supply C79000 G8976 C215 01 25 Functional Description of the SIM 1 2 2 4 3 DC DC Converters S1 and S2 26 These outputs are switches for setting up a DC DC converter By connecting a transformer a push pull transformer for the power supply of a non floating load can be implemented Two stages of the DC DC converter start up as soon as a stable VE supply voltage is present in other words before RESET becomes inactive To ensure that the VE supply voltage does not break down when the push pull transformer is starting up depending on the backup capacitance Cye and the set bus current the startup takes several stages The result of startup depends largely on the load on the secondary side It switches to normal operation after 20 ms with the bridge branches then only functioning as switches If the voltage at VE sinks below 80 of its desired value due to the load the startup is repeated from the beginning The voltage at the open circui
25. ics is not required the send or received signals are passed on without any processing and switched through to the user electronics Figure a The output level of RxA and RxS is adapted over the output voltage VREG as reference voltage e Conventional isolation with optocouplers To achieve galvanic isolation of the lines for data and associated signals various isolating components and circuits can be used The conventional method is a separate optocoupler each for the signals TxS TxE RxS and RxA Figure b e Power saving isolation With the power saving galvanic isolation only two optocouplers are necessary the data is then transferred using pulse duration modulated signals in the galvanic isolation mode Figure c The Galvanic Isolation Mode GIM is enabled with GIM H The send and receive functions are implemented separately so that if the physical characteristics of the bus are correct the frame sent over TXS can be received over RXS The following two sections explain this circuit in more detail SIM 1 2 C79000 G8976 C215 01 45 Application Examples Communi User IEC MAU cation Electronics Controller a Without galvanic isolation Communi User cation IEC MAU Electronics Controller b Normal isolation with photocouplers Communi Controller User IEC MAU cation Interface Electronics Controller Logic c Power saving isolation with photocouplers SIM 1 2 46 C79000 G8976 C215 01 Applicat
26. ie 3 las O93HAH 3 3A9OAMH 2 Ih 1 T10S14 4 oes Tosia 2 __ 2998 4 EL NKY 2 ze d3SN38 4 ZN WS EI aa I ASUTE y 3 2 udo z LWIS WA NIXH SnB alo d3SNJS W3SN3S 33414 10814 FADD AM 938AM JA NXNAAOd QH53A NXL3S3H SKY Svidv NFMNOLTIOHX AQV3UX SIM 1 2 C79000 G8976 C215 01 54 Application Examples 4 4 3 External Components recommended values If you want to achieve the described accuracy of the SIM 1 2 the SIM 1 2 must be connected to the external components listed in the following table o Type Rated value Tolera Temp Voltag nce coeff Rsensem Actual current value Metal layer 10 Q x0 196 15 ppm K Rsensep detection Rrirer Reference current Metal layer 1 5 15 ppm K generation Rrisot Bus current setting Metal layer 0 1 to 2 5 15 ppm K Rrvccve Reference voltage Metal layer 1 0 MQ 0 1 15 ppm K VCC VE Rvrec Reference voltage Metal layer 1 0 to 2 5 MQ 0 1 15 ppm K VREG Rex Input high pass 10 kQ 41 100 ppm K Rrococ DC DC startup 56 KQ 0 1 15 ppm K current limitation Cve Backup capacitance Tantalum 4 7 to 100 HF 10 96 10 V TAJA475K016R TAJC107K010R Cvrec Backup capacitance Tantalum 4 7 to 22 HF 10 TAJA475K016R TAJA226K016R Cvcc Backup capacitance Tantalum 1 0 to 3 3 pF x10 TAJA105K016R TAJA335K016R 5 5 5 5 D1 D4 Schottky BAT86 sp l
