JERG-2-024 宇宙転用可能部品の宇宙適用
Contents
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8. 5 3 2 1 3 5 3 2 1 3 RNC CNES Q ST 60 100 1 48 JERG 2 024 EEE INST 002 I I I Leve11 2 3 Commercial
9. 36 JERG 2 024 4 5 2 2 1 1 mA Jm 10 3 m 10deg 10 CO PEM n 859 RH 96 1000 85 85 JESD22 A110 HAST JESD22 A101 for THB 1000
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12. EM EM FM A d 4 2 5 2 30 125C X 1000
13. 4 2 6 4 2 6 ES id 11
14. 1 2 5 3 6 DPA DPA DPA DPA DPA 5 3 6 1 DPA RNC CNES Q ST 60 100
15. JMR 012 4 1 4 2 4 1 TITAR
16. JAXA Qs 4 1 2 JAXA QML i JAXA
17. DPA WCA DPA 28 RoHS REACH RoHS REACH Be0 Cd Li Mg Hg Zn 0 10 A8 OD 2KDESRJE CD DD DN IN N ix co
18. ASIC 22 1 2 ASIC IC JERG 2 024 EEE AXA MIL NASA ESCC NSPAR
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24. A pisse Lo A C 17 JERG 2 024 4 2 3 QC iu E E 10
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27. ZO uu DIES CO Os HH g0 JMR 012 0 3 1 EEE 19 JMR 012 5 1 2 3 I 1 EI agr 7K n ZK nA xa RFI EMI Q UE GEM HOS ii Uam 2r UN Ue 10 SPESE 11 12 13 14 l5 eee A 16 17 COD 18 I9 RR COREANO IPSIS UO NET NES Dp ues
28. 33 JERG 2 024 4 JAXA DYRT AhAERRA SDR 2 PAPDB 3 CDRO JAXA JAXA NSPAR 4
29. RoHS RoHS lt http www semicon toshiba cojp docs datasheet ja Transistor 2SC5065 ja datasheet 071101 pdf X 4 2 2 2 14 JERG 2 024 4 2 1 CB T NDA
30. RF 49 JERG 2 024 X 5 8 2 1 I p xk TUS 1 100 MIL STD 883 2012 RM E 11
31. a 7 DPA Be0 DPA 5 3 8 64 JERG 2 024 5 3 6 1 DPA MIL STD 750 Method 2071 A a ae MIL STD 750 Method 2052 oga MIL STD 750 Method 1071 NII NA MIL STD 750 Method 2074 2072 2069 PEM MIL STD 883 Method 2010
32. ui ME 4 NSPAR a b c d 5 1 6 90nm 7 8 JERG 0 050
33. 4 NSPAR 4 1 2 b in NSPAR b NSPAR NSPAR NSPAR NSPAR C 1 TI BEGERVBUR
34. ASIC ASIC JAXA MIL QML 4 5 2 2 5 3 2 5 3 3 JAXA
35. c SEB SEGR MOSFBT X SEE d SET SEFI 3 4 4 7 TAEPA a pee RT OS JER6 2 212 EEE INST 002 ECSS Q ST 30 11
36. 9 10 JERG 0 034 NASA RP 1124 a TML 1 0 b CVCM 0 1 11 12 FPGA PLD PROM OTP
37. Btic E 5 69
38. 42 44 3 444 2 42 45 4 52 4 5 2 1 4 5 22 5 2 zH Fit RVTCA Lm Q Ly 6 NSPAR NSPAR 6 Yes 4 5 3 NSPAR Yes NSPAR NG Bm No OK 53 5 3 1
39. RNC CNES Q ST 60 100 60 DPA TT 25C 25C 25C HAST 96h or THB 1000h 25C 25C 55 125 C 100 125C 1000 25C 5 3 3 2 7 7 AIL TR 61 JERG 2 024 5 8 8 8 2 FAM v7 MER 3 DPA dc HAST or 1000h THB 85 85 1 10 0 15 0 5 3 6 1 130C 85 RH 96 1000 THB85 85 JESD22 A110 JESD22 A101 for THB
40. 4 2 EE 5 3 1 D 2 3 4 5 6 7 5 3 2 JERG 2 024
41. X PIND PID 10 55C 125 C PIND 2 025 C ud red mE 240h 125 10 55 C 125C 25C PDA 5 peque engl IB 954 Avast 2 PDA 59 1000h RVT
42. 4 1 2 1 4 5 1 4 4 4 4 4 5 4 4 6 4 2 4 2 TENE 4 3 sd E 4 2
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44. 1 2 47 5 3 5 2 1 Js 2 3 4 5
45. jo 1 2 2 beds 68 JERG 2 024 JAXA PAPDB NSPAR
46. a EM 15 JERG 2 024 R 4 422 55 125 65 150 OREHE TL EM
47. JAXA PQR PSR JMR 012 5 3 1 JAXA a QMS b c d
48. 11 12 CA DPA FF 6 BM FM 7 1 3x DES q
