全ページ一括 [RH984c]
Contents
1.2.
3. OA
4. 35 30 9 O1 Derating rate 1 2 3 4 5 6 7 8 Parallel number DcS 8 5 fF Fuji Electric Innovating Energy Technology 8 5 8 IGBT
5. Timax 6 11 IGBT
6. IGBT fF Fuji Electric Innovating Energy Technology 11 1 11 IGBT 11 1 3 LAR a
7. 1 9 5 9 6
8. Fo Fuji Electric Innovating Energy Technology 6 7 6 2 1 IGBT 6 6 6 6 Tj 77 W x Rth j c Rthlc f AR 7 a Ta Tc T 6 13 6 7
9. FWD IGBT IGBT G E 5V 15V 20V IGBT FWD dV dt dv dt IGBT VGE VGE RG CGE
10. IGBT C E 5 Ff Fuji Electric Innovating Energy Technology 5 13 5 2 4
11. A 0 qa Ww Nn B 4 7 a 1 I a 10 7 Fo Fuji Electric Innovating Energy Technology 10 IGBT EMC 2 2 10 8
12. L C Fo Fuji Electric Innovating Energy Technology 10 12 10 IGBT EMC 3 1 3 IGBT IGBT dV dt dV dt IGBT e C L C
13. 10 24 10 25 10 24 fF Fuji Electric Innovating Energy Technology 10 15 10 IGBT EMC 90 80 70 60 Conducted Emission dBuV 50 40 0 1 1 10 100 MHz 10 25 8 Q 306 10dB IGBT
14. IGBT IGBT IGBT 11
15. fF Fuji Electric Innovating Energy Technology 11 2 11 IGBT
16. OS 9 10 FC Fuji El
17. IGBT Fo Fuji Electric Innovating Energy Technology 8 7 8 IGBT
18. i ii ii 9 2 ER eS Vc Vc Vcg L di dt IGBT L iv v
19. RCD IGBT RBSOA 5 9 Vorsp Ed Vey g 7c dt Res Ed VEw Ls 600V 20 30V dlc dt 1200V 40 60V 2 Cs Llo ee a Ed L lo IGBT VcEp
20. 1 IGBT IGBT 8 7 8 6 LE1 LE2 IGBT
21. 2 5 2 6 2 IGBT V V IGBT 9 1 9 1 9 1
22. Fo Fuji Electric Innovating Energy Technology 9 4 9 4 IGBT
23. Veg 15V 4 7 Vc dV dt Vc IGBT IGBT IGBT IGBT 4 7 FWD 4 8 FWD Vce Icg Vge 4 8 FWD 4 7 C E dV dt dV dt i c C G Cres R 4 7 Fuji Electric Innovating Energy Technology 4 i ce Re AV Re x
24. 6in1 7in1 P N fF Fuji Electric Innovating Energy Technology 10 17 10 IGBT EMC 3 1 4 2 IGBT FWD 10 27 20dB dec 40dB dec a EC E 2 f2 30MHz 10 27 IGBT 10 27 2 30MHz
25. Cres Cies IGBT dV dt 8 ai HE fF Fuji Electric Innovating Energy Technology 5 1 ii 5 2 2 LIESEEREE EE EE 5 6 IGBT FF Fuji Electric Innovating Energy Technology 5 1 5 1 1 IGBT IGBT
26. 0V 0A AC 0A 71 73 Ee Kk lt 7 2 dt 9 5 AC100V 9 6 Fo Fuji Electric Innovating Energy Technology 9 8 9 2 5 1
27. LC1 LE1 LC2 LE2 LE1 LE2 8 20 di dt IGBT LC1 LC2 LE1 LE2 IGBT IGBT
28. FF Fuji Electric Innovating Energy Technology 9 2 9 2 2 IGBT 1 RC 3 4div DC
29. ee 24 ASME ATc P C 2 Fujl Electric Innovating Energy Technology 11 3 11 0 11 1 11 2 6 IGBT V 11 1 V Reference norms Number of Accept Test items Test methods and conditions EIAJ ED 4701 ance Aug 2001 edi
30. IGBT AT 11 6 Fo Fuji Electric Innovating Energy Technology 11 8 11 3 2 ATc ATc P C 11 7 ATc ATc P C 11 8 6in1 ATc A Tc 6in1 6 2in1 2 Tc Tc AT
31. Eoff IGBT IGBT p n n IGBT FZ Float Zone
32. tn NEW PD 9 9 CR 7 T 2 2xRxC 9 9 R C Ra C C G R R 10 1 C2 9 5pF R 10M Ri 500 Q C 2 pF 2 2nsec 12nsec Fo Fuji Electric Innovating Energy Technology 9 11 9 3
33. n IGBT n FS Field Stop FS n n FS IGBT IGBT IGBT IGBT
34. 2 ATj ATc Tc 8
35. 7 6 3 UIVW DC dv dt 5 i Vc Vs VeE 5V Fo Fuji Electric Innovating Energy Tec
36. 4 5 Pt PCB 4 5 1 Pt Pt 4 5 2 Pt Fuji Electric Innovating Energy Technology 4 1 2 4 5 Pt 4
37. C E 0 V 2 4 4 GDU Vee 0V SW C E GDU G E IGBT SW 3 2
38. RBSOA max Fo Fuji Electric Innovating Energy Technology 8 4 8 IGBT w 15 Icnsy 200A n 4 643 4 200 x4 800A 19 6 1 n x cs gt 8 5 IGBT w 15
39. S RMS 2 FF Fuji Electric Innovating Energy Technology 9 13 9
40. 4 12 1 IGBT 4 12 2 4 12 2 4 00mV 00mV 1 606mV 00mV Ch3 200mV 200mV Ch3 200mV 200mv 1 2
41. 100um 6 1 6 1 G746 TG221 SC102 YG6260 P12 Wacker Chemie HTC ELECTROLUBE fF Fuji Electric Innovating Energy Technology 6 13 6 3 4 IGBT 6 12
42. IGBT IGBT di dt 5 12 Without clamp circuit Ts With clamp circuit 5 12 Fo Fuji Electric Innovating Energy Technology 5 15 6 6 2 2 67 3 IGBT 0 6 11
43. 6 7
44. ST ON DE Na 5 IGBT TI max IGBT