27. ion Examples 4 2 Power saving Isolation with Optocouplers 4 2 4 Internal Pulse Duration Modulator Description of the Signal Shaping in the Modulator In Galvanic Isolation Mode GIM H the PD modulator converts the serial signal to be transferred into a duration modulated pulse train in which the rising edge of the send signal is assigned a long pulse and the falling edge a short pulse A long and a short pulse are also generated with the edges of the static associated signal and added to the pulse train of the data signal The total signal generated in this way is used to drive the LED of an optocoupler Design Example static companion signal RxA1 data signal total signal for LED drive 1 u fue signal companion signal RxA1 SIM 1 2 C79000 G8976 C215 01 47 Application Examples 4 2 2 Internal Pulse Duration Demodulator Description of the Input Evaluation In Galvanic Isolation Mode GIM H the wanted signal for the PD demodulator is obtained from the collector signal of the optocoupler transistor using a comparator The signal transitions especially during operation with low currents behave differently over time depending on the characteristics of the optocoupler itself and its circuitry Evaluation with a fixed discriminator threshold on the comparator leads to different delays of the e
28. l available On chip voltage reference On chip voltage monitoring On chip RESET and PDWN for safe power up and power down management of connected logic circuits SIM 1 2 C79000 G8976 C215 01 Functional Description of the SIM 1 2 2 1 Block Diagram Description The following block diagram represents the SIM 1 2 functions as blocks xF 2 Ordnung 2 Ordnung RXIN 1 I l Crxin Rea If m Interface Jabber 1 Logik IControl Waveshaper VBUS i CTRI Digitale Schnittstelle DC DC Control See EE I VCC R jRESETXN Regulator RocbqPDWNXN 5V SIM 1 2 C79000 G8976 C215 01 13 Functional Description of the SIM 1 2 2 2 Pin Description 2 2 1 Pin Assignment Description The following table describes the assignment of the pin numbers to the symbolic pin names The table also includes a brief description of the functions No Name vO A D Description ler O A Control output for controlling bus current over T1 2 SENSEP O A Actual current sensing for the bus current control and output of the startup bypass 3 SENSEM I O A Correction of the actual current sensing for the bus current control by taking into account the circulating currents over Pad CTR and VBUS amp Re d Generation of an internal reference current with possible external adjustment c E Set reference for bus current control 2 mA to 50 mA corresponds to 0 1 MO to 2 5 2 Ba A Generation o
29. nces otherwise the SIM 1 2 may be destroyed All voltages relate to GND A current flowing out of a pin is preceded by a negative sign Values for bus interfacing SENSEP Voltage at the inputs and 0 3 VBUS V RXIN over Rex and SENSEM CTR outputs 0 3 RXIN Control current at base 5 5 mA of T1 Values for supply VE I VE Load current RIREF Voltage at the inputs and 0 3 VE 0 3 V RVCCVE outputs RVREG RISOLL SIM 1 2 32 C79000 G8976 C215 01 Technical Specifications Values for supply VCC VCCA VCCD Supply voltage I VCCA Load current Maximum is peak VCCD value if a short occurs flows over VM TEST1 Voltage at the inputs and TEST2 RDCDC outputs GIM VCM XTO XT1 Values for supply VREG VREG Supply voltage VREG Load current 55 300 mA The maximum is the peak value if a short circuit occurs TxE TxS RxA Voltage at the inputs and 0 3 VREG V RxS PDWMXN outputs 0 3 RESETXN RA RS Load curoni PDWMXN Load current 1 5 mA lou lot RESETXN Values for DC DC activation Name pin Parameters Max Unit Remark Min Voltage at the outputs 0 3 20 0 V Internal terminal voltage with current limitation Load current considered 40 mA as mean SIM 1 2 C79000 G8976 C215 01 33 Technical Specifications Values for environmental influences and processing Namepin Parameters Mi Max Unit Remark ae E RR Ge Storage tem
30. nctional Description of the SIM 1 2 2 4 Power Supply of the Application For the power supply of the external application electronics it is only ever possible to take as much energy as is taken on average from the bus system less the power consumption of the SIM 1 2 itself 2 4 4 Power Supply VREG The Vrec voltage that can be set between 2 V and 5 V regulated by Rrurec is available as a non floating power supply for the external application electronics The Vrec power supply can be subjected to a maximum load of 50 mA Revrec MO 0 5 VREG V Conditions for Rygge 1 MO lt Ryrec lt 2 5 MO Notice You achieve the minimum VREG tolerance of 3 if you use a resistor with a tolerance of lt 0 1 for Rayngc see also the tolerance calculation in section 2 3 7 Reference Circuit RIREF RVCCVE RVREG RISOLL SIM 1 2 24 C79000 G8976 C215 01 Functional Description of the SIM 1 2 2 4 2 Power Supply VE SIM 1 2 Caution The VE voltage of 6 3 V generated by the shunt regulator cannot be used immediately after turning on the power supply of the external application electronics since this can disrupt the startup of the SIM 1 2 considerably On completion of the startup phase indicated by RESETXN the VE voltage can be used to supply the external application electronics It is however important to make sure that the VE never falls below 80 as a result of sudden load changes If the VE voltage sinks below 90 of VEso