49. MIL STD 883 2020 A MIL STD 750 2052 A MIL STD 883 1014 4 B C MIL STD 750 1071 HI H2 C K 1 RNC CNES Q ST 60 100 54 JERG 2 024 5 3 3 5 3 2 5 3 3 1 3 5 3 3 1 3 RNC CNES Q ST 60 100 7 77A I IRA
50. ed 13 CU SES Su 350 EEUU UN Li MIL STD 883 Method2010 PD Al JERG 2 024 R 4 2 4 1 a 4 2 5 ONo1 2 3 O NDA NDA 3 K 4 2 5
51. 12 H 13 EEE HH E 14 NDA JERG 2 024 EH D nil H JMR 012 2 EON L AP Approved Parts List ASIC Application Specific Integrated Circuit BiCMOS Bipolar Complementary Metal Oxide Semiconductor BPF Band Pass Filter C SAM Constant depth mode Scaning Acoustic Microscope CA Construction Analysis CDR Critical Design Review CMOS Complementary Metal Oxide Semiconductor CNES Centre National d tudes Spatiales French National Space Agency COTS Commercial Off The She
52. 45 JERG 2 024 ASIC JAXA 4 4 4 1 4 6 1 NPSL MIL QPL QML 4 1 4 4 2 4 6 2 JAXA MIL NASA JAXA MIL NASA ESCC JAXA ESCC JAXA ASIC ESCC QPL PAPDB QMS ASIC
53. EEE INST 002 E IE II Level 1 2 3 Commercial https nepp nasa gov DocUploads FFB52B88 36AE 4378 A05B2C084B5EE2CC EEE IN 51 002 addl pdf 5 3 2 55 5 3 3 1 1 3 7 JERG 2 024 1 3 5 3 6 1 pr DPA 2 V e S HAST or 1000h THB 85 85 3 1 10 0 15 0 PAAT A AEN INCE 85 RH 96 1000 THB85 85 JESD22 A110 JESD22 A101 for THB amp 25C CD TZ quU JESD 22 A119 SMD JESD 22 B106 Ta 125C 2000 M
54. ks EN puer lt 1I I Le es RNC CNES Q ST 60 100 4 3 1 1 o RE EEE INST 1 002691 E ne T Commercial Me Se Papier iin ii https nepp nasa gov DocUploads FFB52B88 36AE 4378 A05B2C084B5EE2CC EEE INST 0 02 addl pdf RNC CNES Q ST 60 100 4 5 2 2 4 5 2 2 1 3 4 5 2 2 1 3 5 3 2 5 3 2 1 3 5 3 3
55. COTS COMMERCIAL COMPONENT CNES 2010 1 RNC CNES Q ST 60 100 ECSS Q ST 60 13 2013 10 JAXA 2010
56. amp THB 25C 85 85 GOTT ET qu ENSE Ur JESD 22 A113 SMD JESD 22 B106 1 10 Ta 125C 2000 Ta 125 MIL STD 883 1005 D 1000 amp 3 DPA 3 5 3 6 1 DPA indc e s 37 JERG 2 024 K 4 5 2 2 127 2 UB 10 7 quU T yq 55 125C 500
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58. Ei yc A AI T MIL Spec 10 11 12 CA DPA 13 EM FM
59. 4 4 3 4 4 4 S No 42 368 GO ODE HHA BUNT 4 1 4 4 2 4 6 2 4 2 3 j 4 4 4 4 4 5 4 4 6 4 2 4 4 2 4 3 5 1 4 2 4 4 3 4 4 4 4 2 4 5 4 4 4
60. QMS PAPDB Yes 1 42 45 1 444 44 5 4 4 6 INo Yes 42 442 4 3 5 1 zd
61. PPBI PPBI JAXA PPBI 66 JERG 2 024 5 4 4 5 5 3 PDA JAXA
62. https nepp nasa gov DocUp1oads FFB52B88 36AE 4378 A05B2C084B5EB2CC EEB IN ST 002_add1 pdf
63. 5 3 3 3 63 JERG 2 024 5 3 4 4 4 6 3 FSCC25100 ESCC22900 MIL STD 750 1080 MIL STD 883 1019 JEDEC JESD57 5 3 2 5 3 5 1 2 3 4 5
64. MIL STD 750 Method 2017 js MEN LX 1 MIL vore cU RoHS RNC CNES Q ST 60 100 35 JERG 2 024 4 5 2 2 1 2 4 1 HOF
65. OESIE EM FM 6 EM FM 8 MIL Spec IPC 9 22 JERG 2 024 4 2 6 G US Zap Or I m lt Bb cen
66. iL FRE MIL STD 750 Method 2037 1 1 1 MIL STD 883 Method 2011 2 JEDEC 22 B116 X X X MIL STD 750 Method 2017 Le 1 ML RNC CNES Q ST 60 100 65 JERG 2 024 5 3 7 1 2 3
67. SEE SEU SEL SEB SEGR SEDR SET SEFI 32 JERG 2 024 a SEL 75 Mev cm2 mg LET LET dou ee b SEU LET 25 Mev cm2 mg LET SEU SEU CREME MC solar quiet condition worst week model