45. IGBT 1 IEC61800 3 PDS PowerDriveSystem QP 10 2 C1 C2 C3 C3 IEC61800 3 Conducted Emissions 6 0 15 30MHz 100 80 dBuV m o gt Md Semn m Category C2 Category C3 20 500kHz MHz 0 0 1 1 10 100 MHz 10 2 I EC61800 3 fF Fuji Electric Innovating Energy Technology 10 2 10 IGBT
46. Vcg a A 125 C a x100 ay 5 0 0 1 0 2 0 3 0 4 0 5 0 6 Vccegy RE 8 4 VcEsay Current imbalance rate o at 1 5 IGBT n Vcg y 1 n 2 w gt 4 1 7 a a ao w 8 1 2 lecave Ici Ic2 2 lcmaxyy 1
47. 8 1 Vce sat IGBT 8 1 2 8 1 Q Q Voor r a 2 oy Mo XT eg r MM 7 Qi QQ Y Y Q Q2 lc2 Icem Ici TIlc2 Qi Q IGBT 1 02 Po 2 8 1 Te ue V Vo Q Q rzT 8 1 rz gt ri Q1 Vcg ay
48. 5 10 IGBT FWD IGBT FWD 1 1 RBSOA 1600 2MBI450VN 120 50 1200V 450A 1400 1200 1000 Spike voltage V 800 Vge 15V 15V Vcc 600V lc vari Rg 0 52 ohm Ls 60nH Tj 125deg C 600 400 0 200 400 600 800 1000 Collector current A 5 10 IGBT
49. 3 1 GE 0 IGBT Cres oo 6 oi 5 IGBT G 3 2 IGBT G E _ DUT IGBT GDU G CRO A S S 4 4 G E
50. 10 1 IGBT EMC IGBT 100V 100A a 500ns EMI FMG EMS ESD 10 1 EMC EMI EMS IGBT IGBT EMI fF Fuji Electric Innovating Energy Technology 10 1 10 IGBT EMC 1 1 EMI IGBT
51. 5 2 IGBT IGBT IGBT 7 8 1 7 8 2 Re 3 IGBT 4 Ree IGBT
52. lt 1 173 o 2 1 2 1 173 2 2 4 6 12 IGBT fF Fuji Electric Innovating Energy Technology 6 14 6 3 5 IGBT IGBT 6 12 IGBT 3 6
53. Cce Rg Cc 7 dV dt 4 9 VeE 7 3 4 IGBT FWD
54. G E 2 2 C E 4 3 G E CT G E C EE 4 3 C E C E FWD C E M C E fF Fuji Electric Innovating Energy Technology ICES
55. Js MY 3 A lk ml AIA 3 M ATc AT C E G E THB 4 1 f E FF Fuji Electric
56. IGBT 2 1 6 8 Ti d Wd x RthCj c d Rth c f d Wa 2WT 2WD x A 7 7 Ti T WT x Rth j T WT WD x Rth c fT Wd 2WT 2WD x Rth f a Ta Ti D WD x Rth j c WT WD x Rth c f T Wa 2WT 2WD x AR 7 7 max W W 7 7 4 7 Ri AA 3 6 6 Fujl Electric Innovating Energy Technolo
57. MHz L C R 10 8 100kHz MHz 10MHz
58. IGBT IGBT 10n 100nH 100pF IGBT PN fF Fuji Electric Innovating Energy Technology 10 6 10 IGBT EMC 10 10 L C 200nH 500pF fo 1 1 O 16MHz 2zvLC 2z 200nHx300pF 10 11 L 200nH C 500pF 10 11 IGBT 16MHz
59. 2 2 1 IGBT 2 2 8 6 IGBT1 2 IC1 IC2 IGBT LC1 LE1 LC2 LE2
60. 2 3 4 5 6 8 2 1 2
61. IGBT 3 fF Fuji Electric Innovating Energy Technology 1 2 1 Gate Emitter Gate Emitter Emitter Collector Collector Collector a b c 1 1 IGBT RS Fuji Electric Innovating Energy Technology 1 3 1 1 2 1 3 IGBT 1 2 DCB Direct Copper Bonding
62. RoHS RoHS Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment EU 2006 7 1 Pb Cd Cr6 6 Hg PBB PBDE 6 6 EU IGBT RoHS DCB Pb Pb RoHS UL UL
63. 2 3 FF Fuji Electric Innovating Energy Technology 9 5 1 9 2 9 2 N
64. 100mm 50m 10um 6 4 2 Fo Fuji Electric Innovating Energy Technology 3 5 8 1 1 5 35 45 75
65. IGBT 3 1 i IGBT IGBT IGBT 10k ReE Fo Fuji Electric Innovating Energy Technology 3 3 IGBT IGBT
66. 1 3 DCB IGBT FWD IGBT fF Fuji Electric Innovating Energy Technology IGBT FWD 1 2 IGBT IGBT 1 3 IGBT
67. 9 4 9 4 etc 5 3 5 5nsec 4
68. L R x 10 21 L uH 0 1 1 10 100 MHz 10 21 LR mae a DBC 3 Ni 10 22 fF Fuji Electric Innovating Energy Technology 10 14 10 IGBT EMC 100 Z 1 Mf Hz 10 23 10 23
69. ty FR Fuji Electric Innovating Energy Technology 2 Rs IGBT IGBT 4 t R dlc dt Ls Ls x dlc dt RBSOA 2 4 R
70. R R 1 Re Rs Re R 2 dwdt Re 3 FWD R
71. IGBT IGBT RBSOA IGBT 5 2 5 2 5 2 Fo Fuji Electric Innovating Energy Technology 5 4 5 5 2 AC CT 5 2 DC CT 5 2
72. 7 7 5 IGBT t max Rs IGBT 3usec
73. IGBT 7 4 S1 S2 7 4 7 3 Qg Gate charge 7 3 4 7 4 Fuji Electric Innovating Energy Technology lep ge Top Ro R VeE VeE Re Rg 7
74. 7 1 IGBT dv dt 1 1 1 Vsg Ve 15V Ve 1 Veg G E 20V 2 10 3 C E Veeaap Vee Vee 4 VeE 5 FWD VeE 6 IGBT FWD dvdt dvdt Ve
75. Fo Fuji Electric Innovating Energy Technology 3 6 1 Vaz IGBT Veg Vcs Vc
76. VCE 8 2 Ri gt Rg 8 2 lci lc REr REg gt Ve V Vg IGBT IGBT 1 3