31. nd SINAUT are registered trademarks of Siemens AG Third parties using for their own purposes any other names in this document which refer to trademarks might infringe upon the rights of the trademark owners Disclaimer We have checked the contents of this manual for agreement with the hardware and software described Since deviations cannot be precluded entirely we cannot guarantee full agreement However the data in this manual are reviewed regularly and any necessary corrections included in subsequent editions Suggestions for improvement are welcome Siemens AG Copyright Siemens AG Automation and Drives C79000 G8976 C215 01 Industrial Communication Subject to technical change Postfach 4848 D 90327 Nurnberg Siemens Aktiengesellschaft Printed in the Federal Republic of Germany 2 Safety Instructions Regarding your Product Before you use the product described here read the safety instructions below thoroughly Qualified Personnel Only qualified personnel should be allowed to install and work on this equipment Qualified persons are defined as persons who are authorized to commission to ground and to tag circuits equipment and systems in accordance with established safety practices and standards Correct Usage of Hardware Products AN Note the following Warning This device and its components may only be used for the applications described in the catalog or the technical description and only in connection
32. nd increases system stability The L SENSE inductor is connected in series with R SENSEP and is not included in the layout proposal in this manual As the inductor we recommend the B82422H from the EPCOS series If necessary correct the value of R SENSEP to achieve the required 10 Q with the desired accuracy R SENSEM R_SENSEP L_SENSE SENSEM SENSEP SIM 1 2 C79000 G8976 C215 01 19 Functional Description of the SIM 1 2 2 3 5 2 3 6 2 3 7 20 Receiver Input RXIN The received signal is coupled into the input filter over the external capacitor Crx n 220 pF and Rex 10 KQ Impedance Converter Output Input VE VESRD These two connectors must be directly connected with each other and then over Rsenser With the collector of the external transistor T1 and the external energy storage CVE The voltage at VE VESRD is regulated to a constant 6 3 V Reference Circuit RIREF RVCCVE RVREG RISOLL Connect the contacts to the specified reference resistors Contact Reference resistor RIREF Rrirer All internal references are derived from the current flowing through Rrirer RVCCVE Rrvecve Rrvccve forms the reference for VCC and VE The RVCCVE pin must be backed up to GND by capacitor Crvceve RVREG Rrvrec Rrvres forms the reference for VREG The RVREG pin must be backed up to GND by capacitor Cyrec RISOLL Rr soLL Rr soL Sets the middle current taken from the bus system Notice The tolerance of referen
33. odulator eeeee ne 48 4 2 3 External Dynamic Signal Evaluation sss 51 4 3 Signal Assignment 5 ee REED REPRE ERR ERR 52 4 4 Circuit Exatiples uiii v au dere itte ees 53 4 4 1 Block Diagram of the SIM 1 2 and SPC 4 2 with Galvanic Isolation 53 4 4 2 Diagram of the SIM 1 2 and SPC 4 2 without Galvanic Isolation 54 4 4 3 External Components recommended values sseeee 55 4 4 4 Notes on the Transistor sesssssessssen mener nnne nnn 56 4 5 Layout Proposal 212r tete erede Eee 57 5 Putting into Operation een 59 5 1 Putting into Operation for the First Time 59 5 2 ITestPOllVts 15 22 22 152 8 nie Basta ana Sausage ca deest utin lesen ipie DEED EI 60 6 fOLInepewpee e 61 6 1 References ctu aden S A E dn 61 6 2 Addresses ie eee eee tete ale i aed eee act 62 SIM 1 2 8 C79000 G8976 C215 01 Area of Application and Characteristics 1 1 1 Overview Examples of applications for the SIM 1 2 The SIM 1 2 Siemens IEC MAU allows the setting up of a fieldbus Medium Attachment Unit MAU for 31 25 Kbps complying with IEC 61158 2 regardless of the implemented data link layer protocol In conjunction with a suitable communication controller for example SPC 4 2 devices with a fieldbus attachment can be implemented with little effort The SIM 1 2 supports all send and rec