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70. 1 EEE EEE 2 3 PEM PED JEDEC ED JESD22 A112 JESD22 A113 JESD26 A 4 5 6 JERG 0 039 JERG 0 040 ds UC JERG 0 041 JERG 0 042 JERG 0 043 3 HSD 3
71. 13 JEDEC JESD57 Test Procedures for the Measurement of Single Event Effects in semiconductor Devices from Heavy lon Irradiation 14 JERG 0 034 15 JERG 0 036 16 JERG 0 039 17 JERG 0 040 18 JERG 0 041 19 JERG 0 042 20 JERG 0 043 21 JERG 0 050 22 JERG 0 052 23 JERG 1 010 24 JERG 2 023 8 DE F F E A H Rs anb CD LEE SE 2 JERG 2 024 B JERG 29212 3 UT SD queer up E 26 JESD22 A101 Steady state temperature humidity bias life test 27 JESD22 A110 Highly accelerated temperature and humidity stress test 28 JESD22 A112 MOISTURE INDUCED STRESS SENSITIVITY FOR PLASTIC SURFACE MOUNT
72. amp 3 DPA 3 K 5 3 6 1 DPA 40 JERG 2 024 EM IR ARV REKI Cu e PEM ARV REKI EE Ta 125 NA x EROR d PE JERG 2 024 4 5 2 2 2 I ya 10 we 9 q4 2V7 d 55 125 C 500 CE 11 2 MIL STD 883 1010 B MIL STD 750 1051 B 100
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75. NSPAR 4 5 1 2 NSPAR PAPDB 3 NSPAR a NSPAR ER NM NO0 b
76. 542 M O80 amp 8 i23 3 67 7 JERG 2 024 Lo WW IU 7 2
77. TILE 94 JERG 2 024 4 5 2 1 1 CA WR No 1 No 2 No 3 Noe 4 No 5 d er ND MIL PEM LILIE MIL STD 883 Method 2009 QW MIL STD 883 Method 2012 X X X X X ESCC24800 o 6 PIND MIL STD 750 Method 2052 i I T tenes ano a MIL STD 750 Method 1071 1 RU PIST 1 X EDX X HIJ cud Za mAAR DSC IEC 60068 2 69 AFNOR A 89 400 A CERAI MIL STD 750 Method 2074 2072 2069 MIL STD 883 Method 2010 voc uu eL 1 2 2 MIL STD 750 Method 2037 1 MIL STD 883 Method 2011 2 mE
78. c qe 50 JERG 2 024 zc b5 9 2 1 5 7 PDA 5 MIL STD 883 1014 A B C MIL STD 750 1071 HI H2 C K MIL STD 883 2009 MIL PEM MILSTD 750 2071 GS woes CIE EO Jos XX BIO RNC CNES Q ST 60 100 51 5 8 2 2 26 M 8 ER SS 8 100 N A m 1009 55 125
79. h T05 i 100 k Q RNC90 NPSL Application Notes For MIL PRF 55182 5 http nepp nasa gov nps1 Resistors 55182 55182aps htm j AARD UE pav succes uem T03 DO4 D05 85 M O0 28 m 3 SD 30 JERG 2 024 8
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82. pU TE 10095 un ui 3 100 55 125C 10 Jj MIL STD 883 1010 B PIND 100 MIL STD 883 2020 A MIL STD 750 2052 A 11006 2 25C 100 MIL STD 883 1015 B Tjmax 10C 125C 240 Tg 10 105C T 445 85C T 885 Tj Tg 105 Ea 0 4eV Es 100 3 E
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86. TID SEE 110C 10 HAST 96h HAST 96h THB 1000h 1 THB 1000h 1 2000h 125 C DPA 2000h 125 C DPA 500 ATA V 1500 ATA Ze 55C 125C 55C 125C TID SEE TID SEE RVT RVT RVT EFR EMAR AIT Z HAST
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91. 125C 0 1000 0 100 25C 8 HE 3 EN T 55 125 C 125C 10008 1 20008 5 H 1007 4 Z 7v 500 4 5 2 2 1 1 39 pd A HAST 1000 THB 85 85 1 R 4 5 2 2 2 AI NM 10 10 4 5 2 1 3 10deg PaT AAE ATOE 85 RH 96 1000 85 85 JESD22 A110 JESD22 A101 for THB amp n 25 TL TA LE CT JESD 22 A113 SMD JESD 22 B106 Ta 125C 2000 MIL STD 883 1005 D 1000
