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Epiportal User Manual - III

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1. Cambridge Glasgow Nottingham F PS RC N ational Centre for Universities of Sheffield 7 III V Technologies 1 10 Export to pdf All details of your growth request layer structure characterization and additional documents can be summarized in a pdf document by clicking on the pdf icon in the corner of the screen see figure 15 below Download the pdf and the document will open showing you the details that have been captured see Appendix B We recommend all Users to do this as it gives them a record of their request EpiPortal Mozilla Firefox File Edit View History Bookmarks Tools Help F EpiPortal Click here to export details to a odf document amp gt Fo phexwebportall shef ac uk wicket interFace 38 en oo b ei User AN Other j edit logout Home gt Request 4 16 11 2011 gt Structure Ref NWS 20111116 0 0 Growth Structure Layer stack for structure N3 J20111116 0 0 e Characterization 100 0 nm 30 0 nm GAAS F cm a 50 0 Am J Ingo 6 SaASq 2P Undoped cm 2 5 Layers INAS Undoped cms Documents 50 0 A Alo 4Gajo5InP Undoped cm 3 500 0 nm GaAs N cri 3 Eo Fea Eo E E Eo Fe Fe Fo Fa Figure 15 Exporting to a pdf document 1 11 Concurrent access to requests The system allows multiple people to access the growth request at the same time however this can lead to problems with multiple edits to data at one time We have decided to allow concurrent access s
2. EPSRC National Centre for amiriga Oman NAOn agesas I V Technologies User AN Other edit logout Home Growth Requests From the menu onthe Growth Requests West to go to a structure Project v overview or edit a reque Pica Hv Status i _J epitest Grant Holder epitest 2 diii de Vr Figure 3 Growth Requests drop down menu Click on the sign to create a new growth request and the menu in figure 4 will appear Select your grant from the grant drop down menu this will be the grant that this epitaxy request will be recorded against and only the grant or grants you have with the NC3 5T will appear in the list The name of the PI of the grant will then appear in the Lead customer name field Select the researcher name here you will see the people who have access rights to this grant Any comments about the request can be made in the comments box EpiPortal Mozilla Firefox File Edit wiew History Bookmarks Tools Help P EpiPortal gt ihxwebportali shef ac uk K z p p Se gt User A N Other edit logout Home rowan Growth request Wed Nov 16 12 54 11 GMT 2011 Grant epites Lead customer name A N Other Lead customer email Researcher name A N Other x Researcher email Time of creation of the request Agreed Delivery Date Not specified Expected Delivery Date Not specified Actual Delivery Date Not specified Status New Yersion O Comments Feedback
3. f age Repeat group drag and drop whole group EEA Add a layer above Figure 12 Icons used within the Epiportal layer editor 1 5 ve finished the structure What s next Once you have completed the layer structure click on either the Characterization option see section 1 6 or select the Documents options see section 1 7 Once you have completed these additional options then you can either i Logout and the system will hold the request at that point even if you don t click on Save ii Go back to the growth request section and enter another growth request under a different grant code by clicking on the symbol on that page see section 1 2 ii Go back to the growth structure section and start a completely different structure under the same growth request details by clicking on the symbol on that page see section 1 3 iv Or you may require an additional growth structure very similar to the one just entered into the system This can be done using of the copy structure function which allows you to duplicate the structure previously entered and then edit it Details of how to do this can be found in section 1 8 January 2013 8 v1 3 Cambridge Glasgow Nottingham F PS RC ENEI Centre olg Universities of Sheffield muss il V Technologies 1 6 Characterization option Should you wish you can add characterization requirements to the request Click on the Characterization option f