77. VcE ap 8 3 100A Vce 1 1 VcE sy IGBT VcE a IGBT Collector current A Tj 25 C Tj 125 C IGBT 0 0 5 1 1 5 2 2 5 3 3 5 VcE sap Collector to Emitter voltage V IGBT 8 3 IGBT Fo Fuji Electric Innov
78. IGBT IGBT IGBT 3 2 3 IGBT FF Fuji Electric Innovating Energy Technology 8 1 8 IGBT IGBT 2 VcEsasy 1 1 Vcgsay IGBT Vce sal
79. 16 Rg Rg Rg IGBT EMC EMI 17 Fujl Electric Innovating Energy Technology 3 8 4 1 0 4 1 2 4 7 3 0
80. AT 2 1 ATj ATT P C 1 ATc ATc P C Tc DCB ATj P C ATc P C 3 1 ATj ATij P C 11 2 ATj ATj P C 11 3
81. IGBT 10 5 10 5 10 6 SS Ef 10 6 R S T 10 7
82. t It IT 3 8 EMC IGBT UPS CE VCCI EMI EMI IGBT IGBT dv dtdi dt EMI EMI
83. 150kHz 125dBniV 70dBuV dB 3 1 2 10 17 L C 10 16 1MHz 10MHz 10MHz Fo Fuji Electric
84. Fo Fuji Electric Innovating Energy Technology 6 3 6 1 3 VVVF TU NN HUN HINY DN FWD 6 2 PWM VVVF PWM 2 1 3 PWM VVVF PWM 2 Pa Pr IGBT FWD 6 3
85. IGBT 8 8 2in1 8 8 IGBT IGBT1 IGBT2 IGBT 8 9 1000A 1700V 2in1 2 lc1 lc2 2 Inductive Load 8 8 2in1 RC1 RC2 RL1 RL2 RE1 RE2 LC1 LC2 LL1 LL2 LE1 LE2 Fuji Electric Innovating Energy Technology 8 8 8 IGBT
86. Tjp Tjp max Tip T a Rdr AC RED i t2 R o R t1 12 R t2 R t1 t1 t2 t1 12 6 9 tt 0 Tjp Tc t 6 10 fF Fuji Electric Innovating Energy Technology 6 10 6 IGBT 3 1 IGBT IGBT 1 1 IGBT IGBT IGBT 3 2
87. IGBT 16MHz 30MHz 10 1 10 1 L C PN 20 40nH IGBT 100 200pF 20 40nH 500 1 000pF 100pF 7 50 200pF MHz C 100 200pF C 13 000pF 3 15kW 4 100pF 100n uH 1m 100nH 10 cm 100nH LC
88. DCB DCB J he MM Tf 2 toff 10 20min ton 1 lt 3min 11 7 ATc ATc Tc DCB DCB Rth Tj T TImax 11 8 ATc Fo Fuji Electric
89. Psat PTr Pon Psw IGBT 1 Poff Ptotal PF FWD PFWD Prr IGBT FWD Fo Fuji Electric Innovating Energy Technology 6 2 6 1 2 DC IGBT FWD
90. Switching time vs Collector current typ Switching time vs Collector current typ Vec 600V VGE 15V Rg 1 60 Tj 125 C Vcc 600V VGE 15V Rg 1 60 Tj 150 C 10000 er ee rai te Fae he ell ee ps ne sid nt rc sti es 10000 hE a LR ha SS PE DO EE DR ct ne a tai ce ein eiatd 00 a a MA 5 100o 5 0000 re 8 ow ow E oo c ees tess pose hearin Giro OO 5 ERR 9 A 10 10 0 50 100 150 200 250 0 50 100 150 200 250 Collector current lc Collector current lc Al 2 6 2 7 Tj 125 C Tj 150 C Switching time vs gate resistance typ Switching loss vs Collector current typ Vcc 600V lc 100A VGE 15V Tj 125 C Vcc 600V VGE 15V Rg 1 6O 10000 30 a 0 td 1 FE Oo En 150 C g
91. C E A K Tw LL Vge 0 IM 1WI 1 1 1 1 1 1 1 I Opposin9 FWD Vak 0 4 10 fF Fuji Electric Innovating Energy Technology 4 11 4 Tw 1s Tw 1xs Tw Re Ceg
92. IGBT 2 Punch Through Non Punch Through 1 1 n IGBT IGBT 1988 IGBT IGBT IGBT IGBT n n
93. 3 1 3 1 10 19 7MBR75U4B120 10 19 2 3 10MHz 5dB 2 Co Conducted Emisson dBuV O1 MHz 10 19 7MBR75U4B120 FS Fuji Electrc Innovating Energy Technology 10 13 10 IGBT EMC 3 1 3 2 LR 10 20 0 R 10 20
94. 3 1 4 IGBT EMI IGBT FWD dV dt LC 10 26 LC f Ef _ 1 32x10 T Ef S If sin 0 1 L R i S yy 1 Ef C 10 26 C
95. 3 5nsec 3 1 4 3 5 4 0 87nsec 1 0 35 0 87 x 10 3 lt 4 x 10 400MHz 400MHz Fo Fuji Electric Innovating Energy Technology 9 10 9 2 6 2 6 1 1 2 5
96. G E Rog IGBT 1 3 1 G E IGBT 1M 2 IGBT 3 IGBT IGBT 4 IGBT IC
97. IGBT IGBT 7 2 fF Fuji Electric Innovating Energy Technology 3 2 C IGBT Vei 20V 7 Vees IGBT G E IGBT
98. Qg IGBT 2 12 IGBT 2 13 C 0 250 500 750 1000 Vee 5V div Collector Emitter voltage Vce 200V div Gate Emitter voltage C Gate charge Qg nC Ca 2 11 VcE VeE Q Q Ff Fuji Electric Innovating Energy Technology 2 Capacitance vs Collector Emitter voltage typ VeE 0V f 1MHz Tj 25 C 100 0 Cies 10 0 NN__ ee Capacitance Cies Coes Cres nF 0 10 20 30 40 Collector Emitter voltage VcE IM 2 12 Vc 2 4 RBSOA IGBT Vcg Ic
99. EMI EMI 4 2 EMI RGc 56Q RG 12Q ee RR RR So A RG 18Q Radiation Noise dBuV 1 30 100 200 Frequency MHz 15kW 2MBI150SC 120 4 13 EMI 4 2 EMI dV dt di dt 2 3