92. 4 5 3 PAPDB 1 JAXA URL https eeepitn1 tksc jaxa jp 2 PAPDB 1 JAXA APL NSPAR JAXA JAXA PAPDB
93. 9 10 MIL HDBK 217F zQ XQ 1 1 z0Q 2 L zQ 5 zQ RNC CNES Q ST 60 100 29 4 4 4 4 4 5 1 2 3 1 Ne 2 3 Ne 4 Ne 5 6 7 JERG 2 024 K 10deg Ov vwes iU 5l
94. HAST 96h HAST 96h THB 1000h 1 THB 1000h 1 HAST 96h THB 2000h 125C DPA 1000h 125C DPA 1100 cc 20000 55C 125C 55 C 125 C RVT RVT 1000h 1 1000h 125C c UP ESO oda eggs or 55C 125C 1 PM 2 RNC CNES Q ST 60 100 4 5 2 2 4 5 2 2 1 3 Ed4 5 2 2 1 3 5 3 2 5 3 2 1 3 5 3 3 5 3 3 1 3 5 3 3 1 3 TI BHO T b 4
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96. D 3 HAL ENIG D 4 Q 5 6 P TH M 4 RIT 3 T Qi Uff HD MREMA e vr z MV uS Te D CTE 9 CABE 25 JERG 2 024 4 2 6 2
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99. DD l JERG 2 024 X 4 4 6 1 gt AM CI SI dos c SD Perte ad CI I F RVT 1 RVT Shieldose2 calculation result Orbit Geostationary orbit GEO Launch date 2013 07 01 Shield geometry Full Sphere Detecter Material Silicon 2 1 E 05 NN 0 years Gy m s I 10 years 1 E 03 20years 1 02 D C gS O 1 E 01 1 E 00 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 Shield thickness mm AI 4 4 6 1Dose Depth Curve 2 SEE
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102. 5 3 9 13 4 4 6 TTD DD a Dose Depth Curve 4 4 6 1 ELDRS BiCMOS TID TID Dose Depth Curve 4 4 6 1 b
103. 10 1 MIL STD 883 4 1010 B PIND 100 4 MIL STD 883 2020 A MIL STD 750 2052 A 100 amp EL 25C 100 MIL STD 883 1015 B 1 125C 160 105 C 300 85 590 100 1 3 PDA 1 N A 4 6 PDA 5 02 JERG 2 024 BEER 4043 Tjmax 10 Tg 10C Tg 105C Ea 0 4eV
104. 2 JAXA MIL NASA ESCC XI 77401 ZFA 3 4 JAXA MIL NASA ESCC QPL QML 5 NSPAR JAXA 6 JAXA
105. 25C TO 3 1 5 3 5 3 4 TID ASTM E 595 ASTM E 595 JERG 0 034 JERG 0 034 1 TID 2 PEM C SAM T RNC CNES Q ST 60 100 41 JERG 2 024 3 YE 25C ALIE m PUE Rer d eS HAST 96h 125 C or THB 0 1000 55 125C 1000h 0 100 8 25C 10 m Tx 7 F Dj 1000 2000 55 125C 100 500 8
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107. 5 6 LAT 7 8 9 10 11 12 12 JERG 2 024 s x c E 2
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109. P CT D PA WCA DPA 25 RoHS REACH RoHS REACH Be0 Cd Li Mg Hg Zn pic di JJ 10 n 28 it B 26 JERG 2 024 43
110. 4 6 ASIC ASIC ASIC 4 1 4 6 1 ASIC ASIC IC 2 44 JERG 2 024 2 4 6 1 4 6 2 4 2 4 5 4 6 1 ASIC ASIC
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113. 3 1 727A 1 4 28 JERG 2 024 4 4 4 4 1 4 4 2 4 4 3 1 2 3 4 1 Ne JAXA MIL NASA ESCC Ge m EUR BE 2
114. 4 b 6 Ne 2 3 4 5 2 1 2 4 5 2 1 1 CA 3 4 4 5 2 2 1 5
115. CNES Q ST 60 100 Relifing 4 3 10 5 3 10 6 3 10 7 10 JMR 012 5 5 8 5 10 5 10 5 3 9 PARAB AZT an FPGA PLD PROM OTP PPBI PPBI PPBI PPBI