4. Growth Structures From the menu on the lett hang side wou can either select a structure to go deeper oF A M Ret edit a structure NS5 201 2090421 A Ref NS5 20 1209043 ma Copied growth structure and ref number Figure 13 Copied growth structure Click on the growth structure ref number and go into the Layer editor A copy of the first growth structure will be in place The process of editing the layers stating characterization requirements and uploading documents can then be repeated as described in sections 1 4 to 1 6 January 2013 9 v1 3 Cambridge Glasgow Nottingham EPS RC ENEI Centre olg Universities of Sheffield muss Il V Technologies 1 9 Setting the growth request status from New to Definition First a note on what the status field entries New Definition and Submitted mean New a new request in the epiportal Definition the request has been completed by the customer and is ready to be checked by the NC3 5T production staff If there are any errors or details missing then the production team member who is responsible for your growth request will contact you Submitted the request has passed the checks and has been submitted into the production schedule You can check the status of a request at any time by simply logging into the epiportal selecting the relevant request and viewing the status field entry Having entered the request details and saved the data the Status field is automati
5. of growth request and growth structures hierarchy Below are some examples of the growth request and growth structure arrangements that are possible through the Epiportal Growth Request Principle Investigator Grant code RAs and students details Date request created Growth Request Growth Request Principle Investigator Grant code Principle Investigator Grant code RAs and students details RAs and students details Date request created Date request created Growth Structure C Number of wafers 3 Substrate P type Growth Structure B Number of wafers 1 Substrate Undoped Growth Structure layers B Growth Structure layers C 1 wafer delivered 3 wafers grown delivered Growth Structure A Number of wafers 1 Substrate N type Growth Structure layers A 1 wafer delivered Growth Structure Growth Structure Customer Ref Purpose Customer Ref Purpose Substrate type and size Substrate type and size Growth method MBE or MOCVD Growth method MBE or MOCVD Number of wafers requested Number of wafers requested e g 1 wafer e g 3 wafers Growth Structure layers Growth Structure layers from one growth structure Material composition Material composition x3 wafers thickness doping and layer repeats thickness doping and layer repeats grown delivered One wafer requested One wafer delivered from one growth structure Example 1 Example 2 Example 3 January 2013 12 v1 3 Cambridge Glasgow Nottingham EPS
6. with different parentheses please contact a member of NC3 5T staff and they will be able to add it to the material database Material Tolerance This field can be left blank in which case the NC3 5T will grow the layer ona best effort basis However if the composition tolerances in the structure are critical then this must be used to help the NC3 5T meet your requirements Selecting the Other option in the material tolerance drop down menu is free text so comments such as QW at 980nm are accepted Thickness Enter a thickness specifying the unit in um nm or A defaults to nm The values must be gt 0 Thickness Tolerance as with the material tolerance But once again if the thickness tolerances in the structure are critical then this must be completed Repeats The number of times a stack of layers should be repeated e g in a DBR Changing the number of repeats will cause a split in the structure to give a repeat stack in the editor Should you wish to have two repeats of the same repeat number sat on one another it is necessary to create a dummy layer between them to split them up select dummy material Repeat number must be gt 0 Doping Level Specified in scientific notation e g 1E17 is 1x10 Leave as 0 0 for undoped or if you wish to specify a minimum doping level do this in tolerance The units default to cm but can be changed to cm if you are specifying a sheet doping Doping Tolerance Can be le
7. EPS RC ENEI Centre olg Universities of Sheffield Cambridge Glasgow Nottingham asse il V Technologies Epiportal User Instructions Introduction This is a step by step guide in how to create a growth request using the EPSRC National Centre for IIl V Technologies NC3 5T Epiportal The Epiportal allows the customer to log in and build a growth structure layer by layer to the specifications required Resulting in improved communication with the customer and also consistent record keeping of wafers grown and supplied by the NC3 5T CONTENTS Epip nal User ISU COINS aoc ac sascha ce aaa 1 t WM EO ON GAN res acts ste a ce ple ei em cto ap teeta ee selene nei iain naman cas S 2 Hes Mier ITN Iassi anes yee menace ean a E NE E EL S 2 1 2 Creating a growth TC QUCS Goa sce tecece aie cnecsertenecttwnctnsetseeerieceemencnveeneceseansnetcacteaieetenscenGeeenceeenmstewees 2 1 3 GHEAUINIG a growth SIN UIC IIS scissa ERA Na NERA 4 1 4 Using the layer ditor OplON essi E ER 6 1 5 Pve finished the structure What S N Xt cccccccsssssseeeseeesseeeeeeensseeeseoenseeeeeoessseessoonseeeeeoonneeees 8 1 6 Characterization option sssnnnunnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnnn nnmnnn mnnn mnnn nnna 9 k s DOCUMEN UDIO oia E E a a a 9 1 8 Copying growth structures ccccccseeseseeeeeeeeeceenneeeeeeeeeeoeessseeeeeseeooeessseeeeeseooeessseeeeeseoooensnseesesseaoas 9 1 9 Setting the growth requ