100. gt ns NR DC DC 9 3 G E G E C E rm Root 9 7 99 VGE VCE
101. fF Fuji Electric Innovating Energy Technology 7 3 7 1 4 FWD dv dt FWD dV dt IGBT 7 1 dV dt IGBT1 IGBT2 IGBT1 FWD FWD2 IGBT2 FWD2 IGBT1 dV dt IGBT1 2 Cres Cres Cres x dV dt Rg V
102. Fo Fuji Electric Innovating Energy Technology 10 8 10 IGBT EMC 2 4 150kHz 30MHz 10 13 10 13 150kHz IGBT kHz 20kHz IGBT 10 14 IGBT 50 200ns 2 6MHz
103. G E 7 toff 2 fi HF dV dt ON 9 2 97 9 2 RBSOA 7 7 9 7 7 fy 99 3 1 y y zy HF 4 1
104. p 2 4 Thermistor characteristics 4 NM 2 Fuji Electric Innovating Energy Technology 2 IGBT 6MBI100VB 120 50 1200V 100A 6 IGBT IGBT 2 1 V IGBT 6MBI100VB 120 Vc lc Vc 2 1 2 2 IGBT VcE lc IGBT Vc Tj VGE
105. 80 ce1800 3 a Category C3 Conducted Emission dBuV 10 100 MHz 10 13 20dB dec 40dB dec R f dV dO OY T 100us 10kHz tr 50ns t 6kHz 6MHz 10 14 IGBT Fo Fuji Electric Innovating Energy Technology 10 9 10 IGBT EMC 30MHz 10 15 30MHz IGBT CPU Feild Strength dBuV m 30 40 50 60 70 80 90 100 MHz 10 15 7MBR100U4B120 Fo Fuji Electric
106. DC CT 5 2 AC CT 5 2 2 VcEsag 5 1 5 3 Vcecsat 5 3 Veecat fF Fuji Electric Innovating Energy Technology 5 5 5 IGBT D IGBT D gt T T T Reg
107. Rg l 7 3 to xlkog og fc Q 0OV Veg Q VeE OV Pd palon fee Ls Q o al Pd off Pd on Pd Pd off Pd on kt fF Fuji Electric Innovating Energy Technology lep le IGBT
108. 7 ca 2922 ii fF Fuji Electric Innovating Energy Technology 4 4 4 gt 19 ol dv d hmm gg MI Y 1772 JA 7
109. 4 11 6MBI450U 120 1200V450A Re 1 00 5 6Q IgK KU 200V div 200V div 40A div 80A div DmV i9 jul 2001 0mV 17 Jul 2001 11 27 24 14 34 53 1 Ron 1 0Q 2 Ron 5 6Q Ed 600V IF 50A Tj 125 C tw 1 ps 6MBI450U 120 4 11 fF Fuji Electric Innovating Energy Technology 4 3 5 di dt
110. 10 IGBT 7 29 90 Fall ime 10 a Reverse time Irr Irp E 7 RBSOA 7 IGBT Reverse Bias Safe Operation Area 7 eg IGBT G E 2 3 Thermal resistance characteristics ids IGBT 2 a Rth j c 2 Thermal resistance Rth c f 2
111. C E IGBT IGBT 5 1 Vce Vge Ed Breakdown point Vee N Short circuit withstand capability Pw a
112. RCD P RC IGBT RCD RCD N 2 P _ Llo f _ Cs Ed f 2 2 L lo IGBT Cs Ed f RCD p Llo Llo f 2 L
113. DCB Al2O DCB Sn FF Fuji Electric Innovating Energy Technology 11 10 11 3 3 1 IGBT 1 IGBT 1 IGBT 1 IGBT 1 n
114. Kk k 1 2 3 n PC k a 4272 ED n 4 3 8 x 10 1 2 x 10 7 6 x 10 4 6 x 10 1 1 1 1 3 8x10 1 2x10 7 6x10 4 6x10 2 2 10 1 1 1800sec 30min 2 2x10 x 1800 60 x 60 x 24 x 365 12 55 12 6 fF Fuji Electric Innovating Energy Technology 11 11 2015 3
115. Cge Cge Cge Cge Rg Cies 2 Rg Rg Cc Fuji Electric Innovating Energy Technology 7 IGBT MOS 7 3
116. Gate Emitter voltage 20V max 29 22 24 Collector current 4 2 Collector Power Dissipation 1 IGBT Junction temperature ha kg Operating Junction temperature IGBT X IGBT Case temperature 6 0 FWD FWD I2T 50 60Hz 1 1 FWD
117. IGBT IGBT 10 9 IGBT 1 IGBT MHz 10 10 100kHz 10MHz
118. lo IGBT a Fuji Electric Innovating Energy Technology 5 9 5 5 4 C p LC RCD E N 5 5 C Cs Veg V Re 29 2 H fF 50A 43 75A gt 30 0 47 100A gt 13 600V 150A 15 gt 9 0 2 1 5 200A gt 6 8 0 16 2 2 300A 4 7 0 1 3 3 400A 6 0 08 4 7 50A 22 75A 4 7 0 47 2 100A a gt 2 8 150A gt 2 4 lt 0 2 1 5 200A gt 1 4 0 16 2 2 300A 0 93 0 1 3 3 1 V I
119. Innovating Energy Technology 10 10 10 IGBT EMC IGBT EMI 3 1 3 1 1 L C ip0 eee RN a A IL oo NL IEC61800 3 Conducted Emission dBuV 40 5 IN 0 1 1 10 100 MHz 10 16 3 200V 37kW QP 10 16 IEC61800 3 C2
120. IGBT FWD dvdt di dt LC IGBT EMI 7 Fuji Electric Innovating Energy Technology 4 4 13 EMI 2MBI150SC 120 1200V 150A 5 6 0 2 10dB EMI