116. DEVICES 29 JESD22 A113 Preconditionning of plastic surface mount devices prior to reliability testing 30 JESD22 B106 Resistance to soldering temperature for through hole mounted devices 31 JESD22 B116 WIRE BOND SHEAR TEST 32 JESD26 A GENERAL SPECIFICATION FOR PLASTIC ENCAPSULATED MICROCIRCUITS FOR USE IN RUGGED APPLICATIONS RESCINDED 33 JMR 012 34 MIL HDBK 217 Reliability Prediction of Electronic Equipment 35 MIL PRF 55182 PERFORMANCE SPECIFICATION RESISTORS FIXED FILM NONESTABLISHED RELIABILITY ESTABLISHED RELIABILITY AND SPACE LEVEL GENERAL SPECIFICATION FOR 36 MIL STD 750 TEST METHOD FOR STANDARD SEMICONDUCTOR DEVICES 37 MIL STD 883 TEST METHOD STANDARD MICROCIRCUITS 38 MIL STD 1580 DESTRUCTIVE PHYSICAL ANALYSIS FOR ELECTRONIC ELECTROMAGNETIC AND ELECTROMECHANICAL PARTS 39 NPSL NASA Parts Selection List 40 NASA RP 1124 Outgassing Data for Selecting Spacecraft Materials 41 RNC CNES Q ST 60 100 General Requirements for the use of Commercial EEE Parts in Space Applications 3 I JERG 2 024 JMR 012 2 1
117. SE D Pod 2 TR 42 1 5 0 027 XIDSS SR Ego a i ee 5 es 43 4 6 1 ASIC eee RRRRIRRIRRRRRR ru 46 EIER DE a2 Ea a a o RA ERR 58 ON 0 ATI MI E aA EU m Xd d bc E 61 5 9 2999 ny FREAR 63 JERG 2 024 GEI
118. Te EM FM n 4 2 3 4 2 2 Ne1 2 3 IM X4122088SWERWAT C CEBRLU GERE 4 2 3
119. ean TV 20 C 85C 10deg 10 75 4 5 2 5 3 10deg NPSL NPSL NPSL http nepp nasa gov nps1 Important Application Notes 08 98
120. 50 1051 B amp 25 C 7 2 3 5 3 4 RVT 1 2 1 2 RNC CNES Q ST 60 100 57 DPA 25C V penc a ONT HAST 96h or THB 1000h ida 25C 0 1000 8 125C 1000F fi 7 200087 f 3 JERG 2 024
121. GNU SAW LPF HPF BPP Z4 JERG 2 024 B3 Sh K 5 E 1 2 3 4 5 6 7 8 9 AFNOR A89 400 EN Soldering Measurement of solderability Wetting balance tests method ASTM E 595 STANDARD TEST METHOD FOR TOTAL MASS LOSS AND COLLECTED VOLATILE CONDENSABLE MATERIALS FROM OUTGASSING IN A VACUUM ENVIRONMENT CREME MC Cosmic Ray Effects on Micro Electronics Monte Carlo ECSS Q ST 30 11 Space Product Assurance Derating EEE components ECSS Q ST 60 13 Space product assurance Commercial electrical electronic and electromechanical EEE components EEE INST 002 Instructions for EEE Parts Selection Screening Qualification and Derating ESCC 22900 TOTAL DOSE STEADY STATE IRRADIATION TEST METHOD ESCC 24800 Permanence of marking ESCC 25100 Single Event Effects test method and guidelines 10 IEC 60068 2 69 Part 2 69 Tests Test Te Solderability testing of electronic components for surface mounting devices SMD by the wetting balance method 11 J STD 033 Handling packing shipping and use of moisture reflow sensitive surface mount devices 12 JAXA QPL QML
122. IL STD 883 1005 D 1000 3 BERGE Pen 56 PEM ed Ta 125C 2 2000 1000 lt e 2 SS Bita vy FOREZ ESCC 2000 JERG 2 024 4 5 3 3 1 1 3 7 V Ey o pst mv Were AB UA veces F 55 4125 C 100 1 MIL STD 883 1010 B MIL STD 7
123. JERG 2 024 26 5 15 JAXA JAXA Disclaimer The information contained herein is for general informational purposes only JAXA makes no warranty express or implied including as to the accuracy usefulness or timeliness of any information herein JAXA will not be liable for any losses relating to the use of the information 305 8505 2 1 1 JAXA Japan Aerospace Exploration Agency JERG 2 024 H X tdi D aaa a a i a EE a 1 EL vocem 2 el E 2 MU UNE IT 2 ZEN o nm 3 2 3 ON 5 5 040 XX P EE 6 8 4 1 e yh s 8 12 49 ucc acum alb a a iacta baced fac ced c RR Ca 20 4 4 lt