8. Figure 4 Grant and User information Save or cancel the request Upon saving the grant and user information an identification number appears on the left hand side of the screen along with the edit tab see figure 5 on the next page More growth requests can be added by clicking on the sign again The growth request information is now stored in the system the data will be retained should you decide to log out at this point If you log out of the epiportal and at a later date wish to change the grant and user information click on the edit tab next to the epiportal request number This will open up the screen shown in figure 5 once again and allow you to change the details January 2013 3 v1 3 AEE Centre olg Universities of Sheffield Ill V Technologies Cambridge Glasgow Nottingham User AN Other edit logout Home Growth Requests Project Dd v amp epitest Grant epitest d Lead customer name AWN Other Lead customer email a other sheffield ac uk 89 22 08 2012 Researcher name A N Other A 96 4 09 2012 Researcher email a other sheffield ac uk Time of creation of the request 4 September 2012 Agreed Delivery Date Not specified Expected Delivery Date Not specified Actual Delivery Date Not specified Status New Mersion 1 Growth request number and date request was made Edit tab Growth request 2012 09 04 13 10 01 0 A 68 30 05 2012 Feedback Delete Cancel Figure 5 Grant and Use
9. RC ENEI Centre for _ Universities of Sheffield Ill V Technologies Appendix B pdf example Universities ol Shef irid EPSRC National Centre for Cambridge Glasgow Nottingham acer III V Technologies Epitaxial Growth Details Growth Structure Internal reference VAN2O 1209024 Customer reference epitest n rrrrrrr r tsOCOCOCC CCSY Number of supplied wafers 1 Growth method MEE Equipment to be used VN30_1_MBE Responsible VOS staff member Edmund Clarke Growth structure creation date 04 September 2012 Agreed delivery date Mot specified Expected delivery date Mot specified Expected number of runs Actual delivery date Mot specified Delivery date comment Substrate details pe OOOO G No a Cystal orientation No Crystal Crystal offcut orientation No Crystal Cystal offcut angle deg 0 0 Growth Structure VN20120904 2 1 ka Repte Thickness Thickness Migr Doping type Depinglava Deping tolerance i telerance 120 0 nm GaAs P 2 0219 cm 30 0 nm InAs Undoped 0 0 em 50 0 nm In on Gana ASan P an Undoped 0 0 em 80 0 Al ox Gaps IN ox P Undoped 0 0 em 500 0 nm GaAs N 20E17 cm Growth Structure Characterizations WN20120904 2 1 Method Purpose XRO 12 September 2012 15 2249 BST Page 1of2 January 2013 13 v1 3
10. cally set to New At this point production staff are automatically alerted of a new request and if required will contact you as soon as possible to discuss it However if you are satisfied that the request is complete including any addition information then the status can be moved from New to Definition To do this Click on the Finish button see figure 14 below this will finalize the request and the request status field will go from New to Definition Once again be aware that the request can no longer be edited by you once it is set to Definition However if the Finish option was activated by mistake you can contact either Rob Airey r airey sheffield ac uk Ben Stevens b stevens sheffield ac uk or Ed Clarke edmund clarke sheffield ac uk and they will be able to reset the status back to New so that you can edit your request once again When the request is saved an automated email will be sent to the PI of the grant informing them of the status change Growth structure V820120904 3 2 AoW SoU hur Growth structure V820170904 3 2 2 Re LUG OMer TEER 86 apres a Ret v ziva AAS Figure 14 Status Change from New to Definition The next change in the Status of the request is from Definition to Submitted which is carried out by the NC3 5T staff As stated earlier this signifies that the request has been scheduled for production Once again the PI is informed by an automated email of this change January 2013 10 v1 3