121. RBSOA Reverse Bias Safe Operating Area 2 14 Vc RBSOA SCSOA Short Circuit Safe Operation Area Ff Fuji Electric Innovating Energy Technology 2 8 Collector current IC A Coes 2 13 Reverse bias safe operating area max VGE 15V VGE 15V RG 1 60 Tj 150 C 250 200 150 100 50 0 RBSOA Repetitive pulse 0 200 400 600 800 1000 1200 1400 1600 Collector Emitter voltage VcE M 2 14 RBSOA 2 2 5 FWD IGBT IGBT FWD Free Wheeling Diode FWD 2 15 VE 2 16
122. 100mm 50um 10um Fujl Electric Innovating Energy Technology 3 7 3 14 15
123. 7 7 7 50 FF Fuji Electric Innovating Energy Technology 7 10 7 5 1 IGBT HCPL4504 IGBT
124. IGBT 1 1 IGBT 3 1 3 1 IGBT IGBT m awzwv sv ei A gt 1 2 IGBT Vcgsay IGBT IGBTiFWD Tj max
125. 6 1 DC VcE apy E E r FWD lp VE E IGBT W 1 t2x x7 Izx E Ey FWD W a A 72 xI1 xY fxE 0A lp 0A 14 IGBT duty 4 FWD duty 1 4 4 6 1 DC Ed Vcc Ed Vcc Ed Vcc
126. 9 11 _ 7 lt KAMA R N 2 9 11 2 7 9 3 M 7 x Ff Fuji Electric Inno
127. Conditions Vec 1200V lc1 1530A 2 uppe0 le 3000A Vge 15 15V Rg 1 2 11 8ohm T 125deg C 8 9 1000A 1700V 2in1 2MBI1000VXB 170 50 2 Fo Fuji Electric Innovating Energy Technology 8 9 9 1 9 1 2 9 1 IGBT kHz 100kHz i IGBT 2 1 9 1 Fo Fuji Electric Innovating Energy Technology 9 1
128. IGBT A i eo a 4 1 e fF Fuji Electric Innovating Energy Technology D FWD 4 5 PCB PCB PCB PCB 4 E NT a RP
129. 30MHz 10MHz lt 50MHz IGBT IGBT fF Fuji Electric Innovating Energy Technology 10 5 10 IGBT EMC 2 3 10 9
130. 4 12 2 c c 5A div 7C11 7C21 100A div t 0 5us div Ed 600V 1200V 300A IGBT 2 Fuji Electric Innovating Energy Technology 4 3 6 IGBT 260 5 C 10 1sec 1 3 7 IGBT IGBT 10ms
131. IGBT b IGBT VGE RG di dt 7 c IGBT d 2 2 1 1 1 a RC b RCD c RCD
132. IGBT IGBT Tc 6 13 6 13 fF Fuji Electric Innovating Energy Technology 7 1 mhr 7 2 2 7 6 3 TY 4 7 10 5 7 11 IGBT Fo Fuji Electric i Innovating Energy Technology 0 7 7 1 IGBT IGBT Vee Re
133. Innovating Energy Technology 11 9 11 11 9 IGBT ATc A Tc 1 E 08 1 E 07 1 E 06 Life time cycles 1 E 05 1 E 04 10 100 ATc deg C 1 1 2 2 7 83 20 4 5 11 9 ATc
134. UL IGBT UL UL1557 http database ul com cgibinXYV template LISEXT 1FRAME index htm ULFile Number e82988 UL Fuji Electric Innovating Energy Technology 1 6 2 1 PE 2 2 2 IGBT EEERE RER ERRERERRRERELEEEE 2 4 IGBT FF Fuji Electric Innovating Energy Technology 2 1 2 2 1 Maximum Ratings Collector Emitter voltage 23 92 7
135. Vag 15V lc 2 3 2 1 Vc Vc lc VCE VGE Collector current vs Collector Emitter voltage typ Tj 150 C chip 200 a a o Collector current lc A a o Collector Emitter voltage VcgIM lc 150 2 2 VeE sat EE Ff Fuji Electric Innovating Energy Technology Collector current lc Al Collector Emitter voltage Vc M 2 4 Collector current vs Collector Emitter voltage typ Tj 25 C chip Collector Emitter voltage VceM 2 1 Vcecsap lc Tj 25 C Collector Emitter voltage vs Gate Emitter voltage typ Tj 25 C chip 2 lc 200A lc 100A lc 50A 0 5 10 15 20 25 Gate Emitter voltage Vee M 2 3 VcEsap lc Tj 25 C 2 2 2 IGBT a
136. R e i i 9 3 3 9 4 CT 2 T CT 2 Ti CT 2 Tt Ti CTi CT 2 2 6 2 7 9 4 CT FF Fuji Electric Innovating Energy Technology 9 2 4
137. 1 2 FWD IFSM 50 60Hz E 2 Isolation voltage 9 Go 4 x 1g M2 S T 6960 M2 FF Fuji Electric Innovating Energy Technology 9 2 2 2 Electrical characteristics 72 9 G 9 E 72 C Zero gate voltage Collector current C E 9 Gate Emitter leakage current 9 Gate Emitter threshold voltage 23
138. 9 7 109 909 9 7 7 3dB sj 7 xx 05 1 FF Fuji Electric Innovating Energy Technology 9 9 9 2 7 9 8 Tro A Tr 1 Tr 2 Trs 9 8 To T i 0 eo 2 7 7 100 71 71 2 E k 9 3 9 3 1 2 3 K 7 5 4
139. b 5 1 FF Fuji Electric Innovating Energy Technology 5 2 5 1 2 5 1 5 1 4 1 1 K 4 K 4 lt In 4 h FulElecte Fuji Electric Innovating Energy Technology 5 3 5 1 3 1 IGBT
140. 7 Veg 8 V g 6 Fo Fuji Electric Innovating Energy Technology 7 1 2 Veg Va 5V 15V Ve Veg G E 20V 10 IGBT Vse Vse Vse 4 dvdt Vega 5V CO MN re SE 1 3 Re R
141. K 0 O i r c 6 gi 1sV 1 FF Vag 244 2 4 2 2 ton tr tr i to tr tr lr 7 2 5 ton toff 2 5 2 6 7 16 2 8 Tj Rs