124. Semiconductor Field Effect Transistor National Aeronautics and Space Administration Non Disclosure Agreement NASA Parts Selection List Non Standard Part approval Request One Time Programmable devices Project Approved Parts Data Base Pressure Cooker Test Percent Defective Allowable Plastic Encapsulated Device Plastic Encapsulated Microcircuit Particle Impact Noise Detection Product Liability Programmable Logic Device Post Programming Burn In Post Qualification test Review Programmable Read Only Memory PreShipment Review Plated Through Hole Qualified Manufacturer Listing Quality Management System Qualified Parts List Registration Evaluation Authorization and Restriction of Chemicals Radio Frequency Radio Frequency Interference Relative Humidity Restriction of the use of certain Hazardous Substances Radiation Verification Testing surface Acoustic Wave system Definition Review Single Event Burnout single Event Dielectric Rapture Single Event Effect SEU SEL SEB SEDR SEFI SEGR SET Single Event Functional Interrupt single Event Gate Rapture Single Event Latch up Scanning Electron Microscope Single Event Transient Single Event Upset surface Mount Device Glass transition Temperature Temperature Humidity Bias Total Ionizing Dose Total Mass Loss JERG 2 024
125. lf CTE Coefficient of Thermal Expansion CVCM Collected Volatile Condensable Materials DD Displacement Damage DPA Destructive Physical Analysis DSC Differential Scanning Calorimetry Ea Activation Energy ECSS European Coordination for Space Standardization EDX Energy Dispersive X ray spectroscopy EEE Electrical Electronic Electromechanical EFR Established Failure Rate ELDRS Enhanced Low Dose Rate Sensitivity EMI ElectroMagnetic Interference ENIG Electroless Nickel Immersion Gold EPPL European Preferred Parts List ESCC European Space Components Coordination FPGA Field Programmable Gate Array HAL Hot Air Leveling HAST Highly Accelerated Stress Test HDI High Density Interconnect HPF High Pass Filter HSD Hot Solder Dip IP Intellectual Property 37 TPC Institute for Printed Circuits ITAR International Traffic in Arms Regulations ISO International Organization for Standardization JAXA Japan Aerospace eXploration Agency JEDEC Joint Electron Device Engineering Council JESD JEDEC Standards JIS Japanese Industrial Standards LAT Lot Acceptance Test LET Linear Energy Transfer LETth ThresHold for Linear Energy Transfer LPF Low Pass Filter MIL MILitary MOSFET NASA NDA NPSL NSPAR OTP PAPDB PCT PDA PED PEM PIND Pb PLD PPBI PQR PROM PSR PTH QML QMS QPL REACH RF RFI RH RoHS RVT SAW SDR SEB SEDR SEE SEFI SEGR SEL SEM SET SEU SMD Tg THB TID TML JERG 2 024 Metal Oxide
126. uests bec quor peses 18 JERG 2 024 4 2 3 Rho EHE EO 18 CMOS Te 550C 125 20 PKG zy
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