11. est status from New to Definition c csssseeesesessseeeseeeesseesseeeees 10 t10 EXHOTL TO DOi isoce aE O Ea NNE aE O E i E 11 1 11 Concurrent access to requests ccccsssessseeeeeeeeeccnnnseeeeeeeeeconasseeeeeeeeoonaaseseeeeeneoonsnseseeseeeaes 11 Tolz FaU HNA n 11 L INS aac tae sc E EE E E S 12 Appendix A Overview of growth request and growth structures hierarchy sccsssssseee 12 Appendix B POI example sers E E EE 13 January 2013 1 v1 3 Cambridge Glasgow Nottingham F PS RC ENEI Centre olg Universities of Sheffield Ill V Technologies 1 The Epiportal The Principle Investigator PI who holds a current EPSRC grant with the NC3 5T will be given an account on the epiportal where they can oversee all growth requests made against their grant or any other grants that they may hold Additionally if the PI requests it we can also add accounts for RAs and students to the grant so that they can also make requests via the epiportal Access for RAs and students will only be given with the authority of the PI of the grant To arrange this contact B Stevens or R Airey giving the name of the RA student their email address and which grant they can access NOTE ALL GRANTS AND USER ACCESS DETAILS ARE TREATED AS CONFIDENTIAL BY THE NC3 5T 1 1 Logging in e Enter your username and password provided by the NC3 5T Any problems logging in contact Ben Stevens b stevens sheffield ac uk o
12. ft blank but as before if the doping tolerances in the structure are critical then this must be completed With the other units the tolerance becomes a text field January 2013 7 v1 3 Cambridge Glasgow Nottingham F PS RC ENEI Centre for Universities of Sheffield reer I V Technologies Enter the details of the new layer in the pop up menu and save to add the layer to the overall structure as shown in figure 11 below Layers can be added above and below other layers deleted edited individually and copied in groups by using the drag and drop facility Figure 12 below shows the different icons and their functions Note the direction of growth is from the bottom up so the layer at the bottom of the layer stack in figure 11 is the one grown directly on top of the substrate User AN Other edit logout y Home Request 96 4 09 2012 gt Structure Ref N5 J20120904 2 Growth structure Layer stack for structure NS J20120904 2 1 Characterization erie F JX 1000nm 1 GAAS 2 0E19 cm 3 P JX 300nm 1 InAs 0 0 cm 3 Undoped 50 0nm 3 InggoaAsgaP 0 0 cm a Undoped 60 0 4A 3 AloaGaiosinP 0 0 cm 3 Undoped JX 500 0nm GAAS 2 0E17 cm 3 N substrate Layers Documents Eb Eb Eb E He Fo Eb Fb Es Fb te E Direction of Growth Figure 11 A layer stack showing an example of repeats the number after the thickness gives the repeat number E Fj Edit _ Copy Delete E Add a layer below
13. igure 9 to specify the characterization to be carried out on the structure The purpose field should be completed to let the NC3 5T staff know what you wish to find out from the characterization to ensure the data is supplied and interpreted accordingly If the characterization option is left blank quality assurance tests are still carried out as standard on the wafer to ensure customer satisfaction 1 7 Documents upload If you wish to upload additional information e g modelling results device fabrication details etc then click on the Documents option figure 9 1 8 Copying growth structures As stated in point iv of section 1 5 growth structures can now be copied and edited making the task of entering several growth structures into the epiportal much easier This is done as follows Click on the highlighted text shown in figure 8 Then click on the edit icon next to the growth structure ref number so that the preliminary growth structure appears as shown in figure 6 Click on Copy a new preliminary growth structure appears figure 12 below Enter the required number of structures in the top field Change any other fields as required and then click on Save Growth structure 2012 09 04 14 50 07 0 Figure 12 Preliminary growth structure copy Once the copy is saved a new growth structure and ref number is created see figure 13 below User AN Other edit logout Home gt Request 96 4 09 2012