34. perature temperature 55 150 Junction operating 135 BR EEE junction temperature Temperature Rin ja Heat transfer resistance K W Thermal resistance junction environment from junction to ambient in free air Solder temperature rel JEDEC J STD 020C en sensitivity level LA MSL 3 M JEDEC J STD 020C All pins ESD resistance Human body model SIM 1 2 34 C79000 G8976 C215 01 Technical Specifications 3 2 Normal Operating Conditions and Characteristic Data Note The following tables list the normal operating conditions and characteristic data of the SIM 1 2 and are structured according to the corresponding power supply The information covers the spread of values that must be kept to at a bus voltage VBUS of 9 V to 32 V and an ambient temperature of 40 C to 85 C All voltages relate to GND A current flowing out of a pin is preceded by a negative sign SIM 1 2 C79000 G8976 C215 01 35 Technical Specifications Values for bus interfacing Name pin Parameters Min Typ Mex Unit Remark Vaus Bus voltage 32 0 V Not applied directly to SIM 1 2 Igus Static minimum 1 94 2 2 06 mA Tolerance 3 96 bus current Isus Static maximum 48 5 50 51 5 mA Tolerance 3 bus current Modulation 16 0 17 5 19 0 mA Peak to peak value current VBUS Input current at 0 4 0 55 Bypass current VBUS pin lyBUsBYPASS Own current Own power requirements requirements VBUS startup bypass Voltage at SENSEP and
35. s filter is implemented as a switched capacity filter The input high pass filter is made up of Rex and Crx 20dB dek amp 60dB dek H xK Bandpass amp 1 Tiefpass 20dB dek 1kHz 39kHz f SIM 1 2 28 C79000 G8976 C215 01 Functional Description of the SIM 1 2 2 5 4 Comparator Carrier Detector From the filtered received signal RxF the comparator forms a logic signal RxS2 suitable for further processing A carrier detector also monitors the received signal and generates the carrier detect signal RxA2 dependent on the signal amplitude 2 5 5 Jabber Control If a node is malfunctioning so that it constantly tries to transmit data via the bus connection MAU the data flow must be interrupted to avoid the malfunctioning node for blocking the transmission medium jabber inhibit The SIM 1 2 meets the standard IEC 61158 2 It specifies that transmission of a message to the medium will be interrupted if the message duration exceeds a time of 120 to 240 ms At the same time the transmission of the RxS1 data and the RxA1 signal to the node must be inhibited After a time of 3 s 50 the inhibit is canceled and monitoring the duration of an existing message is restarted If the malfunction on the node persists cancellation of the inhibit be repeated periodically every 3 s 50 Monitoring cannot be disabled 2 5 6 Wave Shaper SIM 1 2 From the logic signals TxS2 and TxE2 the wave shaper generates the analog
36. se in industrial control systems Part 2 Physical layer specification and service definition 2 PROFIBUS Test Guidelines for Field Devices according to PROFIBUS PA Profile for Process Control Devices Version 3 0 Version 3 1 April 2000 Order number 2 061 3 FOUNDATION Specification 31 25 Kbps Physical Layer Conformance Test SIM 1 2 C79000 G8976 C215 01 61 Appendix 6 2 Addresses PROFIBUS User Organization PNO Gesch ftsstelle Hr Dr Wenzel Haid und Neu Stra e 7 76131 Karlsruhe Germany Tel 49 721 9658 590 Technical Information in Germany and Europe Siemens AG A amp D SE RD73 Postfach 2355 90713 F rth Germany Tel 49 911 750 2080 Fax 49 911 750 2100 E mail comdec siemens com Technical Information Outside Europe PROFIBUS Interface Center One Internet Plaza PO Box 4991 Johnson City TN 37602 4991 Fax 01 423 262 2103 BBS 01 423 262 2576 E mail profibus center sea siemens com 62 SIM 1 2 C79000 G8976 C215 01