142. IGBT fF Fuji Electric Innovating Energy Technology 6 11 6 4 quide holes for hattarm taal 5 Metal mask and Frame Fix tools and put grease with Knife 8 Print with metal squeegee begin 10 After printing 11 Open metal mask 12 Check grease weight 6 11 FF Fuji Electric Innovating Energy Technology 6 12 6 g x 10 um cm x gcm
143. G E 10 KO Reg C G 5 3 IGBT MOS G E 20V 7 9 E G E 7 9 GL_E fF Fuji Electric Innovating Energy Technology 7 11 E 8 IGBT 1 8 2 2 8 6 3 0 8 7 4 0 8 8 IGBT IGBT
144. Re Ls 8 Ro TT Re Ls 2 10 Ra R IGBT 2 3 Re 2 3 2 11 Q Qg Vcg Vce Dynamic gate charge p Vec 600V lc 100A Tj 25 C Qg IGBT G E Qg VeE Qg C E IGBT IGBT Vcg
145. ZD IGBT 10V R IGBT D ZD FF Fuji Electric Innovating Energy Technology 9 3 9 3 IGBT di dt Ls
146. tr ln 2 9 10 E IGBT FWD FWD Re Forward current vs forward on voltage typ chip Forward current IF Al 0 1 2 3 Forward on voltage V IM 2 15 Vr 2 6 _ 2 17 IGBT FWD 1 AT C Rth C W x W IGBT IGBT FWD Tj 6 Ff Fuji Electric Innovating Energy Technology Rth j c C W Thermal resistanse Irr A trr nsec Reverse recovery current Reverse recovery time 1000 Reverse recovery characteri
147. 7 7o a Lk k 1 foE 7 Y27 sin 7 1 6g 7 nl 1 ET 2 i 5 7 E n Iv lc IM Eon Fo Fuji Electric Innovating Energy Technology 6 6 1 1 1 1 1 1 1 1 1 1 1 1 T 1 1 1 1 1 1 1 1 1 1 1 1 1 A 7 6 5 2 6 P s 1 Py 707 E m lw lc IM E r 1 Py Eg 7 Er IM Ilc IM Er 4 2 3 IGBT P P PP sat on FWD FWD P P 1 2 IGBT
148. Innovating Energy Technology 10 11 10 IGBT EMC H LCR 10 17 10MHz IGBT 10 11 16MHz 10MHz LC a 100pF 100nH IGBT 10 18 DBC DBC LISN DBC 10 18 IGBT
149. fF Fuji Electric Innovating Energy Technology 10 16 10 IGBT EMC _ 2 E IGBT 10 14 Z 1 2 S 3 3a 3b 1 10m 3m 2 3 3 1 4 1 S LC 10 12 2in1
150. Innovating Energy Technology 4 1 4 4 1 7 7 3 Fi Fuji Electric Innovating Energy Technology SCSOA SCSOA 72 tg 54 2 92 SCSOA 92 mem eee RBSOA C E h C E C E FWD
151. R 1 1 2 Y 8 IGBT 9 6 6 7 A IGBT
152. SE 4 IGBT 16GBT RBS0A A B C FWD D 4 1 a IGBT A D A RBS0A CB PCB PB bo Er 8 FWD 4 1 b A RBSOA B 4 1 c B fF Fuji Electric Innovating Energy Technology 4 3 4
153. IGBT 100mm 50 um 10 m Rth c f IGBT IGBT 3 3 IGBT
154. 1 1 IGBT 1in1 2in1 6in1 PIM 7in1 4 FF Fuji Electric Innovating Energy Technology 1 5 1 IGBT IGBT IGBT IGBT
155. IGBT Fo Fuji Electric Innovating Energy Technology 8 6 8 IGBT IGBT GDU IGBT IGBT GDU IGBT 1 IGBT 8 7
156. 92 VGE 2 CE Collector Emitter saturation voltage VGE 15V C E G E C E Input capacitance G E G E G E C E Output capacitance C E fe lt 7 1 Forward on voltage VCE sat IGBT VGE OV VCE 109 Turn on time IGBT L 29 10 VCE 10 Raise time IGBT 22 10 90 IGBT 7 VGE 90 L22
157. FWD IGBT 4 10 4 10 IGBT Vge Tw FWD FWD FWD di dt dvdt
158. 5 3 2 a C b RCD 5 4 5 5 C 5 7 FF Fuji Electric Innovating Energy Technology 5 8 5 5 3 RC IGBT IGBT
159. ATj 11 6 Ti Tf ATj 11 2 ATj ATj 0 5Hz ATj 1 1
160. IGBT LC fF Fuji Electric Innovating Energy Technology 10 7 10 IGBT EMC 10 2 10 12 10 2 1 4MHz 5 8MHz DBC 10 lt 20MHz DBC 30 40MHz 10 12 2 L C
161. iia a LJ 5 Vag Veg 15V VeE Ve G E 4 9 Fuji Electric Innovating Energy Technology 4 Cies 2 Ce Rg Cc
162. VcE ay IGBT VcE ay VCE sat IGBT Fo Fuji Electric Innovating Energy Technology 8 2 8 IGBT 1 2 8 2 2 8 2 8 2 IGBT
163. FWD 2MBI450VN 120 50 Fo Fuji Electric Innovating Energy Technology 5 14 5 2 5 1 5 11 Zenner Di Di FWD 5 11
164. IGBT 5 4 TeK Run 25 0MS s Sample Trign 0V 0A Ch1 200V 500mV M2 00us Ch3 4 0V 24jul 2003 Ch3 10 0V 2MBI300UB 120 Ed 600V Veg 15V 5V Re 3 3 Tj 125 C Vcg 200V div lc 250A VeEg 10V div t 2g s div 5 4 2 1 1 IGBT IGBT FWD di dt L didt IGBT IGBT FWD 5 5 5 6 IGBT FF Fuji Electric Innovating Energy Technology 5 6
165. Innovating Energy Technology 4 6 IGBT CT G E C E G E CT 4 CE G E E 4422 GE 2 1 G E 4 2 C E G E G E 20V 20V 100nA MQ gt