14. ince it enables two people e g on each end of a phone call to discuss and build a structure However in order to prevent the system crashing it is necessary for one person to edit the structure and the 2 to then refresh the structure ctril cmd r before they undertake any editing In the next version of the EpiPortal we will have data locking to prevent crashes when doing this 1 12 Fault finding The system runs using Java within your web browser We have found that the Mozilla Firefox browser is less likely to stop working with our system when it updates itself If you encounter any problems we would first ask that you try using Firefox and check that you have the most up to date Java runtime on Windows and OSX machines Java will normally ask to update itself Your computer will normally ask whether you wish to run the Java code on a page the Epiportal will not work if you say no You may wish to set Java from this page to always run Pop up blockers and Ad Block Plus may need to have the Epiportal web address added for you to see all the windows Blank screen on logging in This can be caused by Java running in 64 bit mode On OSX try Applications gt Utilities gt Java Preferences gt General and drag the 32 bit version of Java above the 64 bit version January 2013 11 v1 3 EPS RC AEE Centre olg Universities of Sheffield Cambridge Glasgow Nottingham auss Il V Technologies 2 Appendices Appendix A Overview
15. r Rob Airey r airey sheffield ac uk User AN Other edit logout Hame Growth Requests From the menu on the lett hand side you can either select a request to go to a structure Project overview or edit a reguest C Project folder d Figure 1 Home screen of the epiportal Once logged in the screen given in figure 1 will appear At the top right your username is displayed and also the edit link The edit link allows you to change your password and contact details see figure 2 Note passwords must be at least 6 characters long and must contain characters out of 3 categories from the 4 that are available e g lower case upper case digit punctuation character otherwise the system will not change the password User AN Other edit logout Home User Edit User Edit A N Other Password Password repeat Email Phone number Cancel Figure 2 User edit screen for changing password and contact details 1 2 Creating a growth request Make sure you are on the home page by clicking on the text Home at the top of the page Click on the growth request drop down menu Clicking on the drop down menu gives three viewing options see inset of figure 3 The first is the Status of your request then the Grant Holder and finally Project which will list your project or projects on the system Note the PI and their authorized RAs students can only see details about their own grants January 2013 2 v1 3
16. r information Note the fields Agreed Delivery Date Expected Delivery Date and Actual Delivery Date in figure 5 are for the NC3 5T staff to complete The Version field is incremented each time the request is changed and saved The role of the Status field is detailed in section 1 9 1 3 Creating a growth structure Once you have created a request you can add one or more structures to the request You need a structure for each different wafer that you wish to receive Multiple wafers that are identical only require one structure see appendix A for an overview of growth requests and growth structures hierarchy Click on the request that you would like to add the structure s too and then click on the symbol to add a new structure The screen shot shown in figure 6 below will appear This is the preliminary growth structure window where the substrate type and growth method are defined Simply choose from the pull down menus what materials number of wafers and wafer sizes are required Note the fields that are greyed out are for NC3 5T staff to complete Clicking on Save figure 6 below will record the data entered so far and close the window The growth requests list on the left of the epiportal screen will remain and you can simply click on the edit tab figure 6 to re open the window if you want to go back to change any of the details Saving also automatically informs the NC3 5T staff that a new request has been initiated Jan
17. tion Cancel removes the data entered in the growth structure for the current epiportal session but keeps all the data from the last time the save command was used Copy allows duplication of the growth structure the copied structure can then be edited to requirements Further details can be found in section 1 8 Save as Stated before records all the data entered into the epiportal Finish finalizes your request and changes the status of your request from New to Definition Be aware that once the Finish is activated the growth structure can no longer be edited or deleted Do not select the Finish option until you are satisfied that the structure is correct and all other details are in place e g characterization requirements and any device fabrication documentation if required Should you require any help the NC3 5T growth staff are happy to discuss any aspect of your growth request The email addresses of the production staff can be found at our website EPSRC National Centre for IIIl V Technologies January 2013 5 v1 3 Cambridge Glasgow Nottingham PS RC National Centre for Universities of Sheffield Ill V Technologies 1 4 Using the layer editor option Click on the growth structure ref number in figure 7 to open the screen shown in figure 8 This gives three options on the left Characterization Layers and Documents see figure 8 Note You can also go back to the previous page by clicking on the highlighted te