37. signal TxM with which the IBUS current is modulated C79000 G8976 C215 01 29 Functional Description of the SIM 1 2 2 5 7 30 Interface Logic The interface logic forms the interface to the communication controller of the user electronics Three operating modes are possible Without galvanic isolation If galvanic isolation of the bus interface MAU from the application specific electronics is not required the send or received signals with GIM L on the interface are passed on without any processing and switched through to the user electronics The output level of RxA and RxS is adapted over the interface and application voltage VREG Conventional isolation with optocouplers To achieve galvanic isolation of the lines for data and associated signals various isolating components and circuits can be used One common method is to provide an optocoupler for each of the signals TxS TxE RxS and RxA Power saving isolation with optocouplers The SIM 1 2 also provides the option of a power saving galvanic isolation with only 2 optocouplers SIM 1 2 C79000 G8976 C215 01 Technical Specifications This section contains the technical specifications of the SIM 1 2 SIM 1 2 C79000 G8976 C215 01 31 Technical Specifications 3 1 Limit Values Description The following table lists the limit values of the SIM 1 2 that must not be exceeded Caution These maximum operating conditions must not be exceeded under any circumsta
38. t breaker achieves twice the voltage of VE due to center tapped transformer connected downstream Moreover the energy stored in the leakage inductance of the transformer can induce brief voltage peaks when switching the transistor bridge circuit breaker that are far higher than twice the value of VE and therefore destroy the circuit breaker To prevent this the voltage is limited internally to approximately 20 V The ability of this voltage limitation to absorb is however limited to the energy stored in a leakage inductance of 15 pH When using a transformer with a leakage inductance of 15 pH to 70 uH an additional protective circuit must be use to limit the voltage to 2xVE lt Usi s2 lt lt 20 V A protective circuit between VE and the circuit breakers S1 and S2 each consisting of BAT45 and BZX84C7V5 connected in series e Transformers with a leakage inductance up to 15 uH can be activated at S1 and S2 without any further protective circuit e Transformers with a leakage inductance up to 70 uH can only be activated at 1 and S2 with additional protective circuits see section 4 4 Circuit Examples e Transformers with a leakage inductance gt 70 pH cannot be used The effective capacitive load on the secondary side during startup Cpcpc should not exceed 22 pF at lays 50 mA and 4 7 pF at laus 8 MA see section 2 4 4 When using the DC DC converter on S1 and S2 a minimum current lgys 2 8 mA is recommended SIM 1 2
39. the SIM 1 2 uuususanuanssnannnnnnnnnnnnnanannnnnnnnnnnnnnannnnnn 13 2 1 Block Blagram AR T unte 13 2 2 Pin Description eti det oc terat peto e ode ee ae docs 14 2 21 Pit Assignielht or ett tret t e terga ets odo Ren 14 2 2 2 Pin Arrangement ce REO OH ee RE He RE Reese 16 2 3 Basic Functions of the SIM 1 2 uuuusenenenenenensnenenenenenenenenenennenenenenennnenn 17 2 3 1 Interfacing with the Bus Cable VBUS and GND see 17 2 3 2 Control Eoop CT Rue er ee det ee ed t adi ee daa 17 2 3 3 Current Sensing by SENSEP and SENSEM sse 17 Z 3 4 BUS Gonnector secca tue vete ts 18 2 3 5 Receiver Input RAIN near sehn 20 2 3 6 Impedance Converter Output Input VE VESRD seen 20 2 3 7 Reference Circuit RIREF RVCCVE RVREG RISOLL 0 20 2 3 8 Interface and Application Voltage VREQG ssssssssse 21 2 3 9 Internal Power Supply VCCD VCCA VM sssssseeeeeennen 21 2 3 10 Oscillator X TO XT 2a ern 21 2 3 11 Digital Interface TXE TXS RXA RXS sssssssssssee eene 22 2 3 12 Test and Manufacturing Pins TD TO T1 T2 TA 22 2 3 13 Mode Setting GIM and VCM ssssssssssseeeene eene nennen 22 2 3 14 Voltage Monitoring sssssssssesesseseeemeneeen enne emere nennen 23 24 Power Supply of the Application ssssssssseeeseeeeee 24 2 4 1 Power Supply
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