166. 1 IGBT 1 1 IGBT 1 1 IGBT IGBT IGBT FWD 1 IGBT FWD 2 3 PWM IGBT FWD 6 1 PWM EconoPACK TM 7n1 IGBT FWD 7 PIM 7Im1
167. 11 4 Tj Tc Tf ATj DCB ATj Tj Tce Tf Y 11 2 ATj Fo Fuji Electric Innovating Energy Technology 11 6 11 Top side view 1 I I Heat sink I I 4 Cross sectional view 11 3 ATj 11 4 Tc Tf 11 5 IGBT AT U
168. Fo Fuji Electric Innovating Energy Technology 6 4 6 IGBT 7 7 9 0 Ve Vo R I a Vo L 1 0 IP 2 V RI NG FWD 9 Vo I DT DF IGBT FWD IGBT FWD vV 6 4 6 3 10 IGBT DT M 1 0 5 0 0 5 1 cos 6 4 PWM Fo Fuji Electric Innovating Energy Technology 6 5 6 3 Ic 6 5 7 7 7 7 E E 7 ab c Eon Eo Er lc E n E w E P P PVE kk 4
169. IGBT Tj Tj max max Fujl Electric Innovating Energy Technology 6 1 6 IGBT 1 1 IGBT IGBT FWD IGBT
170. Fo Fuji Electric Innovating Energy Technology 3 4 IGBT Vcg ay 8 IGBT 1
171. EMC 2 10 3 IEC61800 3 Radiated Emissions 30M 1GHz 3m 60 1 Category C1 Category C2 dBuV m lt 3 etegory C3 10 10 100 1000 MHz 10 3 IEC61800 3 10 4 C3 C1 A B C Restricted Unrestricted Distnbution Distribution EMC 1 First Environmernt Second Environment First Env 10 4 IEC61800 3 Fo Fuji Electric Innovating Energy Technology 10 3 10 IGBT EMC EMI 2 1
172. 5 Ea V2 C Von FWD2 E s Lo 5 5 GE1 7 1 IGBT 1 2 IGBT 5 6 IGBT FF Fuji Electric Innovating Energy Technology 5 7 5 Vig Ed L dlc dt mm dlc dt VcEsp IGBT C E Vcs 2 a IGBT
173. V 11 5 Tjmin 25 C 25 C AT 50 FT 1 25C 75 C Timax 150 150C AT 50C dTj C 100 150 C 11 5 A F 0 1 Fo Fuji Electric Innovating Energy Technology 11 7 Life tirme cY 11 ATj ATj
174. lt gt Ed VcEp IGBT CE Fo Fuji Electric Innovating Energy Technology 5 12 5 3 Rs IGBT IGBT 90 1 R 25 f IGBT P Rs PO 4
175. 10 27 Re dV dt 30MHz E 1 R dV dt 30MHz E 2 E 1 E 2 2 E dV dt 10 28 2 dV dt Fo Fuji Electric Innovating Energy Technology 10 18 10 IGBT EMC 60 50 gt 2xRg SDec 40 Oo 30 LL 20 10 30 40 50 60 70 80 90 100 Frequency MHz 1
176. 9 9 1 No i 3 hg
177. E n 125 C 1000 E 5 Eoff 150 C 5 Boff 125 O 8 Hr 150 0 9 rr 125 C E100 9 IA 5 8 Gadi re a Te 1 rT 10 1 1 1 Lil 0 1 1 0 10 0 100 0 0 50 100 150 200 250 Gate resistance Rg Q Collector current lc 2 8 RS Tj 125 C 2 9 lc Fo Fuji Electric Innovating Energy Technology 2 6 2 Eon Eof E IGBT Switching loss vs gate resistance typ Vec 600V lc 100A VGE 15V 2 9 10 Tj lc Re 9 Re E 2 ME Re Bmdsv pO Ls x dlc dt 8 Eoff 125 0
178. 6 4 6 1 4 6 2 Pt 1 2 4 6 3 3 Ve IGBT Veg IGBT IGBT Ni
179. C VCE sat PGB PGB 7 aa wme CB 1 9 ZTT i di dt PCB 727 a A gr 9 mW 7 a 7 ek 7 Ei 7 A ALAN PC KO RY
180. i co Vcg 4 8 Veg IGBT VcE n IGBT Vaa IGBT VeEm Veg Vc Re VCE lco 0 rnariannsaanaasnsssrssarsessss ness VGE VGE Rg Xice 4 7 dV dt 4 8 Vce ics Veg 4 9 U V W IGBT
181. 0 28 7MBR100U4B 120 3 1 5 IGBT EMI 10MHz IGBT L C L C FF Fuji Electric Innovating Energy Technology 10 19 11 1 0 11 2 2 11 4 3 11 6
182. 4 8 IGBT IGBT 4 1 4 2 4 1 2 3 Fuji Electric
183. 4 8 5 1 MRBSHBSBRHSRSSIREBSISRSE2RSSRESRSSSSSRSSHIBe22R2 5 2 2 kk 5 6 6 00 6 2 2 MMM 6 7 3 IGBT ki 6 11 7 1 kk an 2 iilA1111A4 1 111 1 11111 7 6 3 7 8 RA 5 8 IGBT 1 ki 8 2 2 44 0 AO 8 6 9 E 5 8 7 4 kk 8 8 9 1 9 1 ki 9 1 10 IGBT EMC 1 EMCE RRO 10 1 2 EMI ki 10 4 3 IGBT EMI lk 10 11 11 0 MEIR 11 2 kn k 444
184. 44 1 k 11 4 1 1 0 1 2 2 1 4 3 IGBT 1 5 4 1 6 5 RoHS 1 6 6 UL 1 6 IGBT JEDEC IGBT MOSFET fF Fuji Electric Innovating Energy Technology 1 1 1 n n IGBT MOSFET p
185. GBT fF Fuji Electric Innovating Energy Technology 5 2MBI300VN 120 50 VGE 15V 15V Vcc 600V Ilc 300A Rg 0 93O Ls 80nH Vge 20V div Vce 200V div lc 100A div Time 200nsec div Vce Ic 0 1 i 5 7 2MBI300VN 120 50 1200V 300A 2 3 RCD IGBT RCD 1 5 8 RCD pulse 0 5 9 4 4 Va E Vegsp Vcrp Vegs 5 8 fF Fuji Electric Innovating Energy Technology 5 11 5 RCD IGBT C E
186. MR 11 1 1 IGBT IGBT FWD DCB IGBT FWD IGBT