18. uary 2013 4 v1 3 National Centre for Ill V Technologies Growth Structures A Ref VN20120904 2 1 A Ref Customer reference S J20120904 3 2 eE Purpose Substrate material Substrate doping type Substrate polish Substrate size Growth request number and 0 0 4e rystal orientation date request was made offcut orientation substrate crystal offcut angle deg Number of supplied wafers Growth method Equipment to be used Internal reference Responsible UOS staff member Time of creation of the request Agreed Delivery Date Expected number of runs Expected Delivery Date Clicking on the edit tab allows the user to go back into the preliminary growth structure and carry out any changes Deliver date comments Actual Delivery Date Status Universities of Sheffield Cambridge Glasgow Nottingham Growth structure NS J20120904 3 2 epitest test GaAs N SingleSide 2 inch NoCrystal NocCrystal 0 2 MBE Not specified NS 20120904 3 2 Not specified 4 September 2012 Not specified 0 Not specified baal bea ha Not specified New Feedback Delete Cancel Finish Co py Figure 6 Preliminary growth structure details Once you have entered the required data you can choose any one of the five options at the bottom on the window figure 6 Delete removes the growth structure from the overall grow request a warning screen appears asking you to confirm the dele
19. ure details figure 6 This opens the layer editor dialogue box figure 10 select the material layer thickness repeats and doping levels you require The section after figure 10 gives details of what each box means and what is required January 2013 6 v1 3 EPSRC National Centre for Carnie Gaade Nott corer il V Technologies User AN Other edit logout Home gt Request 96 4 09 2012 gt Structure Ref NS J20120904 2 1 ridt eee Layer stack for structure NS 20120904 2 1 Characterization 4 J 100 0 nm GaAs 2 0E19 cm 3 P 1 AOR 300nm 1 InAs 0 0 cm 3 Undoped LOR 50 0nm 3 InogGaAso2P 0 0 cm 3 Undoped LO amp 3 Alo 4GajosinP 0 0 cm 3 Undoped Layers Documents Zz m 00 0 nim JA ASN New Layer for Structure NS 20120904 2 1 InxGaAsyP x 0 6 y 0 2 min value max In D Material Ga 0 1x As O y P 0 1 Check 1 1 Material tolerance 0 2 Percentage Thickness 50 nm Thickness tolerance 0 2 Percentage Repeats 3 Doping level 1 0 Doping type Undoped cm 2 Doping tolerance Percentage Cancel Save Figure 10 New Layer pop up menu Material select this from the drop down box If a subscript or multiples is required you will get a box to add x y and z the values of which will be between 0 and 1 Pressing the check button will check the indices are correct and display the material with the actual subscripts If your material is not listed or you wish to define it
20. xt shown in figure 8 Clicking on the Home text will take you back to the start of the process as illustrated in figure 1 User AN Other edit logout Home gt Request 96 4 09 2012 Sy Growth Structures From the menu on the lett hand side wou can either select a structure to go deeper or AW Ref egit a structure Ceo Click here to open the three AD Ret V820120904 3 2 options window d Figure 7 Saved growth structure details User AN Other edit logout Home xReguest 96 4 09 2012 gt structure Ref NS 20 1209047271 Growth structure Che an item from the menu to edit specific structure details Characterization Layers If you wish to go back to the previous step then click on the text that is Documents highlighted Figure 8 Growth structure options Click on the Layers option to open the layers editor window figure 9 below EpiPortal Mozilla Firefox File Edit View History Bookmarks Tools Help F EpiPortal i gt hxwebportali she ac uk Y phxwebporta shet acu User AN Other edit logout Horne gt Request 4 16 11 2011 gt Structure Ref NS J20111116 0 0 e Growth Structure Characterization Layer stack for structure NS J20111116 0 0 oi e Layers Documents Figure 9 Initial Growth structure options Click the symbol to add your first layer on to the substrate remember the substrate was selected in the preliminary growth struct

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