187. ating Energy Technology 8 3 8 IGBT IGBT IGBT S IGBT IGBT 1 4 VCE sat IGBT IGBT VcEsay 8 4 VcE a y V IGBT 2 8 4 Vcgsay
188. ectric Innovating Energy Technology 9 12 9 C CH1 Ya CH2 Vck 9 10 2 6 2 2 3 1 IGBT 2
189. fF Innovating Energy Technology IGBT 2015 3 RH984c URL http www fujielectric co jp products Semiconductor 1 1 kkk 1 2 20 1 91 1 4 3 1GBT kk 1 5 4 kk 1 6 SR OS CC EE 1 6 6 UL kik 1 6 2 1 2 2 2 IGBT kk 2 4 3 1 1GBT kk 3 2 2 ki 3 3 Edc3V2 7 3 4 4 3 4 5 kk 3 4 PR 3 5 7 ki 3 5 8 9 10 kk 3 7 4 1 0 KK KK KK 4 1 2 4 7 3 kk
190. ge Vge IGBT2 FWD1 da i ETC Cres x dV dt 7 2 IGBT Cge Vge Rg NO 7 1 dVdt Vc High Ra a Cge MI c Rg FWD2 Fuji Electric Innovating Energy Technology 7 Cge Cge Cge
191. gy 6 8 6 A B A 14mm C A 24mm A B C 6 7 IGBT 2 1 IGBT FWD IGBT Rg o d Ag Me thc WW Raoa 1 Wr Tm Rmogr IGBT Wp oRacpp FWD 6 8 fF Fuji Electric Innovating Energy Technology 6 9 6 2 2 T 6 10 6 9
192. hnology 7 H ON OFF ON L OFF ON OFF 1 1 1 1 7 5 UL 7 6 Fuji Electric Innovating Energy Technology IGBT 7 7 PWM
193. o DC A6302 A6303 AC P6021 P6022 500V DC 50MHz 20A 50A 700V DC 15MHz 100A 500A 600V 120Hz 60MHz 15Ap p 250A 600V 935Hz 120MHz 6Ap p 100A ACCT 35MHz CWT PEM 300mA 300kA 0 1Hz 16MHz fF Fuji Electric Innovating Energy Technology 9 6 9 2 9 3 9 3 R
194. stics typ Vcc 600V VGE 15V Rg 1 60 10 0 50 100 150 200 250 Forward current IE Al 2 16 1 Transientthermal resistance max 10 00 00 ES CE OR SCC SE SE EE EI IGBTHInverter 0 10 0 01 Pe gt 0 001 0 010 0 100 1 000 Pulse width Pw sec 2 17 3 IGBT 0O 0 NN OO 6 mM a a EE 3 2 a Rs Rs 3 3 3 4 NE EE 3 4 RR 3 4 nn es 3 5 3 5 a 3 6 RE EE 3 6 RN CN aE INR RRR 3 7 IGBT Fo Fuji Electric Innovating Energy Technology 3 1 IGBT IGBT
195. tage to C E VGE OV Test duration 1000hr 2 High temperature Test Method 101 Bias for gate Test temp Tj 150 C 0 C 5 C Bias Voltage VC VGE 20V or 20V Bias Method Applied DC voltage to G E VCE OV Test duration 1000hr Temperature Test Method 102 Endurance Tests Humidity Bias Test temp 85 2 C Condition code C Relative humidity 85 5 Bias Voltage VC 0 8xVCES Bias Method voltage to C E VGE OV 1000hr Intermitted 5 2 sec Test Method 106 Operating Life i 18 sec Power cycle 100 5 deg forIGBT Tj 150 Ta 25 5 C Number of cycles 15000 cycles fF Fuji Electric Innovating Energy Technology 11 5 11 IGBT IGBT
196. tion number 1 High Temperature Storage i 125 5 C 1lHigh Temperature Storagetemp 125k5C TestMethod201 5 0 1 2 Low Temperature Storage temp 40 5 C Test Method 202 a Test duration 1000hr ee 3ITemperature Storage temp 85 2 C Test Method 103 Humidity Relative humidity 85 5 Test code C Storage Test duration 1000hr 4IUnsaturated Test temp 120 2 C Test Method 103 Pressurized VaporlTest humidity 85 5 SSE CO E Test duration 96hr 5lTemperature Test Method 105 Low temp 40 5 C High temp 125 5 RT 5 35 C Dwell time High RT Low RT 1hr 0 5hr 1hr 0 5hr Number of cycles 100 cycles Thermal Shock 6 Test Method 307 5 oo method I High temp 100 Condition code A 0 Low temp 0 c 8 cS E cS O E gt cS nl Used liquid Water with ice and boiling water Dipping time 5 min par each temp Transfer time 10 sec Number of cycles 10 cycles Fo Fuji Electric Innovating Energy Technology 11 4 11 11 2 V Reference norms Numberof Accept Test items Test methods and conditions EIAJ ED 4701 Sa ance Aug 2001 edition P number High temperature Test Method 101 Reverse Bias Test temp Tj 150 C 07Cr5 C Bias Voltage VC 0 8xVCES Bias Method Applied DC vol
197. vating Energy Technology 9 14 10 IGBT EMC 1 EMC Oe 10 1 2 EMI oo 10 4 3 IGBT EMI Oe 10 11 IGBT EMC EMC IGBT UPS CE VCCI EMC EMC Electro Magnetic Compatibility EMI Electro Magnetic Interference EMS Electro Magnetic Susceptibility EMI EMI EMS
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